JP4629178B2 - 窒化物半導体素子 - Google Patents

窒化物半導体素子 Download PDF

Info

Publication number
JP4629178B2
JP4629178B2 JP2000015971A JP2000015971A JP4629178B2 JP 4629178 B2 JP4629178 B2 JP 4629178B2 JP 2000015971 A JP2000015971 A JP 2000015971A JP 2000015971 A JP2000015971 A JP 2000015971A JP 4629178 B2 JP4629178 B2 JP 4629178B2
Authority
JP
Japan
Prior art keywords
layer
nitride semiconductor
multilayer film
semiconductor layer
gan
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP2000015971A
Other languages
English (en)
Japanese (ja)
Other versions
JP2000244013A (ja
JP2000244013A5 (enrdf_load_stackoverflow
Inventor
公二 谷沢
友次 三谷
宏充 丸居
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nichia Corp
Original Assignee
Nichia Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nichia Corp filed Critical Nichia Corp
Priority to JP2000015971A priority Critical patent/JP4629178B2/ja
Publication of JP2000244013A publication Critical patent/JP2000244013A/ja
Publication of JP2000244013A5 publication Critical patent/JP2000244013A5/ja
Application granted granted Critical
Publication of JP4629178B2 publication Critical patent/JP4629178B2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Images

Landscapes

  • Led Devices (AREA)
  • Semiconductor Lasers (AREA)
JP2000015971A 1998-10-06 2000-01-25 窒化物半導体素子 Expired - Lifetime JP4629178B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2000015971A JP4629178B2 (ja) 1998-10-06 2000-01-25 窒化物半導体素子

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JP28434598 1998-10-06
JP10-284345 1998-12-25
JP10-368294 1998-12-25
JP36829498 1998-12-25
JP2000015971A JP4629178B2 (ja) 1998-10-06 2000-01-25 窒化物半導体素子

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP11290899A Division JP3063756B1 (ja) 1998-10-06 1999-04-20 窒化物半導体素子

Publications (3)

Publication Number Publication Date
JP2000244013A JP2000244013A (ja) 2000-09-08
JP2000244013A5 JP2000244013A5 (enrdf_load_stackoverflow) 2006-06-15
JP4629178B2 true JP4629178B2 (ja) 2011-02-09

Family

ID=26555435

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2000015971A Expired - Lifetime JP4629178B2 (ja) 1998-10-06 2000-01-25 窒化物半導体素子

Country Status (1)

Country Link
JP (1) JP4629178B2 (enrdf_load_stackoverflow)

Cited By (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8395165B2 (en) 2011-07-08 2013-03-12 Bridelux, Inc. Laterally contacted blue LED with superlattice current spreading layer
US8525221B2 (en) 2009-11-25 2013-09-03 Toshiba Techno Center, Inc. LED with improved injection efficiency
US8536601B2 (en) 2009-06-10 2013-09-17 Toshiba Techno Center, Inc. Thin-film LED with P and N contacts electrically isolated from the substrate
US8552465B2 (en) 2011-11-09 2013-10-08 Toshiba Techno Center Inc. Method for reducing stress in epitaxial growth
US8558247B2 (en) 2011-09-06 2013-10-15 Toshiba Techno Center Inc. GaN LEDs with improved area and method for making the same
US8564010B2 (en) 2011-08-04 2013-10-22 Toshiba Techno Center Inc. Distributed current blocking structures for light emitting diodes
US8581267B2 (en) 2011-11-09 2013-11-12 Toshiba Techno Center Inc. Series connected segmented LED
US8624482B2 (en) 2011-09-01 2014-01-07 Toshiba Techno Center Inc. Distributed bragg reflector for reflecting light of multiple wavelengths from an LED
US8664747B2 (en) 2008-04-28 2014-03-04 Toshiba Techno Center Inc. Trenched substrate for crystal growth and wafer bonding
US8686430B2 (en) 2011-09-07 2014-04-01 Toshiba Techno Center Inc. Buffer layer for GaN-on-Si LED
US8865565B2 (en) 2011-08-02 2014-10-21 Kabushiki Kaisha Toshiba LED having a low defect N-type layer that has grown on a silicon substrate
US8916906B2 (en) 2011-07-29 2014-12-23 Kabushiki Kaisha Toshiba Boron-containing buffer layer for growing gallium nitride on silicon
US8994064B2 (en) 2011-09-03 2015-03-31 Kabushiki Kaisha Toshiba Led that has bounding silicon-doped regions on either side of a strain release layer
US9012939B2 (en) 2011-08-02 2015-04-21 Kabushiki Kaisha Toshiba N-type gallium-nitride layer having multiple conductive intervening layers
US9130068B2 (en) 2011-09-29 2015-09-08 Manutius Ip, Inc. Light emitting devices having dislocation density maintaining buffer layers
US9142743B2 (en) 2011-08-02 2015-09-22 Kabushiki Kaisha Toshiba High temperature gold-free wafer bonding for light emitting diodes
US9159869B2 (en) 2011-08-03 2015-10-13 Kabushiki Kaisha Toshiba LED on silicon substrate using zinc-sulfide as buffer layer
US9343641B2 (en) 2011-08-02 2016-05-17 Manutius Ip, Inc. Non-reactive barrier metal for eutectic bonding process
US9490392B2 (en) 2011-09-29 2016-11-08 Toshiba Corporation P-type doping layers for use with light emitting devices
US10174439B2 (en) 2011-07-25 2019-01-08 Samsung Electronics Co., Ltd. Nucleation of aluminum nitride on a silicon substrate using an ammonia preflow

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2002025746A1 (en) 2000-09-21 2002-03-28 Sharp Kabushiki Kaisha Nitride semiconductor light emitting element and optical device containing it
US6958497B2 (en) 2001-05-30 2005-10-25 Cree, Inc. Group III nitride based light emitting diode structures with a quantum well and superlattice, group III nitride based quantum well structures and group III nitride based superlattice structures
JP5162809B2 (ja) * 2004-02-09 2013-03-13 日亜化学工業株式会社 窒化物半導体素子
KR100638818B1 (ko) * 2005-05-19 2006-10-27 삼성전기주식회사 질화물 반도체 발광소자
DE102009060747B4 (de) 2009-12-30 2025-01-09 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Halbleiterchip
JP6026116B2 (ja) * 2012-03-09 2016-11-16 シャープ株式会社 窒化物半導体発光素子およびその製造方法
KR101669638B1 (ko) * 2014-08-19 2016-10-26 서울바이오시스 주식회사 n형 질화물 반도체층의 성장 방법, 발광 다이오드 및 그 제조 방법
US10109767B2 (en) 2014-04-25 2018-10-23 Seoul Viosys Co., Ltd. Method of growing n-type nitride semiconductor, light emitting diode and method of fabricating the same
WO2021106928A1 (ja) * 2019-11-26 2021-06-03 日亜化学工業株式会社 窒化物半導体素子

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2564024B2 (ja) * 1990-07-09 1996-12-18 シャープ株式会社 化合物半導体発光素子
JP2902160B2 (ja) * 1991-05-30 1999-06-07 京セラ株式会社 半導体発光装置の製造方法
JPH0851251A (ja) * 1994-05-31 1996-02-20 Sony Corp 光半導体装置
JPH0818168A (ja) * 1994-04-28 1996-01-19 Sony Corp Ｉｉ−ｖｉ族化合物半導体発光素子
GB2298735A (en) * 1995-03-08 1996-09-11 Sharp Kk Semiconductor device having a miniband
JPH09139543A (ja) * 1995-11-15 1997-05-27 Hitachi Ltd 半導体レーザ素子
JPH09232629A (ja) * 1996-02-26 1997-09-05 Toshiba Corp 半導体素子
JP3688843B2 (ja) * 1996-09-06 2005-08-31 株式会社東芝 窒化物系半導体素子の製造方法
JP3282175B2 (ja) * 1997-02-04 2002-05-13 日亜化学工業株式会社 窒化物半導体素子
JP3433038B2 (ja) * 1997-02-24 2003-08-04 株式会社東芝 半導体発光装置

Cited By (30)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8664747B2 (en) 2008-04-28 2014-03-04 Toshiba Techno Center Inc. Trenched substrate for crystal growth and wafer bonding
US8536601B2 (en) 2009-06-10 2013-09-17 Toshiba Techno Center, Inc. Thin-film LED with P and N contacts electrically isolated from the substrate
US8546832B2 (en) 2009-06-10 2013-10-01 Toshiba Techno Center Inc. Thin-film LED with p and n contacts electrically isolated from the substrate
US9142742B2 (en) 2009-06-10 2015-09-22 Kabushiki Kaisha Toshiba Thin-film LED with P and N contacts electrically isolated from the substrate
US8871539B2 (en) 2009-06-10 2014-10-28 Kabushiki Kaisha Toshiba Thin-film LED with P and N contacts electrically isolated from the substrate
US8684749B2 (en) 2009-11-25 2014-04-01 Toshiba Techno Center Inc. LED with improved injection efficiency
US8525221B2 (en) 2009-11-25 2013-09-03 Toshiba Techno Center, Inc. LED with improved injection efficiency
US9012953B2 (en) 2009-11-25 2015-04-21 Kabushiki Kaisha Toshiba LED with improved injection efficiency
US8395165B2 (en) 2011-07-08 2013-03-12 Bridelux, Inc. Laterally contacted blue LED with superlattice current spreading layer
US10174439B2 (en) 2011-07-25 2019-01-08 Samsung Electronics Co., Ltd. Nucleation of aluminum nitride on a silicon substrate using an ammonia preflow
US8916906B2 (en) 2011-07-29 2014-12-23 Kabushiki Kaisha Toshiba Boron-containing buffer layer for growing gallium nitride on silicon
US8865565B2 (en) 2011-08-02 2014-10-21 Kabushiki Kaisha Toshiba LED having a low defect N-type layer that has grown on a silicon substrate
US9142743B2 (en) 2011-08-02 2015-09-22 Kabushiki Kaisha Toshiba High temperature gold-free wafer bonding for light emitting diodes
US9343641B2 (en) 2011-08-02 2016-05-17 Manutius Ip, Inc. Non-reactive barrier metal for eutectic bonding process
US9012939B2 (en) 2011-08-02 2015-04-21 Kabushiki Kaisha Toshiba N-type gallium-nitride layer having multiple conductive intervening layers
US9159869B2 (en) 2011-08-03 2015-10-13 Kabushiki Kaisha Toshiba LED on silicon substrate using zinc-sulfide as buffer layer
US8564010B2 (en) 2011-08-04 2013-10-22 Toshiba Techno Center Inc. Distributed current blocking structures for light emitting diodes
US9070833B2 (en) 2011-08-04 2015-06-30 Kabushiki Kaisha Toshiba Distributed current blocking structures for light emitting diodes
US8981410B1 (en) 2011-09-01 2015-03-17 Kabushiki Kaisha Toshiba Distributed bragg reflector for reflecting light of multiple wavelengths from an LED
US8624482B2 (en) 2011-09-01 2014-01-07 Toshiba Techno Center Inc. Distributed bragg reflector for reflecting light of multiple wavelengths from an LED
US8994064B2 (en) 2011-09-03 2015-03-31 Kabushiki Kaisha Toshiba Led that has bounding silicon-doped regions on either side of a strain release layer
US9018643B2 (en) 2011-09-06 2015-04-28 Kabushiki Kaisha Toshiba GaN LEDs with improved area and method for making the same
US8558247B2 (en) 2011-09-06 2013-10-15 Toshiba Techno Center Inc. GaN LEDs with improved area and method for making the same
US8686430B2 (en) 2011-09-07 2014-04-01 Toshiba Techno Center Inc. Buffer layer for GaN-on-Si LED
US9490392B2 (en) 2011-09-29 2016-11-08 Toshiba Corporation P-type doping layers for use with light emitting devices
US9130068B2 (en) 2011-09-29 2015-09-08 Manutius Ip, Inc. Light emitting devices having dislocation density maintaining buffer layers
US8581267B2 (en) 2011-11-09 2013-11-12 Toshiba Techno Center Inc. Series connected segmented LED
US9391234B2 (en) 2011-11-09 2016-07-12 Toshiba Corporation Series connected segmented LED
US9123853B2 (en) 2011-11-09 2015-09-01 Manutius Ip, Inc. Series connected segmented LED
US8552465B2 (en) 2011-11-09 2013-10-08 Toshiba Techno Center Inc. Method for reducing stress in epitaxial growth

Also Published As

Publication number Publication date
JP2000244013A (ja) 2000-09-08

Similar Documents

Publication Publication Date Title
JP4629178B2 (ja) 窒化物半導体素子
JP3063756B1 (ja) 窒化物半導体素子
JP3551101B2 (ja) 窒化物半導体素子
JP3656456B2 (ja) 窒化物半導体素子
JP3063757B1 (ja) 窒化物半導体素子
JP3622562B2 (ja) 窒化物半導体発光ダイオード
JP3719047B2 (ja) 窒化物半導体素子
US6906352B2 (en) Group III nitride LED with undoped cladding layer and multiple quantum well
US7402838B2 (en) Nitride semiconductor device
JP3835384B2 (ja) 窒化物半導体素子
JP3744211B2 (ja) 窒化物半導体素子
JP3250438B2 (ja) 窒化物半導体発光素子
JP3868136B2 (ja) 窒化ガリウム系化合物半導体発光素子
JP2890396B2 (ja) 窒化物半導体発光素子
JP3680558B2 (ja) 窒化物半導体素子
JP3890930B2 (ja) 窒化物半導体発光素子
JP5145617B2 (ja) ｎ型窒化物半導体積層体およびそれを用いる半導体素子
JPH08228025A (ja) 窒化物半導体発光素子
CN100449808C (zh) 氮化物半导体元件
JP3651260B2 (ja) 窒化物半導体素子
JP2000286451A (ja) 窒化物半導体素子
JP3620292B2 (ja) 窒化物半導体素子
JP4815732B2 (ja) 窒化物半導体素子
JP2004343147A (ja) 窒化物半導体素子
JP2001298215A (ja) 発光素子

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A821

Effective date: 20050817

RD02 Notification of acceptance of power of attorney

Free format text: JAPANESE INTERMEDIATE CODE: A7422

Effective date: 20050817

RD04 Notification of resignation of power of attorney

Free format text: JAPANESE INTERMEDIATE CODE: A7424

Effective date: 20051014

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20060420

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20060420

RD03 Notification of appointment of power of attorney

Free format text: JAPANESE INTERMEDIATE CODE: A7423

Effective date: 20070314

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20081125

RD03 Notification of appointment of power of attorney

Free format text: JAPANESE INTERMEDIATE CODE: A7423

Effective date: 20090119

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20090122

A02 Decision of refusal

Free format text: JAPANESE INTERMEDIATE CODE: A02

Effective date: 20090616

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20090916

A911 Transfer to examiner for re-examination before appeal (zenchi)

Free format text: JAPANESE INTERMEDIATE CODE: A911

Effective date: 20091109

A912 Re-examination (zenchi) completed and case transferred to appeal board

Free format text: JAPANESE INTERMEDIATE CODE: A912

Effective date: 20100319

A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20101111

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20131119

Year of fee payment: 3

R150 Certificate of patent or registration of utility model

Free format text: JAPANESE INTERMEDIATE CODE: R150

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20131119

Year of fee payment: 3

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

EXPY Cancellation because of completion of term