JP4583618B2 - Plasma processing equipment - Google Patents

Description

[0001]
BACKGROUND OF THE INVENTION
The present invention relates to a plasma processing apparatus used when processing is performed by applying plasma generated by microwaves to a semiconductor wafer or the like.
[0002]
[Prior art]
In recent years, with the increase in the density and miniaturization of semiconductor products, plasma processing apparatuses may be used for processes such as film formation, etching, and ashing in the manufacturing process of semiconductor products, and in particular, 0.1 mTorr ( 13.3 mPa) to several tens of mTorr (several Pa) of a relatively low pressure in a high vacuum state, so that plasma can be stably generated, so that microwaves or magnetic fields from microwaves and ring coils can be used. There is a tendency to use a microwave plasma apparatus that generates a high-density plasma by combining them.
Such a plasma processing apparatus is disclosed in JP-A-3-191073, JP-A-5-343334, JP-A-9-181052 by the present applicant, and the like. Here, a general plasma processing apparatus using a microwave will be schematically described with reference to FIGS. FIG. 6 is a block diagram showing a conventional general plasma processing apparatus, and FIG. 7 is a plan view showing a planar antenna member.
[0003]
In FIG. 6, the plasma processing apparatus 2 includes a mounting table 6 on which a semiconductor wafer W is mounted in a processing container 4 that can be evacuated, and microwaves are applied to a ceiling portion that faces the mounting table 6. A transparent insulating plate 8 made of, for example, disk-shaped aluminum nitride is provided in an airtight manner.
Then, on the upper surface of the insulating plate 8, a disc-shaped planar antenna member 10 having a thickness of about several millimeters as shown in FIG. 7 and, if necessary, the wavelength of the microwave in the radial direction of the planar antenna member 10 are set. For example, a slow wave material 12 made of a dielectric is provided for shortening. The antenna member 10 is made of a conductor plate having a thickness of about 2 to 3 mm, for example, a copper plate. The antenna member 10 has a microwave radiation hole 14 formed of a large number of substantially circular through holes. Yes. The microwave radiation holes 14 are generally arranged concentrically as shown in FIG. 7 or spirally arranged. An internal cable 18 of the coaxial waveguide 16 is connected to the center portion of the planar antenna member 10 to guide, for example, a 2.45 GHz microwave generated from a microwave generator (not shown). Then, while the microwave is propagated radially in the radial direction of the antenna member 10, the microwave is emitted from the microwave radiation holes 14 provided in the antenna member 10, and is transmitted through the insulating plate 8. A microwave is introduced into the chamber, and plasma is generated in the processing chamber 4 by the microwave to perform a predetermined plasma process such as etching or film formation on the semiconductor wafer.
[0004]
[Problems to be solved by the invention]
By the way, although a material having good conductivity, such as copper, is used as a constituent material of the antenna member 10, the antenna member 10 itself generates heat and rises in temperature due to resistance loss during the process. Is inevitable. In this case, when the diameter of the processing container 4 is small, the amount of thermal deformation that occurs as the temperature rises is small, and so much problem does not occur.
However, as the diameter of the semiconductor wafer increases to 8 inches (20 cm) or 12 inches (30 cm), the diameter of the antenna member 10 also increases gradually. As a result, thermal deformation that occurs as the temperature rises. The amount has grown dramatically. As described above, when the deformation amount of the antenna member 10 becomes too large, the distance between the antenna member 10 and the plasma generated in the processing container 4 changes, and the antenna member 10 and the plasma itself are coupled. There is a problem that the state fluctuates, and thus the plasma distribution fluctuates and the in-plane uniformity and reproducibility of the processing deteriorate.
[0005]
The insulating plate 8 that partitions the ceiling portion of the processing container 4 is generally made of aluminum nitride (AlN) having a relatively low dielectric loss. The wave power is wasted here as dielectric loss, which is a cause of reduced energy efficiency. Moreover, even if a material having a low dielectric loss is used as the insulating plate 8, heat generation due to the dielectric loss is unavoidable, and the heat conductivity of the material constituting these insulating plates 8 is not so good. Is accumulated in the insulating plate 8 without being sufficiently dissipated on the side wall of the processing vessel 4, and this excessively increases the temperature of the semiconductor wafer W placed close to the insulating plate 8. There is also the problem of adversely affecting the distribution.
The present invention has been devised to pay attention to the above problems and to effectively solve them. An object of the present invention is to provide a plasma processing apparatus capable of efficiently cooling a planar antenna member without adversely affecting the propagation of microwaves.
Another object of the present invention is to provide a plasma processing apparatus capable of controlling the plasma density and thereby improving the in-plane uniformity of the plasma density in the processing vessel .
[0006]
[Means for Solving the Problems]
According to a first aspect of the present invention, there is provided a processing container in which a ceiling portion is opened so that the inside can be evacuated, an insulating plate that is airtightly attached to the opening of the ceiling portion of the processing container, and a target object Therefore, microwaves for plasma generation are transmitted through the insulating plate from a mounting table provided in the processing container and a plurality of microwave radiation holes formed at a predetermined pitch above the insulating plate. A planar antenna member to be introduced into the processing container, a slow wave material provided above the planar antenna member to shorten the wavelength of the microwave, and a predetermined gas is introduced into the processing container In a plasma processing apparatus having a gas supply means, a dielectric constant adjusting member provided on an upper portion of the slow wave material, and a height for adjusting the height of the dielectric constant adjusting member to approach and separate from the slow wave material. Adjustment mechanism and Is a plasma processing apparatus characterized by comprising.
As described above, since the dielectric constant adjusting member is provided on the upper portion of the slow wave material so that the height can be adjusted, the plasma density is controlled by adjusting the dielectric constant immediately below the dielectric constant adjusting member, and thereby the inside of the processing vessel is adjusted. In-plane uniformity of plasma density can be improved.
In the related art of the present invention, a processing container whose ceiling is opened and the inside of which can be evacuated, an insulating plate that is airtightly attached to the opening of the ceiling of the processing container, and an object to be processed are placed. Therefore, microwaves for plasma generation are transmitted through the insulating plate from a mounting table provided in the processing vessel and a plurality of microwave radiation holes provided at a predetermined pitch above the insulating plate. A planar antenna member to be introduced into the processing container, a slow wave material provided above the planar antenna member for shortening the wavelength of the microwave, and a gas for introducing a predetermined gas into the processing container In the plasma processing apparatus having the supply means, a heat medium passage for flowing a heat medium is formed inside the planar antenna member.
In this way, by flowing the coolant through the heat medium passage formed inside the planar antenna member, the planar antenna member can be cooled to prevent this thermal deformation. In addition, since the planar antenna member can be prevented from being thermally deformed, the coupling state between the antenna member and the plasma in the processing container can be stabilized, and therefore the in-plane uniformity and reproducibility of the plasma processing on the object to be processed can be improved. It becomes possible to make it.
[0007]
In this case, for example, a heat medium temperature control unit for controlling the temperature of the heat medium is connected to the heat medium passage.
Thereby, the temperature of the planar antenna member can be controlled by the heat medium temperature control unit.
Further, the upper and lower surfaces of the planar antenna member Invite example embodiment is formed into a flat surface.
According to this, since the upper and lower surfaces of the planar antenna member through which the microwave propagates have a flat surface with no irregularities, it is possible to propagate the microwave in the designed propagation form.
[0008]
The surface of the planar antenna member Invite example embodiment, the insulating plate is in close contact.
According to this, it is possible to effectively cool the insulating plate in close contact with the planar antenna member and maintain it at a constant temperature, and it is possible to prevent the processing object from being adversely affected thermally. It becomes.
Further, the planar antenna member Invite example embodiment is made of copper or aluminum.
[0009]
DETAILED DESCRIPTION OF THE INVENTION
Hereinafter, an embodiment of a plasma processing apparatus according to the present invention will be described in detail with reference to the accompanying drawings.
FIG. 1 is a configuration diagram showing an example of a plasma processing apparatus according to the present invention, FIG. 2 is a plan view showing a planar antenna member, FIG. 3 is an explanatory diagram for explaining a method for manufacturing the planar antenna member, and FIG. 4 is a dielectric constant. FIG. 5 is an operation explanatory diagram for explaining the operation of the dielectric constant adjusting plate.
[0010]
In this embodiment, a case where the plasma processing apparatus is applied to a plasma CVD (Chemical Vapor Deposition) process will be described. As shown in the figure, this plasma processing apparatus 20 has a processing container 22 whose side wall and bottom are made of a conductor such as aluminum and formed entirely in a cylindrical shape, which is grounded. The inside is configured as a sealed processing space S.
[0011]
In the processing container 22, a mounting table 24 on which, for example, a semiconductor wafer W as a target object is mounted is accommodated on the upper surface. The mounting table 24 is formed in a substantially cylindrical shape which is made convex and flat by, for example, anodized aluminum, and the lower part thereof is supported by a support table 26 which is also formed in a cylindrical shape by aluminum or the like. The support base 26 is installed on the bottom of the processing container 22 via an insulating material 28.
An electrostatic chuck or a clamping mechanism (not shown) for holding the wafer is provided on the upper surface of the mounting table 24 described above. The mounting table 24 is connected to the matching box 32 and 13. It is connected to a high frequency power supply 34 for bias of 56 MHz. In some cases, the high frequency power supply 34 for bias is not provided.
[0012]
The support table 26 that supports the mounting table 24 is provided with a cooling jacket 36 for flowing cooling water or the like for cooling the wafer during plasma processing. In addition, you may provide the heater for heating in this mounting base 24 as needed.
For example, a plasma gas supply nozzle 38 made of quartz pipe for supplying a plasma gas, for example, argon gas, or a processing gas, for example, a deposition gas, is introduced into the side wall of the processing container 22 as a gas supply means. A processing gas supply nozzle 40 made of quartz pipe is provided, and these nozzles 38 and 40 are respectively connected to a plasma gas source 54 and a processing gas by gas supply paths 42 and 44 via mass flow controllers 46 and 48 and on-off valves 50 and 52, respectively. Connected to source 56. SiH ₄ , O ₂ , N ₂ gas or the like can be used as the deposition gas as the processing gas.
[0013]
A gate valve 58 that opens and closes when a wafer is loaded into and unloaded from the inside of the container side wall is provided outside the container side wall, and a cooling jacket 60 that cools the side wall is provided. In addition, an exhaust port 62 is provided at the bottom of the container, and an exhaust pipe 64 connected to a vacuum pump (not shown) is connected to the bottom of the container, and the processing container 22 is evacuated to a predetermined pressure as necessary. It can be done.
The ceiling portion of the processing container 22 is opened, and an insulating plate 66 having a thickness of about 20 mm, which is permeable to microwaves made of a ceramic material such as AlN, is a sealing member 68 such as an O-ring. It is provided airtight via.
[0014]
Further, a disk-shaped planar antenna member 70 characterized by the present invention, a slow wave material 72 having high dielectric constant characteristics, a dielectric constant adjusting member 74 also characterized by the present invention, on the upper surface of the insulating plate 66, A height adjusting mechanism 76 for adjusting the height is provided. The planar antenna member 70 is configured as a bottom plate of a waveguide box 78 made of a hollow cylindrical container formed integrally with the processing container 22, and is provided to face the mounting table 24 in the processing container 22. It is done. The waveguide box 78 is grounded. The specific configurations of the planar antenna member 70, the dielectric constant adjusting member 74, and the height adjusting mechanism 76 will be described later.
An outer tube 80 </ b> A of the coaxial waveguide 80 is connected to the center of the upper portion of the waveguide box 78, and an internal cable 80 </ b> B is connected to the center of the planar antenna member 70. The coaxial waveguide 80 is connected to a microwave generator 86 of 2.45 GHz, for example, via a mode converter 82 and a waveguide 84 so as to propagate the microwave to the planar antenna member 70. It has become. This frequency is not limited to 2.45 GHz, and other frequencies such as 8.35 GHz may be used. As this waveguide, a waveguide having a circular or rectangular cross section or a coaxial waveguide can be used. In this embodiment, a coaxial waveguide is used. In addition, in the waveguide box 78, on the upper surface of the planar antenna member 70, a disc-shaped slow wave material 72 having the high dielectric constant characteristics is provided. The guide wavelength is shortened. As this slow wave material 72, aluminum nitride etc. can be used, for example.
[0015]
When the planar antenna member 70 is compatible with an 8-inch wafer, the planar antenna member 70 is a circle made of a material having good conductivity and thermal conductivity, for example, a diameter of 30 to 40 mm and a thickness of about 4 to 20 mm, for example, 15 mm. A plate, for example, a copper plate or an aluminum plate whose surface is silver-plated, and as shown in FIG. 2, a large number of microwave radiation holes 88 made of, for example, circular through-holes are formed on the antenna member 70. According to the arrangement form, they are arranged approximately evenly. The arrangement form of the microwave radiation holes 88 is not particularly limited. For example, the microwave radiation holes 88 may be arranged concentrically, spirally, or radially. The shape of the microwave radiation hole 88 is not limited to a circle, and may be, for example, a slit having a long groove, or the slit-shaped radiation holes may be arranged in a square shape.
[0016]
In the thick planar antenna member 70, a heat medium passage 90 for flowing a cooling heat medium avoids the numerous microwave radiation holes 88 so as to substantially meander in the entire surface of the antenna member 70. It is formed over. For example, as shown in FIG. 3, such a planar antenna member 70 has a heat medium passage 90 formed on the surface of a thick plate-shaped antenna base material 70 </ b> A in an open state on its upper surface. In addition, the antenna lid member 70B is joined by brazing or the like, so that the upper part of the heat medium passage 90 can be sealed. Both the antenna member 70A and the antenna lid member 70B may be previously formed with holes corresponding to the microwave radiation holes 88, or may be formed by drilling after joining the two members. Also good.
As a result, the planar antenna member 70 having the heat medium passage 90 inside and having both the upper and lower surfaces flat is formed. A medium inlet 92 for introducing a cooling heat medium into the heat medium passage 90 is formed at one end of the heat medium passage 90, and a medium outlet 94 is formed at the opposite position. As shown in FIG. 2, a circulation path 96 is provided so as to connect the medium inlet 92 and the medium outlet 94, and a circulation pump 98 for forcibly circulating the heat medium is provided in the circulation path 96. In addition, a heat medium temperature control unit 100 for controlling the temperature of the circulated heat medium is sequentially provided.
[0017]
On the other hand, as shown in FIG. 4, the dielectric constant adjusting member 74 installed above the slow wave material 72 is concentrically (here concentric), for example, an inner adjusting plate and an outer adjusting plate. There are two divided ring-shaped dielectric constant adjusting plates 74A and 74B. The dielectric constant adjusting plates 74A and 74B are made of a conductive material such as copper or aluminum and are grounded via the height adjusting mechanism 76 and the conductive box 78.
On the other hand, as shown in FIG. 4, for example, a plurality of, for example, three height adjustment mechanisms 76 for adjusting the height of each of the dielectric constant adjustment plates 74A and 74B are provided for each of the dielectric constant adjustment plates 74A and 74B. The lifting screws 102A and 102B (only two are shown in FIG. 1) are provided, and the lifting screws 102A and 102B are arranged substantially evenly along the circumferential direction.
[0018]
The lower ends of the elevating screws 102A and 102B are rotatably connected to the upper surfaces of the dielectric constant adjustment plates 74A and 74B via the loose fitting coupling portions 103A and 103B, and the upper ends thereof are The through holes 105 formed in the ceiling portion of the conductive box 78 are penetrated in a loosely fitted state.
Further, height adjusting nuts 104A and 104B that are screwed with the lifting screws 102A and 102B are provided on the upper surface side of the conductive box 76 at the upper end portions of the lifting screws 102A and 102B. The height adjustment of the dielectric constant adjusting plates 74A and 74B can be individually performed by rotating the height adjusting nuts 104A and 104B manually or automatically to raise and lower the elevating screws 102A and 102B. .
Note that the structure of the height adjustment mechanism 76 is not limited as long as the height adjustment of the dielectric constant adjustment plates 74A and 74B can be performed individually.
[0019]
Next, a processing method performed using the plasma processing apparatus configured as described above will be described.
First, the semiconductor wafer W is accommodated in the processing container 22 by the transfer arm (not shown) via the gate valve 58 and the lifter pin (not shown) is moved up and down to place the wafer W on the upper surface of the mounting table 24. Place on the surface.
Then, while maintaining the inside of the processing container 22 within a predetermined process pressure, for example, within a range of 0.01 to several Pa, for example, argon gas is supplied from the plasma gas supply nozzle 38 while controlling the flow rate, and from the processing gas supply nozzle 40. For example, SiH ₄ , O ₂ , N
_A deposition gas such as _{2 is} supplied while controlling the flow rate. At the same time microwave generator 8
6 is supplied to the planar antenna member 70 through the waveguide 84 and the coaxial waveguide 80, and the microwave whose wavelength is shortened by the slow wave material 72 is introduced into the processing space S. The plasma is generated by the above, and a predetermined plasma process, for example, a film forming process by plasma CVD is performed.
[0020]
Here, for example, 2.45 GHz microwave generated by the microwave generator 86 propagates through the coaxial waveguide 80 in the TEM mode after mode conversion and reaches the planar antenna member 70 in the waveguide box 78. While the circular antenna member 70 to which the internal cable 80B is connected is propagated radially from the central portion to the peripheral portion, a large number of concentric or spiral shapes are formed on the antenna member 70 substantially equally. The microwave is introduced into the processing space S immediately below the antenna member 70 through the insulating plate 66 through the microwave radiation hole 88.
The argon gas excited by the microwave is turned into plasma and diffused downward to activate the processing gas to create active species. By the action of the active species, the surface of the wafer W is processed, for example, plasma CVD processing is performed. Will be given.
[0021]
Here, when microwaves propagate through the planar antenna member 70, it is inevitable that heat is generated by the resistance heat (Joule heat). In this case, if this heat generation is left unattended, the temperature of the planar antenna member 70 itself gradually increases, which may cause the antenna member 70 to be thermally deformed. However, in this embodiment, the planar antenna member 70 is appropriately cooled by flowing a cooling heat medium through the heat medium passage 90 formed in the planar antenna member 70. It becomes possible to prevent.
In addition, since the thermal deformation of the planar antenna member 70 can be prevented, it is possible to stabilize the combined state of the antenna member 70 and the plasma in the processing space S and stabilize the plasma distribution.
[0022]
That is, as shown in FIG. 2, the cooling heat medium introduced into the heat medium passage 90 from the medium inlet 92 flows in a serpentine manner in the passage 90 and is discharged from the medium outlet 94 as it is. The discharged heat medium is appropriately temperature-controlled by the heat medium temperature control unit 100 and then supplied again to the medium inlet 92 side for circulation.
As described above, it is possible to cool the entire planar antenna member 70 by flowing a cooling heat medium through the heat medium passage 90.
In this case, as the number of wafers to be processed increases, the temperature of the planar antenna member 70 tends to increase sequentially, so that the cooling power also increases sequentially by decreasing the temperature of the heat medium or increasing the flow rate sequentially. As a result, during the process, the planar antenna member 70 is always kept at a substantially constant temperature, for example, the process temperature, but within the range of 40 to 110 ° C., for example, about 80 ° C. at all times. The heat medium temperature control unit 100 controls the temperature of the heat medium. In this case, cooling water, fluorinate, chiller, or the like can be used as the heat medium.
[0023]
Further, when microwaves are transmitted through the insulating plate 66, for example, about 30% of the microwave power is consumed due to this dielectric loss, and heat generation is unavoidable. The insulating plate 66 is also heated by radiant heat or the like. In this case, if this heat is left untreated, the temperature of the insulating plate 66 itself gradually increases, and there is a risk that the semiconductor wafer W being processed is thermally adversely affected. As described above, the flat antenna member 70 is placed in close contact with the cooled planar antenna member 70, so that it is indirectly cooled by the planar antenna member 70. It becomes possible to prevent giving.
[0024]
Accordingly, since the temperature of the insulating plate 66 can be maintained substantially constant during the processing of a plurality of wafers, the reproducibility of the plasma processing for the wafer can be greatly improved, and the in-plane uniformity of the plasma processing for the wafer can be improved. Can also be improved. Furthermore, in general, the microwave propagating downward from the planar antenna member 70 propagates with a uniform electric potential in the plane, but the plasma generated in the processing space S descends in the processing space S from the generation point. Since it diffuses in the direction, the plasma density tends to have a high distribution near the center of the wafer on the wafer surface. However, in this embodiment, the height adjusting nuts 104A and 104B of the height adjusting mechanism 76 provided in the conductive box 78 are rotated to move the lifting screws 102A and 102B in the vertical direction, as shown in FIG. Further, the height of each dielectric constant adjusting plate 74A, 74B of the dielectric constant adjusting member 74 is adjusted.
[0025]
In FIG. 5, by setting the inner dielectric constant adjusting plate 74A higher than the outer dielectric constant adjusting plate 74B, the distance H2 between the upper surface of the planar antenna member 70 and the outer dielectric constant adjusting plate 74B. The distance H1 between the upper surface of the planar antenna member 70 and the inner dielectric constant adjusting plate 74A is made larger.
In this case, the propagation efficiency of the microwaves below the dielectric constant adjusting plates 74A and 74B depends on the dielectric constants immediately below the dielectric constant adjusting plates 74A and 74B. That is, the dielectric constant immediately below the inner dielectric constant adjusting plate 74A is a composite dielectric constant of the dielectric constant of the slow wave material 72 and the dielectric constant of the air layer having the height (thickness) H1, and the outer dielectric constant. The dielectric constant immediately below the rate adjusting plate 74B is a composite dielectric constant of the dielectric constant of the slow wave material 72 and the dielectric constant of the air layer having the height (thickness) H2, but the height H1 is higher than the height H2. Since the larger is larger, the composite dielectric constant on the height H1 side becomes smaller, and as a result, the propagation efficiency of the microwave propagating through this portion is lowered than the propagation efficiency on the outer peripheral side. For this reason, since the propagation efficiency of the microwave on the inner peripheral side is lowered, the plasma generation efficiency in this part can be made lower than that on the outer peripheral side. Therefore, it is possible to suppress the plasma density near the center of the wafer, which tends to be high, and to improve the in-plane uniformity of the plasma density on the wafer surface.
[0026]
In this case, of course, the heights H1 and H2 are set as appropriate so as to obtain an optimal plasma density uniformity.
Although the dielectric constant adjusting plates 74A and 74B divided into two are used here, the number of divisions is not limited to this, and it may be divided into three or more to perform control with higher resolution.
In this embodiment, the case where the film forming process is performed on the semiconductor wafer has been described as an example. However, the present invention is not limited to this and can be applied to other plasma processes such as a plasma etching process and a plasma ashing process.
Further, the object to be processed is not limited to a semiconductor wafer, and can be applied to a glass substrate, an LCD substrate, and the like.
[0027]
【The invention's effect】
As described above, according to the plasma processing apparatus of the present invention, the following excellent operational effects can be exhibited.
According to the present invention, since the dielectric constant adjusting member is provided on the upper portion of the slow wave material so that the height can be adjusted, the plasma density is controlled by adjusting the dielectric constant immediately below the dielectric constant adjusting member, and thereby the processing container In-plane uniformity of the plasma density can be improved.
According to the related art of the present invention, the planar antenna member can be cooled by flowing a coolant through the heat medium passage formed inside the planar antenna member, and this thermal deformation can be prevented. In addition, since the planar antenna member can be prevented from being thermally deformed, the coupling state between the antenna member and the plasma in the processing container can be stabilized, and therefore the in-plane uniformity and reproducibility of the plasma processing on the object to be processed can be improved. Can be made.
According to another related technique of the present invention, the temperature of the planar antenna member can be controlled by the heat medium temperature control unit.
According to another related art of the present invention, since the microwave has been made above and below the surface has no irregularities flat surface of the planar antenna member to propagate, making it possible to propagate the microwave propagation form the designed it can.
Further, according to another related technique of the present invention, the insulating plate in close contact with the planar antenna member can be effectively cooled and maintained at a constant temperature, and the object to be processed is thermally adversely affected. Can be prevented.
[Brief description of the drawings]
FIG. 1 is a configuration diagram showing an example of a plasma processing apparatus according to the present invention.
FIG. 2 is a plan view showing a planar antenna member.
FIG. 3 is an explanatory diagram for explaining a method of manufacturing a planar antenna member.
FIG. 4 is a plan view showing a dielectric constant adjusting plate.
FIG. 5 is an operation explanatory diagram for explaining the operation of a dielectric constant adjusting plate;
FIG. 6 is a configuration diagram showing a conventional general plasma processing apparatus.
FIG. 7 is a plan view showing a planar antenna member.
[Explanation of symbols]
20 plasma processing apparatus 22 processing container 24 mounting table 38, 40 nozzle (gas supply means)
66 Insulating plate 70 Planar antenna member 72 Slow wave material 74 Dielectric constant adjusting member 74A, 74B Dielectric constant adjusting plate 76 Height adjusting mechanism 86 Microwave generator 88 Microwave radiation hole 90 Heat medium passage 92 Medium inlet 94 Medium outlet 96 Circulation Path 100 Heat medium temperature controller 102A, 102B Lifting screw 104A, 104B Height adjustment nut W Semiconductor wafer (object to be processed)

Claims (5)

A processing container in which the ceiling is opened and the inside can be evacuated, an insulating plate that is airtightly attached to the opening of the ceiling of the processing container, and the processing container for placing the object to be processed Microwaves for plasma generation are introduced into the processing vessel through the insulating plate from the mounting table provided and a plurality of microwave radiation holes provided at a predetermined pitch above the insulating plate. A planar antenna member, a slow wave material provided above the planar antenna member for reducing the wavelength of the microwave, and a gas supply means for introducing a predetermined gas into the processing vessel In the device
A dielectric constant adjusting member provided on top of the slow wave material;
A plasma processing apparatus, comprising: a height adjusting mechanism that adjusts a height of the dielectric constant adjusting member to approach and separate the slow wave material . The plasma processing apparatus according to claim 1 , wherein the dielectric constant adjusting member is made of a conductive material and is grounded . The plasma processing apparatus according to claim 1, wherein the dielectric constant adjusting member includes a plurality of dielectric constant adjusting plates divided concentrically . The plasma processing apparatus according to claim 3, wherein the plurality of dielectric constant adjustment plates are individually adjustable in height . 5. The plasma processing apparatus according to claim 1, wherein the height adjusting mechanism includes a lifting screw connected to the dielectric constant adjusting member . 6.

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