JP4534430B2 - Electro-optical device, substrate for electro-optical device, method for manufacturing electro-optical device, and electronic apparatus - Google Patents

Description

[0001]
BACKGROUND OF THE INVENTION
The present invention relates to an electro-optical device using a light-emitting element such as an organic EL (Electronic Luminescence) element, a substrate for an electro-optical device, a method for manufacturing the electro-optical device, and an electronic apparatus.
[0002]
[Prior art]
In recent years, organic EL elements have attracted attention as next-generation light-emitting devices that can replace conventional liquid crystal elements. An organic EL element has a structure in which a light emitting layer is sandwiched between two electrodes, and is a self-luminous element that emits light in response to a current flowing between both electrodes. As a result, the display element has excellent characteristics such as low power consumption.
For driving such an organic EL element, an active matrix method using an active element such as a thin film transistor (hereinafter abbreviated as “TFT”) and a passive without using an active element are used as in a liquid crystal element. Although it can be roughly classified into the matrix system, the active matrix system according to the latter is considered to be excellent because the drive voltage is low.
[0003]
By the way, when the organic EL element is driven by an active matrix system, a structure in which the active element and the organic EL element are formed on a single substrate is not preferable from the viewpoint of manufacturing such as yield and throughput. For this reason, in recent years, a technique has been proposed in which an active element and an organic EL element are formed on separate substrates and then the two substrates are bonded together (for example, see Patent Documents 1 and 2).
[0004]
[Patent Document 1]
JP 2002-82633 A (see FIG. 3)
[Patent Document 2]
JP 2001-117509 A (see FIGS. 2 and 3)
[0005]
[Problems to be solved by the invention]
  By the way, since the organic EL element is literally made of an organic material, it has the disadvantages that it easily deteriorates due to an organic solvent, moisture, etc., and easily breaks when stress is applied to the light emitting layer. The technique described in the above publication is not sufficient from the viewpoint of preventing the deterioration and destruction of the organic EL element because the stress when the substrates are bonded together is directly applied to the electrodes constituting the organic EL element. There wasn't.
  The present invention has been made in view of such circumstances, and an object thereof is to drive a substrate on which a light emitting element such as an organic EL element is formed, and the light emitting element.activeAn object of the present invention is to provide an electro-optical device, a substrate for an electro-optical device, a method for manufacturing the electro-optical device, and an electronic apparatus in which deterioration and destruction of the light-emitting element are suppressed when the substrate on which the element is formed is bonded.
[0006]
[Means for Solving the Problems]
  In order to achieve the above object, an electro-optical device according to the present invention includes a first substrate and a second substrate, and the first substrate includes a transparent substrate and a plurality of substrates formed on the substrate. Across the gap between the plurality of individual electrodes and the plurality of individual electrodesWhen the plurality of individual electrodes swelled in the direction opposite to the observation side in a plan view of the base material, a lattice shapeA partition wall formed, a light emitting layer formed in a region partitioned by the partition, a common electrode formed so as to cover the light emitting layer, and a sealing layer covering the partition wall and the common electrode; A first connection terminal that is provided to face the individual electrode with the sealing layer interposed therebetween and that is electrically connected to the individual electrode through a conductive portion that penetrates the partition wall and the sealing layer, and a light emitting element Is formed by stacking the individual electrodes, the light emitting layer, and the common electrode, and the common electrode is common to a plurality of light emitting elements and avoids a region where the sealing layer is scheduled to penetrate. The second substrate is provided corresponding to the drive circuit for driving the plurality of light emitting elements and the first connection terminal, respectively, and connects the drive circuit and the plurality of light emitting elements. A second connection terminal, and Said second connection terminals provided between the first connection terminals provided on the substrate on the second substrate are arranged so as to electrically connect. According to this electro-optical device, since the light emitting element of the first substrate is covered with the sealing layer, the deterioration of the light emitting element is prevented. Furthermore, since the stress is not directly applied to the light emitting element when bonded to the second substrate, the light emitting element is prevented from being broken. In addition, since only the first connection terminal is exposed on the surface of the sealing layer in the first substrate, the contact resistance between the connection terminals can be reduced as a result of widening unless the first connection terminal contacts the adjacent connection terminal. It becomes possible. In addition, the light emitting element here includes, in addition to the organic EL element described above, an LED, a cell of a plasma display that emits light by discharge between electrodes, and the like.
[0007]
  In this electro-optical device, the individual electrode is positioned closer to the base material than the common electrodeIt is good.In this configuration, it is preferable that the individual electrodes have transparency and the common electrode has reflectivity. According to this configuration, since the resistance of the common electrode can be reduced, display unevenness can be prevented. In addition, since the light emitted from the light emitting element is reflected by the common electrode, the light use efficiency is also improved..
[0009]
In this electro-optical device, the light emitting layer preferably includes an organic electroluminescence layer, and the light emitting element is preferably an organic EL element in which one of the individual electrode and the common electrode is a cathode and the other is an anode.
In the electro-optical device, the second substrate includes a plurality of scanning lines and a plurality of data lines intersecting each other, and the driving circuit intersects the plurality of scanning lines and the plurality of data lines. A switching transistor that is turned on when a scanning line corresponding to the intersection is selected, and an electric signal on a data line corresponding to the intersection when the switching transistor is turned on. And a driving transistor whose one terminal is electrically connected to the second connection terminal and whose operation state is determined according to the charge accumulated in the capacitance element. The structure which has is preferable.
According to this configuration, even when the switching transistor is turned off, the conduction state of the driving transistor is determined by the charge accumulated in the capacitor element, so that it is possible to continue supplying current to the light emitting element.
In this electro-optical device, the drive circuit may include a thin film transistor. Moreover, it is preferable to provide such an electro-optical device as the electronic apparatus.
[0010]
  To achieve the above object, an electro-optical device substrate according to the present invention spans a transparent base material, a plurality of individual electrodes formed on the base material, and a gap between the plurality of individual electrodes. A portion that bulges in the direction opposite to the observation side with respect to the plurality of individual electrodes is formed in a partition wall formed in a lattice shape when the base material is viewed in plan, and a region partitioned by the partition wall. A light emitting layer, a common electrode formed to cover the light emitting layer, a sealing layer covering the partition wall and the common electrode, and the individual electrode across the sealing layer, A first connection terminal that is electrically connected to the individual electrode through a partition and a conductive portion that penetrates the sealing layer.The other boardThe light emitting element is formed by stacking the individual electrode, the light emitting layer, and the common electrode, and the common electrodeBut, Which is common to a plurality of light emitting elements, and is formed to avoid a region where the sealing layer is scheduled to penetrate.Pasted to the other board,A drive circuit for driving each of the plurality of light emitting elements; a second connection terminal provided to be connectable to the first connection terminal; and electrically connecting the drive circuit and the plurality of light emitting elements; WithAn electro-optical device is configured by bonding with the counterpart substrate.The second connection terminal is connected to the first connection terminal by the bonding. The substrate for the electro-optical device is used as a second substrate of the electro-optical device.
[0011]
  In order to achieve the above object, the electro-optical device substrate according to the present invention includes:An electro-optical device substrate that constitutes an electro-optical device by bonding with a counterpart substrate,A base material having transparency, a plurality of individual electrodes formed on the base material, and a gap between the plurality of individual electrodesIt swells in the opposite direction to the observation side with respect to the plurality of individual electrodes, and in a lattice shape when the substrate is viewed in planA partition wall formed, a light emitting layer formed in a region partitioned by the partition, a common electrode formed so as to cover the light emitting layer, and a sealing layer covering the partition wall and the common electrode; A first connection terminal that is provided to face the individual electrode with the sealing layer interposed therebetween and that is electrically connected to the individual electrode through a conductive portion that penetrates the partition wall and the sealing layer, and a light emitting element Is formed by stacking the individual electrodes, the light emitting layer, and the common electrode, and the common electrode is common to a plurality of light emitting elements and avoids a region where the sealing layer is scheduled to penetrate. FormedThe counterpart substrate is provided so as to be connectable to a drive circuit for driving the plurality of light emitting elements, respectively, and the first connection terminal, and electrically connects the drive circuit and the plurality of light emitting elements. A second connection terminal, and the first connection terminal is connected to the second connection terminal by the bonding.The substrate for the electro-optical device is the first of the electro-optical device.1Used as a substrate.
[0012]
  In order to achieve the above object, a method of manufacturing an electro-optical device according to the present invention includes a step of forming a plurality of individual electrodes on a transparent substrate, and straddling a gap between the plurality of individual electrodes.For the plurality of individual electrodes, the portion raised in the direction opposite to the observation side becomes a lattice shape when the base material is viewed in plan view.A step of forming a partition, a step of forming a light emitting layer in a region partitioned by the partition, a step of forming a common electrode so as to cover the light emitting layer, and a sealing layer covering the partition and the common electrode Forming a first connection terminal that is electrically connected to the individual electrode through a conductive portion that penetrates the partition wall and the sealing layer, and passes the common electrode through the sealing layer. Forming a drive circuit that drives each of the plurality of light emitting elements on a base material different from the base material having transparency, Forming a second connection terminal for connecting a plurality of light emitting elements corresponding to the first connection terminal, and electrically connecting the first connection terminal and the second connection terminal. A step of automatically connecting. According to this manufacturing method, since the light emitting element of the first substrate is covered with the sealing layer, the deterioration of the light emitting element is prevented. Furthermore, since the stress is not directly applied to the light emitting element when bonded to the second substrate, the light emitting element is prevented from being broken. In addition, since only the first connection terminal is exposed on the surface of the sealing layer in the first substrate, the contact resistance between the connection terminals can be reduced as a result of widening unless the first connection terminal contacts the adjacent connection terminal. It becomes possible.
[0013]
In this manufacturing method, the step of electrically connecting the first connection terminal and the second connection terminal includes the step of connecting an anisotropic conductive material between the first connection terminal and the second connection terminal. It is preferable to include the process of providing in between. As a result, the first and second connection terminals can be electrically connected easily.
[0014]
  In the above manufacturing method,in frontThe step of forming the first connection terminal includes the partition and the sealing layer.TheScheduled areasoOpeningShiThen, a step of exposing a part of the individual electrode may be included. Since the sealing layer and the partition wall are opened at once, the opening only needs to be performed once to connect the first connection terminal to the individual electrode.
[0015]
  In the above manufacturing method,The step of forming the partition wall includes the step ofA step of forming a partition so as to have a plurality of apertures respectively reaching the plurality of individual electrodes, and a step of applying a conductive material to the plurality of apertures,In the step of forming the common electrode,The common electrode is formed so as not to contact the conductive material.AndThe step of forming the first connection terminal includes the step of forming the sealing layer.In the planned areaOpeningShiThen, a step of exposing a part of the conductive material may be included. In the first substrate, the opening for conducting from the first connection terminal to the individual electrode is twice for each of the partition wall and the sealing layer, but the depth required for one opening is shallow. Therefore, it is possible to reduce defects such as chipping caused by opening.
[0016]
  In the above manufacturing method,,After stacking the common electrode, forming a partition for partitioning the plurality of light emitting elements, forming a light emitting layer in a region partitioned by the partition, and at least one of the plurality of individual electrodes. Part of the partitionOn the topA step of forming the first connection terminal, wherein the step of forming the first connection terminal is a part of the individual electrode formed so as to be located above the partition wall by opening the sealing layer A step of exposing may be included. In the first substrate, the opening for conducting from the first connection terminal to the individual electrode can be performed only once for the sealing layer.
[0017]
  here,The step of forming the light emitting layer preferably includes a step of applying a liquefied light emitting material to a region partitioned by the partition wall. When the liquefied luminescent material is ejected, the liquid material stays in the pixel by the partition wall and does not extend to adjacent pixels. In addition, since the light emitting material is selectively formed, the amount of the light emitting material that is wasted is less than that of the formation method using the photolithography technique.
[0018]
DETAILED DESCRIPTION OF THE INVENTION
Hereinafter, embodiments of the present invention will be described with reference to the drawings.
[0019]
<First Embodiment>
First, for the convenience of explanation, the entire display system including the electro-optical device according to the embodiment will be described. FIG. 1 is a block diagram showing the configuration of the display system 10.
As shown in this figure, in the electro-optical device 100 as a display panel, a plurality of m scanning lines 202 and a plurality of n data lines 204 are orthogonal to each other (electrically insulated). A pixel circuit 110 having an organic EL element is provided at each of the intersections. That is, in the electro-optical device 100, the pixels are arranged in a matrix with m rows and n columns.
The image memory 130 has a storage area corresponding to each pixel, and in each storage area, digital data Dmem defining the gradation (luminance) of the corresponding pixel is stored. The digital data Dmem is supplied from a CPU (not shown in FIG. 1) or the like and written in a designated storage area.
[0020]
The scanning line driving circuit 140 supplies a scanning signal to the m scanning lines 202. Specifically, the scanning line driving circuit 140 sequentially selects the scanning lines 202 one by one for each horizontal scanning period, and applies an active level (H level) scanning signal to the selected scanning lines 202. A scanning signal at an inactive level (L level) is supplied to the scanning lines 202 from the first row to the last m-th row. Here, for convenience of explanation, the scanning signal supplied to the scanning line 202 in the i-th row (i is an integer satisfying 1 ≦ i ≦ m) is denoted as Yi.
The control circuit 150 controls the selection of the scanning line 202 by the scanning line driving circuit 140 and, in synchronization with the selection operation of the scanning line 202, the digital data Dpix-1 corresponding to the data lines 204 from the first column to the nth column. ˜Dpix-n are read from the image memory 130 and supplied to the data line driving circuit 160.
[0021]
The data line driving circuit 160 has a D / A converter for each data line 204 (not shown). Here, in the D / A converter in the jth column (j is an integer satisfying 1 ≦ j ≦ n), the digital corresponding to the intersection of the selected scanning line 202 and the data line 204 in the jth column. Data Dpix-j is supplied. Then, the D / A converter converts the supplied digital data Dpix-j into an analog voltage, and applies it to the corresponding j-th column data line 204 as the data signal Xj.
Therefore, for example, the voltage of the data signal X3 applied to the data line 204 in the third column is the digital data of the pixel corresponding to the intersection between the scanning line 202 selected at that time and the data line 204 in the third column. Dpix-3 is converted to analog voltage.
The power supply circuit 170 supplies appropriate power to each unit.
[0022]
It should be noted that the elements 100, 130, 140, 150, 160, and 170 are actually various in the case where each element is composed of independent parts, or when part or all of them are composed integrally. Take the form. For example, the scanning line driving circuit 140 and the data line driving circuit 160 may be integrated with a pixel driving circuit on a TFT substrate described later. Such integration is advantageous in reducing the size and cost of the entire device as compared to a type in which the peripheral circuit is mounted on another substrate.
[0023]
<Pixel circuit>
Next, the pixel circuit 110 in the electro-optical device 100 will be described. FIG. 2 is a circuit diagram showing an example of the configuration. Although all the pixel circuits 110 have the same configuration, the pixel circuit 110 provided at the intersection of the i-th scanning line 202 and the j-th data line 204 will be described as a representative here. I will decide. As shown in this figure, the pixel circuit 110 provided at the intersection of the scanning line 202 and the data line 204 includes a pixel driving circuit 250 and an organic EL element 310 as a light emitting element. Yes.
As will be described in detail later, the electro-optical device 100 is composed of two substrates, a TFT substrate having a pixel driving circuit 250 and an EL substrate having an organic EL element 310, and both substrates are provided for each pixel circuit 110. It is configured to be electrically connected via N points.
[0024]
The pixel driving circuit 250 includes two TFTs 212 and 214 and a capacitor element 220. Among these, the TFT 214 as a switching transistor is an n-channel type, its gate is connected to the scanning line 202, its source is connected to the data line 204, and its drain is the gate of the TFT 212 and one end of the capacitor 220. It is connected to the. The TFT 212 as a driving transistor is a p-channel type, and its source is connected to the power supply line 209 to which the higher voltage Vdd of the power supply is applied, while its drain is connected to the organic EL element 310 via the N point. Connected to the anode. The other end of the capacitive element 220 is connected to the power line 209.
As will be described later, the organic EL element 310 has an organic EL layer sandwiched between an anode and a cathode, and emits light with a luminance corresponding to a forward current. Here, in the first embodiment, the cathode of the organic EL element 310 is an electrode that is electrically common to all the pixel circuits, and is grounded to a low (reference) voltage Gnd in the power supply. Note that, as shown in FIG. 15 described later, in the organic EL element 310, the anode may be a common electrode.
[0025]
In the pixel circuit 110, when the scanning line 202 in the i-th row is selected and the scanning signal Yi becomes the H level, the n-channel TFT 214 is turned on between the source and the drain. The voltage of the data signal Xj is applied. Accordingly, the conduction state between the source and the drain of the TFT 212 is determined according to the voltage of the data signal Xj. As a result, a current corresponding to the voltage flows through the organic EL element 310, and the organic EL element 310 emits light. On the other hand, when the TFT 214 is on, charges corresponding to the gate voltage of the TFT 212 are accumulated in the capacitor 220.
[0026]
Next, when the selection of the scanning line 202 of the i-th row is completed and the scanning signal Yi becomes L level, the TFT 214 is turned off, but the gate voltage of the TFT 212 is held by the capacitor 220. Therefore, a current substantially equal to that when the TFT 214 is turned on continues to flow through the organic EL element 310. For this reason, the organic EL element 310 continues to emit light at a luminance corresponding to the current at the time of selection even when the i-th scanning line 202 is not selected.
Here, only the pixel circuit 110 in the i row and j column has been described, but since the scanning line 202 in the i row is shared by the m pixel circuits 110, the m pixel circuits that are shared. A similar operation is also executed at 110.
Further, the scanning signals Y1, Y2, Y3,..., Ym are exclusively H level in order. As a result, the same operation is executed in all the pixel circuits 110, and an image of one frame is displayed. This display operation is repeated every vertical scanning period.
In the pixel circuit 110 shown in FIG. 2, the voltage corresponding to the digital value of the digital data is applied to the data line 204 when the scanning line 202 is selected. May be supplied to the data line 204. Even in such a configuration, since the gate voltage of the TFT 212 is held in the capacitor 220, an effect equivalent to the configuration in which a voltage corresponding to the luminance is applied can be obtained.
[0027]
<Structure of electro-optical device>
Next, the structure of the electro-optical device 100 will be described. FIG. 3A and FIG. 3B are cross-sectional views illustrating the main configuration of the electro-optical device 100. As shown in these drawings, the electro-optical device 100 has a structure in which a TFT substrate 200 and an EL substrate 300 are bonded to each other so that the terminal formation surfaces face each other and the terminals are electrically connected to each other. It has become. Here, the terminals are electrically connected by the anisotropic conductor 400. Specifically, as shown in FIG. 3A, first, the TFT substrate 200 and the EL substrate 300 are opposed to each other on the terminal formation surface, and the surface is covered with a metal film between them. When the anisotropic conductor 400 in which the capsule 410 is dispersed in a sheet-like adhesive made of epoxy or the like is sandwiched, and secondly, the TFT substrate 200 and the EL substrate 300 are thermocompression bonded, FIG. As shown, the terminals are electrically connected via the microcapsule 410. Therefore, the connection point between the terminals is the N point in FIG.
[0028]
In the TFT substrate 200, for example, a scanning line 202, a data line 204, a power supply line 209, and a pixel driving circuit 250 are formed on a base material 201 such as plastic or glass, and these parts are covered with an insulating layer 260. It has a structure. In the insulating layer 260, a contact hole 230 is provided for each pixel driving circuit 250 and opens to the drain of the TFT 212. The lead terminal (second connection terminal) 240 is formed on the surface of the insulating layer 260 and is connected to the drain of the TFT 212, that is, the output terminal of the pixel driving circuit 250 through the contact hole 230. Yes.
[0029]
Next, a planar configuration of the TFT substrate 200 will be described. FIG. 4 is a plan view showing a state in which the extraction terminal 240 and the insulating layer 260 are removed from the TFT substrate 200 for explanation.
First, in FIG. 4, the lowermost layer is a semiconductor layer of TFTs 212 and 214, which is formed by patterning, for example, a crystalline polysilicon layer. Next, a 2nd layer is a gate electrode layer, for example, and is divided roughly into the gate electrode of TFT212, and the scanning line 202. FIG. Here, the gate electrode of the TFT 212 according to the former constitutes a part of the capacitive element 220, and the scanning line 202 according to the latter also includes a portion branched to the TFT 214 side. A portion where the lowermost semiconductor layer intersects with the second gate electrode layer is a channel region of the TFTs 212 and 214.
Subsequently, the third layer is an aluminum layer, for example, and is roughly divided into a wiring for connecting to the source and drain of the TFT, a data line 204, and a power supply line 209. Note that the connection between wirings made of different layers and the connection between the source / drain of the TFT and the wiring are made through contact holes indicated by “x” in FIG.
In addition, the capacitive element 220 is formed by stacking an extension part of the gate electrode of the TFT 212, an insulating film (not shown) covering the extension part, and a branch part of the power supply line 209.
In FIG. 4, the top gate TFT has been described as an example, but it is needless to say that a bottom gate may be used.
[0030]
In FIG. 4, the drawing terminal 240 located in the uppermost layer is not shown for convenience of explanation, and therefore the shape and arrangement of the drawing terminal 240 are shown in FIG. As shown in FIG. 5, the lead terminal 240 is formed in a rectangular shape on the surface of the insulating layer 260. Since the lead terminal 240 is connected to the drain of the TFT 214 in the pixel driving circuit 250 through the contact hole 230, it is provided for each pixel circuit 110 (pixel driving circuit 250).
[0031]
Returning to FIG. 3A again, in the EL substrate 300, the base material 301 is, for example, plastic or glass, and has transparency. On the surface of the substrate 301, an individual electrode 303 that is an anode of the organic EL element 310 (see FIG. 2) is formed in a rectangular shape for each pixel. The individual electrode 303 is a transparent conductor such as ITO (Indium Tin Oxide).
The bank 305 is a partition formed in a vertical and horizontal grid so as to straddle the gap between the individual electrodes 303. The bank 305 is used to reduce color mixing and light leakage between pixels, and to prevent the discharged ink composition from spreading to adjacent pixels when the organic EL layer 313 is formed by an inkjet method. It is provided for the reason.
[0032]
The organic EL layer 313 includes a hole transport layer, a light emitting layer, and an electron injection layer, but the hole transport layer and the electron injection layer are not necessarily required. For this reason, in FIG. 3A, the stacked body of the hole transport layer and the light emitting layer is illustrated as the organic EL layer 313, and the electron injection layer is not illustrated.
The common electrode 323 functions as a cathode of the organic EL element 310, and is a reflective conductor common to all pixels.
Here, the common electrode 323 is formed so as to cover the bank 305 and the organic EL layer 313. However, the common electrode 323 is not in a so-called solid state, but in the top portion of the bank 305 where the contact hole 330 is formed. The opening 325 opens so as not to contact the connection terminal 340 via the contact hole 330.
The sealing layer 360 is formed so as to cover the common electrode 323 and the bank 305 with an insulating material in order to protect the organic EL layer 313 and the like from the outside air. The contact hole 330 is provided for each pixel and reaches the individual electrode 303 through a conductive portion that penetrates the sealing layer 360 and the bank 305. Then, the connection terminal (first connection terminal) 340 is connected to the corresponding individual electrode 303 via the contact hole 330 (inside conductive portion).
[0033]
Here, the arrangement of the connection terminals 340 in the EL substrate 300 will be described with reference to FIG. 6 is a plan view showing the shape and arrangement of the connection terminals 340, it should be noted that the light emitted by the organic EL element 310 is directed to the back side of the drawing.
As shown in FIG. 6, the connection terminal 340 is formed in substantially the same shape as the extraction terminal 240 in the TFT substrate 200 on the surface of the sealing layer 360. The connection terminal 340 is connected to the individual electrode 303 (see FIG. 3A or FIG. 3B) through the contact hole 330. Note that a common electrode 323 exists between the connection terminal 340 and the individual electrode 303, but in the vicinity of the contact hole 330 provided in the bank 305 (and the sealing layer 360), the common electrode 323 is formed by the opening 325. Since the opening is made so as to avoid the contact hole 330, the common electrode 323 and the connection terminal 340 (individual electrode 303) are electrically disconnected from each other.
[0034]
<Manufacturing process of electro-optical device>
Next, the manufacturing process of the electro-optical device 100 will be described separately for each substrate. FIG. 7 is a diagram showing this manufacturing process.
The TFT substrate 200 will be briefly described. First, elements / wirings such as the pixel drive circuit 250 are formed on the base material 201 (see step (a)). Specifically, for example, an amorphous silicon layer is deposited on the substrate 201, and heat treatment is performed by laser annealing or the like to crystallize and pattern the silicon layer, thereby forming a semiconductor layer as a first layer. Next, the gate electrode as the second layer is formed and patterned to form the scanning line 202 and the like. Further, after the p-channel region is masked with a resist, doping is performed for the n-channel region, and the resist is peeled off, whereby an n-channel TFT 214 is formed. Subsequently, the n-channel region is masked with a resist, the p-channel region is doped, and the resist is peeled off to form a p-channel TFT 212. Next, an interlayer insulating film is formed, and the source / drain regions of the TFTs 212 and 214 are opened. Subsequently, a metal film such as aluminum, which is the third layer, is formed and patterned to form wiring such as data lines 204 and power supply lines 209.
In addition, since the well-known polysilicon process etc. can be used for the process of forming an element and wiring, it abbreviate | omits about further description.
[0035]
Subsequently, for example, SiO is covered so as to cover the region where the pixel driving circuit 250 and the like are formed.₂And Si_ThreeN_FourThen, an insulating layer 260 such as SiON is formed (see step (b)). Note that unevenness is generated on the surface of the insulating layer 260 to reflect wiring, TFT, and the like, and thus the surface of the insulating layer 260 is preferably planarized by CMP (Chemical Mechanical Polishing) or the like. Further, the insulating layer 260 may be formed of an acrylic resin or a polyimide resin, and the surface thereof may be planarized.
Next, the contact hole 230 is formed, and the insulating layer 260 is opened (see step (c)). Then, a metal film such as aluminum is formed and patterned to form the lead terminal 240 (see step (d)). Thereby, the TFT substrate 200 is completed.
[0036]
On the other hand, the EL substrate 300 will be described with reference to FIGS. 8 and 9 in addition to FIG. Here, FIGS. 8 and 9 are partial cross-sectional views for explaining the manufacturing process in the EL substrate, and steps (1) to (7) correspond to FIG. 7, respectively.
First, after forming a transparent conductor such as ITO on a transparent substrate 301 such as glass, a rectangular individual electrode 303 is formed by patterning using a photolithography technique (see FIGS. 7 and 7). Step (1) in FIG. 8). The individual electrode 303 is preferably subjected to a hydrophilic treatment so that an ink composition ejected by an ink jet method described later spreads with a uniform thickness.
Next, a bank 305 is formed (see step (2) in FIGS. 7 and 8). For example, the bank 305 is made of SiO.₂, SiN and other laminated materials are thickened.
[0037]
Subsequently, a hole transport layer and a light emitting layer constituting the organic EL layer 313 are formed by using an inkjet method (see step (3) in FIGS. 7 and 8). Here, the ink jet method is a method in which a layer material is dissolved or dispersed in a solvent, the ink composition is discharged from an ink jet head, and a pattern is formed through drying and heat treatment.
In addition, as a material of a positive hole transport layer, the mixture of PSS (polystyrene sulfonic acid) type | system | group is mentioned, What disperse | distributed this mixture in the polar solvent is used as an ink composition. In addition, an organic material such as PPV (polyparaphenylene vinylene) is used as the material of the light emitting layer.
[0038]
Next, a reflective metal such as aluminum is vapor-deposited in a state where the region to be the opening 325 is masked (see step (4) in FIGS. 7 and 8). Here, the reason why the mask vapor deposition is performed at the time of forming the common electrode 323 is that it is not desirable for the organic EL layer 313 to perform the etching process on the already formed organic EL layer 313.
When an electron injection layer is formed in the organic EL layer 313, a metal thin film such as calcium or lithium having the same shape as that of the common electrode 323 and having a high electron injection property (low work function) is formed below the common electrode 323. Form.
[0039]
Subsequently, for example, SiO is covered so as to cover the organic EL layer 313.₂Then, a sealing layer 360 made of SiON or the like is formed, and then the surface of the sealing layer 360 is planarized by CMP or the like in order to eliminate undulations reflecting the bank 305 or the like (steps in FIGS. 7 and 9). (Refer to (5)).
Further, a contact hole 330 is formed, and in this embodiment, the sealing layer 360 and the bank 305 are opened (see step (6) in FIGS. 7 and 9). Thereafter, a metal film such as aluminum is formed and patterned to form the conductive portion in the contact hole 330 and the connection terminal 340 (see step (7) in FIGS. 7 and 9). Thereby, the EL substrate 300 is completed.
[0040]
Then, as described above, the completed TFT substrate 200 and the EL substrate 300 face each other at the terminal formation surface, and the anisotropic conductor 400 is sandwiched between the two substrates so that the lead terminal 240 and the connection terminal 340 are connected to each other. Thermocompression bonding is performed in a state of being aligned so as to face each other. In this thermocompression bonding state, if the adhesive of the anisotropic conductor 400 is melted and one or more microcapsules 410 remain in each set of the extraction terminal 240 and the connection terminal 340, the metal of the microcapsule 410 The lead terminal 240 and the connection terminal 340 are electrically connected to each other through the film. When the thermocompression bonding is stopped, the adhesive is cured, and the TFT substrate 200 and the EL substrate 300 are bonded to each other in a state where the electrical connection between the extraction terminal 240 and the connection terminal 340 is maintained (FIG. 3). (See (b)).
[0041]
In the electro-optical device 100, when a current flows from the individual electrode 303 serving as the anode to the common electrode 323 serving as the cathode, the light emitting layer of the organic EL layer 313 emits light by the combination of holes and electrons serving as carriers. Of this light, the downward light in FIG. 3B passes through the transparent individual electrode 303 and the base material 301 as it is and is visually recognized by the observer. On the other hand, of the light emitted from the organic EL layer 313, the light upward in the drawing is reflected by the common electrode 323 having reflectivity, passes through the organic EL layer 313, the individual electrode 303, and the base material 301, and similarly. Visible to an observer. For this reason, the observer sees so much light. Furthermore, in this embodiment, since there is nothing interposed between the individual electrode 303 and the base material 301, the aperture ratio can be easily increased. In this way, combined with the light utilization efficiency and the high aperture ratio, the electro-optical device 100 enables bright display.
[0042]
Further, since the common electrode 323 can be made of a low-resistance conductor such as aluminum instead of a relatively high-resistance conductor such as ITO, the current flowing in the light emitting layer differs depending on the pixel position. Display unevenness due to this can be suppressed.
Furthermore, in the EL substrate 300, since the organic EL layer 313 is completely covered with the sealing layer 360, it is not necessary to perform subsequent steps, for example, a bonding step with the TFT substrate 200 in an inert environment. Deterioration due to moisture and the like is also prevented.
In addition, the organic EL layer 313 is covered with the sealing layer 360, and the connection terminal 340 also passes through the sealing layer 360 and the bank 305 and is connected to the individual electrode 303. No stress is applied directly to 313 when it is bonded to the TFT substrate 200. For this reason, the malfunction that the organic EL layer 313 (organic EL element 310) is destroyed at the time of bonding of substrates is also reduced.
[0043]
Second Embodiment
Next, a second embodiment of the present invention will be described. The second embodiment is that the contact hole 330 of the EL substrate 300 in the first embodiment is opened in two portions. For this reason, since the structure of the electro-optical device 100 is the same, the EL substrate manufacturing process will be described focusing on the differences.
FIG. 10 is a diagram illustrating a manufacturing process of the electro-optical device according to the second embodiment, and FIGS. 11 and 12 are partial cross-sectional views for explaining the manufacturing process of the EL substrate. Note that steps (2) to (8) in FIGS. 11 and 12 correspond to FIG. 10, respectively, and step (1) is the same as in the first embodiment, and is omitted. That is, it is the same as in the first embodiment in that the individual electrode 303 is formed by patterning a transparent conductor such as ITO into a rectangular shape on a transparent substrate 301 such as glass.
[0044]
Next, after applying, for example, a photosensitive acrylic resin or the like to the base material 301 on which the individual electrodes 303 are formed, the bank 305 is formed by patterning using a photolithography technique. At the time of patterning the bank 305, an opening 307 reaching the individual electrode 303 is also formed (see step (2) in FIGS. 10 and 11).
Here, the material constituting the bank 305 may be any material as long as it has durability against the solvent of the ink composition of the organic EL layer 313, but it can be subjected to water repellent treatment by fluorocarbon gas plasma treatment. In view of the above, organic materials such as the above-described photosensitive acrylic resin and photosensitive polyimide are preferable. Further, if the bank 305 is required to have characteristics such as color mixing between pixels and light leakage reduction, it is also preferable to color it in black. Note that the bank 305 is made of SiO from the viewpoint of improving adhesion.₂The point which is good also as a laminated structure which made inorganic materials, such as a lower layer, is the same as that of 1st Embodiment.
[0045]
Subsequently, a relatively low resistance conductor such as aluminum is formed as a conductive layer by sputtering or the like, and then patterned to fill the opening 307 as a conductive material 309 (steps in FIGS. 10 and 11). (See (3)).
Thereafter, similarly to the steps (3) to (5) in the first embodiment, the organic EL layer 313, the common electrode 323, and the sealing layer 360 are formed (steps (4) to FIG. 11 in FIG. 10 and FIG. 11). (See (6)).
Here, when the organic EL layer 313 is formed by the ink jet method, the ink composition is not separated from the bank 305 by using not only the hydrophilic treatment to the individual electrode 303 but also the water repellency treatment to the bank 305. It is formed uniformly on 303.
[0046]
Next, a contact hole 330 is formed, and in the second embodiment, only the sealing layer 360 is opened (see step (7) in FIGS. 10 and 12). Thereafter, a metal film such as aluminum is formed and patterned to form the connection terminal 340. Thereby, the connection terminal 340 is electrically connected to the individual electrode 303 through the conductive material 309 filled in the bank 305 (see step (8) in FIGS. 10 and 12).
Similarly to the first embodiment, the completed TFT substrate 200 and the EL substrate 300 are opposed to each other with the terminal formation surfaces facing each other, and the anisotropic conductor 400 is sandwiched between the two substrates. The two substrates are bonded together by thermocompression bonding in such a state that the 340s are aligned so as to face each other.
[0047]
In the second embodiment, similarly to the first embodiment, bright display is possible by improving the light utilization efficiency and the high aperture ratio, and reducing display unevenness by using a metal electrode as the common electrode 323. Alternatively, the sealing layer 360 can prevent deterioration and destruction of the organic EL layer. Furthermore, according to the second embodiment, compared with the first embodiment, the opening for connecting the connection terminal 340 to the individual electrode 303 is provided twice for each of the bank 305 and the sealing layer 360. Since the steps are performed separately, the depth required for one opening is reduced, and defects and defects such as chipping associated with opening and enlargement of the hole diameter due to the taper of the contact hole can be reduced.
[0048]
<Third Embodiment>
Next, a third embodiment of the present invention will be described. FIG. 13A and FIG. 13B are cross-sectional views illustrating the main configuration of the electro-optical device 100 according to the third embodiment. As shown in these drawings, in the third embodiment, the TFT substrate 200 has the same structure, and the TFT substrate 200 and the EL substrate 300 face each other with the terminal formation surfaces facing each other, and the terminals are electrically connected. However, in the first embodiment, the individual electrode 303, the organic EL layer 313, and the organic EL layer 313 are arranged in order from the base material 301 of the EL substrate 300. In contrast to the structure in which the common electrodes 323 are stacked, the third embodiment is different from the first embodiment in that the layers are stacked in the reverse order. That is, in the third embodiment, the common electrode 323, the organic EL layer 313, and the individual electrode 303 are stacked in order from the base material 301 of the EL substrate 300. Here, the individual electrode 303 provided for each pixel is electrically connected to the organic EL layer 313 corresponding to the pixel through a contact hole 330 (inside conductive portion) that opens only the sealing layer 360. Has been.
[0049]
In addition, although not particularly illustrated, the EL substrate 300 according to the third embodiment is manufactured by the following process. That is, after the common electrode 323 is formed with a transparent conductor on the surface of the base material 301, the bank 305 is formed, a light emitting layer is formed in a region partitioned by the bank 305, and a part of the bank 305 is formed. The individual electrodes 303 are formed of a reflective metal film so as to be positioned above, and the sealing layer 360 is formed so as to cover them. Then, a contact hole 330 is formed, a sealing layer 360 is opened, and an individual electrode located above the bank 305 is exposed. Thereafter, a metal film such as aluminum is formed and patterned to be connected. Terminal 340 is formed.
[0050]
In the third embodiment, as in the first and second embodiments, not only a bright display is possible by improving the light use efficiency and the high aperture ratio, but also the organic EL layer is deteriorated by the sealing layer 360. It is possible to prevent damage. Here, as described above, since the light emitted from the organic EL layer 313 is emitted downward through the substrate 301, in the third embodiment, the individual electrode 303 is required to have reflectivity. The common electrode 323 is required to have transparent conductivity. For this reason, in the third embodiment, ITO having a relatively high resistance must be used as the common electrode 323, which is slightly disadvantageous in that display unevenness is likely to occur compared to the first embodiment. is there.
However, in order to conduct electricity from the connection terminal 340 to the individual electrode 303, it is only necessary to open the sealing layer 360 only once. Therefore, the first embodiment in which the sealing layer 360 and the bank 305 are opened at once. Compared with the second embodiment in which the shape and the hole are divided into two times, it is advantageous.
In the third embodiment, the contact hole 330 is provided in the top portion of the bank 305, but may be anywhere as long as it is a portion connected to the individual electrode 303.
[0051]
<Application and deformation>
The present invention is not limited to the first, second, and third embodiments described above, and various applications and modifications are possible. For example, the processes and components in the first, second, and third embodiments may be described as follows.
[0052]
<Lamination>
In the above-described embodiment, the anisotropic conductor 400 is used to bond the TFT substrate 200 and the EL substrate 300 and to electrically connect the terminals. However, various other modes are assumed. The For example, a protruding electrode (bump) may be formed on one of the lead terminal 240 or the connection terminal 340 by using, for example, gold (Au), and the substrates may be bonded together with the electrical connection between the terminals by heat fusion.
[0053]
<Contact hole conduction>
In the embodiment described above, the conductive portion in the contact hole 330 is formed together with the connection terminal 340, but may be formed separately. In other words, after the conductive material is formed in the contact hole 330 by filling the conductive material, a metal film to be the connection terminal 340 may be formed and patterned to be electrically connected to the individual electrode 303.
[0054]
<Insulating layer planarization>
In the above-described embodiment, the surfaces of both the insulating layer 260 of the TFT substrate 200 and the sealing layer 360 of the EL substrate 300 are flattened, but only one of them may be flattened. For example, when the sealing layer 360 of the EL substrate 300 is not planarized, it is considered that the bank 305 portion is raised and the connection terminal 340 is formed at this raised portion. For this reason, since the connection terminal 340 having a raised portion is pressed against the flattened lead terminal 240, it is considered that the certainty of contact is increased. In addition, since only the raised portions are in contact, even when the terminals are slightly misaligned when the TFT substrate 200 and the EL substrate 300 are bonded together, there is little possibility of contact with the terminals of adjacent pixels.
However, since the contact area between the terminals is reduced, when the contact resistance cannot be ignored, it is desirable to flatten both and increase the facing area between the terminals as in the embodiment.
[0055]
<Pixel drive circuit>
In the above-described embodiment, the pixel circuit 110 including the pixel driving circuit 250 is configured as shown in FIG. 2, but the present invention is not limited to this, and pixel circuits having various configurations can be applied. For example, FIG. 14 is a diagram illustrating an example of a pixel circuit applicable to the present invention.
The pixel circuit 110 shown in FIG. 14 is different from the pixel circuit shown in FIG. 2 in that the connection around the gate of the TFT 212 is changed and the TFTs 216 and 218 and the light emission control line 208 are added. is there. Therefore, the following differences will be mainly described. First, the gate of the n-channel TFT 218 is connected to the i-th scanning line 202, and the drain thereof is connected to the gate of the TFT 212 and one end of the capacitor 220. The source of the TFT 212 is connected to the drain of the TFT 212. Therefore, the TFT 218 is turned on when the scanning signal Yi becomes the H level, and as a result of short-circuiting between the gate and the drain of the TFT 212, the TFT 212 functions as a diode.
Next, the n-channel TFT 216 is interposed between the drain of the TFT 212 and the anode of the organic EL element 310. Specifically, the gate of the TFT 216 is connected to the light emission control line 208, the drain thereof is connected to the drains of the TFTs 212 and 214, the source thereof is connected to the anode of the organic EL element 310, and the position in the i-th row. The light emission control line 208 is turned on / off according to the logic level of the signal Vgi.
[0056]
Here, the light emission control line 208 is provided in each row, and a signal Vgi obtained by inverting the logic level of the scanning signal Yi is supplied to the i-th light emission control line 208. Further, when the i-th scanning line 202 is selected, the current Iout corresponding to the luminance of the pixel in the i-th row and j-th column flows through the j-th data line 204. For this reason, when the pixel circuit shown in FIG. 14 is applied, the D / A converter provided for each data line 204 in the data line driving circuit 160 causes a constant current to flow a current Iout corresponding to the supplied digital data. Acts as a source 162.
In the pixel circuit 110 illustrated in FIG. 14, the TFTs 212, 214, 216, and 218 and the capacitor 220 are formed on the TFT substrate 200 as the pixel drive circuit 250.
[0057]
Next, the operation of the pixel circuit 110 illustrated in FIG. 14 will be described. First, when the scanning signal Yi becomes H level, the TFT 218 is turned on between the source and the drain, so that the TFT 212 functions as a diode. When the scanning signal Yi becomes the H level, the TFT 214 is also turned on similarly to the TFT 218, so that the current Iout flows through the path of the power supply line 209 → TFT212 → TFT214 → data line 204, and at this time, the TFT 212 The electric charge corresponding to the gate voltage is accumulated in the capacitor 220.
Subsequently, when the scanning signal Yi becomes the L level, the TFTs 214 and 218 are both turned off, but the charge accumulation state in the capacitor 220 does not change, so that the gate of the TFT 212 becomes the voltage when the current Iout flows. Will be retained.
When the scanning signal Yi becomes L level, the light emission control signal Vgi becomes H level and the TFT 216 is turned on. Therefore, a current corresponding to the gate voltage flows between the source and drain of the TFT 212. Specifically, this current flows through a path of the power supply line 209 → TFT 212 → TFT 216 → Organic EL element 310.
[0058]
At this time, the current flowing through the organic EL element 310 is determined by the gate voltage of the TFT 212, and the gate voltage is the capacitance element 220 when the scanning signal Yi becomes H level and the current Iout flows through the data line 204. Is the voltage held by. For this reason, when the light emission control signal Vgi becomes H level, the current that flows through the organic EL element 310 substantially matches the current Iout that flows immediately before, so that the organic EL element 310 has the light emission control signal Vgi at H level. As long as it is, light emission is continued at a luminance corresponding to the current value.
Therefore, even if the characteristics of the TFT 212 serving as the driving transistor vary over the entire pixel circuit 110, substantially the same current can be supplied to the organic EL elements 310 included in each pixel circuit 110. Therefore, display unevenness due to the variation can be suppressed.
[0059]
In the pixel circuit 110 shown in FIG. 14, it has been described that the current Iout corresponding to the digital value of the digital data is supplied to the data line 204 when the scanning line 202 is selected. The voltage may be applied to the data line 204.
In each of the pixel circuits 110 shown in FIGS. 2 and 14, the individual electrode 303 provided for each pixel is the anode of the organic EL element 310, and the common electrode 323 common to the pixels is the organic EL element 310. It was a cathode.
Here, from the viewpoint of simplifying the doping process by unifying the channel types of a plurality of TFTs, a configuration in which the TFT 212 is an n-channel type as shown in FIG. 15 is also conceivable. In this configuration, as can be seen in the figure, the individual electrode provided for each pixel is the cathode of the organic EL element 310, and the common electrode common to the pixels is the anode of the organic EL element 310.
That is, the individual electrode in the present invention may be an anode as in the pixel circuit shown in FIGS. 2 and 14 depending on the channel type of the driving transistor that drives the organic EL element 310, and is shown in FIG. In some cases, the pixel circuit becomes a cathode as in the case of a pixel circuit. On the contrary, the common electrode in the present invention may be a cathode as shown in FIGS. 2 and 14, or may be an anode as shown in FIG.
[0060]
<Silicon substrate, etc.>
In the EL substrate 300, the base material 301 that transmits light emitted from the light emitting layer is required to be transparent, but the base material 201 of the TFT substrate 200 is not required to be transparent. For this reason, a substrate that does not have transparency, such as a silicon substrate, can be used as the base material 201. When a silicon substrate is used in this manner, a MOS (Metal Oxide Semiconductor) transistor can be used as a transistor instead of a TFT, so that high-speed operation is possible and not only advantageous for high-resolution display but also scanning. Peripheral circuits such as the line drive circuit 140 and the data line drive circuit 160 can be easily integrated and integrated.
Further, by applying SOI (Silicon On Insulator) technology, a silicon single crystal film may be formed on an insulating substrate such as sapphire, quartz, or glass, and various active elements may be formed therein.
[0061]
<Color display, etc.>
In addition to a single color pixel, the light emitting layer is selected so that each of the three pixels is colored with R (red), G (green), and B (blue). Color display may be performed with one dot.
On the other hand, instead of the organic EL element 310, another light emitting element such as an LED may be used. That is, the present invention is applicable if the light-emitting element is configured to sandwich the light-emitting layer between the individual electrode for each pixel and the common electrode common to the pixels.
[0062]
<Electronic equipment>
Next, an example in which the display system 10 described above is incorporated in a specific electronic device will be described. FIG. 16 is a block diagram showing an electrical configuration of a mobile personal computer assumed as an example of an electronic device, and FIG. 17 is a perspective view showing a configuration of this personal computer.
As shown in FIG. 17, the personal computer 2100 includes a main body 2104 having a keyboard 2102 and an electro-optical device 100 as a display unit. In FIG. 16, the CPU 20 controls each unit via the bus 21. The ROM 22 stores a basic entry / exit control program (BIOS) and the like, and the RAM 24 is used as a work area of the CPU 20. An HDD (Hard Disk Drive) 26 stores an operation system and various application programs. The operation unit 28 detects the operation state of the keyboard 2102 and outputs a signal indicating the operation content to the CPU 20.
In the personal computer 2100, the CPU 20 generates digital data Dmem in accordance with the operation state of the keyboard 2102, execution of application programs, and the like, and rewrites the stored contents of the image memory 130 in the display system 10. Accordingly, the organic EL element 310 in each pixel of the electro-optical device 100 emits light with the brightness defined by the digital data stored in the corresponding storage area in the image memory 130, thereby displaying an image. .
[0063]
Electronic devices to which the electro-optical device 100 is applied include a mobile phone, a digital still camera, a digital television, a viewfinder type or a monitor direct view type video tape in addition to the personal computer shown in FIGS. Examples include a recorder, a car navigation device, a pager, an electronic notebook, a calculator, a word processor, a workstation, a videophone, a POS terminal, and a device equipped with a touch panel. Needless to say, the electro-optical device 100 described above can be applied as a display unit of these various electronic devices.
[0064]
  As described above, the substrate on which the light emitting element is formed and the light emitting element for driving the light emitting element.activeWhen the substrate on which the element is formed is bonded, it is possible to suppress deterioration and destruction of the light emitting element.
[Brief description of the drawings]
FIG. 1 is a diagram illustrating a system configuration including an electro-optical device according to an embodiment.
FIG. 2 is a circuit diagram illustrating a configuration of a pixel circuit in the electro-optical device.
FIG. 3 is a cross-sectional view illustrating a main configuration of the electro-optical device.
FIG. 4 is a plan view showing a configuration of a TFT substrate in the electro-optical device.
FIG. 5 is a view showing a connection surface of the TFT substrate.
FIG. 6 is a view showing a connection surface on an EL substrate of the electro-optical device.
FIG. 7 is a manufacturing process diagram of the same electro-optical device.
FIG. 8 is a diagram showing the manufacturing process.
FIG. 9 is a diagram showing the manufacturing process.
FIG. 10 is another manufacturing process diagram.
FIG. 11 is a diagram showing the manufacturing process.
FIG. 12 is a diagram showing the manufacturing process.
FIG. 13 is a cross-sectional view showing another configuration of the electro-optical device.
FIG. 14 is a circuit diagram showing another configuration of the pixel circuit.
FIG. 15 is a circuit diagram showing another configuration of the pixel circuit.
FIG. 16 is a diagram showing a configuration of a personal computer using the same electro-optical device.
FIG. 17 is a diagram showing a configuration of a personal computer using the same electro-optical device.
[Explanation of symbols]
DESCRIPTION OF SYMBOLS 100 ... Electro-optical device, 200 ... TFT substrate (2nd substrate), 202 ... Scanning line, 204 ... Data line, 209 ... Power supply line, 212 ... TFT (driving transistor), 214 ... TFT (switching transistor), 220 ... Capacitance Elements 240, extraction terminal (second connection terminal), 250 pixel drive circuit (drive circuit), 300 EL substrate (first substrate), 301 substrate, 303 individual electrode, 305 bank (partition) 307: Opening portion, 309 ... Conductive material, 310 ... Organic EL element, 313 ... Organic EL layer, 323 ... Common electrode, 325 ... Opening, 330 ... Contact hole, 340 ... Connection terminal (first connection terminal) 360 ... sealing layer, 400 ... anisotropic conductor, 410 ... microcapsule, 2100 ... personal computer

Claims (13)

An electro-optical device having a first substrate and a second substrate,
The first substrate is
A substrate having transparency;
A plurality of individual electrodes formed on the substrate;
A partition wall formed in a lattice shape when a portion of the plurality of individual electrodes that swells in a direction opposite to the observation side so as to straddle the gap between the plurality of individual electrodes is viewed in plan view of the substrate. ,
A light emitting layer formed in a region partitioned by the partition;
A common electrode formed to cover the light emitting layer;
A sealing layer covering the partition and the common electrode;
A first connection terminal that is provided opposite to the individual electrode with the sealing layer interposed therebetween, and that is electrically connected to the individual electrode through a conductive portion that penetrates the partition wall and the sealing layer;
A light emitting element is formed by stacking the individual electrode, the light emitting layer, and the common electrode,
The common electrode is common to a plurality of light emitting elements, and is formed to avoid a region where penetration of the sealing layer is planned,
The second substrate is
A drive circuit for driving each of the plurality of light emitting elements;
A second connection terminal provided corresponding to the first connection terminal, for connecting the drive circuit and the plurality of light emitting elements;
An electro-optical device arranged such that the first connection terminal provided on the first substrate and the second connection terminal provided on the second substrate are electrically connected. The electro-optical device according to claim 1, wherein the individual electrode has transparency, and the common electrode has reflectivity. The light emitting layer includes an organic electroluminescence layer,
The electro-optical device according to claim 1, wherein the light emitting element is an organic EL element in which one of the individual electrode and the common electrode is a cathode and the other is an anode. The second substrate has a plurality of scanning lines and a plurality of data lines intersecting each other,
The drive circuit is provided corresponding to an intersection of the plurality of scanning lines and the plurality of data lines,
A switching transistor that is turned on when a scanning line corresponding to the intersection is selected;
When the switching transistor is turned on, a capacitive element that accumulates electric charge according to an electric signal on the data line corresponding to the intersection,
2. The electro-optical device according to claim 1, further comprising: a driving transistor whose one terminal is electrically connected to the second connection terminal and whose operation state is determined according to the electric charge stored in the capacitor. apparatus. The electro-optical device according to claim 1, wherein the drive circuit includes a thin film transistor. Electronic apparatus comprising the electro-optical device according to any one of claims 1 to 5. A base that has transparency, a plurality of individual electrodes formed on the base, and a portion that swells in a direction opposite to the observation side with respect to the plurality of individual electrodes so as to straddle a gap between the plurality of individual electrodes Partition walls formed in a lattice shape when the substrate is viewed in plan, a light emitting layer formed in a region partitioned by the partition, and a common electrode formed to cover the light emitting layer A sealing layer that covers the partition wall and the common electrode, and is provided to face the individual electrode across the sealing layer, and is connected to the individual electrode through a conductive portion that penetrates the partition wall and the sealing layer. A mating substrate having a first connection terminal that conducts, wherein a light emitting element is formed by stacking the individual electrode, the light emitting layer, and the common electrode, and the common electrode is connected to a plurality of light emitting elements. Common and planned to penetrate the sealing layer Wherein is veneered with the counterpart substrate is formed to avoid the area that is,
A drive circuit for driving each of the plurality of light emitting elements;
A second connection terminal provided so as to be connectable to the first connection terminal, and electrically connecting the drive circuit and the plurality of light emitting elements;
Configure an electro-optical device by bonding with the counterpart substrate ,
The electro-optical device substrate, wherein the second connection terminals are respectively connected to the first connection terminals by the bonding. An electro-optical device substrate that constitutes an electro-optical device by bonding with a counterpart substrate,
A substrate having transparency;
A plurality of individual electrodes formed on the substrate;
Partition walls formed in a lattice shape when viewed from above the base material in a direction opposite to the observation side with respect to the plurality of individual electrodes so as to straddle the gap between the plurality of individual electrodes,
A light emitting layer formed in a region partitioned by the partition;
A common electrode formed to cover the light emitting layer;
A sealing layer covering the partition and the common electrode;
A first connection terminal that is provided opposite to the individual electrode with the sealing layer interposed therebetween, and that is electrically connected to the individual electrode through a conductive portion that penetrates the partition wall and the sealing layer;
A light emitting element is formed by stacking the individual electrode, the light emitting layer, and the common electrode,
The common electrode is common to a plurality of light emitting elements, and is formed to avoid a region where penetration of the sealing layer is planned,
The counterpart substrate is
A drive circuit for driving each of the plurality of light emitting elements;
A second connection terminal provided so as to be connectable to the first connection terminal, and electrically connecting the drive circuit and the plurality of light emitting elements;
The electro-optical device substrate, wherein the first connection terminal is connected to the second connection terminal by the bonding. To a transparent substrate,
Forming a plurality of individual electrodes;
A partition wall so that a portion that bulges in the direction opposite to the observation side with respect to the plurality of individual electrodes so as to straddle the gaps between the plurality of individual electrodes becomes a lattice shape when the substrate is viewed in plan view Forming a step;
Forming a light emitting layer in a region partitioned by the partition;
Forming a common electrode so as to cover the light emitting layer;
Forming a sealing layer covering the partition and the common electrode;
A step of forming a first connection terminal that conducts to the individual electrode through a conductive portion that penetrates the partition and the sealing layer, and the common electrode is scheduled to penetrate the sealing layer. While avoiding the planned area,
In a base material different from the base material having transparency,
Forming a driving circuit for driving each of the plurality of light emitting elements;
Forming a second connection terminal for connecting the drive circuit and the plurality of light emitting elements corresponding to the first connection terminal; and
A method for manufacturing an electro-optical device, comprising: electrically connecting the first connection terminal and the second connection terminal. The step of forming the first connection terminal includes:
The method of manufacturing an electro-optical device according to claim 9 , comprising a step of opening the partition wall and the sealing layer in the predetermined region to expose a part of the individual electrode. The step of forming the partition includes
Forming the partition so as to have a plurality of apertures respectively reaching the plurality of individual electrodes;
Providing a conductive material to the plurality of apertures,
In the step of forming the common electrode, the common electrode is formed so as not to contact the conductive material,
The step of forming the first connection terminal includes:
The method for manufacturing an electro-optical device according to claim 9 , comprising a step of opening the sealing layer in the predetermined region to expose a part of the conductive material. The step of electrically connecting the first connection terminal and the second connection terminal is a step of applying an anisotropic conductive material between the first connection terminal and the second connection terminal. A method for manufacturing an electro-optical device according to claim 9 . The method of manufacturing an electro-optical device according to claim 9 , wherein the step of forming the light emitting layer includes a step of applying a liquefied light emitting material to a region partitioned by the partition wall.

Images