JP4509826B2 - Inductor - Google Patents

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JP4509826B2
JP4509826B2 JP2005058727A JP2005058727A JP4509826B2 JP 4509826 B2 JP4509826 B2 JP 4509826B2 JP 2005058727 A JP2005058727 A JP 2005058727A JP 2005058727 A JP2005058727 A JP 2005058727A JP 4509826 B2 JP4509826 B2 JP 4509826B2
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transmission line
layer
semiconductor substrate
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connected
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JP2006245273A (en
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匡夫 中川
貴奈 加保
陽 山口
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日本電信電話株式会社
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Description

  The present invention relates to an inductor.

  20 and 21 show an example of a conventional inductor.

  In FIG. 20, the inductor is constituted by transmission lines 191, 192, 193, 194, the transmission lines 191 and 193 are spiral, and the transmission line 192 is connected in series between the connection points con1 and con3. is doing. The end of the transmission line 193 opposite to the connection point con3 is connected to the transmission line 194 at the connection point con2. An insulating layer is interposed between the transmission lines 191 and 192 and between the transmission lines 193 and 194. Further, the capacitor 195 is connected to the inductor at the connection point con3.

  In FIG. 21, a meander-shaped transmission line 201 is connected to a capacitor 202 at a connection point con1.

  An equivalent circuit of a combination of the above inductor and capacitor is the same as that shown in FIG. 2, and is widely known as a T-type circuit including an inductor and a capacitor. If the terminal of the capacitor that is not connected to the inductor is connected to the ground, it can be used as a low-pass filter (see p. 191 (c) of Non-Patent Document 1 below). It is also widely used as a low-pass type matching circuit.

Translated by Yasuo Kato, Arthur B. Williams "Electronic Filter 3rd Edition" Published by Magrow Hill Publishing Co., Ltd. 1990.4.25

  However, as can be seen from FIG. 20 and FIG. 21, the configuration of the T-type circuit requires two large-sized inductors, and thus has a problem of occupying a large area on an expensive semiconductor substrate. It was.

  The present invention has been made in view of the above problems, and a problem to be solved by the present invention is to provide an inductor having a small area as compared with the prior art.

In order to solve the above problems , in the present invention, as described in claim 1 ,
An inductor formed on a semiconductor substrate, the first transmission line formed in the first layer on the semiconductor substrate, and the second layer formed in the second layer overlapping the first layer Two transmission lines, and a third transmission line formed in a third layer overlapping the second layer on the opposite side of the first layer, and the first transmission line The third transmission line has an overlapping portion along the first and third transmission lines when viewed from a direction perpendicular to the substrate surface of the semiconductor substrate. The output part is connected to the input part of the second transmission line via a connection part, and the first output part of the second transmission line is connected to the input part of the third transmission line via a connection part And a second output portion of the second transmission line is connected to one terminal of a capacitor formed on the semiconductor substrate. That.

In the present invention, as described in claim 2 ,
An inductor formed on a semiconductor substrate, the first transmission line formed in the first layer on the semiconductor substrate, and the second layer formed in the second layer overlapping the first layer Two transmission lines and a third transmission line, and a fourth transmission line formed in a third layer overlapping the second layer opposite to the first layer, The first transmission line and the fourth transmission line have overlapping portions along the first and fourth transmission lines when viewed from a direction perpendicular to the substrate surface of the semiconductor substrate, The output part of the first transmission line is connected to the input part of the second transmission line via a connection part, and the output part of the second transmission line is the first of the capacitor formed on the semiconductor substrate. A second terminal of the capacitor is connected to an input of the third transmission line, and an output of the third transmission line is connected to the fourth transmission line. Constituting the inductor, characterized in that connected through the connecting portion to the input portion of the.

In the present invention, as described in claim 3 ,
An inductor formed on a semiconductor substrate, the first transmission line formed in the first layer on the semiconductor substrate, and the second layer formed in the second layer overlapping the first layer Two transmission lines, and a third transmission line formed in a third layer overlapping the second layer on the opposite side of the first layer, and the first transmission line The third transmission line has an overlapping portion along the first and third transmission lines when viewed from a direction perpendicular to the substrate surface of the semiconductor substrate. The output part is connected to the input part of the second transmission line via a connection part, and the output part of the second transmission line is connected to a first terminal of a capacitor formed on the semiconductor substrate, The second terminal of the capacitor constitutes an inductor that is connected to the input portion of the third transmission line.

In the present invention, as described in claim 4 ,
An inductor formed on a semiconductor substrate, the first transmission line formed in the first layer on the semiconductor substrate, and the second layer formed in the second layer overlapping the first layer Two transmission lines, and a third transmission line formed in a third layer overlapping the second layer on the opposite side of the first layer, and the first transmission line The third transmission line has an overlapping portion along the first and third transmission lines when viewed from a direction perpendicular to the substrate surface of the semiconductor substrate. The output unit is connected to the input unit of the second transmission line via a connection unit, and the output unit of the second transmission line is connected to the input unit of the third transmission line via the connection unit. Configure the featured inductor.

In the present invention, as described in claim 5 ,
An inductor formed on a semiconductor substrate, the first transmission line formed in the first layer on the semiconductor substrate, and the second layer formed in the second layer overlapping the first layer A second transmission line, a third transmission line formed in a third layer overlapping the second layer on the opposite side of the first layer, and a second transmission line formed in the second layer. 4 transmission lines, a fifth transmission line formed in the first layer, a sixth transmission line formed in the second layer, and a third transmission line formed in the third layer. A seventh transmission line as a constituent element, and the first transmission line and the second transmission line are the first and second transmission lines when viewed from a direction perpendicular to the substrate surface of the semiconductor substrate. The first transmission line and the third transmission line have an overlapping portion along the transmission line, and the first transmission line and the third transmission line are viewed from a direction perpendicular to the substrate surface of the semiconductor substrate. transmission The third transmission line and the fourth transmission line have overlapping portions along a path, and the third transmission line and the fourth transmission line are viewed from a direction perpendicular to the substrate surface of the semiconductor substrate. The third transmission line and the fifth transmission line have an overlapping portion along the line, and the third transmission line and the fifth transmission line are viewed from a direction perpendicular to the substrate surface of the semiconductor substrate. The fifth transmission line and the sixth transmission line have overlapping portions along the line, and the fifth transmission line and the sixth transmission line are viewed from a direction perpendicular to the substrate surface of the semiconductor substrate. The fifth transmission line and the seventh transmission line have an overlapping portion along the line, and the fifth transmission line and the seventh transmission line are viewed from a direction perpendicular to the substrate surface of the semiconductor substrate. And an output portion of the first transmission line is connected to an input portion of the second transmission line via a connection portion, and the second transmission line is connected to the input portion of the second transmission line. The output part of the line is connected to the input part of the third transmission line via a connection part, and the output part of the third transmission line is connected to the input part of the fourth transmission line via a connection part. The output part of the fourth transmission line is connected to the input part of the fifth transmission line via a connection part, and the output part of the fifth transmission line is connected to the input part of the sixth transmission line. And an output part of the sixth transmission line is connected to an input part of the seventh transmission line via a connection part.

In the present invention, as described in claim 6 ,
An inductor formed on a semiconductor substrate, the first transmission line formed in the first layer on the semiconductor substrate, and the second layer formed in the second layer overlapping the first layer Two transmission lines, and a third transmission line formed in a third layer overlapping the second layer on the opposite side of the first layer, and the first transmission line The second transmission line has an overlapping portion along the first and second transmission lines when viewed from a direction perpendicular to the substrate surface of the semiconductor substrate. The third transmission line has an overlapping portion along the first and third transmission lines when viewed from a direction perpendicular to the substrate surface of the semiconductor substrate. The output unit constitutes an inductor that is connected to the input unit of the second transmission line and the input unit of the third transmission line via a connection unit.

In the present invention, as described in claim 7 ,
An inductor formed on a semiconductor substrate, the first transmission line formed in the first layer on the semiconductor substrate, and the second layer formed in the second layer overlapping the first layer Two transmission lines, and a third transmission line formed in a third layer overlapping the second layer on the opposite side of the first layer, and the first transmission line The third transmission line has an overlapping portion along the first and third transmission lines when viewed from a direction perpendicular to the substrate surface of the semiconductor substrate. The first output section is connected to the input section of the second transmission line via a connection section, and the output section of the second transmission line is connected to the input section of the third transmission line via a connection section. And a second output portion of the first transmission line is connected to one terminal of a capacitor formed on the semiconductor substrate. That.

In the present invention, as described in claim 8 ,
An inductor formed on a semiconductor substrate, the first transmission line formed in the first layer on the semiconductor substrate, and the second layer formed in the second layer overlapping the first layer Two transmission lines, a third transmission line formed in a third layer overlapping the second layer on the opposite side of the first layer, and the second layer of the third layer And a fourth transmission line formed in a fourth layer overlapping the opposite side of the first transmission line, and the first transmission line and the third transmission line are perpendicular to the substrate surface of the semiconductor substrate. When viewed from one direction, the first and third transmission lines have overlapping portions, and the second transmission line and the fourth transmission line are perpendicular to the substrate surface of the semiconductor substrate. When viewed from a different direction, the second transmission line has an overlapping portion along the second and fourth transmission lines, and the output part of the first transmission line is connected to the input part of the second transmission line. The output section of the second transmission line is connected to the input section of the third transmission line via the connection section, and the output section of the third transmission line is connected to the input section of the fourth transmission line. An inductor is characterized in that it is connected to the input section through a connection section.

In the present invention, as described in claim 9 ,
At least two of the transmission lines have overlapping portions along the two transmission lines when viewed from a direction perpendicular to the substrate surface of the semiconductor substrate, and the two transmission lines are both spiral-shaped. having or constitute an inductor according to any one of claims 1 to 8, characterized in that both have a meandering shape.

  By implementing the present invention, it is possible to provide an inductor having a small area as compared with the prior art.

  In an embodiment of the present invention, a first transmission line formed in a first layer on a semiconductor substrate and a second transmission formed in a second layer different from the first layer. The first transmission line and the second transmission line are along the first and second transmission lines when viewed from a direction perpendicular to the substrate surface of the semiconductor substrate. The first transmission line and the second transmission line are connected directly or via another circuit to form an inductor.

  Hereinafter, the best mode for carrying out the present invention will be described in detail by way of examples.

Example 1
FIG. 1 is a diagram for explaining a first embodiment of the present invention. In this embodiment, a transmission line (referred to as a first layer transmission line, hereinafter the same) 11 and a second layer transmission line 12 are formed on a semiconductor substrate (not shown) and formed in the first layer. The third-layer transmission line 13 is a constituent element. Here, the above layers are overlapped in order of the third layer (referred to as the third layer, hereinafter the same), the second layer, and the first layer from the side close to the semiconductor substrate. However, this order may be reversed, that is, the order of the first layer, the second layer, and the third layer from the side closer to the semiconductor substrate.

  FIG. 1A is a plan view of the configuration of this embodiment as viewed from a direction perpendicular to the substrate surface of the semiconductor substrate. The transmission line 11 and the transmission line 13 are perpendicular to the substrate surface of the semiconductor substrate. When viewed from various directions, it has an elongated overlapping portion along the transmission line. In FIG. 1 (a), each transmission line is shown in a shifted position so that its location is clear, but the lower transmission line is hidden under the upper transmission line. They may overlap so that they end up. Since there is the above overlapping portion, the area occupied by the inductor is reduced as compared with the case where the equivalent inductor is formed of a single-layer transmission line, and the effect of the present invention appears.

  FIG. 1B is a diagram in which the transmission lines of each layer are separately displayed, and the connections between the transmission lines are represented by broken lines. The transmission lines can be connected to each other through a connection portion that is a conductor in a via hole provided in an insulating layer between the layers. The positions of such connection points are indicated by con1 to con4 in FIG. 1A, including the positions of connection points that do not use via holes. The output part of the transmission line 11 is connected to the input part of the transmission line 12 at the connection point con1, the first output part of the transmission line 12 is connected to the input part of the transmission line 13 at the connection point con2, and the first part of the transmission line 12 is connected. The output part 2 is connected to one terminal of the capacitor 15 formed on the semiconductor substrate at the connection point con4. The output part of the transmission line 13 is connected to the input part of the transmission line 14 of the fourth layer closer to (or farther from) the semiconductor substrate than the third layer at the connection point con3.

  The transmission line 11 and the transmission line 13 have a spiral shape, function as inductors, the two inductors are connected in series, and a capacitor 15 is connected to the connection point. The T-type circuit shown in FIG. Is forming. The signal is input from the input section of the transmission line 11 and output from the output section of the transmission line 14.

  A ground plane 16 is provided around the T-type circuit.

In this embodiment, the transmission lines 11 and 13, respectively, are the equivalent to the first and third transmission line of claim 1.

(Example 2)
FIG. 3 is a diagram for explaining a second embodiment of the present invention. This embodiment is configured on a semiconductor substrate (not shown), and includes a first layer transmission line 31, a second layer transmission lines 32 and 33, and a third layer transmission line. Here, the above-described layers overlap in order of the third layer, the second layer, and the first layer from the side close to the semiconductor substrate. However, this order may be reversed, that is, the order of the first layer, the second layer, and the third layer from the side closer to the semiconductor substrate.

  FIG. 3A is a plan view of the configuration of this embodiment viewed from a direction perpendicular to the substrate surface of the semiconductor substrate. The transmission line 31 and the transmission line 34 are perpendicular to the substrate surface of the semiconductor substrate. When viewed from various directions, it has an elongated overlapping portion along the transmission line. In FIG. 3 (a), each transmission line is shown in a shifted position so that its location is clear, but the lower transmission line is hidden under the upper transmission line. They may overlap so that they end up. Since there is the above overlapping portion, the area occupied by the inductor is reduced as compared with the case where the equivalent inductor is formed of a single-layer transmission line, and the effect of the present invention appears.

  FIG. 3B is a diagram in which the transmission lines of each layer are displayed separately, and the connections between the transmission lines are represented by broken lines. The transmission lines can be connected to each other through a connection portion that is a conductor in a via hole provided in an insulating layer between the layers. The positions of such connection points are indicated by con1 to con5 in FIG. 3A including the positions of connection points that do not use via holes. The output part of the transmission line 31 is connected to the input part of the transmission line 32 at the connection point con1, and the output part of the transmission line 32 is connected to the first terminal of the capacitor 36 at the connection point con4 and formed on the semiconductor substrate. The second terminal of the capacitor 36 is connected to the input part of the transmission line 33 at con5, and the output part of the transmission line 33 is connected to the input part of the transmission line 34 at the connection point con2. The output part of the transmission line 34 is connected to the input part of the transmission line 35 of the fourth layer closer to (or farther from) the semiconductor substrate than the third layer at the connection point con3.

  The transmission line 31 and the transmission line 34 have a spiral shape, function as inductors, and the two inductors are connected in series via a capacitor 36 to form the circuit shown in FIG. The signal is input from the input part of the transmission line 31 and output from the output part of the transmission line 35.

  A ground plane 37 is provided around the circuit.

In the present embodiment, the transmission lines 31 and 34 correspond to the first and fourth transmission lines according to claim 2 , respectively, and the transmission line 32, the capacitor 36 and the transmission line 33 are described in claim 2 . 2 transmission lines, a capacitor, and a third transmission line .

  Even if the transmission line 33 is omitted and the second terminal of the capacitor 36 is connected to the input portion of the transmission line 34, the same effect as in the present embodiment can be obtained.

(Example 3)
FIG. 5 is a diagram for explaining a third embodiment of the present invention. This embodiment is configured on a semiconductor substrate (not shown), and includes a first layer transmission line 51, a second layer transmission line 52, and a third layer transmission line 53 as constituent elements. Here, the above-described layers overlap in order of the third layer, the second layer, and the first layer from the side close to the semiconductor substrate. However, this order may be reversed, that is, the order of the first layer, the second layer, and the third layer from the side closer to the semiconductor substrate.

  FIG. 5A is a plan view of the configuration of the present embodiment viewed from a direction perpendicular to the substrate surface of the semiconductor substrate. The transmission line 51 and the transmission line 52 are perpendicular to the substrate surface of the semiconductor substrate. When viewed from one direction, the transmission line has an elongated overlapping portion along the transmission line, and the transmission line 51 and the transmission line 53 have the transmission line when viewed from a direction perpendicular to the substrate surface of the semiconductor substrate. An elongated overlapping portion is formed along the track. In FIG. 5 (a), each transmission line is shown in a shifted position so that its location is clear, but the lower transmission line is hidden under the upper transmission line. They may overlap so that they end up. Since there is the above overlapping portion, the area occupied by the inductor is reduced as compared with the case where the equivalent inductor is formed of a single-layer transmission line, and the effect of the present invention appears.

  The difference of the present embodiment from the first embodiment is that the transmission line 52 also has a spiral shape and has a higher inductance than the first embodiment in the same exclusive area.

  FIG. 5B is a diagram in which the transmission lines of each layer are displayed separately, and the connections between the transmission lines are represented by broken lines. The transmission lines can be connected to each other through a connection portion that is a conductor in a via hole provided in an insulating layer between the layers. The positions of such connection points are indicated by con1 to con4 in FIG. 5A, including the positions of connection points that do not use via holes. The output part of the transmission line 51 is connected to the input part of the transmission line 52 at the connection point con1, the first output part of the transmission line 52 is connected to the input part of the transmission line 53 at the connection point con2, and the first part of the transmission line 52 is connected. The output part 2 is connected to one terminal of a capacitor 55 formed on the semiconductor substrate at a connection point con4. The output part of the transmission line 53 is connected to the input part of the transmission line 54 of the fourth layer closer to (or farther from) the semiconductor substrate than the third layer at the connection point con3.

  The transmission line 51, the transmission line 52, and the transmission line 53 have a spiral shape, function as inductors, the two inductors are connected in series, and a capacitor 55 is connected to the connection point. The T type shown in FIG. A circuit is formed. The signal is input from the input unit of the transmission line 51 and output from the output unit of the transmission line 54.

  A ground plane 56 is provided around this circuit.

Example 4
FIG. 7 is a diagram for explaining a fourth embodiment of the present invention. This embodiment is configured on a semiconductor substrate (not shown), and includes a first-layer transmission line 71, a second-layer transmission line 72, and a third-layer transmission line 73 as constituent elements. Here, the above-described layers overlap in order of the third layer, the second layer, and the first layer from the side close to the semiconductor substrate. However, this order may be reversed, that is, the order of the first layer, the second layer, and the third layer from the side closer to the semiconductor substrate.

  FIG. 7A is a plan view of the configuration of the present embodiment viewed from a direction perpendicular to the substrate surface of the semiconductor substrate. The transmission line 71 and the transmission line 73 are perpendicular to the substrate surface of the semiconductor substrate. When viewed from various directions, it has an elongated overlapping portion along the transmission line. In FIG. 7 (a), each transmission line is shown in a shifted position so that its location is clear, but the lower transmission line is hidden under the upper transmission line. They may overlap so that they end up. Since there is the above overlapping portion, the area occupied by the inductor is reduced as compared with the case where the equivalent inductor is formed of a single-layer transmission line, and the effect of the present invention appears.

  FIG. 7B is a diagram in which the transmission lines of each layer are displayed separately, and the connections between the transmission lines are represented by broken lines. The transmission lines can be connected to each other through a connection portion that is a conductor in a via hole provided in an insulating layer between the layers. The positions of such connection points are indicated by con1 to con3 in FIG. The output part of the transmission line 71 is connected to the input part of the transmission line 72 at the connection point con1, and the output part of the transmission line 72 is connected to the input part of the transmission line 73 at the connection point con2. The output part of the transmission line 73 is connected to the input part of the transmission line 74 of the fourth layer closer to (or farther from) the semiconductor substrate than the third layer at the connection point con3.

  This embodiment is different from the first embodiment in that the capacitor 15 is not an element for circuit configuration.

  The transmission line 71 and the transmission line 73 have a spiral shape, function as inductors, and the two inductors are connected in series to form one inductor. The signal is input from the input part of the transmission line 71 and output from the output part of the transmission line 74.

  A ground plane 75 is provided around the inductor.

(Example 5)
FIG. 8 is a diagram for explaining a fifth embodiment of the present invention. This embodiment is configured on a semiconductor substrate (not shown), and includes a first layer transmission line 81, a second layer transmission line 82, and a third layer transmission line 83 as constituent elements. Here, the above-described layers overlap in order of the third layer, the second layer, and the first layer from the side close to the semiconductor substrate. However, this order may be reversed, that is, the order of the first layer, the second layer, and the third layer from the side closer to the semiconductor substrate.

  FIG. 8A is a plan view of the configuration of this embodiment viewed from a direction perpendicular to the substrate surface of the semiconductor substrate. The transmission line 81 and the transmission line 82 are perpendicular to the substrate surface of the semiconductor substrate. When viewed from one direction, the transmission line has an elongated overlapping portion along the transmission line, and the transmission line 81 and the transmission line 83 have the transmission line when viewed from a direction perpendicular to the substrate surface of the semiconductor substrate. An elongated overlapping portion is formed along the track. In FIG. 8 (a), each transmission line is shown in a shifted position so that its location is clear, but the lower transmission line is hidden under the upper transmission line. They may overlap so that they end up. Since there is the above overlapping portion, the area occupied by the inductor is reduced as compared with the case where the equivalent inductor is formed of a single-layer transmission line, and the effect of the present invention appears.

  The difference of the present embodiment from the fourth embodiment is that the transmission line 82 also has a spiral shape and has a higher inductance than the fourth embodiment in the same exclusive area.

  FIG. 8B is a diagram in which the transmission lines of each layer are separately displayed, and the connections between the transmission lines are represented by broken lines. Transmission lines can be connected through via holes provided in an insulating layer between layers. The position of such a connection point is indicated by con1 to con3 in FIG. The output part of the transmission line 81 is connected to the input part of the transmission line 82 at the connection point con1, and the output part of the transmission line 82 is connected to the input part of the transmission line 83 at the connection point con2. The output part of the transmission line 83 is connected to the input part of the transmission line 84 of the fourth layer closer to (or farther from) the semiconductor substrate than the third layer at the connection point con3.

  The present embodiment is different from the third embodiment in that the capacitor 55 is not an element for circuit configuration.

  The transmission line 81, the transmission line 82, and the transmission line 83 have a spiral shape and function as inductors, and these two inductors are connected in series to form one inductor. The signal is input from the input part of the transmission line 81 and output from the output part of the transmission line 84.

  A ground plane 85 is provided around the inductor.

(Example 6)
FIG. 9 is a diagram for explaining a sixth embodiment of the present invention. This embodiment is configured on a semiconductor substrate (not shown), and includes first-layer transmission lines 91 and 95, second-layer transmission lines 92, 94 and 96, and third-layer transmission lines 93 and 97. As an element. Here, the above-described layers overlap in order of the third layer, the second layer, and the first layer from the side close to the semiconductor substrate. However, this order may be reversed, that is, the order of the first layer, the second layer, and the third layer from the side closer to the semiconductor substrate.

  FIG. 9A is a plan view of the configuration of this embodiment viewed from a direction perpendicular to the substrate surface of the semiconductor substrate. The transmission line 91 and the transmission line 92 are perpendicular to the substrate surface of the semiconductor substrate. When viewed from a certain direction, the transmission line 91 has an elongated overlapping portion along the transmission line, and the transmission line 91 and the transmission line 93 have the transmission line when viewed from a direction perpendicular to the substrate surface of the semiconductor substrate. The transmission line 93 and the transmission line 94 have an elongated overlapping portion along the transmission line when viewed from a direction perpendicular to the substrate surface of the semiconductor substrate. The transmission line 93 and the transmission line 95 have an elongated overlapping portion along the transmission line when viewed from a direction perpendicular to the substrate surface of the semiconductor substrate, and the transmission line 95 and the transmission line 96 Is elongated along the transmission line when viewed from the direction perpendicular to the substrate surface of the semiconductor substrate. Have Jo of the overlapping portion, the transmission line 97 and transmission line 95, when viewed from a direction perpendicular to the substrate surface of the semiconductor substrate, and have a overlapping portion of the elongated shape along the transmission line. In FIG. 9 (a), each transmission line is shown in a shifted position so that its location is clear, but the lower transmission line is hidden under the upper transmission line. They may overlap so that they end up. Since there is the above overlapping portion, the area occupied by the inductor is reduced as compared with the case where the equivalent inductor is formed of a single-layer transmission line, and the effect of the present invention appears.

  The feature of this embodiment is that transmission lines are densely formed in the first to third layers, thereby increasing the inductance per occupied area.

  FIG. 9B is a diagram in which the transmission lines of each layer are displayed separately, and the connections between the transmission lines are represented by broken lines. Transmission lines can be connected through via holes provided in an insulating layer between layers. The positions of such connection points are indicated by con1 to con7 in FIG. The output part of the transmission line 91 is connected to the input part of the transmission line 92 at the connection point con1, the output part of the transmission line 92 is connected to the input part of the transmission line 93 at the connection point con2, and the output part of the transmission line 93 is connected. Connected to the input of transmission line 94 at point con3, the output of transmission line 94 connected to the input of transmission line 95 at connection point con4, and the output of transmission line 95 connected to the input of transmission line 96 at connection point con5 The output part of the transmission line 96 is connected to the input part of the transmission line 97 at the connection point con6. The output part of the transmission line 97 is connected to the input part of the transmission line 98 of the fourth layer closer to (or farther from) the semiconductor substrate than the third layer at the connection point con7.

  As shown in FIG. 9A, the transmission lines 91 to 97 have a spiral shape in a state of being connected in series, and function as one inductor. The signal is input from the input part of the transmission line 91 and output from the output part of the transmission line 98.

  A ground plane 99 is provided around the inductor.

(Example 7)
FIG. 10 is a diagram for explaining a seventh embodiment of the present invention. The present embodiment is configured on a semiconductor substrate (not shown), and includes a first-layer transmission line 101, a second-layer transmission line 102, and a third-layer transmission line 103 as constituent elements. Here, the above-described layers overlap in order of the third layer, the second layer, and the first layer from the side close to the semiconductor substrate. However, this order may be reversed, that is, the order of the first layer, the second layer, and the third layer from the side closer to the semiconductor substrate.

  FIG. 10A is a plan view of the configuration of this embodiment viewed from a direction perpendicular to the substrate surface of the semiconductor substrate. The transmission line 101 and the transmission line 102 are perpendicular to the substrate surface of the semiconductor substrate. When viewed from a certain direction, the transmission line has an elongated overlapping portion along the transmission line, and the transmission line 101 and the transmission line 103 have the transmission line when viewed from a direction perpendicular to the substrate surface of the semiconductor substrate. An elongated overlapping portion is formed along the track. In FIG. 10 (a), each transmission line is shown in a shifted position so that its location is clear, but the lower transmission line is hidden under the upper transmission line. They may overlap so that they end up. The transmission lines 101, 102, 103 have a spiral shape and function as inductors. Since there is the above overlapping portion, the area occupied by the inductor is reduced as compared with the case where the equivalent inductor is formed of a single-layer transmission line, and the effect of the present invention appears.

  FIG. 10B is a diagram in which the transmission lines of each layer are displayed separately, and the connections between the transmission lines are represented by broken lines. The transmission lines can be connected to each other through a connection portion that is a conductor in a via hole provided in an insulating layer between the layers. The position of such a connection point is indicated by con1 in FIG. The output part of the transmission line 101 is connected to the input part of the transmission line 102 and the input part of the transmission line 103 at the connection point con1.

  With the above connection, as shown in FIG. 11, a T-type circuit having an inductor as a component is formed, and the input section of the transmission line 101 becomes port 1 (shown as port 1 in the figure, the same applies hereinafter). The output units 102 and 103 are ports 2 and 3, respectively. The signal is input from port 1 and output from ports 2 and 3.

(Example 8)
FIG. 12 is a diagram for explaining an eighth embodiment of the present invention. This embodiment is configured on a semiconductor substrate (not shown), and includes a first-layer transmission line 121 and a third-layer transmission line 122 as components. Here, the above layers are overlapped in order of the third layer and the first layer from the side close to the semiconductor substrate, and the second layer is interposed between the third layer and the first layer. However, this order may be reversed, that is, the order of the first layer, the second layer, and the third layer from the side closer to the semiconductor substrate.

  FIG. 12A is a plan view of the configuration of this embodiment viewed from a direction perpendicular to the substrate surface of the semiconductor substrate. The transmission line 121 and the transmission line 122 are perpendicular to the substrate surface of the semiconductor substrate. When viewed from various directions, it has an elongated overlapping portion along the transmission line. In FIG. 12 (a), each transmission line is shown in a shifted position so that its location is clear, but the lower transmission line is hidden under the upper transmission line. They may overlap so that they end up. The transmission lines 121 and 122 have a spiral shape and function as inductors. Since there is the above overlapping portion, the area occupied by the inductor is reduced as compared with the case where the equivalent inductor is formed of a single-layer transmission line, and the effect of the present invention appears.

  FIG. 12B is a diagram in which the transmission lines of each layer are displayed separately, and the connections between the transmission lines are represented by broken lines. The transmission lines can be connected to each other through a connection portion that is a conductor in a via hole provided in an insulating layer between the layers. The position of such a connection point is indicated by con1 to con3 in FIG. The input part of the transmission line 121 and the input part of the transmission line 122 are connected at the connection point con1, the output part of the transmission line 121 is connected to the input part of the third-layer transmission line 123 at the connection point con2, and the transmission line 122 is connected. Is connected to the input part of the transmission line 124 of the fourth layer closer to (or farther from) the semiconductor substrate than the third layer at the connection point con3.

  With the above connection, as shown in FIG. 13, a circuit having an inductor as a component is formed, the input portions of the transmission lines 121 and 122 become the port 1, and the output portions of the transmission lines 123 and 124 become the port, respectively. 2 and 3. The signal is input from port 1 and output from ports 2 and 3.

In the present embodiment, the transmission lines 121 and 122 correspond to the first and third transmission lines according to claim 1, respectively, and the transmission line 121 and the transmission line 122 are connected via the connecting portion. Yes.

Example 9
FIG. 14 is a diagram for explaining a ninth embodiment of the present invention. The present embodiment is configured on a semiconductor substrate (not shown), and includes a first-layer transmission line 141 and a second-layer transmission line 142 as constituent elements. Here, the above-mentioned layers overlap in order of the second layer and the first layer from the side close to the semiconductor substrate. However, this order may be reversed, that is, the order of the first layer and the second layer from the side closer to the semiconductor substrate.

  FIG. 14A is a plan view of the configuration of this embodiment viewed from a direction perpendicular to the substrate surface of the semiconductor substrate. The transmission line 141 and the transmission line 142 are perpendicular to the substrate surface of the semiconductor substrate. When viewed from various directions, it has an elongated overlapping portion along the transmission line. In FIG. 14 (a), each transmission line is shown in a shifted position so that its location is clear, but the lower transmission line is hidden under the upper transmission line. They may overlap so that they end up. The transmission lines 141 and 142 have a spiral shape and function as inductors. Since there is the above overlapping portion, the area occupied by the inductor is reduced as compared with the case where the equivalent inductor is formed of a single-layer transmission line, and the effect of the present invention appears.

  FIG. 14B is a diagram in which the transmission lines of each layer are displayed separately, and the connections between the transmission lines are represented by broken lines. The transmission lines can be connected to each other through a connection portion that is a conductor in a via hole provided in an insulating layer between the layers. The position of such a connection point is indicated by con1 in FIG. The output part of the transmission line 141 is connected to the output part of the transmission line 142 and the input part of the third-layer transmission line 143 closer to (or farther from) the semiconductor substrate than the second layer at con1.

  With the above connection, as shown in FIG. 15, a circuit having an inductor as a component is formed. The input parts of the transmission lines 141 and 142 are ports 1 and 2, respectively, and the output part of the transmission line 143 is 3 It becomes. Signals are input from ports 1 and 2 and output from port 3.

In the present embodiment, the transmission lines 141 and 142 correspond to the first and third transmission lines according to claim 1, respectively, and the transmission line 141 and the transmission line 142 are connected via the connecting portion. Yes.

(Example 10)
FIG. 16 is a diagram for explaining a tenth embodiment of the present invention. The present embodiment is configured on a semiconductor substrate (not shown), and includes a first-layer transmission line 161, a second-layer transmission line 162, and a third-layer transmission line 163 as constituent elements. Here, the above-described layers overlap in order of the third layer, the second layer, and the first layer from the side close to the semiconductor substrate. However, this order may be reversed, that is, the order of the first layer, the second layer, and the third layer from the side closer to the semiconductor substrate.

  FIG. 16A is a plan view of the configuration of the present embodiment viewed from a direction perpendicular to the substrate surface of the semiconductor substrate. The transmission line 161 and the transmission line 162 are perpendicular to the substrate surface of the semiconductor substrate. When viewed from one direction, the transmission line 161 has an elongated overlapping portion along the transmission line, and the transmission line 161 and the transmission line 163 have the transmission line when viewed from a direction perpendicular to the substrate surface of the semiconductor substrate. An elongated overlapping portion is formed along the track. In FIG. 16 (a), each transmission line is shown in a shifted position so that its location is clear, but the lower transmission line is hidden under the upper transmission line. They may overlap so that they end up. The transmission lines 161, 162, and 163 have a meander shape and function as inductors. Since there is the above overlapping portion, the area occupied by the inductor is reduced as compared with the case where the equivalent inductor is formed of a single-layer transmission line, and the effect of the present invention appears.

  FIG. 16B is a diagram in which the transmission lines of each layer are displayed separately, and the connections between the transmission lines are represented by broken lines. The transmission lines can be connected to each other through a connection portion that is a conductor in a via hole provided in an insulating layer between the layers. The positions of such connection points are indicated by con1 to con3 in FIG. 16A, including the positions of connection points that do not use via holes. The first output part of the transmission line 161 is connected to the input part of the transmission line 162 at the connection point con1, the output part of the transmission line 162 is connected to the input part of the transmission line 163 at the connection point con2, The output part 2 is connected to one terminal of a capacitor 164 formed on the semiconductor substrate at con3. The T-type circuit shown in FIG. 2 is configured by the above connection. The signal is input from the input unit of the transmission line 161 and output from the output unit of the transmission line 163.

  A ground plane 165 is provided around the T-type circuit.

  In this embodiment, the transmission line having the meander shape is replaced with a transmission line having a spiral shape, and at least two of the transmission lines having the spiral shape are viewed from a direction perpendicular to the substrate surface of the semiconductor substrate. Even if it has an elongated overlapping portion along the transmission line, the same effect as in the present embodiment can be obtained.

(Example 11)
FIG. 17 is a diagram for explaining an eleventh embodiment of the present invention. This embodiment is configured on a semiconductor substrate (not shown), and includes a first layer transmission line 171, a second layer transmission line 172, and a third layer transmission line 173 as constituent elements. Here, the above-described layers overlap in order of the third layer, the second layer, and the first layer from the side close to the semiconductor substrate. However, this order may be reversed, that is, the order of the first layer, the second layer, and the third layer from the side closer to the semiconductor substrate.

  FIG. 17A is a plan view of the configuration of this embodiment viewed from a direction perpendicular to the substrate surface of the semiconductor substrate. The transmission line 171 and the transmission line 172 are perpendicular to the substrate surface of the semiconductor substrate. When viewed from one direction, the transmission line has an elongated overlapping portion along the transmission line, and the transmission line 171 and the transmission line 173 have the transmission line when viewed from a direction perpendicular to the substrate surface of the semiconductor substrate. An elongated overlapping portion is formed along the track. In FIG. 17 (a), each transmission line is shown in a shifted position so that its location is clear, but the lower transmission line is hidden under the upper transmission line. They may overlap so that they end up. The transmission lines 171, 172, and 173 have meander shapes and function as inductors. Since there is the above overlapping portion, the area occupied by the inductor is reduced as compared with the case where the equivalent inductor is formed of a single-layer transmission line, and the effect of the present invention appears.

  FIG. 17B is a diagram in which the transmission lines of each layer are displayed separately, and the connections between the transmission lines are represented by broken lines. The transmission lines can be connected to each other through a connection portion that is a conductor in a via hole provided in an insulating layer between the layers. The positions of such connection points are indicated by con1 and con2 in FIG. The output part of the transmission line 171 is connected to the input part of the transmission line 172 at the connection point con1, and the output part of the transmission line 172 is connected to the input part of the transmission line 173 at the connection point con2. One inductor is configured by the above connection. The signal is input from the input unit of the transmission line 171 and output from the output unit of the transmission line 173.

  A ground plane 174 is provided around the inductor.

(Example 12)
FIG. 18 is a diagram for explaining a twelfth embodiment of the present invention. In this embodiment, a first layer transmission line 181, a second layer transmission line 182, a third layer transmission line 183, and a fourth layer transmission line 184 are formed on a semiconductor substrate (not shown). As an element. Here, the above-mentioned layers overlap in order of the third layer, the second layer, the first layer, and the fourth layer from the side close to the semiconductor substrate. However, this order may be reversed, that is, the order of the first layer, the second layer, the third layer, and the fourth layer from the side closer to the semiconductor substrate.

  FIG. 18A is a plan view of the configuration of the present embodiment viewed from a direction perpendicular to the substrate surface of the semiconductor substrate. Each of the transmission lines 181 to 184 is formed on the substrate surface of the semiconductor substrate. When viewed from the vertical direction, the transmission line has an elongated overlapping portion along the transmission line. In FIG. 18 (a), each transmission line is shown in a shifted position so that its location is clear, but the lower transmission line is hidden under the upper transmission line. They may overlap so that they end up. The transmission lines 181 to 184 have meander shapes and function as inductors. Since there is the above overlapping portion, the area occupied by the inductor is reduced as compared with the case where the equivalent inductor is formed of a single-layer transmission line, and the effect of the present invention appears.

  FIG. 18B is a diagram in which the transmission lines of each layer are displayed separately, and the connections between the transmission lines are represented by broken lines. The transmission lines can be connected to each other through a connection portion that is a conductor in a via hole provided in an insulating layer between the layers. The positions of such connection points are indicated by con1, con2, and con3 in FIG. The output part of the transmission line 181 is connected to the input part of the transmission line 182 at the connection point con1, the output part of the transmission line 182 is connected to the input part of the transmission line 183 at the connection point con2, and the output part of the transmission line 183 is connected. The point con3 is connected to the input part of the transmission line 184. One inductor is configured by the above connection. The signal is input from the input unit of the transmission line 181 and output from the output unit of the transmission line 184.

  A ground plane 185 is provided around the inductor.

  When the transmission line having the meander shape in this embodiment is replaced with a transmission line having a spiral shape, when at least two of the transmission lines having the spiral shape are viewed from a direction perpendicular to the substrate surface of the semiconductor substrate, Even if it has an elongated overlapping portion along the transmission line, the same effect as in the present embodiment can be obtained.

  Further, the transmission line having a spiral shape in Examples 1 to 9 was replaced with a transmission line having a meander shape, and at least two of the transmission lines having the meander shape were viewed from a direction perpendicular to the substrate surface of the semiconductor substrate. In some cases, the same effects as those of the respective embodiments can be obtained even if the overlapping portions of the elongated shape are formed along the transmission line.

  In all of the above embodiments, when viewed from a direction perpendicular to the substrate surface of the semiconductor substrate, two transmission lines having an elongated overlapping portion along the transmission line have currents in the same direction. It comes to flow. By doing so, the inductance of the inductor is remarkably increased compared to the case of a single layer.

  FIG. 19 shows a result of actual measurement comparing the inductance of the inductor (shown in FIG. 7) in Example 4 and the inductance of a conventional single-layer inductor. In the figure, the former is described as “FIG. 7 type” and the latter as “conventional type”. In this case, compared with the conventional type inductor, it can be seen that the total length of the transmission line of the inductor of FIG. 7 type is about twice, but has about three times the inductance. As described above, it is one of the remarkable effects of the present invention that the implementation of the present invention provides an inductance larger than the inductance calculated as being proportional to the magnification of the total length of the transmission line.

  By making the inductor according to the present invention a structure as shown in FIG. 1, FIG. 3, FIG. 5, or FIG. 16, a T-type circuit with a significantly reduced dedicated area can be realized. The transmission line portion in this case may be configured as shown in FIG. By adopting such a configuration, for example, the area of the transmission line portion can be reduced to about half or less as compared with the conventional structure as shown in FIGS.

  Furthermore, by arranging a ground plane having an opening in the periphery, the influence of the substrate can be reduced by inducing an electric field or a magnetic field in the ground plane while improving the Q value of the inductor by the opening. Furthermore, by using this ground plane, a low-pass circuit can be easily configured by connecting the terminal of the capacitor in FIG. 1, FIG. 5 or FIG. 16 that is not connected to the transmission line to the ground plane. .

  Further, by placing the capacitor under the ground plane in FIG. 1, FIG. 3, FIG. 5, or FIG. 16, parasitic coupling between the inductor and the capacitor can be reduced.

  Furthermore, by adopting the structure as shown in FIG. 10, a T-type circuit using only an inductor can be configured. In this case, it is possible to reduce the area occupied by an inductor having the same inductance to about 1/3 compared to a conventional inductor. In other words, it is possible to increase the inductance per the same exclusive area by a factor of three, or the same thing as in FIG.

  Further, by using the structure shown in FIGS. 12 and 14, the area occupied by the parallel inductors can be reduced. In this case, it is possible to halve the occupied area as compared with the conventional inductor. This circuit is suitable for a signal distributor or the like.

  Further, by using the inductor having the structure as shown in FIG. 9, it is possible to significantly reduce the occupied area compared to the conventional case in comparison with the same inductance.

1 is a diagram illustrating a configuration of Example 1. FIG. 2 is an equivalent circuit of the first embodiment. FIG. 6 is a diagram illustrating a configuration of a second embodiment. 3 is an equivalent circuit of the second embodiment. FIG. 6 is a diagram illustrating a configuration of Example 3. 6 is an equivalent circuit of Embodiment 3. FIG. 10 is a diagram illustrating a configuration of Example 4. FIG. 10 is a diagram illustrating the configuration of a fifth embodiment. FIG. 10 is a diagram illustrating a configuration of Example 6. FIG. 10 is a diagram illustrating a configuration of Example 7. 10 is an equivalent circuit of Example 7. FIG. 10 is a diagram illustrating the configuration of an eighth embodiment. 10 is an equivalent circuit of Example 8. FIG. 10 is a diagram illustrating a configuration of Example 9. 10 is an equivalent circuit of Example 9. It is a figure explaining the structure of Example 10. FIG. It is a figure explaining the structure of Example 11. FIG. FIG. 10 is a diagram illustrating a configuration of Example 12. It is the figure which compared the inductance of the inductor which concerns on this invention with the inductance of the conventional inductor. It is a figure which shows an example of the conventional inductor. It is a figure which shows an example of the conventional inductor.

Explanation of symbols

  11: first layer transmission line, 12: second layer transmission line, 13: third layer transmission line, 14: fourth layer transmission line, 15: capacitor, 16: ground plane, 31: first layer 32, 33: second layer transmission line, 34: third layer transmission line, 35: fourth layer transmission line, 36: capacitor, 37: ground plane, 51: first layer transmission line 52: second layer transmission line, 53: third layer transmission line, 54: fourth layer transmission line, 55: capacitor, 56: ground plane, 71: first layer transmission line, 72: second layer Layer transmission line, 73: third layer transmission line, 74: fourth layer transmission line, 75: ground plane, 81: first layer transmission line, 82: second layer transmission line, 83: third layer Layer transmission line, 84: fourth layer transmission line, 85: ground plane, 91: first layer transmission line, 92: second layer transmission line, 93: third layer transmission line, 94: second layer Layer transmission line 95: first layer transmission line, 96: second layer transmission line, 97: third layer transmission line, 98: fourth layer transmission line, 99: ground plane, 101: first layer transmission line, 102: second layer transmission line, 103: third layer transmission line, 121: first layer transmission line, 122: third layer transmission line, 123: second layer transmission line, 124: fourth layer 141: first layer transmission line, 142: second layer transmission line, 143: third layer transmission line, 161: first layer transmission line, 162: second layer transmission line, 163 : Transmission layer of the third layer, 164: capacitor, 165: ground plane, 171: transmission line of the first layer, 172: transmission line of the second layer, 173: transmission line of the third layer, 174: ground plane, 181 : Transmission layer of the first layer, 182: Transmission line of the second layer, 183: Transmission line of the third layer, 184: Transmission line of the second layer, 185: Ground plane, 191, 192, 193, 194: Transmission line 195: Capa Motor, 201: transmission line, 202: capacitor.

Claims (9)

  1. An inductor formed on a semiconductor substrate,
    A first transmission line formed in a first layer on the semiconductor substrate; a second transmission line formed in a second layer overlying the first layer; and The third transmission line formed in the third layer that overlaps the opposite side of the first layer as a component,
    The first transmission line and the third transmission line have overlapping portions along the first and third transmission lines when viewed from a direction perpendicular to the substrate surface of the semiconductor substrate,
    The output section of the first transmission line is connected to the input section of the second transmission line via a connection section, and the first output section of the second transmission line is connected to the input section of the third transmission line. The inductor is characterized in that the second output section of the second transmission line is connected to one terminal of a capacitor formed on the semiconductor substrate.
  2. An inductor formed on a semiconductor substrate,
    A first transmission line formed in a first layer on the semiconductor substrate; a second transmission line and a third transmission line formed in a second layer overlapping the first layer; The fourth transmission line formed in the third layer that overlaps the opposite side of the second layer to the first layer is a component,
    The first transmission line and the fourth transmission line have overlapping portions along the first and fourth transmission lines when viewed from a direction perpendicular to the substrate surface of the semiconductor substrate,
    The output part of the first transmission line is connected to the input part of the second transmission line via a connection part, and the output part of the second transmission line is a first capacitor formed on the semiconductor substrate. The second terminal of the capacitor is connected to the input part of the third transmission line, and the output part of the third transmission line is connected to the input part of the fourth transmission line. Inductor characterized by being connected through.
  3. An inductor formed on a semiconductor substrate,
    A first transmission line formed in a first layer on the semiconductor substrate; a second transmission line formed in a second layer overlying the first layer; and The third transmission line formed in the third layer that overlaps the opposite side of the first layer as a component,
    The first transmission line and the third transmission line have overlapping portions along the first and third transmission lines when viewed from a direction perpendicular to the substrate surface of the semiconductor substrate,
    The output part of the first transmission line is connected to the input part of the second transmission line via a connection part, and the output part of the second transmission line is a first capacitor formed on the semiconductor substrate. The inductor is characterized in that the second terminal of the capacitor is connected to the input portion of the third transmission line.
  4. An inductor formed on a semiconductor substrate,
    A first transmission line formed in a first layer on the semiconductor substrate; a second transmission line formed in a second layer overlying the first layer; and The third transmission line formed in the third layer that overlaps the opposite side of the first layer as a component,
    The first transmission line and the third transmission line have overlapping portions along the first and third transmission lines when viewed from a direction perpendicular to the substrate surface of the semiconductor substrate,
    The output part of the first transmission line is connected to the input part of the second transmission line via a connection part, and the output part of the second transmission line is connected to the input part of the third transmission line. An inductor characterized by being connected via
  5. An inductor formed on a semiconductor substrate,
    A first transmission line formed in a first layer on the semiconductor substrate; a second transmission line formed in a second layer overlying the first layer; and A third transmission line formed in a third layer overlapping the opposite side of the first layer, a fourth transmission line formed in the second layer, and in the first layer And the fifth transmission line formed in the second layer, the sixth transmission line formed in the second layer, and the seventh transmission line formed in the third layer,
    The first transmission line and the second transmission line have overlapping portions along the first and second transmission lines when viewed from a direction perpendicular to the substrate surface of the semiconductor substrate, The first transmission line and the third transmission line have overlapping portions along the first and third transmission lines when viewed from a direction perpendicular to the substrate surface of the semiconductor substrate, The third transmission line and the fourth transmission line have overlapping portions along the third and fourth transmission lines when viewed from a direction perpendicular to the substrate surface of the semiconductor substrate, The third transmission line and the fifth transmission line have overlapping portions along the third and fifth transmission lines when viewed from a direction perpendicular to the substrate surface of the semiconductor substrate, The fifth transmission line and the sixth transmission line are connected to the fifth and sixth transmission lines when viewed from a direction perpendicular to the substrate surface of the semiconductor substrate. And the fifth transmission line and the seventh transmission line are formed on the fifth and sixth transmission lines when viewed from a direction perpendicular to the substrate surface of the semiconductor substrate. Have overlapping parts along,
    The output part of the first transmission line is connected to the input part of the second transmission line via a connection part, and the output part of the second transmission line is connected to the input part of the third transmission line. And the output section of the third transmission line is connected to the input section of the fourth transmission line via the connection section, and the output section of the fourth transmission line is connected to the fifth transmission line. Connected to the input portion of the sixth transmission line, the output portion of the fifth transmission line is connected to the input portion of the sixth transmission line via the connection portion, and the output portion of the sixth transmission line is An inductor connected to an input part of the seventh transmission line via a connection part.
  6. An inductor formed on a semiconductor substrate,
    A first transmission line formed in a first layer on the semiconductor substrate; a second transmission line formed in a second layer overlying the first layer; and The third transmission line formed in the third layer that overlaps the opposite side of the first layer as a component,
    The first transmission line and the second transmission line have overlapping portions along the first and second transmission lines when viewed from a direction perpendicular to the substrate surface of the semiconductor substrate, The first transmission line and the third transmission line have overlapping portions along the first and third transmission lines when viewed from a direction perpendicular to the substrate surface of the semiconductor substrate,
    The output section of the first transmission line is connected to the input section of the second transmission line and the input section of the third transmission line via a connection section.
  7. An inductor formed on a semiconductor substrate,
    A first transmission line formed in a first layer on the semiconductor substrate; a second transmission line formed in a second layer overlying the first layer; and The third transmission line formed in the third layer that overlaps the opposite side of the first layer as a component,
    The first transmission line and the third transmission line have overlapping portions along the first and third transmission lines when viewed from a direction perpendicular to the substrate surface of the semiconductor substrate,
    The first output section of the first transmission line is connected to the input section of the second transmission line via a connection section, and the output section of the second transmission line is connected to the input section of the third transmission line. An inductor, wherein the second output portion of the first transmission line is connected to one terminal of a capacitor formed on the semiconductor substrate.
  8. An inductor formed on a semiconductor substrate,
    A first transmission line formed in a first layer on the semiconductor substrate; a second transmission line formed in a second layer overlying the first layer; and A third transmission line formed in a third layer overlapping the opposite side of the first layer, and a fourth layer overlapping the opposite side of the third layer to the second layer; With the formed fourth transmission line as a component,
    The first transmission line and the third transmission line have overlapping portions along the first and third transmission lines when viewed from a direction perpendicular to the substrate surface of the semiconductor substrate, The second transmission line and the fourth transmission line have overlapping portions along the second and fourth transmission lines when viewed from a direction perpendicular to the substrate surface of the semiconductor substrate,
    The output part of the first transmission line is connected to the input part of the second transmission line via a connection part, and the output part of the second transmission line is connected to the input part of the third transmission line. And an output section of the third transmission line is connected to an input section of the fourth transmission line via a connection section.
  9. At least two of the transmission lines have overlapping portions along the two transmission lines when viewed from a direction perpendicular to the substrate surface of the semiconductor substrate, and the two transmission lines are both spiral-shaped. having or inductor according to any one of claims 1 to 8 together, characterized in that it has a meander shape.
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