JP4495698B2 - Iii族窒化物半導体デバイスの製造 - Google Patents
Iii族窒化物半導体デバイスの製造 Download PDFInfo
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- JP4495698B2 JP4495698B2 JP2006166525A JP2006166525A JP4495698B2 JP 4495698 B2 JP4495698 B2 JP 4495698B2 JP 2006166525 A JP2006166525 A JP 2006166525A JP 2006166525 A JP2006166525 A JP 2006166525A JP 4495698 B2 JP4495698 B2 JP 4495698B2
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- group iii
- iii nitride
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- nitride semiconductor
- nitride
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- 239000004065 semiconductor Substances 0.000 title claims description 86
- 150000004767 nitrides Chemical class 0.000 title claims description 72
- 238000004519 manufacturing process Methods 0.000 title claims description 8
- 238000000034 method Methods 0.000 claims description 56
- 239000000758 substrate Substances 0.000 claims description 25
- 239000000463 material Substances 0.000 claims description 24
- 230000004888 barrier function Effects 0.000 claims description 23
- 239000000956 alloy Substances 0.000 claims description 12
- 229910045601 alloy Inorganic materials 0.000 claims description 12
- 239000000203 mixture Substances 0.000 claims description 12
- 230000002401 inhibitory effect Effects 0.000 claims description 11
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 10
- 229910052710 silicon Inorganic materials 0.000 claims description 9
- 239000010703 silicon Substances 0.000 claims description 9
- 229910002704 AlGaN Inorganic materials 0.000 claims description 5
- 239000003966 growth inhibitor Substances 0.000 claims description 5
- 235000012239 silicon dioxide Nutrition 0.000 claims description 5
- 239000000377 silicon dioxide Substances 0.000 claims description 5
- 229910052594 sapphire Inorganic materials 0.000 claims description 4
- 239000010980 sapphire Substances 0.000 claims description 4
- 235000012773 waffles Nutrition 0.000 claims description 2
- 229910052581 Si3N4 Inorganic materials 0.000 claims 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims 2
- 229910010271 silicon carbide Inorganic materials 0.000 claims 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims 2
- 230000009036 growth inhibition Effects 0.000 claims 1
- 230000008569 process Effects 0.000 description 18
- 239000010410 layer Substances 0.000 description 17
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 7
- 238000005336 cracking Methods 0.000 description 7
- 229910052782 aluminium Inorganic materials 0.000 description 4
- 239000013078 crystal Substances 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 230000005764 inhibitory process Effects 0.000 description 2
- 238000005520 cutting process Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000000945 filler Substances 0.000 description 1
- 229910021478 group 5 element Inorganic materials 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
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Classifications
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
- C30B23/02—Epitaxial-layer growth
- C30B23/04—Pattern deposit, e.g. by using masks
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/04—Pattern deposit, e.g. by using masks
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
- C30B29/403—AIII-nitrides
Description
Claims (36)
- III族窒化物半導体デバイスを製造する方法であって、
基板の表面上にIII族窒化物成長阻害部を形成することと、
前記III族窒化物成長阻害部の一部分を選択的に除去し、前記基板の一部分を露出させ、III族窒化物成長面として機能させることと、
前記露出部分の少なくとも1つの周囲にトレンチを形成することと、
前記露出部分の少なくとも1つの上にIII族窒化物半導体部を成長することと
を含み、前記成長阻害部は、前記半導体デバイスの外部境界を画定することを特徴とする方法。 - 前記III族窒化物半導体部は、前記露出部分の前記少なくとも1つの上のバッファ層、および前記バッファ層上に形成されたIII族窒化物半導体電力デバイスを備えることを特徴とする請求項1に記載の方法。
- 前記バッファ層は、AlNを含むことを特徴とする請求項2に記載の方法。
- 前記バッファ層は、傾斜組成であることを特徴とする請求項2に記載の方法。
- 前記バッファ層は、傾斜組成AlNを含むことを特徴とする請求項2に記載の方法。
- 前記III族窒化物電力半導体デバイスは、GaN部および前記GaN部上のAlGaN部を備えることを特徴とする請求項2に記載の方法。
- 前記III族窒化物成長阻害部は、二酸化ケイ素を含むことを特徴とする請求項1に記載の方法。
- 前記III族窒化物成長阻害部は、窒化ケイ素を含むことを特徴とする請求項1に記載の方法。
- 前記III族窒化物成長阻害部は、ワッフル状であることを特徴とする請求項1に記載の方法。
- 前記トレンチをIII族窒化物成長阻害部で充填することをさらに含むことを特徴とする請求項1に記載の方法。
- 前記露出部分の前記少なくとも1つの下の領域をアモルファスにすることをさらに含むことを特徴とする請求項1に記載の方法。
- 前記基板は、シリコンを含むことを特徴とする請求項1に記載の方法。
- 前記基板は、シリコンカーバイドを含むことを特徴とする請求項1に記載の方法。
- 前記基板は、サファイアを含むことを特徴とする請求項1に記載の方法。
- III族窒化物半導体部は、InAlGaN系からの1つの合金、およびInAlGaN系からの別の合金を含む第1のIII族窒化物半導体部を備えることを特徴とする請求項1に記載の方法。
- 前記III族窒化物成長阻害部を、選択的に除去し、前記基板の上に格子パターンを形成することを特徴とする請求項1に記載の方法。
- 前記成長面は、少なくとも1平方ミリメートルであることを特徴とする請求項1に記載の方法。
- 前記III族窒化物成長阻害部は、前記III族窒化物デバイスの高さを画定することを特徴とする請求項1に記載の方法。
- 前記高さは、少なくとも1ミクロンであることを特徴とする請求項18に記載の方法。
- III族窒化物ベースの半導体デバイスを製造する方法であって、
基板の表面上にIII族窒化物成長障壁を形成することであって、各成長障壁は、対応するIII族窒化物半導体成長面を画定することと、
前記画定された成長面の少なくとも1つの周囲にトレンチを形成することと、
前記画定された成長面の少なくとも1つの上にIII族窒化物半導体部を成長することであって、前記III族窒化物成長障壁のそれぞれは、それぞれの半導体デバイスの外部境界を画定することと
を含むことを特徴とする方法。 - 前記障壁は、二酸化ケイ素を含むことを特徴とする請求項20に記載の方法。
- 前記障壁は、窒化ケイ素を含むことを特徴とする請求項20に記載の方法。
- 前記基板は、シリコンを含むことを特徴とする請求項20に記載の方法。
- 前記基板は、シリコンカーバイドを含むことを特徴とする請求項20に記載の方法。
- 前記基板は、サファイアを含むことを特徴とする請求項20に記載の方法。
- 前記成長面の少なくとも1つの上に中間層を成長し、ついで、前記中間層上にIII族窒化物半導体部を成長することをさらに含むことを特徴とする請求項20に記載の方法。
- 前記中間層は、AlNを含むことを特徴とする請求項26に記載の方法。
- 前記中間層は、傾斜組成AlNを含むことを特徴とする請求項26に記載の方法。
- 前記III族窒化物半導体部は、InAlGaN系からの1つの半導体合金を含む1つのIII族窒化物半導体部と、InAlGaN系からの別の半導体合金を含む別のIII族窒化物半導体部とを備えるヘテロ接合であることを特徴とする請求項20に記載の方法。
- 前記成長面の少なくとも1つは、少なくとも1平方ミリメートルであることを特徴とする請求項20に記載の方法。
- 前記成長障壁は、前記III族窒化物ベースの半導体デバイスの高さを画定することを特徴とする請求項20に記載の方法。
- 前記高さは、少なくとも1ミクロンであることを特徴とする請求項31に記載の方法。
- 前記バッファ層は、InAlGaN系からの傾斜組成III族窒化物材料であることを特徴とする請求項2に記載の方法。
- 中間層は、InAlGaN系からの傾斜組成III族窒化物材料であることを特徴とする請求項26に記載の方法。
- 前記バッファ層は、InAlGaN系からのIII族窒化物半導体の複数の層を含み、各層は、異なる組成であることを特徴とする請求項2に記載の方法。
- 前記中間層は、InAlGaN系からのIII族窒化物半導体の複数の層を含み、各層は、異なる組成であることを特徴とする請求項26に記載の方法。
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US69062705P | 2005-06-15 | 2005-06-15 | |
US11/452,547 US8168000B2 (en) | 2005-06-15 | 2006-06-14 | III-nitride semiconductor device fabrication |
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JP4495698B2 true JP4495698B2 (ja) | 2010-07-07 |
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JP (1) | JP4495698B2 (ja) |
DE (1) | DE102006027841B4 (ja) |
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Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8809907B2 (en) * | 2006-03-14 | 2014-08-19 | Northrop Grumman Systems Corporation | Leakage barrier for GaN based HEMT active device |
US8981380B2 (en) * | 2010-03-01 | 2015-03-17 | International Rectifier Corporation | Monolithic integration of silicon and group III-V devices |
US9219058B2 (en) * | 2010-03-01 | 2015-12-22 | Infineon Technologies Americas Corp. | Efficient high voltage switching circuits and monolithic integration of same |
TWI414004B (zh) * | 2010-10-25 | 2013-11-01 | Univ Nat Chiao Tung | 具有氮化鎵層的多層結構基板及其製法 |
US8629531B2 (en) * | 2011-02-18 | 2014-01-14 | Taiwan Semiconductor Manufacturing Company, Ltd. | Structure and method to reduce wafer warp for gallium nitride on silicon wafer |
KR102249689B1 (ko) * | 2014-06-24 | 2021-05-10 | 삼성전자 주식회사 | 전자장치, 무선신호 수신 방법 및 그것을 구비한 시스템 |
JP2017055008A (ja) * | 2015-09-11 | 2017-03-16 | 株式会社東芝 | 半導体装置 |
EP3573694A1 (en) | 2017-01-27 | 2019-12-04 | University of Limerick | Catheter securement device |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2003257997A (ja) * | 2002-02-28 | 2003-09-12 | Sumitomo Electric Ind Ltd | 窒化ガリウム系半導体装置を製造する方法 |
JP2003309071A (ja) * | 2002-04-15 | 2003-10-31 | Mitsubishi Cable Ind Ltd | GaN系半導体結晶基材 |
JP2006005331A (ja) * | 2004-05-18 | 2006-01-05 | Sumitomo Electric Ind Ltd | Iii族窒化物半導体結晶およびその製造方法、iii族窒化物半導体デバイスおよびその製造方法ならびに発光機器 |
Family Cites Families (46)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5218216A (en) * | 1987-01-31 | 1993-06-08 | Toyoda Gosei Co., Ltd. | Gallium nitride group semiconductor and light emitting diode comprising it and the process of producing the same |
JPS63281420A (ja) | 1987-05-13 | 1988-11-17 | Sharp Corp | 化合物半導体基板の製造方法 |
JP3026087B2 (ja) * | 1989-03-01 | 2000-03-27 | 豊田合成株式会社 | 窒化ガリウム系化合物半導体の気相成長方法 |
EP0444630B1 (en) * | 1990-02-28 | 1997-05-21 | Toyoda Gosei Co., Ltd. | Light-emitting semiconductor device using gallium nitride group compound |
US6830992B1 (en) * | 1990-02-28 | 2004-12-14 | Toyoda Gosei Co., Ltd. | Method for manufacturing a gallium nitride group compound semiconductor |
US5192987A (en) * | 1991-05-17 | 1993-03-09 | Apa Optics, Inc. | High electron mobility transistor with GaN/Alx Ga1-x N heterojunctions |
JP2608513B2 (ja) * | 1991-10-02 | 1997-05-07 | 三星電子株式会社 | 半導体装置の製造方法 |
KR100286699B1 (ko) * | 1993-01-28 | 2001-04-16 | 오가와 에이지 | 질화갈륨계 3-5족 화합물 반도체 발광디바이스 및 그 제조방법 |
US5372968A (en) * | 1993-09-27 | 1994-12-13 | United Microelectronics Corporation | Planarized local oxidation by trench-around technology |
US5656832A (en) * | 1994-03-09 | 1997-08-12 | Kabushiki Kaisha Toshiba | Semiconductor heterojunction device with ALN buffer layer of 3nm-10nm average film thickness |
US5432118A (en) * | 1994-06-28 | 1995-07-11 | Motorola, Inc. | Process for forming field isolation |
US6967369B1 (en) * | 1995-09-20 | 2005-11-22 | Micron Technology, Inc. | Semiconductor memory circuitry |
JP3700872B2 (ja) * | 1995-12-28 | 2005-09-28 | シャープ株式会社 | 窒化物系iii−v族化合物半導体装置およびその製造方法 |
KR100190010B1 (ko) * | 1995-12-30 | 1999-06-01 | 윤종용 | 반도체 소자의 소자분리막 형성방법 |
JP3164016B2 (ja) * | 1996-05-31 | 2001-05-08 | 住友電気工業株式会社 | 発光素子および発光素子用ウエハの製造方法 |
US5795798A (en) * | 1996-11-27 | 1998-08-18 | The Regents Of The University Of California | Method of making full color monolithic gan based leds |
JP3139445B2 (ja) * | 1997-03-13 | 2001-02-26 | 日本電気株式会社 | GaN系半導体の成長方法およびGaN系半導体膜 |
KR19980079320A (ko) * | 1997-03-24 | 1998-11-25 | 기다오까다까시 | 고품질 쥐에이엔계층의 선택성장방법, 고품질 쥐에이엔계층 성장기판 및 고품질 쥐에이엔계층 성장기판상에 제작하는 반도체디바이스 |
CN1292458C (zh) * | 1997-04-11 | 2006-12-27 | 日亚化学工业株式会社 | 氮化物半导体的生长方法、氮化物半导体衬底及器件 |
DE69835216T2 (de) * | 1997-07-25 | 2007-05-31 | Nichia Corp., Anan | Halbleitervorrichtung aus einer nitridverbindung |
JP3930161B2 (ja) * | 1997-08-29 | 2007-06-13 | 株式会社東芝 | 窒化物系半導体素子、発光素子及びその製造方法 |
US6015979A (en) * | 1997-08-29 | 2000-01-18 | Kabushiki Kaisha Toshiba | Nitride-based semiconductor element and method for manufacturing the same |
TW393785B (en) | 1997-09-19 | 2000-06-11 | Siemens Ag | Method to produce many semiconductor-bodies |
DE19838810B4 (de) | 1998-08-26 | 2006-02-09 | Osram Opto Semiconductors Gmbh | Verfahren zum Herstellen einer Mehrzahl von Ga(In,Al)N-Leuchtdiodenchips |
US6051849A (en) * | 1998-02-27 | 2000-04-18 | North Carolina State University | Gallium nitride semiconductor structures including a lateral gallium nitride layer that extends from an underlying gallium nitride layer |
US6265289B1 (en) * | 1998-06-10 | 2001-07-24 | North Carolina State University | Methods of fabricating gallium nitride semiconductor layers by lateral growth from sidewalls into trenches, and gallium nitride semiconductor structures fabricated thereby |
KR100304881B1 (ko) * | 1998-10-15 | 2001-10-12 | 구자홍 | Gan계화합물반도체및그의결정성장방법 |
US6255198B1 (en) * | 1998-11-24 | 2001-07-03 | North Carolina State University | Methods of fabricating gallium nitride microelectronic layers on silicon layers and gallium nitride microelectronic structures formed thereby |
US6177688B1 (en) * | 1998-11-24 | 2001-01-23 | North Carolina State University | Pendeoepitaxial gallium nitride semiconductor layers on silcon carbide substrates |
US7589007B2 (en) * | 1999-06-02 | 2009-09-15 | Arizona Board Of Regents For And On Behalf Of Arizona State University | MESFETs integrated with MOSFETs on common substrate and methods of forming the same |
KR20010029852A (ko) * | 1999-06-30 | 2001-04-16 | 도다 다다히데 | Ⅲ족 질화물계 화합물 반도체 소자 및 그 제조방법 |
US6265322B1 (en) * | 1999-09-21 | 2001-07-24 | Agere Systems Guardian Corp. | Selective growth process for group III-nitride-based semiconductors |
US6521514B1 (en) * | 1999-11-17 | 2003-02-18 | North Carolina State University | Pendeoepitaxial methods of fabricating gallium nitride semiconductor layers on sapphire substrates |
US6380108B1 (en) * | 1999-12-21 | 2002-04-30 | North Carolina State University | Pendeoepitaxial methods of fabricating gallium nitride semiconductor layers on weak posts, and gallium nitride semiconductor structures fabricated thereby |
US6403451B1 (en) * | 2000-02-09 | 2002-06-11 | Noerh Carolina State University | Methods of fabricating gallium nitride semiconductor layers on substrates including non-gallium nitride posts |
US6261929B1 (en) * | 2000-02-24 | 2001-07-17 | North Carolina State University | Methods of forming a plurality of semiconductor layers using spaced trench arrays |
US6334971B1 (en) * | 2000-07-20 | 2002-01-01 | Wen-Ping Huang | Manufacturing method for diode group processed by injection molding on the surface |
US6690042B2 (en) * | 2000-09-27 | 2004-02-10 | Sensor Electronic Technology, Inc. | Metal oxide semiconductor heterostructure field effect transistor |
US6649287B2 (en) * | 2000-12-14 | 2003-11-18 | Nitronex Corporation | Gallium nitride materials and methods |
DE10102315B4 (de) | 2001-01-18 | 2012-10-25 | Aixtron Se | Verfahren zum Herstellen von Halbleiterbauelementen und Zwischenprodukt bei diesen Verfahren |
DE10142656A1 (de) * | 2001-08-31 | 2003-03-27 | Osram Opto Semiconductors Gmbh | Verfahren zur Herstellung von Halbleiterschichten auf III-V-Nitridhalbleiter-Basis |
US20030189215A1 (en) * | 2002-04-09 | 2003-10-09 | Jong-Lam Lee | Method of fabricating vertical structure leds |
US7229499B2 (en) * | 2003-08-22 | 2007-06-12 | Matsushita Electric Industrial Co., Ltd. | Manufacturing method for semiconductor device, semiconductor device and semiconductor wafer |
JP2005117967A (ja) | 2003-09-09 | 2005-05-12 | Koden:Kk | 生鮮食品鮮度保持盆 |
US7420226B2 (en) * | 2005-06-17 | 2008-09-02 | Northrop Grumman Corporation | Method for integrating silicon CMOS and AlGaN/GaN wideband amplifiers on engineered substrates |
US20070018199A1 (en) * | 2005-07-20 | 2007-01-25 | Cree, Inc. | Nitride-based transistors and fabrication methods with an etch stop layer |
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Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2003257997A (ja) * | 2002-02-28 | 2003-09-12 | Sumitomo Electric Ind Ltd | 窒化ガリウム系半導体装置を製造する方法 |
JP2003309071A (ja) * | 2002-04-15 | 2003-10-31 | Mitsubishi Cable Ind Ltd | GaN系半導体結晶基材 |
JP2006005331A (ja) * | 2004-05-18 | 2006-01-05 | Sumitomo Electric Ind Ltd | Iii族窒化物半導体結晶およびその製造方法、iii族窒化物半導体デバイスおよびその製造方法ならびに発光機器 |
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US20070000433A1 (en) | 2007-01-04 |
JP2007036210A (ja) | 2007-02-08 |
DE102006027841A1 (de) | 2007-01-18 |
DE102006027841B4 (de) | 2013-03-21 |
US8168000B2 (en) | 2012-05-01 |
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