JP4438492B2 - Semiconductor device and manufacturing method thereof - Google Patents

Description

  The present invention relates to a semiconductor device using a semiconductor element and a method for manufacturing the same, and an object thereof is to provide a highly reliable light-emitting device that can emit light with high luminous efficiency and high luminance, and a method for manufacturing the same.

  The electrode forming surface of the semiconductor element chip having both positive and negative electrodes provided on the same surface side is opposed to the conductor wiring of the support substrate, and is joined via a conductive member to electrically and mechanically connect the semiconductor element and the support substrate. There is an implementation method to connect to. Such a mounting method is referred to as “flip chip mounting” in this specification.

  The semiconductor element is usually flip-chip mounted on the conductor wiring of the support substrate using ultrasonic waves. Hereinafter, the ultrasonic bonding method will be described. First, bumps are formed on a conductor wiring provided on the main surface of a support substrate on which a semiconductor element can be placed. Next, the electrode surface of the semiconductor element in which a pair of positive and negative electrodes are provided on the same surface is opposed to the bump, and both the positive and negative electrodes of the semiconductor element are brought into contact with the bump. Finally, ultrasonic vibration is applied to the bumps through the semiconductor element while applying pressure to the semiconductor element so that the distance between the support substrate and the electrode surface of the semiconductor element is narrowed. The contact portion between the bump support substrate and both the positive and negative electrode surfaces is melted by the pressure and frictional heat generated by ultrasonic vibration at this time, and the bump joins the conductor wiring and the electrode of the semiconductor element. In this way, the conductor wiring of the support substrate and the positive and negative electrodes of the semiconductor element are joined via the bumps, and electrical conduction between them is achieved.

  As described above, a light-emitting device described in Japanese Patent Application Laid-Open No. 2003-8083 is an example of a light-emitting device in which a semiconductor light-emitting element is flip-chip mounted. In the semiconductor light emitting device disclosed in Patent Document 1, a large number of bumps are arranged on a positive electrode that occupies most of a surface having a pair of positive and negative electrodes, and the same support substrate (hereinafter referred to as “submount”). A plurality of semiconductor light emitting elements are flip-chip mounted on the conductor wiring. Thereby, it can be set as the light-emitting device with high light-emitting luminance.

  Further, in conventional flip chip mounting, after bonding a semiconductor element to a support substrate, a resin (hereinafter referred to as “underfill resin”) is formed in the gap so as to fill a gap generated between the semiconductor element and the support substrate. .) Is injected (see, for example, JP-A-2001-244299). Thereby, the reliability of the semiconductor device can be improved.

Japanese Patent Laid-Open No. 2003-8083.

JP 2001-244299 A.

  However, when the semiconductor element is increased in size or when a large number of semiconductor elements are mounted on the same support substrate as described above, heat can not be efficiently radiated to the outside of the light emitting device, and the brightness of the light emitting device is increased. There is a limit.

  For example, a submount of a light emitting device disclosed in Patent Document 1 includes a first conductor wiring that is electrically connected to an external electrode and a positive electrode (negative electrode) of a light emitting element, and is insulated from the first conductor wiring. And a second conductor wiring for electrically connecting the positive electrode and the negative electrode of the light emitting element. Here, when viewed from the side of the light emitting element mounted on the flip chip, the first conductor wiring is formed outside the area facing the light emitting element in the area of the conductor wiring formed on the submount. In order to connect to the electrode, the substrate has a wider extending region and covers the main surface of the submount widely. On the other hand, the second conductor wiring is almost completely covered with the light-emitting element as viewed from the flip-chip mounted light-emitting element side, and has a small contact area with the outside air, so that the light-emitting element can efficiently dissipate heat. I can't. Therefore, heat generated from the light emitting element flip-chip mounted on the submount is mainly dissipated from the first conductor wiring via the bumps. However, in such a light-emitting device, when the submount is made of an insulating material, the heat radiation from the positive electrode side of a certain light-emitting element is electrically connected to the light-emitting element via the second conductive member. This tends to occur in the direction of the negative electrode of another light emitting element, and heat is trapped inside the light emitting device. Therefore, in such a conventional light emitting device, there is a limit to the heat dissipation characteristics of the light emitting device, and it is not possible to further increase the brightness of the light emitting device.

  Further, when the underfill resin is injected after the semiconductor element is bonded to the support substrate, for example, when the semiconductor element is flip-chip mounted with a plurality of bumps as in the light emitting device disclosed in Patent Document 1. The bumps on the outer side when viewed from the main surface direction of the support substrate become an obstacle, the resin may not be injected into the inner side, and a space may remain, and the remaining space reduces the reliability of the light emitting device. Cause. In particular, when a soft resin such as a gel-like silicone resin is used, the mixed bubbles easily move and may adversely affect the optical characteristics of the light emitting device. When the resin is injected in the subsequent process as described above, the gap cannot be completely filled, and the workability is lowered and the reliability of the light emitting device is lowered.

The present invention for solving the above-described problem is a support having a semiconductor element having a pair of positive and negative electrodes on the same surface side, and a conductor wiring in which each electrode of the semiconductor element is opposed and joined via a conductive member A first region having a conductive member bonded to one of the electrodes of the semiconductor element when viewed from a direction perpendicular to the main surface of the support substrate. If, surrounding at least a portion of the first region have a and a second region having a conductive member bonded to the other electrode of the semiconductor element, said second region, both corners of the semiconductor element The first region is disposed inside both corners of the semiconductor element so as to be surrounded by the second region, and is opposed to the other electrode. The conductive member is placed in the first region. That region, the conductive member in said second region is equal to or wider than the area to be placed. Thereby, heat dissipation from the semiconductor element can be efficiently performed, and the reliability of the semiconductor device and the light emission luminance of the light emitting device can be improved.

  The region where the conductive member is placed in the first region is wider than the region where the conductive member is placed in the second region. Thereby, heat dissipation from the semiconductor element can be efficiently performed from the first region to the outside of the light emitting element, and the reliability of the semiconductor device and the light emission luminance of the light emitting device can be improved.

  The semiconductor element has a positive electrode on the p-type semiconductor side and a negative electrode on the n-type semiconductor side, and each electrode is arranged such that the negative electrode is between the positive electrodes when viewed from the light emission observation plane direction. Are arranged alternately. This is preferable because it can be stably mounted on the support substrate having the conductor wiring according to the present invention, and the current flowing between the electrodes becomes uniform, whereby the light emission from the light emitting surface of the light emitting element becomes uniform.

  The n-type semiconductor includes a corner portion on which the conductive member is placed and facing each other when viewed from the light emission observation surface direction, a constricted portion that narrows from the corner toward an inner side of the semiconductor element, and the constricted portion. And an extended portion extending from the portion. Thus, the light extraction efficiency of the light-emitting element can be improved by reducing the n-side semiconductor region that does not contribute to the light emission of the light-emitting element and relatively increasing the p-side semiconductor region.

  In the present invention, it is preferable that a resin layer placed between the support substrate and the semiconductor element surrounds the conductive member. By comprising in this way, the clearance gap between a support substrate, a semiconductor element, and a electrically-conductive member is lose | eliminated, and the heat dissipation of a semiconductor device can be improved.

  The pair of positive and negative electrodes are divided into a plurality of regions, respectively, and the number of electrodes provided on the p-type semiconductor layer side of the semiconductor light emitting element is larger than the number of electrodes provided on the n-type semiconductor layer side. With this configuration, it is possible to reduce the number of electrodes on the n-type semiconductor layer side that are not observed as light emission of the semiconductor light emitting element, and to improve the light extraction efficiency from the light emitting element.

  The area of the electrode provided on the p-type semiconductor layer side of the semiconductor light emitting element is larger than the electrode provided on the n-type semiconductor layer side when viewed from the light emission observation plane direction. With this configuration, heat dissipation near the p-type semiconductor layer that generates a large amount of heat is improved, so that a light-emitting device with high reliability and high luminance can be obtained.

  Further, when a plurality of light emitting elements are mounted on the support substrate as the semiconductor element, a gap between the light emitting element and another light emitting element adjacent to the light emitting element is sealed with a resin layer. The light emission observation surface side of the light emitting element is covered with a wavelength conversion member that absorbs at least a part of the light from the light emitting element and emits light having a different wavelength. Thereby, it is possible to obtain a light emitting device having substantially uniform chromaticity depending on the light emission observation direction.

  Moreover, it is preferable that at least the semiconductor element is covered with a sealing member, and the resin layer has higher thermal conductivity than the sealing member. By comprising in this way, the heat dissipation from a semiconductor element to a support substrate direction through a resin layer can be improved.

  Moreover, it is preferable that the said resin layer contains a filler. By comprising in this way, it can be set as the semiconductor device in which the heat conductivity of the resin layer increased and the heat dissipation was further improved.

  The present invention also includes a semiconductor element having a positive electrode and a negative electrode on the same surface side, a support substrate having a conductor wiring that faces the electrode through a conductive member, and at least between the support substrate and the semiconductor element. In a method for manufacturing a semiconductor device having a resin layer that is placed and surrounds a conductive member, a resin layer that has elasticity in a cured state and includes a through hole in which a part of a conductor wiring is exposed is obtained by stencil printing. A first step of forming on the support substrate, a second step of forming at least two conductive members on the conductor wiring in the through-hole, and pressing the electrode of the semiconductor element to the conductive member and pressing it toward the support substrate A third step of joining the electrode of the semiconductor element and the conductive member by adding By using such a manufacturing method, workability can be improved.

  The present invention also includes a semiconductor element having a positive electrode and a negative electrode on the same surface side, a support substrate having a conductor wiring that faces the electrode through a conductive member, and at least between the support substrate and the semiconductor element. In a method for manufacturing a semiconductor device having a resin layer that is placed and surrounds a conductive member, a resin layer that has elasticity in a cured state and includes a through hole in which a part of a conductor wiring is exposed is obtained by stencil printing. A first step of forming on the support substrate, a second step of forming at least two conductive members with respect to the electrodes of the semiconductor element, the conductive member and the conductor wiring are opposed to each other, and pressure is applied in the direction of the support substrate And a third step of joining the conductive member and the conductor wiring. By using such a manufacturing method, workability can be improved. In particular, workability can be improved by forming the conductive member on the electrode in the step of forming the semiconductor element.

  As described above, the present invention can efficiently dissipate heat from a plurality of semiconductor elements flip-chip mounted on the same support substrate, and achieve higher luminance of the light-emitting device than in the past. Can do. In addition, the present invention includes a soft and elastic member in a cured state between the light emitting element and the support substrate, which not only improves the heat dissipation effect but also improves the light extraction efficiency. In addition, the resin layer is made of a soft and elastic member in a cured state as a resin layer in advance, and then the electrode of the LED chip is bonded to the conductor wiring of the support substrate. Workability is improved as compared with the case of forming.

  In a semiconductor device having a semiconductor element having a pair of positive and negative electrodes on the same surface side and a support substrate having a conductor wiring with the electrodes facing each other through a conductive member, the present inventor has supported as a result of various studies. When viewed from a direction perpendicular to the main surface of the substrate, the conductor wiring surrounds at least a part of the first region having a conductive member bonded to any one of the electrodes of the semiconductor element. And the second region having the conductive member bonded to the other electrode has led to the solution of the above problem.

  That is, taking a semiconductor light emitting element as an example of a semiconductor element, as shown in FIG. 2, a pair of positive and negative conductor wirings are provided on a support substrate, and a conductive member is bonded to the p-side electrode of the semiconductor light emitting element. A positive electrode region; and a negative electrode region having a conductive member bonded to the n-side electrode of the semiconductor light emitting element. Further, the positive electrode and negative electrode regions formed in a key shape or a comb shape surround at least part of each other region, and the region where the conductive member is placed in the positive electrode region is The area of the negative electrode is wider than the area where the conductive member is placed. Moreover, there are more conductive members placed in the positive electrode region than conductive members placed in the negative electrode region.

  With this configuration, for example, more bumps can be arranged above the light emitting region of the semiconductor light emitting element, that is, above the p-type semiconductor layer, and the heat dissipation of the light emitting device can be improved. Further, for example, when negative electrode side bumps are distributed at both corners of the semiconductor light emitting element as viewed from the light emission observation surface direction, and positive electrode side bumps are distributed near the center of the semiconductor light emitting element, the inner side of the semiconductor light emitting element It is possible to effectively dissipate heat that is easily trapped outside. Further, the resin layer filled between the light-emitting element and the support substrate eliminates a gap between the light-emitting element and the support substrate, so that heat dissipation from the light-emitting element to the support substrate is improved.

  Conventionally, for the purpose of filling a gap generated between a light emitting element and a support substrate, a resin is injected into the gap after the light emitting element is bonded to the support substrate. At this time, for example, when the light emitting element is bonded to the support substrate with a plurality of bumps, the outer bumps are obstructed when viewed from the main surface direction of the support substrate, and the resin is not injected to the inner side. May remain. When the resin is injected in the subsequent process as described above, the gap cannot be completely filled, and workability is lowered.

  Therefore, a semiconductor element having a positive electrode and a negative electrode on the same surface side, a support substrate having a conductor wiring that faces the electrode through a conductive member, and at least a conductive material placed between the support substrate and the semiconductor element As a result of various studies, the inventor of the present invention has solved the above-mentioned problems by using a forming method including at least the following steps as a result of various studies in a method for manufacturing a semiconductor device having a resin layer surrounding a member.

  That is, A; a resin layer having elasticity in a cured state and having a through hole in which a part of the conductor wiring is exposed is formed on the support substrate by a method such as screen printing, stencil printing, or metal mask method. One step, B; a second step of forming at least two conductive members on the conductor wiring so as to correspond to the areas of the positive electrode and the negative electrode of the semiconductor element in the through hole provided in the resin layer, C A third step of joining the electrode of the semiconductor element and the conductive member by an ultrasonic bonding method by making the electrode of the semiconductor element face the conductive member and applying pressure in the direction of the support substrate.

  Alternatively, as another embodiment, instead of the configuration B, b: a step of forming at least two conductive members for the electrodes of the semiconductor element, instead of the configuration C, c: a conductive member and a conductor wiring The above-described problems have been solved by having a process of bonding the conductive member and the conductor wiring by facing each other and applying pressure in the direction of the support substrate. The step of forming at least two conductive members on the electrode of the semiconductor element can also be performed by a vapor deposition method, a sputtering method, or the like in the step of forming the semiconductor element.

  As described above, in the forming method according to the present invention, the workability can be greatly improved as compared with the prior art, particularly by forming the resin layer in advance by stencil printing before flip chip bonding. Hereafter, each structure in this form is explained in full detail.

[Semiconductor element]
The semiconductor element in the present invention may be a light emitting element, a light receiving element, a protective element that protects these semiconductor elements from destruction due to overvoltage, or a combination thereof. In particular, an LED chip will be described as a light emitting element. Examples of semiconductor light-emitting elements that constitute LED chips include those using various semiconductors such as ZnSe and GaN. When a fluorescent material is used, a short wavelength that can excite the fluorescent material efficiently is emitted. possible nitride semiconductor _{(in X Al Y Ga 1-} X-Y N, 0 ≦ X, 0 ≦ Y, X + Y ≦ 1) is preferably exemplified. Examples of the semiconductor structure include a homostructure having a MIS junction, a PIN junction, and a pn junction, a heterostructure, and a double heterostructure. Various emission wavelengths can be selected depending on the material of the semiconductor layer and the degree of mixed crystal. In addition, a single quantum well structure or a multiple quantum well structure in which the semiconductor active layer is formed in a thin film in which a quantum effect is generated can be used.

  When a nitride semiconductor is used, a material such as sapphire, spinel, SiC, Si, ZnO or the like is preferably used for the semiconductor substrate. In order to form a nitride semiconductor with good crystallinity with high productivity, it is preferable to use a sapphire substrate. A nitride semiconductor can be formed on the sapphire substrate by MOCVD or the like. A buffer layer of GaN, AlN, GaAlN or the like is formed on the sapphire substrate, and a nitride semiconductor having a pn junction is formed thereon.

  As an example of a light emitting device having a pn junction using a nitride semiconductor, a first contact layer formed of n-type gallium nitride, a first clad layer formed of n-type aluminum nitride / gallium on a buffer layer, Examples include a double hetero structure in which an active layer formed of indium / gallium nitride, a second cladding layer formed of p-type aluminum nitride / gallium, and a second contact layer formed of p-type gallium nitride are sequentially stacked. .

  Nitride semiconductors exhibit n-type conductivity without being doped with impurities. When forming a desired n-type nitride semiconductor, for example, to improve luminous efficiency, it is preferable to appropriately introduce Si, Ge, Se, Te, C, etc. as an n-type dopant. On the other hand, when forming a p-type nitride semiconductor, the p-type dopants such as Zn, Mg, Be, Ca, Sr, and Ba are doped. Since nitride semiconductors are not easily converted to p-type by simply doping with a p-type dopant, it is preferable to reduce resistance by heating in a furnace or plasma irradiation after introducing the p-type dopant.

  The p-type semiconductor layer is provided with a diffusion electrode for spreading the current input to the light emitting element over the entire surface of the p-type semiconductor layer. Furthermore, a p-side pedestal electrode and an n-side pedestal electrode connected to a conductive member such as a bump or a conductive wire are provided on the diffusion electrode and the n-type semiconductor layer, respectively.

  In this embodiment, the light-emitting element has a positive electrode on the p-type semiconductor side and a negative electrode on the n-type semiconductor side, and each electrode is positioned so that the negative electrode is between the positive electrodes when viewed from the light emission observation plane direction. Alternatingly arranged. This is preferable because not only can it be stably mounted on the support substrate having the conductor wiring according to the present invention, but also the current flowing between the electrodes becomes uniform, whereby the light emission from the light emitting surface of the light emitting element becomes uniform. Further, the n-type semiconductor is opposed to a corner portion on which the conductive member is placed and facing each other, and a constricted portion that narrows from the corner toward the inner side of the semiconductor element, as viewed from the light emission observation surface direction. It exposes so that it may have the extending part which connects the constricted parts which do. Thus, the light extraction efficiency of the light-emitting element can be improved by reducing the n-side semiconductor region that does not contribute to the light emission of the light-emitting element and relatively increasing the p-side semiconductor region. Hereinafter, the light-emitting element in this embodiment will be described in detail.

  8 and 9 are top views of the semiconductor light emitting element in this embodiment. In particular, FIG. 9 is a top view showing a state in which the p-side pedestal electrode 106 and the n-side pedestal electrode 107 are formed at the corner 111 of the n-type semiconductor and the p-side diffusion electrode 110 of the semiconductor light emitting device shown in FIG. It is. As shown in FIG. 9, the size of the p-side and n-side pedestal electrodes of the semiconductor light emitting device 101 corresponds to the size of each bump that is pressure-bonded at the time of flip-chip mounting. It is the minimum size that does not become larger than necessary. As a result, the metal used for the bumps does not block or absorb the light from the inside of the light emitting element, and the light extraction efficiency from the light emitting element can be improved. The p-side and n-side pedestal electrodes are arranged in an elliptical shape or a dot shape in accordance with the bumps arranged in a dot shape. On the other hand, in the region where the p-side and n-side pedestal electrodes are not formed, the diffusion electrode and the p-type or n-type semiconductor layer are exposed in consideration of light extraction from the light emitting element.

  The diffusion electrode, the p-side pedestal electrode, and the n-side pedestal electrode are formed by an evaporation method or a sputtering method after exposing the n-type semiconductor by a method such as etching. Here, the n-type semiconductor is formed so as to be exposed in stripes parallel to each other, and a diffusion electrode and a base electrode are formed in the light emitting element. This is preferable because it can be stably mounted on the support substrate having the conductor wiring according to the present invention, and the current flowing between the electrodes becomes uniform, whereby the light emission from the light emitting surface of the light emitting element becomes uniform.

  As shown in FIG. 8, when viewed from the light emission observation surface side, the exposed n-type semiconductor region has corners 111 at both corners of the light emitting element. At the corner 111, an n-side pedestal electrode 107 is formed, and a pair is provided so as to face each other. Furthermore, it has a constricted portion whose width gradually decreases from the corner 111 region toward the inner side of the light emitting element. Furthermore, the light-emitting element in this embodiment includes an extending portion 112 that linearly extends from a constricted portion at one corner where the n-side pedestal electrode is formed to a constricted portion at the other corner facing the corner. ing.

  Further, when viewed from the light emission observation plane direction, the width of the p-side diffusion electrode is wider than the width of the n-type semiconductor region exposed in the central portion of the light emitting element. Further, the n-type semiconductor is exposed between the p-side diffusion electrode or the p-type semiconductor, and the exposed n-type semiconductor (mainly the extending portion 112) and the p-side diffusion electrode 110 are alternately arranged. Therefore, the number of stripe columns of the p-side diffusion electrode provided in a stripe shape in the p-type semiconductor layer is larger than the number of columns of the n-type semiconductor region exposed in the stripe shape. As described above, the light emitting device according to this embodiment has the constricted portion and the extending portion, so that the area area of the p-side diffusion electrode can be increased, and the current input to the light emitting device is uniformly diffused. The amount of current can be increased. Therefore, the light-emitting element according to this embodiment can improve heat dissipation from the light-emitting element, and can form a light-emitting device with higher brightness than in the past.

  In general, in the light emitting element, how to dissipate heat generated in the semiconductor stacked structure from the p-type semiconductor layer to the lower layer becomes a problem in improving the heat dissipation of the element. Therefore, as described above, the heat dissipation of the light-emitting element is improved by making the conductor wiring such that the arrangement area of the bump bonded to the p-side pedestal electrode is larger than the arrangement area of the bump bonded to the n-side pedestal electrode. Can be made. Furthermore, the light extraction efficiency of the light-emitting element can be improved by reducing the exposed region of the n-type semiconductor that does not contribute to the light emission of the light-emitting element and relatively increasing the p-type semiconductor region and the p-side diffusion electrode region.

  In this embodiment, the material for the p-side and n-side pedestal electrodes preferably contains at least one of the materials contained in the bumps. That is, when the bump is made of Au, the material of the p-side and n-side pedestal electrode, particularly the uppermost layer material that becomes the bonding surface with the bump is Au or an alloy containing Au. For example, the p-side and n-side pedestal electrodes are made of W / Pt / Au or Rh / Pt / Au, and the thickness of each metal is several hundred to several thousand. In this specification, the symbol “A / B” indicates that the metal A and the metal B are sequentially laminated by a method such as sputtering or vapor deposition.

  The diffusion electrode formed on the entire surface of the p-type semiconductor layer is preferably made of a material that reflects light emitted from the light-emitting element toward the light-transmitting substrate of the light-emitting element. For example, Ag, Al, Rh, Rh / Ir can be mentioned. In addition, an oxide conductive film such as ITO (complex oxide of indium (In) and tin (Sn)), ZnO, or a metal thin film such as Ni / Au is formed as a translucent electrode on the entire surface of the p-type semiconductor layer. Can be made.

  When a transparent insulating substrate such as sapphire is used for the substrate, both positive and negative electrodes are provided on the same surface side by cutting the semiconductor wafer into chips of the desired size and shape after forming both positive and negative electrodes The nitride semiconductor chip thus obtained is obtained, and a light emitting element can be formed.

[Support substrate]
The support substrate in this embodiment is a member for fixing and supporting a flip-chip mounted light emitting element on which conductor wiring is provided at least on a surface facing the electrode of the light emitting element. Furthermore, when the support substrate is electrically connected to the lead electrode, the conductor wiring is provided by the conductive member from the surface facing the light emitting element to the surface facing the lead electrode. The conductor wiring in this embodiment is formed such that a pair of positive and negative wiring patterns are insulated and separated from the support substrate and surround one another. In particular, the conductor wiring in this embodiment includes a conductive member that is bonded to one of the electrodes of the light emitting element when viewed from the direction perpendicular to the main surface of the support substrate (that is, the direction of the light emission observation surface of the light emitting device). It has a 1st area | region and the 2nd area | region which has the electroconductive member which surrounds at least one part of this 1st area | region, and is joined to the other electrode of a light emitting element. For example, the conductor wiring in this embodiment surrounds at least a part of the positive polarity region having a bump bonded to the positive electrode of the light emitting element and emits light when viewed from the light emission observation surface direction of the light emitting device. A negative polarity region having a bump bonded to the negative electrode of the element, and a region in which the bump is placed in the positive polarity region is a region in which the conductive member is placed in the negative polarity region Wider. Furthermore, the number of bumps in the positive polarity region is greater than the number of bumps in the negative polarity region.

  The metal used as the material for the conductor wiring is Au or Al which is a silver-white metal. A silver-white metal having a high reflectance is preferable because light from the light-emitting element is reflected in a direction opposite to the support substrate and the light extraction efficiency of the light-emitting device is improved. Here, the metal used as the material of the conductor wiring is preferably selected in consideration of good adhesion between the metals, so-called wettability. For example, when an electrode of an LED chip containing Au is bonded by ultrasonic die bonding via an Au bump, the conductor wiring is made of Au or an alloy containing Au.

  The material of the support substrate is preferably aluminum nitride with respect to a light emitting element having substantially the same thermal expansion coefficient as that of the nitride semiconductor light emitting element. By using such a material, the influence of thermal stress generated between the support substrate and the light-emitting element can be reduced. Alternatively, the material of the support substrate is preferably silicon which can be provided with the function of an electrostatic protection element and is inexpensive.

  As an example of a submount having the function of a protection element, for example, a p-type semiconductor region is formed by selectively implanting impurity ions into an n-type silicon substrate of a Si diode element, and a reverse breakdown voltage is predetermined. Set the voltage to. On the p-type semiconductor region and the n-type silicon substrate (n-type semiconductor region) of this Si diode element, a p-electrode and an n-electrode made of Al are formed, and a part of the p-electrode serves as a bonding pad. The part becomes a bonding pad. In addition, an n electrode made of Au for electrically connecting to a lead electrode of a support substrate such as a package is formed on the lower surface of the n-type silicon substrate without using a part of the n electrode as a bonding pad. Also good. Thereby, the n electrode side can be electrically connected without using a wire.

Another example of a submount having a function of a protection element is a submount that is a Si diode element and in which a plurality of n-type semiconductor regions and p-type semiconductor regions are formed in one main surface direction. Further, a reflective film made of silver white metal (eg, Al, Ag) is formed so as to be electrically connected to the plurality of semiconductor regions. Moreover, a partial region of the reflective film can be used as an electrode by depositing or sputtering a metal material. The electrode can be bump-mounted or can be directly joined to the electrode of the light emitting element. In addition, the p-type semiconductor region and a part of the n-type semiconductor region where the reflective film is not formed are covered with an insulating film such as SiO ₂ . The submount can have an electrode on which a metal material is deposited or sputtered on the back surface.

  The semiconductor light emitting element is flip-chip mounted on a submount having the function of the protection element. That is, after the Au bump is placed on the electrode of the n-type semiconductor region of the submount, the p-side pedestal electrode and the n-side pedestal electrode of the semiconductor light emitting element are opposed to each other via the Au bump. Next, the semiconductor light emitting element and the submount member are electrically and mechanically connected by applying ultrasonic waves, heat, and a load. The circuit configuration of the Si diode element and the semiconductor light emitting element of the submount member is a parallel connection of a bidirectional diode formed by connecting two diodes in series and the semiconductor light emitting element. As a result, the semiconductor light emitting element can be protected from overvoltage in the forward direction and the reverse direction, and can be a highly reliable semiconductor device.

  Furthermore, it is preferable to provide a hole or a concavo-convex shape with respect to the supporting substrate in a place where the mounting of the light emitting element is not adversely affected. By providing such a shape, heat from the semiconductor element can be efficiently radiated from the support. It is preferable to provide at least one through hole in the thickness direction of the support substrate so that the conductor wiring extends on the inner wall surface of the through hole since heat dissipation is further improved. Note that the conductor wiring of the support substrate in this embodiment is connected to the lead electrode via the conductive wire, but the conductor wiring applied from one main surface to the other main surface and the lead electrode are connected by a bonding member. It does not matter as a structure to do.

  The connection between the conductor wiring provided on the support substrate and the electrode of the semiconductor element is performed by ultrasonic waves using a bonding member such as Au, eutectic material (Au—Sn, Ag—Sn), solder (Pb—Sn), lead-free solder or the like. Join. Moreover, when it is set as the structure which connects a conductor wiring and a lead electrode directly, the connection of the electroconductive pattern provided in the back surface of the support substrate and lead electrode is performed, for example by joining members, such as Au paste and Ag paste.

[Conductive member]
In the present invention, the conductive member used for joining the positive and negative electrodes of the LED chip and the conductor wiring of the support substrate is a metal material called a bump having at least one kind of the same material as both the positive and negative electrodes and the conductor wiring. For example, it is a bump made of an Au bump, Sn-Pb, an alloy containing Au, lead-free solder or the like generally used in ultrasonic bonding. Here, when a bump that partially absorbs light from the light emitting element, such as Au, is selected, it is preferable that silver-white plating is formed on the surface of the bump. Alternatively, it is preferable to increase the concentration of the diffusing agent in the resin layer near the bump. Note that these structures are not particularly essential when the light-emitting element includes a highly reflective silver foil metal. The bump is preferably a metal element contained in the electrode of the LED chip in the present invention, and contains at least one metal element contained in the conductor wiring exposed from the bottom of the through hole of the resin layer. By doing in this way, since the joint strength of the electrode of a light emitting element, a conductive member, and conductor wiring improves, it is preferable. In particular, the conductive member in the present invention is provided in an appropriate amount on the conductor wiring of the support substrate, so that the conductive member connected to either the positive electrode or the negative electrode is connected to the other electrode in the direction parallel to the support substrate. It is preferably larger than the conductive member. For example, the plurality of conductive members bonded to the upper part of the active layer in the light emitting element, that is, the electrodes of the p-type semiconductor layer, are parallel to the main surface of the support substrate as compared to the plurality of conductive members provided to the other electrodes. When viewed from the direction, it is preferable to increase the size per piece. With such a configuration, heat dissipation from the light emitting element can be improved. Further, when the number of bumps is adjusted, the bonding strength between the positive and negative electrodes of the LED chip and the support substrate is increased, and a highly reliable light-emitting device can be obtained.

[Resin layer]
(Resin layer in the first form)
The resin layer in this embodiment is formed of a member having elasticity in the cured state, for example, a silicone resin. As a member having elasticity in the hardened state, when the electrode of the semiconductor element and the conductor wiring are bonded via the bump, considering the number of bumps, the bonding force is the elastic force of the contracted member. A member having elasticity that is sufficiently larger than that and does not cause a decrease in bonding strength is selected.

  The resin layer formed on the support substrate before mounting the semiconductor element has at least two through holes having a shape (tapered shape) that widens in the opening direction from the bump formation portion on the support substrate. It is a resin layer having a thickness that can be surrounded. The entire outer shape of the resin layer may be any shape such as a cylindrical shape or a polygonal column shape in addition to a rectangular parallelepiped shape when viewed from the main surface direction of the support substrate, and there are a plurality of through holes. Moreover, the shape of the through hole before mounting the LED chip can be various shapes such as a conical shape, a triangular pyramid shape, and a polygonal pyramid shape such as a quadrangular pyramid shape.

  In this embodiment, hardness (JIS-A) 32 after curing and a colorless and transparent silicone resin are used as a member having elasticity in the cured state, but the present invention is not limited to this. For example, a silicone resin or an epoxy resin containing a filler such as aluminum oxide or silicon oxide can be given. In particular, a silicone resin is preferable because it does not change color or deteriorate even when a light emitting element having a large calorific value is formed. The amount of resin is an amount that can fill a gap formed between the positive and negative electrodes of the light emitting element and the support substrate. Since the silicone resin is soft and rich in elasticity in the cured state, after the resin layer is molded, when the LED chip is ultrasonically bonded so as to be pressed from the substrate side, the resin layer slightly deforms and is applied to the LED chip surface. The resin layer is in close contact, and the resin layer is deformed into a state in which there is no gap between the positive and negative electrodes of the LED chip and the support substrate. Accordingly, there is almost no air between the electrode surface or side surface of the LED chip and the resin, and the light emitted from the light emitting element is refracted by the air in a complicated manner, or the heat from the light emitting element has low thermal conductivity. Therefore, the light extraction efficiency is improved and the heat dissipation effect is enhanced. Conventionally, after die-bonding the LED chip to the support substrate, it is necessary to pour molten resin from the lateral direction of the LED chip in order to fill the gap formed between the electrode surface of the LED chip and the support substrate. However, pouring the resin completely without gaps is a very time-consuming work, which reduces workability. However, in this invention, workability | operativity can be improved by die-bonding a LED chip after shape | molding a reflection layer in advance on a support substrate with resin.

  The resin layer having elasticity in the cured state can be formed by stencil printing, screen printing, metal mask printing, or photoresist. In addition, it is molded using a molding die having various shapes (inverse tapered shape such as conical shape, triangular pyramid shape, quadrangular pyramid shape). In particular, when flip-chip mounting a plurality of light-emitting elements, the above-described formation method is preferable because it is excellent in mass productivity.

  The resin layer in this embodiment can contain a diffusing agent in order to improve the light emission luminance of the light emitting device. The diffusing agent contained in the resin layer reduces the scattering and absorption of the light emitted from the light emitting element to the light emission observation surface side, and scatters more light toward the resin layer side, thereby reducing the light emitted from the light emitting device. The light emission brightness is improved. Examples of the diffusing agent include inorganic members such as barium oxide, barium titanate, barium oxide, silicon oxide, titanium oxide, and aluminum oxide, organic members such as melamine resin, CTU guanamine resin, and benzoguanamine resin, and mixtures thereof. Preferably used.

  Similarly, various colorants can be added in order to have a filter effect of cutting unnecessary wavelengths from extraneous light and light emitting elements. Further, a fluorescent material that emits fluorescence when excited by the emission wavelength from the light emitting element can be contained. Moreover, various fillers, such as an alumina and a silica, can also be contained as a heat conductive material which improves the heat dissipation characteristic of resin. Furthermore, in order to relieve the thermal stress of the resin layer, aluminum nitride, aluminum oxide, a composite mixture thereof or the like may be further mixed into the resin layer. When the semiconductor element and the resin layer are covered with the sealing member, the resin layer preferably has a higher thermal conductivity than the sealing member. With this configuration, the heat generated by the semiconductor element is radiated toward the support substrate mainly via the resin layer. Therefore, a semiconductor device with high heat dissipation can be obtained.

(Resin layer in the second form)
When a plurality of light emitting elements are flip-chip mounted on the same support substrate, a gap is generated between the light emitting element and another light emitting element adjacent to the light emitting element. If these light-emitting elements are to be covered with a wavelength conversion member, the wavelength conversion member enters the gap, and the amount of phosphor present in the gap is relatively large compared to the periphery of other light-emitting elements. Become. Therefore, the light emitting device cannot observe light emission with uniform chromaticity in all directions.

  Therefore, in this embodiment, after forming a light-transmitting resin layer that seals the gap, the wavelength conversion member is formed with a uniform thickness so as to cover the light emission surface side of the plurality of light-emitting elements. As a result, the thickness of the wavelength conversion member itself irradiated with light from the light emitting element (actually, the amount of phosphor contained) is substantially equal on the emission observation surface side. Therefore, the light-emitting device of this embodiment can be a light-emitting device having excellent optical characteristics with uniform chromaticity depending on the emission observation direction. Hereinafter, the resin layer in the second embodiment will be described in detail with reference to the drawings.

  10 and 11 are schematic cross-sectional views showing an example of the light emitting device according to this embodiment. In this embodiment mode, a gap generated between the light-emitting elements mounted with the flip chip is sealed with a light-transmitting resin layer 104a. Furthermore, the light emitting surfaces of the light emitting elements (for example, the light-transmitting substrate surface of the LED chip) and the top surface of the resin layer absorb at least part of the light from the light emitting elements and emit fluorescence having different wavelengths. It is covered with a wavelength conversion member 115 containing a body.

  The resin layer 104a in this embodiment is preferably formed by filling a resin with a gap between a light emitting element and another light emitting element adjacent to the light emitting element and curing the resin. For example, the resin filling method may be stencil printing, screen printing, potting or metal mask printing. Or it is not limited to such a formation method, You may arrange | position the translucent member shape | molded by another process so that it may fit in the said clearance gap instead of the resin layer 104a. Alternatively, as described above, the resin layer 104 formed before flip-chip mounting (that is, the resin layer in the first embodiment) may be formed in the portion where the gap is generated, and may be used as the resin layer 104a in this embodiment.

  The resin material of the resin layer in this embodiment is the same as the resin layer in the first embodiment described above. Moreover, in order to diffuse the light radiate | emitted from the side surface of the light emitting element in the direction of the wavelength conversion member, the above-mentioned diffusing agent can also be contained. Moreover, in order to improve the heat conductivity of a resin layer, the above-mentioned filler can also be contained.

  As shown in FIG. 10, the resin layer 104a in this embodiment preferably covers at least the side surface of the light emitting element. By covering the side surface in this manner, the wavelength conversion member 115 can be prevented from entering the side surface side of the light emitting element in the forming process. The top surface of the resin layer 104a is preferably substantially flush with the top surface of the light emitting element (for example, the light-transmitting substrate surface of the LED chip).

  Furthermore, the light-transmitting resin layer may not only seal the gap, but may further cover the main surface side, which is the light emitting surface of the light emitting element, with a uniform thickness. FIG. 11 is a schematic cross-sectional view showing an example of the light emitting device according to this embodiment. As shown in FIG. 11, for example, a resin layer that seals a gap between the light emitting elements with a resin layer 104 a and covers a light emitting surface of the light emitting elements, for example, a translucent substrate surface of an LED chip. After forming 104b, the wavelength conversion member 115 is laminated with a uniform thickness on the resin layer 104b. Thereby, it is possible to obtain a light emitting device having excellent optical characteristics with uniform chromaticity depending on the light emission observation direction. In addition, by separating the light emitting element and the phosphor through the resin layer, deterioration of the phosphor due to heat generation and a decrease in light emission luminance thereof can be suppressed, and a light emitting device with high light emission efficiency can be obtained.

[Sealing member]
In the present invention, the sealing member seals the semiconductor element and the resin layer, fills the gap between the semiconductor element and the resin layer, and further protects the semiconductor element and the like from external force, dust, moisture, and the like from the external environment. Can be provided. The sealing member can select various directivity characteristics of light emitted from the light emitting element by changing the shape. That is, the lens effect can be obtained by making the shape of the sealing member a convex lens shape or a concave lens shape. Therefore, as desired, various shapes such as a dome shape, an elliptical shape as viewed from the light emission observation surface side, a cube, and a triangular prism can be selected.

  As a specific sealing member for an optical semiconductor element, an organic substance such as an epoxy resin, an acrylic resin, an imide resin, or a silicone resin excellent in light resistance and translucency, or an inorganic substance such as glass can be selected. Further, aluminum oxide, barium oxide, barium titanate, silicon oxide, or the like can be contained in the sealing member for the purpose of diffusing light from the light emitting element. Similarly, various colorants can be added in order to have a filter effect of cutting unnecessary wavelengths from extraneous light and light emitting elements. Further, a fluorescent material that emits fluorescence when excited by the emission wavelength from the light emitting element is contained. Moreover, various fillers that relieve internal stress of the sealing resin can also be contained.

[Anisotropic conductive layer]
In this embodiment, the light-emitting element is mounted so that the electrode forming surface side on which a pair of positive and negative electrodes is provided is opposed to the conductor wiring of the support substrate, and flip-chip mounting is performed through a continuous anisotropic conductive layer. Good. That is, instead of the resin layer described above, a semiconductor device in which an anisotropic conductive layer is formed at the same position as the resin layer may be used.

In the present invention, the anisotropic conductive layer is capable of efficiently reflecting light from the light emitting element in an adhesive made of an organic or inorganic material having thermoplasticity or thermosetting property, and has conductivity. Conductive particles are dispersed. Specific examples of the conductive particles include Ni particles and those having a metal coat made of Ni, Au, or the like on the surface of particles such as plastic and silica. In the present invention, the content of the conductive particles is preferably 0.3 vol% or more and 1.2 vol% or less with respect to the adhesive, and such an anisotropic conductive layer is heated and pressed when a light emitting element is mounted. Thus, high conductivity can be easily obtained between the film thickness directions of the layers. On the other hand, since the filling amount of the conductive particles is small in the plane direction of the layer, a short circuit between adjacent electrodes due to contact between the conductive particles does not occur, and high insulation can be maintained. More preferably, when the number of particles per mm ³ in the anisotropic conductive layer is 3500 or more and 5000 or less, a small light-emitting element having a narrow pitch between the electrodes can be reliably connected to the external electrode on the base surface with a fine connection. can do. Furthermore, light from the light emitting element can be efficiently reflected and scattered by the anisotropic conductive layer.

  In the present embodiment, the anisotropic conductive layer seals between the light emitting element surface and the conductor wiring which face each other, and directly covers a part of the side end face of the light emitting element. Thereby, a part of the light emitted from the light emitting element is taken into the anisotropic conductive layer, reflected and scattered by the conductive particles in the anisotropic conductive layer, and the light is extracted in the front direction of the light emitting device. it can. In addition, there is no gap at all between the electrode surface of the LED chip and the conductor wiring, so that the light extraction efficiency is improved and the heat dissipation effect is enhanced.

  As a method for forming a light emitting device according to an embodiment of the present invention, a liquid anisotropic conductive layer material is suitable for covering a bump formed in advance on the surface of an external electrode and making it spread to the size of a chip. The method of sonic bonding is taken. With such a forming method, since the electrode surface of the chip and the external electrode surface are bonded through both the adhesive and the bumps included in the anisotropic conductive layer, the bonding strength is doubled. Furthermore, even when an external force is applied to the entire light-emitting device during the process of bending the electrode into a desired shape, the stress is relieved by the anisotropic conductive layer containing a resin having high elasticity, and the above bonding is performed. Therefore, a highly reliable light-emitting device can be obtained.

[Phosphor]
In the present invention, when a light emitting element is used as a semiconductor element, in the semiconductor element structure of the light emitting element, a sealing member that covers the light emitting element, and a die bond that fixes the submount on which the light emitting element is flip-chip mounted to another support. Ingredients such as inorganic phosphors and organic phosphors in each component and / or around each component such as the above-mentioned resin layer, support substrate such as submount and package provided around the light emitting element and the support substrate Various fluorescent materials can be arranged or contained. In particular, the fluorescent material combined with the sealing member is provided in the form of a sheet so as to cover the surface of the sealing member on the light emission observation surface side, and the position separated from the light emission observation surface side surface of the sealing member and the light emitting element In addition, it may be provided inside the sealing member as a phosphor-containing layer, sheet, cap or filter. In addition, the wavelength conversion member formed so as to cover the light-emitting element mounted on the flip chip may be formed by screen printing or stencil printing using a metal mask or a screen plate, using a binder containing a phosphor. preferable. By forming in this way, it is possible to easily form a wavelength conversion member having a uniform film thickness around the light emitting element.

  The phosphor that can be used in the present invention absorbs part of visible light and ultraviolet light emitted from the light emitting element, and emits light having a wavelength different from the wavelength of the absorbed light. In particular, the phosphor used in this embodiment refers to a phosphor that emits a wavelength-converted light that is excited by at least light emitted from the light-emitting element, and constitutes a wavelength conversion member together with a binder that fixes the phosphor. To do. As the binder, for example, a translucent resin such as an epoxy resin, or a translucent inorganic material generated by a sol-gel method using a highly light-resistant silicone resin or metal alkoxide as a starting material can be used.

  When the light from the light emitting element and the light emitted from the phosphor are in a complementary color relationship or the like, white mixed color light can be emitted by mixing each light. Specifically, the light emitted from the light emitting element and the phosphor light excited and emitted thereby correspond to the three primary colors of light (red, green, and blue), or the blue light emitted from the light emitting element. And yellow light of a phosphor that is excited to emit light.

  The emission color of the light-emitting device can be adjusted in various ways such as the ratio between the phosphor and various members such as various resins and glass that act as a binder for the phosphor, the specific gravity of the phosphor, the amount and shape of the phosphor, and By selecting the light emission wavelength of the light emitting element, it is possible to change the color temperature of the mixed color light and provide an arbitrary white color tone such as light in the light bulb color region. It is preferable that the light from the light emitting element and the light from the phosphor efficiently pass through the mold member outside the light emitting device.

  Since such a phosphor settles under its own weight in the gas phase or liquid phase, it is dispersed and uniformly released in the gas phase or liquid phase, and in particular in the liquid phase, the suspension is allowed to stand, A layer having a phosphor with higher uniformity can be formed. Furthermore, a desired phosphor amount can be formed by repeating a plurality of times as desired.

  Two or more kinds of phosphors formed as described above may be present in a single-layer wavelength conversion member on the surface of the light-emitting device, or one or two of each of the two-layer wavelength conversion member. There may be more than one type. In this way, white light can be obtained by mixing colors from different types of phosphors. In this case, it is preferable that the average particle diameters and shapes of the phosphors are similar in order to better mix the light emitted from the phosphors and reduce color unevenness.

  Here, the particle size of the phosphor in the present specification is a value obtained by a volume-based particle size distribution curve, and the volume-based particle size distribution curve can measure the particle size distribution of the phosphor by a laser diffraction / scattering method. It is what Specifically, in an environment where the temperature is 25 ° C. and the humidity is 70%, the phosphor is dispersed in a sodium hexametaphosphate aqueous solution having a concentration of 0.05%, and a laser diffraction particle size distribution analyzer (SALD-2000A) It was obtained by measuring in a particle size range of 0.03 μm to 700 μm.

  The phosphor used in the present embodiment is a combination of an aluminum garnet phosphor typified by a YAG phosphor and a phosphor capable of emitting red light, particularly a nitride phosphor. Can also be used. These YAG phosphors and nitride phosphors may be mixed and contained in the wavelength conversion member, or may be separately contained in the wavelength conversion member composed of a plurality of layers. Hereinafter, each phosphor will be described in detail.

(Aluminum / garnet phosphor)
The aluminum garnet phosphor used in the present embodiment includes Al and at least one element selected from Y, Lu, Sc, La, Gd, Tb, Eu, and Sm, and Ga and In. It is a phosphor that contains one selected element and is activated by at least one element selected from rare earth elements, and is a phosphor that emits light when excited by visible light or ultraviolet light emitted from an LED chip. .

For example, YAlO ₃ : Ce, Y ₃ Al ₅ O ₁₂ : Ce, Y ₄ Al ₂ O ₉ : Ce, (Y _0.8 Gd _0.2 ) ₃ Al ₅ O ₁₂ : Ce, Y ₃ (Al _{0.8 Ga 0.2) 5 O 12: Ce} , Tb 2.95 Ce 0.05 Al 5 O 12, Y 2.90 Ce 0.05 Tb 0.05 Al 5 O 12, Y 2.94 Ce 0.05 Pr _{0.01 Al 5 O 12, Y 2.90} Ce 0.05 Pr 0.05 Al 5 O 12 and the like. Further, in the present embodiment, two or more types of yttrium / aluminum oxide phosphors (hereinafter referred to as “YAG / aluminum garnet phosphors”) containing Y and activated by Ce or Pr and having different compositions. Called "system phosphor"))). In particular, at the time of high luminance and long-term use _{(Re 1-x Sm x)} 3 (Al 1-y Ga y) 5 O 12: Ce (0 ≦ x <1,0 ≦ y ≦ 1, where, Re Is at least one element selected from the group consisting of Y, Gd, and La).

_{(Re 1-x Sm x)} 3 (Al 1-y Ga y) 5 O 12: Ce phosphor, for garnet structure, heat, resistant to light and moisture, the peak of the excitation spectrum can be like in the vicinity of 470nm Can do. In addition, the emission peak is in the vicinity of 530 nm, and a broad emission spectrum that extends to 720 nm can be provided.

In the light emitting device of the present invention, the phosphor may be a mixture of two or more phosphors. That is, speaking the YAG fluorescent material described above, Al, Ga, Y, the content of La and Gd and Sm are two or more kinds of _{(Re 1-x Sm x)} 3 (Al 1-y Ga y) 5 O ₁₂ : Ce phosphors can be mixed to increase RGB wavelength components. At present, there are variations in the emission wavelength of the semiconductor light emitting device, so that two or more kinds of phosphors can be mixed and adjusted to obtain a desired white mixed color light or the like. Specifically, by adjusting the amount of phosphors having different chromaticity points in accordance with the emission wavelength of the light emitting element, the arbitrary points on the chromaticity diagram connected between the phosphors and the light emitting element are caused to emit light. be able to.

  Blue light emitted from a light emitting device using a nitride compound semiconductor in the light emitting layer, green light emitted from a phosphor whose body color is yellow to absorb blue light, red light, When mixed color display is performed, a desired white light emission color display can be performed. In order that the light emitting device according to this embodiment emits the mixed color light, the phosphor powder and bulk are placed in various resins such as epoxy resin, acrylic resin or silicone resin, and translucent inorganic materials such as silicon oxide and aluminum oxide. It can also be contained. Such phosphors can be used in various ways depending on the application, such as dot-like and layer-like ones that are formed thin enough to transmit light from the light-emitting element. By adjusting the ratio, coating, and filling amount of the phosphor and the translucent inorganic substance and selecting the emission wavelength of the light emitting element, it is possible to provide an arbitrary color tone such as a light bulb color including white.

  In addition, by arranging two or more kinds of phosphors in order with respect to the incident light from the light emitting element, a light emitting device capable of efficiently emitting light can be obtained. That is, on a light emitting element having a reflective member, a color conversion member containing a phosphor that has an absorption wavelength on the long wavelength side and can emit light at a long wavelength, and an absorption wavelength on the longer wavelength side that has a longer wavelength. The reflected light can be used effectively by laminating a color conversion member capable of emitting light at a wavelength.

When a YAG phosphor is used, sufficient light resistance with high efficiency even when it is placed in contact with or close to a light emitting element having an irradiance of (Ee) = 0.1 W · cm ^{−2 to} 1000 W · cm ⁻² The light emitting device can be made to have the property.

  The cerium-activated YAG-based phosphor used in this embodiment and capable of emitting green light has a garnet structure and is resistant to heat, light, and moisture, and the peak wavelength of the excitation absorption spectrum is in the vicinity of 420 nm to 470 nm. Can be made. Also, the emission peak wavelength λp is near 510 nm, and has a broad emission spectrum that extends to the vicinity of 700 nm. On the other hand, the YAG phosphor that emits red light, which is an yttrium-aluminum oxide phosphor activated by cerium, has a garnet structure, is resistant to heat, light and moisture, and has a peak wavelength of 420 nm in the excitation absorption spectrum. To about 470 nm. Further, the emission peak wavelength λp is in the vicinity of 600 nm, and has a broad emission spectrum that extends to the vicinity of 750 nm.

  Of the composition of YAG phosphors with a garnet structure, the emission spectrum is shifted to the short wavelength side by substituting part of Al with Ga, and part of Y of the composition is replaced with Gd and / or La. By doing so, the emission spectrum shifts to the long wavelength side. In this way, it is possible to continuously adjust the emission color by changing the composition. Therefore, an ideal condition for converting white light emission by using blue light emission of the nitride semiconductor is provided such that the intensity on the long wavelength side is continuously changed by the composition ratio of Gd. If the substitution of Y is less than 20%, the green component is large and the red component is small, and if it is 80% or more, the redness component is increased but the luminance is drastically decreased. Similarly, the excitation absorption spectrum is shifted to the short wavelength side by substituting part of Al with Ga in the composition of the YAG phosphor having a garnet structure. By substituting a part of Gd and / or La, the excitation absorption spectrum is shifted to the longer wavelength side. The peak wavelength of the excitation absorption spectrum of the YAG phosphor is preferably on the shorter wavelength side than the peak wavelength of the emission spectrum of the light emitting element. With this configuration, when the current input to the light emitting element is increased, the peak wavelength of the excitation absorption spectrum substantially matches the peak wavelength of the emission spectrum of the light emitting element, so that the excitation efficiency of the phosphor is not reduced. Thus, a light emitting device in which the occurrence of chromaticity deviation is suppressed can be formed.

  The aluminum garnet phosphor can be manufactured by the following method. First, phosphors use oxides or compounds that easily become oxides at high temperatures as raw materials for Y, Gd, Ce, La, Al, Sm, Pr, Tb and Ga, and they are added in a stoichiometric ratio. Mix thoroughly to obtain the raw material. Or a coprecipitated oxide obtained by calcining a solution obtained by coprecipitation of oxalic acid with a solution obtained by dissolving a rare earth element of Y, Gd, Ce, La, Sm, Pr, and Tb in an acid at a stoichiometric ratio with acid; Aluminum and gallium oxide are mixed to obtain a mixed raw material. An appropriate amount of fluoride such as ammonium fluoride is mixed with this as a flux and packed in a crucible, fired in air at a temperature range of 1350 to 1450 ° C. for 2 to 5 hours to obtain a fired product, and then the fired product in water. It can be obtained by ball milling, washing, separating, drying and finally passing through a sieve. Further, in the method for manufacturing a phosphor according to another embodiment, a first firing step in which a mixture composed of a mixture of phosphor materials and a flux is mixed in the atmosphere or in a weak reducing atmosphere, and in a reducing atmosphere. It is preferable to perform the baking in two stages, which includes the second baking step performed in step (b). Here, the weak reducing atmosphere refers to a weak reducing atmosphere set to include at least the amount of oxygen necessary in the reaction process of forming a desired phosphor from the mixed raw material. By performing the first firing step until the formation of the phosphor structure is completed, blackening of the phosphor can be prevented and a decrease in light absorption efficiency can be prevented. In addition, the reducing atmosphere in the second firing step refers to a reducing atmosphere stronger than the weak reducing atmosphere. By firing in two stages in this way, a phosphor with high absorption efficiency at the excitation wavelength can be obtained. Therefore, when a light emitting device is formed with the phosphor thus formed, the amount of the phosphor necessary for obtaining a desired color tone can be reduced, and a light emitting device with high light extraction efficiency can be formed. Can do.

  Aluminum and garnet phosphors activated with two or more types of cerium having different compositions may be mixed or used independently. When the phosphors are arranged independently, it is preferable to arrange the phosphors in the order of the phosphor that easily absorbs and emits light from the light emitting element on the shorter wavelength side and the phosphor that easily absorbs and emits light on the longer wavelength side. This makes it possible to efficiently absorb and emit light.

(Lutetium / Aluminum / Garnet phosphor)
The lutetium / aluminum / garnet phosphor is a general formula (Lu _1-ab R _a M _b ) ₃ (Al _1-c Ga _c ) ₅ O ₁₂ (provided that R is at least one element in which Ce is essential). The above rare earth elements, M is at least one element selected from Sc, Y, La, and Gd, and 0.0001 ≦ a ≦ 0.5, 0 ≦ b ≦ 0.5, 0.0001 ≦ a + b <1, 0 ≦ c ≦ 0.8.) For example, the composition formula is (Lu _0.99 Ce _0.01 ) ₃ Al ₅ O ₁₂ , (Lu _0.90 Ce _0.10 ) ₃ Al ₅ O ₁₂ , (Lu _0.99 Ce _0.01 ) ₃ (Al a phosphor represented by _0.5 Ga _{0.5) 5} O _12.

  The lutetium / aluminum / garnet phosphor (hereinafter sometimes referred to as “LAG phosphor”) is obtained as follows. As a phosphor raw material, a lutetium compound, a rare earth element R compound, a rare earth element M compound, an aluminum compound, and a gallium compound are used, and each compound is weighed and mixed so as to have the ratio of the above general formula, or these are mixed. Flux is added to the phosphor material and mixed to obtain a material mixture. After filling this raw material mixture into a crucible, it is fired at 1200 to 1600 ° C. in a reducing atmosphere, and after cooling, the phosphor of the present invention represented by the above general formula is obtained by dispersion treatment.

  As the phosphor raw material, an oxide or a compound such as a carbonate or hydroxide that becomes an oxide by thermal decomposition is preferably used. Moreover, the coprecipitate which contains all or one part of each metal element which comprises a fluorescent substance can also be used as a fluorescent substance raw material. For example, when an aqueous solution such as alkali or carbonate is added to an aqueous solution containing these elements, a coprecipitate can be obtained, which can be used after being dried or thermally decomposed. Moreover, as a flux, a fluoride, a borate, etc. are preferable, and it adds in 0.01-1.0 weight part with respect to 100 weight part of fluorescent substance raw materials. The firing atmosphere is preferably a reducing atmosphere in which the activator cerium is not oxidized. A mixed gas atmosphere of hydrogen and nitrogen having a hydrogen concentration of 3.0% by volume or less is more preferable. The firing temperature is preferably 1200 to 1600 ° C., and a phosphor having a target center particle diameter can be obtained. More preferably, it is 1300-1500 degreeC.

  In the above general formula, R is an activator and is at least one or more rare earth elements essential for Ce, specifically, Ce, La, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, and Lr. R may be Ce alone, but may contain Ce and at least one element selected from rare earth elements other than Ce. This is because rare earth elements other than Ce act as coactivators. Here, it is preferable that Ce contains 70 mol% or more of Ce with respect to the total amount of R. The a value (R amount) is preferably 0.0001 ≦ a ≦ 0.5. If the value is less than 0.0001, the light emission luminance is lowered, and if it exceeds 0.5, the light emission luminance is lowered by concentration quenching. More preferably, 0.001 ≦ a ≦ 0.4, and still more preferably 0.005 ≦ a ≦ 0.2. The b value (M amount) is preferably 0 ≦ b ≦ 0.5, more preferably 0 ≦ b ≦ 0.4, and still more preferably 0 ≦ b ≦ 0.3. For example, when M is Y and the b value exceeds 0.5, the emission luminance due to excitation of long-wavelength ultraviolet light to short-wavelength visible light, particularly 360 to 410 nm is extremely lowered. The c value (Ga content) is preferably 0 ≦ c ≦ 0.8, more preferably 0 ≦ c ≦ 0.5, and still more preferably 0 ≦ c ≦ 0.3. When the c value exceeds 0.8, the emission wavelength shifts to a short wavelength, and the emission luminance decreases.

  The center particle size of the LAG phosphor is preferably in the range of 1 to 100 μm, more preferably in the range of 5 to 50 μm, and still more preferably in the range of 5 to 15 μm. Phosphors smaller than 1 μm tend to form aggregates. On the other hand, the phosphor having a particle size in the range of 5 to 50 μm has high light absorptivity and conversion efficiency, and easily forms a light conversion member. As described above, the mass productivity of the light-emitting device is improved by including a phosphor having a large particle diameter and having optically excellent characteristics. Moreover, it is preferable that the fluorescent substance which has the said center particle size value is contained frequently, and 20%-50% of frequency values are preferable. By using a phosphor having a small variation in particle size in this way, a light emitting device having a favorable color tone with more suppressed color unevenness can be obtained.

  Since the lutetium / aluminum / garnet phosphor is efficiently excited and emitted by ultraviolet rays or visible light in a wavelength region of 300 nm to 550 nm, it can be effectively used as a phosphor contained in the light conversion member. Furthermore, by using a plurality of types of LAG phosphors having different composition formulas or LAG phosphors together with other phosphors, the emission color of the light emitting device can be variously changed. A conventional light emitting device that emits white light by mixing blue light emitted from a semiconductor light emitting element and light emitted from a phosphor emitting yellow light by absorbing the light emitted from the light emitting element. Since a part of the light is used through, there is an advantage that the structure itself can be simplified and the output can be easily improved. On the other hand, since the light emitting device emits light by mixing two colors, the color rendering properties are not sufficient, and improvement is required. Therefore, a light emitting device that emits white color mixed light using a LAG phosphor can improve its color rendering as compared with a conventional light emitting device. Further, since the LAG phosphor has excellent temperature characteristics as compared with the YAG phosphor, a light emitting device with little deterioration and color shift can be obtained.

(Nitride phosphor)
The phosphor used in the present invention contains N and at least one element selected from Be, Mg, Ca, Sr, Ba, and Zn, and C, Si, Ge, Sn, Ti, Zr, and A nitride-based phosphor containing at least one element selected from Hf and activated by at least one element selected from rare earth elements can also be used. The nitride-based phosphor used in the present embodiment refers to a phosphor that emits light when excited by absorbing visible light, ultraviolet light, and light emitted from the YAG-based phosphor emitted from the LED chip. For _{example, Sr 2 Si 5 N 8:} Eu, Pr, Ba 2 Si 5 N 8: Eu, Pr, Mg 2 Si 5 N 8: Eu, Pr, Zn 2 Si 5 N 8: Eu, Pr, SrSi 7 N 10 _{: Eu, Pr, BaSi 7 N} 10: Eu, Ce, MgSi 7 N 10: Eu, Ce, ZnSi 7 N 10: Eu, Ce, Sr 2 Ge 5 N 8: Eu, Ce, Ba 2 Ge 5 N 8: _{Eu, Pr, Mg 2 Ge 5} N 8: Eu, Pr, Zn 2 Ge 5 N 8: Eu, Pr, SrGe 7 N 10: Eu, Ce, BaGe 7 N 10: Eu, Pr, MgGe 7 N 10: Eu , Pr, ZnGe ₇ N ₁₀ : Eu, Ce, Sr _1.8 Ca _0.2 Si ₅ N ₈ : Eu, Pr, Ba _1.8 Ca _0.2 Si ₅ N ₈ : Eu, Ce, Mg _1.8 Ca _0.2 Si ₅ N ₈ : Eu, Pr, Zn _1.8 Ca _0.2 Si ₅ N ₈ : Eu, Ce, Sr _0.8 Ca _0.2 Si ₇ N ₁₀ : Eu, La, Ba _0.8 Ca _0.2 Si ₇ N ₁₀ : Eu, La, Mg _0.8 Ca _0.2 Si ₇ N ₁₀ : Eu, Nd, Zn _0.8 Ca _0.2 Si ₇ N ₁₀ : Eu, Nd, Sr _0.8 Ca _{0. 2} Ge ₇ N ₁₀ : Eu, Tb, Ba _0.8 Ca _0.2 Ge ₇ N ₁₀ : Eu, Tb, Mg _0.8 Ca _0.2 Ge ₇ N ₁₀ : Eu, Pr, Zn _0.8 Ca _{0 .2 Ge 7 N 10: Eu,} Pr, Sr 0.8 Ca 0.2 Si 6 GeN 10: Eu, Pr, Ba 0.8 Ca 0.2 Si 6 GeN 10: Eu, Pr, Mg 0.8 Ca _0.2 Si ₆ GeN ₁₀ : Eu, Y, Zn _0.8 Ca _{0. 2} Si ₆ GeN ₁₀ : Eu, Y, Sr ₂ Si ₅ N ₈ : Pr, Ba ₂ Si ₅ N ₈ : Pr, Sr ₂ Si ₅ N ₈ : Tb, BaGe ₇ N ₁₀ : Ce, etc. It is not limited. The rare earth element contained in the nitride phosphor preferably contains at least one of Y, La, Ce, Pr, Nd, Gd, Tb, Dy, Ho, Er, and Lu. , Sm, Tm, Yb may be contained. These rare earth elements are mixed in the raw material in the form of oxides, imides, amides, etc. in addition to simple substances. Rare earth elements mainly have a stable trivalent electron configuration, while Yb, Sm, etc. have a divalent configuration, and Ce, Pr, Tb, etc. have a tetravalent electron configuration. When the rare earth element of the oxide is used, the involvement of oxygen affects the light emission characteristics of the phosphor. In other words, the emission luminance may be reduced by containing oxygen. On the other hand, there are also advantages such as shortening the afterglow. However, when Mn is used, the particle size can be increased, and the luminance can be improved.

For example, La is used as a coactivator. Since lanthanum oxide (La ₂ O ₃ ) is a white crystal and is quickly replaced with carbonate when left in the air, it is stored in an inert gas atmosphere.
For example, Pr is used as a coactivator. Praseodymium oxide (Pr ₆ O ₁₁ ) is a non-stoichiometric oxide, unlike ordinary rare earth oxide Z ₂ O _3, and burns praseodymium oxalate, hydroxide, carbonate, etc. in the air 800 When heated to 0 ° C., it is obtained as a black powder having a composition of Pr ₆ O ₁₁ . Pr ₆ O ₁₁ is a starting material for synthesizing a praseodymium compound, and a high-purity one is also commercially available.

In particular, the phosphor according to the present invention includes Mn-added Sr—Ca—Si—N: Eu, Ca—Si—N: Eu, Sr—Si—N: Eu, Sr—Ca—Si—O—N: Eu, Ca—Si—O—N: Eu, Sr—Si—O—N: Eu-based silicone nitride. The basic constituent elements of this phosphor are represented by the general formula L _X Si _Y N _{(2 / 3X + 4 / 3Y)} : Eu or L _X Si _Y O _Z N _{(2 / 3X + 4 / 3Y-2 / 3Z)} : Eu (L is Sr, Ca, or any one of Sr and Ca.) In the general formula, X and Y are preferably X = 2, Y = 5, or X = 1, Y = 7, but any can be used. Specifically, the basic constituent elements, Mn is added _{(Sr X Ca 1-X)} 2 Si 5 N 8: Eu, Sr 2 Si 5 N 8: Eu, Ca 2 Si 5 N 8: Eu, Sr _{X Ca 1-X Si 7 N} 10: Eu, SrSi 7 N 10: Eu, CaSi 7 N 10: it is preferable to use a phosphor represented by Eu, during the composition of the phosphor, Mg, At least one selected from the group consisting of Sr, Ca, Ba, Zn, B, Al, Cu, Mn, Cr and Ni may be contained. L is any one of Sr, Ca, Sr and Ca. The mixing ratio of Sr and Ca can be changed as desired. By using Si for the composition of the phosphor, it is possible to provide an inexpensive phosphor with good crystallinity.

Europium Eu, which is a rare earth element, is used for the emission center. That is, this phosphor uses Eu ²⁺ as an activator with respect to the base alkaline earth metal silicon nitride. For example, it is preferable to use europium alone or europium nitride. However, this is not the case when Mn is added.

Mn as an additive promotes diffusion of Eu ²⁺ and improves luminous efficiency such as luminous luminance, energy efficiency, and quantum efficiency. Mn is contained in the raw material, or Mn alone or a Mn compound is contained in the manufacturing process and fired together with the raw material.

  The phosphor includes Mg, Ga, In, Li, Na, K, Re, Mo, Fe, Sr, Ca, Ba, Zn, B, Al, Cu, in the basic constituent element or together with the basic constituent element. It contains at least one selected from the group consisting of Mn, Cr, O and Ni. These elements have actions such as increasing the particle diameter and increasing the luminance of light emission. Further, B, Al, Mg, Cr and Ni have an effect that afterglow can be suppressed.

  Such a nitride-based phosphor absorbs part of the light emitted by the light emitting element and emits light in the yellow to red region. Light emission using a nitride-based phosphor together with a YAG-based phosphor to emit warm white-colored light by mixing the light emitted by the light-emitting element and the yellow to red light by the nitride-based phosphor Providing equipment. It is preferable that the phosphor added in addition to the nitride-based phosphor contains an yttrium / aluminum oxide phosphor activated with cerium. This is because it can be adjusted to a desired chromaticity by containing the yttrium aluminum oxide phosphor. The yttrium / aluminum oxide phosphor activated by cerium absorbs a part of the light emitting element light and emits light in the yellow region. Here, the light emitted by the light emitting element and the yellow light of the yttrium / aluminum oxide phosphor emit white mixed color light by mixing colors. Therefore, the yttrium / aluminum oxide phosphor and the phosphor emitting red light are mixed together in a translucent coating member and combined with the blue light emitted by the light emitting element, thereby mixing white color. A light-emitting device that emits light can be provided. Particularly preferred is a white light emitting device whose chromaticity is located on the locus of black body radiation in the chromaticity diagram. However, in order to provide a light emitting device having a desired color temperature, the amount of phosphor of the yttrium / aluminum oxide phosphor and the amount of phosphor of red light emission can be appropriately changed. This light-emitting device that emits white-based mixed color light improves the special color rendering index R9. A conventional white light emitting device consisting only of a combination of a blue light emitting element and an yttrium aluminum oxide phosphor activated with cerium has a special color rendering index R9 of almost 0 at a color temperature of Tcp = 4600K, and a reddish component. Was lacking. For this reason, increasing the special color rendering index R9 has been a problem to be solved. However, in the present invention, the special color rendering index near the color temperature Tcp = 4600K is obtained by using the phosphor emitting red light together with the yttrium aluminum oxide phosphor. R9 can be increased to around 40.

Next, the phosphor according to the present invention: is described a method of manufacturing the _{((Sr X Ca 1-X} ) 2 Si 5 N 8 Eu), but is not limited to this manufacturing method. The phosphor contains Mn and O.

Raw materials Sr and Ca are pulverized. The raw materials Sr and Ca are preferably used alone, but compounds such as imide compounds and amide compounds can also be used. The raw materials Sr and Ca may contain B, Al, Cu, Mg, Mn, MnO, Mn ₂ O ₃ , Al ₂ O ₃ and the like. The raw materials Sr and Ca are pulverized in a glove box in an argon atmosphere. Sr and Ca obtained by pulverization preferably have an average particle size of about 0.1 μm to 15 μm. The purity of Sr and Ca is preferably 2N or higher. In order to improve the mixed state, at least one of the metal Ca, the metal Sr, and the metal Eu can be alloyed, nitrided, pulverized, and used as a raw material.

The raw material Si is pulverized. The raw material Si is preferably a simple substance, but a nitride compound, an imide compound, an amide compound, or the like can also be used. For example, Si ₃ N ₄ , Si (NH ₂ ) ₂ , Mg ₂ Si, or the like. The purity of the raw material Si is preferably 3N or more, but Al ₂ O ₃ , Mg, metal borides (Co ₃ B, Ni ₃ B, CrB), manganese oxide, H ₃ BO ₃ , B ₂ O ₃ , Compounds such as Cu ₂ O and CuO may be contained. Si is also pulverized in a glove box in an argon atmosphere or a nitrogen atmosphere in the same manner as the raw materials Sr and Ca. The average particle size of the Si compound is preferably about 0.1 μm to 15 μm.

  Next, Sr and Ca are nitrided in a nitrogen atmosphere. Sr and Ca may be mixed and nitrided, or may be individually nitrided. Thereby, a nitride of Sr and Ca can be obtained. In addition, raw material Si is nitrided in a nitrogen atmosphere to obtain silicon nitride.

Sr, Ca or Sr—Ca nitride is pulverized. Sr, Ca, and Sr—Ca nitrides are pulverized in a glove box in an argon atmosphere or a nitrogen atmosphere.
Similarly, Si nitride and Eu compound Eu ₂ O ₃ are pulverized. Europium oxide is used as the Eu compound, but metal europium, europium nitride, and the like can also be used. In addition, as the raw material Z, an imide compound or an amide compound can be used. The average particle size of the alkaline earth metal nitride, silicon nitride and europium oxide after pulverization is preferably about 0.1 μm to 15 μm.

The raw material may contain at least one selected from the group consisting of Mg, Sr, Ca, Ba, Zn, B, Al, Cu, Mn, Cr, O, and Ni. In addition, the above elements such as Mg, Zn, and B can be mixed by adjusting the blending amount in the following mixing step. These compounds can be added alone to the raw material, but are usually added in the form of compounds. Such compounds include H ₃ BO ₃ , Cu ₂ O ₃ , MgCl ₂ , MgO · CaO, Al ₂ O ₃ , metal borides (CrB, Mg ₃ B ₂ , AlB ₂ , MnB), B ₂ O ₃ , Cu ₂ O, CuO, and the like.

After the pulverization, Sr, Ca, Sr—Ca nitride, Si nitride, and Eu compound Eu ₂ O ₃ are mixed, and Mn is added. Since these mixtures are easily oxidized, they are mixed in a glove box in an Ar atmosphere or a nitrogen atmosphere.

Finally, a mixture of Sr, Ca, Sr—Ca nitride, Si nitride, and Eu compound Eu ₂ O ₃ is fired in an ammonia atmosphere. A phosphor represented by (Sr _X Ca _1-X ) ₂ Si ₅ N ₈ : Eu to which Mn is added can be obtained by firing. However, the composition of the target phosphor can be changed by changing the blending ratio of each raw material.

For firing, a tubular furnace, a small furnace, a high-frequency furnace, a metal furnace, or the like can be used. The firing temperature can be in the range of 1200 to 1700 ° C, but the firing temperature is preferably 1400 to 1700 ° C. It is preferable to use a one-step baking in which the temperature is gradually raised and the baking is performed at 1200 to 1500 ° C. for several hours, but the first baking is performed at 800 to 1000 ° C. and the heating is gradually started from 1200. Two-stage firing (multi-stage firing) in which the second stage firing is performed at 1500 ° C. can also be used. The phosphor material is preferably fired using a boron nitride (BN) crucible or boat. Besides the crucible made of boron nitride, a crucible made of alumina (Al ₂ O ₃ ) can also be used.

By using the above manufacturing method, it is possible to obtain a target phosphor. In the embodiment of the present invention, a nitride-based phosphor is particularly used as a phosphor that emits reddish light. In the present invention, the above-described YAG-based phosphor can emit red light. It is also possible to provide a light emitting device including a phosphor. Such a phosphor capable of emitting red light is a phosphor that emits light when excited by light having a wavelength of 400 to 600 nm. For example, Y ₂ O ₂ S: Eu, La ₂ O ₂ S: Eu. CaS: Eu, SrS: Eu, ZnS: Mn, ZnCdS: Ag, Al, ZnCdS: Cu, Al and the like. Thus, by using a phosphor capable of emitting red light together with a YAG phosphor, it is possible to improve the color rendering properties of the light emitting device.

  The phosphor capable of emitting red light typified by the aluminum garnet phosphor and the nitride phosphor formed as described above is disposed in the wavelength conversion member made of a single layer around the light emitting element. Two or more types may exist, and one type or two or more types may exist in the wavelength conversion member consisting of two layers. With such a configuration, it is possible to obtain mixed color light by mixing light from different types of phosphors. In this case, it is preferable that the average particle diameters and shapes of the phosphors are similar in order to better mix the light emitted from the phosphors and reduce color unevenness. Also, considering that the nitride-based phosphor absorbs part of the light that has been wavelength-converted by the YAG-based phosphor, the nitride-based phosphor is disposed closer to the light emitting element than the YAG-based phosphor. It is preferable to form the wavelength conversion member as described above. With this configuration, a part of the light wavelength-converted by the YAG phosphor is not absorbed by the nitride phosphor, and the YAG phosphor and the nitride phosphor are mixed. Compared with the case where it contains, the color rendering property of mixed-color light can be improved.

(Alkaline earth metal silicate)
The light-emitting device in this embodiment mode uses alkaline earth activated by europium as a phosphor that absorbs part of light emitted from a light-emitting element and emits light having a wavelength different from the wavelength of the absorbed light. It can also have a metal silicate. The alkaline earth metal silicate can be a light-emitting device that emits warm color mixed light using blue light as excitation light. The alkaline earth metal silicate is preferably an alkaline earth metal orthosilicate represented by the following general formula.
(2-x-y) SrO · x (Ba, Ca) O · (1-a-b-c-d) SiO 2 · aP 2 O 5 bAl 2 O 3 cB 2 O 3 dGeO 2: yEu 2+ ( Equation Medium, 0 <x <1.6, 0.005 <y <0.5, 0 <a, b, c, d <0.5.)
(2-x-y) BaO · x (Sr, Ca) O · (1-a-b-c-d) SiO 2 · aP 2 O 5 bAl 2 O 3 cB 2 O 3 dGeO 2: yEu 2+ ( Equation (Inside, 0.01 <x <1.6, 0.005 <y <0.5, 0 <a, b, c, d <0.5.)
Here, preferably, at least one of the values of a, b, c and d is greater than 0.01.

The light-emitting device in the present embodiment is a phosphor composed of an alkaline earth metal salt. In addition to the alkaline earth metal silicate described above, alkaline earth metal aluminate or Y activated by europium and / or manganese is used. (V, P, Si) O ₄ : Eu, or an alkaline earth metal-magnesium-disilicate represented by the following formula:

Me (3-xy) MgSi ₂ O ₃ : xEu, yMn (wherein 0.005 <x <0.5, 0.005 <y <0.5, Me represents Ba and / or Sr and / or Or Ca.)
Next, the manufacturing process of the phosphor made of alkaline earth metal silicate in the present embodiment will be described.

  For the production of alkaline earth metal silicates, the stoichiometric amounts of the starting materials alkaline earth metal carbonate, silicon dioxide and europium oxide are intimately mixed according to the selected composition, and the phosphor is produced. In a conventional solid reaction, the desired phosphor is converted at a temperature of 1100 ° C. and 1400 ° C. under a reducing atmosphere. At this time, it is preferable to add less than 0.2 mol of ammonium chloride or other halide. If necessary, part of silicon can be replaced with germanium, boron, aluminum, and phosphorus, and part of europium can be replaced with manganese.

One of the phosphors as described above, ie, alkaline earth metal aluminates activated with europium and / or manganese, Y (V, P, Si) O ₄ : Eu, Y ₂ O ₂ S: Eu ³⁺ By combining one or these phosphors, as shown in the following table as an example, it is possible to obtain an emission color having a desired color temperature and high color reproducibility.

（その他の蛍光体）
本実施の形態において、蛍光体として紫外から可視領域の光により励起されて発光する蛍光体も用いることができ、具体例として、以下の蛍光体が挙げられる。
（１）Ｅｕ、ＭｎまたはＥｕとＭｎで付活されたアルカリ土類ハロゲンアパタイト蛍光体；例えば、Ｍ_５（ＰＯ_４）_３（Ｃｌ、Ｂｒ）：Ｅｕ（但し、ＭはＳｒ、Ｃａ、Ｂａ、Ｍｇから選択される少なくとも一種）、Ｃａ_１０（ＰＯ_４）_６ＣｌＢｒ：Ｍｎ，Ｅｕなどの蛍光体。
（２）Ｅｕ、ＭｎまたはＥｕとＭｎで付活されたアルカリ土類アルミン酸塩蛍光体；例えば、ＢａＭｇ_２Ａｌ_１６Ｏ_２７：Ｅｕ、ＢａＭｇ_２Ａｌ_１６Ｏ_２７：Ｅｕ，Ｍｎ、Ｓｒ_４Ａｌ_１４Ｏ_２５：Ｅｕ、ＳｒＡｌ_２Ｏ_４：Ｅｕ、ＣａＡｌ_２Ｏ_４：Ｅｕ、ＢａＭｇＡｌ_１０Ｏ_１７：Ｅｕ、ＢａＭｇＡｌ_１０Ｏ_１７：Ｅｕ，Ｍｎなどの蛍光体。
（３）Ｅｕで付活された希土類酸硫化物蛍光体；例えば、Ｌａ_２Ｏ_２Ｓ：Ｅｕ、Ｙ_２Ｏ_２Ｓ：Ｅｕ、Ｇｄ_２Ｏ_２Ｓ：Ｅｕなどの蛍光体。
（４）（Ｚｎ、Ｃｄ）Ｓ：Ｃｕ、Ｚｎ_２ＧｅＯ_４：Ｍｎ、３．５ＭｇＯ・０．５ＭｇＦ_２・ＧｅＯ_２：Ｍｎ、Ｍｇ_６Ａｓ_２Ｏ_１１：Ｍｎ、（Ｍｇ、Ｃａ、Ｓｒ、Ｂａ）Ｇａ_２Ｓ_４：Ｅｕ、Ｃａ_１０（ＰＯ_４）_６ＦＣｌ：Ｓｂ，Ｍｎ、や（５）Ｅｕで付活された有機錯体蛍光体。

(Other phosphors)
In the present embodiment, a phosphor that emits light by being excited by light in the ultraviolet to visible region can be used as the phosphor. Specific examples include the following phosphors.
(1) Eu, Mn or alkaline earth halogen apatite phosphor activated with Eu and Mn; for example, M ₅ (PO ₄ ) ₃ (Cl, Br): Eu (where M is Sr, Ca, Ba, Phosphor such as Ca ₁₀ (PO ₄ ) ₆ ClBr: Mn, Eu, or the like selected from Mg.
(2) Eu, Mn or alkaline earth aluminate phosphor activated by Eu and Mn; for example, BaMg ₂ Al ₁₆ O ₂₇ : Eu, BaMg ₂ Al ₁₆ O ₂₇ : Eu, Mn, Sr ₄ Al ₁₄ Phosphors such as O ₂₅ : Eu, SrAl ₂ O ₄ : Eu, CaAl ₂ O ₄ : Eu, BaMgAl ₁₀ O ₁₇ : Eu, BaMgAl ₁₀ O ₁₇ : Eu, Mn and the like.
(3) A rare earth oxysulfide phosphor activated with Eu; for example, a phosphor such as La ₂ O ₂ S: Eu, Y ₂ O ₂ S: Eu, or Gd ₂ O ₂ S: Eu.
(4) (Zn, Cd) S: Cu, Zn ₂ GeO ₄ : Mn, 3.5 MgO · 0.5 MgF ₂ · GeO ₂ : Mn, Mg ₆ As ₂ O ₁₁ : Mn, (Mg, Ca, Sr, Ba ) Ga ₂ S ₄ : Eu, Ca ₁₀ (PO ₄ ) ₆ FCl: Sb, Mn, (5) Organic complex phosphor activated with Eu.

  In addition, these phosphors may be used alone in a single-layer wavelength conversion member, or may be used as a mixture. Furthermore, they may be used alone or in combination in a wavelength conversion member in which two or more layers are laminated.

  Examples according to the present invention will be described in detail below. In addition, this invention is not limited only to the Example shown below.

  FIG. 1 is a schematic cross-sectional view taken along the line XX of FIG. 3 for the semiconductor device according to this example. FIG. 2 is a schematic top view showing a state where conductor wiring is applied to the support substrate according to the present embodiment. FIG. 3 is a schematic top view showing a state where the light emitting element is flip-chip bonded to the support substrate according to the present embodiment. Note that FIG. 3 shows a state where the light emitting element is viewed from the light emission observation surface side, and the p-side pedestal electrode 106, the n-side pedestal electrode 107, and the bump 105 are seen through the translucent substrate. Further, FIG. 4 schematically shows a circuit configuration of the light emitting device in the example.

In the light emitting device 100 in this embodiment, two semiconductor light emitting elements 101 are flip-chip mounted on the same submount 103 with bumps 105. In the light-emitting element in this example, a nitride semiconductor element having a 475 nm In _0.2 Ga _0.8 N semiconductor having a monochromatic emission peak of visible light as an active layer is used. More specifically, the LED chip as a light emitting element is nitrided by MOCVD by flowing TMG (trimethylgallium) gas, TMI (trimethylindium) gas, nitrogen gas and dopant gas together with a carrier gas onto a cleaned sapphire substrate. It can be formed by depositing a physical semiconductor. A layer to be an n-type nitride semiconductor or a p-type nitride semiconductor is formed by switching between SiH ₄ and Cp ₂ Mg as the dopant gas.

The element structure of the LED chip of this example is an n-type contact layer in which an undoped nitride semiconductor GaN layer and an Si-doped n-type electrode are formed on a sapphire substrate, which is a translucent substrate. A GaN layer and a GaN layer that is an undoped nitride semiconductor are stacked, and further, a set of GaN layers that serve as barrier layers and InGaN layers that serve as well layers, and 5 layers are stacked. Finally, a GaN layer that serves as a barrier layer is stacked. Thus, an active layer is formed, and the active layer has a multiple quantum well structure. Furthermore, an AlGaN layer as a p-type cladding layer doped with Mg and a p-type GaN layer as a p-type contact layer doped with Mg are sequentially laminated on the active layer. (Note that a GaN layer is formed on the sapphire substrate at a low temperature to serve as a buffer layer. The p-type semiconductor is annealed at 400 ° C. or higher after film formation.)
Etching exposes the surfaces of the p-type contact layer and the n-type contact layer on the same side of the nitride semiconductor on the sapphire substrate. Next, sputtering using Rh and Ir as materials is sequentially performed on the p-type contact layer, and the diffusion electrode 110 is provided on almost the entire surface of the p-type contact layer exposed in a stripe shape. By setting it as such an electrode, the electric current which flows through the diffused electrode 110 can be spread over a wide range of a p-type contact layer, and the luminous efficiency of an LED chip can be improved. In addition, since light from the light emitting element is reflected by the electrodes on the entire surface and emitted from the direction of the sapphire substrate, it is possible to improve light extraction efficiency from the light emitting element mounted on the flip chip.

  Further, sputtering using W, Pt, and Au as materials is sequentially performed, and the p-side pedestal electrode and the n-side pedestal electrode are simultaneously formed on the diffusion electrode 110 and a part of the n-type contact layer. Here, by forming the p-side pedestal electrode and the n-side pedestal electrode simultaneously, the number of steps for forming the electrode can be reduced. In the present embodiment, the bump bonding positions of the n-type pedestal electrode are both corners of the strip-shaped n-type pedestal electrode and both corners of the LED chip. Further, as shown in FIG. 8, the n-type semiconductor layer exposed by etching has a center of the light emitting element from the position of the corner 111 where the n-type pedestal electrode 107 is formed, as viewed from the upper surface direction on the light emission observation surface side. It has a constricted portion 113 that narrows in the direction. Moreover, it has the extending | stretching part 112 so that a pair of constricted part 113 which mutually opposes may be tied. Further, a p-side semiconductor layer, a diffusion electrode, or a p-side pedestal electrode is formed at a position sandwiching the extending portion 112.

  As shown in FIG. 1, the support substrate 103 used in one embodiment of the present invention is provided with conductor wirings 108 and 109 made of Au on an aluminum nitride plate, and p-side pedestal electrodes via bumps 105. A pair of positive and negative electrodes facing the 106 and the n-side pedestal electrode 107 are insulated and separated. Here, the conductor wiring in the present embodiment is formed in a comb shape so that the pair of positive and negative electrodes partially surround each other. By setting it as such a shape, the heat dissipation from the semiconductor light emitting element by which the flip chip mounting was carried out can be improved. Furthermore, the area of the region facing the p-side pedestal electrode 106 of the LED chip is larger than the area of the region facing the n-side pedestal electrode 107. Further, the light emitting element in this example is one in which two light emitting diodes are connected in parallel as shown in the circuit diagram of FIG. By using parallel connection in this way, the conductor wiring is simplified and heat dissipation can be improved as compared with the case of serial connection.

  Moreover, the silicone resin used as the resin layer 104 in this embodiment is provided with a through hole, and the conductor wiring is exposed on the bottom surface of the through hole. In the light emitting device according to the present embodiment, a pair of positive and negative electrodes of the LED chip is flip-chip mounted and flip-chip bonded to a conductor wiring made of Au through Au bumps. Hereinafter, a method for manufacturing the light emitting device in this embodiment will be described.

(Process 1)
An Au layer to be a conductor wiring is formed by plating at a predetermined position of the wafer made of aluminum nitride. As shown in FIG. 2, the conductor wiring in the present embodiment is insulated and separated from the positive conductor wiring facing the positive electrode of the LED chip and the negative conductor wiring facing the negative electrode of the LED chip. Is formed so as to surround. For example, the support substrate shown in FIG. 2 is a support substrate on which two LED chips described above are adjacent and flip-chip mounted. The conductor wiring on the positive (+) pole side arranged on the support substrate is connected to the positive electrode side of the external electrode (not shown), and the p of one LED chip (A) among the plurality of LED chips. It extends to a position facing the p-side pedestal electrode of the other LED chip (B) via a position facing the side pedestal electrode. Similarly, the negative (−) pole side conductor wiring disposed on the support substrate is connected to an external electrode (not shown) from a region facing one n-side base electrode of the LED chip (A) and the LED chip (B). ) Extending to the region facing the other n-side pedestal electrode of the LED chip (A) via the region connected to the negative electrode side of) and the region facing the other n-side pedestal electrode of the LED chip (B) is doing. Accordingly, the conductor wiring formed on the support substrate is formed in a state where the positive and negative conductor wirings are sandwiched between the two when viewed from the LED chip mounting direction in the region facing the electrode formation surface of the LED chip. The LED chips are connected in parallel as shown in the circuit diagram of FIG. In addition, the area of the conductor wiring in the region facing the positive electrode of the LED chip is larger than the region facing the negative electrode of the LED chip, and the number of bumps to be placed is increased.

  Further, when viewed from the direction perpendicular to the support substrate, the outer edge of the conductor wiring on the positive electrode side has a number of arcuate shapes protruding in the direction of the conductor wiring on the negative electrode side, while the outer edge of the conductor wiring on the negative electrode side The part has a concave shape corresponding to the convex arc-shaped outer edge on the positive electrode side.

(Process 2)
Screen printing is performed on one main surface of the support substrate having the conductor wiring using a silicone resin as a material. Through-holes are provided at the bump formation locations, and screen printing is performed so that the surface of the conductor wiring is exposed to form a resin layer. After the silicone resin is cured, when the screen plate is removed, a resin layer made of the silicone resin is formed on the conductor wiring except for the bump formation portion. Here, the inner wall of the through hole for providing the bump forming portion has a tapered shape. By adopting such a shape, it is possible to easily install the bumps. Further, the resin layer is in close contact with the surface of the LED chip with only slight deformation, and the resin layer surrounds the bump and exists between the LED chip and the support substrate.

(Process 3)
Bumps made of Au as a material are bonded to the conductor wiring exposed on the bottom surfaces of the plurality of through holes by a bump bonder. Here, more bumps are formed in the region facing the p-type pedestal electrode than in the region facing the n-type pedestal electrode so as to correspond to the surface area thereof. Further, bumps for bonding the p-type pedestal electrode are arranged inside, and bumps for bonding the n-type pedestal electrode are arranged at positions corresponding to both corners of the LED chip so as to surround the bumps from both ends. In this example, 24 bumps for joining the p-type pedestal electrode and 12 bumps for joining the n-type pedestal electrode are used, and the maximum diameter is about 105 μm and the maximum for a 1 × 2 mm size light-emitting element. An Au bump having a height of about 40 μm is bonded.

(Process 4)
The LED chip is placed on the upper surface of the resin layer so that both the positive and negative electrode surfaces of the LED chip face each other directly above the bump. Next, the positive and negative electrode surfaces of the LED chip are brought into contact with the bumps, and ultrasonic waves are applied while pressing from the substrate side of the LED chip, so that the positive and negative electrodes of the LED chip and the conductor wiring are opposed to each other through the bumps. And join. At this time, since the silicone resin is soft and rich in elasticity, it shrinks due to pressure, and often enters the gaps on the electrode surface of the LED chip. Also, the number of bumps in the through hole should be adjusted in advance before die bonding so that the bonding force between the electrode of the LED chip and the conductor wiring is sufficiently larger than the elastic force of the silicone resin compressed by die bonding. deep. In this way, the LED chip is not pushed back in the direction opposite to the support substrate by the elastic force of the silicone resin, and the bonding strength between the electrode of the LED chip and the conductor wiring is kept constant. Since conduction between the electrode and the conductor wiring is not interrupted, a highly reliable light-emitting device can be obtained.

(Process 5)
Finally, the support substrate is cut so as to include a desired number of LED chips, mounted on a package, and connected to an external electrode through a conductive wire to obtain a light emitting device. In addition, the shape of the support substrate after cutting may be any shape other than a rectangle.

  By using the light emitting device of this embodiment, the heat inside the LED chip, where heat from the light emitting element is easily trapped, is radiated by a relatively large number of bumps to be mounted and wide conductor wiring. Therefore, heat dissipation from the light-emitting element is improved, and a highly reliable light-emitting device that can emit light with high luminance can be provided.

  Further, in the light emitting device configured as in this embodiment, there is almost no gap between the electrode surface and side surface of the LED chip and the reflective layer. Conventionally, when a gap is generated between the LED chip and the support substrate, the light emitted from the LED chip is refracted in a complicated manner by the air present in the gap, leading to a decrease in light extraction efficiency, and further, thermal conductivity. Radiating heat from the light-emitting element through low air, resulting in a decrease in heat dissipation effect. However, in the present embodiment, since the gap is not generated, the light extraction efficiency of the light emitting device is improved and the heat dissipation effect is also increased.

  FIG. 5 is a schematic top view showing a state in which conductor wiring is applied to the support substrate according to the present embodiment. FIG. 6 is a schematic top view showing a state where the LED chip is flip-chip bonded to the support substrate according to the present embodiment. FIG. 6 shows a state where the LED chip is viewed from the translucent substrate side, and the p-side pedestal electrode, the n-side pedestal electrode, and the bumps are seen through. Further, FIG. 7 schematically shows a circuit configuration of the light emitting device in the example.

  The present embodiment is a light emitting device in which a plurality of LED chips are flip-chip mounted on the same support substrate as in the first embodiment. More specifically, in the light emitting device according to the present embodiment, the arrangement in which the LED chips described in the first embodiment are connected in parallel is set as one set, four sets are arranged, and each set is connected in series. It is made to become. Therefore, the conductor wiring on the support substrate in this embodiment is a positive-side conductor wiring (in the present embodiment, “first”) connected to the external positive electrode (not shown) and the positive electrode of the light emitting element mounted on the edge. And a negative-side conductor wiring (in this embodiment, “second conductor”) connected to the external negative electrode (not shown) and the negative electrode of the light-emitting element mounted on the end. And a third conductor wiring 114 that electrically connects the positive electrode and the negative electrode of the light emitting element and connects each set in series. Here, on the support substrate, the third conductor wiring 114 for connecting each set in series is such that the pattern on the positive electrode side surrounds part of the pattern on the negative electrode side when viewed from the direction perpendicular to the support substrate. It is arranged like a comb (key shape). Furthermore, the third conductor wiring 114 can be widely arranged as compared with the conventional light emitting device disclosed in the above-mentioned patent document. Therefore, according to this embodiment, even when a large number of light emitting elements are mounted, the heat dissipation can be improved and a light emitting device with high luminance can be obtained.

  In a state where the screen plate is installed, a silicone resin material containing aluminum oxide as a filler is squeezed to a height equal to or higher than a bump to be formed in a subsequent process, and screen printing is performed. In other respects, the light emitting device is formed in the same manner as in the above embodiment. By configuring as in the present embodiment, the heat dissipation effect can be further enhanced.

  A light emitting device is formed in the same manner as in the above embodiment except that bumps are formed on the electrodes of the LED chip first and ultrasonic bonding is performed opposite the conductor wiring exposed from the through hole of the resin layer provided on the support substrate. To do. By adopting the formation method of this embodiment, the same effects as those of the other embodiments can be obtained.

  FIG. 12 is a top view of a light-emitting element used in the light-emitting device in this example, and FIG. 13 is a top view of a submount. FIG. 14 is a top view of the light emitting device according to this example in which the light emitting elements are flip-chip mounted on the submount.

  The light-emitting device according to this example is formed by flip-chip mounting four light-emitting element chips adjacent to a hexagonal submount as viewed from above in a 2 × 2 matrix. Hereafter, each structural member in the light-emitting device of a present Example is explained in full detail.

  As shown in FIG. 12, in the light emitting device according to this example, Rh / Pt / Au is formed in an elliptical shape with respect to the p-side diffusion electrode (ITO) as the p-side pedestal electrode. The n-side pedestal electrode is formed on the n-type semiconductor from which W / Pt / Au is exposed. Other than this, the light emitting element is the same as that of Example 1.

The submount in this embodiment is a Si diode element, and a plurality of p-type semiconductor regions and n-type semiconductor regions are formed in one main surface direction. Further, a part of the n-type semiconductor region is deposited with a thickness of 5000 Å as a reflective film and electrode, and further Ti / Au is deposited as an electrode with a thickness of 3000 Å / 7000 そ れ ぞ れ on each of them. Except for the region where the reflective film is formed, the p-type semiconductor region and the n-type semiconductor region are covered with an insulating film made of SiO ₂ . Further, the submount has an electrode on which Al / Ti / Ag is sequentially deposited on the back surface.

  When the submount according to the present embodiment is viewed from the side where the light emitting element is flip-chip mounted, a pair of positive and negative conductive patterns of the reflective film and electrode (Al) are arranged, and the electrode (Ti / Au) is disposed thereon. A plurality of ellipses are formed. In the present embodiment, twelve elliptical electrodes are formed for one light emitting element for joining the positive electrode and six for joining the negative electrode so as to sandwich the twelve. Similarly to the first embodiment, the positive and negative conductive patterns have portions extending opposite to each other so as to surround a part of the submount when viewed from a direction perpendicular to the main surface of the submount. It is shaped like a key or key. That is, in the conductive pattern disposed on the submount, in the region facing the light emitting element 201, the conductor wiring 204a facing the positive electrode of the light emitting element is between the conductor wiring 204b facing the negative electrode of the light emitting element. Is arranged. Further, the area of the conductive pattern facing the positive electrode of the light emitting element is wider than the area of the conductive pattern facing the negative electrode of the light emitting element. Further, in the region where the positive and negative conductive patterns are insulated and separated and the light emitting elements are opposed to each other, the outer edges of the positive and negative conductive patterns are uneven or wavy.

  As shown in FIG. 14, the light-emitting element 201 of this example has p-side and n-side pedestal electrodes facing the elliptical electrode 203 of the submount 205, and is applied to the submount by load, heat, and pressure. Connected mechanically and electrically. Note that the light-emitting element in this example is a semiconductor light-emitting element in which a semiconductor is stacked on a light-transmitting substrate. As illustrated in FIG. 14, when viewed from the light-transmitting substrate side, the semiconductor or electrode of the light-emitting element is It is observed through. According to this embodiment, heat can be efficiently radiated from the light emitting element, and a light emitting device with high luminance can be obtained.

  Since the light emitting device according to the present invention has high brightness and excellent heat dissipation and reliability, it can be used for in-vehicle lighting such as indoor lighting and car headlights.

FIG. 1 is a schematic cross-sectional view according to one embodiment of the present invention. FIG. 2 is a schematic top view according to one embodiment of the present invention. FIG. 3 is a schematic top view according to one embodiment of the present invention. FIG. 4 is a circuit diagram according to an embodiment of the present invention. FIG. 5 is a schematic top view according to one embodiment of the present invention. FIG. 6 is a schematic top view according to one embodiment of the present invention. FIG. 7 is a circuit diagram according to an embodiment of the present invention. FIG. 8 is a schematic top view of a light emitting device according to an example of the present invention. FIG. 9 is a schematic top view of a light emitting device according to an example of the present invention. FIG. 10 is a schematic cross-sectional view according to one embodiment of the present invention. FIG. 11 is a schematic cross-sectional view according to one embodiment of the present invention. FIG. 12 is a schematic top view of a light emitting device according to an example of the present invention. FIG. 13 is a schematic top view of a support substrate according to an embodiment of the present invention. FIG. 14 is a schematic top view of a light emitting device according to an example of the present invention.

Explanation of symbols

DESCRIPTION OF SYMBOLS 100, 200 ... Light-emitting device 101 ... Semiconductor light-emitting element 102 ... Conductor wiring 103, 202 ... Support substrate 104, 104a, 104b ... Resin layer 105 ... Bump 106 ... p side Pedestal electrode 107 ... n-side pedestal electrode 108, 204a ... positive conductor wiring 109, 204b ... negative conductor wiring 110 ... diffusion electrode 111 ... corner 112 ... extension 113 · ..Constricted portion 114... Third conductor wiring 115... Wavelength conversion member 203... Elliptical electrode 205.

Claims (8)

In a semiconductor device having a semiconductor element having a pair of positive and negative electrodes on the same surface side, and a support substrate having a conductor wiring in which each electrode of the semiconductor element is opposed and joined via a conductive member,
The conductor wiring includes a first region having a conductive member bonded to any one of the electrodes of the semiconductor element when viewed from a direction perpendicular to the main surface of the support substrate, and at least the first region. possess a second region having a conductive member which surrounds the portion bonded to the other electrode of said semiconductor element,
The second region faces one electrode at both corners of the semiconductor element,
The first region is disposed inside both corners of the semiconductor element so as to be surrounded by the second region, and is opposed to the other electrode,
The semiconductor device according to claim 1, wherein a region where the conductive member is placed in the first region is wider than a region where the conductive member is placed in the second region .   The semiconductor device according to claim 1, wherein the first region and the second region each have a comb shape and are formed to be sandwiched between each other.   The semiconductor element has a positive electrode on the p-type semiconductor side and a negative electrode on the n-type semiconductor side, and the respective electrodes are alternately arranged so that the negative electrode is between the positive electrodes. Or the semiconductor device according to 2; The n-type semiconductor includes a corner portion on which the conductive member is placed and facing each other, a constricted portion that narrows from the corner toward an inner side of the semiconductor element, and an extending portion that extends from the constricted portion. The semiconductor device according to claim 3 , wherein the semiconductor device is exposed to form a negative electrode .   5. The semiconductor device according to claim 1, further comprising: a resin layer placed between the support substrate and the semiconductor element so as to surround the conductive member.   A gap between the semiconductor element and another semiconductor element adjacent to the semiconductor element is sealed with a resin layer, and these semiconductor elements absorb at least part of light from the semiconductor element and have different wavelengths. The semiconductor device according to claim 1, wherein the semiconductor device is covered with a wavelength conversion member that emits light having a wavelength.   The semiconductor device according to claim 1, wherein at least the semiconductor element is covered with a sealing member, and the resin layer has a higher thermal conductivity than the sealing member.   The semiconductor device according to claim 1, wherein the resin layer contains a filler.

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