JP4378631B2 - Mram素子の製造方法 - Google Patents
Mram素子の製造方法 Download PDFInfo
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- JP4378631B2 JP4378631B2 JP2004502311A JP2004502311A JP4378631B2 JP 4378631 B2 JP4378631 B2 JP 4378631B2 JP 2004502311 A JP2004502311 A JP 2004502311A JP 2004502311 A JP2004502311 A JP 2004502311A JP 4378631 B2 JP4378631 B2 JP 4378631B2
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- H—ELECTRICITY
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- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y25/00—Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
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- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F10/00—Thin magnetic films, e.g. of one-domain structure
- H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
- H01F10/324—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer
- H01F10/3254—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer the spacer being semiconducting or insulating, e.g. for spin tunnel junction [STJ]
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- H01F41/00—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties
- H01F41/14—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates
- H01F41/30—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates for applying nanostructures, e.g. by molecular beam epitaxy [MBE]
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- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F41/00—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties
- H01F41/14—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates
- H01F41/30—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates for applying nanostructures, e.g. by molecular beam epitaxy [MBE]
- H01F41/302—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates for applying nanostructures, e.g. by molecular beam epitaxy [MBE] for applying spin-exchange-coupled multilayers, e.g. nanostructured superlattices
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- H01—ELECTRIC ELEMENTS
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- H01F41/14—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates
- H01F41/30—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates for applying nanostructures, e.g. by molecular beam epitaxy [MBE]
- H01F41/302—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates for applying nanostructures, e.g. by molecular beam epitaxy [MBE] for applying spin-exchange-coupled multilayers, e.g. nanostructured superlattices
- H01F41/308—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates for applying nanostructures, e.g. by molecular beam epitaxy [MBE] for applying spin-exchange-coupled multilayers, e.g. nanostructured superlattices lift-off processes, e.g. ion milling, for trimming or patterning
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- H—ELECTRICITY
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- H01F41/32—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying conductive, insulating or magnetic material on a magnetic film, specially adapted for a thin magnetic film
- H01F41/34—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying conductive, insulating or magnetic material on a magnetic film, specially adapted for a thin magnetic film in patterns, e.g. by lithography
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Description
Claims (35)
- 基板上に磁気メモリ層としての積層構造を形成するステップと、
前記磁気メモリ層上にキャップ層を成膜するステップと、
該キャップ層及び前記磁気メモリ層のうち所定の領域を除去し、前記キャップ層を有する複数の個別の磁気メモリセルを画定するステップと、
前記複数の個別の磁気メモリセルを画定した後、前記磁気メモリセル及び前記基板上にスペーサ材料層を成膜し、さらにエッチングによりスペーサを形成するステップと、
前記基板及び前記磁気メモリセル上に、連続する第1絶縁層を形成するステップと、
該第1絶縁層のうち、少なくとも前記磁気メモリセル上に位置する部分を除去するステップと、
前記磁気メモリセル上の前記キャップ層を選択的に除去することにより、前記磁気メモリセルの活性な表面を露出させるステップと、
前記磁気メモリセルの前記活性な表面と接触するトップ導電体を形成するステップとを含むことを特徴とする磁気ランダムアクセスメモリ(MRAM)の製造方法。 - 前記キャップ層を成膜するステップが、
炭素、非晶質シリコン、シリコン炭化物及びシリコンリッチのシリコン酸窒化物からなるグループから選ばれた材料を成膜する処理を含むことを特徴とする請求項1に記載の磁気ランダムアクセスメモリの製造方法。 - 前記第1絶縁層のうち、前記少なくとも磁気メモリセル上に位置する部分を除去するステップが、
前記キャップ層が露出するまで行われる化学的機械研磨による平坦化処理を含むことを特徴とする請求項1に記載の磁気ランダムアクセスメモリの製造方法。 - 前記トップ導電体を形成するステップが、
全面に金属層を形成する成膜と、前記トップ導電体を画定するための全面に形成された前記金属層のエッチングと、前記トップ導電体上への第2絶縁層の成膜とを含むことを特徴とする請求項3に記載の磁気ランダムアクセスメモリの製造方法。 - さらに、第2絶縁層の成膜及びその層におけるトレンチの形成を含み、前記第2絶縁層部に形成される前記トレンチの幅が、個々の前記磁気メモリセル上の前記キャップ層の幅より広く、前記トレンチは、前記キャップ層を選択的に除去する前に、前記第2絶縁層を貫通するエッチングにより形成されることを特徴とする請求項3に記載の磁気ランダムアクセスメモリの製造方法。
- 前記トップ導電体を形成するステップが、
前記キャップ層を選択的に除去した後、前記トレンチ内及び前記キャップ層が除去された部分に金属層を成膜する処理を含むことを特徴とする請求項5に記載の磁気ランダムアクセスメモリの製造方法。 - 前記第2絶縁層を成膜する前に、前記第1絶縁層及び前記キャップ層上に、エッチング停止層を成膜する処理を、さらに含むことを特徴とする請求項5に記載の磁気ランダムアクセスメモリの製造方法。
- 前記キャップ層が、炭素で構成され、酸素を用いるプラズマエッチングによって選択的に除去されることを特徴とする請求項1に記載の磁気ランダムアクセスメモリの製造方法。
- 前記キャップ層が、シリコンリッチのシリコン酸窒化物で構成され、Cl2及びNF3のうちの少なくとも1つを用いるプラズマエッチングによって選択的に除去されることを特徴とする請求項1に記載の磁気ランダムアクセスメモリの製造方法。
- 前記スペーサを形成するステップが、
前記キャップ層の側部及び前記磁気メモリセルの側部の前記スペーサ材料層の部分に対して、前記キャップ層上の前記スペーサ材料層の部分を選択的にエッチングすること、及び前記スペーサ材料層のエッチング速度が前記キャップ層のエッチング速度より速い条件でエッチングすることを含むことを特徴とする請求項1に記載の磁気ランダムアクセスメモリの製造方法。 - 前記スペーサの材料が、シリコン炭化物及びシリコン窒化物からなるグループから選ばれることを特徴とする請求項1に記載の磁気ランダムアクセスメモリの製造方法。
- 前記キャップ層を構成する材料が、炭素であることを特徴とする請求項1に記載の磁気ランダムアクセスメモリの製造方法。
- 前記キャップ層を選択的に除去するステップが、
前記キャップ層が前記第1絶縁層より速く除去され、前記第1絶縁層が前記スペーサ材料層より速く除去されるエッチング速度条件で行われることを特徴とする請求項1に記載の磁気ランダムアクセスメモリの製造方法。 - 前記キャップ層を選択的に除去するステップが、
前記キャップ層が前記スペーサ材料層より速く除去され、前記スペーサ材料層が前記第1絶縁層より速く除去されるエッチング速度条件で行われることを特徴とする請求項1に記載の磁気ランダムアクセスメモリの製造方法。 - 集積回路コンポーネントを含む半導体基板上に磁気抵抗メモリセルを形成することによる磁気抵抗メモリの製造方法であって、順に、
最上層としてキャップ層を備えた磁気抵抗メモリ層を構成する複数の突起を形成するステップと、
前記複数の突起の上面及び側面を覆うスペーサ材料層を成膜するステップと、
前記スペーサ材料層のエッチングを行うことにより、前記突起の側面に沿ってスペーサを形成するステップと、
前記突起、前記スペーサ及び前記基板上に絶縁材料層を形成するステップと、
少なくとも前記突起上の前記絶縁材料層を除去するステップと、
前記キャップ層の選択的なエッチングを行うステップと、
メタライゼーション処理を行い、前記磁気抵抗メモリ層とのコンタクトを形成するステップとを含むことを特徴とする磁気抵抗メモリの製造方法。 - 前記キャップ層が、非金属で構成されていることを特徴とする請求項15に記載の磁気抵抗メモリの製造方法。
- 前記キャップ層を構成する材料が、炭素、シリコン、シリコン炭化物及びシリコンリッチのシリコン酸窒化物からなるグループから選ばれることを特徴とする請求項15に記載の磁気抵抗メモリの製造方法。
- 前記スペーサの材料が、シリコン炭化物及びシリコン窒化物からなるグループから選ばれることを特徴とする請求項15に記載の磁気抵抗メモリの製造方法。
- 前記絶縁材料層が、TEOS(テトラエチルオルソシリケート)から生成されたシリコン酸化物で構成されていることを特徴とする請求項15に記載の磁気抵抗メモリの製造方法。
- 前記キャップ層の選択的なエッチングを行うステップが、
前記キャップ層のエッチング速度が前記スペーサ材料層のエッチング速度より速く、前記スペーサ材料層のエッチング速度が前記絶縁材料層のエッチング速度より速いエッチング条件で行われることを特徴とする請求項15に記載の磁気抵抗メモリの製造方法。 - 前記キャップ層の選択的なエッチングを行うステップが、
前記キャップ層のエッチング速度が前記絶縁材料層のエッチング速度より速く、前記絶縁材料層のエッチング速度が前記スペーサ材料層のエッチング速度より速いエッチング条件で行われることを特徴とする請求項15に記載の磁気抵抗メモリの製造方法。 - パターニング及びエッチングにより、犠牲キャップを構成する最上層を有する磁気メモリ層の積層体を形成するステップと、
前記積層体上及び周囲に、連続した絶縁層を形成するステップと、
少なくとも前記積層体上の前記絶縁層を除去することにより、前記犠牲キャップを露出させるステップと、
露出した前記犠牲キャップを除去するステップと、
前記磁気メモリ層への電気的な接続を構成するステップとを含むことを特徴とする磁気メモリセルの製造方法。 - 少なくとも前記積層体上の前記絶縁層を除去するステップが、
前記絶縁層を化学的機械研磨によって平坦化し、前記犠牲キャップを露出させる処理を含むことを特徴とする請求項22に記載の磁気メモリセルの製造方法。 - 前記電気的な接続を構成するステップが、
前記犠牲キャップを除去した後、全面を覆う金属層の成膜、パターニング及び前記金属層のエッチングを行うことにより、導電ラインを形成する処理を含むことを特徴とする請求項23に記載の磁気メモリセルの製造方法。 - 少なくとも前記積層体上の前記絶縁層を除去するステップが、
前記犠牲キャップを選択的にエッチしないエッチング方法を使用し、前記絶縁層に開口部を形成するエッチングを含むことを特徴とする請求項22に記載の磁気メモリセルの製造方法。 - 前記電気的な接続を構成するステップが、
前記犠牲キャップを除去した後、前記開口部を金属で埋める処理を含むことを特徴とする請求項25に記載の磁気メモリセルの製造方法。 - 前記絶縁層を形成する前に、前記積層体の周りにスペーサを形成するステップを、さらに含むことを特徴とする請求項22に記載の磁気メモリセルの製造方法。
- トップ面にキャップ層を備えたトンネル磁気抵抗(TMR)構造を構成する水平な層で構成された積層体を形成するステップと、
前記キャップ層を含む前記積層体上及び周囲に、第1絶縁層を成膜するステップと、
前記第1絶縁層及び前記積層体のトップ面である前記キャップ層の面を平坦化するステップと、
前記第1絶縁層及び前記積層体上に第2絶縁層を成膜するステップと、
エッチングにより、前記キャップ層及びその周囲領域に、前記第2絶縁層を貫通するトレンチを形成するステップと、
前記キャップ層を除去するステップと、
金属を成膜することにより、前記キャップ層の除去によって形成された開口部及び前記トレンチを埋めるステップとを含むことを特徴とするトンネル磁気抵抗メモリセルの製造方法。 - メモリセル上にT形の断面形状を有する銅のラインを含むトンネル磁気抵抗(TMR)MRAMに対するメタライゼーションであって、
前記ラインの側面が絶縁材料に接触し、各ラインの少なくとも最底面部が、前記メモリセルのトップ面に接触し、
前記メモリセルの周囲に絶縁用のスペーサが形成され、前記スペーサが、前記メモリセルより高く、前記銅のラインの側面の少なくとも一部と接触していることを特徴とするトンネル磁気抵抗MRAMに対するメタライゼーション。 - 前記絶縁材料が、TEOS(テトラエチルオルソシリケート)から生成されたシリコン酸化物を含むことを特徴とする請求項29に記載のトンネル磁気抵抗MRAM用メタライゼーション。
- 前記スペーサが、シリコン炭化物及びシリコン窒化物からなるグループから選ばれた材料で構成されていることを特徴とする請求項29に記載のトンネル磁気抵抗MRAM用メタライゼーション。
- 基板からの突起として構成され、トップ面及び側面を備えた磁気メモリセルと、
前記磁気メモリセルの側面に接触する部分及び前記磁気メモリセルのトップ面の上方に延びる部分を備えた、前記磁気メモリセルの周囲のスペーサと、
前記スペーサの内面間に位置する前記磁気メモリセルのトップ面に接触し、前記スペーサのトップ面上に広がり、前記スペーサの内面によって画定された幅を越えて広がる上部領域を有する電極とを備えていることを特徴とする磁気ランダムアクセスメモリアレイ素子。 - 前記磁気メモリセルが、TMR構造であることを特徴とする請求項32に記載の磁気ランダムアクセスメモリアレイ素子。
- 前記スペーサが、シリコン炭化物及びシリコン窒化物からなるグループから選ばれた材料で構成されていることを特徴とする請求項32に記載の磁気ランダムアクセスメモリアレイ素子。
- 前記電極が、銅及びアルミニウムからなるグループから選ばれた材料で構成されていることを特徴とする請求項32に記載の磁気ランダムアクセスメモリアレイ素子。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/135,921 US6783995B2 (en) | 2002-04-30 | 2002-04-30 | Protective layers for MRAM devices |
PCT/US2003/012675 WO2003094182A1 (en) | 2002-04-30 | 2003-04-21 | Method of forming mram devices |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2005524238A JP2005524238A (ja) | 2005-08-11 |
JP4378631B2 true JP4378631B2 (ja) | 2009-12-09 |
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US (2) | US6783995B2 (ja) |
EP (2) | EP1793400B1 (ja) |
JP (1) | JP4378631B2 (ja) |
KR (2) | KR100755240B1 (ja) |
CN (1) | CN100338700C (ja) |
AT (1) | ATE363720T1 (ja) |
AU (1) | AU2003239168A1 (ja) |
DE (1) | DE60314129T2 (ja) |
TW (1) | TWI238439B (ja) |
WO (1) | WO2003094182A1 (ja) |
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2002
- 2002-04-30 US US10/135,921 patent/US6783995B2/en not_active Expired - Lifetime
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2003
- 2003-04-21 CN CNB038115417A patent/CN100338700C/zh not_active Expired - Lifetime
- 2003-04-21 AT AT03733885T patent/ATE363720T1/de not_active IP Right Cessation
- 2003-04-21 DE DE60314129T patent/DE60314129T2/de not_active Expired - Lifetime
- 2003-04-21 EP EP07005378.0A patent/EP1793400B1/en not_active Expired - Lifetime
- 2003-04-21 EP EP03733885A patent/EP1500116B1/en not_active Expired - Lifetime
- 2003-04-21 KR KR1020067019755A patent/KR100755240B1/ko active IP Right Grant
- 2003-04-21 JP JP2004502311A patent/JP4378631B2/ja not_active Expired - Lifetime
- 2003-04-21 AU AU2003239168A patent/AU2003239168A1/en not_active Abandoned
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- 2003-04-21 KR KR1020047017428A patent/KR100692417B1/ko active IP Right Grant
- 2003-04-22 TW TW092109371A patent/TWI238439B/zh not_active IP Right Cessation
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WO2003094182A1 (en) | 2003-11-13 |
EP1500116B1 (en) | 2007-05-30 |
US20030203510A1 (en) | 2003-10-30 |
KR20060107860A (ko) | 2006-10-16 |
TWI238439B (en) | 2005-08-21 |
KR100692417B1 (ko) | 2007-03-13 |
ATE363720T1 (de) | 2007-06-15 |
US7211849B2 (en) | 2007-05-01 |
EP1500116A1 (en) | 2005-01-26 |
DE60314129T2 (de) | 2008-01-24 |
US6783995B2 (en) | 2004-08-31 |
TW200405392A (en) | 2004-04-01 |
EP1793400A3 (en) | 2009-09-30 |
KR100755240B1 (ko) | 2007-09-04 |
EP1793400B1 (en) | 2014-01-08 |
CN1656580A (zh) | 2005-08-17 |
US20040264240A1 (en) | 2004-12-30 |
KR20050013543A (ko) | 2005-02-04 |
DE60314129D1 (de) | 2007-07-12 |
JP2005524238A (ja) | 2005-08-11 |
AU2003239168A1 (en) | 2003-11-17 |
EP1793400A2 (en) | 2007-06-06 |
CN100338700C (zh) | 2007-09-19 |
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