JP4363161B2 - 感放射線性樹脂組成物、並びに層間絶縁膜およびマイクロレンズの形成方法 - Google Patents

感放射線性樹脂組成物、並びに層間絶縁膜およびマイクロレンズの形成方法 Download PDF

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JP4363161B2
JP4363161B2 JP2003367211A JP2003367211A JP4363161B2 JP 4363161 B2 JP4363161 B2 JP 4363161B2 JP 2003367211 A JP2003367211 A JP 2003367211A JP 2003367211 A JP2003367211 A JP 2003367211A JP 4363161 B2 JP4363161 B2 JP 4363161B2
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Prior art keywords
radiation
methyl
resin composition
sensitive resin
meth
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JP2003367211A
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English (en)
Japanese (ja)
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JP2005134440A (ja
Inventor
公康 佐野
通則 西川
貴樹 蓑輪
英司 高本
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JSR Corp
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JSR Corp
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Priority to JP2003367211A priority Critical patent/JP4363161B2/ja
Priority to KR1020040086075A priority patent/KR101057883B1/ko
Priority to TW093132623A priority patent/TW200516347A/zh
Publication of JP2005134440A publication Critical patent/JP2005134440A/ja
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/022—Quinonediazides
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/022—Quinonediazides
    • G03F7/023—Macromolecular quinonediazides; Macromolecular additives, e.g. binders

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Materials For Photolithography (AREA)
JP2003367211A 2003-10-28 2003-10-28 感放射線性樹脂組成物、並びに層間絶縁膜およびマイクロレンズの形成方法 Expired - Lifetime JP4363161B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2003367211A JP4363161B2 (ja) 2003-10-28 2003-10-28 感放射線性樹脂組成物、並びに層間絶縁膜およびマイクロレンズの形成方法
KR1020040086075A KR101057883B1 (ko) 2003-10-28 2004-10-27 감방사선성 수지 조성물, 층간 절연막, 마이크로렌즈, 및 이들의 제조 방법
TW093132623A TW200516347A (en) 2003-10-28 2004-10-27 Radiation-sensitive resin composition, interlayer insulating film and microlens

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2003367211A JP4363161B2 (ja) 2003-10-28 2003-10-28 感放射線性樹脂組成物、並びに層間絶縁膜およびマイクロレンズの形成方法

Publications (2)

Publication Number Publication Date
JP2005134440A JP2005134440A (ja) 2005-05-26
JP4363161B2 true JP4363161B2 (ja) 2009-11-11

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ID=34645279

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JP2003367211A Expired - Lifetime JP4363161B2 (ja) 2003-10-28 2003-10-28 感放射線性樹脂組成物、並びに層間絶縁膜およびマイクロレンズの形成方法

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JP (1) JP4363161B2 (enrdf_load_stackoverflow)
KR (1) KR101057883B1 (enrdf_load_stackoverflow)
TW (1) TW200516347A (enrdf_load_stackoverflow)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20050113351A (ko) * 2004-05-27 2005-12-02 주식회사 동진쎄미켐 감광성 수지 조성물
CN1904736B (zh) * 2005-07-25 2012-06-13 日产化学工业株式会社 正型感光性树脂组合物和由其得到的固化膜
JP4696761B2 (ja) * 2005-08-02 2011-06-08 住友化学株式会社 感放射線性樹脂組成物
JP2008105999A (ja) 2006-10-25 2008-05-08 Idemitsu Kosan Co Ltd アダマンタン誘導体、その製造方法、樹脂組成物およびその硬化物
EP2109001B1 (en) 2007-01-22 2012-01-11 Nissan Chemical Industries, Ltd. Positive photosensitive resin composition
JP4905700B2 (ja) * 2007-05-16 2012-03-28 Ｊｓｒ株式会社 感放射線性樹脂組成物、層間絶縁膜およびマイクロレンズならびにそれらの形成方法
KR102069746B1 (ko) * 2012-11-30 2020-01-23 롬엔드하스전자재료코리아유한회사 포지티브형 감광성 수지 조성물 및 이로부터 제조된 경화막
US20140240645A1 (en) * 2013-02-27 2014-08-28 Samsung Display Co., Ltd. Photosensitive resin composition, display device using the same and method of manufacturing the display device
JP6218393B2 (ja) * 2013-02-28 2017-10-25 東京応化工業株式会社 層間絶縁膜用感光性樹脂組成物

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5919597A (en) * 1997-10-30 1999-07-06 Ibm Corporation Of Armonk Methods for preparing photoresist compositions
JP4524944B2 (ja) * 2001-03-28 2010-08-18 Ｊｓｒ株式会社 感放射線性樹脂組成物、その層間絶縁膜およびマイクロレンズの形成への使用、ならびに層間絶縁膜およびマイクロレンズ
JP3838626B2 (ja) * 2001-09-07 2006-10-25 東京応化工業株式会社 感光性樹脂組成物及びそれを用いたパターンの形成方法

Also Published As

Publication number Publication date
TW200516347A (en) 2005-05-16
KR20050040747A (ko) 2005-05-03
KR101057883B1 (ko) 2011-08-19
TWI338190B (enrdf_load_stackoverflow) 2011-03-01
JP2005134440A (ja) 2005-05-26

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