JP4343451B2 - Wire bonding equipment - Google Patents

Wire bonding equipment Download PDF

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Publication number
JP4343451B2
JP4343451B2 JP2001038970A JP2001038970A JP4343451B2 JP 4343451 B2 JP4343451 B2 JP 4343451B2 JP 2001038970 A JP2001038970 A JP 2001038970A JP 2001038970 A JP2001038970 A JP 2001038970A JP 4343451 B2 JP4343451 B2 JP 4343451B2
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Prior art keywords
substrate
intake
blowing
heat block
wire bonding
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JP2002246409A (en
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富視 高橋
修 湯澤
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Renesas Technology Corp
Shinkawa Ltd
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Renesas Technology Corp
Shinkawa Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
    • H01L24/78—Apparatus for connecting with wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/78—Apparatus for connecting with wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/78—Apparatus for connecting with wire connectors
    • H01L2224/7825—Means for applying energy, e.g. heating means
    • H01L2224/783—Means for applying energy, e.g. heating means by means of pressure
    • H01L2224/78301—Capillary
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/78—Apparatus for connecting with wire connectors
    • H01L2224/787—Means for aligning
    • H01L2224/78703—Mechanical holding means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/851—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector the connector being supplied to the parts to be connected in the bonding apparatus
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01004—Beryllium [Be]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01005—Boron [B]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01033—Arsenic [As]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01082—Lead [Pb]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Wire Bonding (AREA)

Description

【０００１】
【発明の属する技術分野】
本発明は、ワイヤボンディング装置に係り、特に基板又はリードフレームを加熱する時に発生する有機ガスを除去する有機ガス除去機構に関する。
【０００２】
【従来の技術】
基板又はリードフレーム（以下、基板と言う）には、接着剤を介して半導体チップが固着されている。そこで、ワイヤボンディング時にヒートブロックで基板を加熱すると、接着剤及び加熱された基板より有機ガスが発生し、この有機ガスが基板の電極及び半導体チップ表面に付着することで、ボンディング不着やモールド樹脂によるワイヤ剥がれが発生することがある。従来、ワイヤボンディング装置における有機ガス除去機構として、例えば特開昭５９−９２５３９号公報、特開平１１−１４５１８２号公報等が挙げられる。
【０００３】
特開昭５９−９２５３９号公報は、ヒートブロックの上方に配設されたノズルより清浄ガスを半導体チップに吹き付け、ヒートブロックの下方より前記清浄ガスと共に接着剤から発生した有機ガスを排気ポンプによって強制排気している。またノズルを配設しなく、排気ポンプのみで強制排気する場合も開示されている。
【０００４】
特開平１１−１４５１８２号公報は、ヒートブロックの側方に排気パイプを配設するか、又はヒートブロック自体に排気口を設け、排気パイプ又は排気口より有機ガスの吸引を行っている。また上記手段の他に、不活性ガスを基板に向けて吹き付ける複数の噴出口を持つノズルを付加した機構も開示されている。
【０００５】
【発明が解決しようとする課題】
ヒートブロックの下方又は側方より排気のみを行う方法は、リードフレームのように穴が開いているものには適用できる。しかし、基板のように穴が開いていないものには適用できない。またリードフレームの上方より気体をリードフレームの上面に吹き付けること、ヒートブロックの下方又は側方より排気する方法は、リードフレームのように穴が開いているものには適用できるが、基板のように穴が開いていないものには適用できない。また加熱されて上昇しようとする有機ガスに気体を吹き付けるので、有機ガスが拡散し舞い上がってキャピラリ、クランパ等に汚れが付着するという問題があった。
【０００６】
本発明の課題は、穴のない基板の上面から有機ガスが除去され、各電極上面及びキャピラリ、クランパ等を汚すことがないワイヤボンディング装置を提供することにある。
【０００７】
【課題を解決するための手段】
上記課題を解決するための本発明の第１の手段は、接着剤を介して半導体チップが搭載された基板等をガイドするガイド溝を有し、相対向して配設された一対のガイドレールと、前記一対のガイドレール間に配設され前記基板等を加熱するヒートブロックとを備えたワイヤボンディング装置において、前記一方のガイド溝の上方に前記基板等の上面に沿って気体を吹き出す吹き出し口を有する吹き出し手段を設け、他方のガイド溝の上方に前記吹き出し口に対向して吸気口を有する吸気手段を設け、前記ヒートブロックの側方に吸気機構を設けたことを特徴とする。
【０００９】
上記課題を解決するための本発明の第２の手段は、上記第１の手段において、前記ヒートブロックの上方に排気用ダクト機構を設けたことを特徴とする。
【００１０】
上記課題を解決するための本発明の第３の手段は、上記第１又は第２の手段において、前記吹き出し手段及び前記吸気手段は、それぞれ対応するガイドレール自体に設けられていることを特徴とする。
【００１１】
【発明の実施の形態】
本発明の第１の実施の形態を図１及び図２により説明する。基板又はリードフレーム等（以下、基板と言う）１には、接着剤２を介して半導体チップ３が固着されている。ワイヤボンディング装置は、ヒータ４を有し基板１を加熱するヒートブロック５と、このヒートブロック５の上方に配設されワイヤ６が挿通されたキャピラリ７と、キャピラリ７を保持するボンディングアーム８と、キャピラリ７の上方に配設されたワイヤ６を挟持するクランパ９と、クランパ９を開閉自在に保持するクランパアーム１０とを備えている。基板１は、相対向して配設されたガイドレール２０、２１のガイド溝２０ａ、２１ａによりガイドされながら順次間欠的又は連続的に図示しないフィーダで搬送される。以上は周知の構成であるので、これ以上の説明は省略する。
【００１２】
本実施の形態においては、ガイドレール２０、２１が次のような構造となっている。一方のガイドレール２０には、ガイド溝２０ａの上方に長穴状の吹き出し口２０ｂがガイド溝２０ａと平行に設けられている。ガイドレール２０の下面にはホース継手２２が設けられており、ガイドレール２０には吹き出し口２０ｂとホース継手２２のホース穴が連通するように気体供給路２０ｃが設けられている。ホース継手２２には、図示しないホースの一端が接続され、ホースの他端は図示しない電磁弁、バルブを介して気体供給源に接続されている。ここで、気体供給源はエア又は不活性ガスを供給するようになっている。
【００１３】
他方のガイドレール２１には、前記吹き出し口２０ｂに対向して長穴状の吸気口２１ｂが設けられている。即ち、吸気口２１ｂは、ガイド溝２１ａの上方に該ガイド溝２１ａと平行に設けられている。ガイドレール２１の下面にはホース継手２３が設けられており、ガイドレール２１には吸気口２１ｂとホース継手２３のホース穴が連通するように吸気路２１ｃが設けられている。ホース継手２３には、図示しないホースの一端が接続され、ホースの他端は図示しない電磁弁、バルブを介して真空供給源に接続されている。
【００１４】
次に作用について説明する。穴のない基板１はヒートブロック５で加熱されながら搬送され、ボンディング部においてキャピラリ７によって半導体チップ３の電極と基板１の電極との間をワイヤ６によって接続される。基板１がヒートブロック５によって加熱されると、接着剤２及び基板１自体の上面及び下面より有機ガスが発生する。
【００１５】
本実施の形態においては、吹き出し口２０ｂよりエア又は不活性ガス等の気体を吹き出させ、吸気口２１ｂより真空吸引している。ホース継手２２のホース穴に気体を供給すると、この気体は気体供給路２０ｃを通って吹き出し口２０ｂより基板１の上面に吹き出す。ホース継手２３のホース穴を真空吸引すると、吸気口２１ｂより前記気体と共に有機ガスを吸引する。即ち、吹き出し口２０ｂより基板１の上面に吹き出す気体により、前記したように上昇しようとする有機ガスは吸気口２１ｂの方に吹き付けられ、吸気口２１ｂは真空吸引しているので、前記したように気体と共に有機ガスが吸引される。
【００１６】
このように、ガイド溝２０ａ、２１ａの上方に相対向して設けられた一方の吹き出し口２０ｂより気体を吹き出し、他方の吸気口２１ｂより気体と共に有機ガスを吸引する構造であるので、基板１の上面に一方側より気体を吹き付け、他方側より気体と共に有機ガスを吸引するので、有機ガスが舞い上がることがなく、キャピラリ７、クランパ９等を汚すことがない。また穴がない基板１においては電極面に不着する有機ガスを綺麗に除去できる。
【００１７】
図３及び図４は、前記実施の形態に吸気機構３０及び吸気用ダクト機構４０を付加した第２の実施の形態を示す。
【００１８】
まず、吸気機構３０について説明する。ヒートブロック５の両側側方には吸引パイプ３１，３２が配設され、この吸引パイプ３１，３２の一端は連結パイプ３３で連結されている。吸引パイプ３１，３２には、上面に複数個の吸気口３１ａ、３２ａがそれぞれ形成され、この吸気口３１ａ、３２ａに連通するように連結パイプ３３側から吸気路３１ｂ、３２ｂが形成されている。連結パイプ３３には吸気路３１ｂ、３２ｂに連通するように吸気路３３ａが形成され、連結パイプ３３に図示しないホース継手が接続されている。ホース継手には、図示しないホースの一端が接続され、ホースの他端は図示しない電磁弁、バルブを介して真空供給源に接続されている。
【００１９】
前記した第１の実施の形態による吹き出し口２０ｂからの気体の吹き出し及び吸気口２１ｂからの真空吸引により、有機ガスの殆どを除去することができる。しかし、有機ガスがヒートブロック５の側方に僅かであるが流れる恐れがある。本実施の形態においては、ヒートブロック５の側方に流れる有機ガスを吸引パイプ３１，３２の吸気口３１ａ、３２ａより吸引することができる。
【００２０】
なお、図１乃至図４の各実施の形態においては、吹き出し口２０ｂ及び吸気口２１ｂを長穴状に形成したが、多数の丸穴であっても良いことは言うまでもない。
【００２１】
次に吸気用ダクト機構４０について説明する。クランパ９の上方には吸引用排気ダクト４１が配設されており、排気ダクト４１には排気口４１ａが形成されている。排気ダクト４１の排気口４１ａにはダクト支持ブロック４２が固定されており、ダクト支持ブロック４２には連結パイプ４３が固定されている。ダクト支持ブロック４２には、連結パイプ４３の吸気口４３ａが排気口４１ａに連通するように吸気路４２ａが形成されている。連結パイプ４３には、図示しないホースの一端が接続され、ホースの他端は図示しない電磁弁、バルブを介して真空供給源に接続されている。ワイヤ６は、図示しないワイヤスプールよりガイドローラ４４を介してクランパ９に導かれるので、排気ダクト４１にはワイヤ６の通り道にワイヤガイド４５が設けられている。
【００２２】
ところで、ワイヤボンディング装置には、ボンディング部に設けられたヒートブロック５の前後に図示しないプリヒートブロック及びアフターヒートブロックが配設されているのが一般的である。本実施の形態においては、ガイドレール２０、２１に設けた吹き出し口２０ｂ及び吸気口２１ｂは、ボンディング部のヒートブロック５のみに対応して設けた。このため、プリヒートブロック及びアフターヒートブロックの加熱によって僅かであるが有機ガスが発生することがある。このような有機ガスを吸気用ダクト機構４０の吸引用排気ダクト４１により吸引することにより、有機ガスをより完全に除去することができる。
【００２３】
また上記各実施の形態は、穴のない基板１に適用した場合に最も効果的であることは言うまでもない。
【００２４】
【発明の効果】
本発明は、一方のガイド溝の上方に前記基板等の上面に沿って気体を吹き出す吹き出し口を有する吹き出し手段を設け、他方のガイド溝の上方に前記吹き出し口に対向して吸気口を有する吸気手段を設けたので、穴のない基板の上面から有機ガスが除去され、各電極上面及びキャピラリ、クランパ等を汚すことがない。
【図面の簡単な説明】
【図１】本発明のワイヤボンディング装置の第１の実施の形態を示す断面図である。
【図２】（ａ）は吹き出し口を有するガイドレールを内側より見た図、（ｂ）は吸気口を有するガイドレールを内側より見た図である。
【図３】本発明のワイヤボンディング装置の第２の実施の形態を示す断面図である。
【図４】ワークを図示省略した図３の要部平面図である。
【符号の説明】
１ 基板
２ 接着剤
３ 半導体チップ
５ ヒートブロック
６ ワイヤ
７ キャピラリ
８ ボンディングアーム
９ クランパ
２０、２１ ガイドレール
２０ａ、２１ａ ガイド溝
２０ｂ 吹き出し口
２１ｂ 吸気口
３０ 吸気機構
３１、３２ 吸引パイプ
４０ 吸気用ダクト機構
４１ 吸引用排気ダクト[0001]
BACKGROUND OF THE INVENTION
The present invention relates to a wire bonding apparatus, and more particularly to an organic gas removal mechanism that removes organic gas generated when a substrate or a lead frame is heated.
[0002]
[Prior art]
A semiconductor chip is fixed to a substrate or a lead frame (hereinafter referred to as a substrate) via an adhesive. Therefore, when the substrate is heated by a heat block at the wire bonding, the organic gas is generated from the substrate that is adhesive and heating, by organic gas adheres to the electrode and the semiconductor chip surface of the substrate, by bonding non-delivery and a mold resin Wire peeling may occur. Conventionally, as an organic gas removal mechanism in a wire bonding apparatus, for example, JP-A-59-92539, JP-A-11-145182, and the like can be mentioned.
[0003]
JP-A-59-92539 discloses that a clean gas is blown onto a semiconductor chip from a nozzle disposed above a heat block, and an organic gas generated from the adhesive together with the clean gas is forced from below the heat block by an exhaust pump. Exhaust. Further, there is also disclosed a case where forced exhaust is performed only by an exhaust pump without providing a nozzle.
[0004]
In JP-A-11-145182, an exhaust pipe is provided on the side of the heat block, or an exhaust port is provided in the heat block itself, and organic gas is sucked from the exhaust pipe or the exhaust port. In addition to the above means, there is also disclosed a mechanism in which a nozzle having a plurality of jet ports for blowing an inert gas toward the substrate is added.
[0005]
[Problems to be solved by the invention]
The method of exhausting only from the lower side or the side of the heat block can be applied to those having holes such as lead frames. However, it cannot be applied to a substrate having no holes such as a substrate. Also, the method of blowing gas from the top of the lead frame to the top surface of the lead frame and exhausting from the bottom or side of the heat block can be applied to those with holes such as the lead frame, but like a substrate It cannot be applied to those that do not have holes. Further, since the gas is blown to the organic gas which is heated and rises, there is a problem that the organic gas diffuses and rises and dirt is attached to the capillary, the clamper and the like.
[0006]
An object of the present invention is to provide a wire bonding apparatus in which organic gas is removed from the upper surface of a substrate having no holes and the upper surfaces of electrodes, capillaries, clampers and the like are not soiled.
[0007]
[Means for Solving the Problems]
A first means of the present invention for solving the above-described problem is a pair of guide rails which are arranged opposite to each other and have guide grooves for guiding a substrate or the like on which a semiconductor chip is mounted via an adhesive. And a heat block that is disposed between the pair of guide rails and that heats the substrate and the like, and a blowout port that blows gas along the upper surface of the substrate and the like above the one guide groove And a suction unit having an intake port opposite to the blowout port, and an intake mechanism provided on the side of the heat block .
[0009]
The second means of the present invention for solving the above-mentioned problems is characterized in that, in the first means , an exhaust duct mechanism is provided above the heat block.
[0010]
A third means of the present invention for solving the above-described problems is characterized in that, in the first or second means , the blowing means and the intake means are provided on the corresponding guide rails themselves. To do.
[0011]
DETAILED DESCRIPTION OF THE INVENTION
A first embodiment of the present invention will be described with reference to FIGS. A semiconductor chip 3 is fixed to a substrate or a lead frame 1 (hereinafter referred to as a substrate) 1 with an adhesive 2. The wire bonding apparatus includes a heat block 5 having a heater 4 for heating the substrate 1, a capillary 7 disposed above the heat block 5 through which the wire 6 is inserted, a bonding arm 8 for holding the capillary 7, A clamper 9 that sandwiches the wire 6 disposed above the capillary 7 and a clamper arm 10 that holds the clamper 9 so as to be freely opened and closed are provided. The substrate 1 is conveyed intermittently or continuously by a feeder (not shown) while being guided by the guide grooves 20a and 21a of the guide rails 20 and 21 arranged to face each other. Since the above is a known configuration, further explanation is omitted.
[0012]
In the present embodiment, the guide rails 20 and 21 have the following structure. One guide rail 20 is provided with a slot-like outlet 20b above the guide groove 20a in parallel with the guide groove 20a. A hose joint 22 is provided on the lower surface of the guide rail 20, and a gas supply path 20 c is provided on the guide rail 20 so that the outlet 20 b communicates with the hose hole of the hose joint 22. One end of a hose (not shown) is connected to the hose joint 22, and the other end of the hose is connected to a gas supply source via a solenoid valve and a valve (not shown). Here, the gas supply source supplies air or inert gas.
[0013]
The other guide rail 21 is provided with a long hole-shaped air inlet 21b opposite to the outlet 20b. That is, the air inlet 21b is provided above the guide groove 21a in parallel with the guide groove 21a. A hose joint 23 is provided on the lower surface of the guide rail 21, and an intake passage 21 c is provided on the guide rail 21 so that the intake port 21 b and the hose hole of the hose joint 23 communicate with each other. One end of a hose (not shown) is connected to the hose joint 23, and the other end of the hose is connected to a vacuum supply source via a solenoid valve and a valve (not shown).
[0014]
Next, the operation will be described. The substrate 1 without a hole is conveyed while being heated by the heat block 5, and the electrode of the semiconductor chip 3 and the electrode of the substrate 1 are connected by a wire 6 by a capillary 7 in a bonding portion. When the substrate 1 is heated by the heat block 5, organic gas is generated from the upper and lower surfaces of the adhesive 2 and the substrate 1 itself.
[0015]
In the present embodiment, a gas such as air or an inert gas is blown out from the blowout port 20b and vacuumed from the intake port 21b. When gas is supplied to the hose hole of the hose joint 22, this gas blows out through the gas supply path 20c to the upper surface of the substrate 1 from the outlet 20b. When the hose hole of the hose joint 23 is vacuum-sucked, organic gas is sucked together with the gas from the air inlet 21b. That is, the organic gas which is going to rise as described above is blown toward the intake port 21b by the gas blown out from the blowing port 20b to the upper surface of the substrate 1, and the intake port 21b is vacuum-sucked as described above. Organic gas is sucked together with the gas.
[0016]
In this way, the structure is such that gas is blown out from one blowout port 20b provided opposite to each other above the guide grooves 20a and 21a, and organic gas is sucked together with the gas from the other intake port 21b. Since gas is blown onto the upper surface from one side and organic gas is sucked together with the gas from the other side, the organic gas does not rise, and the capillary 7, the clamper 9 and the like are not soiled. Further, in the substrate 1 having no holes, the organic gas that does not adhere to the electrode surface can be removed cleanly.
[0017]
3 and 4 show a second embodiment in which an intake mechanism 30 and an intake duct mechanism 40 are added to the above-described embodiment.
[0018]
First, the intake mechanism 30 will be described. Suction pipes 31 and 32 are disposed on both sides of the heat block 5, and one ends of the suction pipes 31 and 32 are connected by a connecting pipe 33. A plurality of intake ports 31a and 32a are formed on the upper surfaces of the suction pipes 31 and 32, and intake passages 31b and 32b are formed from the connection pipe 33 side so as to communicate with the intake ports 31a and 32a. An intake passage 33 a is formed in the connection pipe 33 so as to communicate with the intake passages 31 b and 32 b, and a hose joint (not shown) is connected to the connection pipe 33. One end of a hose (not shown) is connected to the hose joint, and the other end of the hose is connected to a vacuum supply source via a solenoid valve and a valve (not shown).
[0019]
Most of the organic gas can be removed by blowing out the gas from the blowing port 20b and vacuum suction from the suction port 21b according to the first embodiment. However, a slight amount of organic gas may flow to the side of the heat block 5. In the present embodiment, the organic gas flowing to the side of the heat block 5 can be sucked from the suction ports 31a and 32a of the suction pipes 31 and 32.
[0020]
In each of the embodiments shown in FIGS. 1 to 4, the air outlet 20b and the air inlet 21b are formed in a long hole shape, but it goes without saying that a large number of round holes may be used.
[0021]
Next, the intake duct mechanism 40 will be described. A suction exhaust duct 41 is disposed above the clamper 9, and an exhaust port 41 a is formed in the exhaust duct 41. A duct support block 42 is fixed to the exhaust port 41 a of the exhaust duct 41, and a connection pipe 43 is fixed to the duct support block 42. An intake passage 42 a is formed in the duct support block 42 so that the intake port 43 a of the connection pipe 43 communicates with the exhaust port 41 a. One end of a hose (not shown) is connected to the connection pipe 43, and the other end of the hose is connected to a vacuum supply source via a solenoid valve and a valve (not shown). Since the wire 6 is guided from a wire spool (not shown) to the clamper 9 via the guide roller 44, a wire guide 45 is provided on the exhaust duct 41 in the way of the wire 6.
[0022]
Incidentally, in a wire bonding apparatus, a preheat block and an after heat block (not shown) are generally arranged before and after the heat block 5 provided in the bonding portion. In the present embodiment, the air outlet 20b and the air inlet 21b provided in the guide rails 20 and 21 are provided only for the heat block 5 of the bonding portion. For this reason, a slight amount of organic gas may be generated by heating the preheat block and the afterheat block. By sucking such organic gas through the suction exhaust duct 41 of the intake duct mechanism 40, the organic gas can be more completely removed.
[0023]
Needless to say, the above embodiments are most effective when applied to the substrate 1 without holes.
[0024]
【The invention's effect】
The present invention provides a blowing means having a blowing port for blowing gas along the upper surface of the substrate or the like above one guide groove, and an intake having an intake port facing the blowing port above the other guide groove. Since the means is provided, the organic gas is removed from the upper surface of the substrate having no holes, and the upper surfaces of the electrodes, capillaries, clampers and the like are not soiled.
[Brief description of the drawings]
FIG. 1 is a cross-sectional view showing a first embodiment of a wire bonding apparatus of the present invention.
2A is a view of a guide rail having a blow-out opening as viewed from the inside, and FIG. 2B is a view of the guide rail having an intake opening as viewed from the inside.
FIG. 3 is a cross-sectional view showing a second embodiment of the wire bonding apparatus of the present invention.
4 is a plan view of the main part of FIG. 3 with a workpiece omitted.
[Explanation of symbols]
DESCRIPTION OF SYMBOLS 1 Board | substrate 2 Adhesive 3 Semiconductor chip 5 Heat block 6 Wire 7 Capillary 8 Bonding arm 9 Clamper 20, 21 Guide rail 20a, 21a Guide groove 20b Outlet 21b Inlet 30 Intake mechanism 31, 32 Intake pipe 40 Intake duct mechanism 41 Exhaust duct for suction

Claims (3)

接着剤を介して半導体チップが搭載された基板等をガイドするガイド溝を有し、相対向して配設された一対のガイドレールと、前記一対のガイドレール間に配設され前記基板等を加熱するヒートブロックとを備えたワイヤボンディング装置において、前記一方のガイド溝の上方に前記基板等の上面に沿って気体を吹き出す吹き出し口を有する吹き出し手段を設け、他方のガイド溝の上方に前記吹き出し口に対向して吸気口を有する吸気手段を設け、前記ヒートブロックの側方に吸気機構を設けたことを特徴とするワイヤボンディング装置。  A guide groove for guiding a substrate or the like on which a semiconductor chip is mounted via an adhesive, and a pair of guide rails disposed opposite to each other, and the substrate or the like disposed between the pair of guide rails. In a wire bonding apparatus including a heat block for heating, a blowing unit having a blowing port for blowing gas along an upper surface of the substrate or the like is provided above the one guide groove, and the blowing is provided above the other guide groove. A wire bonding apparatus characterized in that an intake means having an intake opening is provided opposite to the opening, and an intake mechanism is provided on a side of the heat block. 接着剤を介して半導体チップが搭載された基板等をガイドするガイド溝を有し、相対向して配設された一対のガイドレールと、前記一対のガイドレール間に配設され前記基板等を加熱するヒートブロックとを備えたワイヤボンディング装置において、前記一方のガイド溝の上方に前記基板等の上面に沿って気体を吹き出す吹き出し口を有する吹き出し手段を設け、他方のガイド溝の上方に前記吹き出し口に対向して吸気口を有する吸気手段を設け、前記ヒートブロックの側方に吸気機構を設け、前記ヒートブロックの上方に排気用ダクト機構を設けたことを特徴とするワイヤボンディング装置。  A guide groove for guiding a substrate or the like on which a semiconductor chip is mounted via an adhesive, and a pair of guide rails disposed opposite to each other, and the substrate or the like disposed between the pair of guide rails. In a wire bonding apparatus including a heat block for heating, a blowing unit having a blowing port for blowing gas along an upper surface of the substrate or the like is provided above the one guide groove, and the blowing is provided above the other guide groove. A wire bonding apparatus characterized in that an intake means having an intake port is provided opposite to the opening, an intake mechanism is provided on a side of the heat block, and an exhaust duct mechanism is provided above the heat block. 前記吹き出し手段及び前記吸気手段は、それぞれ対応するガイドレール自体に設けられていることを特徴とする請求項１又は２記載のワイヤボンディング装置。The wire bonding apparatus according to claim 1 or 2, wherein the blowing means and the intake means are provided on the corresponding guide rails themselves.
JP2001038970A 2001-02-15 2001-02-15 Wire bonding equipment Expired - Fee Related JP4343451B2 (en)

Priority Applications (1)

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Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
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JP4343451B2 true JP4343451B2 (en) 2009-10-14

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111755379A (en) * 2020-07-14 2020-10-09 深圳新益昌科技股份有限公司 Jumping sheet taking and placing device

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Publication number Priority date Publication date Assignee Title
US7182793B2 (en) * 2004-01-22 2007-02-27 Asm Technology Singapore Pty Ltd. System for reducing oxidation of electronic devices
JP2008147386A (en) * 2006-12-08 2008-06-26 Juki Corp Surface mounting device
JP5049321B2 (en) * 2009-07-30 2012-10-17 株式会社カイジョー Work clamp and wire bonding equipment
JP5254427B2 (en) * 2011-11-18 2013-08-07 株式会社カイジョー Wire bonding equipment

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111755379A (en) * 2020-07-14 2020-10-09 深圳新益昌科技股份有限公司 Jumping sheet taking and placing device
CN111755379B (en) * 2020-07-14 2020-12-29 深圳新益昌科技股份有限公司 Jumping sheet taking and placing device

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