JP4318773B2 - ポジトロン断層撮像装置 - Google Patents

ポジトロン断層撮像装置 Download PDF

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Publication number
JP4318773B2
JP4318773B2 JP33649798A JP33649798A JP4318773B2 JP 4318773 B2 JP4318773 B2 JP 4318773B2 JP 33649798 A JP33649798 A JP 33649798A JP 33649798 A JP33649798 A JP 33649798A JP 4318773 B2 JP4318773 B2 JP 4318773B2
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image
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gamma rays
positron
planar image
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Japanese (ja)
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JP2000147127A5 (enrdf_load_stackoverflow
JP2000147127A (ja
Inventor
慎一 井上
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Hitachi Healthcare Manufacturing Ltd
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Hitachi Medical Corp
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JP33649798A 1998-11-12 1998-11-12 ポジトロン断層撮像装置 Expired - Fee Related JP4318773B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP33649798A JP4318773B2 (ja) 1998-11-12 1998-11-12 ポジトロン断層撮像装置

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Application Number Priority Date Filing Date Title
JP33649798A JP4318773B2 (ja) 1998-11-12 1998-11-12 ポジトロン断層撮像装置

Publications (3)

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JP2000147127A JP2000147127A (ja) 2000-05-26
JP2000147127A5 JP2000147127A5 (enrdf_load_stackoverflow) 2005-12-15
JP4318773B2 true JP4318773B2 (ja) 2009-08-26

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JP33649798A Expired - Fee Related JP4318773B2 (ja) 1998-11-12 1998-11-12 ポジトロン断層撮像装置

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Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7626171B2 (en) * 2006-01-09 2009-12-01 Koninklijke Philips Electronics N.V. Method of constructing time-in-flight pet images
JP5437791B2 (ja) * 2006-04-25 2014-03-12 コーニンクレッカ フィリップス エヌ ヴェ （Ｂｉ）ＣＭＯＳプロセスによるアバランシェフォトダイオードの製造方法
JP6354510B2 (ja) * 2014-10-03 2018-07-11 株式会社島津製作所 放射線断層撮影装置

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