JP4313318B2 - Polishing head position adjusting method and polishing head position adjusting jig of substrate processing apparatus - Google Patents

Description

  The present invention relates to a substrate processing apparatus, in particular, a polishing head that removes a film that becomes a source of contamination that adheres to a surface roughness or a substrate peripheral portion generated in a peripheral portion (bevel portion, edge portion and notch portion) of a substrate such as a semiconductor wafer. The present invention relates to a polishing head position adjusting method and a polishing head position adjusting jig of a substrate processing apparatus provided.

  In recent years, with the miniaturization of semiconductor elements, particle management has become increasingly important. One of the major problems in managing particles is dust generation due to surface roughness that occurs at the bevel and edge portions of the semiconductor wafer (substrate) during the manufacturing process of the semiconductor device. Here, as shown in FIG. 1, the bevel portion B means a portion having a curvature at the end portion of the semiconductor wafer W, and the edge portion E is from the bevel portion B to the center side of the semiconductor wafer W. It means a portion where the surface of about several mm facing is flat.

For example, in the RIE (Reactive Ion Etching) process in which the trench (deep trench) of the trench capacitor is formed on the surface of the Si wafer, the surface roughness due to the processing described above occurs. In the RIE process, first, as shown in FIG. 2A, a hard mask composed of a laminated film of the SiN film 101 and the SiO ₂ film 102 is formed on the Si wafer 100, and the Si wafer 100 is formed using the hard mask as a mask. Is etched by RIE to form a deep trench 103 as shown in FIG.

  In this RIE process, by-products generated during etching adhere to the bevel portion and the edge portion of the Si wafer 100, and this acts as an etching mask, and as shown in FIG. The needle-like protrusion 104 may be formed on the part and the edge part. In particular, when the deep trench 103 having an opening diameter of the order of submicron and an aspect ratio of several tens, which is very high, is to be formed with high accuracy, the above-described needle-like protrusion 104 is formed with a bevel portion and an edge portion depending on the process conditions. Will inevitably occur.

  The height of the needle-like protrusion 104 varies depending on the position, but it is close to 10 μm at the maximum, causing damage during the transfer of the Si wafer 100 or in the process and generation of particles. Since such particles lead to a decrease in product yield, it is necessary to remove the needle-like protrusions 104 formed on the bevel portion.

There are various conventional methods for removing the needle-like protrusions 104 formed on the bevel portion of the Si wafer 100, and there is a substrate processing apparatus described in Patent Document 1 as an example. The substrate processing apparatus is a substrate processing apparatus that presses a polishing tape against a predetermined portion of a substrate and polishes the substrate by sliding contact between the polishing tape and the substrate, and presses the polishing tape against an edge portion of the substrate. And a polishing unit including an edge portion polishing mechanism for polishing the edge portion, and a bevel portion polishing mechanism for pressing the polishing tape against the bevel portion of the substrate to polish the bevel portion.
JP 2004-241434 A

  Since the bevel portion polishing mechanism (bevel polishing head) of the substrate processing apparatus described in Patent Document 1 only needs to be in contact with the semiconductor wafer horizontally, the level should be adjusted with a level or the like. Further, since it was considered as a mechanism capable of absorbing variations to some extent by rubber tension or the like, individual fine adjustment was not performed. In addition, the evaluation method was not established to the extent that there was a difference between machines, and fine differences did not become a problem.

  The conventional technique has a drawback that even if a plurality of bevel polishing mechanisms are provided, each bevel polishing mechanism polishes in a different polishing direction, so that the polishing rate and the polishing range vary greatly. In addition, the processing end detection mechanism for observing the torque value due to the rotation of the substrate and detecting the end of the processing for managing the end of the polishing also has a machine difference, and the processing time is unstable. For example, even if processing is completed in 45 seconds in one device, another device takes 65 seconds.

  The present invention has been made in view of the above points. The present invention eliminates the above problems, and even if a plurality of bevel polishing heads are provided, there is no variation in the polishing rate and polishing range, and the torque value due to substrate rotation is observed. An object of the present invention is to provide a polishing head position adjusting method and a polishing head position adjusting jig of a substrate processing apparatus in which a processing end detection mechanism for detecting the end of processing has little mechanical difference and processing time is stable.

In order to solve the above problems, the invention described in claim 1 includes a substrate holding rotary table that holds and rotates a substrate, and a polishing head that polishes at least a bevel portion of the substrate held on the substrate holding rotary table . A polishing head position adjusting method of a substrate processing apparatus for adjusting a position of the polishing head of a substrate processing apparatus having a side polishing mechanism , wherein a jig is used for position adjustment of the polishing head for polishing a bevel portion, A linear portion extending in the radial direction above the substrate and passing through the center of the substrate, and a plurality of substrate surface detecting means for detecting positions of the substrate surface attached to the linear portion at a predetermined interval or pressure acting on the substrate surface A plurality of pressure detection means for detecting the position of the polishing head, the dimensional difference to the substrate surface of the plurality of substrate surface detection means is zero or a predetermined value or the pressure difference detected by the plurality of pressure detection means As a B or a predetermined value, and performing by adjusting the mounting angle of the polishing head to the side surface polishing mechanism. Thus, by adjusting the position of the polishing head using a jig and adjusting the polishing head angle to 0.1 deg, variations in the polishing range and the polishing speed are reduced.

The invention described in Claim 2 is a side polishing equipped with the substrate holding and rotating table that rotates while holding the substrate, the substrate held by the substrate holding and rotating table Migaku Ken head you polishing at least the bevel portion A polishing head position adjusting method of a substrate processing apparatus for adjusting a position of the polishing head of a substrate processing apparatus having a mechanism , wherein a jig is used for position adjustment of the polishing head for polishing a bevel portion , When the edge engages with the polishing head and is held by the substrate holding rotary table, the center in the thickness direction on the side facing the substrate bevel of the polishing head is the center of the substrate held by the substrate holding rotary table. A plate-like member having a thickness coinciding with the center in the thickness direction is provided, and the position adjustment of the polishing head is performed by engaging the edge of the plate-like member with the polishing head and rotating the polishing member to the side polishing mechanism. Adjust head mounting angle And performing by Rukoto. Thus, by adjusting the position of the polishing head using a jig and adjusting the polishing head angle to 0.1 deg, the difference between apparatuses can be reduced.

The invention described in Claim 3 is a side polishing equipped with the substrate holding and rotating table that rotates while holding the substrate, the Migaku Ken head you polishing at least the bevel portion of the substrate held by the substrate holding and rotating table A polishing head position adjusting method of a substrate processing apparatus for adjusting a position of the polishing head of a substrate processing apparatus having a mechanism , wherein a jig for adjusting the position of the polishing head when polishing a bevel portion is prepared A plurality of substrate surface detecting means or substrate surfaces for detecting a position of the substrate surface in which the position of the polishing head is attached to the jig at a predetermined interval, the step of holding the jig with the substrate holding rotary table and the polishing head; A step of measuring contact amount or pressure by a plurality of pressure detecting means for detecting pressure acting on the surface, and polishing to the side polishing mechanism so that the measured contact amount difference or pressure difference becomes zero or a predetermined value. Characterized by comprising the step of adjusting the position of the polishing head by adjusting the mounting angle of the head.

According to a fourth aspect of the present invention, in the method for adjusting a polishing head position of the substrate processing apparatus according to the third aspect , the step of adjusting the position of the polishing head includes a step of moving the substrate holding rotary table up and down. It is characterized by.

The invention described in claim 5 includes a polishing mechanism including a substrate holding rotary table that holds and rotates a substrate, and a polishing head that polishes at least a bevel portion of the substrate held by the substrate holding rotary table. A method for adjusting the position of the polishing head of the substrate processing apparatus for adjusting the position of the polishing head of the substrate processing apparatus, the step of preparing a jig for adjusting the position of the polishing head when polishing the bevel portion; The step of holding the jig by the substrate holding rotary table and the polishing head, and adjusting the angle of the polishing head attached to the side polishing mechanism by rotating the substrate holding rotary table to adjust the position of the polishing head. It consists of a process .

According to a sixth aspect of the present invention, there is provided a side surface polishing mechanism comprising a substrate holding rotary table that holds and rotates a substrate, and a polishing head that polishes at least a bevel portion of the substrate held on the substrate holding rotary table. A polishing head position adjusting jig for adjusting the position of the polishing head of a substrate processing apparatus provided, wherein the jig includes a linear portion extending in a radial direction above the substrate and passing through the center of the substrate, and the linear portion A plurality of substrate surface detecting means for detecting the position of the substrate surface attached at a predetermined interval, or a plurality of dial gauges for detecting pressure acting on the substrate surface, and mounted on the polishing head. To do.

According to a seventh aspect of the present invention, there is provided a side surface polishing mechanism including a substrate holding rotary table that holds and rotates a substrate, and a polishing head that polishes at least a bevel portion of the substrate held on the substrate holding rotary table. A polishing head position adjusting jig for adjusting the position of the polishing head of the substrate processing apparatus provided, wherein the jig engages with the polishing head and is held by the substrate holding rotary table. A polishing head is provided with a plate-like member having a thickness in which the center in the thickness direction on the side facing the substrate bevel portion of the polishing head coincides with the center in the thickness direction of the substrate held by the substrate holding rotary table. It is characterized by being engaged and rotated .

According to the first to seventh aspects of the invention, the following excellent effects can be obtained.

  (1) Since the position of the polishing head is adjusted using a jig, the angle of the polishing head can be adjusted, the polishing range is limited, the polishing time is shortened, the throughput is increased, and the consumption of consumable parts is reduced. The processing (polishing) cost per substrate can be reduced.

  (2) Since the angle of the polishing head can be adjusted, the processing end point detection mechanism that detects the end of polishing by observing the rotational torque value of the substrate is also stable, and the difference in processing time between apparatuses is reduced.

Further, according to the third to fifth aspects of the present invention, since the jig for adjusting the position of the polishing head is held by the substrate holding rotary table and the polishing head, preparation for adjusting the polishing head is performed. Can be simplified and the adjustment time can be shortened. Further, according to the third and fourth aspects of the invention, since the position of the polishing head is adjusted based on the measurement result of the position of the polishing head, the polishing position of at least the bevel portion of the substrate can be accurately set. .

  Embodiments of the present invention will be described below with reference to the drawings. FIG. 3 is a view for carrying out the polishing head position adjusting method (angle adjusting method) of the substrate processing apparatus according to the present invention. Reference numeral 30 denotes a side surface polishing mechanism having a polishing head 32 for polishing the bevel portion B (see FIG. 1) of the semiconductor wafer W. Reference numeral 20 denotes an adjusting mechanism for adjusting the angle of the polishing head. And a substrate holding rotary table that rotates.

  The adjustment mechanism 20 includes a jig 21. The jig 21 includes a rod-like straight portion 21a and an attachment portion 21b whose end is bent at a right angle, and dial gauges 22 and 23 are attached to the straight portion 21a at predetermined intervals. The dial gauges 22 and 23 are provided with contact rods 24 and 25, respectively, and the tips of the contact rods 24 and 25 are in contact with the upper surface of the semiconductor wafer W (or a dummy wafer having the same thickness as the semiconductor wafer). The dimensions of the upper surface are measured. The attachment portion 21b of the jig 21 of the adjustment mechanism 20 can be mounted in a gap 32a (detailed later) of the polishing head 32. The substrate holding rotary table 10 includes a substrate holding table 11 and can be rotated in the direction of arrow B by a support shaft 12. The substrate holding table 11 is a vacuum suction mechanism that will be described in detail later, and holds the semiconductor wafer W on its upper surface so that it can rotate as indicated by an arrow B.

The contact gauges 24 and 25 of the dial gauges 22 and 23 are brought into contact with the upper surface of the semiconductor wafer W (or a dummy wafer having the same thickness as the semiconductor wafer) attracted and held on the substrate holding table 11 of the substrate holding rotary table 10, and the dial gauge. 22 and 23 is adjusted about a fulcrum 31 the mounting angle of the polishing head 32 as shown by an arrow C by the press allowance difference (dimensions to the upper surface of the semiconductor wafer W) shown. That is, the polishing head 32 is rotated around the fulcrum 31 so that the pressing allowance of the dial gauges 22 and 23 becomes a predetermined value, and the mounting angle of the polishing head 32 is adjusted and fixed. As a result, the mounting angle of the polishing head can be adjusted to 0.1 deg. When the polishing head 32 is adjusted horizontally, it is adjusted so that the pushing allowance indicated by the dial gauges 22 and 23 becomes zero. As will be described in detail later, when an elastic member or polishing tape is attached to the polishing head 32, the polishing tape contacts the bevel portion B of the semiconductor W within a predetermined range.

  FIGS. 4 and 5 are diagrams showing side surface configuration examples of the polishing head 32 and the jig 21. As shown in FIG. 4, a protrusion 21 c having a shape and dimension that fits into the gap 32 a of the polishing head 32 is provided on the side surface of the mounting portion 21 b of the jig 21. A hole (not shown) through which a fixing bolt 37 passes is provided from the outer surface of the polishing head 32 to the inner surface of the gap 32a, and a screw into which the tip of the bolt 37 is screwed into the side surface of the projection 21c. A hole is formed. To attach the jig 21 to the polishing head 32, as shown in FIG. 5, the protrusion 21c of the jig 21 is inserted into the gap 32a of the polishing head 32, and the tip of the fixing bolt 37 is connected to the protrusion. The jig 21 is securely fixed to the polishing head 32 by screwing into the screw hole on the side surface of 21c.

  FIG. 6 is a diagram illustrating a planar configuration of the side surface polishing mechanism 30 and the adjustment mechanism 20 including the polishing head 32. As shown in the figure, the polishing head 32 is provided at the tip of a rod-like support portion 33, and the rear end of the support portion 33 is attached to the side polishing mechanism 30 so as to be movable in the horizontal direction by engaging a guide rail (not shown). The air cylinder 35 can be moved forward and backward in the direction of arrow D.

  7 and 8 are diagrams showing other side surface configuration examples of the polishing head 32 and the jig 21. FIG. As shown in the drawing, a through hole of the fixing bolt 37 is provided above the gap 32 a of the polishing head 32, and the protrusion 21 c of the jig 21 is fitted and inserted into the gap 32 a of the polishing head 32. The jig 21 is mounted on the polishing head 32 by screwing the tip portion into a screw hole provided in the mounting portion 21b above the protruding portion 21c. In this way, the position where the tip of the fixing bolt 37 is screwed may be a portion of the mounting portion 21b other than the protruding portion 21c.

  FIG. 9 is a diagram illustrating another side configuration example of a mounting portion for mounting the jig 21 to the polishing head 32. As shown in the figure, the gap 32a of the polishing head 32 is formed in a side surface T shape, and the mounting portion 21b of the jig 21 is a side surface T-shaped projection portion 21c having a shape and dimension to be inserted into the T shape gap 32a. Is forming. The protrusion 21 c formed on the attachment portion 21 b of the jig 21 is fitted into the gap 32 a of the polishing head 32 from the side, and the jig 21 is attached to the polishing head 32.

  FIG. 10 is a plan view showing another configuration example of a mounting portion for mounting the jig 21 to the polishing head 32. As shown in the figure, a planar T-shaped recess 32b is formed in a T-shape in the polishing head 32, and a planar T-shape having a shape and dimension that is fitted into the mounting portion 21b of the jig 21 in the T-shaped recess 32b. 21d is formed. The protrusion 21 d formed on the attachment portion 21 b of the jig 21 is fitted into the recess 32 b of the polishing head 32 from above, and the jig 21 is attached to the polishing head 32.

  FIG. 11 is a diagram showing a method of adjusting the angle of the polishing head 32 by moving the substrate holding table 11 of the substrate holding rotary table 10 up and down. As shown in the figure, a ball screw groove 12b is formed on the outer peripheral surface of the support shaft 12 of the substrate holding rotary table 10, screwed into the ball screw groove 12b, and attached to a stationary portion (not shown) so as to be rotatable without changing its height. A ball nut 28 is provided, and a gear 16 that meshes with a gear groove 28 a formed on the outer periphery of the vault nut 28 is provided. By rotating the gear forward and backward by a motor 18, the support shaft 12 is moved up and down, and the substrate holding table 11 is moved. It is designed to move up and down.

The motor 18 is attached to the stationary portion so as to be movable in the horizontal direction so that the gear 16 can be engaged with and separated from the gear groove 28 a of the ball nut 28. A driving mechanism (not shown) is provided at the lower end of the support shaft 12 to control the rotation of the support shaft 12 so that the support shaft 12 can be moved up and down. To adjust the angle of the polishing head 32, first, the fixing of the polishing head 32 around the fulcrum 31 is released, the gear 16 is engaged with the gear groove 28a, and the rotation of the support shaft 12 is stopped by the drive mechanism that rotates the substrate holding table 11. In this state, while the support shaft 12 is raised or lowered by the motor 18, the angle adjustment is performed at the same time as described in the paragraph No. 0026.

  The height (feed amount of the support shaft 12) of the substrate holding table 11 when adjusted to a predetermined angle, that is, the bevel polishing position of the semiconductor wafer W is stored as the total number of rotations and pulses of the motor 18 at that time. deep. Here, the ball screw groove 12b, the ball nut 28, the gear 16 and the motor 18 constitute a substrate holding table vertical movement mechanism. The height of the substrate holding table 11 is adjusted by rotating the gear 16 forward and reverse by the motor 18, and the angle of the polishing head 32 is adjusted. Here, by using a pulse motor as the motor 18, the minute movement of the substrate holding table 11 can be adjusted, the maintainability is improved, and the angle adjustment time of the polishing head 32 is greatly shortened. can do.

  In order to rotate the semiconductor wafer W at the bevel polishing position of the semiconductor wafer W to polish the bevel portion B (see FIG. 1), the gear 16 and the gear groove 28a of the ball nut 28 are separated from each other, and the drive mechanism The support shaft 12 and the ball nut 28 are rotated integrally with each other, or the support shaft 12 and the ball nut 28 are rotated synchronously while the gear 16 and the gear groove 28a are engaged. Control the number of revolutions.

  FIG. 12 is a diagram showing a method of adjusting the angle of the polishing head 32 by moving the substrate holding table 11 of the substrate holding rotary table 10 up and down. As shown in the figure, FIG. 12 differs from FIG. 11 in that the substrate holding table vertical movement mechanism is composed of a cylinder 19 that moves the support shaft 12 of the substrate holding rotary table 10 up and down. The point is that the angle of the polishing head 32 is adjusted by adjusting the height of the table 11.

In FIG. 12, S <b> 1 and S <b> 2 are stoppers that regulate and adjust the positions of the upper and lower limits of the substrate holding table 11, and 11 a is an engagement protrusion attached to the substrate holding table 11. The method of adjusting the angle of the polishing head 32 is substantially the same as in the example of FIG. 11, but the height of one of the stoppers S 1 and S 2 is adjusted, and the support shaft 12 is raised or lowered by the cylinder 19. , The angle of the polishing head 32 is adjusted, and the adjusted stopper, that is, the bevel polishing position of the semiconductor wafer W is fixed. When polishing the bevel portion B, the substrate holding table 11 is rotated by a drive mechanism (not shown) at this bevel polishing position.

  In the example of the substrate processing apparatus shown in FIGS. 11 and 12, the angle of the polishing head 32 is adjusted manually by visually observing the indication value of the dial gauge, but instead of the dial gauges 22 and 23. The substrate surface position detection that can detect the contact amount of each of the contact rods 24 and 25 (the dimension until the tips of the contact rods 24 and 25 come into contact with the upper surface of the semiconductor wafer W) and output it to a polishing head position adjustment control unit (not shown). Or pressure detecting means for detecting and outputting the pressure applied to the contact rods 24 and 25 of the dial gauges 22 and 23 in the same manner (or replacing the dial gauges 22 and 23). The height of the substrate holding table 11 may be automatically adjusted by the position adjustment control unit so that the difference becomes a target value (zero or a predetermined value). In such a configuration, when the semiconductor wafer W is continuously processed by the substrate processing apparatus, the thickness (about 1 mm) of the semiconductor wafer W is frequently polished, for example, when the thickness is different by several tens of μm in units of one piece or in units of one rod. Also suitable when head angle adjustment is required.

  Further, when the semiconductor wafer W is continuously processed by the substrate processing apparatus, the thickness of the semiconductor wafer W to be polished, which is all or arbitrarily extracted and is actually polished, is measured in advance, and the measured value and the reference thickness of the reference wafer are calculated. The difference h is obtained and stored, and similarly to the polishing position obtained in the paragraph numbers 0033 to 0034, a reference polishing position in which the angle of the polishing head 32 is adjusted in advance is obtained for the reference wafer, and the substrate polishing position is used to calculate the difference h. The height of the substrate holding table 11 is automatically adjusted immediately before polishing the bevel portion of the semiconductor wafer W to be polished so as to correct the polishing position when the bevel portion of the semiconductor wafer W to be polished is actually polished. You may do it.

  For example, when the center of the reference thickness of the reference wafer and the center of the polishing head in the thickness direction are matched, the height of the substrate holding table 11 is corrected by h / 2 from the reference polishing position. In this way, even when the angle of the polishing head needs to be frequently adjusted, the jig is not adjusted every time the bevel portion of the semiconductor wafer W to be polished is actually polished, so that the throughput of the continuous polishing process is remarkably improved. In addition, the polishing performance in each polishing process can be made uniform.

  In the example of the substrate processing apparatus shown in FIGS. 11 and 12, the angle of the polishing head 32 is adjusted by using the lifting and lowering of the support shaft 12. The angle of the polishing head 32 may be adjusted by moving the mechanism 30 up and down. Thus, even when a plurality of side polishing mechanisms 30 are provided around the substrate holding table 11, the angle adjustment of each polishing head 32 by each side polishing mechanism 30 can be arbitrarily and precisely performed. The polishing performance of the bevel portion B of the semiconductor wafer W by the side polishing mechanism 30 can be uniformly or arbitrarily controlled.

  FIG. 13 is a view for carrying out another polishing head position adjusting method for a substrate processing apparatus according to the present invention. As shown in the drawing, a jig 27 having a disc-shaped thickness is sucked and held on the upper surface of the substrate holding table 11 of the substrate holding rotary table 10. By inserting the gap 32a of the polishing head 32 into the edge of the jig 27 and rotating the substrate holding table 11 in the direction indicated by the arrow B, the angle of the polishing head 32, the polishing head 32 is inclined by a predetermined amount in the arrow G, The mounting angle is automatically adjusted. As a result, the mounting angle of the polishing head 32 can be adjusted to 0.1 deg. A semiconductor wafer when the center of the jig 27 and the center of the substrate holding table 11 are aligned with the lower surface of the jig 27 and the center of the polishing head 32 in the thickness direction and the semiconductor wafer W are held on the substrate holding table 11. A cutout 27a is provided to match the center of W in the thickness direction. By inserting the substrate holding table 11 into the notch 27a, the center of the jig 27 and the center of the substrate holding table 11 coincide with each other, and at the same time, the center of the polishing head 32 in the thickness direction and the semiconductor wafer held on the substrate holding table 11 The centers in the thickness direction of W coincide.

  In the above example, the jig 27 has a disk shape, and its edge is fitted into the gap 32a of the polishing head 32. However, the jig 27 is not limited to the disk shape, and the edge is ground. There may be a portion that fits into the gap 32 a of the head 32.

  FIG. 14 is a diagram illustrating a configuration example of the substrate holding rotary table 10. The substrate holding rotary table 10 includes a substrate holding table 11 having a vacuum suction groove for vacuum sucking the semiconductor wafer W and a support shaft 12 for supporting the substrate holding table 11. The lower end of the support shaft 12 is connected to a motor 13 so that the substrate holding table 11 rotates in a substantially horizontal plane. On the upper surface of the substrate holding table 11, a plurality of concentric grooves 11a are formed, and vertical and horizontal grooves 11b extending across the plurality of concentric grooves 11a are formed. The concentric groove 11 a communicates with a communication path 11 c formed in the substrate holding rotary table 10, and the communication path 11 c communicates with a communication path 12 a formed in the support shaft 12. The communication passage 12a is connected to a vacuum pump 14.

  A backing film 15 made of a resin material is attached to the upper surface of the substrate holding table 11 so as to cover the concentric grooves 11a and the vertical and horizontal grooves 11b of the substrate holding table 11. The backing film 15 is formed with a large number of small-diameter through holes (not shown) so as to communicate with the concentric grooves 11a and the vertical and horizontal grooves 11b of the substrate holding table 11. Therefore, by operating the vacuum pump 14, the through hole of the backing film 15 is vacuumed via the communication path 12a of the support shaft 12, the communication path 11c of the substrate holding table 11, the concentric grooves 11a, and the vertical and horizontal grooves 11b. Thus, the semiconductor wafer W is vacuum-sucked on the upper surface of the backing film 15.

  FIG. 15 is a diagram showing an example of the overall configuration of the side polishing mechanism, FIG. 16 is an enlarged view of the polishing head 32, FIG. 15 (a) is a cross-sectional view, and FIG. The side surface polishing mechanism 30 presses the polishing tape 36 against the bevel portion of the semiconductor wafer W to polish the bevel portion of the semiconductor wafer W, and constitutes a bevel portion polishing portion. As shown in the figure, the polishing head 32 presses the polishing head 32 against the bevel portion of the semiconductor wafer W held on the upper surface of the substrate holding table 11 of the substrate holding rotary table 10 to polish the bevel portion. The polishing head 32 includes a support portion 33 having two projecting portions 33a and 33b, and an elastic member 34 made of elastic rubber or the like stretched between the end portions of the projecting portions 33a and 33b.

  The polishing head 32 can be moved in the radial direction of the semiconductor wafer W by a moving mechanism (not shown). An air cylinder 35 is connected to the base portion 33 c of the support portion 33 of the polishing head 32. When the support portion 33 moves toward the center of the semiconductor wafer W by driving the air cylinder 35, the polishing tape 36 is pressed against the bevel portion of the semiconductor wafer W by the elastic member 34. At this time, since the semiconductor wafer W vacuum-sucked on the substrate holding table 11 of the substrate holding rotary table 10 rotated by the motor 13 is rotating at a predetermined speed, the bevel portion of the semiconductor wafer W and the polishing tape 36 which has stopped feeding are stopped. Slidably contact with each other to polish the bevel portion of the semiconductor wafer W. At this time, the chemical solution is supplied from the chemical solution supply nozzle 17 to the edge portion of the semiconductor wafer W. The polishing tape 36 is accommodated in a cassette tape cartridge (not shown), and is wound in a state where a predetermined tension is applied by the take-up reel RA and the feed reel RB in the cassette cartridge.

  In the side polishing mechanism 30 configured as described above, when the support portion 33 of the polishing head 32 moves in the center direction of the semiconductor wafer W by driving the air cylinder 35, the polishing tape 36 is moved to an elastic member as shown in FIG. 34 is pressed against the bevel portion of the semiconductor wafer W. By pressing the elastic member 34 from the back side of the polishing tape 36, a tension T is generated in the stretched elastic member 34. The pressure P acts on the bevel portion of the semiconductor wafer W from the polishing tape 36 by the tension T of the elastic member. The magnitude of this pressure P is L, where the width of the polishing tape is L, the radius of curvature of the bevel section is ρ, and the distance E at which the semiconductor wafer W pushes the polishing tape 36 is sufficiently smaller than the radius of curvature ρ. P = T / (ρL). The elastic member 34 and the polishing tape 36 mounted in the concave gap 32a (fitting portion) of the polishing head 32 constitute a polishing portion (polishing tool) for polishing the bevel portion of the semiconductor wafer W.

  At this time, the semiconductor wafer W is vacuum-sucked to the substrate holding table 11 of the substrate holding rotary table 10, and the substrate holding rotary table 10 is rotated at a predetermined speed by the motor 13. The polishing tape 36 that has stopped is slidably contacted to polish the bevel portion of the semiconductor wafer W. At this time, the pressure for pressing the polishing tape 36 against the bevel portion can be adjusted by appropriately adjusting the pressure of the compressed air supplied to the air cylinder 35. For example, the polishing tape 36 is pressed against the bevel portion with a pressure of about 98 kPa. To do. At this time, as shown in FIG. 15, the chemical solution or pure water is supplied from the chemical solution supply nozzle 17 to the contact portion between the bevel portion of the semiconductor wafer W and the polishing tape 36, and the bevel portion of the semiconductor wafer W is wet-polished. . The worn polishing tape 36 is wound up before the polishing rate decreases, and a new portion of the polishing tape 36 comes into contact with the bevel portion of the semiconductor wafer W.

  One or a plurality of side surface polishing mechanisms 30 including the polishing head 32 are arranged around the substrate holding rotary table 10, and a jig 21 as shown in FIG. And adjust to 0.1 deg. As a result, the angle θ of the polishing tape 36 with respect to the semiconductor wafer surface changes, and the range in contact with the semiconductor wafer W can be arbitrarily adjusted. That is, the polishing ranges of the individual polishing heads 32 can be arbitrarily set, or can be adjusted so that the polishing ranges of all the polishing heads 32 are uniform. Further, by adjusting using the jig 27 as shown in FIG. 13, the mounting angles of the plurality of polishing heads 32 become uniform, and the range in which the polishing tape 36 contacts the semiconductor wafer W also becomes uniform. In the prior art, even if there are a plurality of bevel polishing mechanisms, each has a different polishing direction, so that there is a drawback that the polishing rate and the polishing range vary greatly. In the present embodiment, the polishing range is limited and the polishing time is shortened by adjusting the mounting angle of the polishing head 32 using the jig 21 and the jig 27 as described above.

  FIG. 17 is a side view showing a configuration example of a polishing end point detection unit that detects an end point when the edge portion of the semiconductor wafer W is polished by the polishing head 32. As shown in the figure, the polishing end point detection unit 50 captures and polishes a ring illumination 52 disposed between an image sensor 51 composed of a CCD camera and a semiconductor wafer W as an inspection object, and an image obtained by the image sensor 51. And a control unit 53 that diagnoses whether or not the end point has been reached.

  In the polishing end point detection unit 50, while the bevel portion of the semiconductor wafer W is being polished by the polishing head 32, the edge portion of the semiconductor wafer W is illuminated by the ring illumination 52, and the bevel portion of the semiconductor wafer W is imaged by the image sensor 51. . Then, the image obtained by the image sensor 51 is taken into the control unit 53, the film color change of the beveled portion of the semiconductor wafer W is observed by the control unit 53, and the polishing end point is detected by this film color change. When the control unit 53 detects the polishing end point, the control unit 53 sends a signal for pulling the polishing head 32 to the air cylinder 35, separates the polishing head 32 from the bevel portion of the semiconductor wafer W, finishes polishing, and also holds the substrate holding table. 11 stops rotating.

  FIG. 18 is a side view showing another configuration example of the polishing end point detection unit that detects the end point when the edge portion of the semiconductor wafer W is polished by the polishing head 32. As shown in the figure, the polishing end point detector 60 amplifies the detection signal of the drive current of the motor 13 that rotates the substrate holding table 11, and the detection signal amplified by the motor amplifier 61, and receives the polishing end point. The control part 62 which judges whether it reached | attained is provided. The control unit 62 detects a torque value necessary for the rotation of the motor 13 from the detection signal of the drive current from the motor amplifier 61, analyzes the change of the torque value, and detects the polishing end point. When the polishing end point is detected, the control unit sends a signal for pulling the polishing head 32 to the air cylinder 35, moves the polishing head 32 away from the bevel portion of the semiconductor wafer W, and ends the polishing.

  FIG. 19 is a side view showing another configuration example of the polishing end point detection unit that detects the end point when the edge portion of the semiconductor wafer W is polished by the polishing head 32. As shown in the figure, the polishing end point detection unit 70 includes a photosensor 71 including a light projecting unit 71a and a light receiving unit 71b, a measuring instrument amplifier 72 that measures light received by the light receiving unit 71b and amplifies the measured signal. A control unit 73 is provided for taking in the signal amplified by the measuring instrument amplifier 72 and determining whether or not the polishing end point has been reached. The control unit 73 sends a signal for pulling the polishing head 32 to the air cylinder 35 that detects the polishing end point based on a signal from the measuring instrument amplifier 72, separates the polishing head 32 from the bevel portion of the semiconductor wafer W, and ends the polishing.

  By adjusting the mounting angle of the polishing head 32 using the adjusting mechanism 20 having the jigs 21 and 27 shown in FIGS. 3 and 13, the mounting angle of the polishing head 32 can be adjusted with high accuracy. 19, when the polishing end point is detected by the polishing end point detection units 50, 60, 70 configured as shown in FIG. 19, the time from the polishing start to the polishing end point for each semiconductor wafer W becomes substantially constant, and the polishing end point is managed by time. It is also possible to do. In addition, by using the jig 21, when there are a plurality of polishing heads 32, the mounting angle can be arbitrarily adjusted, so that the polishing range of each polishing head 32 can also be arbitrarily adjusted.

  Although the embodiments of the present invention have been described above, the present invention is not limited to the above-described embodiments, and various modifications can be made within the scope of the technical idea described in the claims and the specification and drawings. Is possible. For example, in the above embodiment, the dial gauge 22 installed at a predetermined interval on the linear portion 21 of the jig 21 to detect the position of the upper surface of the semiconductor wafer W (or a dummy wafer having the same thickness as the semiconductor wafer), However, any substrate position detecting means using laser light may be used as long as it is a substrate position detecting means capable of detecting the position of the upper surface of the semiconductor wafer W (or a dummy wafer having the same thickness as the semiconductor wafer). For example, in the above example, the polishing head for polishing the bevel portion of the semiconductor wafer W has been described as an example. However, the polishing head position adjusting method of the substrate processing apparatus according to the present invention is limited to polishing the bevel portion of the semiconductor wafer. However, the present invention can be applied to polishing of an edge portion, a notch portion or an orientation flat portion of a semiconductor wafer. Further, the configuration of the polishing head for polishing the bevel portion is not limited to the above configuration.

It is a figure which shows the bevel part and edge part of a semiconductor wafer. FIG. 2A and FIG. 2B are diagrams showing a deep trench formation process of the trench capacitor. It is a figure for enforcing the polishing head position adjustment method of the substrate processing apparatus concerning the present invention. It is a figure which shows the side surface structure of the grinding | polishing head and jig | tool of a substrate processing apparatus which concerns on this invention. It is a figure which shows the side surface structure of the grinding | polishing head and jig | tool of a substrate processing apparatus which concerns on this invention. It is a figure which shows the plane structure of the side surface grinding | polishing mechanism and adjustment mechanism of the substrate processing apparatus which concern on this invention. It is a figure which shows the side surface structure of the grinding | polishing head and jig | tool of a substrate processing apparatus which concerns on this invention. It is a figure which shows the side surface structure of the grinding | polishing head and jig | tool of a substrate processing apparatus which concerns on this invention. It is a figure which shows the side surface structure of the mounting part of the grinding | polishing head and jig | tool of the substrate processing apparatus which concerns on this invention. It is a figure which shows the planar structure of the mounting part of the grinding | polishing head and jig | tool of the substrate processing apparatus which concerns on this invention. It is a figure for enforcing the polishing head position adjustment method of the substrate processing apparatus concerning the present invention. It is a figure for enforcing the polishing head position adjustment method of the substrate processing apparatus concerning the present invention. It is a figure for enforcing the polishing head position adjustment method of the substrate processing apparatus concerning the present invention. It is a figure which shows the structural example of a board | substrate holding | maintenance rotation table. It is a figure which shows the example of whole structure of a side surface grinding | polishing mechanism. FIG. 16A is an enlarged view of a polishing head, FIG. 16A is a cross-sectional view, and FIG. 2 is a diagram illustrating a configuration example of a polishing end point detection unit at an edge portion of a semiconductor wafer W. FIG. 2 is a diagram illustrating a configuration example of a polishing end point detection unit at an edge portion of a semiconductor wafer W. FIG. 2 is a diagram illustrating a configuration example of a polishing end point detection unit at an edge portion of a semiconductor wafer W. FIG.

Explanation of symbols

DESCRIPTION OF SYMBOLS 10 Substrate holding rotary table 11 Substrate holding table 12 Support shaft 13 Motor 14 Vacuum pump 15 Backing film 16 Gear 17 Chemical supply nozzle 18 Motor 19 Cylinder 20 Adjustment mechanism 21 Jig 22 Dial gauge 23 Dial gauge 24 Contact rod 25 Contact rod 27 Tool 28 Ball nut 30 Side polishing mechanism 31 Support point 32 Polishing head 33 Support part 34 Elastic member 35 Air cylinder 36 Polishing tape 50 Polishing end point detecting part 51 Image sensor 52 Ring illumination 53 Control part 60 Polishing end point detecting part 61 Motor amplifier 62 Control Unit 70 Polishing end point detection unit 71 Photo sensor 72 Measuring instrument amplifier

Claims (7)

Position of the polishing head of a substrate processing apparatus comprising a substrate holding rotary table that holds and rotates a substrate, and a side polishing mechanism that includes a polishing head that polishes at least a bevel portion of the substrate held on the substrate holding rotary table. A polishing head position adjusting method of a substrate processing apparatus for adjusting
Using a jig to adjust the position of the polishing head for polishing the bevel ,
The jig includes a linear portion extending in a radial direction above the substrate and passing through the center of the substrate, and a plurality of substrate surface detection means for detecting positions of the substrate surface attached to the linear portion at a predetermined interval, or Comprising a plurality of pressure detection means for detecting the pressure acting on the substrate surface;
The positioning of the polishing head, so that said pressure differential dimensional difference to the substrate surface is detected by a zero or a predetermined value or the plurality of pressure detection means is zero or a predetermined value of said plurality of substrate surface detecting means The method of adjusting the position of the polishing head of the substrate processing apparatus is characterized by adjusting the angle of attachment of the polishing head to the side polishing mechanism . Position of the polishing head of a substrate processing apparatus comprising a substrate holding rotary table that holds and rotates a substrate, and a side polishing mechanism that includes a polishing head that polishes at least a bevel portion of the substrate held on the substrate holding rotary table. A polishing head position adjusting method of a substrate processing apparatus for adjusting
Using a jig to adjust the position of the polishing head for polishing the bevel ,
When the edge of the jig engages with the polishing head and is held by the substrate holding rotary table, the center in the thickness direction on the side facing the substrate bevel of the polishing head holds the substrate. Comprising a plate-like member having a thickness coinciding with the center in the thickness direction of the substrate held by a rotary table;
The substrate is characterized in that the position adjustment of the polishing head is performed by adjusting the angle of attachment of the polishing head to the side polishing mechanism by rotating the edge of the plate-like member engaged with the polishing head. A method for adjusting the position of a polishing head of a processing apparatus. Position of the polishing head of a substrate processing apparatus comprising a substrate holding rotary table that holds and rotates a substrate, and a side polishing mechanism that includes a polishing head that polishes at least a bevel portion of the substrate held on the substrate holding rotary table. A polishing head position adjusting method of a substrate processing apparatus for adjusting
A step of preparing a jig for adjusting the position of the polishing head when polishing the bevel portion, a step of holding the jig by the substrate holding rotary table and the polishing head, Measuring the amount of contact or pressure by a plurality of substrate surface detection means for detecting the position of the substrate surface attached to the jig at predetermined intervals or a plurality of pressure detection means for detecting pressure acting on the substrate surface ; And adjusting the position of the polishing head by adjusting the mounting angle of the polishing head to the side polishing mechanism so that the measured contact amount difference or pressure difference becomes zero or a predetermined value. For adjusting the position of a polishing head of a substrate processing apparatus. In the polishing head position adjustment method of the substrate processing apparatus according to claim 3 ,
The method for adjusting the position of the polishing head of the substrate processing apparatus, wherein the step of adjusting the position of the polishing head includes a step of raising and lowering the substrate holding rotary table. A position of the polishing head of a substrate processing apparatus comprising a substrate holding rotary table that holds and rotates a substrate, and a polishing mechanism that includes a polishing head that polishes at least a bevel portion of the substrate held on the substrate holding rotary table. A method for adjusting a polishing head position of a substrate processing apparatus to be adjusted,
A step of preparing a jig for adjusting the position of the polishing head when polishing the bevel portion, a step of holding the jig by the substrate holding rotary table and the polishing head, and the substrate holding rotation A method for adjusting a position of a polishing head of a substrate processing apparatus, comprising: adjusting a mounting angle of a polishing head to the side surface polishing mechanism by rotating a table to adjust a position of the polishing head. Position of the polishing head of a substrate processing apparatus comprising a substrate holding rotary table that holds and rotates a substrate, and a side polishing mechanism that includes a polishing head that polishes at least a bevel portion of the substrate held on the substrate holding rotary table. A polishing head position adjusting jig for adjusting
The jig includes a linear portion extending in the radial direction above the substrate and passing through the center of the substrate, and a plurality of substrate surface detecting means for detecting positions of the substrate surface attached to the linear portion at a predetermined interval. Alternatively, a polishing head position adjusting jig comprising a plurality of dial gauges for detecting pressure acting on the substrate surface and mounted on the polishing head. Position of the polishing head of a substrate processing apparatus comprising a substrate holding rotary table that holds and rotates a substrate, and a side polishing mechanism that includes a polishing head that polishes at least a bevel portion of the substrate held on the substrate holding rotary table. A polishing head position adjusting jig for adjusting
When the edge of the jig engages with the polishing head and is held by the substrate holding rotary table, the center in the thickness direction on the side facing the substrate bevel of the polishing head is the substrate holding rotation. A polishing head position adjusting jig comprising a plate-like member having a thickness that coincides with a center of the substrate held in a thickness direction, and being engaged with and rotated by the polishing head.

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