JP4295289B2 - Reference power supply voltage circuit - Google Patents

Reference power supply voltage circuit Download PDF

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JP4295289B2
JP4295289B2 JP2006092988A JP2006092988A JP4295289B2 JP 4295289 B2 JP4295289 B2 JP 4295289B2 JP 2006092988 A JP2006092988 A JP 2006092988A JP 2006092988 A JP2006092988 A JP 2006092988A JP 4295289 B2 JP4295289 B2 JP 4295289B2
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voltage
circuit
reference
terminal
power supply
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JP2007265336A (en
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佳明 八谷
崇 國松
穣 福井
竜太郎 荒川
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パナソニック株式会社
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    • GPHYSICS
    • G05CONTROLLING; REGULATING
    • G05FSYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F3/00Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
    • G05F3/02Regulating voltage or current
    • G05F3/08Regulating voltage or current wherein the variable is dc
    • G05F3/10Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics
    • G05F3/16Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices
    • G05F3/20Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
    • G05F3/24Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only

Description

  The present invention relates to a reference power supply voltage circuit, and more particularly to a reference power supply voltage circuit using two or more reference power supply voltages.

  A conventional switching power supply semiconductor device is disclosed that reduces power consumption and improves power supply efficiency by reducing switching loss at light load with a simple configuration. The switching power supply semiconductor device control circuit compares an error amplifier that generates an error voltage signal that is a difference between the auxiliary power supply voltage and a reference voltage, and an element current detection signal detected by the current detection circuit and the error voltage signal. And a device current detection comparator. Further, when the error voltage signal is smaller than the lower limit voltage value, the control circuit stops outputting the switching signal to the switching element to the switching signal control circuit, and the error voltage signal is larger than the upper limit voltage value. In addition, a light load detection circuit that starts outputting a switching signal to the switching signal control circuit is provided.

JP 2001-224169A.

  However, in the conventional switching power supply semiconductor device, when a high power supply voltage (for example, 15 V or more) is required, a plurality of high-breakdown-voltage circuit elements are required, which increases the circuit scale and is disadvantageous for miniaturization. There was a problem of becoming. To solve this problem, a circuit with a high withstand voltage required by dividing the circuit configuration into a circuit that operates with a first reference power supply voltage and a circuit that operates with a second reference power supply voltage that is lower than the first reference power supply voltage. A method of reducing the number of elements is conceivable. However, in this case, the difference between the threshold voltages of the circuit elements of both internal circuits becomes large, which may cause malfunction of the entire circuit.

  The object of the present invention is to solve the above problems, and in a reference power supply voltage circuit having two or more reference power supply voltages, a reference power supply voltage circuit that is safe and suitable for downsizing even when a high reference power supply voltage is used. Is to provide.

According to a first aspect of the present invention, there is provided a reference power supply voltage circuit comprising: a detecting means for detecting a first reference voltage of a first reference voltage source; the first reference voltage detected by the detecting means; and a predetermined reference detection. A comparator that outputs a signal for controlling an operation state and a stop state of an operation circuit using a second reference voltage of a second reference voltage source that is equal to or lower than the first reference voltage as a power supply voltage by comparing the voltage with the voltage When the first reference voltage is lower than the first predetermined voltage, the second reference voltage is maintained at the circuit reference potential, the first reference voltage is equal to or higher than the first predetermined voltage and the second When the voltage falls below a predetermined voltage, the second reference voltage is set equal to the first reference voltage. When the first reference voltage is equal to or higher than the second predetermined voltage, the second reference voltage is set. Is set to a voltage proportional to the first reference voltage. And unfixed period lockout circuit before the operation of, and further comprising a.

  A reference power supply voltage circuit according to a second aspect of the invention is the reference power supply voltage circuit according to the first aspect of the invention, wherein the first predetermined voltage is a stable operation of an operation circuit using the second reference voltage as a power supply voltage. The second predetermined voltage is equal to or higher than a voltage at which an operation circuit using the first reference voltage as a power supply voltage can stably operate.

Reference supply voltage circuit according to a third aspect of the present invention is the reference power supply voltage circuit according to the first or second invention, the operation before unfixed period malfunction prevention circuit, a cathode terminal is connected to the circuit reference potential, said first A diode section for applying a forward voltage, which is a predetermined voltage of 2, a first resistor connected between the first reference voltage source and an anode terminal of the diode, and one terminal being the first reference connected to a voltage source and the other terminal is connected to the circuit reference potential via a second resistor, a first switch element control terminal connected to the anode terminal of the diode portion, the one terminal the A second reference terminal connected to the first reference voltage source , the other terminal connected to the second reference voltage source , and a control terminal connected to a connection point between the second resistor and the first switch element; Switch element Characterized in that was.

  According to a fourth aspect of the present invention, there is provided the reference power supply voltage circuit according to the third aspect, wherein the diode section includes a plurality of diodes connected in series.

A reference power supply voltage circuit according to a fifth aspect of the present invention is the reference power supply voltage circuit according to the third aspect of the invention, wherein the diode section includes a plurality of bipolar transistors connected in series.

  A reference power supply voltage circuit according to a sixth invention is the reference power supply voltage circuit according to the third invention, wherein the first and second switch elements are P-type transistors.

  According to the reference power supply voltage circuit according to the present invention, in the reference power supply voltage circuit having two or more reference power supply voltages, there is provided a reference power supply voltage circuit that is safe and suitable for downsizing even when a high reference power supply voltage is used. realizable.

  Hereinafter, embodiments according to the present invention will be described with reference to the drawings. In addition, in each following embodiment, the same code | symbol is attached | subjected about the same component.

Embodiment 1
FIG. 1 is a circuit diagram showing a configuration of a semiconductor device provided with a reference power supply voltage circuit 3 according to Embodiment 1 of the present invention. The semiconductor device shown in FIG. 1 includes a power supply 1, a VCC power supply circuit 2, a reference power supply voltage circuit 3, a circuit reference block 4, a first operation circuit 5, a second operation circuit 6, and a capacitor 15. The reference power supply voltage circuit 3 includes a pre-operation indefinite period malfunction prevention circuit 7, a VDD power supply circuit 8, a VCC detection circuit 9, a comparator 10, a VCC terminal 11, a VDD terminal 12, a V2 terminal 13, and a VBG terminal 14.

  The anode side of the power source 1 is connected to the VCC power supply circuit 2 and the cathode side is connected to the ground potential. One terminal of the capacitor 15 is connected to the VCC power supply circuit 2, the first operation circuit 5, and the VCC terminal 11 of the reference power supply voltage circuit 3, and the other terminal is connected to the ground potential. The VCC power supply circuit 2 is connected to the anode side of the power supply 1, one terminal of the capacitor 15, the first operation circuit 5, the second operation circuit 6, and the VCC terminal 11 of the reference power supply voltage circuit 3. The first operation circuit 5 is connected to the VCC power supply circuit 2, one terminal of the capacitor 15, the second operation circuit 6, and the VCC terminal 11 of the reference power supply voltage circuit 3. The second operation circuit 6 is connected to the VDD terminal 12 of the reference power supply voltage circuit 3, the V2 terminal 13 of the reference power supply voltage circuit 3, the circuit reference block 4, the VCC power supply circuit 2, and the first operation circuit 5. Yes. The circuit reference block 4 is connected to the VDD terminal 12 of the reference power supply voltage circuit 3, the VBG terminal 14 of the reference power supply voltage circuit 3, and the second operation circuit 6.

  The VDD power supply circuit 8 is connected to the VCC terminal 11, the VDD terminal 12, and a malfunction prevention circuit 7 for an indefinite period before operation. The VCC detection circuit 9 is connected to the VCC terminal 11 and the inverting input terminal of the comparator 10. The pre-operation indefinite period malfunction prevention circuit 7 is connected to the VCC terminal 11, the VDD terminal 12, and the VDD power supply circuit 8. The inverting input terminal of the comparator 10 is connected to the VCC detection circuit 9, the non-inverting input terminal is connected to the VBG terminal 14, and the output terminal is connected to the V2 terminal 13. The comparator 10 is connected to the VDD potential and the ground potential as the reference potential of the output signal.

  The VCC power supply circuit 2 receives a power supply voltage from the power supply 1, generates a VCC level voltage, and supplies it to the reference power supply voltage circuit 3 and the first operation circuit 5. The VDD power supply circuit 8 receives the VCC level voltage supplied from the VCC power supply circuit 2 via the VCC terminal 11, generates the VDD level voltage, and generates the VDD reference voltage 4 and the second operation circuit 6. To supply.

  The circuit reference block 4 receives the voltage of the VDD terminal 12, and determines that the second operation circuit 6 cannot operate stably when the voltage of the VDD terminal 12 is lower than the predetermined voltage VDD_0. In order to control the circuit 6 to the stop state, the low level V1 signal is output. When the voltage at the VDD terminal 12 is equal to or higher than the predetermined voltage VDD_0, the circuit reference block 4 determines that the second operation circuit 6 can operate stably and controls the second operation circuit 6 to the operation state. Therefore, a high level V1 signal is output. The circuit reference block 4 generates a detection reference voltage (hereinafter referred to as a VBG voltage) used for comparison by the comparator 10 of the reference power supply voltage circuit 3 and outputs the detection reference voltage to the VBG terminal 14.

  The second operation circuit 6 operates using the voltage at the VDD terminal 12 as a reference voltage. The second operation circuit 6 is controlled to be stopped when the V1 signal from the circuit reference block 4 is at a low level, and is controlled to be operated when the V1 signal is at a high level. Further, the second operation circuit 6 has a low level to control the first operation circuit 5 to a stop state when the V2 signal input from the comparator 10 of the reference power supply voltage circuit 3 via the V2 terminal 13 is at a low level. The V4 signal is output, and when the V1 signal and the V2 signal are both at the high level, the high level V4 signal is output to control the first operation circuit 5 to the operating state. Further, the second operation circuit 6 generates and outputs a V3 signal for controlling the VCC power supply circuit 2 in order to keep the output voltage of the VCC power supply circuit 2 constant. The first operation circuit 5 inputs the voltage of the VCC terminal 11 supplied from the VCC power supply circuit 2 as a reference voltage, and sets the stop state and the operation state according to the V4 signal input from the second operation circuit 6. Can be switched.

  The VCC detection circuit 9 detects the voltage at the VCC terminal 11 and outputs a voltage corresponding to the voltage at the VCC terminal 11 to the comparator 10. The comparator 10 compares the voltage VBG input to the VBG terminal 14 with the voltage corresponding to the voltage at the VCC terminal 11 from the VCC detection circuit 9, and the voltage VBG is higher than the voltage corresponding to the voltage at the VCC terminal 11. In this case, it is determined that the first operation circuit 5 can operate stably, and a high-level V2 signal is output in order to put the first operation circuit 5 into an operation state. The comparator 10 determines that the first operation circuit 5 cannot operate stably when the voltage VBG is equal to or lower than the voltage corresponding to the voltage at the VCC terminal 11, and puts the first operation circuit 5 into a stop state. A low level V2 signal is output. The voltage VBG is set to be equal to the voltage value output from the VCC detection circuit 9 when the voltage at the VCC terminal 11 is VCC_0.

  The pre-operation indefinite period malfunction prevention circuit 7 maintains the voltage at the VDD terminal 12 at zero potential until the input voltage at the VCC terminal 11 reaches a predetermined voltage VCCm. Further, the malfunction prevention circuit 7 before the indefinite period of operation sets the voltage at the VDD terminal 12 equal to the voltage at the VCC terminal 11 when the input voltage at the VCC terminal 11 is equal to or higher than the predetermined voltage VCCm and lower than the voltage VCC_1. When the input voltage of the VCC terminal 11 is equal to or higher than the voltage VCC_1, the voltage of the VDD terminal 12 is set to a voltage proportional to the voltage of the VCC terminal 11.

  Next, the operation of the semiconductor device including the reference power supply voltage circuit 3 according to the present embodiment will be described with reference to FIG. FIG. 2 is a diagram showing the relationship between the voltage at the VCC terminal 11 and the voltage at the VDD terminal 12 when the semiconductor device including the reference power supply voltage circuit 3 configured as shown in FIG. In FIG. 2, a voltage VDD_0 indicates the minimum voltage at the VDD terminal 12 at which the second operation circuit 6 that operates using the voltage at the VDD terminal 12 as a reference voltage can operate stably. That is, when the voltage at the VDD terminal 12 is smaller than the voltage VDD_0, the second operation circuit 6 that operates using the voltage at the VDD terminal 12 as a reference voltage becomes unstable. The voltage VCC_0 indicates the minimum voltage at the VCC terminal 11 at which the first operation circuit 5 that operates using the voltage at the VCC terminal 11 as a reference voltage can operate stably. That is, when the voltage at the VCC terminal 11 is smaller than the voltage VCC_0, the first operation circuit 5 that operates using the voltage at the VCC terminal 11 as a reference voltage becomes unstable.

  First, when the power supply 1 is applied, the capacitor 15 connected to the VCC potential is charged by the VCC power supply circuit 2, and the voltage at the VCC terminal 11 gradually increases. In a state where the voltage at the VCC terminal 11 is lower than the voltage VCCm, the voltage at the VDD terminal 12 is maintained at a zero potential by the malfunction prevention circuit 7 for an indefinite period before operation. When the voltage at the VCC terminal 11 further increases and becomes equal to or higher than the voltage VCCm, the voltage at the VDD terminal 12 is switched from the zero potential to the voltage VDD_1 equal to the voltage at the VCC terminal 11. At this time, the voltage VDD_1 satisfies a relationship of VDD_1> VDD_0. Therefore, the second operation circuit 6 that operates using the voltage at the VDD terminal 12 as a reference voltage can operate stably. The circuit reference block 4 outputs a high-level V1 signal that controls the second operation circuit 6 to an operation state. Until the voltage at the VCC terminal 11 becomes the voltage VCC_1, the voltage at the VDD terminal 12 is equal to the voltage at the VCC terminal 11.

  Next, when the voltage at the VCC terminal 11 further rises to become a voltage VCC_1 higher than the voltage VCC_0, the voltage at the VDD terminal 12 becomes lower than the voltage at the VCC terminal 11 and becomes a voltage VDD_2 proportional to the voltage at the VCC terminal 11 (for example, It is switched so as to follow a function of VDD = VCC / a (a is a number of 1 or more). At this time, the first operation circuit 5 that operates using the voltage at the VCC terminal 11 as a reference voltage can operate stably. The comparator 10 outputs a high-level V2 signal that controls the first operating circuit 5 to the operating state. At this time, since the voltage VDD_2 is set in advance so as to satisfy the relationship of VDD_2> VDD_0, the second operation circuit 6 that operates using the voltage at the VDD terminal 12 as a reference voltage can continue to operate stably. Thereafter, the voltage at the VDD terminal 12 increases in proportion to the voltage at the VCC terminal 11 until the voltage at the VCC terminal 11 further increases and reaches a certain level. When the voltage at the VCC terminal 11 reaches a certain level, the second operation circuit 6 outputs a V3 signal to the VCC power supply circuit 2 and controls the output voltage of the VCC power supply circuit 2 to be constant.

  As described above, according to the reference power supply voltage circuit 3 according to the present embodiment, the voltage at the VDD terminal 12 has been conventionally input at a voltage lower than the voltage VDD_0 at the time of starting or restarting. On the other hand, the voltage VDD_1 higher than the voltage VDD_0 is applied to the second operation circuit 6 when the voltage is constantly maintained at zero potential and on the other hand, a voltage higher than the voltage VDD_0 can be secured. Therefore, the second operation circuit 6 using the voltage at the VDD terminal 12 as a reference voltage can operate stably, and the first operation circuit 5 can be stably controlled, so that malfunction of the entire circuit can be reduced. Further, even when a voltage of the VDD terminal 12 lower than the voltage of the VCC terminal 11 is used, the second operation circuit 6 can be operated in a short time by applying a VDD voltage equal to the voltage of the VCC terminal 11 once. Fast startup.

<< Embodiment 2 >>
FIG. 3 is a circuit diagram showing a configuration of a semiconductor device including a reference power supply voltage circuit 3A according to Embodiment 2 of the present invention. The semiconductor device according to the present embodiment is different from the semiconductor device according to the first embodiment of FIG. 1 in that a reference power supply voltage circuit 3A is provided instead of the reference power supply voltage circuit 3 of FIG. The reference power supply voltage circuit 3A includes a pre-operation indefinite period malfunction prevention circuit 7A, a VDD power supply circuit 8A, a VCC detection circuit 9A, and a comparator 10A. The other points are the same as those of the semiconductor device according to the first embodiment shown in FIG. 1, and the components denoted by the same reference numerals have the same configurations and operations, and therefore, detailed description thereof will not be repeated. .

  In FIG. 3, the pre-operation indefinite period malfunction prevention circuit 7A includes N diodes D1 to DN, resistors 20 and 33, and field effect transistors 21 and 22 connected in series. The resistor 33 and the diodes D1 to DN are connected in series with each other between the VCC potential and the ground potential. The source terminal of the field effect transistor 21 is connected to the VCC potential, the drain terminal is connected to the gate terminal of the resistor 20 and the field effect transistor 22, and the gate terminal is connected to the connection point of the resistor 33 and the diode D1. The source terminal of the field effect transistor 22 is connected to the VCC potential, the drain terminal is connected to the VDD potential, and the gate terminal is connected to the drain terminal of the field effect transistor 21. One terminal of the resistor 20 is connected to the drain terminal of the field effect transistor 21 and the gate terminal of the field effect transistor 22, and the other terminal is connected to the ground potential. The threshold voltage of the field effect transistor 22 is VTH, the forward voltage of each of the diodes D1 to DN is VF, and the voltage generated when all the diodes D1 to DN are conductive is N · VF.

The VDD power supply circuit 8A includes resistors 23 and 24 and a bipolar transistor 25. The resistors 23 and 24 are sequentially connected in series between the VCC potential and the ground potential. The collector terminal of the bipolar transistor 25 is connected to the VCC potential, the emitter terminal is connected to the VDD potential, and the base terminal is connected to the connection point of the resistors 23 and 24. Note that the threshold voltage of the bipolar transistor 25 is VBE.

  The VCC detection circuit 9A includes resistors 26 and 27. The resistors 26 and 27 are connected in series between the VCC potential and the ground potential.

  The comparator 10A includes field effect transistors 28 and 29, bipolar transistors 30 and 31, and a resistor 32. The source terminal of the field effect transistor 28 is connected to the VDD potential, the drain terminal is connected to the collector terminal of the bipolar transistor 30 and the V2 terminal 13, and the gate terminal is connected to the gate terminal of the field effect transistor 29. The source terminal of the field effect transistor 29 is connected to the VDD potential, and the drain terminal and the gate terminal are connected to the collector terminal of the bipolar transistor 31. The collector terminal of the bipolar transistor 30 is connected to the drain terminal of the field effect transistor 28 and the V2 terminal 13, the emitter terminal is connected to the emitter terminal of the bipolar transistor 31 and one terminal of the resistor 32, and the base terminal is VCC detection. It is connected to the connection point of the resistors 26 and 27 of the circuit 9A. The collector terminal of the bipolar transistor 31 is connected to the gate terminal and the drain terminal of the field effect transistor 29, the emitter terminal is connected to the emitter terminal of the bipolar transistor 30 and one terminal of the resistor 32, and the base terminal is connected to the VBG terminal 14. Has been. One terminal of the resistor 32 is connected to the emitter terminals of the bipolar transistors 30 and 31, and the other terminal is connected to the ground potential.

  Next, the operation of the semiconductor device including the reference power supply voltage circuit 3A according to the present embodiment will be described with reference to FIG. FIG. 4 is a diagram showing the relationship between the voltage at the VCC terminal 11 and the voltage at the VDD terminal 12 when the semiconductor device including the reference power supply voltage circuit 3A configured as shown in FIG. In FIG. 4, a voltage VDD_0 indicates the minimum voltage at the VDD terminal 12 at which the second operation circuit 6 that operates using the voltage at the VDD terminal 12 as a reference voltage can operate stably. That is, when the voltage at the VDD terminal 12 is smaller than the voltage VDD_0, the second operation circuit 6 that operates using the voltage at the VDD terminal 12 as a reference voltage becomes unstable. The voltage VCC_0 indicates the minimum voltage at the VCC terminal 11 at which the first operation circuit 5 that operates using the voltage at the VCC terminal 11 as a reference voltage can operate stably. That is, when the voltage at the VCC terminal 11 is smaller than the voltage VCC_0, the first operation circuit 5 that operates using the voltage at the VCC terminal 11 as a reference voltage becomes unstable. Further, the threshold voltage VTH of the field effect transistor 22 of the malfunction preventing circuit 7A before the indefinite period of operation is set in advance so as to satisfy the relationship of VTH> VDD_0.

  First, when the power supply 1 is applied, the capacitor 15 connected to the VCC potential is charged by the VCC power supply circuit 2, and the voltage at the VCC terminal 11 gradually increases. In a state where the voltage at the VCC terminal 11 is lower than the threshold voltage VTH of the transistor 22, the transistor 22 does not operate, so the voltage at the VDD terminal 12 is maintained at the zero potential which is the circuit reference potential. When the voltage at the VCC terminal 11 further rises and becomes equal to or higher than the threshold voltage VTH of the transistor 22, the transistor 22 is turned on, and the voltage at the VDD terminal 12 is switched from zero potential to the voltage VDD_1 equal to the voltage at the VCC terminal 11. At this time, the voltage VDD_1 satisfies a relationship of VDD_1> VDD_0. Therefore, the second operation circuit 6 that operates using the voltage at the VDD terminal 12 as a reference voltage can operate stably. The circuit reference block 4 outputs a high-level V1 signal that controls the second operation circuit 6 to an operation state. Until the voltage at the VCC terminal 11 reaches the voltage N · VF from the voltage VTH, the voltage at the VDD terminal 12 is equal to the voltage at the VCC terminal 11.

Next, when the voltage at the VCC terminal 11 further rises and reaches the voltage N · VF, the N diodes D1 to DN are turned on, and the transistor 21 is turned on. Therefore, the gate terminal voltage of the transistor 21 becomes equal to the voltage of the VCC terminal 11, and the transistor 22 is turned off. As a result, the voltage at the VDD terminal 12 drops to a voltage VDD_2 that is a voltage obtained by subtracting the threshold voltage VBE of the transistor 25 from the voltage divided by the resistors 23 and 24 of the VDD power supply circuit 8. At this time, the first operation circuit 5 that operates using the voltage at the VCC terminal 11 as a reference voltage can operate stably. The comparator 10A outputs a high-level V2 signal that controls the first operating circuit 5 to the operating state. At this time, since the voltage VDD_2 is set in advance so as to satisfy the relationship of VDD_2> VDD_0, the second operation circuit 6 that operates using the voltage at the VDD terminal 12 as a reference voltage can continue to operate stably. Thereafter, the voltage at the VDD terminal 12 increases in proportion to the voltage at the VCC terminal 11 until the voltage at the VCC terminal 11 further increases and reaches a certain level. When the voltage at the VCC terminal 11 reaches a certain level, the second operation circuit 6 outputs a V3 signal to the VCC power supply circuit 2 and controls the output voltage of the VCC power supply circuit 2 to be constant.

  As described above, according to the reference power supply voltage circuit 3A according to the present embodiment, the reference power supply voltage circuit that exhibits the same effect as that of the first embodiment can be easily realized by the above circuit configuration. Further, the voltage N · VF used for switching the voltage of the VDD terminal 12 can be easily adjusted to other numerical values by adjusting the number of the diodes D1 to DN.

<< Embodiment 3 >>
FIG. 5 is a circuit diagram showing a configuration of a semiconductor device including a reference power supply voltage circuit 3B according to Embodiment 3 of the present invention. The semiconductor device according to the present embodiment is different from the semiconductor device according to the second embodiment in FIG. 3 in that a reference power supply voltage circuit 3B is provided instead of the reference power supply voltage circuit 3A in FIG. The reference power supply voltage circuit 3B is different from the reference power supply voltage circuit 3A according to the second embodiment of FIG. 3 in that it has a pre-operation indefinite period malfunction prevention circuit 7B instead of the pre-operation indefinite period malfunction prevention circuit 7A. The pre-operation indefinite period malfunction prevention circuit 7B has the bipolar transistors T1 to TN connected in series with each other in place of the diodes D1 to DN, and prevents malfunction during the pre-operation indefinite period according to the second embodiment shown in FIG. Different from the circuit 7A. In other respects, the configuration is the same as that of the semiconductor device according to the second embodiment of FIG. 3, and the components denoted by the same reference numerals have the same configuration and operation, and therefore, detailed description thereof will not be repeated. . Note that the forward voltage of each bipolar transistor T1 to TN of the malfunction prevention circuit 7B before the indefinite period of operation is VBE, and the voltage generated when all the bipolar transistors T1 to TN are conductive is N · VBE.

Next, the operation of the semiconductor device including the reference power supply voltage circuit 3B according to the present embodiment will be described with reference to FIG. FIG. 6 is a diagram showing the relationship between the voltage at the VCC terminal 11 and the voltage at the VDD terminal 12 when the semiconductor device including the reference power supply voltage circuit 3B configured as shown in FIG. In FIG. 6 , VDD_0 is the minimum voltage at the VDD terminal 12 at which a circuit operating with the voltage at the VDD terminal 12 as a reference voltage can operate stably. When the voltage at the VDD terminal 12 is smaller than the voltage VDD_0, the circuit becomes unstable. VCC_0 indicates the minimum voltage at the VCC terminal 11 at which the first operation circuit 5 that operates using the voltage at the VCC terminal 11 as a reference voltage can operate stably. That is, when the voltage at the VCC terminal 11 is smaller than the voltage VCC_0, the first operation circuit 5 that operates using the voltage at the VCC terminal 11 as a reference voltage becomes unstable. Further, the threshold voltage VTH of the field effect transistor 22 of the pre-operation indefinite period malfunction prevention circuit 7B is set in advance so as to satisfy the relationship of VTH> VDD_0.

  First, when the power supply 1 is applied, the capacitor 15 connected to the VCC potential is charged by the VCC power supply circuit 2, and the voltage at the VCC terminal 11 gradually increases. In a state where the voltage at the VCC terminal 11 is lower than the threshold voltage VTH of the transistor 22, the transistor 22 does not operate, so the voltage at the VDD terminal 12 is maintained at the zero potential which is the circuit reference potential. When the voltage at the VCC terminal 11 further rises to be equal to or higher than the threshold value VTH of the transistor 22, the transistor 22 is turned on, and the voltage at the VDD terminal 12 is switched from zero potential to the voltage VDD_1 equal to the voltage at the VCC terminal 11. At this time, the voltage VDD_1 satisfies a relationship of VDD_1> VDD_0. Therefore, the second operation circuit 6 that operates using the voltage at the VDD terminal 12 as a reference voltage can operate stably. The circuit reference block 4 outputs a high-level V1 signal that controls the second operation circuit 6 to an operation state. Until the voltage at the VCC terminal 11 reaches the voltage N · VBE from the voltage VTH, the voltage at the VDD terminal 12 is equal to the voltage at the VCC terminal 11.

Next, when the voltage at the VCC terminal 11 further rises and reaches the voltage N · VBE, the N bipolar transistors T1 to TN are turned on, and the transistor 21 is turned on. Therefore, the gate terminal voltage of the transistor 21 becomes equal to the voltage of the VCC terminal 11, and the transistor 22 is turned off. As a result, the voltage at the VDD terminal 12 falls to a voltage VDD_2 obtained by subtracting the threshold voltage VBE of the transistor 25 from the voltage divided by the resistors 23 and 24 of the VDD power supply circuit 8. At this time, the first operation circuit 5 that operates using the voltage at the VCC terminal 11 as a reference voltage can operate stably. The comparator 10A outputs a high-level V2 signal that controls the first operating circuit 5 to the operating state. At this time, since the voltage VDD_2 is set in advance so as to satisfy the relationship of VDD_2> VDD_0, the second operation circuit 6 that operates using the voltage at the VDD terminal 12 as a reference voltage can continue to operate stably. Thereafter, the voltage at the VDD terminal 12 increases in proportion to the voltage at the VCC terminal 11 until the voltage at the VCC terminal 11 further increases and reaches a certain level. When the voltage at the VCC terminal 11 reaches a certain level, the second operation circuit 6 outputs a signal V3 to the VCC power supply circuit 2 and controls the output voltage of the VCC power supply circuit 2 to be constant.

  As described above, according to the reference power supply voltage circuit 3B according to the present embodiment, the reference power supply voltage circuit having the same effect as that of the first embodiment can be easily realized by the above circuit configuration. Further, the voltage N · VBE used for switching the voltage of the VDD terminal 12 can be easily adjusted to other values by adjusting the number of the bipolar transistors T1 to TN.

  In FIG. 5, the bipolar transistors T1 to TN are bipolar transistors of the same type as the bipolar transistor 25 of the VDD power supply circuit 8A. However, the present invention is not limited to this configuration, and the bipolar transistors T <b> 1 to TN may be different types of bipolar transistors from the bipolar transistor 25.

  The present invention can be used for a reference power supply voltage circuit such as a semiconductor device used for a switching power supply or the like.

1 is a circuit diagram showing a configuration of a semiconductor device including a reference power supply voltage circuit 3 according to Embodiment 1 of the present invention. FIG. 2 is a diagram illustrating a relationship between a voltage at a VCC terminal 11 and a voltage at a VDD terminal 12 when the reference power supply voltage circuit 3 in FIG. 1 is started. It is a circuit diagram which shows the structure of the semiconductor device provided with 3 A of reference power supply voltage circuits which concern on Embodiment 2 of this invention. FIG. 4 is a diagram showing a relationship between a voltage at a VCC terminal 11 and a voltage at a VDD terminal 12 when the reference power supply voltage circuit 3A of FIG. It is a circuit diagram which shows the structure of the semiconductor device provided with the reference power supply voltage circuit 3B which concerns on Embodiment 3 of this invention. FIG. 6 is a diagram showing the relationship between the voltage at the VCC terminal 11 and the voltage at the VDD terminal 12 when the reference power supply voltage circuit 3B of FIG.

Explanation of symbols

1 ... Power supply
2 ... VCC power supply circuit,
3, 3A, 3B ... reference power supply voltage circuit,
4 ... Circuit reference block,
5, 6 ... operation circuit,
7, 7A, 7B ... malfunction prevention circuit for an indefinite period before operation,
8, 8A ... VDD power supply circuit,
9, 9A ... VCC detection circuit,
10, 10A ... comparator,
11, 12, 13, 14 ... terminals,
15 ... Capacitor,
20, 23, 24, 26, 27, 32, 33 ... resistance,
21, 22, 28, 29 ... field effect transistors,
25, 30, 31 ... bipolar transistors,
D1 to DN: diode,
T1 to TN: Bipolar transistors.

Claims (5)

  1. A first reference voltage generated by a first reference voltage source is input, a second reference voltage equal to or lower than the first reference voltage is generated based on the first reference voltage, and a second reference voltage is generated as a power supply voltage. A second reference voltage source for supplying the operation circuit and the circuit reference block;
    A detecting means for generating a detection signal indicating the detection result by detecting the first reference voltage,
    A comparator that outputs a signal for controlling the operation state and the stop state of the first operation circuit using the first reference voltage as a power supply voltage by comparing the voltage level of the detection signal with a predetermined reference detection voltage. When,
    When the first reference voltage is input and the input first reference voltage is lower than a first predetermined voltage, the second reference voltage is maintained at a zero potential , and the first reference voltage is When the voltage is equal to or higher than the first predetermined voltage and lower than the second predetermined voltage, the second reference voltage is set equal to the first reference voltage, and the first reference voltage is equal to or higher than the second predetermined voltage. A pre-operation indefinite period malfunction prevention circuit that sets the second reference voltage to a voltage proportional to the first reference voltage by a positive proportionality constant ,
    The reference detection voltage is set to a voltage corresponding to a minimum voltage generated by the circuit reference block and capable of stably operating the first operation circuit;
    The minimum voltage at which the second operation circuit can operate stably is smaller than the minimum voltage at which the first operation circuit can operate stably,
    The first predetermined voltage is set to a voltage greater than a minimum voltage at which the second operation circuit can stably operate and less than a minimum voltage at which the first operation circuit can stably operate,
    The reference power supply voltage circuit, wherein the second predetermined voltage is set to a voltage larger than a minimum voltage at which the first operation circuit can stably operate .
  2. The malfunction prevention circuit before the operation indefinite period,
    A diode part having a cathode terminal connected to the zero potential and providing a forward voltage which is the second predetermined voltage;
    A first resistor connected between the first reference voltage source and an anode terminal of the diode;
    A first switch having one terminal connected to the first reference voltage source, the other terminal connected to the zero potential via a second resistor, and a control terminal connected to the anode terminal of the diode section Elements,
    One terminal is connected to the first reference voltage source, the other terminal is connected to the second reference voltage source, and a control terminal is a connection point between the second resistor and the first switch element. A connected second switch element;
    The reference power supply voltage circuit according to claim 1, further comprising:
  3. The diode unit, reference power supply voltage circuit according to claim 2, characterized in that it comprises a plurality of diodes connected in series to each other.
  4. 3. The reference power supply voltage circuit according to claim 2 , wherein the diode unit includes a plurality of bipolar transistors connected in series with each other.
  5. 3. The reference power supply voltage circuit according to claim 2, wherein the first and second switch elements are P-type transistors.
JP2006092988A 2006-03-30 2006-03-30 Reference power supply voltage circuit Expired - Fee Related JP4295289B2 (en)

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JP2006092988A JP4295289B2 (en) 2006-03-30 2006-03-30 Reference power supply voltage circuit
US11/723,530 US7508254B2 (en) 2006-03-30 2007-03-20 Reference supply voltage circuit using more than two reference supply voltages
CN 200710088469 CN101046698B (en) 2006-03-30 2007-03-27 Reference supply voltage circuit using more than two reference supply voltages

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JP5147554B2 (en) * 2008-06-10 2013-02-20 パナソニック株式会社 Switching power supply device and semiconductor device used therefor
JP2010086642A (en) * 2008-10-03 2010-04-15 Nec Electronics Corp Semiconductor device and method for supplying internal power supply of semiconductor device
CN101751061B (en) 2008-12-17 2012-04-18 上海华虹Nec电子有限公司 High voltage stabilizer and high voltage intrinsic NMOS tube
JP2015011505A (en) * 2013-06-28 2015-01-19 ソニー株式会社 Voltage detector, electronic device, and control method of voltage detector

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JP2925470B2 (en) 1995-03-17 1999-07-28 東光株式会社 Series control type regulator
JP3434788B2 (en) 1999-11-29 2003-08-11 松下電器産業株式会社 Semiconductor device for switching power supply
JP2002312043A (en) 2001-04-10 2002-10-25 Ricoh Co Ltd Voltage regulator
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US7508254B2 (en) 2009-03-24
JP2007265336A (en) 2007-10-11

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