JP4276845B2 - 基板を処理するための方法及び装置 - Google Patents

基板を処理するための方法及び装置 Download PDF

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Publication number
JP4276845B2
JP4276845B2 JP2002584378A JP2002584378A JP4276845B2 JP 4276845 B2 JP4276845 B2 JP 4276845B2 JP 2002584378 A JP2002584378 A JP 2002584378A JP 2002584378 A JP2002584378 A JP 2002584378A JP 4276845 B2 JP4276845 B2 JP 4276845B2
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Japan
Prior art keywords
hydrogen
oxygen
enriched
process gas
combustion chamber
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JP2002584378A
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English (en)
Japanese (ja)
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JP2004522302A5 (https=
JP2004522302A (ja
Inventor
ロータース ゲオルク
マーダー ローラント
ゾンマー ヘルムート
エルリク ゲンリ
パシュット イェフダ
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Mattson Thermal Products GmbH
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Mattson Thermal Products GmbH
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    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F22—STEAM GENERATION
    • F22B—METHODS OF STEAM GENERATION; STEAM BOILERS
    • F22B1/00—Methods of steam generation characterised by form of heating method
    • F22B1/003—Methods of steam generation characterised by form of heating method using combustion of hydrogen with oxygen
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6302—Non-deposition formation processes
    • H10P14/6304—Formation by oxidation, e.g. oxidation of the substrate
    • H10P14/6306—Formation by oxidation, e.g. oxidation of the substrate of the semiconductor materials
    • H10P14/6308—Formation by oxidation, e.g. oxidation of the substrate of the semiconductor materials of Group IV semiconductors

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Combustion & Propulsion (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Development (AREA)
  • Sustainable Energy (AREA)
  • Physics & Mathematics (AREA)
  • Thermal Sciences (AREA)
  • Mechanical Engineering (AREA)
  • General Engineering & Computer Science (AREA)
  • Formation Of Insulating Films (AREA)
JP2002584378A 2001-04-23 2002-04-19 基板を処理するための方法及び装置 Expired - Fee Related JP4276845B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE10119741A DE10119741B4 (de) 2001-04-23 2001-04-23 Verfahren und Vorrichtung zum Behandeln von Halbleitersubstraten
PCT/EP2002/004345 WO2002086958A1 (de) 2001-04-23 2002-04-19 Verfahren und vorrichtung zum erzeugen von prozessgasen

Publications (3)

Publication Number Publication Date
JP2004522302A JP2004522302A (ja) 2004-07-22
JP2004522302A5 JP2004522302A5 (https=) 2006-01-05
JP4276845B2 true JP4276845B2 (ja) 2009-06-10

Family

ID=7682338

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2002584378A Expired - Fee Related JP4276845B2 (ja) 2001-04-23 2002-04-19 基板を処理するための方法及び装置

Country Status (7)

Country Link
US (1) US7144826B2 (https=)
EP (1) EP1382063A1 (https=)
JP (1) JP4276845B2 (https=)
KR (1) KR100700240B1 (https=)
DE (1) DE10119741B4 (https=)
TW (1) TW588419B (https=)
WO (1) WO2002086958A1 (https=)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4609098B2 (ja) * 2004-03-24 2011-01-12 東京エレクトロン株式会社 被処理体の酸化方法、酸化装置及び記憶媒体
KR100966086B1 (ko) * 2005-03-08 2010-06-28 가부시키가이샤 히다치 고쿠사이 덴키 반도체장치의 제조 방법 및 기판처리장치
JP4453021B2 (ja) * 2005-04-01 2010-04-21 セイコーエプソン株式会社 半導体装置の製造方法及び半導体製造装置
GB0613044D0 (en) * 2006-06-30 2006-08-09 Boc Group Plc Gas combustion apparatus
US20080257719A1 (en) * 2007-04-21 2008-10-23 Ted Suratt Apparatus And Method For Making Flammable Gas
US9698439B2 (en) 2008-02-19 2017-07-04 Proton Power, Inc. Cellulosic biomass processing for hydrogen extraction
US8303676B1 (en) 2008-02-19 2012-11-06 Proton Power, Inc. Conversion of C-O-H compounds into hydrogen for power or heat generation
US9023243B2 (en) 2012-08-27 2015-05-05 Proton Power, Inc. Methods, systems, and devices for synthesis gas recapture
US10005961B2 (en) 2012-08-28 2018-06-26 Proton Power, Inc. Methods, systems, and devices for continuous liquid fuel production from biomass
CA2884860C (en) 2012-09-18 2021-04-20 Proton Power, Inc. C-o-h compound processing for hydrogen or liquid fuel production
US10563128B2 (en) 2014-01-10 2020-02-18 Proton Power, Inc. Methods for aerosol capture
US20150307784A1 (en) 2014-03-05 2015-10-29 Proton Power, Inc. Continuous liquid fuel production methods, systems, and devices
US9890332B2 (en) 2015-03-08 2018-02-13 Proton Power, Inc. Biochar products and production
CN107154354B (zh) 2016-03-03 2020-12-11 上海新昇半导体科技有限公司 晶圆热处理的方法
CN112413589B (zh) * 2020-11-04 2023-04-14 北京北方华创微电子装备有限公司 半导体工艺设备的点火装置及半导体工艺设备

Family Cites Families (21)

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US3630956A (en) * 1969-04-01 1971-12-28 Air Prod & Chem Method of producing gases with controlled concentrations of water vapor
US3907981A (en) * 1973-03-12 1975-09-23 Rockwell International Corp Method for recombining hydrogen and oxygen
JPS57194522A (en) 1981-05-27 1982-11-30 Oki Electric Ind Co Ltd Thermal treatment of semiconductor wafer
DE3143050A1 (de) * 1981-10-30 1983-05-05 Varta Batterie Ag, 3000 Hannover Verfahren zur druckgesteuerten h(pfeil abwaerts)2(pfeil abwaerts)/o(pfeil abwaerts)2(pfeil abwaerts)-rekombination
DE3729113A1 (de) * 1987-09-01 1989-03-09 Fraunhofer Ges Forschung Verfahren zur druckgesteuerten katalytischen verbrennung von brennbaren gasen in einem oxidationsreaktor
DE3809367A1 (de) * 1988-03-19 1989-09-28 Kernforschungsz Karlsruhe Verfahren und vorrichtung zur verbrennung von wasserstoff mit sauerstoff
FR2643364B1 (fr) * 1989-02-22 1993-08-13 Air Liquide Procede d'elaboration de composants multicouches ceramique-metal et appareil pour sa mise en oeuvre
JPH088255B2 (ja) * 1990-02-20 1996-01-29 株式会社東芝 半導体基板表面処理方法および半導体基板表面処理装置
US5316796A (en) * 1990-03-09 1994-05-31 Nippon Telegraph And Telephone Corporation Process for growing a thin metallic film
US5527926A (en) * 1990-11-26 1996-06-18 Bracco International B.V. Methods and compositions for using non-ionic contrast agents to reduce the risk of clot formation in diagnostic procedures
US5257926A (en) * 1991-12-17 1993-11-02 Gideon Drimer Fast, safe, pyrogenic external torch assembly
JP3310386B2 (ja) * 1993-05-25 2002-08-05 忠弘 大見 絶縁酸化膜の形成方法及び半導体装置
JPH0710935U (ja) * 1993-07-24 1995-02-14 ヤマハ株式会社 縦型熱処理炉
JPH0920501A (ja) * 1995-07-06 1997-01-21 Nippon Seisan Gijutsu Kenkyusho:Kk 超高純度水の製造方法およびその装置
JP3155487B2 (ja) * 1997-02-12 2001-04-09 株式会社日立国際電気 ウェット酸化装置およびウェット酸化方法
JP3808975B2 (ja) * 1997-06-17 2006-08-16 忠弘 大見 半導体製造用水分の発生方法
JP3644810B2 (ja) * 1997-12-10 2005-05-11 株式会社フジキン 少流量の水分供給方法
JPH11204511A (ja) * 1998-01-08 1999-07-30 Kokusai Electric Co Ltd シリコン熱酸化膜の形成装置
US6114258A (en) * 1998-10-19 2000-09-05 Applied Materials, Inc. Method of oxidizing a substrate in the presence of nitride and oxynitride films
US6372663B1 (en) * 2000-01-13 2002-04-16 Taiwan Semiconductor Manufacturing Company, Ltd Dual-stage wet oxidation process utilizing varying H2/O2 ratios
TW200416772A (en) * 2002-06-06 2004-09-01 Asml Us Inc System and method for hydrogen-rich selective oxidation

Also Published As

Publication number Publication date
US7144826B2 (en) 2006-12-05
EP1382063A1 (de) 2004-01-21
TW588419B (en) 2004-05-21
KR20030092091A (ko) 2003-12-03
JP2004522302A (ja) 2004-07-22
WO2002086958A1 (de) 2002-10-31
DE10119741A1 (de) 2002-10-24
KR100700240B1 (ko) 2007-03-26
DE10119741B4 (de) 2012-01-19
US20040137754A1 (en) 2004-07-15

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