JP4162030B2 - 放射線検出器 - Google Patents
放射線検出器 Download PDFInfo
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- JP4162030B2 JP4162030B2 JP2006542304A JP2006542304A JP4162030B2 JP 4162030 B2 JP4162030 B2 JP 4162030B2 JP 2006542304 A JP2006542304 A JP 2006542304A JP 2006542304 A JP2006542304 A JP 2006542304A JP 4162030 B2 JP4162030 B2 JP 4162030B2
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- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
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- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- 229910004611 CdZnTe Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
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Images
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
- G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
- G01T1/16—Measuring radiation intensity
- G01T1/24—Measuring radiation intensity with semiconductor detectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/115—Devices sensitive to very short wavelength, e.g. X-rays, gamma-rays or corpuscular radiation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14609—Pixel-elements with integrated switching, control, storage or amplification elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14665—Imagers using a photoconductor layer
- H01L27/14676—X-ray, gamma-ray or corpuscular radiation imagers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/09—Devices sensitive to infrared, visible or ultraviolet radiation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/12—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto
- H01L31/16—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the semiconductor device sensitive to radiation being controlled by the light source or sources
- H01L31/161—Semiconductor device sensitive to radiation without a potential-jump or surface barrier, e.g. photoresistors
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/30—Circuitry of solid-state image sensors [SSIS]; Control thereof for transforming X-rays into image signals
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14632—Wafer-level processed structures
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N5/00—Details of television systems
- H04N5/30—Transforming light or analogous information into electric information
- H04N5/32—Transforming X-rays
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Multimedia (AREA)
- Signal Processing (AREA)
- Life Sciences & Earth Sciences (AREA)
- High Energy & Nuclear Physics (AREA)
- Molecular Biology (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Measurement Of Radiation (AREA)
- Solid State Image Pick-Up Elements (AREA)
Description
すなわち、請求項1に記載の発明は、放射線の入射により前記放射線の情報を電荷情報に変換する半導体層を有した基板と、その基板の放射線入射側とは逆側に設けられた平面形状の光照射手段とを備え、変換された電荷情報を読み出すことで放射線を検出し、前記半導体層に残留した電荷情報を前記光照射手段から照射された光によって除去する放射線検出器であって、前記基板と光照射手段とを、それらの間に光透過性を有する物質を介在させることで取り付けることを特徴とするものである。
11 … ガラス基板
14 … X線感応型半導体
28 … 光照射機構
29 … 導光部
29a … 光拡散シート
29b … 光反射シート
29c … 透明板
30 … 線状発光部
32 … 接着シート
33 … 板材
図1は、実施例1に係る側面視したフラットパネル型X線検出器の等価回路であり、図2は、平面視したフラットパネル型X線検出器の等価回路であり、図3は、フラットパネル型X線検出器の断面図である。後述する実施例2も含めて本実施例1では、放射線検出器として、直接変換型のフラットパネル型X線検出器(以下、適宜「FPD」という)を例に採って説明する。
図4は、実施例2に係るフラットパネル型X線検出器(FPD)の断面図である。実施例1と共通する箇所については、同じ符号を付して図示を省略するとともに、その説明を省略する。なお、ガラス基板11やX線感応型半導体14、スイッチング素子12やキャリア収集電極13のパターン形成などについては、図1、図2と同様の構成である。
Claims (5)
- 放射線の入射により前記放射線の情報を電荷情報に変換する半導体層を有した基板と、その基板の放射線入射側とは逆側に設けられた平面形状の光照射手段とを備え、変換された電荷情報を読み出すことで放射線を検出し、前記半導体層に残留した電荷情報を前記光照射手段から照射された光によって除去する放射線検出器であって、前記基板と光照射手段とを、それらの間に両面が平面形状であって基板側の面を粗面加工された光透過性を有する板材を介在させて取り付けることを特徴とする放射線検出器。
- 請求項1に記載の放射線検出器において、ゲル状の接着シートを前記基板と前記板材との間に介在させることで、基板と板材とを接着固定して取り付けることを特徴とする放射線検出器。
- 請求項1または請求項2に記載の放射線検出器において、前記光照射手段は、平面形状の導光手段と、その端部に設けられた線状発光手段とを備え、前記導光手段を、基板側に設けられた光拡散シートと、基板側とは逆側に設けられた光反射シートと、それらシートの間に狭持された透明板とで構成することを特徴とする放射線検出器。
- 請求項3に記載の放射線検出器において、前記光拡散シートの表面を粗面加工することを特徴とする放射線検出器。
- 請求項1から請求項4のいずれかに記載の放射線検出器において、前記光透過性を有する物質を、前記基板よりも熱伝導性の大きい材質で形成することを特徴とする放射線検出器。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004315527 | 2004-10-29 | ||
JP2004315527 | 2004-10-29 | ||
PCT/JP2005/018144 WO2006046384A1 (ja) | 2004-10-29 | 2005-09-30 | 放射線検出器 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPWO2006046384A1 JPWO2006046384A1 (ja) | 2008-08-07 |
JP4162030B2 true JP4162030B2 (ja) | 2008-10-08 |
Family
ID=36227630
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2006542304A Active JP4162030B2 (ja) | 2004-10-29 | 2005-09-30 | 放射線検出器 |
Country Status (5)
Country | Link |
---|---|
US (1) | US20080087832A1 (ja) |
JP (1) | JP4162030B2 (ja) |
KR (1) | KR100914591B1 (ja) |
CN (1) | CN101048674A (ja) |
WO (1) | WO2006046384A1 (ja) |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4992358B2 (ja) * | 2006-09-14 | 2012-08-08 | 株式会社島津製作所 | 電磁波検出器およびこれを用いた放射線撮影装置 |
KR100978616B1 (ko) * | 2008-02-20 | 2010-08-27 | 주식회사바텍 | 대면적 x선 검출장치 |
WO2009125476A1 (ja) * | 2008-04-08 | 2009-10-15 | 株式会社島津製作所 | 放射線検出器 |
JP5222398B2 (ja) * | 2009-04-30 | 2013-06-26 | 株式会社島津製作所 | 放射線検出器 |
JP5683856B2 (ja) * | 2010-07-15 | 2015-03-11 | 日立アロカメディカル株式会社 | 放射線検出装置 |
KR101174477B1 (ko) | 2010-11-17 | 2012-08-17 | 주식회사 디알텍 | 디지털 x선 검출장치 |
US8772728B2 (en) * | 2010-12-31 | 2014-07-08 | Carestream Health, Inc. | Apparatus and methods for high performance radiographic imaging array including reflective capability |
JP2014071077A (ja) * | 2012-10-01 | 2014-04-21 | Canon Inc | 放射線検出装置、及び、放射線検出システム |
JP2015102419A (ja) * | 2013-11-25 | 2015-06-04 | キヤノン株式会社 | 放射線検出装置および放射線撮像システム |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE69731061T2 (de) * | 1996-07-08 | 2005-10-06 | Koninklijke Philips Electronics N.V. | Röntgenstrahluntersuchungsvorrichtung mit halbleiterröntgendetektor |
JP2000214297A (ja) * | 1999-01-25 | 2000-08-04 | Direct Radiography Corp | 電子信号の修正方法及び残像除去方法 |
US6900442B2 (en) * | 1999-07-26 | 2005-05-31 | Edge Medical Devices Ltd. | Hybrid detector for X-ray imaging |
JP3978971B2 (ja) * | 2000-03-28 | 2007-09-19 | 株式会社島津製作所 | 2次元画像検出器およびその製造方法 |
JP5016746B2 (ja) * | 2000-07-28 | 2012-09-05 | キヤノン株式会社 | 撮像装置及びその駆動方法 |
JP4437609B2 (ja) * | 2000-10-25 | 2010-03-24 | 株式会社日立メディコ | X線画像診断装置 |
JP4211435B2 (ja) * | 2002-08-30 | 2009-01-21 | 株式会社島津製作所 | 放射線検出器 |
JP4138458B2 (ja) * | 2002-11-20 | 2008-08-27 | 富士フイルム株式会社 | 放射線画像記録媒体 |
-
2005
- 2005-09-30 US US11/666,463 patent/US20080087832A1/en not_active Abandoned
- 2005-09-30 JP JP2006542304A patent/JP4162030B2/ja active Active
- 2005-09-30 WO PCT/JP2005/018144 patent/WO2006046384A1/ja active Application Filing
- 2005-09-30 KR KR1020077008563A patent/KR100914591B1/ko not_active IP Right Cessation
- 2005-09-30 CN CNA2005800372963A patent/CN101048674A/zh active Pending
Also Published As
Publication number | Publication date |
---|---|
JPWO2006046384A1 (ja) | 2008-08-07 |
CN101048674A (zh) | 2007-10-03 |
US20080087832A1 (en) | 2008-04-17 |
KR20070063007A (ko) | 2007-06-18 |
KR100914591B1 (ko) | 2009-08-31 |
WO2006046384A1 (ja) | 2006-05-04 |
WO2006046384B1 (ja) | 2006-09-14 |
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