JP4101670B2 - Lcd製造用ポジ型ホトレジスト組成物およびレジストパターンの形成方法 - Google Patents
Lcd製造用ポジ型ホトレジスト組成物およびレジストパターンの形成方法 Download PDFInfo
- Publication number
- JP4101670B2 JP4101670B2 JP2003024427A JP2003024427A JP4101670B2 JP 4101670 B2 JP4101670 B2 JP 4101670B2 JP 2003024427 A JP2003024427 A JP 2003024427A JP 2003024427 A JP2003024427 A JP 2003024427A JP 4101670 B2 JP4101670 B2 JP 4101670B2
- Authority
- JP
- Japan
- Prior art keywords
- molecular weight
- photoresist composition
- positive photoresist
- resist pattern
- carbon atoms
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 0 Cc1c(*)c(O)c(*)c(*)c1* Chemical compound Cc1c(*)c(O)c(*)c(*)c1* 0.000 description 3
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Classifications
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
- G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L61/00—Compositions of condensation polymers of aldehydes or ketones; Compositions of derivatives of such polymers
- C08L61/04—Condensation polymers of aldehydes or ketones with phenols only
- C08L61/06—Condensation polymers of aldehydes or ketones with phenols only of aldehydes with phenols
- C08L61/14—Modified phenol-aldehyde condensates
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/022—Quinonediazides
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/022—Quinonediazides
- G03F7/0226—Quinonediazides characterised by the non-macromolecular additives
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/022—Quinonediazides
- G03F7/023—Macromolecular quinonediazides; Macromolecular additives, e.g. binders
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/022—Quinonediazides
- G03F7/023—Macromolecular quinonediazides; Macromolecular additives, e.g. binders
- G03F7/0233—Macromolecular quinonediazides; Macromolecular additives, e.g. binders characterised by the polymeric binders or the macromolecular additives other than the macromolecular quinonediazides
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/022—Quinonediazides
- G03F7/023—Macromolecular quinonediazides; Macromolecular additives, e.g. binders
- G03F7/0233—Macromolecular quinonediazides; Macromolecular additives, e.g. binders characterised by the polymeric binders or the macromolecular additives other than the macromolecular quinonediazides
- G03F7/0236—Condensation products of carbonyl compounds and phenolic compounds, e.g. novolak resins
Landscapes
- Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- General Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Health & Medical Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Medicinal Chemistry (AREA)
- Polymers & Plastics (AREA)
- Organic Chemistry (AREA)
- Materials For Photolithography (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Phenolic Resins Or Amino Resins (AREA)
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2003024427A JP4101670B2 (ja) | 2003-01-31 | 2003-01-31 | Lcd製造用ポジ型ホトレジスト組成物およびレジストパターンの形成方法 |
CNB2004100022100A CN1229690C (zh) | 2003-01-31 | 2004-01-15 | Lcd制造用正型光致抗蚀剂组合物以及抗蚀图形的形成方法 |
KR1020040003544A KR100570948B1 (ko) | 2003-01-31 | 2004-01-17 | Lcd 제조용 포지티브형 포토레지스트 조성물 및레지스트 패턴의 형성방법 |
TW093101885A TWI304918B (en) | 2003-01-31 | 2004-01-28 | Positive photoresist composition for manufacturing lcd and method for forming resist pattern |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2003024427A JP4101670B2 (ja) | 2003-01-31 | 2003-01-31 | Lcd製造用ポジ型ホトレジスト組成物およびレジストパターンの形成方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2004233846A JP2004233846A (ja) | 2004-08-19 |
JP4101670B2 true JP4101670B2 (ja) | 2008-06-18 |
Family
ID=32952962
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2003024427A Expired - Fee Related JP4101670B2 (ja) | 2003-01-31 | 2003-01-31 | Lcd製造用ポジ型ホトレジスト組成物およびレジストパターンの形成方法 |
Country Status (4)
Country | Link |
---|---|
JP (1) | JP4101670B2 (ko) |
KR (1) | KR100570948B1 (ko) |
CN (1) | CN1229690C (ko) |
TW (1) | TWI304918B (ko) |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4935269B2 (ja) * | 2005-09-21 | 2012-05-23 | 東レ株式会社 | ポジ型感光性樹脂組成物 |
KR101351311B1 (ko) * | 2006-03-08 | 2014-01-14 | 주식회사 동진쎄미켐 | 감광성 수지 조성물 |
JP2009222733A (ja) * | 2008-01-25 | 2009-10-01 | Rohm & Haas Electronic Materials Llc | ノボラック樹脂ブレンドを含むフォトレジスト |
KR101430962B1 (ko) * | 2008-03-04 | 2014-08-18 | 주식회사 동진쎄미켐 | 포토레지스트 조성물 및 이를 이용한 어레이 기판의 제조방법 |
KR101632965B1 (ko) * | 2008-12-29 | 2016-06-24 | 삼성디스플레이 주식회사 | 포토레지스트 조성물 및 박막 트랜지스터 기판의 제조 방법 |
CN101907827B (zh) * | 2009-06-08 | 2011-11-23 | 奇美实业股份有限公司 | 正型感光性树脂组成物及其所形成的液晶定向控制用突起 |
JP6138067B2 (ja) * | 2014-02-03 | 2017-05-31 | ローム アンド ハース エレクトロニック マテリアルズ エルエルシーRohm and Haas Electronic Materials LLC | ノボラック樹脂ブレンドを含むフォトレジスト |
CN107844028B (zh) * | 2017-11-07 | 2021-04-30 | 潍坊星泰克微电子材料有限公司 | 一种光刻胶、制备方法及其光刻工艺 |
JP6691203B1 (ja) * | 2018-12-26 | 2020-04-28 | 東京応化工業株式会社 | 化学増幅型ポジ型感光性樹脂組成物、感光性ドライフィルム、感光性ドライフィルムの製造方法、パターン化されたレジスト膜の製造方法、鋳型付き基板の製造方法及びめっき造形物の製造方法 |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2001051419A (ja) | 1999-08-06 | 2001-02-23 | Jsr Corp | 感放射線性樹脂組成物 |
JP2002278060A (ja) | 2001-03-16 | 2002-09-27 | Jsr Corp | 感放射線性樹脂組成物 |
JP4213366B2 (ja) | 2001-06-12 | 2009-01-21 | Azエレクトロニックマテリアルズ株式会社 | 厚膜レジストパターンの形成方法 |
-
2003
- 2003-01-31 JP JP2003024427A patent/JP4101670B2/ja not_active Expired - Fee Related
-
2004
- 2004-01-15 CN CNB2004100022100A patent/CN1229690C/zh not_active Expired - Lifetime
- 2004-01-17 KR KR1020040003544A patent/KR100570948B1/ko active IP Right Grant
- 2004-01-28 TW TW093101885A patent/TWI304918B/zh not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
KR20040069994A (ko) | 2004-08-06 |
TWI304918B (en) | 2009-01-01 |
CN1519648A (zh) | 2004-08-11 |
JP2004233846A (ja) | 2004-08-19 |
KR100570948B1 (ko) | 2006-04-13 |
CN1229690C (zh) | 2005-11-30 |
TW200424764A (en) | 2004-11-16 |
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