JP4073138B2 - 石英中に含有される金属の分析方法 - Google Patents

石英中に含有される金属の分析方法 Download PDF

Info

Publication number
JP4073138B2
JP4073138B2 JP2000029806A JP2000029806A JP4073138B2 JP 4073138 B2 JP4073138 B2 JP 4073138B2 JP 2000029806 A JP2000029806 A JP 2000029806A JP 2000029806 A JP2000029806 A JP 2000029806A JP 4073138 B2 JP4073138 B2 JP 4073138B2
Authority
JP
Japan
Prior art keywords
quartz
analyzing
layer
metal
metal contained
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2000029806A
Other languages
English (en)
Japanese (ja)
Other versions
JP2001223251A (ja
JP2001223251A5 (https=
Inventor
吉典 丸茂
要 鈴木
輝幸 林
隆司 棚橋
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Electron Ltd
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Priority to JP2000029806A priority Critical patent/JP4073138B2/ja
Publication of JP2001223251A publication Critical patent/JP2001223251A/ja
Publication of JP2001223251A5 publication Critical patent/JP2001223251A5/ja
Application granted granted Critical
Publication of JP4073138B2 publication Critical patent/JP4073138B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Images

Landscapes

  • Investigating, Analyzing Materials By Fluorescence Or Luminescence (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Weting (AREA)
JP2000029806A 2000-02-07 2000-02-07 石英中に含有される金属の分析方法 Expired - Fee Related JP4073138B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2000029806A JP4073138B2 (ja) 2000-02-07 2000-02-07 石英中に含有される金属の分析方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2000029806A JP4073138B2 (ja) 2000-02-07 2000-02-07 石英中に含有される金属の分析方法

Publications (3)

Publication Number Publication Date
JP2001223251A JP2001223251A (ja) 2001-08-17
JP2001223251A5 JP2001223251A5 (https=) 2006-03-23
JP4073138B2 true JP4073138B2 (ja) 2008-04-09

Family

ID=18554904

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2000029806A Expired - Fee Related JP4073138B2 (ja) 2000-02-07 2000-02-07 石英中に含有される金属の分析方法

Country Status (1)

Country Link
JP (1) JP4073138B2 (https=)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8021623B2 (en) 2003-10-08 2011-09-20 Tokyo Electron Limited Examination method and examination assistant device for quartz product of semiconductor processing apparatus
JP3890047B2 (ja) * 2003-10-08 2007-03-07 東京エレクトロン株式会社 石英中の金属分析方法及び分析用治具
JP4881656B2 (ja) * 2006-06-02 2012-02-22 東京エレクトロン株式会社 石英部材の分析方法
JP5101477B2 (ja) * 2008-12-09 2012-12-19 コバレントマテリアル株式会社 セラミックス部材の不純物分析方法
JP2011257436A (ja) * 2011-10-04 2011-12-22 Tokyo Electron Ltd 石英部材
JP6885287B2 (ja) * 2017-09-29 2021-06-09 株式会社Sumco 石英ルツボの不純物分析方法

Also Published As

Publication number Publication date
JP2001223251A (ja) 2001-08-17

Similar Documents

Publication Publication Date Title
KR100733201B1 (ko) 반도체 제조장치용 석영 부재, 반도체 제조장치용 석영 부재의 제조방법, 열처리 장치, 및 석영 부재중의 금속의 분석 방법
JP3494102B2 (ja) シリコンウエーハ中の金属不純物濃度評価方法
EP0488149B1 (en) Method of analyzing metal impurities in surface oxide film of semiconductor substrate
US6174740B1 (en) Method for analyzing impurities within silicon wafer
JP4073138B2 (ja) 石英中に含有される金属の分析方法
JP2004028787A (ja) 全反射蛍光ｘ線分析方法、全反射蛍光ｘ線分析前処理装置及び全反射蛍光ｘ線分析装置
TW416116B (en) Process for mapping metal contaminant concentration on a silicon wafer surface
JPH0964133A (ja) 半導体基板内部のＣｕ濃度の検出方法
JP2002296269A (ja) 試料水の水質評価装置および水質評価方法
JP2001153768A (ja) シリコン基板表面の金属不純物分析方法
JP3414976B2 (ja) 不純物分析試料容器およびそれに用いられる試料収容部材
JP3804864B2 (ja) 不純物の分析方法
CN101363780A (zh) 能够测量检验芯片上的粒子与缺陷数目的检测芯片的制造方法
CN112539982B (zh) 一种硅片样片的制作方法和硅片样片
JP2002184828A (ja) 半導体基板の金属不純物の分析方法
US6225136B1 (en) Method of producing a contaminated wafer
JPH06249764A (ja) シリコンウェハ表面の金属汚染分析用標準試料の作製方法
JPH10339691A (ja) 表面不純物測定方法
US20090277875A1 (en) Method for the Determination of the Surface Occupation of a Silica Glass Component
JP3097622B2 (ja) 定量汚染試料の作成方法
KR100551401B1 (ko) 실리콘 시료의 벌크 금속오염 검사방법
JPH0562958A (ja) 薬液の純度評価法
JP2001099766A (ja) 半導体基板の分析方法
JP2002289660A (ja) 半導体ウエハの評価方法およびその評価装置
JP2762814B2 (ja) 不純物分析方法

Legal Events

Date Code Title Description
A521 Written amendment

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20060203

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20060203

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20071015

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20071106

A521 Written amendment

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20071225

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20080122

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20080122

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20110201

Year of fee payment: 3

R150 Certificate of patent or registration of utility model

Free format text: JAPANESE INTERMEDIATE CODE: R150

Ref document number: 4073138

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20110201

Year of fee payment: 3

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20140201

Year of fee payment: 6

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

LAPS Cancellation because of no payment of annual fees