JP4046884B2 - 位置計測方法および該位置計測法を用いた半導体露光装置 - Google Patents
位置計測方法および該位置計測法を用いた半導体露光装置 Download PDFInfo
- Publication number
- JP4046884B2 JP4046884B2 JP08405299A JP8405299A JP4046884B2 JP 4046884 B2 JP4046884 B2 JP 4046884B2 JP 08405299 A JP08405299 A JP 08405299A JP 8405299 A JP8405299 A JP 8405299A JP 4046884 B2 JP4046884 B2 JP 4046884B2
- Authority
- JP
- Japan
- Prior art keywords
- waveform
- mark
- template
- coincidence
- degree
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Images
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
- G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
- G03F9/7092—Signal processing
Landscapes
- Engineering & Computer Science (AREA)
- Signal Processing (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Length Measuring Devices By Optical Means (AREA)
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP08405299A JP4046884B2 (ja) | 1999-03-26 | 1999-03-26 | 位置計測方法および該位置計測法を用いた半導体露光装置 |
| US09/533,690 US6538260B1 (en) | 1999-03-26 | 2000-03-23 | Position measuring method, and semiconductor device manufacturing method and apparatus using the same |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP08405299A JP4046884B2 (ja) | 1999-03-26 | 1999-03-26 | 位置計測方法および該位置計測法を用いた半導体露光装置 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2000275010A JP2000275010A (ja) | 2000-10-06 |
| JP2000275010A5 JP2000275010A5 (https=) | 2006-05-18 |
| JP4046884B2 true JP4046884B2 (ja) | 2008-02-13 |
Family
ID=13819743
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP08405299A Expired - Fee Related JP4046884B2 (ja) | 1999-03-26 | 1999-03-26 | 位置計測方法および該位置計測法を用いた半導体露光装置 |
Country Status (2)
| Country | Link |
|---|---|
| US (1) | US6538260B1 (https=) |
| JP (1) | JP4046884B2 (https=) |
Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4178875B2 (ja) * | 2002-08-22 | 2008-11-12 | 株式会社ニコン | マーク位置検出装置、マーク位置検出方法、重ね合わせ測定装置、および、重ね合わせ測定方法 |
| TWI236562B (en) * | 2002-11-21 | 2005-07-21 | Hitachi Int Electric Inc | A method of detecting a pattern and an apparatus thereof |
| JP4101076B2 (ja) * | 2003-02-06 | 2008-06-11 | キヤノン株式会社 | 位置検出方法及び装置 |
| US7728953B2 (en) * | 2004-03-01 | 2010-06-01 | Nikon Corporation | Exposure method, exposure system, and substrate processing apparatus |
| WO2005083756A1 (ja) * | 2004-03-01 | 2005-09-09 | Nikon Corporation | 事前計測処理方法、露光システム及び基板処理装置 |
| JP4603814B2 (ja) * | 2004-04-23 | 2010-12-22 | キヤノン株式会社 | 露光装置、合焦位置検出装置及びそれらの方法、並びにデバイス製造方法 |
| JP3962736B2 (ja) * | 2004-10-08 | 2007-08-22 | キヤノン株式会社 | 露光装置およびデバイス製造方法 |
| US7702157B2 (en) * | 2005-03-30 | 2010-04-20 | Kabushiki Kaisha Toshiba | Pattern evaluation method, pattern matching method and computer readable medium |
| JP5507875B2 (ja) | 2009-04-14 | 2014-05-28 | キヤノン株式会社 | 露光装置、露光方法およびデバイス製造方法 |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5543921A (en) * | 1989-05-08 | 1996-08-06 | Canon Kabushiki Kaisha | Aligning method utilizing reliability weighting coefficients |
| JP3634487B2 (ja) | 1996-02-09 | 2005-03-30 | キヤノン株式会社 | 位置合せ方法、位置合せ装置、および露光装置 |
-
1999
- 1999-03-26 JP JP08405299A patent/JP4046884B2/ja not_active Expired - Fee Related
-
2000
- 2000-03-23 US US09/533,690 patent/US6538260B1/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| US6538260B1 (en) | 2003-03-25 |
| JP2000275010A (ja) | 2000-10-06 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP3002351B2 (ja) | 位置合わせ方法および装置 | |
| US9915878B2 (en) | Exposure apparatus, exposure method, and device manufacturing method | |
| JPH0562880A (ja) | 露光装置 | |
| JPH07335524A (ja) | 位置合わせ方法 | |
| JPH0945609A (ja) | ベストフォーカス決定方法及びそれを用いた露光条件決定方法 | |
| US12282263B2 (en) | Metrology system and lithographic system | |
| JP4046884B2 (ja) | 位置計測方法および該位置計測法を用いた半導体露光装置 | |
| JP3595707B2 (ja) | 露光装置および露光方法 | |
| JP3315540B2 (ja) | 位置計測装置、位置合わせ装置、露光装置およびデバイスの製造方法 | |
| WO2007038134A2 (en) | Method of aligning a particle-beam-generated pattern to a pattern on pre-patterned substrate | |
| JPH10242041A (ja) | 位置検出方法及びその装置並びに露光装置 | |
| JPH09166416A (ja) | レチクルパターンの相対的位置ずれ量計測方法およびレチクルパターンの相対的位置ずれ量計測装置 | |
| KR20200140714A (ko) | 얼라인먼트 장치, 얼라인먼트 방법, 리소그래피 장치, 및 물품의 제조방법 | |
| KR20220122489A (ko) | 검출장치, 검출방법, 프로그램, 리소그래피 장치, 및 물품 제조방법 | |
| JP4101076B2 (ja) | 位置検出方法及び装置 | |
| JP3600882B2 (ja) | 位置合わせ方法、露光方法、及び素子製造方法、並びに位置合わせ装置及び露光装置 | |
| JP2830462B2 (ja) | 位置合わせ装置、露光装置、及びそれらを用いた半導体素子の製造方法 | |
| JP3894505B2 (ja) | 位置検出方法、位置検出装置、半導体露光装置および半導体製造方法 | |
| JP3286124B2 (ja) | 位置合せ装置および方法 | |
| JPH1154418A (ja) | 信号波形補正方法および装置 | |
| JPH07211612A (ja) | 投影露光装置 | |
| JPH1152545A (ja) | レチクルおよびそれによって転写されたパターンならびにレチクルと半導体ウエハとの位置合わせ方法 | |
| JPH0737770A (ja) | 位置合わせ装置 | |
| JP3337862B2 (ja) | 位置計測方法及びそれを用いた位置計測装置 | |
| JP2698217B2 (ja) | 半導体ウエハの位置合わせ方法 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20060324 |
|
| A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20060324 |
|
| A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20070628 |
|
| A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20070703 |
|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20070903 |
|
| TRDD | Decision of grant or rejection written | ||
| A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20071113 |
|
| A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20071121 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20101130 Year of fee payment: 3 |
|
| R150 | Certificate of patent or registration of utility model |
Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20101130 Year of fee payment: 3 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20111130 Year of fee payment: 4 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20121130 Year of fee payment: 5 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20131130 Year of fee payment: 6 |
|
| LAPS | Cancellation because of no payment of annual fees |