JP3981967B2 - Silicon electrode plate for plasma etching with heat dissipation - Google Patents

Silicon electrode plate for plasma etching with heat dissipation Download PDF

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Publication number
JP3981967B2
JP3981967B2 JP05659598A JP5659598A JP3981967B2 JP 3981967 B2 JP3981967 B2 JP 3981967B2 JP 05659598 A JP05659598 A JP 05659598A JP 5659598 A JP5659598 A JP 5659598A JP 3981967 B2 JP3981967 B2 JP 3981967B2
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Japan
Prior art keywords
electrode plate
silicon electrode
alloy
made
plasma etching
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Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
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JP05659598A
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Japanese (ja)
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JPH11256370A (en
Inventor
保 森
文男 納田
久生 衣袋
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三菱マテリアル株式会社
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Description

[0001]
BACKGROUND OF THE INVENTION
The present invention relates to a silicon electrode plate for plasma etching having heat dissipation, and more particularly to a silicon electrode plate for plasma etching that has a more uniform temperature distribution than conventional ones and can therefore perform etching more uniformly than conventional ones. .
[0002]
[Prior art]
Generally, when manufacturing a semiconductor integrated circuit, it is necessary to etch a wafer. As a silicon electrode plate for plasma etching for etching this wafer, a silicon electrode plate as shown in the sectional view of FIG. A silicon electrode plate 9 for plasma etching in which 1 is fixed to a cooling plate 3 made of Al or an Al alloy with a bolt 6 is used. A silicon electrode plate 9 for plasma etching formed by fixing the silicon electrode plate 1 to a cooling plate 3 made of Al or an Al alloy with a bolt 6 is fixed at substantially the center in a vacuum vessel (not shown). The wafer 4 is placed on the substrate, and a high frequency voltage is applied while flowing the etching gas 7 toward the wafer 4 through the through-hole 5 provided in the silicon electrode plate 1 and the cooling plate 3 made of Al or Al alloy. Thus, plasma 11 is generated between the silicon electrode plate 1 and the wafer 4, and the plasma 11 hits the wafer 4 to etch the surface of the wafer 4. At this time, the heat of the silicon electrode plate 1 is radiated through the cooling plate 3.
[0003]
[Problems to be solved by the invention]
However, when plasma etching is performed on the wafer 4 using the silicon electrode plate 9 for plasma etching in which the conventional silicon electrode plate 1 is fixed to the cooling plate 3 made of Al or Al alloy with bolts 6, the plasma etching is performed during etching. As the temperature of the silicon electrode plate 1 constituting the silicon electrode plate 9 rises, a temperature difference occurs between the central portion and the peripheral portion, the etching depth of the wafer 4 varies depending on the location, and the entire wafer is not etched uniformly.
[0004]
[Means for Solving the Problems]
Therefore, the present inventors, from such a viewpoint, as a result of conducting research to develop a silicon electrode plate for plasma etching that can perform plasma etching on the entire wafer more uniformly than before,
(A) As shown in FIG. 1, a metal film 2 having better thermal conductivity than a cooling plate made of Al or Al alloy is interposed between a silicon electrode plate 1 and a cooling plate 3 made of Al or Al alloy . And the temperature rise of the silicon electrode plate 1 during plasma etching is prevented, the temperature difference generated between the central portion and the peripheral portion is reduced, and the etching depth of the wafer 4 is uniform throughout the wafer.
(B) As shown in FIG. 2, the diameter of the through-hole 15 provided in the metal film 2 having excellent thermal conductivity formed between the silicon electrode plate 1 and the cooling plate 3 made of Al or Al alloy. Is larger in diameter than the through-hole 5 provided in the silicon electrode plate 1 and the through-hole 5 ′ provided in the cooling plate 3 made of Al or Al alloy. Thus, the metal film having excellent thermal conductivity is separated from the through-hole, and further, the through-hole 5 provided in the silicon electrode plate 1 and the through-hole 5 provided in the cooling plate 3 made of Al or Al alloy. It is preferable that the through-holes 15 provided in the metal film 2 having excellent heat conductivity are concentric and prevent the wafer from being contaminated by ions of the metal film.
(C) The inventors have found that the metal film 2 having excellent thermal conductivity is preferably made of Cu, Ag, Au, or an alloy thereof .
[0005]
This invention has been made based on such knowledge,
(1) In a silicon electrode plate for plasma etching in which a silicon electrode plate having through-holes is fixed to a cooling plate made of Al or Al alloy having through-holes with a bolt, the silicon electrode plate is made of Al or Al alloy. From Cu, Ag, Au, or an alloy thereof having high thermal conductivity having a through-hole larger than any of the through-holes provided in the silicon electrode plate and the through-holes provided in the cooling plate between the cooling plates. A silicon electrode plate for plasma etching with heat dissipation , wherein the silicon electrode plate, the cooling plate, and the metal film with high thermal conductivity are fixed with bolts so that each through-hole in the metal film having high thermal conductivity is concentric. , Has characteristics.
[0006]
The silicon electrode plate for plasma etching according to the present invention has a heat conduction in which a through-hole is provided between a silicon electrode plate in which a through-hole is provided and a cooling plate made of Al or an Al alloy in which the through-hole is provided. The metal film made of Cu, Ag, Au, or an alloy thereof having excellent properties may be sandwiched and fixed with bolts, but as shown in FIG. 3, there is no through pore on one side of the silicon electrode plate 1 in advance. A metal film 2 made of Cu, Ag, Au or an alloy thereof is formed by screen printing and paste baking on the portion, and this is formed on a silicon electrode plate having a metal film made of Cu, Ag, Au or an alloy thereof . A cooling plate made of Al or an Al alloy may be stacked on the surface, and the silicon electrode plate and the cooling plate may be fixed with bolts.
[0007]
Therefore, the present invention
(2) From the diameter of the through-hole provided in the silicon electrode plate on the surface of the silicon electrode plate having the through-hole and the through-hole provided in the cooling plate made of Cu, Ag, Au, or an alloy thereof. A silicon electrode plate coated with a metal film made of Cu, Ag, Au or an alloy thereof having a large thermal conductivity and having a through-hole formed concentrically with the through-hole of the silicon electrode plate, and this heat A heat-radiating plasma formed by fixing a cooling plate made of Al or an Al alloy having through-holes with a bolt to a silicon electrode plate so as to sandwich a metal film made of Cu, Ag, Au or an alloy thereof having high conductivity. The silicon electrode plate for etching has a feature.
[0008]
The silicon electrode plate for plasma etching according to the present invention will be described in more detail with reference to the drawings.
[0009]
FIG. 1 is a sectional view of a silicon electrode plate for plasma etching according to the present invention. In FIG. 1, 1 is a silicon electrode plate, 2 is a metal film made of Cu, Ag, Au, or an alloy thereof having high thermal conductivity, Reference numeral 3 denotes a cooling plate made of Al or an Al alloy having a flange 10. FIG. 2 is an enlarged cross-sectional view of a through-hole portion of the silicon electrode plate for plasma etching according to the present invention. In FIG. 2, 1 is a silicon electrode plate, 2 is Cu, Ag, Au, or high thermal conductivity. Metal films made of these alloys , 3 is a cooling plate made of Al or an Al alloy , 5 is a through-hole provided in the silicon electrode plate 1, and 5 'is a through-hole formed in the cooling plate made of Al or Al alloy. Holes 15 are through-holes provided in the metal film.
[0010]
As shown in FIG. 2, the diameter of the through-hole 15 provided in the metal film 2 made of Cu, Ag, Au, or an alloy thereof of the silicon electrode plate for plasma etching according to the present invention is set in the silicon electrode plate 1. The diameter of the through-hole 5 is larger than any of the diameters of the through-hole 5 'and the through-hole 5' provided in the cooling plate 3 made of Al or Al alloy , and Cu, Ag, Au Alternatively, the metal film 2 made of these alloys does not protrude from the through-holes 5 provided in the silicon electrode plate 1 and the through-holes 5 ′ provided in the cooling plate 3 made of Al or Al alloy . The reason is that if the metal film 2 made of Cu, Ag, Au, or an alloy thereof protrudes into the through pores 5 and 5 ', ions of the metal film 2 may be carried by the etching gas and the wafer may be contaminated. Because. The metal film 2 preferably has a thickness in the range of 100 to 200 μm.
[0011]
DETAILED DESCRIPTION OF THE INVENTION
Example 1
A silicon electrode plate having a diameter of 280 mm, a thickness of 5 mm, and a through-hole with a diameter of 0.5 mm,
An Al cooling plate having a diameter: 280 mm, a thickness: 27 mm, and a flange portion provided with through-holes having a diameter of 1 mm,
Pure Cu film having dimensions of diameter: 250 mm, thickness: 0.1 mm, and having through-holes with a diameter of 3 mm,
Was prepared, the pure Cu film sandwiched between silicon electrode plate and the Al-made cooling plates pure Cu film, bolted 6 such that the through pores provided in the silicon electrode plate and Al made cooling plate becomes concentric Thus, a silicon electrode plate for plasma etching of the present invention (hereinafter referred to as the present electrode) 1 having the structure shown in FIG. 1 was produced.
[0012]
The electrode 1 of the present invention is set in a plasma etching apparatus, plasma is generated for 40 seconds under the conditions of frequency: 13.5 MHz, output: 800 W, plasma generation gas: Ar gas, The temperature of the part was measured, and the results are shown in Table 1.
[0013]
Example 2
A pure Ag film having a diameter of 250 mm and a thickness of 0.1 mm and provided with through-holes having a diameter of 3 mm was prepared, and this pure Ag film was used in place of the pure Cu film of Example 1. The electrode 2 of the present invention was produced in the same manner as in Example 1, plasma was generated for 40 seconds under the same conditions as in Example 1, and the temperature at the center and the periphery of the electrode 2 of the present invention were measured. Are shown in Table 1.
[0014]
Conventional Example 1
The electrode plate prepared in Example 1 and an Al cooling plate are connected with bolts to produce a conventional plasma etching electrode (hereinafter referred to as a conventional electrode) 1 and using this conventional electrode under the same conditions as in Example 1. Plasma was generated for 40 seconds, and the temperature of the central portion and the peripheral portion of the conventional electrode 1 were measured. The results are shown in Table 1.
[0015]
[Table 1]
[0016]
【The invention's effect】
From the results shown in Table 1, the case where the plasma was generated by charging for 40 seconds using the electrode 1 of the present invention with the pure Cu film and the electrode 2 of the present invention with the pure Ag film sandwiched the metal film. When the plasma was generated by charging for 40 seconds using the conventional electrode 1 that was not used, the plasma was generated by charging for 40 seconds under the same conditions. While the temperature rises to 225 ° C., the center temperature of the present invention electrode 1 rises only to 88 ° C., and the present invention electrode 2 rises only to the center temperature of 78 ° C. From the fact that the temperature difference between the central portion and the peripheral portion of the electrode 2 of the present invention is much smaller than the temperature difference of the conventional electrode 1, it can be seen that the etching uniformity of the wafer is further improved.
[0017]
In this example, a silicon electrode plate made of single crystal silicon was used, but the same result was obtained for a silicon electrode plate made of polycrystalline silicon.
[0018]
As described above, according to the silicon electrode plate for plasma etching of the present invention, the wafer can be etched more uniformly than before, the generation of defective products of the semiconductor integrated circuit can be greatly reduced, and the development of the semiconductor device industry can be achieved. It can contribute greatly.
[Brief description of the drawings]
FIG. 1 is a partial cross-sectional explanatory view for explaining a silicon electrode plate for plasma etching having heat dissipation properties according to the present invention.
FIG. 2 is a partial cross-sectional explanatory view of a through-hole portion of a silicon electrode plate for plasma etching having heat dissipation according to the present invention.
FIG. 3 is a cross-sectional explanatory view of a silicon electrode plate in which a metal film having high thermal conductivity is formed in advance on the surface of the silicon electrode plate.
FIG. 4 is an explanatory diagram for explaining a use state of a conventional silicon electrode plate for plasma etching.
[Explanation of symbols]
DESCRIPTION OF SYMBOLS 1 Silicon electrode plate 2 Metal film which consists of Cu, Ag, Au, or these alloys 3 Cooling plate which consists of Al or Al alloy 4 Wafer 5 Through-hole 5 'Through-hole 15 Through-hole 6 Bolt 7 Etching gas 8 Base 9 Silicon electrode plate for plasma etching 10 11 11 Plasma

Claims (2)

  1. In a silicon electrode plate for plasma etching formed by fixing a silicon electrode plate having through holes to a cooling plate made of Al or Al alloy having through holes with a bolt,
    The large through-pores than either the diameter of the through pores provided in the cooling plate to the cooling plates made of silicon electrode plate and the Al or Al alloy consisting of through-pores and Al or Al alloy is provided on the silicon electrode plate high thermal conductivity with Cu, Ag, Au or the silicon electrode plate by interposing a metal film made of these alloys, as each of the through pores in high cooling plate and thermal conductivity metal film is concentric A silicon electrode plate for plasma etching having heat dissipation, which is fixed by a bolt .
  2. The diameter of the through-hole provided in the silicon electrode plate and the diameter of the through-hole provided in the cooling plate made of Al or Al alloy on the surface of the silicon electrode plate having the through-hole and penetrating through the silicon electrode plate A silicon electrode plate coated with a metal film made of Cu, Ag, Au, or an alloy thereof having high thermal conductivity and having through-holes concentrically formed with the pores is sandwiched between the metal film having high thermal conductivity A heat-radiating silicon electrode plate for plasma etching, characterized in that a cooling plate made of Al or an Al alloy having through-holes is fixed to a silicon electrode plate with bolts.
JP05659598A 1998-03-09 1998-03-09 Silicon electrode plate for plasma etching with heat dissipation Expired - Fee Related JP3981967B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP05659598A JP3981967B2 (en) 1998-03-09 1998-03-09 Silicon electrode plate for plasma etching with heat dissipation

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP05659598A JP3981967B2 (en) 1998-03-09 1998-03-09 Silicon electrode plate for plasma etching with heat dissipation

Publications (2)

Publication Number Publication Date
JPH11256370A JPH11256370A (en) 1999-09-21
JP3981967B2 true JP3981967B2 (en) 2007-09-26

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Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4669137B2 (en) * 2001-02-16 2011-04-13 東京エレクトロン株式会社 Dividable electrode and plasma processing apparatus using the electrode
JP4502639B2 (en) * 2003-06-19 2010-07-14 財団法人国際科学振興財団 Shower plate, plasma processing apparatus, and product manufacturing method
KR101172334B1 (en) * 2003-12-26 2012-08-14 고에키자이단호진 고쿠사이카가쿠 신고우자이단 Shower plate, plasma processing system, and process for producing product
US8789493B2 (en) * 2006-02-13 2014-07-29 Lam Research Corporation Sealed elastomer bonded Si electrodes and the like for reduced particle contamination in dielectric etch
US7854820B2 (en) 2006-10-16 2010-12-21 Lam Research Corporation Upper electrode backing member with particle reducing features
US8187413B2 (en) * 2008-03-18 2012-05-29 Lam Research Corporation Electrode assembly and plasma processing chamber utilizing thermally conductive gasket
US8075701B2 (en) * 2008-06-30 2011-12-13 Lam Research Corporation Processes for reconditioning multi-component electrodes
JP5316393B2 (en) * 2009-12-15 2013-10-16 三菱マテリアル株式会社 Electrode plate for plasma processing equipment
JP5762798B2 (en) * 2011-03-31 2015-08-12 東京エレクトロン株式会社 Ceiling electrode plate and substrate processing placement

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