JP3951639B2 - Semiconductor sealing resin composition and semiconductor device - Google Patents

Semiconductor sealing resin composition and semiconductor device Download PDF

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Publication number
JP3951639B2
JP3951639B2 JP2001192578A JP2001192578A JP3951639B2 JP 3951639 B2 JP3951639 B2 JP 3951639B2 JP 2001192578 A JP2001192578 A JP 2001192578A JP 2001192578 A JP2001192578 A JP 2001192578A JP 3951639 B2 JP3951639 B2 JP 3951639B2
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JP
Japan
Prior art keywords
semiconductor
resin composition
sealing
resin
lead frame
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2001192578A
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Japanese (ja)
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JP2003003044A (en
Inventor
博則 池田
章人 澤井
Original Assignee
松下電工株式会社
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Filing date
Publication date
Application filed by 松下電工株式会社 filed Critical 松下電工株式会社
Priority to JP2001192578A priority Critical patent/JP3951639B2/en
Publication of JP2003003044A publication Critical patent/JP2003003044A/en
Application granted granted Critical
Publication of JP3951639B2 publication Critical patent/JP3951639B2/en
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/0002Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Description

[0001]
BACKGROUND OF THE INVENTION
The present invention relates to a resin composition for encapsulating a semiconductor for encapsulating a semiconductor and a semiconductor device using the same, and more specifically, for encapsulating an electronic component such as a semiconductor device having excellent thermal conductivity. It relates to an epoxy resin composition.
[0002]
[Prior art]
Conventionally, as a sealing method for electricity, electronic parts, semiconductor devices, etc., such as diodes and transistor integrated circuits, for example, sealing methods using epoxy resin, silicone resin, etc., and hermetic sealing methods using glass, metal, ceramics, etc. In recent years, resin sealing by low-pressure transfer molding using an epoxy resin, which has improved reliability and mass production and cost merit, has become the mainstream.
[0003]
[Problems to be solved by the invention]
However, in such a sealing method using an epoxy resin, since the resin is sealed with an adhesive force to the metal, the adhesive strength may be weak depending on the type of metal used in the lead frame. In semiconductor devices in the field of power devices such as ICs and power transistors, Ni lead frames are often used. However, the adhesive strength of conventionally used resin to Ni is very weak, and peeling between the resin and the lead frame is difficult. It is a problem that the yield decreases in terms of withstand voltage.
[0004]
This invention is made | formed in view of said point, and it aims at providing the resin composition for semiconductor sealing which can improve adhesive strength with a lead frame, and can improve adhesiveness, and a semiconductor device. Is.
[0005]
[Means for Solving the Problems]
The resin composition for semiconductor encapsulation according to claim 1 of the present invention is characterized by containing an epoxy resin, its curing agent and a nickel complex.
[0006]
The nickel complex includes the following (1) .
[0007]
[Chemical 2]
[0008]
The resin composition for encapsulating a semiconductor according to claim 2 of the present invention is characterized in that, in addition to the configuration of claim 1, the content of the nickel complex is 0.05 to 1.0% by mass. To do.
[0009]
A semiconductor device according to claim 3 of the present invention is characterized in that a semiconductor is sealed with the resin composition for semiconductor sealing according to claim 1 or 2 .
[0010]
DETAILED DESCRIPTION OF THE INVENTION
Embodiments of the present invention will be described below.
[0011]
As the epoxy resin, those conventionally used for sealing molding of semiconductor devices can be used, for example, o-cresol novolac type epoxy resin, dicyclopentadiene type epoxy resin, bisphenol type epoxy resin, bromine containing Examples thereof include an epoxy resin and an epoxy resin having a naphthalene ring. In the present invention, these epoxy resins can be used alone or in combination.
[0012]
As the curing agent for the epoxy resin, those conventionally used for sealing molding of semiconductor devices can be used. For example, phenol aralkyl, phenol novolac, cresol novolak, curing agent having a terpene skeleton, dicyclo skeleton Various polyhydric phenol compounds or naphthol compounds such as a curing agent having naphthol and naphthol aralkyl can be used. In the present invention, these curing agents can be used alone or in combination.
[0013]
As the nickel complex, [2,2′-thiobis (4-tert-octylphenolate)]-2-ethylhexylamie nickel (II) represented by the structural formula (1) can be used.
[0014]
In the present invention, in addition to the above components, a mold release agent, a coupling agent, a curing aid, and an inorganic filler can be blended as necessary. As the release agent, carnauba wax, polyethylene wax, stearic acid, montanic acid, carboxyl group-containing polyolefin and the like can be used alone or in combination. As the coupling agent, γ-glycidoxypropyltrimethoxysilane, γ-mercaptopropylmethoxysilane and the like can be used alone or in combination. As the curing aid, organic phosphines such as triphenylphosphine, tertiary amines such as diazabicycloundecene, imidazoles such as 2-methylimidazole, etc. can be used alone or in combination. . As the inorganic filler, silica, alumina, silicon nitride or the like can be used alone or in combination. In addition, a flame retardant, a coloring agent, a silicone flexible agent, etc. can also be mix | blended.
[0015]
The resin composition for encapsulating a semiconductor of the present invention comprises the above epoxy resin, a curing agent, a nickel complex, an inorganic filler and other components, and after uniformly mixing with a mixer or a blender, the kneader or roll It can be obtained by heating and kneading, then solidifying by cooling, and pulverizing into powder.
[0016]
The mixing ratio of the epoxy resin and the curing agent is an equivalent ratio, and is set so that epoxy resin / curing agent = 0.5 to 1.5, preferably epoxy resin / curing agent = 0.8 to 1.2. Is preferred. If the blending ratio of the epoxy resin and the curing agent deviates from this range, the curing may be insufficient and cracks may occur in the sealing resin (package). Moreover, it is preferable that the compounding quantity of a nickel complex shall be 0.05-1.0 mass% with respect to the whole quantity of the resin composition for semiconductor sealing of this invention. If the blending amount of the nickel complex is less than 0.05% by mass with respect to the total amount of the resin composition for semiconductor encapsulation, the adhesion of the resin composition for semiconductor encapsulation of the present invention to the lead frame can be improved. If the blending amount of the nickel complex exceeds 1.0% by mass with respect to the total amount of the semiconductor sealing resin composition, the adhesion to the lead frame may be slightly reduced. Moreover, the compounding quantity of an inorganic filler can be set to 60-93 mass% with respect to the whole quantity of the resin composition for semiconductor sealing of this invention. Other components can be blended in appropriate amounts as necessary.
[0017]
The semiconductor device of the present invention can be formed by sealing a semiconductor (chip) mounted on a lead frame or the like with the above resin composition for semiconductor sealing. As the molding method, transfer molding or the like can be used. The molding conditions can be set to, for example, a temperature of 160 to 200 ° C., an injection speed of 5 to 30 seconds, an injection pressure of 6.9 to 14.7 MPa, and a cure time of 60 to 300 seconds. It can be set as appropriate according to the composition of the resin composition, the size of the semiconductor device, and the like.
[0018]
And in this invention, since it contains a nickel complex thing, the adhesive strength of sealing resin and a lead frame can be raised, and adhesiveness can be improved. This is because in the nickel complex, there is a surplus of hands trying to coordinate bond to nickel, or the hands that have been coordinated are removed, and the bond is re-coordinated with nickel on the surface of the lead frame. It is thought that adhesion improves.
[0019]
【Example】
Hereinafter, the present invention will be described specifically by way of examples.
[0020]
(Examples 1-4 and comparative examples)
Each component is blended in the blending amounts shown in Table 1, mixed for 30 minutes with a blender, homogenized, kneaded and melted with a kneader heated to 80 ° C, extruded, cooled, and then ground to a predetermined particle size with a grinder. Thus, a powdery resin composition for encapsulating a semiconductor was obtained.
[0021]
The adhesive strength was measured using this semiconductor sealing resin composition. The adhesive strength was measured by preparing a lead frame from a Ni-plated copper plate of 25 × 25 × 05 mm, forming the pudding mold products of Examples 1 to 4 and the comparative example on the surface of the lead frame at 175 ° C., and then shearing direction. The load until the pudding mold product and the lead frame were peeled off was measured.
[0022]
Moreover, the adhesiveness in an actual semiconductor device was evaluated using the resin composition for semiconductor encapsulation. This adhesion evaluation is performed by forming a TOP-3D type semiconductor device (package) by transfer molding using a lead frame made of the same Ni-plated copper plate as described above, and peeling the back surface of the molded semiconductor device. The swelling was confirmed visually. The molding conditions were 175 ° C. molding, injection time 10 to 15 seconds, injection pressure 7 MPa, and curing time 100 seconds. In addition, this adhesive evaluation was performed with 10 samples and represented by the number of occurrences of backside separation / 10. The results are shown in Table 1.
[0023]
[Table 1]
[0024]
As is clear from Table 1, Examples 1 to 4 had higher adhesion (adhesion) strength than the comparative example, and the backside peeling was less in Examples 1 to 4 than in the comparative example. In particular, in Examples 2 and 3 in which the nickel complex was 0.05 to 1.0% by mass, peeling of the back surface did not occur at all, and the adhesiveness was high.
[0025]
【The invention's effect】
As described above, since the invention of claim 1 of the present invention contains an epoxy resin, its curing agent and a nickel complex, the semiconductor mounted on the metal lead frame is sealed with this semiconductor sealing resin composition. By stopping, the adhesive strength between the lead frame and the sealing resin can be increased and the adhesion can be improved.
[0026]
Further, since the nickel-containing complex of (1) above, by sealing the mounted semiconductor to metal lead frames in this resin composition for semiconductor encapsulation, the lead frame and the sealing resin The adhesive strength can be increased and the adhesion can be improved.
[0027]
In the invention of claim 2 of the present invention, since the content of the nickel complex is 0.05 to 1.0% by mass, the adhesive strength between the lead frame and the sealing resin is increased to ensure adhesion. It can be improved.
[0028]
According to the third aspect of the present invention, since the semiconductor is sealed with the resin composition for semiconductor sealing according to the first or second aspect, the adhesive strength between the lead frame and the sealing resin is increased to improve the adhesion. It can be made to.

Claims (3)

  1. A resin composition for encapsulating a semiconductor comprising an epoxy resin, a curing agent thereof, and a nickel complex, comprising the following (1) as a nickel complex: object.
  2. The resin composition for semiconductor encapsulation according to claim 1, wherein the content of the nickel complex is 0.05 to 1.0% by mass .
  3. A semiconductor device comprising a semiconductor encapsulated with the semiconductor encapsulating resin composition according to claim 1 .
JP2001192578A 2001-06-26 2001-06-26 Semiconductor sealing resin composition and semiconductor device Expired - Fee Related JP3951639B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2001192578A JP3951639B2 (en) 2001-06-26 2001-06-26 Semiconductor sealing resin composition and semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2001192578A JP3951639B2 (en) 2001-06-26 2001-06-26 Semiconductor sealing resin composition and semiconductor device

Publications (2)

Publication Number Publication Date
JP2003003044A JP2003003044A (en) 2003-01-08
JP3951639B2 true JP3951639B2 (en) 2007-08-01

Family

ID=19031012

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2001192578A Expired - Fee Related JP3951639B2 (en) 2001-06-26 2001-06-26 Semiconductor sealing resin composition and semiconductor device

Country Status (1)

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JP (1) JP3951639B2 (en)

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6137789B2 (en) * 1981-03-18 1986-08-26 Tokyo Shibaura Electric Co
JPS6137788B2 (en) * 1981-03-18 1986-08-26 Tokyo Shibaura Electric Co
JPH03281539A (en) * 1989-03-31 1991-12-12 Toshiba Corp Organometallic resin composition, organometallic polymer, epoxy resin composition and resin-sealing type semiconductor device
JPH09328668A (en) * 1996-06-10 1997-12-22 Sekisui Chem Co Ltd Cold-curable resin composition, cold-curing type adhesive, reactive hot-melt type adhesive and cold-curing type tacky agent
JPH1017645A (en) * 1996-07-04 1998-01-20 Toray Ind Inc Epoxy resin composition and semiconductor device
JP2001185661A (en) * 1999-12-27 2001-07-06 Hitachi Chem Co Ltd Sealing epoxy resin molding material and electronic component device

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