JP3950532B2 - 露光方法及び露光装置 - Google Patents

露光方法及び露光装置 Download PDF

Info

Publication number
JP3950532B2
JP3950532B2 JP32223197A JP32223197A JP3950532B2 JP 3950532 B2 JP3950532 B2 JP 3950532B2 JP 32223197 A JP32223197 A JP 32223197A JP 32223197 A JP32223197 A JP 32223197A JP 3950532 B2 JP3950532 B2 JP 3950532B2
Authority
JP
Japan
Prior art keywords
mask
pattern
exposure
substrate
evanescent light
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP32223197A
Other languages
English (en)
Japanese (ja)
Other versions
JPH11145051A (ja
JPH11145051A5 (https=
Inventor
亮 黒田
康弘 島田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Priority to JP32223197A priority Critical patent/JP3950532B2/ja
Priority to US09/184,655 priority patent/US6171730B1/en
Publication of JPH11145051A publication Critical patent/JPH11145051A/ja
Publication of JPH11145051A5 publication Critical patent/JPH11145051A5/ja
Application granted granted Critical
Publication of JP3950532B2 publication Critical patent/JP3950532B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Images

Classifications

    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216Mask projection systems
    • G03F7/7035Proximity or contact printers
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216Mask projection systems
    • G03F7/70325Resolution enhancement techniques not otherwise provided for, e.g. darkfield imaging, interfering beams, spatial frequency multiplication, nearfield lenses or solid immersion lenses

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
JP32223197A 1997-11-07 1997-11-07 露光方法及び露光装置 Expired - Fee Related JP3950532B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP32223197A JP3950532B2 (ja) 1997-11-07 1997-11-07 露光方法及び露光装置
US09/184,655 US6171730B1 (en) 1997-11-07 1998-11-03 Exposure method and exposure apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP32223197A JP3950532B2 (ja) 1997-11-07 1997-11-07 露光方法及び露光装置

Publications (3)

Publication Number Publication Date
JPH11145051A JPH11145051A (ja) 1999-05-28
JPH11145051A5 JPH11145051A5 (https=) 2005-04-14
JP3950532B2 true JP3950532B2 (ja) 2007-08-01

Family

ID=18141400

Family Applications (1)

Application Number Title Priority Date Filing Date
JP32223197A Expired - Fee Related JP3950532B2 (ja) 1997-11-07 1997-11-07 露光方法及び露光装置

Country Status (1)

Country Link
JP (1) JP3950532B2 (https=)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001135566A (ja) * 1999-11-08 2001-05-18 Canon Inc 微細パターン作製方法
JP2001308002A (ja) 2000-02-15 2001-11-02 Canon Inc フォトマスクを用いたパターン作製方法、及びパターン作製装置
JP2002246307A (ja) 2000-12-12 2002-08-30 Canon Inc 露光装置及び露光方法
JP3605041B2 (ja) 2001-01-26 2004-12-22 キヤノン株式会社 露光方法及び装置、デバイス製造方法、並びに、デバイス
JP2003066600A (ja) 2001-06-12 2003-03-05 Canon Inc フォトレジスト、これを用いた基板の加工方法、及びフォトレジストの製造方法
JP3894550B2 (ja) 2002-06-14 2007-03-22 キヤノン株式会社 近接場露光マスクの製造方法
JP4266661B2 (ja) 2003-02-20 2009-05-20 キヤノン株式会社 近接場露光用フォトマスク
JP4572406B2 (ja) * 2004-04-16 2010-11-04 独立行政法人理化学研究所 リソグラフィーマスク
KR101090481B1 (ko) 2005-03-30 2011-12-08 엘지전자 주식회사 평판 디스플레이의 노광장치
WO2006132425A1 (en) 2005-06-08 2006-12-14 Canon Kabushiki Kaisha Near-field exposure mask, method of producing that mask, near-field exposure apparatus having that mask, and resist pattern forming method
JP4834453B2 (ja) * 2006-04-27 2011-12-14 キヤノン株式会社 近接場露光用マスクの圧力制御方法及びその圧力制御装置

Also Published As

Publication number Publication date
JPH11145051A (ja) 1999-05-28

Similar Documents

Publication Publication Date Title
JP4346701B2 (ja) エバネッセント光を用いた露光方法
US6171730B1 (en) Exposure method and exposure apparatus
KR100827741B1 (ko) 임프린트 리소그래피 공정을 위한 자동 유체 분배 방법 및시스템
EP1942374B1 (en) Imprint method for producing structure
JP4514754B2 (ja) 毛管作用によるインプリント技術
US6900881B2 (en) Step and repeat imprint lithography systems
US7473518B2 (en) Method of manufacturing a device using a near-field photomask and near-field light
US6908861B2 (en) Method for imprint lithography using an electric field
US20090207398A1 (en) Near Field Exposure That Reduces Scatter of a Surface Plasmon Polariton Wave Going Around a Light Blocking Member
KR20050024324A (ko) 압인 리소그래피 프로세스 및 시스템
JP3950532B2 (ja) 露光方法及び露光装置
Burgin et al. Large area submicrometer contact printing using a contact aligner
JP2005520220A (ja) 電界を使用して光硬化可能な組成物内にナノスケール・パターンを作製するための方法およびシステム
JP4323616B2 (ja) エバネッセント光露光マスク及びエバネッセント光露光装置
JP3950538B2 (ja) エバネッセント光露光装置及びエバネッセント光露光方法
JP3984935B2 (ja) 近接場露光マスク及び近接場露光マスクの製造方法
JP2003332196A (ja) マスク、レジスト及び露光方法
JP2000321756A (ja) エバネッセント光露光用マスク、エバネッセント光露光装置、デバイスの製造方法および前記エバネッセント光露光用マスクの製造方法
JPH11265056A (ja) エバネッセント光露光用マスク、その製造方法およびその製造装置
KR20050025545A (ko) 전기장을 사용하여 광 중합 화합물내에 나노스케일의패턴을 생성하기 위한 방법 및 시스템

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20040603

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20040603

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20060221

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20070123

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20070323

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20070417

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20070423

R150 Certificate of patent or registration of utility model

Free format text: JAPANESE INTERMEDIATE CODE: R150

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20110427

Year of fee payment: 4

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20130427

Year of fee payment: 6

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20130427

Year of fee payment: 6

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20140427

Year of fee payment: 7

LAPS Cancellation because of no payment of annual fees