JP3876167B2 - 洗浄方法および半導体装置の製造方法 - Google Patents

洗浄方法および半導体装置の製造方法 Download PDF

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Publication number
JP3876167B2
JP3876167B2 JP2002035387A JP2002035387A JP3876167B2 JP 3876167 B2 JP3876167 B2 JP 3876167B2 JP 2002035387 A JP2002035387 A JP 2002035387A JP 2002035387 A JP2002035387 A JP 2002035387A JP 3876167 B2 JP3876167 B2 JP 3876167B2
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Japan
Prior art keywords
cleaning
ultrasonic
electrode
plasma
cavitation
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Expired - Fee Related
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JP2002035387A
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English (en)
Japanese (ja)
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JP2003243358A5 (https=
JP2003243358A (ja
Inventor
克典 鈴木
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Kawasaki Microelectronics Inc
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Kawasaki Microelectronics Inc
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Application filed by Kawasaki Microelectronics Inc filed Critical Kawasaki Microelectronics Inc
Priority to JP2002035387A priority Critical patent/JP3876167B2/ja
Priority to US10/361,570 priority patent/US6897161B2/en
Publication of JP2003243358A publication Critical patent/JP2003243358A/ja
Publication of JP2003243358A5 publication Critical patent/JP2003243358A5/ja
Application granted granted Critical
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0406—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H10P72/0411—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H10P72/0416—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing with the semiconductor substrates being dipped in baths or vessels
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
    • B08B3/04—Cleaning involving contact with liquid
    • B08B3/10—Cleaning involving contact with liquid with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration
    • B08B3/12—Cleaning involving contact with liquid with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration by sonic or ultrasonic vibrations
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C23C16/4407—Cleaning of reactor or reactor parts by using wet or mechanical methods
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0406—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like

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  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
JP2002035387A 2002-02-13 2002-02-13 洗浄方法および半導体装置の製造方法 Expired - Fee Related JP3876167B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2002035387A JP3876167B2 (ja) 2002-02-13 2002-02-13 洗浄方法および半導体装置の製造方法
US10/361,570 US6897161B2 (en) 2002-02-13 2003-02-11 Method of cleaning component in plasma processing chamber and method of producing semiconductor devices

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2002035387A JP3876167B2 (ja) 2002-02-13 2002-02-13 洗浄方法および半導体装置の製造方法

Publications (3)

Publication Number Publication Date
JP2003243358A JP2003243358A (ja) 2003-08-29
JP2003243358A5 JP2003243358A5 (https=) 2005-08-18
JP3876167B2 true JP3876167B2 (ja) 2007-01-31

Family

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Family Applications (1)

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JP2002035387A Expired - Fee Related JP3876167B2 (ja) 2002-02-13 2002-02-13 洗浄方法および半導体装置の製造方法

Country Status (2)

Country Link
US (1) US6897161B2 (https=)
JP (1) JP3876167B2 (https=)

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JP2017528598A (ja) * 2014-08-28 2017-09-28 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ マスク、キャリア、及び堆積ツールの構成要素から堆積材料を取り除くための剥脱プロセス
US9939501B2 (en) 2014-11-12 2018-04-10 The Board Of Trustees Of The Leland Stanford Junior University Iterative minimization procedure with uncompressed local SAR estimate
DE102015106343A1 (de) * 2015-04-24 2016-10-27 Weber Ultrasonics Gmbh Vorrichtung und Verfahren zum Entgraten von Bauteilen mittels Ultraschall
US20170213705A1 (en) * 2016-01-27 2017-07-27 Applied Materials, Inc. Slit valve gate coating and methods for cleaning slit valve gates
JP6893018B2 (ja) * 2016-11-14 2021-06-23 株式会社キーレックス 超音波接合装置
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DE102019205737A1 (de) * 2019-04-18 2020-10-22 Glatt Gesellschaft Mit Beschränkter Haftung Verfahren zur Überwachung eines Düsenmundstücks auf Ablagerungen an einer Düse
KR102482464B1 (ko) * 2021-05-28 2022-12-28 주식회사 비이아이랩 원자층 증착장치
CN113421950B (zh) * 2021-06-21 2023-04-28 安徽华晟新能源科技有限公司 太阳能电池片的制造方法
JP2023180400A (ja) * 2022-06-09 2023-12-21 株式会社ディスコ バリ除去装置及び切削装置

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US6897161B2 (en) 2005-05-24
JP2003243358A (ja) 2003-08-29
US20030150476A1 (en) 2003-08-14

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