JP3874003B2 - 配線パターン形成方法、及び膜パターン形成方法 - Google Patents
配線パターン形成方法、及び膜パターン形成方法 Download PDFInfo
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Classifications
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
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- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/288—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition
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- H—ELECTRICITY
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
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- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
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- H01L27/1259—Multistep manufacturing methods
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- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
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- H05K3/10—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
- H05K3/12—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using thick film techniques, e.g. printing techniques to apply the conductive material or similar techniques for applying conductive paste or ink patterns
- H05K3/1258—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using thick film techniques, e.g. printing techniques to apply the conductive material or similar techniques for applying conductive paste or ink patterns by using a substrate provided with a shape pattern, e.g. grooves, banks, resist pattern
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- H05K3/10—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
- H05K3/12—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using thick film techniques, e.g. printing techniques to apply the conductive material or similar techniques for applying conductive paste or ink patterns
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Description
課題2)同様に、配線膜504がバンクBの角部にはみ出したはみ出し部506は、拡散防止膜512では覆うことができず、配線材料が絶縁膜510などに拡散することがある。
課題3)段差部分で絶縁膜510が薄くなった膜薄部511では、絶縁膜510の絶縁機能が充分でない場合がある。そのため、図19(e)に示すように、絶縁膜510の上に他の配線膜515や半導体装置の導体層が形成されると、膜薄部511の部分で、配線膜504が配線膜515や半導体装置の導体層とショートするなどの不具合が発生する可能性が高くなる。
課題4)図19(e)に示すように、配線膜504がバンクBの角部にはみ出したはみ出し部506が存在すると共に、段差部分で絶縁膜510が薄くなった膜薄部511が存在すると、はみ出し部506と膜薄部511とは段差部分の近傍で互いに近接して存在する。これにより、配線膜504が、はみ出し部506を介して配線膜515や半導体装置の導体層とショートするなどの不具合が発生する可能性がより高くなる。
配線材料が絶縁膜などに拡散すると、絶縁膜などの機能に変化が生じ、絶縁膜などの性能や配線膜や絶縁膜を含む半導体装置の性能などを損なうことがあり、配線材料が絶縁膜などに拡散することは、重大な課題である。
前記バンクの高さと、前記第1の配線パターンと前記拡散防止層とが積層された前記配線パターンの厚さとを略同一になるように前記バンクの一部を削除するステップと、を有することを特徴とする。
本実施形態では、液滴吐出法により液滴吐出ヘッドの吐出ノズルから導電性微粒子を含む配線パターン(配線膜)形成用インク(機能液)を液滴状に吐出し、基板上に配線パターンを形成する場合の例を用いて説明する。
(1)本実施形態の配線パターンの形成方法では、バンクBの形成材料として、無機質の材料が用いられる。無機樹脂は熱に強いため、耐熱性に優れたバンクを形成することができる。さらに、バンクBと、ガラスで形成された基板Pと、の間の熱膨張率の差が小さくなる。バンクBが耐熱性に優れると共に、基板Pとの間の熱膨張率の差が小さことにより、バンクB、B間の溝部34に回路配線膜33を形成するための中間乾燥工程や焼成工程において、バンクに影響を及ぼすことなく、バンクが高温環境に曝されることを必要とする処理を実施することができる。また、バンクBの上に薄膜などを形成する工程においても、バンクBが高温環境に曝されることを必要とする処理を実施することができる。
次に、本発明に係る配線パターン形成方法の第2の実施形態について説明する。本実施形態で使用する液滴吐出法や液滴吐出装置や、製造する半導体装置などは、第1の実施形態における液滴吐出法や液滴吐出装置や半導体装置と、基本的に同一である。第1の実施形態とは異なる配線パターンの形成方法について説明する。
(1)第1ハーフエッチング工程において、バンクBをハーフエッチングすることにより、バンクB上にはみ出したはみ出し部74や、バンクB上に残った配線材料の残渣76を除去することから、次の工程で回路配線膜73の上に形成する拡散防止膜77で覆われない配線材料を殆ど無くすことができる。これにより、配線材料が、バンクB及び拡散防止膜77を覆うように形成される絶縁膜28に拡散することを抑制することができる。即ち、配線材料が絶縁膜28に拡散することに起因するTFT30の性能劣化を抑制することができる。
次に、本発明に係る電気光学装置の一例である液晶表示装置について説明する。本実施形態の液晶表示装置は、第1の実施形態及び第2の実施形態で説明した配線パターン形成方法を用いて形成された配線パターンを有するTFTを備えた液晶表示装置である。
(1)配線パターンが、絶縁膜28によって隔てられているソース配線16などの他の薄膜層に接触して、ショートなどが発生することを抑制することができるため、ショートなどの不具合が発生する可能性が小さく、故に、信頼性が高いTFT30を備えるため、ショートなどの不具合が発生する可能性が小さく、故に、信頼性が高い液晶表示装置100を実現することができる。
次に、本発明に係る電子機器について説明する。本実施形態の電子機器液晶表示装置は、第3の実施形態で説明した液晶表示装置を備えた電子機器である。本実施形態の電子機器の具体例について説明する。
(1)ショートなどの不具合が発生する可能性が小さく、故に、信頼性が高い液晶表示装置100を備えるため、ショートなどの不具合が発生する可能性が小さく、信頼性が高い携帯電話600や、情報処理装置700や、時計800を実現することができる。
Claims (6)
- 基板上の所定の領域に、液滴吐出法を用いて配線パターンを形成する方法であって、
前記基板上の前記所定の領域を囲むようにバンクを形成するステップと、
前記バンクで囲まれた領域に第1の機能液を吐出し、前記第1の機能液を乾燥させて、第1の配線パターンを形成し、前記バンク上に付着した前記第1の機能液の残渣を前記バンクの一部とともに取り除くステップと、
前記第1の配線パターン上に、第2の機能液を吐出し、前記第2の機能液を乾燥させて、第2の配線パターンを形成するステップと、
前記バンクの高さと、前記第1の配線パターンと前記第2の配線パターンとが積層された前記配線パターンの厚さとを略同一になるように前記バンクの一部を削除するステップと、を有することを特徴とする配線パターン形成方法。 - 基板上の所定の領域に、液滴吐出法を用いて配線パターンを形成する方法であって、
前記基板上の前記所定の領域を囲むようにバンクを形成するステップと、
前記バンクで囲まれた領域に第1の配線パターンの材料を含む第1の機能液を吐出し、前記第1の機能液を乾燥させて、第1の配線パターンを形成するステップと、
前記バンクの厚さが前記第1の配線パターンの厚さより大きくなるように前記バンクの一部及び前記第1の配線パターンの一部を削除し、前記バンク上に付着した前記第1の機能液の残渣を取り除くステップと、
前記第1の配線パターン上に第2の機能液を吐出し、前記第2の機能液を乾燥させて、前記材料が拡散することを防止する拡散防止層を形成するステップと、
前記バンクの高さと、前記第1の配線パターンと前記拡散防止層とが積層された前記配線パターンの厚さとを略同一になるように前記バンクの一部を削除するステップと、を有することを特徴とする配線パターン形成方法。 - 基板上の所定の領域に、液滴吐出法を用いて配線パターンを形成する方法であって、
前記基板上の前記所定の領域を囲むようにバンクを形成するステップと、
前記バンクで囲まれた領域に第1の配線パターンの材料を含む第1の機能液を吐出し、前記第1の機能液を乾燥させて、第1の配線パターンを形成するステップと、
前記第1の配線パターンを形成するステップを複数回行った後に、前記バンクの厚さが前記第1の配線パターンの厚さより大きくなるように前記バンクの一部及び前記第1の配線パターンの一部を削除し、前記バンク上に付着した前記第1の機能液の残渣を取り除くステップと、
前記第1の配線パターン上に第2の機能液を吐出し、前記第2の機能液を乾燥させて、前記材料が拡散することを防止する拡散防止層を形成するステップと、
前記バンクの高さと、前記第1の配線パターンと前記拡散防止層とが積層された前記配線パターンの厚さとを略同一になるように前記バンクの一部を削除するステップと、を有することを特徴とする配線パターン形成方法。 - 前記バンクの一部を除去する方法はハーフエッチングで行うことを特徴とする、請求項1乃至3のいずれか1項に記載の配線パターン形成方法。
- 前記バンクを形成する材料は無機樹脂である、請求項1乃至4のいずれか1項に記載の配線パターン形成方法。
- 基板上の所定の領域に、液滴吐出法を用いて膜パターンを形成する方法であって、
前記基板上の前記所定の領域を囲むようにバンクを形成するステップと、
前記バンクで囲まれた領域に第1の機能液を吐出し、前記第1の機能液を乾燥させて、第1の膜パターンを形成し、前記バンク上に付着した前記第1の機能液の残渣を前記バンクの一部とともに取り除くステップと、
前記第1の膜パターン上に、第2の機能液を吐出し、前記第2の機能液を乾燥させて、第2の膜パターンを形成するステップと、
前記バンクの高さと、前記第1の膜パターンと前記第2の膜パターンとが積層された前記膜パターンの厚さとを略同一になるように前記バンクの一部を削除するステップと、を有することを特徴とする膜パターン形成方法。
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JP2004311854A JP3874003B2 (ja) | 2004-10-27 | 2004-10-27 | 配線パターン形成方法、及び膜パターン形成方法 |
KR1020050091072A KR100703020B1 (ko) | 2004-10-27 | 2005-09-29 | 배선 패턴의 형성 방법, 막 패턴 형성 방법, 반도체 장치,전기 광학 장치 및 전자 기기 |
US11/242,009 US7622385B2 (en) | 2004-10-27 | 2005-10-04 | Wiring pattern forming method, film pattern forming method, semiconductor device, electro-optical device, and electronic equipment |
CNA2005101084293A CN1770959A (zh) | 2004-10-27 | 2005-10-09 | 布线图案及膜图案形成方法、半导体装置、电光学装置及电子机器 |
TW094136771A TWI303852B (en) | 2004-10-27 | 2005-10-20 | Wiring pattern forming method, and film pattern forming method |
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JP2009076529A (ja) * | 2007-09-19 | 2009-04-09 | Seiko Epson Corp | パターン形成方法、配線基板及び電子機器 |
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US20140010952A1 (en) * | 2012-01-02 | 2014-01-09 | Noam ROSENSTEIN | Pcb repair of defective interconnects by deposition of conductive ink |
US20140097003A1 (en) * | 2012-10-05 | 2014-04-10 | Tyco Electronics Amp Gmbh | Electrical components and methods and systems of manufacturing electrical components |
JP6085578B2 (ja) * | 2014-03-11 | 2017-02-22 | 住友重機械工業株式会社 | 膜形成方法及び膜形成装置 |
JP6295324B2 (ja) * | 2014-06-18 | 2018-03-14 | 株式会社日立製作所 | リチウムイオン電池およびその製造方法 |
US10114071B2 (en) | 2016-04-26 | 2018-10-30 | International Business Machines Corporation | Testing mechanism for a proximity fail probability of defects across integrated chips |
DE102019106546A1 (de) * | 2019-03-14 | 2020-09-17 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Verfahren zur herstellung von optoelektronischen halbleiterbauteilen und optoelektronisches halbleiterbauteil |
Family Cites Families (22)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH02132831A (ja) | 1988-11-14 | 1990-05-22 | Casio Comput Co Ltd | 配線形成基板面の平坦化方法 |
JPH056942A (ja) | 1990-10-31 | 1993-01-14 | Matsushita Electric Ind Co Ltd | 半導体装置の製造方法 |
US5329695A (en) * | 1992-09-01 | 1994-07-19 | Rogers Corporation | Method of manufacturing a multilayer circuit board |
JP3453803B2 (ja) * | 1993-06-15 | 2003-10-06 | 株式会社日立製作所 | 電子回路基板の配線修正方法およびその装置 |
JPH08250590A (ja) | 1995-03-14 | 1996-09-27 | Sony Corp | スタックドコンタクトの形成方法 |
US5587342A (en) * | 1995-04-03 | 1996-12-24 | Motorola, Inc. | Method of forming an electrical interconnect |
DE69629864T2 (de) * | 1995-04-03 | 2004-07-15 | Canon K.K. | Verfahren zur Herstellung einer elektronenemittierende Vorrichtung, einer Elektronenquelle und eines Bilderzeugungsgerätes |
JP3228181B2 (ja) | 1997-05-12 | 2001-11-12 | ヤマハ株式会社 | 平坦配線形成法 |
JPH1195024A (ja) * | 1997-09-22 | 1999-04-09 | Asahi Glass Co Ltd | カラーフィルタ付き基板の製造方法及びそれを用いた液晶表示素子 |
CN1293784C (zh) | 1998-03-17 | 2007-01-03 | 精工爱普生株式会社 | 薄膜构图衬底、薄膜形成方法和薄膜元件 |
JP4741045B2 (ja) | 1998-03-25 | 2011-08-03 | セイコーエプソン株式会社 | 電気回路、その製造方法および電気回路製造装置 |
AU2015901A (en) * | 1999-12-21 | 2001-07-03 | Plastic Logic Limited | Inkjet-fabricated integrated circuits |
JP4682475B2 (ja) * | 2001-08-01 | 2011-05-11 | 凸版印刷株式会社 | 表示装置用カラーフィルタの製造方法 |
JP2003139935A (ja) * | 2001-11-02 | 2003-05-14 | Toppan Printing Co Ltd | 平面表示装置用多色画素構成物 |
JP2003273111A (ja) | 2002-03-14 | 2003-09-26 | Seiko Epson Corp | 成膜方法及びその方法を用いて製造したデバイス、並びにデバイスの製造方法 |
JP2003317945A (ja) | 2002-04-19 | 2003-11-07 | Seiko Epson Corp | デバイスの製造方法、デバイス、及び電子機器 |
JP2004122120A (ja) * | 2002-09-11 | 2004-04-22 | Seiko Epson Corp | 液滴吐出装置及び方法、成膜装置及び成膜方法、デバイス製造方法、並びに電子機器 |
JP3849676B2 (ja) * | 2002-10-01 | 2006-11-22 | セイコーエプソン株式会社 | 液滴吐出装置、電気光学装置の製造方法、電気光学装置、および電子機器 |
WO2005084163A2 (en) * | 2003-08-08 | 2005-09-15 | University Of Delaware | Method for creating flip-chip conductive polymer bumps using photolithography and polishing |
US7202155B2 (en) * | 2003-08-15 | 2007-04-10 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing wiring and method for manufacturing semiconductor device |
JP4689159B2 (ja) * | 2003-10-28 | 2011-05-25 | 株式会社半導体エネルギー研究所 | 液滴吐出システム |
US8796583B2 (en) * | 2004-09-17 | 2014-08-05 | Eastman Kodak Company | Method of forming a structured surface using ablatable radiation sensitive material |
-
2004
- 2004-10-27 JP JP2004311854A patent/JP3874003B2/ja active Active
-
2005
- 2005-09-29 KR KR1020050091072A patent/KR100703020B1/ko active IP Right Grant
- 2005-10-04 US US11/242,009 patent/US7622385B2/en active Active
- 2005-10-09 CN CNA2005101084293A patent/CN1770959A/zh active Pending
- 2005-10-20 TW TW094136771A patent/TWI303852B/zh not_active IP Right Cessation
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CN1770959A (zh) | 2006-05-10 |
JP2006128239A (ja) | 2006-05-18 |
KR20060051818A (ko) | 2006-05-19 |
KR100703020B1 (ko) | 2007-04-06 |
TWI303852B (en) | 2008-12-01 |
US7622385B2 (en) | 2009-11-24 |
TW200629430A (en) | 2006-08-16 |
US20060088998A1 (en) | 2006-04-27 |
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