JP3871736B2 - 液晶表示装置及び撮影装置及び情報処理装置 - Google Patents
液晶表示装置及び撮影装置及び情報処理装置 Download PDFInfo
- Publication number
- JP3871736B2 JP3871736B2 JP18563596A JP18563596A JP3871736B2 JP 3871736 B2 JP3871736 B2 JP 3871736B2 JP 18563596 A JP18563596 A JP 18563596A JP 18563596 A JP18563596 A JP 18563596A JP 3871736 B2 JP3871736 B2 JP 3871736B2
- Authority
- JP
- Japan
- Prior art keywords
- liquid crystal
- crystal display
- resin layer
- display device
- active matrix
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000004973 liquid crystal related substance Substances 0.000 title claims description 38
- 230000010365 information processing Effects 0.000 title claims description 10
- 230000002093 peripheral effect Effects 0.000 claims description 57
- 239000011347 resin Substances 0.000 claims description 40
- 229920005989 resin Polymers 0.000 claims description 40
- 239000011159 matrix material Substances 0.000 claims description 36
- 239000003566 sealing material Substances 0.000 claims description 32
- 239000000758 substrate Substances 0.000 claims description 26
- 125000006850 spacer group Chemical group 0.000 claims description 24
- 239000000463 material Substances 0.000 claims description 11
- 239000003990 capacitor Substances 0.000 claims description 6
- 239000004642 Polyimide Substances 0.000 claims description 4
- 229920001721 polyimide Polymers 0.000 claims description 4
- 238000003384 imaging method Methods 0.000 claims description 3
- 239000010408 film Substances 0.000 description 60
- 239000010410 layer Substances 0.000 description 24
- 239000010409 thin film Substances 0.000 description 19
- 239000011229 interlayer Substances 0.000 description 12
- 239000010407 anodic oxide Substances 0.000 description 10
- 239000012535 impurity Substances 0.000 description 10
- 150000002500 ions Chemical class 0.000 description 10
- 229910052782 aluminium Inorganic materials 0.000 description 8
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 8
- 238000004519 manufacturing process Methods 0.000 description 8
- 238000000034 method Methods 0.000 description 7
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 6
- 239000011521 glass Substances 0.000 description 6
- 238000010586 diagram Methods 0.000 description 5
- 239000008151 electrolyte solution Substances 0.000 description 5
- 230000003647 oxidation Effects 0.000 description 5
- 238000007254 oxidation reaction Methods 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 4
- 230000007547 defect Effects 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- MUBZPKHOEPUJKR-UHFFFAOYSA-N Oxalic acid Chemical compound OC(=O)C(O)=O MUBZPKHOEPUJKR-UHFFFAOYSA-N 0.000 description 3
- 229910021419 crystalline silicon Inorganic materials 0.000 description 3
- 239000000945 filler Substances 0.000 description 3
- 230000010354 integration Effects 0.000 description 3
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 3
- 229910052814 silicon oxide Inorganic materials 0.000 description 3
- 239000000243 solution Substances 0.000 description 3
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- FEWJPZIEWOKRBE-UHFFFAOYSA-N Tartaric acid Natural products [H+].[H+].[O-]C(=O)C(O)C(O)C([O-])=O FEWJPZIEWOKRBE-UHFFFAOYSA-N 0.000 description 2
- 235000011114 ammonium hydroxide Nutrition 0.000 description 2
- 229910021417 amorphous silicon Inorganic materials 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 238000004528 spin coating Methods 0.000 description 2
- 235000002906 tartaric acid Nutrition 0.000 description 2
- 239000011975 tartaric acid Substances 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- QGZKDVFQNNGYKY-UHFFFAOYSA-N ammonia Natural products N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 1
- 238000002048 anodisation reaction Methods 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000010849 ion bombardment Methods 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 235000006408 oxalic acid Nutrition 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 229910052706 scandium Inorganic materials 0.000 description 1
- SIXSYDAISGFNSX-UHFFFAOYSA-N scandium atom Chemical compound [Sc] SIXSYDAISGFNSX-UHFFFAOYSA-N 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
Images
Landscapes
- Liquid Crystal (AREA)
- Thin Film Transistor (AREA)
Priority Applications (15)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP18563596A JP3871736B2 (ja) | 1996-06-25 | 1996-06-25 | 液晶表示装置及び撮影装置及び情報処理装置 |
| US08/879,583 US6288764B1 (en) | 1996-06-25 | 1997-06-20 | Display device or electronic device having liquid crystal display panel |
| KR1019970030136A KR100550810B1 (ko) | 1996-06-25 | 1997-06-25 | 구동회로일체형의 액티브매트릭스구조를 갖는 액정패널을 구비한 액정디스플레이 장치 및 전자장치 |
| US09/912,092 US6404479B2 (en) | 1996-06-25 | 2001-07-23 | Active matrix lcd comprising a sealing layer with a region overlapping an insulating film formed over another insulating film, and a region where said insulating film is not formed over said another insulating film |
| KR1020020014260A KR100559761B1 (ko) | 1996-06-25 | 2002-03-16 | 액정 디스플레이 장치를 갖는 전자 장치 |
| US10/143,331 US6577372B2 (en) | 1996-06-25 | 2002-05-09 | Electronic device having liquid crystal display device |
| US10/458,648 US7333160B2 (en) | 1996-06-25 | 2003-06-09 | Display device including resin film |
| US10/752,526 US7215402B2 (en) | 1996-06-25 | 2004-01-08 | Electronic device having liquid crystal display device |
| KR1020040088005A KR100536423B1 (ko) | 1996-06-25 | 2004-11-01 | 디스플레이 장치 |
| KR1020040088003A KR100558594B1 (ko) | 1996-06-25 | 2004-11-01 | 전자 장치 |
| KR1020040088004A KR100542968B1 (ko) | 1996-06-25 | 2004-11-01 | 디스플레이 장치 |
| US11/538,899 US7474376B2 (en) | 1996-06-25 | 2006-10-05 | Display device |
| US12/241,705 US8665409B2 (en) | 1996-06-25 | 2008-09-30 | Display device with sealing material |
| US13/343,011 US8643820B2 (en) | 1996-06-25 | 2012-01-04 | Electronic device having liquid crystal display device |
| US14/153,780 US9507213B2 (en) | 1996-06-25 | 2014-01-13 | Electronic device having liquid crystal display device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP18563596A JP3871736B2 (ja) | 1996-06-25 | 1996-06-25 | 液晶表示装置及び撮影装置及び情報処理装置 |
Related Child Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2006001934A Division JP3872093B2 (ja) | 2006-01-07 | 2006-01-07 | 表示装置、撮影装置、及び情報処理装置 |
| JP2006001933A Division JP3892472B2 (ja) | 2006-01-07 | 2006-01-07 | 表示装置、撮影装置、及び情報処理装置 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JPH1010544A JPH1010544A (ja) | 1998-01-16 |
| JPH1010544A5 JPH1010544A5 (enrdf_load_stackoverflow) | 2004-07-15 |
| JP3871736B2 true JP3871736B2 (ja) | 2007-01-24 |
Family
ID=16174230
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP18563596A Expired - Lifetime JP3871736B2 (ja) | 1996-06-25 | 1996-06-25 | 液晶表示装置及び撮影装置及び情報処理装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3871736B2 (enrdf_load_stackoverflow) |
Families Citing this family (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6011607A (en) | 1995-02-15 | 2000-01-04 | Semiconductor Energy Laboratory Co., | Active matrix display with sealing material |
| JPH09171192A (ja) * | 1995-12-19 | 1997-06-30 | Semiconductor Energy Lab Co Ltd | アクティブマトリクス型液晶表示装置及びその製造方 法 |
| US6433944B1 (en) | 1998-09-25 | 2002-08-13 | Fuji Photo Film Co., Ltd. | Master carrier for magnetic transfer and method for transfer |
| JP2000310784A (ja) * | 1999-02-22 | 2000-11-07 | Matsushita Electric Ind Co Ltd | 液晶パネル、カラーフィルター及びそれらの製造方法 |
| US6680487B1 (en) * | 1999-05-14 | 2004-01-20 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor comprising a TFT provided on a substrate having an insulating surface and method of fabricating the same |
| TW459275B (en) | 1999-07-06 | 2001-10-11 | Semiconductor Energy Lab | Semiconductor device and method of fabricating the same |
| US7411211B1 (en) * | 1999-07-22 | 2008-08-12 | Semiconductor Energy Laboratory Co., Ltd. | Contact structure and semiconductor device |
| US6646287B1 (en) | 1999-11-19 | 2003-11-11 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device with tapered gate and insulating film |
| JP4801249B2 (ja) * | 1999-11-19 | 2011-10-26 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| US8125601B2 (en) | 2003-01-08 | 2012-02-28 | Samsung Electronics Co., Ltd. | Upper substrate and liquid crystal display device having the same |
| KR101023972B1 (ko) | 2003-10-20 | 2011-03-28 | 삼성전자주식회사 | 상부기판 및 이를 갖는 액정표시장치 |
| WO2007007689A1 (ja) * | 2005-07-11 | 2007-01-18 | Sharp Kabushiki Kaisha | 液晶表示装置およびその製造方法 |
| JP2012255840A (ja) | 2011-06-07 | 2012-12-27 | Japan Display West Co Ltd | 表示装置および電子機器 |
| JP6006930B2 (ja) * | 2011-11-22 | 2016-10-12 | 株式会社ジャパンディスプレイ | 薄膜トランジスタ回路基板、及びその製造方法 |
-
1996
- 1996-06-25 JP JP18563596A patent/JP3871736B2/ja not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPH1010544A (ja) | 1998-01-16 |
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