JP3864259B2 - 基板接合c4ハンダ・ボールの疲労寿命の延長 - Google Patents
基板接合c4ハンダ・ボールの疲労寿命の延長 Download PDFInfo
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- JP3864259B2 JP3864259B2 JP2003507882A JP2003507882A JP3864259B2 JP 3864259 B2 JP3864259 B2 JP 3864259B2 JP 2003507882 A JP2003507882 A JP 2003507882A JP 2003507882 A JP2003507882 A JP 2003507882A JP 3864259 B2 JP3864259 B2 JP 3864259B2
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- 229910000679 solder Inorganic materials 0.000 title claims description 97
- 239000000758 substrate Substances 0.000 claims description 66
- 239000004065 semiconductor Substances 0.000 claims description 44
- 238000000034 method Methods 0.000 claims description 30
- 239000000463 material Substances 0.000 claims description 18
- LQBJWKCYZGMFEV-UHFFFAOYSA-N lead tin Chemical compound [Sn].[Pb] LQBJWKCYZGMFEV-UHFFFAOYSA-N 0.000 claims description 10
- 239000004593 Epoxy Substances 0.000 claims description 5
- 229910001128 Sn alloy Inorganic materials 0.000 claims description 4
- 229920001343 polytetrafluoroethylene Polymers 0.000 claims description 4
- 239000004810 polytetrafluoroethylene Substances 0.000 claims description 4
- 239000004642 Polyimide Substances 0.000 claims description 3
- 230000008878 coupling Effects 0.000 claims description 3
- 238000010168 coupling process Methods 0.000 claims description 3
- 238000005859 coupling reaction Methods 0.000 claims description 3
- 239000011368 organic material Substances 0.000 claims description 3
- 229920001721 polyimide Polymers 0.000 claims description 3
- -1 polytetrafluoroethylene Polymers 0.000 claims description 3
- 230000008646 thermal stress Effects 0.000 description 11
- 230000008018 melting Effects 0.000 description 7
- 238000002844 melting Methods 0.000 description 7
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 5
- 230000007547 defect Effects 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 229910045601 alloy Inorganic materials 0.000 description 3
- 239000000956 alloy Substances 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 238000005382 thermal cycling Methods 0.000 description 3
- 230000007423 decrease Effects 0.000 description 2
- 230000005496 eutectics Effects 0.000 description 2
- 238000009661 fatigue test Methods 0.000 description 2
- 230000002411 adverse Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000006023 eutectic alloy Substances 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 230000005484 gravity Effects 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 229910000753 refractory alloy Inorganic materials 0.000 description 1
- 238000004088 simulation Methods 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
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- H01L2224/13099—Material
- H01L2224/131—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
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Description
第1の導電性パッドをその上に有する半導体基板;
第2の導電性パッドをその上に有する有機基板;
を備え、第1のパッドの表面積は第2のパッドの表面積より大きく、さらに
第1のパッドを第2のパッドに電気的に結合するハンダ部材;
を備えるエレクトロニクス構造体(electronic structure)を提供する。
第1の導電性パッドをその上に有する半導体基板;
第2の導電性パッドをその上に有する有機基板;および
第1のパッドを第2のパッドに電気的に結合するハンダ部材;
を備え、ハンダ部材の中心線から、半導体基板の最も近い横端部までの距離が少なくとも約0.25mmであるエレクトロニクス構造体を提供する。
第1の導電性パッドをその上に有する半導体基板を形成すること;
第2の導電性パッドをその上に有する有機基板を形成すること;
を含み、第1のパッドの表面積は第2のパッドの表面積より大きく、さらに
ハンダ部材の使用により、第1のパッドを第2のパッドに電気的に結合すること;
を含むエレクトロニクス構造体を形成する方法を提供する。
第1の導電性パッドをその上に有する半導体基板を形成すること;
第2の導電性パッドをその上に有する有機基板を形成すること;および
ハンダ部材の使用により、第1のパッドを第2のパッドに電気的に結合すること;
を含み、ハンダ部材の中心線から、半導体基板の最も近い横端部までの距離が少なくとも約0.25mmであるエレクトロニクス構造体を形成する方法を提供する。
Claims (18)
- 第1の導電性パッドをその上に有する半導体基板と、
第2の導電性パッドをその上に有する有機基板と、
前記第1のパッドを前記第2のパッドに電気的に結合するハンダ部材と
を備え、
前記ハンダ部材の一部が前記半導体基板に直接接触し、
前記第1のパッドの表面積が前記第2のパッドの表面積より大きいことを特徴とするエレクトロニクス構造体。 - 前記ハンダ部材の中心線から、前記半導体基板の最も近い横端部までの距離が少なくとも0.25mmである請求項1に記載のエレクトロニクス構造体。
- 前記半導体基板と前記有機基板の間のアンダーフィル材をさらに備え、前記アンダーフィル材が前記ハンダ部材を包み込み、また前記アンダーフィル材の弾性率が少なくとも1GPaである請求項1または2のいずれか一項に記載のエレクトロニクス構造体。
- 前記有機基板の熱膨張係数(CTE)が10ppm/℃と18ppm/℃の間である請求項1または2のいずれか一項に記載のエレクトロニクス構造体。
- CSOLDERを前記ハンダ部材のCTE、CORGANICを前記有機基板のCTE、CSEMIを前記半導体基板のCTEとして、Pを、(CSOLDER−CORGANIC)/(CSOLDER−CSEMI)として定義すると、Pが0.15と0.75の間である請求項1または2のいずれか一項に記載のエレクトロニクス構造体。
- 前記有機基板が、エポキシ、ポリイミド、ポリテトラフルオロエチレン、およびこれらの組合せからなる群から選択される有機材料を含む請求項1または2のいずれか一項に記載のエレクトロニクス構造体。
- 前記ハンダ部材が、controlled collapse chip connection(C4)ハンダ・ボールを含む請求項1または2のいずれか一項に記載のエレクトロニクス構造体。
- 前記ハンダ部材が鉛−スズ合金を含む請求項1または2のいずれか一項に記載のエレクトロニクス構造体。
- 前記有機基板において、前記第1のパッドの表面積が、1.1と1.3倍の間または、1.3と2.0倍の間だけ前記第2のパッドの表面積より大きく、ハンダ部材が前記第1のパッドを前記第2のパッドに電気的に結合する請求項1に記載のエレクトロニクス構造体。
- 第1の導電性パッドをその上に有する半導体基板を形成することと、
第2の導電性パッドをその上に有する有機基板を形成することと、
ハンダ部材の使用により、前記第1のパッドを前記第2のパッドに電気的に結合することとを含み、
前記ハンダ部材の一部が前記半導体基板に直接接触し、
前記第1のパッドの表面積が前記第2のパッドの表面積より大きいことを特徴とするエレクトロニクス構造体を形成する方法。 - 前記ハンダ部材の中心線から、前記半導体基板の最も近い横端部までの距離が少なくとも0.25mmである請求項10に記載の方法。
- 前記半導体基板と前記有機基板の間にアンダーフィル材を入れ、前記アンダーフィル材の弾性率が少なくとも1GPaである請求項10または11のいずれか一項に記載の方法。
- 前記有機基板の熱膨張係数(CTE)が10ppm/℃と18ppm/℃の間である請求項10または11のいずれか一項に記載の方法。
- CSOLDERを前記ハンダ部材のCTE、CORGANICを前記有機基板のCTE、CSEMIを前記半導体基板のCTEとして、Pを、(CSOLDER−CORGANIC)/(CSOLDER−CSEMI)として定義すると、Pが0.15と0.75の間である請求項10または11のいずれか一項に記載の方法。
- 前記有機基板が、エポキシ、ポリイミド、ポリテトラフルオロエチレン、およびこれらの組合せからなる群から選択される有機材料を含む請求項10または11のいずれか一項に記載の方法。
- 前記ハンダ部材が、C4ハンダ・ボールを含む請求項10または11のいずれか一項に記載の方法。
- 前記ハンダ部材が鉛−スズ合金を含む請求項10または11のいずれか一項に記載の方法。
- 前記形成ステップにおいて、前記第1のパッドの表面積が、1.1と1.3倍の間または、1.3と2.0倍の間だけ前記第2のパッドの表面積より大きい請求項10に記載の方法。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US09/885,853 US7067916B2 (en) | 2001-06-20 | 2001-06-20 | Extension of fatigue life for C4 solder ball to chip connection |
PCT/EP2002/006922 WO2003001585A1 (en) | 2001-06-20 | 2002-06-04 | Extension of fatigue life for c4 solder ball in a chip to substrate connection |
Publications (2)
Publication Number | Publication Date |
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JP2004531080A JP2004531080A (ja) | 2004-10-07 |
JP3864259B2 true JP3864259B2 (ja) | 2006-12-27 |
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JP2003507882A Expired - Fee Related JP3864259B2 (ja) | 2001-06-20 | 2002-06-04 | 基板接合c4ハンダ・ボールの疲労寿命の延長 |
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US (2) | US7067916B2 (ja) |
JP (1) | JP3864259B2 (ja) |
KR (1) | KR100576029B1 (ja) |
CN (1) | CN1275305C (ja) |
TW (1) | TW567595B (ja) |
WO (1) | WO2003001585A1 (ja) |
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US7235886B1 (en) * | 2001-12-21 | 2007-06-26 | Intel Corporation | Chip-join process to reduce elongation mismatch between the adherents and semiconductor package made thereby |
US20030116860A1 (en) * | 2001-12-21 | 2003-06-26 | Biju Chandran | Semiconductor package with low resistance package-to-die interconnect scheme for reduced die stresses |
US7488896B2 (en) * | 2004-11-04 | 2009-02-10 | Ngk Spark Plug Co., Ltd. | Wiring board with semiconductor component |
DE102005009358B4 (de) * | 2005-03-01 | 2021-02-04 | Snaptrack, Inc. | Lötfähiger Kontakt und ein Verfahren zur Herstellung |
US7352061B2 (en) * | 2005-05-20 | 2008-04-01 | Intel Corporation | Flexible core for enhancement of package interconnect reliability |
EP2750194A1 (en) * | 2005-06-22 | 2014-07-02 | Seoul Viosys Co., Ltd. | Light emitting device comprising a plurality of light emitting diode cells |
US7170159B1 (en) * | 2005-07-07 | 2007-01-30 | Taiwan Semiconductor Manufacturing Company, Ltd. | Low CTE substrates for use with low-k flip-chip package devices |
DE102005056569B4 (de) * | 2005-11-25 | 2008-01-10 | Qimonda Ag | Zwischenverbindung für Flip-Chip in Package Aufbauten |
DE112006002927B4 (de) | 2006-01-09 | 2010-06-02 | Seoul Opto Device Co. Ltd., Ansan | Licht emittierende Diode mit ITO-Schicht und Verfahren zur Herstellung einer solchen |
KR20100076083A (ko) | 2008-12-17 | 2010-07-06 | 서울반도체 주식회사 | 복수개의 발광셀들을 갖는 발광 다이오드 및 그것을 제조하는 방법 |
JP5263053B2 (ja) * | 2009-07-24 | 2013-08-14 | 株式会社村田製作所 | 半導体パッケージおよび半導体パッケージモジュール |
US9070851B2 (en) | 2010-09-24 | 2015-06-30 | Seoul Semiconductor Co., Ltd. | Wafer-level light emitting diode package and method of fabricating the same |
CN205944139U (zh) | 2016-03-30 | 2017-02-08 | 首尔伟傲世有限公司 | 紫外线发光二极管封装件以及包含此的发光二极管模块 |
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-
2001
- 2001-06-20 US US09/885,853 patent/US7067916B2/en not_active Expired - Lifetime
-
2002
- 2002-06-04 KR KR1020037015055A patent/KR100576029B1/ko not_active IP Right Cessation
- 2002-06-04 WO PCT/EP2002/006922 patent/WO2003001585A1/en active Application Filing
- 2002-06-04 JP JP2003507882A patent/JP3864259B2/ja not_active Expired - Fee Related
- 2002-06-04 CN CNB028123417A patent/CN1275305C/zh not_active Expired - Lifetime
- 2002-06-11 TW TW091112657A patent/TW567595B/zh not_active IP Right Cessation
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CN1518763A (zh) | 2004-08-04 |
US7119003B2 (en) | 2006-10-10 |
CN1275305C (zh) | 2006-09-13 |
TW567595B (en) | 2003-12-21 |
US20050224973A1 (en) | 2005-10-13 |
US20020195707A1 (en) | 2002-12-26 |
JP2004531080A (ja) | 2004-10-07 |
KR20040010650A (ko) | 2004-01-31 |
KR100576029B1 (ko) | 2006-05-02 |
WO2003001585A1 (en) | 2003-01-03 |
US7067916B2 (en) | 2006-06-27 |
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