JP3857624B2 - 導電薄膜パターンの形成方法、薄膜磁気ヘッドの製造方法、薄膜インダクタの製造方法、およびマイクロデバイスの製造方法 - Google Patents
導電薄膜パターンの形成方法、薄膜磁気ヘッドの製造方法、薄膜インダクタの製造方法、およびマイクロデバイスの製造方法 Download PDFInfo
- Publication number
- JP3857624B2 JP3857624B2 JP2002211670A JP2002211670A JP3857624B2 JP 3857624 B2 JP3857624 B2 JP 3857624B2 JP 2002211670 A JP2002211670 A JP 2002211670A JP 2002211670 A JP2002211670 A JP 2002211670A JP 3857624 B2 JP3857624 B2 JP 3857624B2
- Authority
- JP
- Japan
- Prior art keywords
- thin film
- conductive layer
- pattern
- forming
- resist
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000010409 thin film Substances 0.000 title claims description 121
- 238000000034 method Methods 0.000 title claims description 81
- 238000004519 manufacturing process Methods 0.000 title claims description 35
- 239000010408 film Substances 0.000 claims description 127
- 238000007747 plating Methods 0.000 claims description 41
- 229920002120 photoresistant polymer Polymers 0.000 claims description 38
- 230000008569 process Effects 0.000 claims description 26
- 239000000758 substrate Substances 0.000 claims description 23
- 239000007788 liquid Substances 0.000 claims description 22
- 239000000463 material Substances 0.000 claims description 22
- 230000015572 biosynthetic process Effects 0.000 claims description 17
- 239000004020 conductor Substances 0.000 claims description 17
- 239000000203 mixture Substances 0.000 claims description 6
- 239000010410 layer Substances 0.000 description 248
- 239000010949 copper Substances 0.000 description 15
- 238000004544 sputter deposition Methods 0.000 description 14
- 230000005381 magnetic domain Effects 0.000 description 13
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 12
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 10
- 229910052802 copper Inorganic materials 0.000 description 10
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 8
- 238000003801 milling Methods 0.000 description 8
- 239000002356 single layer Substances 0.000 description 8
- 229910001030 Iron–nickel alloy Inorganic materials 0.000 description 7
- 239000010931 gold Substances 0.000 description 7
- 238000010438 heat treatment Methods 0.000 description 7
- 239000000696 magnetic material Substances 0.000 description 7
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 5
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 5
- 229910052737 gold Inorganic materials 0.000 description 5
- 239000011810 insulating material Substances 0.000 description 5
- 229910052697 platinum Inorganic materials 0.000 description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- 230000000052 comparative effect Effects 0.000 description 4
- 239000007789 gas Substances 0.000 description 4
- 239000003960 organic solvent Substances 0.000 description 4
- 230000001681 protective effect Effects 0.000 description 4
- 229910045601 alloy Inorganic materials 0.000 description 3
- 239000000956 alloy Substances 0.000 description 3
- 230000008859 change Effects 0.000 description 3
- 238000001035 drying Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 230000020169 heat generation Effects 0.000 description 3
- 230000005415 magnetization Effects 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 238000000059 patterning Methods 0.000 description 3
- 238000000206 photolithography Methods 0.000 description 3
- 238000001020 plasma etching Methods 0.000 description 3
- 238000004528 spin coating Methods 0.000 description 3
- 238000005406 washing Methods 0.000 description 3
- 239000004642 Polyimide Substances 0.000 description 2
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 2
- 230000009471 action Effects 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
- 229910000365 copper sulfate Inorganic materials 0.000 description 2
- ARUVKPQLZAKDPS-UHFFFAOYSA-L copper(II) sulfate Chemical compound [Cu+2].[O-][S+2]([O-])([O-])[O-] ARUVKPQLZAKDPS-UHFFFAOYSA-L 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 230000004907 flux Effects 0.000 description 2
- 239000012528 membrane Substances 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 229920001721 polyimide Polymers 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 238000000992 sputter etching Methods 0.000 description 2
- 238000003756 stirring Methods 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 238000001039 wet etching Methods 0.000 description 2
- 229910000859 α-Fe Inorganic materials 0.000 description 2
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 1
- 230000005330 Barkhausen effect Effects 0.000 description 1
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 1
- 229910001260 Pt alloy Inorganic materials 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- GUBSQCSIIDQXLB-UHFFFAOYSA-N cobalt platinum Chemical compound [Co].[Pt].[Pt].[Pt] GUBSQCSIIDQXLB-UHFFFAOYSA-N 0.000 description 1
- 230000000593 degrading effect Effects 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- UGKDIUIOSMUOAW-UHFFFAOYSA-N iron nickel Chemical compound [Fe].[Ni] UGKDIUIOSMUOAW-UHFFFAOYSA-N 0.000 description 1
- 229910001337 iron nitride Inorganic materials 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 230000005389 magnetism Effects 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 239000013557 residual solvent Substances 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 230000005641 tunneling Effects 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/127—Structure or manufacture of heads, e.g. inductive
- G11B5/31—Structure or manufacture of heads, e.g. inductive using thin films
- G11B5/3163—Fabrication methods or processes specially adapted for a particular head structure, e.g. using base layers for electroplating, using functional layers for masking, using energy or particle beams for shaping the structure or modifying the properties of the basic layers
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/0035—Multiple processes, e.g. applying a further resist layer on an already in a previously step, processed pattern or textured surface
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F17/00—Fixed inductances of the signal type
- H01F17/0006—Printed inductances
- H01F17/0013—Printed inductances with stacked layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F41/00—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties
- H01F41/02—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for manufacturing cores, coils, or magnets
- H01F41/04—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for manufacturing cores, coils, or magnets for manufacturing coils
- H01F41/041—Printed circuit coils
- H01F41/042—Printed circuit coils by thin film techniques
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F41/00—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties
- H01F41/32—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying conductive, insulating or magnetic material on a magnetic film, specially adapted for a thin magnetic film
- H01F41/34—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying conductive, insulating or magnetic material on a magnetic film, specially adapted for a thin magnetic film in patterns, e.g. by lithography
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/49002—Electrical device making
- Y10T29/4902—Electromagnet, transformer or inductor
- Y10T29/49021—Magnetic recording reproducing transducer [e.g., tape head, core, etc.]
- Y10T29/49032—Fabricating head structure or component thereof
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Magnetic Heads (AREA)
- Electroplating Methods And Accessories (AREA)
- Manufacturing Cores, Coils, And Magnets (AREA)
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2002211670A JP3857624B2 (ja) | 2002-07-19 | 2002-07-19 | 導電薄膜パターンの形成方法、薄膜磁気ヘッドの製造方法、薄膜インダクタの製造方法、およびマイクロデバイスの製造方法 |
| US10/617,131 US7018548B2 (en) | 2002-07-19 | 2003-07-11 | Conductive thin film pattern and method of forming the same, method of manufacturing thin film magnetic head, method of manufacturing thin film inductor, and method of manufacturing micro device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2002211670A JP3857624B2 (ja) | 2002-07-19 | 2002-07-19 | 導電薄膜パターンの形成方法、薄膜磁気ヘッドの製造方法、薄膜インダクタの製造方法、およびマイクロデバイスの製造方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2004052046A JP2004052046A (ja) | 2004-02-19 |
| JP2004052046A5 JP2004052046A5 (https=) | 2005-02-03 |
| JP3857624B2 true JP3857624B2 (ja) | 2006-12-13 |
Family
ID=30437595
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2002211670A Expired - Fee Related JP3857624B2 (ja) | 2002-07-19 | 2002-07-19 | 導電薄膜パターンの形成方法、薄膜磁気ヘッドの製造方法、薄膜インダクタの製造方法、およびマイクロデバイスの製造方法 |
Country Status (2)
| Country | Link |
|---|---|
| US (1) | US7018548B2 (https=) |
| JP (1) | JP3857624B2 (https=) |
Families Citing this family (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103147069A (zh) * | 2011-12-07 | 2013-06-12 | 周义才 | 金属有机物磊晶薄膜的制造方法 |
| KR101508812B1 (ko) * | 2012-05-08 | 2015-04-06 | 삼성전기주식회사 | 코일 부품 제조방법 및 코일 부품 |
| KR101709810B1 (ko) * | 2012-06-14 | 2017-03-08 | 삼성전기주식회사 | 고주파 인덕터의 제조방법 |
| KR101994726B1 (ko) * | 2013-12-18 | 2019-07-01 | 삼성전기주식회사 | 칩 전자부품 및 그 제조방법 |
| KR101762027B1 (ko) * | 2015-11-20 | 2017-07-26 | 삼성전기주식회사 | 코일 부품 및 그 제조 방법 |
| CN106094445B (zh) * | 2016-06-12 | 2018-11-20 | 中国科学院微电子研究所 | 大高宽比纳米级金属结构的制作方法 |
| CN106435675B (zh) * | 2016-11-30 | 2018-08-28 | 华侨大学 | 一种适用于分段电镀的屏蔽层取消设备及其取消方法 |
| JP2019033282A (ja) * | 2018-10-30 | 2019-02-28 | Tdk株式会社 | コイル部品およびその製造方法 |
| JP6879355B2 (ja) * | 2019-12-03 | 2021-06-02 | Tdk株式会社 | コイル部品の製造方法 |
| US12382581B2 (en) * | 2022-05-10 | 2025-08-05 | International Business Machines Corporation | Sidewall plating of circuit boards for layer transition connections |
Family Cites Families (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3853715A (en) | 1973-12-20 | 1974-12-10 | Ibm | Elimination of undercut in an anodically active metal during chemical etching |
| JPH08330736A (ja) | 1995-06-01 | 1996-12-13 | Toray Ind Inc | 多層基板およびその製造方法 |
| JPH0973608A (ja) * | 1995-09-04 | 1997-03-18 | Sanyo Electric Co Ltd | 薄膜磁気ヘッドの製造方法 |
| US6156487A (en) * | 1998-10-23 | 2000-12-05 | Matsushita-Kotobuki Electronics Industries, Ltd. | Top surface imaging technique for top pole tip width control in magnetoresistive read/write head processing |
| JP3355175B2 (ja) * | 2000-05-16 | 2002-12-09 | ティーディーケイ株式会社 | フレームめっき方法および薄膜磁気ヘッドの磁極の形成方法 |
| JP2002123910A (ja) * | 2000-10-16 | 2002-04-26 | Alps Electric Co Ltd | 薄膜磁気ヘッド及び薄膜磁気ヘッドの製造方法 |
| JP3593497B2 (ja) * | 2000-11-08 | 2004-11-24 | アルプス電気株式会社 | 薄膜磁気ヘッドの製造方法 |
| US6922316B2 (en) * | 2000-11-10 | 2005-07-26 | Tdk Corporation | Thin-film magnetic head and method of manufacturing same |
| JP2003029415A (ja) | 2001-07-06 | 2003-01-29 | Internatl Business Mach Corp <Ibm> | フォトレジスト加工方法及び段型金属体製造方法 |
| JP2003317210A (ja) * | 2002-04-25 | 2003-11-07 | Tdk Corp | パターン形成方法、マイクロデバイスの製造方法、薄膜磁気ヘッドの製造方法、磁気ヘッドスライダの製造方法、磁気ヘッド装置の製造方法、磁気記録再生装置の製造方法 |
-
2002
- 2002-07-19 JP JP2002211670A patent/JP3857624B2/ja not_active Expired - Fee Related
-
2003
- 2003-07-11 US US10/617,131 patent/US7018548B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| US20040013793A1 (en) | 2004-01-22 |
| JP2004052046A (ja) | 2004-02-19 |
| US7018548B2 (en) | 2006-03-28 |
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