JP3854822B2 - Beam processing method and apparatus, and touch panel substrate manufacturing method - Google Patents

Description

[0001]
BACKGROUND OF THE INVENTION
The present invention relates to a beam processing method and apparatus for processing an object to be processed such as resin, ceramic and metal using a pulsed energy beam such as a pulse laser beam, and a method for manufacturing a touch panel substrate.
[0002]
[Prior art]
Conventionally, as this type of beam processing method, a processing method is known in which a pulsed laser beam emitted from a YAG laser having a Q switch is used to cut or drill a workpiece that is an object to be processed. . In this beam machining method, a workpiece is set on an XY table, and each pulsed laser beam is continuously applied to the workpiece while moving the workpiece in a direction crossing the irradiation direction of the pulsed laser beam for each machining element. Irradiate to. This laser beam irradiation is performed so as to keep the pitch of the irradiation spots Ls constant so that the degree of overlap (lap ratio) between adjacent irradiation spots becomes constant.
[0003]
[Problems to be solved by the invention]
However, when processing a processing element having a predetermined length using the conventional beam processing method, since the pitch P of the irradiation spot Ls is set to a certain value, the processing portion is removed from the target region. There was a problem that it protruded or the length of the processed part was insufficient. For example, as shown in FIG. 14, a line-shaped machining element may be machined by irradiating a laser beam at a constant pitch P while relatively moving the irradiation spot Ls in the direction of the arrow in the figure. In this case, if the design length Ld of the machining element and the pitch P of the irradiation spot Ls do not correspond well, the length Lm of the machining portion to be actually machined becomes longer than the design length Ld. As a result, there was a risk that the intended processing could not be performed.
[0006]
The above problems occur in a beam processing method and apparatus using a laser beam as a pulsed energy beam, but a beam processing method using another energy beam such as an electron beam or a charged particle beam. And also in the device.
Further, the above problem is not only when the workpiece is moved with the pulsed energy beam irradiation point fixed, but also with the pulsed energy beam irradiation point being moved with the workpiece fixedly arranged. It may also occur when both the irradiation point of the pulsed energy beam and the workpiece are moved.
[0007]
  The present invention has been made under the above background. The object of the present invention is to provide a machining element on a workpiece when machining using a pulsed energy beam.Uniform processing with the target design lengthThe present invention is to provide a beam processing method and apparatus, and a method for manufacturing a touch panel substrate.
[0008]
[Means for Solving the Problems]
  In order to achieve the above object, the invention according to claim 1 is directed to the processing object and the processing object while irradiating the processing object with a pulsed energy beam repeatedly emitted from the beam source based on the processing control data. In a beam processing method of processing the object to be processed by relatively moving an irradiation point of the energy beam to an object,For each of a plurality of types of processing elements having different lengths to be processed on the processing object, the energy beam irradiation is performed so that the actual processing length of the processing element coincides with a design target length. The pitch P of the spot is calculated and obtained, and when the machining element on the workpiece is machined, the irradiation spot of the energy beam is arranged at the constant pitch P obtained by the calculation for the machining element. And control the irradiation timing of each pulsed energy beamIt is characterized by this.
  Claims4The invention includes a beam source that repeatedly emits a pulsed energy beam, a beam irradiation unit that guides and irradiates a processing object with the energy beam emitted from the beam source, the processing object, and the processing object. A beam processing apparatus comprising: a relative movement unit that relatively moves the irradiation point of the energy beam with respect to a beam; and a control unit that controls the beam source and the relative movement unit based on machining control data.For each of a plurality of types of processing elements having different lengths to be processed on the processing object, the energy beam irradiation is performed so that the actual processing length of the processing element coincides with a design target length. The pitch P of the spot is calculated and obtained, and when the machining element on the workpiece is machined, the irradiation spot of the energy beam is arranged at the constant pitch P obtained by the calculation for the machining element. In addition, an irradiation timing control means for controlling the irradiation timing of each pulsed energy beam is provided.It is characterized by this.
  Here, the “work object” includes not only a surface on which the energy beam is irradiated but also a surface on which the energy beam is irradiated is a curved surface such as a cylindrical surface. The same applies to other claims.The processing elements having a predetermined length include processing elements having a relatively large area such as a triangle and a quadrangle as well as processing elements such as straight lines and curves having a finite length.
[0009]
  Claims beam processing method and claim 14In the beam processing equipment ofFor each of a plurality of types of processing elements having different lengths to be processed on the processing object, the energy beam irradiation spot is set so that the actual processing length of the processing element matches the design target length. Is calculated and calculated. Then, when processing the processing element on the processing target, irradiation with each pulse-shaped energy beam is performed so that the irradiation spots of the energy beam are arranged at a constant pitch P obtained by the above calculation for the processing element. Control timing. thisByThe target length of the processing element is matched with the length of the part that is actually processed, and the processing element is processed uniformly.
[0022]
  Claim5The invention of claim4In each beam processing device, for each processing element based on the above processing control datathe abovepitchPPitch control data generating means for generating pitch control data for controlling the irradiation timing, and the irradiation timing control means uses the pitch control data generated by the pitch control data generation means to apply the irradiation timing of each pulsed energy beam. It is characterized by being configured to control.
[0023]
  Claim5In each beam processing apparatus, each processing element is based on the above processing control data.the abovepitchPSince the pitch control data for controlling the pitch is generated, even if the pitch control data is not included in the processing control data input to the beam processing apparatus, each pulse-shaped data is generated using the generated pitch control data. By controlling the irradiation timing of the energy beam, the pitch of the irradiation spot on the workpiece can be changed.
[0024]
  Claim2The invention of claim1'sIn the beam processing method, the beam source is a YAG laser having a Q switch.
  Claims6The invention of claim4 or 5In this beam processing apparatus, the beam source is a YAG laser having a Q switch.
[0025]
  Claim2Beam processing method and claims6In this beam processing apparatus, a stable energy beam can be obtained even when the repetition frequency for controlling the emission timing of the energy beam is changed in a relatively wide range via the Q switch. The irradiation timing can be easily controlled.
[0026]
  Claim3The invention of claim 1Or 2In this beam processing method, the object to be processed is a transparent conductive film formed on an insulating substrate, and a process of removing a part of the transparent conductive film in a slit shape is performed. .
  Claims7The invention of claim4, 5 or 6In this beam processing apparatus, the object to be processed is a transparent conductive film formed on an insulating substrate, and a part of the transparent conductive film is removed in a slit shape. .
[0027]
  Claim3Beam processing method and claims7In this beam processing apparatus, when the part of the transparent conductive film on the insulating substrate is removed in a slit shape, the speed of relative movement between the insulating substrate and the energy beam irradiation point changes. However, each irradiation spot of the energy beam in the direction of relative movement isConstant pitch P obtained by the above calculationThen, the transparent conductive film on the insulating substrate is irradiated. Thereby, the shape of the slit from which the transparent conductive film is removed by the energy beam becomes uniform.
[0028]
  Claim8The present invention is a touch panel substrate manufacturing method for manufacturing a touch panel substrate in which a transparent electrode is formed on an insulating transparent substrate, wherein a transparent conductive film is formed on the surface of the insulating transparent substrate, and3Beam processingThe lawAnd a transparent electrode is formed on the insulating transparent substrate by removing a part of the transparent conductive film on the insulating transparent substrate into a slit shape.
The invention of claim 9 is a touch panel substrate manufacturing method for manufacturing a touch panel substrate having a transparent electrode formed on an insulating transparent substrate, wherein a transparent conductive film is formed on the surface of the insulating transparent substrate, A transparent electrode is formed on the insulating transparent substrate by removing a part of the transparent conductive film on the insulating transparent substrate into a slit shape by using the beam processing apparatus according to Item 7. It is.
[0029]
  Claim8 and 9In the touch panel substrate manufacturing method, after forming a transparent conductive film on the surface of the insulating transparent substrate, a part of the transparent conductive film is removed in the form of slits with the energy beam, so that it is formed on the insulating transparent substrate. The slit shape between the transparent electrodes becomes uniform.
[0030]
DETAILED DESCRIPTION OF THE INVENTION
Hereinafter, the present invention is applied to a transparent conductive film beam processing method and apparatus for forming a transparent electrode by removing a part of a transparent conductive film formed on an insulating transparent substrate of a hybrid touch panel into a slit shape. The applied embodiment will be described.
[0031]
FIG. 2 is a schematic configuration diagram of a beam processing apparatus according to the present invention. This beam processing apparatus guides and irradiates a workpiece with a YAG laser apparatus 1 as a beam source that repeatedly emits a pulsed laser beam as a pulsed energy beam and a pulsed laser light emitted from the YAG laser apparatus 1. Beam irradiation means 2, an XY table 5 as a relative movement means for relatively moving an object to be processed and an irradiation point of the energy beam with respect to the object to be processed, and a YAG laser device 1 and an XY table 5 based on the processing control data And a control system 6 as a control means for controlling.
[0032]
The YAG laser transmission device 1 includes a laser head 101 incorporating a YAG rod 101a and a Q switch 101b, a Q switch driving unit 102 for driving the Q switch 101b, and a YAG rod 101a in the laser head 101 for driving for laser oscillation. And a laser power source 103 for supplying current. The Q switch driving unit 102 drives the Q switch 101 b in the laser head 101 based on the laser control signal sent from the control system 6. When the Q switch 101b is turned on, a pulse laser beam composed of near infrared light (wavelength λ = 1064 nm) is emitted from the laser head 101. The repetition frequency of the pulsed laser control signal input to the Q switch driving unit 102 can be changed in the range of 20 Hz to 20 kHz (cycle = 50 msec to 0.05 msec), and the pulse width of the laser control signal is It can be changed in the range of 80 to 500 nsec. By driving the Q switch 101b in the laser head 101 by the Q switch driving unit 102, the pulse laser beam can be emitted from the laser head 101 within the range of the repetition frequency of 500 Hz to 5 kHz.
[0033]
The YAG rod 101a in the laser head 101 is a YAG (yttrium, aluminum, garnet) crystal doped with rare earth element Nd (neodymium) and is excited by an excitation source (not shown) such as a flash lamp or a semiconductor laser. This excitation source is driven by a drive current supplied from the laser power source 103.
[0034]
The beam irradiation means 2 includes a step index type optical fiber 201 that guides pulse laser light, and a laser irradiation head 202 that collects the pulse laser light guided by the optical fiber 201 and irradiates the object to be processed. It is configured using.
[0035]
A transparent insulating substrate 3 made of transparent glass or transparent plastic material (for example, PET, polycarbonate) on which a transparent conductive film 4 as a processing object made of ITO (indium tin oxide) is formed is a linear motor of an XY table 5. It is fixed on a mounting table 501 driven by 502 (for example, a servo motor or a stepping motor) by a suction and mechanical clamping mechanism (not shown). The control system 6 controls a linear motor 502 that drives the mounting table 501 on which the transparent insulating substrate 3 is fixed, so that the transparent insulating substrate 3 on which the transparent conductive film 4 is formed can It can be moved two-dimensionally in an X direction and a Y direction (direction perpendicular to the paper surface in the drawing) orthogonal to each other in a virtual plane perpendicular to the irradiation direction.
[0036]
In order to further improve the processing speed, the acceleration of the XY table, and the processing accuracy, the XY table 5 may be formed of a high-strength lightweight material such as a foamed titanium alloy, a magnesium alloy, an alumina oxide ceramic, and an aluminum alloy. preferable.
[0037]
Further, a weight reduction may be achieved by forming a through hole inside the mounting table 501. This through-hole can also serve as an air flow path for a vacuum chuck when the integral body of the insulating transparent substrate 3 and the transparent conductive film 4 is a sheet.
With respect to the mounting table 501, a recess is formed at least below the portion of the insulating transparent substrate 3 that is irradiated with the pulsed laser beam, and the distance between the lower surface of the insulating transparent substrate 3 and the upper surface of the mounting table 501 is as much as possible. It is preferable to make it long. With such a configuration, it is possible to suppress the adverse effect on the processing due to the reflected laser beam that has passed through the insulating transparent substrate 3 and reflected on the surface of the mounting table 501 hitting the transparent conductive film 4.
[0038]
In the present embodiment, a linear scale 503 is attached to the XY table 5 as a moving distance detection pulse signal generation unit. The linear scale 503 is provided in each of the two directions of the X direction and the Y direction, and the moving distance is detected every time the mounting table 501 on which the transparent insulating substrate 3 is mounted moves by a certain distance in the X direction and the Y direction. Generate a pulse signal. By counting the movement distance detection pulse signal, the movement distance of the mounting table 501 on which the transparent insulating substrate 3 is mounted can be known. In the present embodiment, the irradiation timing of each pulse laser beam is controlled in synchronization with the moving distance of the mounting table 501 on which the transparent insulating substrate 3 is mounted based on the moving distance detection pulse signal.
[0039]
In the present embodiment, as the linear scale 503, a scale having a resolution of about 0.5 μm to 1.0 μm can be obtained by combining a scale on which scale grids are formed with each other and a scanning plate facing each other in a non-contact manner (for example, Heidenhain Co., Ltd. open type measuring system (trade name) is used. Here, for example, when the resolution of the linear scale 503 is 1 μm, one pulse is output every 1 μm. Therefore, when the moving speed of the mounting table 501 on which the transparent insulating substrate 3 is mounted is 1 m / sec, 1 MHz. The movement distance detection pulse signal is output at a frequency (cycle = 1 μsec).
The linear scale 503 is appropriately selected and used in accordance with conditions such as processing accuracy and processing speed. Further, the moving distance detection pulse signal generating means generates a moving distance detection pulse signal for each movement of the mounting table 501 on which the transparent insulating substrate 3 is mounted in each of the two directions of the X direction and the Y direction. What is necessary is just to produce | generate, and it is not limited to the said specific linear scale.
[0040]
The control system 6 monitors the entire beam processing apparatus and issues a control command to each unit based on CAM (Computer Aided Manufacturing) data as processing control data, a table drive control apparatus (sequencer) 602, The control circuit board 603 for synchronous interlocking operation is used.
[0041]
The CAM data is generated based on CAD (Computer Aided Design) data in consideration of the apparatus parameters of the beam processing apparatus. The apparatus parameter data, laser emission coordinate data, and pitch data are combined. Irradiation condition data and table movement coordinate data are included. The device parameter data includes, for example, acceleration and deceleration of the XY table 5, presence / absence of processing in the acceleration / deceleration area, presence / absence of automatic pitch calculation, acceleration / deceleration margin of the XY table 5, minimum processing frequency, maximum speed during processing, movement This is data on the maximum speed, irradiation power, beam diameter, thickness of the workpiece and sizes in the X and Y directions. The irradiation condition data is, for example, start point X coordinate, start point Y coordinate, end point X coordinate, end point Y coordinate, and pitch data for each processing element. The table movement coordinate data is, for example, data of the movement X coordinate and the movement Y coordinate for each processing element.
[0042]
Here, the CAM data generated by an external computer device may be input to the beam processing device, or may be generated in the host computer device 601 constituting the beam processing device. In the latter case, the host computer device 601 also functions as pitch control data generating means for generating the pitch control data for each machining element.
[0043]
The table drive control device 602 controls the drive of the linear motor 502 based on a control command sent from the host computer device 601. The table drive control unit 602 is configured using a servo controller when the linear motor 502 is a servo motor, for example, and is configured using a pulse controller when the linear motor 502 is a pulse motor.
[0044]
FIG. 1 is a block diagram showing a configuration example of the control circuit board 603. This control circuit board 603 is a pitch variable means (irradiation condition variable) that changes the pitch of the irradiation spot on the transparent conductive film 4 irradiated with the pulsed laser light in accordance with the type of processing element formed on the transparent conductive film 4. Means), in particular, functions as an irradiation timing control means for controlling the irradiation timing of the pulsed laser light based on the CAM data as the processing control data.
[0045]
The control circuit board 603 uses a CPU 603a, an I / O interface 603b, a pulse counter 603c, a comparison circuit 603d, a pulse width shaping circuit 603e, a switch circuit 603f, and a memory (RAM, ROM, etc.) not shown. It is configured.
[0046]
The I / O interface 603b performs signal processing for data communication between the CPU 603a and an external host computer device 601.
[0047]
The pulse counter 603c counts the number of pulses of the movement distance detection pulse signal Sm generated by the linear scale 503. The count value Nm by the pulse counter 603c is compared with the reference value Nref sent from the CPU 603a in the comparison circuit 603d, and when both values match, a pulse signal is output from the comparison circuit 603d. The reference value Nref can be arbitrarily set according to the processing conditions. The movement distance detection pulse signal Sm input to the pulse counter 603c is switched according to the movement direction of the mounting table 501 of the XY table 5. For example, when the mounting table 501 is moved in the X direction, it is output from the linear scale 503 for the X direction.
[0048]
The pulse width shaping circuit 603d is a circuit that widens the pulse width of the movement distance detection pulse signal Sp output from the comparison circuit 603c to a pulse width at which the Q switch can operate. By adjusting the pulse width shaping circuit 603d, the pulse width of the pulse laser beam emitted from the YAG laser apparatus 1 can be changed.
[0049]
The switch circuit 603e outputs a laser control signal output from the pulse width shaping circuit 603d to the Q switch driving unit 102 so that continuous processing and intermittent processing can be appropriately switched based on a control command from the CPU 603a. This is a circuit for on / off control.
[0050]
3 and 4 are line segment-shaped processing elements extending in the X direction having a length Lm of 6600 μm on the transparent conductive film 4 as shown in FIG. 5 as a processing example using the beam processing apparatus having the above-described configuration. It is a time chart which shows an example of the signal of each part of the above-mentioned control circuit board 603 when forming slit 4a (X). 3 and FIG. 4, the radius r of the irradiation spot of the pulse laser light irradiated on the transparent conductive film 4 is 220 μm, the pitch P of the irradiation spot is 330 μm, and the wrap ratio α of the irradiation spot is 0.25 (= 25). %), And the resolution of the linear scale 503 is 0.5 μm, and one pulse signal Sm is output every 0.5 μm.
[0051]
Here, the wrap rate α of the irradiation spot is defined by the following equation (1). FIGS. 6A and 6B show the overlapping state of irradiation spots when the wrap ratio α is 0 (0%) and 0.25 (25%), respectively.
Further, the relationship between the length Lm (see FIG. 14) of the slit (processing element) and the pitch P of the irradiation spot is expressed by the following equation (2). When Lm = 6600 μm and P = 330 μm are substituted, the slit 4a The total number n of irradiation spots necessary for forming (X) is 21.
Further, the relationship between the reference value Nref, the irradiation spot pitch P, and the pulse output interval Lp of the linear scale 503 is expressed by the following equation (3). When P = 330 μm and Lp = 0.5 μm are substituted, the reference The value Nref is 660. The moving speed of the mounting table 501 of the XY table 5 is set to 2 m / sec.
[Expression 1]
α = (2r−P) / 2r (1)
[Expression 2]
P × (n−1) = Lm (2)
[Equation 3]
Nref = P / Lp (3)
[0052]
  As shown in FIG. 3, the movement distance detection pulse signal Sm is output from the linear scale 503 at a repetition frequency f = 4 MHz (cycle = 0.25 μsec) as the mounting table 501 of the XY table 5 moves. The movement distance detection pulse signal Sm is counted by the pulse counter 603c. Each time 660 moving distance detection pulse signals Sm are counted, that is, every time the mounting table 501 moves 330 μm, a pulsed laser control signal Sp is output from the comparator 603d. Then, the width of the laser control signal Sp output from the comparator 603d is expanded by the pulse width shaper 603e to a width necessary for driving the Q switch 101b of the YAG laser transmitter 1.
  Next, as shown in FIG. 4, the laser control signal Sp ′ shaped to a predetermined pulse width is on / off controlled based on the processing control data by the switch circuit 603f controlled by the CPU 603a. The laser control signal Sp "on / off-controlled by the switch circuit 603f is input to the Q switch driving unit 102, whereby the YAG laser transmission is performed at a predetermined timing synchronized with the moving distance of the transparent insulating substrate 3. A pulse laser beam is emitted from the apparatus 1 and irradiated onto the transparent conductive film 4 on the transparent insulating substrate 3.
  Thus, the pulsed laser light controlled to synchronize with the moving distance of the transparent insulating substrate 3 fixed to the mounting table 501 of the XY table 5 is irradiated to the transparent conductive film 4 on the transparent insulating substrate 3. By the figureTo 5As shown, the irradiation spots Lp (X) of the pulsed laser light irradiated on the transparent conductive film 4 are arranged at a constant pitch in the X-axis direction. Thereby, as shown in FIG. 5, the transparent conductive film 4 is removed in a slit shape with a uniform processing width.
[0053]
In the slit processing, when the length Lm of the slit 4a (X) is changed, the value of the reference value Nref input to the comparator 603d is changed so that the processing length Lm is exactly equal to the target length. For example, when the length Lm of the slit 4a (X) is 6700 μm which is 100 μm longer than the above example, the pitch P of the irradiation spot is 335 μm according to the above equation (2), and this is substituted into the above equation (3). The reference value Nref is 670. That is, the reference value Nref may be changed from 660 to 670. Further, when the length Lm of the slit 4a (X) is 6500 μm shorter than the above example by 100 μm, the pitch P of the irradiation spot is 325 μm according to the above equation (2), and when this is substituted into the above equation (3), The reference value Nref is 650. That is, the reference value Nref may be changed from 660 to 650.
[0054]
  As described above, according to the present embodiment, since the irradiation timing of the pulse laser beam is controlled so as to be synchronized with the moving distance of the mounting table 501 of the XY table 5, the moving speed of the mounting table 501 changes for some reason. However, since the pitch of the irradiation spot of the pulsed laser light applied to the transparent conductive film 4 on the transparent insulating substrate 3 does not change, uniform slit processing with a constant processing width is possible.
  Then, by changing the reference value Nref, the length of the slit formed in the transparent conductive film 4 on the transparent insulating substrate 3 is set to the design target length.InIt can be processed to match.
[0055]
Further, since the irradiation timing of the pulse laser beam is controlled so as to be synchronized with the moving distance of the mounting table 501 of the XY table 5, the uniform slit processing can be performed also in the acceleration region and the deceleration region of the mounting table 501. . For example, in the conventional processing apparatus, an acceleration region and a deceleration region in which the mounting table is moved without performing processing before and after the slit processing are required, whereas in the present embodiment, as shown in FIG. Since the slit machining can be started from (X1 point in the figure) and can be continued to the middle of the deceleration area (X2 point in the figure), the total movement amount of the mounting table 501 can be shortened. This makes it possible to perform slit processing at a processing speed equal to or higher than that of conventional etching processing while achieving uniform slit processing of the transparent conductive film 4.
[0056]
In the above embodiment, the pitch of the irradiation spot is changed based on the processing control data so that the length of the slit that is actually processed becomes the desired length regardless of the processing length of the slit. However, the control for changing the pitch of the irradiation spot can be applied to the case where the grid-like slits are formed in the transparent conductive film 4 on the transparent insulating substrate 3 without generating an overlapping processing region.
For example, as shown in FIG. 8A, the switch circuit 603f is controlled so that the irradiation spot pitch is doubled at the position corresponding to the intersection Pc of the two slits. By this control, the irradiation of the pulsed laser beam to the intersection Pc is skipped, and the pulsed laser beam is irradiated while moving the transparent insulating substrate 3 in the X-axis direction. As shown in FIG. A slit 4a (X) having a predetermined length in the X-axis direction is formed through the gap. Next, pulse laser light is irradiated while moving the transparent insulating substrate 3 in the Y-axis direction so as to pass through the intersection Pc. As a result, as shown in FIG. 9A, the irradiation spots Lp (Y) of the pulsed laser light irradiated on the transparent conductive film 4 are arranged at a constant pitch in the Y-axis direction. As a result, as shown in FIG. 9B, the transparent conductive film 4 is also removed in a slit shape with a uniform processing width in the Y-axis direction, and the X-axis direction slit 4a (X) and the Y-axis direction slit 4a ( A grid-like slit intersecting with Y) can be formed.
In this lattice-shaped slit processing example, the pulse laser beam is irradiated only once (twice at the lap portion) at the intersection Pc as well as at other irradiation points, so that excessive laser irradiation at the intersection Pc is performed. It is possible to prevent problems such as the occurrence of damage due to. 8 and 9, the slit 4a (X) in the X-axis direction is formed while avoiding the intersecting portion Pc, and the slit 4a (Y) in the Y-axis direction is continuously formed. However, the slit 4a (X) in the X-axis direction is continuously formed, and the pitch of the irradiation spot is changed twice during the formation of the slit 4a (Y) in the Y-axis direction. The part Pc may be avoided. Further, instead of changing the pitch of the irradiation spot, the irradiation condition may be changed so as to lower the irradiation power for the intersection Pc.
[0057]
Further, the control for changing the pitch of the irradiation spot may be adopted also when forming reference marks for alignment that are optically detected and used for alignment of the substrate at the four corners of the transparent insulating substrate 3. it can. If the reference mark formed on the transparent insulating substrate 3 is processed under the same processing conditions as the slit, it is difficult to detect by the optical sensor and the substrate may not be correctly aligned. Therefore, it is possible to form the reference mark so that the processing surface is roughened by increasing the degree of processing compared to the case of the slit so that the optical contrast between the reference mark and the surrounding portion is increased. desirable.
[0058]
As a method for forming a reference mark under a processing condition stronger than that in the case of the slit, for example, a slit is formed using CAM data created based on CAD data for the slit, and then the YAG laser transmitter is manually operated. It is possible to adopt a method of changing the driving current of 1 to increase the irradiation power of the pulse laser beam and forming the reference mark using the CAM data created based on the CAD data for the reference mark.
Further, using one CAM data created based on CAD data including the slit and the reference mark, the drive current of the YAG laser transmitter 1 is automatically changed during one machining process, and the slit is applied to the slit. A method of processing the reference mark with high irradiation power by changing the processing condition (irradiation condition) and the processing condition (irradiation condition) for the reference mark may be employed.
[0059]
In particular, in the processing apparatus of the embodiment, after forming predetermined slits in the transparent conductive film 4 of the transparent insulating substrate 3, the pitch of the irradiation spots is shortened at the four corners of the transparent insulating substrate 3. A method of controlling the reference mark so as to be continuously processed is preferable. For example, the reference value Nref input to the comparator 603d is set to 660 when the slit is formed, and the reference value Nref is changed to 220 when the reference mark to be subsequently processed is formed. As a result, the slit is processed with a low wrap ratio (= 0.25), the reference mark is processed with a high wrap ratio (0.75), and the ratio of the wrap portion where the number of times of irradiation with the pulsed laser light is two times. And the contrast of the reference mark as a whole can be increased. In addition, this control requires only changing the value of the reference value Nref input to the comparator 603d without changing the irradiation power of the pulse laser beam, so that the irradiation condition of the pulse laser beam is changed manually. Unlike the case where the drive current is changed, there is no need to secure a waiting time for stabilizing the irradiation power, so that efficient processing is possible.
Instead of or in addition to the control for shortening the pitch of the irradiation spot, the number of scans of the pulse laser beam is controlled to be larger than that during normal processing when the reference mark is processed. Alternatively, the time pulse width of each pulse laser beam (the output Sp ′ of the pulse width shaping circuit in FIGS. 1 and 3) may be controlled to be longer than in normal processing.
[0060]
FIG. 10 is a cross-sectional view of a touch panel configured using a touch panel substrate on which an electrode pattern is formed by processing the transparent conductive film 4 in the beam processing apparatus. FIGS. 11A and 11B are an exploded perspective view and a plan view of the touch panel, respectively.
As shown in FIG. 10, the touch panel has a pair of upper and lower touch panel substrates 7 and 8 having a predetermined height (for example, 9 to 12 μm) spacers 9 so that the transparent electrodes made of the respective transparent conductive films 4 are not in contact with each other in a normal state. It is the structure which was made to oppose through. When the touch panel is pressed from above in FIG. 10, the upper touch panel substrate 7 is deformed as indicated by a two-dot chain line, and the transparent electrodes of the upper and lower touch panel substrates 7 and 8 are brought into contact with each other. From the change in resistance between the upper and lower transparent electrodes due to this contact, it is possible to know whether or not the pressure has been pressed and the pressed position. In addition, as shown in FIGS. 11A and 11B, in this touch panel, slits 7 a and 8 a orthogonal to each other are formed in each of the upper and lower touch panel substrates 7 and 8 in each transparent conductive film 4.
[0061]
The beam processing apparatus of this embodiment forms slits 7 a and 8 a shown in FIGS. 11A and 11B in the transparent conductive film 4. An insulating transparent substrate 3 having a transparent conductive film 4 (thickness = about 500 angstroms) formed on the surface thereof by vacuum deposition, ion plating, sputtering, or the like is placed on the mounting table 501 toward the upper side of the transparent conductive film 4 side. Set. The transparent conductive film 4 on the set insulating transparent substrate 3 is moved in one direction by the XY table 5 while being irradiated with pulsed laser light with a predetermined spot diameter. In the course of this movement, a portion irradiated with pulsed laser light having a width of about 500 to 1000 [μm] is evaporated and removed from the transparent conductive film 4 to form slits 7a and 8a that insulate each electrode region.
[0062]
In the beam processing apparatus of the present embodiment, a plurality of transparent electrodes can be formed on the insulating transparent substrate 3 by processing the transparent conductive film 4 without using a photolithography method involving an etching process. For this reason, the upper and lower touch panel substrates 7 and 8 can be manufactured without polluting the environment with a photoresist developer or an etchant waste solution. Even when the pattern shape of the transparent electrode is changed, a plurality of transparent electrodes corresponding to the pattern can be formed by processing the transparent conductive film 4 with the CAM data without using a light-shielding mask for photolithography. For this reason, it is necessary to prepare a light-shielding mask with a dedicated light-shielding pattern for each of the touch panel substrates 7 and 8 having different electrode patterns, making it difficult to produce a small quantity of other varieties, and soiling a workpiece with a residual resist solution. There is no problem due to the law, and the lead time can be shortened to sufficiently respond to on-demand requests.
[0063]
On the other hand, in the electrode processing using the photolithography method, there is a problem in that waste liquid such as a photoresist developer or an etching solution is generated to contaminate the environment. In addition, when changing the pattern of the transparent electrode, it is necessary to newly create a light-shielding mask for photolithography, so that the processing efficiency is poor, and it is difficult to cope with small-quantity production of other types and to reduce the cost. In particular, even when several slits are formed in the transparent conductive film 4 as in an analog touch panel, the same photolithography process is required as in the case of a digital touch panel that forms several hundred slits. For this reason, it is difficult to reduce waste liquid and reduce costs despite the small number of processed parts.
[0064]
In the above embodiment, the case where the mounting table 501 of the XY table 5 is processed while being moved in the X-axis direction or the Y-axis direction has been described. However, the present invention is an oblique direction that intersects the X-axis direction and the Y-axis direction. The present invention can also be applied to processing while moving the mounting table 501. In the case of this oblique movement, the reference value Nref (X) shown in the following formula 1 or the reference value Nref (Y) shown in the formula 2 is used as the reference value sent from the CPU 603a to the comparator 603d. The operator “INT” in the formula is an operator for obtaining an integer closest to the numerical value in parentheses. Also, “Nref” on the right side of the equation is a reference value when moving in the X-axis direction or the Y-axis direction. Further, “θ” in the equation is an angle formed by the moving direction and the X-axis direction as shown in FIG. 12, and is obtained from the machining control data.
[Expression 4]
Nref (X) = INT (Nref × cosθ)
[Equation 5]
Nref (Y) = INT (Nref × sinθ)
[0065]
Here, for example, when the movement distance detection pulse signal Sm (X) output from the linear scale 503 in the X-axis direction is used, the reference value Nref (X) shown in Equation 1 is used as the reference value. On the other hand, when the movement distance detection pulse signal Sm (Y) output from the linear scale 503 in the Y-axis direction is used, the reference value Nref (y) shown in Equation 2 is used as the reference value.
From the viewpoint of accurately detecting the moving distance of the mounting table 501 described above, when the moving direction of the mounting table 501 is close to the X axis, the moving distance detection pulse signal Sm (X from the linear scale 503 in the X axis direction is used. ) And the reference value Nref (X) in combination, and the movement direction of the mounting table 501 is close to the Y axis, the movement distance detection pulse signal Sm (Y) from the linear scale 503 in the Y axis direction and the above It is preferable to use in combination with the reference value Nref (Y). By switching and using such a combination, the number of movement distance detection pulse signals corresponding to the pitch of the irradiation spot of the pulse laser beam is not extremely reduced. Can be detected with high accuracy as in the case of moving the lens in the X-axis direction or the Y-axis direction.
[0066]
Moreover, in the said embodiment, although the case where the process which removes a part of transparent conductive film 4 on the transparent insulating board | substrate 3 was demonstrated was demonstrated, this invention is applied without being limited to such a process. It is something that can be done.
For example, as shown in FIG. 13, slits 14 for wiring insulation are formed around a wiring pattern 13 made of a conductive paste (for example, silver paste) formed on the surface of the transparent conductive film 4 on the transparent insulating substrate 3. The same effect can be obtained.
[0067]
The present invention can also be applied to a case where half-etching or drilling is performed on a resin plate. In this case, the depth of the processed part can be made uniform. Furthermore, the present invention performs not only the slit forming process, half-etching process, and punching process, but also a surface treatment process and exposure to a photoresist on a processing object such as a photosensitive layer for resin, ceramic, metal, and photolithography. It can also be applied to cases.
[0068]
In the above-described embodiment, the case where a pulsed near-infrared laser beam (wavelength λ = 1064 nm) emitted from an Nd: YAG laser having a Q switch has been described. It is applicable without limitation. For example, Nd: YLF laser (wavelength λ = 1047 nm), Qd switch, Nd: YVO₄Laser (wavelength λ = 1064 nm), CO₂The present invention can also be applied when a pulse laser such as a laser or a copper vapor laser is used.
The present invention can also be applied to the case of using a laser beam obtained by wavelength-converting the output of various lasers using a nonlinear optical crystal. For example, Nd: YAG laser and LiB₃O₅(LBO), KTiOPO₄, Β-BaB₂O₄(BBO), CsLiB₆O₁₀When combined with a nonlinear optical crystal such as (CLBO), a laser beam in the ultraviolet region with wavelengths of 355 nm and 266 nm can be obtained. As the laser beam in the ultraviolet region for removing the transparent conductive film mainly by ablation, a pulsed ultraviolet laser beam emitted from a KrF excimer laser or the like can also be used.
Furthermore, the present invention can also be applied to the case of using other pulsed energy beams such as a pulsed light beam other than laser light and a charged particle beam.
[0069]
In the above-described embodiment, the case where the irradiation path of the pulse laser beam is fixed by the laser irradiation head 202 and the workpiece is moved in the X direction and the Y direction orthogonal to each other has been described. Can be applied to the case where the energy beam such as a laser is moved in the X direction and the Y direction, or both the energy beam and the workpiece are moved.
[0070]
【The invention's effect】
  Claims 1 to9According to the invention ofWhen machining using a pulsed energy beam, machining elements on the workpiece can be machined uniformly with the target design length.There is an effect.
[0075]
  In particular, the claims5According to the invention, even when the pitch control data is not included in the machining control data input to the beam machining apparatus, machining according to the type of machining element is possible by changing the pitch of the irradiation spot on the workpiece. It has the effect of becoming.
[0076]
  In particular, the claims2 and 6According to the invention, since the YAG laser having a Q switch with a stable beam output is used even when the repetition frequency for controlling the irradiation timing of the energy beam is changed in a relatively wide range, the energy beam is used. There is an effect that the irradiation timing can be easily controlled.
[0077]
  In particular, the claims3 and 7According to the invention, even when the speed of relative movement between the transparent substrate on which the conductive thin film is formed and the laser beam changes, the shape of the slit from which the conductive thin film has been removed by the energy beam becomes uniform. effective.
[0078]
  Claim8 and 9According to the invention, there is an effect that it is possible to manufacture a touch panel substrate in which the shape of the slit between the transparent electrodes formed on the insulating transparent substrate is uniform.
[Brief description of the drawings]
FIG. 1 is a block diagram of a control circuit board used in a beam processing apparatus according to an embodiment of the present invention.
FIG. 2 is a schematic configuration diagram of the beam processing apparatus.
FIG. 3 is a time chart showing output of a linear scale, output of a comparator, and output of a pulse shaping circuit.
FIG. 4 is a time chart showing the output of the pulse shaping circuit, the on / off control of the switch circuit, and the output.
FIG. 5 is an explanatory view of a slit of a transparent conductive film formed by irradiation with pulsed laser light.
FIGS. 6A and 6B are explanatory diagrams of a wrap rate of an irradiation spot of pulsed laser light.
FIG. 7 is a graph showing a relationship between a moving distance and a moving speed of a mounting table on which a transparent insulating substrate is mounted.
FIG. 8A is an explanatory view of an irradiation spot of pulsed laser light irradiated on a transparent conductive film on a transparent insulating substrate in another embodiment.
(B) is explanatory drawing of the slit of the transparent conductive film formed by irradiation of the pulse laser beam.
FIG. 9A is an explanatory diagram of an irradiation spot of pulse laser light in the Y-axis direction that is irradiated onto a transparent conductive film on a transparent insulating substrate.
(B) is explanatory drawing of the lattice-shaped slit of the transparent conductive film formed by irradiation of the pulse laser beam.
FIG. 10 is an enlarged cross-sectional view of a touch panel.
FIG. 11A is an exploded perspective view of a touch panel.
(B) is a plan view of the touch panel.
FIG. 12 is an explanatory diagram of the inclination angle θ in the moving direction of the mounting table on which the transparent insulating substrate is mounted.
FIG. 13 is an explanatory diagram of a wiring pattern at a peripheral end portion of a touch panel and slits around the wiring pattern.
FIG. 14 is an explanatory diagram of an irradiation spot pitch and the like.
[Explanation of symbols]
1 YAG laser equipment
2 Beam irradiation means
3 Transparent insulating substrate
4 Transparent conductive film
5 XY table
6 Control system
101 Laser head
101a YAG rod
101b Q switch
102 Q switch drive unit 102
103 Laser power supply
201 optical fiber
202 Laser irradiation head
501 mounting table
502 linear motor
503 linear scale
601 Host computer device
602 Table drive control device
603 Control circuit board
603a CPU
603b I / O interface
603c pulse counter
603d comparison circuit
603e Pulse width shaping circuit
603f switch circuit

Claims (9)

Based on the processing control data, by irradiating the processing object with the pulsed energy beam repeatedly emitted from the beam source, the processing object and the irradiation point of the energy beam with respect to the processing object are relatively moved. In a beam processing method for processing the workpiece,
Irradiation of the energy beam for each of a plurality of types of processing elements having different lengths to be processed on the processing target so that the actual processing length of the processing element matches the design target length. Calculate and find the pitch P of the spot,
When processing the processing element on the processing object, each energy beam irradiation is performed so that the irradiation spot of the energy beam is arranged at a constant pitch P obtained by the calculation for the processing element. A beam processing method characterized by controlling timing . In the beam processing method 請 Motomeko 1,
A beam processing method, wherein the beam source is a YAG laser having a Q switch. In the beam processing method of Claim 1 or 2 ,
The object to be processed is a transparent conductive film formed on an insulating substrate,
The beam processing method characterized by performing the process which removes a part of this transparent conductive film in slit shape. A beam source that repeatedly emits a pulsed energy beam, a beam irradiation unit that guides and irradiates the energy beam emitted from the beam source to the object to be processed, and the energy beam to the object to be processed and the object to be processed A beam processing apparatus comprising: a relative movement means for relatively moving the irradiation point; and a control means for controlling the beam source and the relative movement means based on machining control data.
Irradiation of the energy beam for each of a plurality of types of processing elements having different lengths to be processed on the processing target so that the actual processing length of the processing element matches the design target length. The pitch P of the spot is calculated and obtained, and when the machining element on the workpiece is machined, the irradiation spot of the energy beam is arranged at the constant pitch P obtained by the calculation for the machining element. And an irradiation timing control means for controlling the irradiation timing of each pulsed energy beam . In beam processing apparatus 請 Motomeko 4,
For each processing element includes a pitch control data generating means for generating a pitch control data for controlling the pitch P,
A beam processing apparatus, wherein the irradiation timing control means is configured to control the irradiation timing of each pulsed energy beam using the pitch control data generated by the pitch control data generation means. The beam processing apparatus according to claim 4 or 5 ,
The beam processing apparatus, wherein the beam source is a YAG laser having a Q switch. The beam processing apparatus according to claim 4, 5 or 6 ,
The object to be processed is a transparent conductive film formed on an insulating substrate,
A beam processing apparatus for performing processing for removing a part of the transparent conductive film into a slit shape. A touch panel substrate manufacturing method for manufacturing a touch panel substrate in which a transparent electrode is formed on an insulating transparent substrate,
Forming a transparent conductive film on the surface of the insulating transparent substrate;
Then, by using the beam processing how according to claim 3, by removing a portion of the transparent conductive film on the insulating transparent substrate in a slit shape, forming a transparent electrode on the insulative transparent substrate A method for manufacturing a touch panel substrate, which is characterized.   A touch panel substrate manufacturing method for manufacturing a touch panel substrate in which a transparent electrode is formed on an insulating transparent substrate,
  Forming a transparent conductive film on the surface of the insulating transparent substrate;
  Next, a transparent electrode is formed on the insulating transparent substrate by removing a part of the transparent conductive film on the insulating transparent substrate into a slit shape using the beam processing apparatus according to claim 7. A method for manufacturing a touch panel substrate.

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