JP3801325B2 - Polishing apparatus and semiconductor wafer polishing method - Google Patents

Polishing apparatus and semiconductor wafer polishing method Download PDF

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Publication number
JP3801325B2
JP3801325B2 JP31621697A JP31621697A JP3801325B2 JP 3801325 B2 JP3801325 B2 JP 3801325B2 JP 31621697 A JP31621697 A JP 31621697A JP 31621697 A JP31621697 A JP 31621697A JP 3801325 B2 JP3801325 B2 JP 3801325B2
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Prior art keywords
polishing
liquid
abrasive
pressure
abrasive liquid
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JPH11138438A (en
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清隆 川島
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Ebara Corp
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Ebara Corp
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Priority to JP31621697A priority Critical patent/JP3801325B2/en
Priority to DE69830121T priority patent/DE69830121T2/en
Priority to EP98120520A priority patent/EP0913233B1/en
Priority to US09/181,993 priority patent/US6293849B1/en
Priority to SG1998004391A priority patent/SG75889A1/en
Priority to TW087118017A priority patent/TW416893B/en
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  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Grinding-Machine Dressing And Accessory Apparatuses (AREA)

Description

【0001】
【発明の属する技術分野】
本発明は、例えば、半導体基板の研磨を行なう研磨装置に関し、特に、一定の流量の砥液を安定に供給して安定な研磨を行なうことができる研磨装置に関する。
【0002】
【従来の技術】
近年、半導体デバイスの高集積化が進むにつれて回路の配線が微細化し、配線間距離もより狭くなりつつある。これに伴い、光リソグラフィなどで回路形成を行なう場合に焦点深度が浅くなるので、ステッパの結像面のより高い平坦度を必要とする。
【0003】
半導体ウエハの表面を平坦化する手段として、研磨工具(例えば、研磨クロスを有する研磨テーブル)と、該研磨テーブルに対して被研磨材を把持してその研磨面を押圧する把持部材とを有し、これらの接触面間に研磨液を供給しながら工具と研磨面を相対的に摺動させることにより研磨を行なう研磨装置が知られている。このような装置は、研磨液として砥液を用いて機械的な研磨を行なうだけでなく、場合によりアルカリ性や酸性の砥液を用いて化学的作用を伴う研磨を行なう。
【0004】
このような研磨装置において良好な研磨を行なうには、一定の濃度及び流量の砥液を安定に供給することが要求される。砥液は、通常、原液とこれを希釈する希釈液を使用の前に混合タンクで混合し、この混合タンクから砥液供給配管を介して研磨装置のノズルに供給する。設備や稼動コストの低減の要請から複数の研磨装置に対して1つの混合タンクから砥液を供給することが求められている。そこで、砥液を主配管中に定常的に流し、それから分岐して各研磨装置に延びる抜き出し配管にローラポンプのような定量ポンプを設けることにより、砥液配管の短縮化と、研磨装置の発停に伴う砥液の凝集を回避する方法が提案されていた。
【0005】
【発明が解決しようとする課題】
しかしながら、上記のような従来の技術においては、ローラポンプの採用により、主配管の圧力変化にかかわらずほぼ一定流量の砥液が供給されるが、圧力変化に対してローラポンプを構成する可撓性チューブの変形及びそれに相当する若干の流量変化は避けられず、さらに流量に脈動を生じること、ローラポンプが該可撓性のチューブを用いているために経時的劣化(へたり)により長期の安定な作動が望めないこと等の課題があった。
【0006】
また、抜き出し配管の長さや径が異なったり、研磨装置の稼動台数の変動による循環配管内の圧力変動に起因する流量変動のため、各研磨装置に一定の濃度及び流量の砥液を安定に供給することができず、良好な研磨状態が得られない場合が有った。
【0007】
この発明は、上記課題に鑑みて、複数の研磨装置に対しても低設備コストでかつ一定の流量の砥液を安定に供給することができる砥液供給装置を提供することを目的とする。さらに、そのような砥液を一定流量で研磨部へ供給する機能を研磨装置自らに有することにより、工場内のレイアウト変更などにも柔軟に対応できる研磨装置を提供することを目的とする。
【0008】
【課題を解決するための手段】
請求項1に記載の発明は、被研磨物を研磨工具に押し付けて研磨を行なう研磨部と、外部の砥液供給装置に接続されて前記研磨部へ砥液を供給する砥液配管とが1つのハウジング内に収容された研磨装置であって、前記砥液を循環させる循環配管と、該循環配管から複数の研磨装置に向けて砥液を供給する抜き出し管とを備え、前記循環配管には、前記砥液を循環させる循環ポンプと、前記循環配管内圧力を一定圧力以上に保つ背圧弁と、圧力センサとが設けられ、該圧力センサの検出値に応じて前記循環ポンプの運転を制御して、前記循環配管内圧力を一定に保ち、前記抜き出し管には、指示信号に基づいて弁開度を調整し、所望の砥液流量とする流量制御手段と、砥液の流入を停止させる手段とを設けたことを特徴とするものである。
【0009】
これにより、外部の砥液供給装置の側の条件に係わらず、例えば多少の圧力変動が有っても、流量制御手段により研磨部に常に一定の流量の砥液が供給され、ユニットタイプとして実用性の高い研磨装置が提供される。
【0011】
そして、主配管では砥液が流通しているので、研磨装置が停止している場合でも導入配管での滞留が防止され、砥液中の成分の沈澱による濃度の変動や詰まりが防止される。従って、滞留しやすい抜き出し配管を短くして円滑な砥液供給を行なうことができる。主配管を、砥液を循環させる循環配管として構成すれば、砥液を常に流通させることができる。循環配管には、砥液の流量変動等による影響を抑える緩衝タンク等を設けるとよい。また、循環配管内に圧力センサ等を配置し、圧力変動を抑制するように循環ポンプを制御する制御装置を設けるとよい。
【0012】
請求項2に記載の発明は、前記流量制御手段は、空気圧力室と、該空気圧力室の空気圧力に応じて開閉する弁とを備え、前記砥液の流量を制御することを特徴とするものである。請求項3に記載の発明は、前記流量制御手段は、前記指示信号に基づいて電空変換器により前記空気圧力室の空気圧力を所定値にすることを特徴とするものである。これにより、二次側圧力が所定値になれば、結果的に流量を一定にすることができる。必要に応じて下流にオリフィスを設けたり、また、電気信号をパイロット圧力に電空変換する電空変換器により指示信号を出力するようにしてもよい。
【0013】
請求項4に記載の発明は、前記抜き出し管に、前記流量制御手段に洗浄液を供給する洗浄液配管が設けられていることを特徴とするものである。これにより、流量制御手段の安定な動作を維持することができる。洗浄液は、例えば純水のように砥液の成分の一部や研磨に有害でないものを用いる。
【0014】
請求項5に記載の発明は、研磨部と、これに砥液を供給する砥液供給手段と、前記研磨部と前記砥液供給手段との間に設けられた砥液循環配管と、前記砥液循環配管から前記研磨部へ延びる抜き出し管とを有する研磨システムを用い、所望の濃度に砥液を希釈する工程と、前記砥液循環配管には、砥液を循環させる循環ポンプと、前記循環配管内圧力を一定圧力以上に保つ背圧弁と、圧力センサとが設けられ、該圧力センサの検出値に応じて前記循環ポンプの運転を制御して、前記循環配管内圧力を一定に保ちつつ、希釈された砥液を前記砥液循環配管内で循環させる工程と、前記砥液循環配管から砥液を前記研磨部に向けて抜き出す工程と、予め設定された砥液供給量に応じた指示信号に基づいて弁開度を調整し、所望の砥液流量を前記研磨部に供給する工程とを行なうことを特徴とするものである。
【0015】
請求項6に記載の発明は、さらに、前記砥液循環配管から前記研磨部への砥液の抜き出しを停止し、前記抜き出し配管を洗浄する工程を行なうことを特徴とするものである。
【0017】
【発明の実施の形態】
以下、この発明の実施の形態を図面を参照して説明する。図1は、この実施の形態の研磨システム1の全体の構成を示すもので、この研磨システムは、原液と希釈液から所望の濃度の砥液を供給する砥液供給装置3と、被研磨物を研磨工具により研磨する研磨装置4と、砥液を各研磨装置4の近傍に導く循環経路20とを有している。
【0018】
砥液供給装置3は、原液を収容する原液タンク10と、これを所定の濃度に薄めるための希釈液を貯留する希釈液タンク12の2つの供給源と、これらの供給源から配管14,16を介して供給される原料を合流させて所定濃度の砥液とする混合部18とからなる。尚、希釈液の供給源は、工場内を流れる純水供給ライン等でもよい。
【0019】
研磨装置4は、例えば、回転する研磨テーブル22aに貼付された研磨クロスに半導体ウエハの被研磨面を押し付けて研磨を行なう研磨部22と、これに砥液を供給するノズル58、循環経路20からノズルに砥液を導びく抜き出し配管24、及びそれに付随する砥液の制御系を含めて一体にユニット化されて構成されている。これらの、砥液供給装置3と、循環経路20と、抜き出し配管24とで砥液供給システム2を形成する。
【0020】
まず、砥液供給装置3について説明する。砥液の原液としては、例えば、シリカゲルのような所定の粒度の粒子を含有する酸、アルカリ、又は中性の液が研磨対象に応じて用いられ、希釈液は、通常、不純物のない純水等が用いられる。この例では、原液は原液タンク10に収容され、原液供給ライン14は、一方が空になったときに切り換えて用いるように2系統が設けられている。原液ライン14及び希釈液ライン16は、それぞれ、例えば、開閉弁26及び圧力調整弁28を介して混合部であるバッファチューブ18に接続され、これにより、バッファチューブ18内で所定の混合比の砥液が製造される。圧力調整弁28の構成については後述する。
【0021】
混合部であるバッファチューブ18は、この例では、複数の研磨装置に砥液を供給する循環経路20の途中に設置されている。このバッファチューブ18は、循環経路20を形成する循環配管21より大径の円筒状容器30として縦に配置されて構成され、底部に排出口32が設けられ、上部はOリングを介して接合された蓋36で覆われている。蓋36には、循環配管21の戻り配管、及び原液及び希釈液のラインの配管14,16がそれぞれ接続されている。
【0022】
容器30には、液面のレベルを検知するレベル検知器40a,40b,40cが設けられ、これは、例えば、上限、下限、最下限を検知し、その信号を図示しない制御装置に出力するようになっている。この信号に基づいて、制御装置は、原液及び希釈液のラインの開閉弁26や圧力調整弁28に信号を出力し、液面レベルが下限になったときには原液及び希釈液を供給し、上限になったら供給を停止するように制御する。万一、液面レベルが最下限に達したときは、警報や研磨部22へ研磨処理の停止信号等を発する。
【0023】
蓋36には、さらに、容器30内の空気を伸縮可能な素材でできたエアバッグ42に連通させる空気流通管44が設けられている。エアバッグ42は、容器30内の空間を外気に対して気密状態に保ちつつ内部の液面レベルの変動による内圧変動を抑えるもので、柔軟性と耐用性のある例えばテフロン(商品名)のような素材から、レベル変動に対応する容積を有する大きさに形成されている。
【0024】
次に、循環経路20について説明する。循環配管21は、バッファチューブ18の下端の排出口32から、砥液を供給すべき1又は複数の研磨部22の近傍を巡り、バッファチューブ18に戻ってその戻し管38に接続されて構成されている。循環配管21には、砥液を循環させる循環ポンプ46、循環配管の圧力を一定に保持する背圧弁48、圧力センサ50等が設けられている。
【0025】
圧力センサ50の出力は図示しない制御装置に入力され監視される。制御装置はその検出値に応じて循環ポンプ46の運転を制御して循環配管21内の圧力を一定に保つようにしてもよい。通常は循環ポンプ46は一定の運転状態に保持され、背圧弁48によって配管内の圧力が一定に保たれる。循環配管21には、それぞれの研磨装置4に近い位置から、開閉弁25と接続用フランジ23aを有する分配管23が分岐しており、このフランジ23aに研磨装置4の抜き出し配管24のフランジ24aが接続されるようになっている。
【0026】
次に、研磨装置4について説明する。抜き出し管24には、上流側から、開閉弁52、二次側(下流側)の圧力を一定に制御する圧力調整弁54、及びその下流側のオリフィス56が設けられ、その下流側で研磨装置のノズル58に接続されている。圧力調整弁54とその下流側のオリフィス56は、後述するように流量調整弁の役割を果たす。圧力調整弁54には、コントローラ61から一定の電気信号を入力し、その信号に相当する一定の空気圧力を供給するための電空変換器60が接続されている。
【0027】
すなわち、コントローラ61で任意に砥液供給量を設定し、これに基づいて電空変換器60によって、図示しないパイロットエア源から所定のパイロットエア圧力を圧力調整弁54に供給することができるようになっている。また、開閉弁52と圧力調整弁54の間には、開閉弁62を有する洗浄液配管64が合流している。
【0028】
このような構成の研磨システムでは、砥液を各研磨装置4に導くための砥液配管内の砥液が常時循環しているので、砥液配管内での滞留による液濃度変化や固形物の沈積による詰まりを防止することができる。また、結果として、砥液配管を長くすることができるので、1つの砥液供給源(混合部)18から複数の研磨装置4に砥液を安定に供給することができ、全体として装置コストを低下させることができる。
【0029】
圧力調整弁54(及び圧力調整弁28)の構成を以下に説明する。これは、図2に示すように、上ケーシング66、下ケーシング68、及び下部押え板70からなるケーシング内に弁装置72が収容されて構成されている。すなわち、上ケーシング66には電空変換器60に導通する圧力導入路74を有するエア圧力室76が形成され、下ケーシング68には流体導入路78、1次弁室80、2次弁室82、流体導出路84からなる流体流路が形成され、上ケーシング66と下ケーシング68の間にはダイアフラム86が挟み込まれてエア圧力室76と2次弁室82を区画している。
【0030】
1次弁室80と2次弁室82の間には弁座88が形成され、これに下から弁体90が挿入されており、この弁体90はダイアフラム86に押え板92とボルト94により固定された弁棒96に取り付けられて昇降可能になっている。圧力調整弁54を構成する部材の接合面の所定箇所にはそれぞれシール用のOリング98が配されている。
【0031】
上記のように構成した砥液供給装置の作用を説明する。制御装置は、循環ポンプ46をその下流側の圧力が所定値以上になるように運転するように制御し、これにより、砥液の循環経路20内の循環流を常時形成する。
【0032】
各研磨装置4が作動すると、それぞれのコントローラ61が各開閉弁52に開信号を出力するとともに、予め設定された砥液供給量に応じた流量指示信号を各電空変換器60に出力する。電空変換器60はその流量指示信号に基づき、それに対応する空気圧力を圧力調整弁54の空気圧力室76にパイロットエア圧力として送り、これにより、弁体90と弁座88の間が開口する。圧力調整弁54では、流体の入口78より流入した砥液が弁装置72、弁体90と弁座88で形成される開口を通って流体圧力室82に流れる。流体圧力室82の圧力はオリフィス29を流れる砥液の流量によって一義的に決定される。従って、流体圧力室82の圧力を所望の圧力に制御することによって、砥液の流量を所望の量に制御できる。
【0033】
このとき、流体の出口84から出力される砥液の流量は流体圧力室82の圧力を制御することによって、以下のように一定に保たれる。空気圧力室76のパイロット圧力と流体圧力室82の砥液圧力がダイヤフラム86を介してバランスし、流体の出口84より流れ出る。このとき流体圧力室82の圧力が高くなると弁棒96、弁体90が上に押し上げられ、流体の流路となる前記弁座88と弁体90で形成された空間が狭められ、流路の抵抗が増すため、流体圧力室82の砥液圧力は所定の圧力(空気圧力76のパイロットエア圧力とバランスする圧力)に瞬時に戻る。流体圧力室82の圧力が低くなった場合は逆に作用し、所定の圧力に戻る。その結果、パイロットエア圧力の変動幅及び周期が短くなり、パイロットエア圧力と下流側の配管抵抗で決まる所定流量の砥液が安定して各研磨部22のノズル58より流出する。
【0034】
なお、砥液の流量範囲レベルを変えたい場合には、圧力調整弁54の下流に設けるオリフィス56による抵抗を変えればよい。オリフィス56の抵抗を変えるためには、穴サイズの異なるオリフィスを取り付ければよい。
【0035】
バッファチューブ18内の砥液が下限以下になると、レベルセンサ40cの信号により制御装置は開閉弁26を開とし、これにより、圧力調整弁28により流量を制御された原液及び純水が一定比率で、レベルが上限に達するまでバッファチューブ18に流入し、ここで混合する。尚、圧力調整弁28は圧力調整弁54と同じ構造であり、圧力を一定に制御するため、結果として流量も制御されている。
【0036】
ある研磨装置4が研磨を停止すると、その抜き出し配管24の開閉弁52は閉止される。これにより、循環配管21内の圧力は一時的に上昇するが、他の研磨装置4の抜き出し配管24においては、圧力調整弁54により、一次側の圧力変動にもかかわらず二次側に一定の砥液圧力が維持され、従って、流量が一定に保持される。
【0037】
研磨を再開する場合には、砥液を供給する前に、洗浄液配管64の開閉弁62を開とし、抜き出し配管24の中を洗浄する。これにより、砥液の滞留に起因する詰まりや砥液濃度変化を抑制することができる。
【0038】
図3は、図1の実施の形態の変形例であって、工場内の循環経路20と各研磨装置4の配置をより具体的に示している。ここでは、循環経路20は、砥液供給装置3に繋がる幹経路100からなっており、開閉弁106と接続用フランジ104aを有する分配管104が設けられ、このフランジ104aを介して各研磨装置4の抜き出し配管24のフランジ24aに接続されるようになっている。開閉弁106は、本システムに新たな研磨装置4をつなげるとき、本砥液供給システムを停止することなく研磨装置4をつなげるのに必要である。幹経路100を工場内に施工するとき、開閉弁106を多く取り付けることにより、新たな研磨装置4の設置が柔軟に行える。
【0039】
このように循環経路20を構成することにより、幹経路100を各研磨装置4のより近傍まで配管することができるので、砥液の滞流が予想される抜き出し配管24をさらに短くすることができ、砥液供給の安定化という本願発明の効果をより高めることができる。なお、この図においては、4つの分配管104のうちの2つは、研磨装置4が繋がれていない待機状態となっている。
【0040】
図4は、この発明のさらに他の実施の形態を示すもので、この実施の形態では、研磨装置4Aのユニットの中に、循環経路20の一部を構成する導入配管120を収容している。すなわち、導入配管120は往復する配管として研磨装置4A内に延び、その先端部に抜き出し配管24が設けられている。導入配管120は、その両端に設けられたフランジ120aを循環配管21のフランジ21aに接続することによって循環経路20の一部を構成している。抜き出し配管24には、先の実施の形態と同様に、流量制御手段である圧力調整弁54と砥液の流入を停止する開閉弁52が設けられている。
【0041】
この実施の形態においては、砥液の循環経路20が研磨装置4Aのユニットの中まで延びているので、その分、先の実施の形態に比べて抜き出し配管24が短くなる。従って、研磨装置4Aの稼動停止等によって砥液が滞流して砥液成分の析出や詰まりを生じ易い管路が短くなり、稼動がさらに安定化する。
【0042】
なお、上記の実施の形態においては、研磨装置4,4Aを抜き出し配管24や砥液制御系を含めてユニット化した構成としたが、それぞれの要素を個別に組み合わせた構成としてもよいことは言うまでもない。また、1台の研磨装置4,4Aに異なる種類の砥液等の処理液を供給して、複数の研磨処理を行うため、1台又は複数の研磨装置4,4Aに対して砥液供給装置3を複数設けてもよい。
【0043】
【発明の効果】
以上説明したように、この発明によれば、外部の砥液供給装置の側の条件に係わらず、流量制御手段により研磨部に常に一定の流量の砥液が供給され、ユニットタイプとして実用性の高い研磨装置が提供される。また、砥液が流通する主配管と、これより分岐する抜き出し配管を組み合わせ、抜き出し配管に流量制御手段を設ける構成により、複数の研磨部に砥液を供給する場合でも、砥液が滞留しやすい抜き出し配管を短くして円滑な砥液供給を行なうことができる。さらに、主配管における圧力変動を流量制御手段が吸収するので一定の流量の砥液を安定に供給することができ、半導体基板等の良好な研磨作業を促進することができる。
【図面の簡単な説明】
【図1】この発明の実施の形態の研磨システムの全体の構成を示すフロー図である。
【図2】図1の圧力調整弁の構成を示す断面図である。
【図3】この発明の第2の実施の形態の研磨システムの全体の構成を示すフロー図である。
【図4】この発明の第3の実施の形態の研磨システムの全体の構成を示すフロー図である。
【符号の説明】
1 研磨システム
2 砥液供給システム
3 砥液供給装置
4,4A 研磨装置
10 原液タンク
12 希釈液タンク
14 原液供給経路
18 混合部
20 循環経路
21 循環配管
22 研磨部
24 抜き出し配管
28 流量調整弁
40a,40b,40c レベルセンサ
42 エアバッグ
54 圧力調整弁
56 オリフィス
58 ノズル
60 電空変換器
[0001]
BACKGROUND OF THE INVENTION
The present invention relates to, for example, a polishing apparatus that polishes a semiconductor substrate, and more particularly to a polishing apparatus that can stably supply a polishing liquid at a constant flow rate and perform stable polishing.
[0002]
[Prior art]
In recent years, as semiconductor devices are highly integrated, circuit wiring is becoming finer and the distance between wirings is becoming narrower. Along with this, the depth of focus becomes shallow when circuit formation is performed by optical lithography or the like, so that a higher flatness of the imaging surface of the stepper is required.
[0003]
As means for flattening the surface of a semiconductor wafer, a polishing tool (for example, a polishing table having a polishing cloth) and a gripping member that grips a material to be polished against the polishing table and presses the polishing surface are provided. A polishing apparatus that performs polishing by relatively sliding a tool and a polishing surface while supplying a polishing liquid between these contact surfaces is known. Such an apparatus not only performs mechanical polishing using a polishing liquid as a polishing liquid, but also performs polishing with chemical action using an alkaline or acidic polishing liquid as the case may be.
[0004]
In order to perform good polishing in such a polishing apparatus, it is required to stably supply an abrasive liquid having a certain concentration and flow rate. The abrasive liquid is usually mixed with a stock solution and a diluting liquid for diluting it in a mixing tank before use, and supplied from this mixing tank to a nozzle of a polishing apparatus via an abrasive liquid supply pipe. It is required to supply abrasive liquid from one mixing tank to a plurality of polishing apparatuses in order to reduce equipment and operating costs. Therefore, the abrasive liquid is constantly flowed into the main pipe, and a metering pump such as a roller pump is provided in the extraction pipe that branches off from the main pipe and extends to each polishing apparatus. There has been proposed a method for avoiding the agglomeration of the abrasive liquid due to stopping.
[0005]
[Problems to be solved by the invention]
However, in the conventional technology as described above, the roller pump is used to supply the abrasive fluid at a substantially constant flow rate regardless of the pressure change of the main pipe. The deformation of the tube and a slight change in the flow rate are unavoidable, and the flow rate pulsates, and since the roller pump uses the flexible tube, it deteriorates over time (sagging) due to deterioration over time. There were problems such as the inability to expect stable operation.
[0006]
In addition, because the flow rate changes due to pressure fluctuations in the circulation piping due to differences in the length and diameter of the extraction pipes and fluctuations in the number of operating polishing units, a constant concentration and flow rate of abrasive fluid is stably supplied to each polishing unit. In some cases, a good polishing state could not be obtained.
[0007]
In view of the above problems, an object of the present invention is to provide an abrasive liquid supply device capable of stably supplying an abrasive liquid at a constant flow rate with a low equipment cost even to a plurality of polishing apparatuses. It is another object of the present invention to provide a polishing apparatus that can flexibly cope with a layout change in a factory by having the function of supplying such an abrasive liquid at a constant flow rate to a polishing unit.
[0008]
[Means for Solving the Problems]
According to the first aspect of the present invention, there are provided a polishing section that performs polishing by pressing an object to be polished against a polishing tool, and an abrasive liquid pipe that is connected to an external abrasive liquid supply device and supplies an abrasive liquid to the polishing section. A polishing apparatus housed in one housing, comprising: a circulation pipe for circulating the abrasive liquid; and an extraction pipe for supplying the abrasive liquid from the circulation pipe to a plurality of polishing apparatuses. A circulating pump that circulates the abrasive fluid, a back pressure valve that keeps the pressure in the circulating pipe above a certain pressure, and a pressure sensor, and controls the operation of the circulating pump according to the detected value of the pressure sensor. The pressure in the circulation pipe is kept constant, the flow rate control means for adjusting the valve opening degree based on the instruction signal to obtain a desired abrasive fluid flow rate, and the means for stopping the inflow of the abrasive fluid in the extraction pipe in which characterized in that a and.
[0009]
As a result, regardless of the conditions on the external abrasive fluid supply device side, for example, even if there is some pressure fluctuation, the abrasive fluid is always supplied to the polishing unit by the flow rate control means. High polishing apparatus is provided.
[0011]
And since the abrasive fluid is circulating in the main piping, even when the polishing apparatus is stopped, the retention in the introduction piping is prevented, and fluctuations in concentration and clogging due to precipitation of components in the abrasive fluid are prevented. Therefore, it is possible to shorten the length of the extraction piping that tends to stay and to supply the abrasive fluid smoothly. If the main pipe is configured as a circulation pipe for circulating the abrasive liquid, the abrasive liquid can always be circulated. The circulation piping may be provided with a buffer tank or the like that suppresses the influence caused by fluctuations in the abrasive fluid flow rate. Further, it is preferable to provide a control device for controlling the circulation pump so as to suppress pressure fluctuation by arranging a pressure sensor or the like in the circulation pipe.
[0012]
The invention according to claim 2 is characterized in that the flow rate control means includes an air pressure chamber and a valve that opens and closes according to the air pressure of the air pressure chamber, and controls the flow rate of the abrasive fluid. Is. The invention according to claim 3, wherein the flow control means is for the air pressure of said air pressure chamber, wherein the to Turkey to a predetermined value by pneumatic transducer electricity based on the instruction signal. Thereby, if the secondary pressure becomes a predetermined value, the flow rate can be made constant as a result. If necessary, an orifice may be provided downstream, or the instruction signal may be output by an electropneumatic converter that electropneumatically converts the electric signal into a pilot pressure.
[0013]
According to a fourth aspect of the invention, the discharge pipe, is characterized in that the washing liquid pipe for supplying cleaning liquid to said flow control means. Thereby, the stable operation | movement of a flow control means can be maintained. As the cleaning liquid, for example, a part of the components of the abrasive liquid such as pure water or a liquid that is not harmful to polishing is used.
[0014]
The invention according to claim 5 is a polishing part, an abrasive liquid supply means for supplying an abrasive liquid to the polishing part, an abrasive liquid circulation pipe provided between the polishing part and the abrasive liquid supply means, and the abrasive Using a polishing system having an extraction pipe extending from the liquid circulation pipe to the polishing section, diluting the abrasive liquid to a desired concentration, a circulation pump for circulating the abrasive liquid in the abrasive liquid circulation pipe, and the circulation A back pressure valve that keeps the pressure in the pipe above a certain pressure and a pressure sensor are provided, and the operation of the circulation pump is controlled according to the detection value of the pressure sensor to keep the pressure in the circulation pipe constant. Circulating the diluted abrasive liquid in the abrasive liquid circulation pipe, extracting the abrasive liquid from the abrasive liquid circulation pipe toward the polishing section, and an instruction signal corresponding to a preset abrasive liquid supply amount The valve opening is adjusted based on the It is characterized in that performing the step of supplying the parts.
[0015]
The invention according to claim 6, further is characterized in that a step of said stop polishing liquid extraction of from abrasive liquid circulation piping to said polishing unit, washing the extraction pipe.
[0017]
DETAILED DESCRIPTION OF THE INVENTION
Embodiments of the present invention will be described below with reference to the drawings. FIG. 1 shows an overall configuration of a polishing system 1 of this embodiment. This polishing system includes an abrasive liquid supply device 3 for supplying an abrasive liquid having a desired concentration from a stock solution and a diluting liquid, and an object to be polished. And a circulation path 20 that guides the polishing liquid to the vicinity of each polishing apparatus 4.
[0018]
The abrasive liquid supply device 3 includes two supply sources, a stock solution tank 10 for storing the stock solution, a dilution solution tank 12 for storing a dilution solution for diluting the stock solution to a predetermined concentration, and pipes 14 and 16 from these supply sources. The mixing part 18 which joins the raw material supplied through this and makes it the abrasive liquid of a predetermined density | concentration is comprised. The supply source of the diluent may be a pure water supply line that flows in the factory.
[0019]
The polishing apparatus 4 includes, for example, a polishing unit 22 that performs polishing by pressing a surface to be polished of a semiconductor wafer against a polishing cloth affixed to a rotating polishing table 22a, a nozzle 58 that supplies abrasive liquid thereto, and a circulation path 20 The unit includes a discharge pipe 24 for introducing the abrasive liquid to the nozzle and a control system for the abrasive liquid associated therewith. The abrasive liquid supply system 2 is formed by the abrasive liquid supply device 3, the circulation path 20, and the extraction pipe 24.
[0020]
First, the abrasive fluid supply device 3 will be described. As the stock solution of the abrasive liquid, for example, an acid, alkali, or neutral liquid containing particles of a predetermined particle size such as silica gel is used depending on the object to be polished, and the diluting liquid is usually pure water without impurities. Etc. are used. In this example, the stock solution is stored in the stock solution tank 10, and the stock solution supply line 14 is provided with two systems so as to be switched and used when one becomes empty. The stock solution line 14 and the diluent solution line 16 are respectively connected to a buffer tube 18 as a mixing unit via, for example, an on-off valve 26 and a pressure adjustment valve 28, and thereby, an abrasive having a predetermined mixing ratio in the buffer tube 18. A liquid is produced. The configuration of the pressure adjustment valve 28 will be described later.
[0021]
In this example, the buffer tube 18 that is a mixing unit is installed in the middle of a circulation path 20 that supplies abrasive liquid to a plurality of polishing apparatuses. The buffer tube 18 is vertically arranged as a cylindrical container 30 having a diameter larger than that of the circulation pipe 21 that forms the circulation path 20, a discharge port 32 is provided at the bottom, and the upper part is joined via an O-ring. Covered with a lid 36. The lid 36 is connected to the return pipe of the circulation pipe 21 and the pipes 14 and 16 of the stock solution and dilution solution lines, respectively.
[0022]
The container 30 is provided with level detectors 40a, 40b, and 40c that detect the level of the liquid level, and this detects, for example, an upper limit, a lower limit, and a lower limit, and outputs the signal to a control device (not shown). It has become. Based on this signal, the control device outputs a signal to the open / close valve 26 and the pressure regulating valve 28 of the stock solution and dilution solution lines, and supplies the stock solution and dilution solution when the liquid level becomes the lower limit. When it comes, control to stop the supply. In the unlikely event that the liquid level reaches the lowest limit, a warning or a stop signal for polishing processing is issued to the polishing unit 22.
[0023]
The lid 36 is further provided with an air circulation pipe 44 that communicates air in the container 30 with an airbag 42 made of a stretchable material. The air bag 42 keeps the space in the container 30 airtight with respect to the outside air, and suppresses internal pressure fluctuations due to fluctuations in the liquid level inside. For example, Teflon (trade name) having flexibility and durability. The material is formed into a size having a volume corresponding to the level fluctuation.
[0024]
Next, the circulation path 20 will be described. The circulation pipe 21 circulates in the vicinity of one or a plurality of polishing portions 22 to which the abrasive liquid is to be supplied from the discharge port 32 at the lower end of the buffer tube 18, returns to the buffer tube 18, and is connected to the return pipe 38. ing. The circulation pipe 21 is provided with a circulation pump 46 for circulating the abrasive liquid, a back pressure valve 48 for keeping the pressure of the circulation pipe constant, a pressure sensor 50 and the like.
[0025]
The output of the pressure sensor 50 is input to a control device (not shown) and monitored. The control device may control the operation of the circulation pump 46 in accordance with the detected value so as to keep the pressure in the circulation pipe 21 constant. Normally, the circulation pump 46 is maintained in a constant operation state, and the pressure in the piping is maintained constant by the back pressure valve 48. A distribution pipe 23 having an on-off valve 25 and a connection flange 23a is branched from the position close to each polishing apparatus 4 to the circulation pipe 21, and a flange 24a of an extraction pipe 24 of the polishing apparatus 4 is connected to the flange 23a. Connected.
[0026]
Next, the polishing apparatus 4 will be described. The extraction pipe 24 is provided with an on-off valve 52, a pressure regulating valve 54 for controlling the pressure on the secondary side (downstream side) from the upstream side, and an orifice 56 on the downstream side, and a polishing device on the downstream side. The nozzle 58 is connected. The pressure regulating valve 54 and the orifice 56 on the downstream side serve as a flow regulating valve as will be described later. An electropneumatic converter 60 is connected to the pressure adjusting valve 54 for inputting a constant electric signal from the controller 61 and supplying a constant air pressure corresponding to the signal.
[0027]
That is, the controller 61 arbitrarily sets the abrasive fluid supply amount, and based on this, the electropneumatic converter 60 can supply a predetermined pilot air pressure to the pressure regulating valve 54 from a pilot air source (not shown). It has become. A cleaning liquid pipe 64 having an on / off valve 62 is joined between the on / off valve 52 and the pressure regulating valve 54.
[0028]
In the polishing system having such a configuration, the abrasive liquid in the abrasive liquid pipe for guiding the abrasive liquid to each polishing apparatus 4 is constantly circulated. Clogging due to deposition can be prevented. In addition, as a result, the abrasive liquid piping can be lengthened, so that the abrasive liquid can be stably supplied from the single abrasive liquid supply source (mixing unit) 18 to the plurality of polishing apparatuses 4, and the apparatus cost as a whole can be reduced. Can be reduced.
[0029]
The configuration of the pressure regulating valve 54 (and the pressure regulating valve 28) will be described below. As shown in FIG. 2, the valve device 72 is accommodated in a casing including an upper casing 66, a lower casing 68, and a lower presser plate 70. That is, the upper casing 66 is formed with an air pressure chamber 76 having a pressure introduction path 74 that is connected to the electropneumatic converter 60, and the lower casing 68 is provided with a fluid introduction path 78, a primary valve chamber 80, and a secondary valve chamber 82. A fluid flow path comprising a fluid outlet path 84 is formed, and a diaphragm 86 is sandwiched between the upper casing 66 and the lower casing 68 to partition the air pressure chamber 76 and the secondary valve chamber 82.
[0030]
A valve seat 88 is formed between the primary valve chamber 80 and the secondary valve chamber 82, and a valve body 90 is inserted into the valve seat 88 from below, and the valve body 90 is attached to the diaphragm 86 by a presser plate 92 and bolts 94. It is attached to a fixed valve stem 96 and can be raised and lowered. O-rings 98 for sealing are respectively arranged at predetermined locations on the joint surfaces of the members constituting the pressure regulating valve 54.
[0031]
The operation of the abrasive fluid supply apparatus configured as described above will be described. The control device controls the circulation pump 46 to operate so that the pressure on the downstream side thereof is equal to or higher than a predetermined value, thereby constantly forming a circulation flow in the circulation path 20 of the abrasive liquid.
[0032]
When each polishing apparatus 4 is operated, each controller 61 outputs an open signal to each on-off valve 52 and outputs a flow rate instruction signal corresponding to a preset abrasive liquid supply amount to each electropneumatic converter 60. The electropneumatic converter 60 sends the corresponding air pressure as pilot air pressure to the air pressure chamber 76 of the pressure regulating valve 54 based on the flow rate instruction signal, thereby opening the space between the valve body 90 and the valve seat 88. . In the pressure regulating valve 54, the abrasive fluid that has flowed from the fluid inlet 78 flows into the fluid pressure chamber 82 through an opening formed by the valve device 72, the valve body 90, and the valve seat 88. The pressure in the fluid pressure chamber 82 is uniquely determined by the flow rate of the abrasive fluid flowing through the orifice 29. Therefore, the flow rate of the abrasive liquid can be controlled to a desired amount by controlling the pressure of the fluid pressure chamber 82 to a desired pressure.
[0033]
At this time, the flow rate of the abrasive liquid output from the fluid outlet 84 is kept constant as follows by controlling the pressure in the fluid pressure chamber 82. The pilot pressure in the air pressure chamber 76 and the abrasive pressure in the fluid pressure chamber 82 are balanced through the diaphragm 86 and flow out from the fluid outlet 84. At this time, when the pressure in the fluid pressure chamber 82 is increased, the valve rod 96 and the valve body 90 are pushed up, and the space formed by the valve seat 88 and the valve body 90 serving as a fluid flow path is narrowed. Since the resistance increases, the abrasive pressure in the fluid pressure chamber 82 instantaneously returns to a predetermined pressure (a pressure that balances with the pilot air pressure of the air pressure 76). When the pressure in the fluid pressure chamber 82 becomes low, the action is reversed and the pressure returns to a predetermined pressure. As a result, the fluctuation range and cycle of the pilot air pressure are shortened, and a predetermined flow rate of the abrasive fluid determined by the pilot air pressure and the downstream pipe resistance is stably discharged from the nozzles 58 of the polishing units 22.
[0034]
In order to change the flow rate range level of the abrasive liquid, the resistance by the orifice 56 provided downstream of the pressure regulating valve 54 may be changed. In order to change the resistance of the orifice 56, orifices having different hole sizes may be attached.
[0035]
When the abrasive liquid in the buffer tube 18 becomes lower than the lower limit, the control device opens the on-off valve 26 by the signal of the level sensor 40c, whereby the stock solution and the pure water whose flow rates are controlled by the pressure regulating valve 28 are constant. , Flows into the buffer tube 18 until the level reaches the upper limit, where it mixes. Note that the pressure regulating valve 28 has the same structure as the pressure regulating valve 54, and the flow rate is also controlled as a result because the pressure is controlled to be constant.
[0036]
When a certain polishing apparatus 4 stops polishing, the on-off valve 52 of the extraction pipe 24 is closed. As a result, the pressure in the circulation pipe 21 temporarily rises, but in the extraction pipe 24 of the other polishing apparatus 4, the pressure adjustment valve 54 keeps the pressure on the secondary side constant regardless of the pressure fluctuation on the primary side. The abrasive fluid pressure is maintained, and therefore the flow rate is kept constant.
[0037]
When the polishing is resumed, the on-off valve 62 of the cleaning liquid pipe 64 is opened and the inside of the extraction pipe 24 is cleaned before supplying the polishing liquid. Thereby, the clogging and abrasive fluid concentration change resulting from the retention of the abrasive fluid can be suppressed.
[0038]
FIG. 3 is a modification of the embodiment of FIG. 1 and more specifically shows the arrangement of the circulation path 20 and each polishing apparatus 4 in the factory. Here, the circulation path 20 is composed of a trunk path 100 connected to the abrasive liquid supply device 3, and a distribution pipe 104 having an on-off valve 106 and a connection flange 104a is provided, and each polishing apparatus 4 is provided via this flange 104a. Is connected to the flange 24a of the extraction pipe 24. The on-off valve 106 is necessary to connect the polishing apparatus 4 without stopping the present polishing liquid supply system when connecting a new polishing apparatus 4 to the present system. When constructing the trunk path 100 in the factory, by installing a large number of on-off valves 106, a new polishing apparatus 4 can be installed flexibly.
[0039]
By configuring in this way the circulation path 20, since the stem path 100 may piping to Rukoto up closer to the respective polishing unit 4, to further shorten the extraction pipe 24 to the polishing liquid residence of the expected The effect of the present invention of stabilizing the supply of the abrasive liquid can be further enhanced. In this figure, two of the four distribution pipes 104 are in a standby state in which the polishing apparatus 4 is not connected.
[0040]
FIG. 4 shows still another embodiment of the present invention. In this embodiment, an introduction pipe 120 constituting a part of the circulation path 20 is accommodated in a unit of the polishing apparatus 4A. . That is, the introduction pipe 120 extends into the polishing apparatus 4A as a reciprocating pipe, and an extraction pipe 24 is provided at the tip thereof. The introduction pipe 120 constitutes a part of the circulation path 20 by connecting flanges 120 a provided at both ends thereof to the flange 21 a of the circulation pipe 21. Similar to the previous embodiment, the extraction pipe 24 is provided with a pressure adjusting valve 54 that is a flow rate control means and an on-off valve 52 that stops the inflow of abrasive fluid.
[0041]
In this embodiment, since the abrasive fluid circulation path 20 extends into the unit of the polishing apparatus 4A, the extraction pipe 24 is shortened by that amount compared to the previous embodiment. Accordingly, the abrasive fluid stagnates due to the operation stop of the polishing apparatus 4A and the like, and the pipeline that is liable to cause precipitation or clogging of the abrasive fluid components is shortened, and the operation is further stabilized.
[0042]
In the above-described embodiment, the polishing apparatuses 4 and 4A are configured as a unit including the extraction pipe 24 and the abrasive liquid control system. However, it goes without saying that the respective elements may be combined individually. Yes. In addition, in order to perform a plurality of polishing processes by supplying different types of processing liquids such as abrasive liquids to one polishing apparatus 4, 4 </ b> A, an abrasive liquid supply apparatus for one or a plurality of polishing apparatuses 4, 4 </ b> A. A plurality of 3 may be provided.
[0043]
【The invention's effect】
As described above, according to the present invention, regardless of the conditions on the side of the external abrasive liquid supply device, a constant flow rate of abrasive liquid is always supplied to the polishing unit by the flow rate control means, which is highly practical as a unit type. A polishing apparatus is provided. In addition, by combining the main pipe through which the abrasive fluid circulates and the extraction pipe branching from this, and providing the flow rate control means in the extraction pipe, the abrasive liquid tends to stay even when the abrasive liquid is supplied to a plurality of polishing units. The extraction piping can be shortened to smoothly supply the abrasive liquid. Furthermore, since the flow rate control means absorbs pressure fluctuations in the main pipe, a constant flow rate of the abrasive liquid can be stably supplied, and a good polishing operation of the semiconductor substrate or the like can be promoted.
[Brief description of the drawings]
FIG. 1 is a flowchart showing an overall configuration of a polishing system according to an embodiment of the present invention.
FIG. 2 is a cross-sectional view showing a configuration of the pressure regulating valve of FIG.
FIG. 3 is a flowchart showing an overall configuration of a polishing system according to a second embodiment of the present invention.
FIG. 4 is a flowchart showing an overall configuration of a polishing system according to a third embodiment of the present invention.
[Explanation of symbols]
DESCRIPTION OF SYMBOLS 1 Polishing system 2 Abrasive liquid supply system 3 Abrasive liquid supply apparatus 4, 4A Polishing apparatus 10 Raw liquid tank 12 Diluent tank 14 Raw liquid supply path 18 Mixing part 20 Circulating path 21 Circulating pipe 22 Polishing part 24 Extraction pipe 28 40b, 40c Level sensor 42 Air bag 54 Pressure adjustment valve 56 Orifice 58 Nozzle 60 Electropneumatic converter

Claims (6)

被研磨物を研磨工具に押し付けて研磨を行なう研磨部と、外部の砥液供給装置に接続されて前記研磨部へ砥液を供給する砥液配管とが1つのハウジング内に収容された研磨装置であって、
前記砥液を循環させる循環配管と、
該循環配管から複数の研磨装置に向けて砥液を供給する抜き出し管とを備え、
前記循環配管には、前記砥液を循環させる循環ポンプと、前記循環配管内圧力を一定圧力以上に保つ背圧弁と、圧力センサとが設けられ、該圧力センサの検出値に応じて前記循環ポンプの運転を制御して、前記循環配管内圧力を一定に保ち、
前記抜き出し管には、指示信号に基づいて弁開度を調整し、所望の砥液流量とする流量制御手段と、砥液の流入を停止させる手段とを設けたことを特徴とする研磨装置。
A polishing apparatus in which a polishing unit that presses an object to be polished against a polishing tool and an abrasive liquid pipe that is connected to an external abrasive liquid supply device and supplies the polishing liquid to the polishing unit are accommodated in one housing. Because
A circulation pipe for circulating the abrasive liquid;
An extraction pipe for supplying the polishing liquid from the circulation pipe to a plurality of polishing apparatuses;
The circulation pipe is provided with a circulation pump that circulates the abrasive liquid, a back pressure valve that keeps the pressure in the circulation pipe at a predetermined pressure or more, and a pressure sensor, and the circulation pump according to a detection value of the pressure sensor Control the operation of the above, keeping the pressure in the circulation pipe constant,
A polishing apparatus, wherein the extraction pipe is provided with a flow rate control means for adjusting a valve opening degree based on an instruction signal to obtain a desired abrasive liquid flow rate and a means for stopping the inflow of the abrasive liquid.
前記流量制御手段は、空気圧力室と、該空気圧力室の空気圧力に応じて開閉する弁とを備え、前記砥液の流量を制御することを特徴とする請求項1に記載の研磨装置。  The polishing apparatus according to claim 1, wherein the flow rate control unit includes an air pressure chamber and a valve that opens and closes according to the air pressure in the air pressure chamber, and controls the flow rate of the abrasive liquid. 前記流量制御手段は、前記指示信号に基づいて電空変換器により前記空気圧力室の空気圧力を所定値にすることを特徴とする請求項1又は2に記載の研磨装置。  The polishing apparatus according to claim 1 or 2, wherein the flow rate control means sets the air pressure in the air pressure chamber to a predetermined value by an electropneumatic converter based on the instruction signal. 前記抜き出し管には、前記流量制御手段に洗浄液を供給する洗浄液配管が設けられていることを特徴とする請求項1ないし3のいずれかに記載の研磨装置。  4. The polishing apparatus according to claim 1, wherein the extraction pipe is provided with a cleaning liquid pipe for supplying a cleaning liquid to the flow rate control means. 研磨部と、これに砥液を供給する砥液供給手段と、前記研磨部と前記砥液供給手段との間に設けられた砥液循環配管と、前記砥液循環配管から前記研磨部へ延びる抜き出し管とを有する研磨システムを用い、
所望の濃度に砥液を希釈する工程と、
前記砥液循環配管には、砥液を循環させる循環ポンプと、前記循環配管内圧力を一定圧力以上に保つ背圧弁と、圧力センサとが設けられ、該圧力センサの検出値に応じて前記循環ポンプの運転を制御して、前記循環配管内圧力を一定に保ちつつ、希釈された砥液を前記砥液循環配管内で循環させる工程と、
前記砥液循環配管から砥液を前記研磨部に向けて抜き出す工程と、
予め設定された砥液供給量に応じた指示信号に基づいて弁開度を調整し、所望の砥液流量を前記研磨部に供給する工程とを行なうことを特徴とする半導体ウエハの研磨方法。
A polishing part, a polishing liquid supply means for supplying a polishing liquid to the polishing part, a polishing liquid circulation pipe provided between the polishing part and the polishing liquid supply means, and extends from the polishing liquid circulation pipe to the polishing part. Using a polishing system having an extraction tube,
Diluting the abrasive liquid to a desired concentration;
The abrasive fluid circulation pipe is provided with a circulation pump that circulates the abrasive fluid, a back pressure valve that keeps the pressure in the circulation pipe above a certain level, and a pressure sensor, and the circulation according to the detected value of the pressure sensor. Controlling the operation of the pump to circulate the diluted abrasive liquid in the abrasive liquid circulation pipe while keeping the pressure in the circulation pipe constant;
Extracting the abrasive liquid from the abrasive liquid circulation pipe toward the polishing section;
A method for polishing a semiconductor wafer, comprising: adjusting a valve opening degree based on an instruction signal corresponding to a preset abrasive liquid supply amount and supplying a desired abrasive liquid flow rate to the polishing unit.
さらに、前記砥液循環配管から前記研磨部への砥液の抜き出しを停止し、前記抜き出し配管を洗浄する工程を行なうことを特徴とする請求項に記載の半導体ウエハの研磨方法。6. The method for polishing a semiconductor wafer according to claim 5 , further comprising the step of stopping the extraction of the abrasive liquid from the abrasive liquid circulation pipe to the polishing section and cleaning the extraction pipe.
JP31621697A 1997-10-31 1997-10-31 Polishing apparatus and semiconductor wafer polishing method Expired - Fee Related JP3801325B2 (en)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP31621697A JP3801325B2 (en) 1997-10-31 1997-10-31 Polishing apparatus and semiconductor wafer polishing method
DE69830121T DE69830121T2 (en) 1997-10-31 1998-10-29 Polishing slurry dispenser
EP98120520A EP0913233B1 (en) 1997-10-31 1998-10-29 Polishing solution supply system
US09/181,993 US6293849B1 (en) 1997-10-31 1998-10-29 Polishing solution supply system
SG1998004391A SG75889A1 (en) 1997-10-31 1998-10-30 Polishing solution supply system
TW087118017A TW416893B (en) 1997-10-31 1998-10-30 Polishing solution supply system and a methed for polishing a semiconductor wafer by using a polishing system having the polishing solution supply system

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP31621697A JP3801325B2 (en) 1997-10-31 1997-10-31 Polishing apparatus and semiconductor wafer polishing method

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JPH11138438A JPH11138438A (en) 1999-05-25
JP3801325B2 true JP3801325B2 (en) 2006-07-26

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Publication number Priority date Publication date Assignee Title
JP3748731B2 (en) 1999-03-26 2006-02-22 株式会社荏原製作所 Abrasive fluid supply device
JP4004795B2 (en) * 2001-12-28 2007-11-07 松下環境空調エンジニアリング株式会社 Polishing fluid supply device
KR100673787B1 (en) * 2005-10-28 2007-01-24 동부일렉트로닉스 주식회사 Slurry providing device for cmp equipment
JP5295645B2 (en) * 2008-06-04 2013-09-18 株式会社ディスコ Cutting equipment
CN115781521B (en) * 2022-11-08 2023-06-13 广东睿华光电科技有限公司 Polishing agent spray pipe structure for anti-glare glass production

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