JP3752400B2 - 能動素子を含む分布定数線路 - Google Patents

能動素子を含む分布定数線路 Download PDF

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Publication number
JP3752400B2
JP3752400B2 JP15117499A JP15117499A JP3752400B2 JP 3752400 B2 JP3752400 B2 JP 3752400B2 JP 15117499 A JP15117499 A JP 15117499A JP 15117499 A JP15117499 A JP 15117499A JP 3752400 B2 JP3752400 B2 JP 3752400B2
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JP
Japan
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output line
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Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP15117499A
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English (en)
Japanese (ja)
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JP2000340788A5 (https=
JP2000340788A (ja
Inventor
紀雄 日高
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Fujitsu Ltd
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Fujitsu Ltd
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Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP15117499A priority Critical patent/JP3752400B2/ja
Priority to US09/579,271 priority patent/US6329231B1/en
Publication of JP2000340788A publication Critical patent/JP2000340788A/ja
Publication of JP2000340788A5 publication Critical patent/JP2000340788A5/ja
Application granted granted Critical
Publication of JP3752400B2 publication Critical patent/JP3752400B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/40—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels
    • H10D30/47—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels having two-dimensional [2D] charge carrier gas channels, e.g. nanoribbon FETs or high electron mobility transistors [HEMT]
    • H10D30/471—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT]
    • H10D30/473—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having confinement of carriers by multiple heterojunctions, e.g. quantum well HEMT
    • H10D30/4732—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having confinement of carriers by multiple heterojunctions, e.g. quantum well HEMT using Group III-V semiconductor material
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/482—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes for individual devices provided for in groups H10D8/00 - H10D48/00, e.g. for power transistors
    • H10W20/483—Interconnections over air gaps, e.g. air bridges
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W44/00—Electrical arrangements for controlling or matching impedance
    • H10W44/20—Electrical arrangements for controlling or matching impedance at high-frequency [HF] or radio frequency [RF]

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  • Junction Field-Effect Transistors (AREA)
  • Waveguides (AREA)
JP15117499A 1999-05-31 1999-05-31 能動素子を含む分布定数線路 Expired - Fee Related JP3752400B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP15117499A JP3752400B2 (ja) 1999-05-31 1999-05-31 能動素子を含む分布定数線路
US09/579,271 US6329231B1 (en) 1999-05-31 2000-05-26 Distributed constant circuit with active element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15117499A JP3752400B2 (ja) 1999-05-31 1999-05-31 能動素子を含む分布定数線路

Publications (3)

Publication Number Publication Date
JP2000340788A JP2000340788A (ja) 2000-12-08
JP2000340788A5 JP2000340788A5 (https=) 2004-12-02
JP3752400B2 true JP3752400B2 (ja) 2006-03-08

Family

ID=15512935

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15117499A Expired - Fee Related JP3752400B2 (ja) 1999-05-31 1999-05-31 能動素子を含む分布定数線路

Country Status (2)

Country Link
US (1) US6329231B1 (https=)
JP (1) JP3752400B2 (https=)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3752400B2 (ja) * 1999-05-31 2006-03-08 富士通株式会社 能動素子を含む分布定数線路
US7451942B2 (en) * 2003-10-20 2008-11-18 Digicon, Inc. Direct fuel injector assembly for a compressible natural gas engine
US7157378B2 (en) * 2004-07-06 2007-01-02 Intel Corporation Method for making a semiconductor device having a high-k gate dielectric layer and a metal gate electrode
EP2040299A1 (en) * 2007-09-12 2009-03-25 Forschungsverbund Berlin e.V. Electrical devices having improved transfer characteristics and method for tailoring the transfer characteristics of such an electrical device
USD1059409S1 (en) * 2023-05-31 2025-01-28 Apple Inc. Display screen or portion thereof with graphical user interface

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63216380A (ja) * 1987-03-05 1988-09-08 Fujitsu Ltd 半導体装置
JPH08130419A (ja) * 1994-11-01 1996-05-21 Fujitsu Ltd 増幅器並びにこれを有する受信機及び通信機
JPH10261925A (ja) * 1997-03-17 1998-09-29 Toshiba Corp 高周波増幅器
JP3752400B2 (ja) * 1999-05-31 2006-03-08 富士通株式会社 能動素子を含む分布定数線路

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Publication number Publication date
US6329231B1 (en) 2001-12-11
JP2000340788A (ja) 2000-12-08

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