JP3589406B2 - Substrate processing system - Google Patents

Substrate processing system Download PDF

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Publication number
JP3589406B2
JP3589406B2 JP2000315295A JP2000315295A JP3589406B2 JP 3589406 B2 JP3589406 B2 JP 3589406B2 JP 2000315295 A JP2000315295 A JP 2000315295A JP 2000315295 A JP2000315295 A JP 2000315295A JP 3589406 B2 JP3589406 B2 JP 3589406B2
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Japan
Prior art keywords
film thickness
wafer
substrate
processing system
coating
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Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
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JP2000315295A
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Japanese (ja)
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JP2001196298A (en
Inventor
雄二 福田
久仁恵 緒方
Original Assignee
東京エレクトロン株式会社
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Priority to JP30221499 priority
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Priority to JP2000315295A priority patent/JP3589406B2/en
Publication of JP2001196298A publication Critical patent/JP2001196298A/en
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Description

[0001]
TECHNICAL FIELD OF THE INVENTION
The present invention relates to a substrate processing system.
[0002]
[Prior art]
For example, in a photolithography process in a semiconductor device manufacturing process, a resist coating process for forming a resist film on a surface of a semiconductor wafer (hereinafter, “wafer”), an exposure process for irradiating a wafer with a pattern and exposing the wafer, On the other hand, development processing for performing development is performed. Each processing apparatus that performs these processes, except for the exposure processing apparatus, is put together as one system to constitute a coating and developing processing system.
[0003]
Here, in order to preferably perform a predetermined lithography process, it is important that the resist film applied on the wafer before the pattern exposure processing has a predetermined thickness. Therefore, the thickness of the resist film on the wafer is inspected before the pattern is exposed, and when the thickness exceeds a predetermined allowable value, for example, the number of rotations of the wafer of the coating apparatus is adjusted based on the inspection. .
[0004]
Conventionally, inspection of the thickness of a resist film has been performed by an operator who extracts a wafer before exposure processing from a coating and developing system and uses a film thickness measuring device for inspection provided separately from the coating and developing system. Was.
[0005]
[Problems to be solved by the invention]
However, it is necessary to transport the wafer from the coating and developing system to the apparatus for inspecting the film thickness, which is troublesome and time consuming. Further, the wafer may be contaminated during the reciprocation.
[0006]
SUMMARY OF THE INVENTION The present invention has been made in view of the above circumstances, and a film thickness measuring means is provided in a peripheral exposure apparatus that can use an existing mechanism in a coating and developing processing system, so that the film thickness of a resist film on a wafer can be measured in the same system. Its purpose is to inspect.
[0007]
[Means for Solving the Problems]
According to the present invention, there is provided an application device for applying a processing liquid onto a substrate, and a mounting table that is rotatable and movable in at least one direction, and irradiates a peripheral portion of the substrate on the mounting table. A peripheral exposure device that irradiates light from the substrate to expose the coating film on the substrate,
The peripheral exposure apparatus includes a film thickness measuring means having a sensor member for measuring the film thickness of the coating film in a casing, and forms an airflow from one side to the other side across the substrate in the casing. And a gas flow forming means for replacing an atmosphere in the exposure apparatus , wherein the sensor member is located at least upstream of the irradiation section in the gas flow. Is done.
[0008]
Generally, the peripheral exposure apparatus has a mounting table that is rotatable and movable in at least one direction. Focusing on this point, in the substrate processing system according to the first aspect, for example, the film thickness measurement at a predetermined position on the substrate can be suitably performed by using such a mechanism. It is not necessary to provide an apparatus having the same separately from the substrate processing system.
[0010]
In the present invention, since the sensor member of the film thickness measuring means is located upstream of the airflow from the irradiation unit, for example, at the time of peripheral exposure, organic substances generated from the coating film on the substrate stain the sensor member. Can be prevented.
[0011]
The sensor member may include a protection member that covers the sensor member. Thus, it is possible to prevent the sensor unit from being contaminated when the sensor unit is not used.
[0012]
Further, the sensor member may be retractable from the substrate. This makes it possible to prevent the sensor unit from being contaminated by retreating the sensor member from the easily contaminated substrate.
[0013]
The light source of the sensor member may be a laser beam or a light emitting diode.
[0014]
In the case of laser light, since a laser light having a single wavelength is used, more accurate film thickness measurement can be performed. Also use a light emitting diode as a light source of the sensor member, the power consumption is reduced, the cost reduction can be achieved.
[0015]
More preferably, the film thickness measuring means has a function of measuring the line width of the pattern formed on the substrate.
For example, such a function can be provided by using the same device as the hardware configuration having the film thickness measurement. For example, several patterns of a certain line width are registered, and the reflection pattern when irradiating the substrate is compared with the registered line width pattern in the same manner as the film thickness measurement, thereby obtaining the film thickness. The line width of the pattern formed on the substrate can be measured with the same device as the measuring device. This can be achieved by exchanging software. By adding such a function, not only the film thickness but also the line width of the pattern after development can be measured, and the yield can be improved.
[0016]
Further, if a reflecting portion for reflecting light from the sensor member is provided on the mounting table on which the substrate is mounted, more preferable effects can be obtained. That is, by irradiating the light to the reflecting portion with no substrate mounted thereon and measuring the intensity of the reflected light, it is possible to know the deterioration of the light source. Therefore, by performing such intensity measurement periodically, the measurement accuracy of the film thickness can be maintained in a good state.
[0027]
BEST MODE FOR CARRYING OUT THE INVENTION
FIG. 1 is a plan view of a coating and developing processing system 1 as a substrate processing system according to the present embodiment, FIG. 2 is a front view of the coating and developing processing system 1, and FIG. FIG.
[0028]
As shown in FIG. 1, the coating and developing processing system 1 carries, for example, 25 wafers W into and out of the coating and developing processing system 1 in units of cassettes, and loads and unloads wafers W into and from the cassette C. A cassette station 2, a processing station 3 in which various processing apparatuses for performing predetermined processing in a single-wafer manner in a coating and developing process are arranged in multiple stages, and an exposure apparatus 52 provided adjacent to the processing station 3 And an interface unit 4 for transferring the wafer W between the two.
[0029]
In the cassette station 2, a plurality of cassettes C can be placed in a row in the X direction (vertical direction in FIG. 1) at predetermined positions on a cassette placing table 5 serving as a placing section. A wafer carrier 7 that can be transported in the cassette arrangement direction (X direction) and the wafer arrangement direction (Z direction; vertical direction) of the wafers W accommodated in the cassette C is movable along the transfer path 8. Provided so that each cassette C can be selectively accessed.
[0030]
The wafer carrier 7 is configured so as to be able to access the alignment device 32 and the extension device 33 belonging to the third processing device group G3 on the processing station 3 side as described later.
[0031]
In the processing station 3, a main transfer device 13 is provided at the center thereof, and various processing devices are arranged in multiple stages around the main transfer device 13 to form a processing device group. In the coating and developing system 1, four processing unit groups G1, G2, G3, G4 are arranged, and the first and second processing unit groups G1, G2 are arranged on the front side of the developing system 1. The third processing unit group G3 is disposed adjacent to the cassette station 2, and the fourth processing unit group G4 is disposed adjacent to the interface unit 4. Further, a fifth processing unit group G5 shown by a broken line as an option can be separately arranged on the back side.
[0032]
In the first processing unit group G1, as shown in FIG. 2, two types of spinner type processing units, for example, a resist coating unit 15 for coating and processing a resist on a wafer W, and a developing solution to the wafer W are supplied. Developing devices 16 are arranged in two stages in order from the bottom. Similarly, in the case of the second processing unit group G2, the resist coating unit 17 and the development processing unit 18 are stacked in two stages from the bottom in the same manner.
In the third processing unit group G3, as shown in FIG. 3, a cooling device 30 for cooling the wafer W, an adhesion device 31 for improving the fixability between the resist solution and the wafer W, and alignment of the wafer W are performed. An alignment device 32, an extension device 33 for holding the wafer W on standby, pre-baking devices 34 and 35 for performing a heating process before the exposure process, and post-baking devices 36 and 37 for performing a heating process after the development process, for example, in order from the bottom, for example, in eight stages It is overlaid.
[0034]
In the fourth processing unit group G4, for example, the cooling device 40, the extension cooling device 41 for naturally cooling the placed wafer W, the extension device 42, the cooling device 43, and the post-exposure baking for heating the exposed wafer W are performed. The devices 44 and 45, the post-baking devices 46 and 47, and the like are stacked in, for example, eight stages from the bottom.
[0035]
A peripheral exposure device that irradiates a peripheral portion of the wafer W, which will be described later, with light, exposes a resist film formed on the wafer W, and measures the thickness of the resist film if necessary. 51 are provided. Further, the wafer carrier 50 provided at the center of the interface unit 4 is used for the extension cooling device 41, the extension device 42, the peripheral exposure device 51, and the exposure device 52 indicated by a broken line belonging to the fourth processing device group G4. It is configured to be accessible.
[0036]
Next, the configuration of the peripheral exposure device 51 having a film thickness measuring means will be described with reference to FIGS.
[0037]
A mounting table 61 for holding the wafer W by suction is provided in a casing 60 of the peripheral exposure device 51. The mounting table 61 is rotatable by a driving mechanism 62 having a built-in motor, for example. Further, the mounting table 61 can move in the longitudinal direction (horizontal direction in FIG. 5) because the driving mechanism 62 is movable on the rail 63 extending in the longitudinal direction (horizontal direction in FIG. 5). Above the wafer W, there are provided a film thickness sensor 64 as a sensor member for sensing the film thickness of a resist film as a coating film by laser light, and an irradiation unit 65 to which light for exposure is irradiated.
[0038]
An air intake fan 66 is mounted on one side of the casing 60, and an air outlet 72 is provided on the other side, whereby an airflow is formed from the fan 66 toward the air outlet 72. The atmosphere of the device 51 is replaced. The film thickness sensor 64 is disposed upstream of the irradiation unit 65 in this airflow. Further, the film thickness sensor 64 is suspended by an arm 67, and the arm 67 is rotatably mounted on a rotation shaft 67a installed near the wall of the casing 60 as shown in FIG. Therefore, when the arm 67 is rotated by a driving mechanism (not shown), the film thickness sensor 64 can be retracted from above the wafer W.
[0039]
Further, the film thickness sensor 64 is connected to a film thickness sensor control device 68 provided outside the casing 60. The film thickness sensor control device 68 converts the light detected by the film thickness sensor 64 into data and stores the data. Then, the thickness of the resist film is measured based on the data. The irradiation unit 65 is provided fixed to the casing 60. The irradiating section 65 irradiates the wafer with light from a light source section (not shown) via a light guide path 69 to expose the resist film around the wafer W. Further, a laser light source 70 for transmitting light for detecting an accurate position of the wafer and a CCD sensor 71 for detecting the light are provided so as to sandwich the wafer W from above and below.
[0040]
Next, the process of the test wafer W in the peripheral exposure apparatus 51 configured as described above will be described together with a series of coating and developing processes.
[0041]
First, the wafer carrier 7 takes out one unprocessed wafer W from the cassette C and carries it into the alignment device 32 belonging to the third processing device group G3. Next, the wafer W whose alignment has been completed by the alignment device 32 is transferred by the main transfer device 13 to the resist coating device 15 or 17 via the adhesion device 31 and the cooling device 30. Then, a resist liquid is applied to the upper surface of the wafer W to form a resist film. Thereafter, the wafer W is sequentially transported to the pre-baking device 33 or 34 and the extension cooling device 41, where a predetermined process is performed.
[0042]
Next, the wafer W is taken out of the extension cooling device 41 by the wafer transfer body 50, and then transferred to the peripheral exposure device 51.
[0043]
At this time, in the peripheral exposure device 51, the fan 66 is operated, an airflow is formed from the fan 66 to the exhaust port 72, and even if impurities such as organic substances are generated, the impurities can be discharged from the casing 60. Moreover, since the film thickness sensor 64 is located on the upstream side of the airflow, the formation of the airflow prevents contamination.
[0044]
The wafer W transferred to the peripheral exposure device 51 is mounted on the mounting table 61 and held by suction. The coordinates of the outer peripheral position of the wafer W held on the mounting table 61 are recognized by the laser light source 70 and the CCD sensor 71, and whether or not the wafer W is mounted at a predetermined position is confirmed.
[0045]
Next, measurement of the thickness of the resist film will be described with reference to FIGS. First, the film thickness sensor 64 retracted from above the wafer W as shown by a broken line in FIG. 6 is moved by the arm 67 to the center of the wafer W. Next, while the wafer W is moved in the X-axis direction (right direction in FIG. 5) by the driving mechanism 62, laser light is irradiated from the film thickness sensor 64, and the light reflected by the resist film is again reflected on the film thickness sensor. Detect at 64.
[0046]
The data detected by the film thickness sensor 64 is sent to the film thickness sensor control device as needed and stored. Eventually, when the film thickness sensor 64 is positioned above the peripheral portion of the wafer W, the wafer W stops, and the film thickness measurement also stops. In the above process, the film thickness measurement of one radius of the wafer W is performed ((a) in FIG. 7, the arrows indicate the measurement trajectory of the film thickness sensor 64, and the encircled numbers indicate the film thickness measurement) Is shown in the order). Next, the wafer W is rotated by 90 degrees in the θ direction (counterclockwise) by the drive mechanism 62 (FIG. 7B). Next, the wafer W is moved in the negative direction of the X-axis (left direction in FIG. 5), and the film thickness is measured by the film thickness sensor 64 in the same manner. Then, when the film thickness sensor 64 moves to the center of the wafer W, the wafer W is stopped again, and the film thickness measurement is also stopped (FIG. 7C). The above measurement is performed every 90 degrees. Finally, as shown in FIG. 7 (d), all the film thicknesses on the orthogonal diameter are measured, and the film thickness measurement is completed when the wafer W makes one round. FIG. 7 (e)).
[0047]
Next, the wafer W is moved below the irradiation unit 65 by the driving mechanism 62 and stopped at a predetermined position. At this time, the arm 67 suspending the film thickness sensor 64 is rotated by a driving mechanism (not shown), and the film thickness sensor 64 is retracted from above the wafer W. Thereafter, the wafer W is rotated according to a predetermined recipe, and the resist coating film around the wafer W is exposed to the laser beam from the irradiation unit 65 for a specified width.
[0048]
The thickness of the wafer W on which the peripheral exposure processing has been completed is measured again by the above-described process. At that time, the portion of the wafer W that has been subjected to the peripheral exposure processing is also measured, and the data is stored in the film thickness sensor control device 68, and it is inspected from the measured film thickness whether the exposed portion is located at a predetermined position. .
[0049]
The wafer W for which the second film thickness measurement has been completed is carried out of the exposure apparatus 51 by the carrier 50, and the inspection of the test wafer W is completed.
[0050]
As described above, in the coating and developing processing system 1 according to the present embodiment, since the peripheral exposure device 51 is provided with the film thickness measuring means, the wafer is transferred from the coating and developing system 1 to the inspection of the film thickness of the resist film. There is no need to remove it, and inspection can be performed during a series of processing. Therefore, unnecessary labor and time required for transferring the wafer W can be reduced. Since the peripheral exposure device 51 has a mounting table 61 that is rotatable and movable in at least one direction, which is originally required for film thickness measurement, it is necessary to provide a film thickness measuring means using an existing mechanism. Therefore, the film thickness can be measured at an arbitrary point on the wafer W, and the cost can be reduced. Further, it is possible to determine not only whether the resist film is properly formed but also whether or not the peripheral exposure has been properly performed by performing the film thickness measurement before and after the peripheral exposure processing. Further, since the film thickness sensor 64 for measuring the film thickness is provided on the upstream side of the airflow with respect to the irradiation unit 65 for performing exposure, it is possible to prevent the film thickness sensor 64 from being contaminated and the measurement performance from being reduced. Further, since the arm 67 of the film thickness sensor 64 is rotatable and can be retracted from above the wafer W during the peripheral exposure, the contamination of the film thickness sensor 64 is also prevented from this point.
[0051]
Here, another embodiment of the film thickness measuring process as shown in FIG. 7 will be described. As a second embodiment, first, the start position of the film thickness measurement is set to a predetermined peripheral portion of the wafer W, and the film thickness sensor 64 operates in the same manner as in the first embodiment, and Wait at. Then, as shown in FIG. 8, the film thickness is measured by the film thickness sensor 64 fixed above the wafer W while moving the wafer W in the negative direction of the X-axis (the left direction in FIG. 5) by the driving mechanism 62. I do. Then, when the film thickness sensor 64 is located at the center of the wafer W, the wafer W is temporarily stopped, and the film thickness measurement is also stopped (FIG. 8A). Next, the wafer W is rotated by 180 degrees in the θ direction (counterclockwise) by the drive mechanism 62 (FIG. 8B). Next, the wafer W is moved in the positive direction of the X-axis (the right direction in FIG. 5), and the film thickness is measured by the film thickness sensor 64 in the same manner. When the film thickness sensor 64 is located above the peripheral portion of the wafer W, the wafer W is stopped again, and the measurement of the film thickness is also stopped (FIG. 8C). This means that the film thickness on one diameter of the wafer W has been measured in the above steps. Further, the sample is rotated by 90 degrees in the θ direction by the drive mechanism 62, and one diameter measurement is performed in the same manner as in the above steps ((a) to (c) of FIG. 8) ((d) and ( e)). As a result, as shown in FIG. 8E, the film thickness on the orthogonal diameter is measured, and when the wafer W is finally returned to the start position of the film thickness measurement, the film thickness measurement ends (( f)). The same effects as in the first embodiment can be obtained by performing the above steps and measuring the film thickness.
[0052]
Further, a third embodiment will be described. As shown in FIG. 9, first, the film thickness sensor 64 is moved to the center of the wafer W and waits. Therefore, the film thickness at the center of the wafer W is measured by the film thickness sensor 64 (FIG. 9A). Then, the wafer W is moved by a predetermined distance in the X direction (the right direction in FIG. 5) and stopped (FIG. 9B). Therefore, the film thickness is measured while being rotated in the θ direction (counterclockwise) by the drive mechanism 62, and when the film is rotated 360 degrees, the film thickness measurement and the rotation are stopped (FIG. 9C). Thereafter, the wafer W is again moved in the X direction (right direction in FIG. 5) by a predetermined distance and then stopped, and similarly, the wafer W is rotated to measure the film thickness on the same circumference ( FIG. 9D). By repeating the above steps, the film thickness is measured concentrically toward the outside of the wafer W, and when the film thickness at the peripheral portion of the wafer W is measured, the measurement of the film thickness is completed ((FIG. e)).
[0053]
In the third embodiment, the film thickness is measured concentrically from the center of the wafer W to the outside, but the film thickness may be measured from the outside to the center. The film thickness measurement is performed by irradiating a laser beam from the film thickness sensor 64 and detecting the light reflected by the resist film again by the film thickness sensor 64, even when the wafer W is moving. , May be temporarily stopped during measurement. In the third embodiment, the same effect as in the first embodiment can be obtained.
[0054]
A cover 75 as a protection member as shown in FIG. 10 may be attached to the film thickness sensor 64. The cover 75 is configured to be open during the film thickness measurement and closed at other times. The cover 75 is opened and closed by a drive mechanism (not shown) and is controlled by a film thickness sensor control device 68. If the cover 75 is attached, the contamination of the film thickness sensor 64 can be further reliably prevented.
[0055]
In the above embodiment, the film thickness is measured before and after the peripheral exposure processing. However, the film thickness measurement may be performed only before the peripheral exposure processing or only after the peripheral exposure processing.
[0056]
The signal from the film thickness sensor 64 was sent to the film thickness sensor controller 68 and processed to output a film thickness value. However, by changing the program of the film thickness sensor controller 68, The line width of the pattern formed on the wafer W can also be obtained.
[0057]
To explain the principle, a signal (for example, the intensity of reflected light) from the film thickness sensor 64 with respect to the line width is stored in advance in association with a line width of a certain numerical value. Thus, the line width on the wafer W can be obtained by comparing the signal from the film thickness sensor 64 with the stored data. In actually measuring the line width, it is more accurate to form a simple test pattern on the surface of the measurement wafer and measure the line width of the measurement wafer.
[0058]
By the way, the light source used for the film thickness sensor 64 deteriorates with time, and it is inevitable that the intensity of the irradiated light also decreases accordingly. If the intensity of light from the film thickness sensor 64 decreases, it is difficult to accurately measure the film thickness. Therefore, as shown in FIG. 11, a reflector 61a is provided on a mounting table 61 on which the wafer W is mounted. The reflector 61a is preferably embedded in the mounting table 61 so as not to hinder the mounting of the wafer W.
[0059]
Then, in a state where the wafer W is not placed on a regular basis, the film thickness sensor 64 is moved onto the mounting table 61, and the light for measurement is irradiated toward the reflector 61a. Then, the intensity of light reflected from the reflector 61a can be measured. When the light source deteriorates, the intensity of the reflected light also decreases. Therefore, the degree of deterioration of the light source can be known by measuring the intensity of the reflected light. By providing the reflection object 61a in the film thickness sensor 64 in this way, it is possible to know in advance the deterioration of the light source of the film thickness sensor 64, the suitability of use, the necessity of replacement, and the like.
[0060]
In the above-described film thickness measurement process, it is preferable to use a test wafer as the wafer W actually used for the film thickness measurement. A plurality of test wafers are stored in a dedicated cassette C in advance and are distinguished from production wafers W. Then, the timing of loading a test wafer into the coating and developing system 1 is preferably after a lot of production wafers W is cut or a predetermined number of wafers W are coated and developed.
[0061]
For example, after performing the coating and developing process on the production wafer W of a certain lot, before performing the coating and developing process on the production wafer W of the next lot, the test wafer is transferred to the coating and developing processing system 1. The resist is applied, the resist is applied by the resist coating device 15 or 17 and baked, and then the film thickness is measured. As a result of the measurement, when the film thickness is within a predetermined allowable range, the supply of the production wafer W to the coating and developing system 1 is started.
[0062]
As a result of the measurement, if the film thickness is within a predetermined allowable range, necessary corrections such as the temperature of the resist solution, the rotation speed, and the temperature of the airflow are made to the resist coating device 15 or 17 which has actually performed the coating process. Correction is performed for such as. After the correction, the resist coating device 15 or 17 performs a resist coating process on another test wafer W, and then measures the film thickness.
[0063]
Then, as a result of the measurement, when the film thickness is within the predetermined allowable range, the introduction of the production wafer W into the coating and developing system 1 is started. As a result of the measurement, if the film thickness is within a predetermined allowable range, necessary corrections are again performed on the resist coating apparatus 15 or 17 which has actually performed the coating process, and thereafter, the film thickness value falls within the allowable range. Until it enters, the film thickness is measured on the test wafer.
[0064]
In this way, by checking the state of the resist coating devices 15 and 17 on the test wafer in advance, the resist coating process on the production wafer W can always be suitably performed.
[0065]
When the film thickness of the test wafer is measured, if it is within the allowable range, the program of the coating and developing processing system 1 is controlled so as to automatically start feeding the production wafer W, or the outside of the allowable range. In this case, if the NG signal is displayed on the display or the control panel of the system or an appropriate alarm is issued to stop the introduction of the production wafer W into the processing station 3, the defect of the production wafer W Can be prevented beforehand, and the operator can immediately make necessary corrections to the resist coating devices 15 and 17.
[0066]
Although the above-described embodiment is directed to a wafer processing system in a lithography step of a semiconductor wafer device manufacturing process, it can be applied to a processing system for a substrate other than a semiconductor wafer, for example, an LCD substrate.
[0067]
【The invention's effect】
According to the present invention, the thickness measurement of the coating film can be performed in the substrate processing system, and there is no need to separately provide a film thickness measuring device. Therefore, when inspecting the film thickness of the coating film on the substrate, the time required for transport from the substrate processing system to the film thickness measuring device can be reduced. Further, since the mechanism of the conventional peripheral exposure apparatus can be used as it is, the degree of freedom in measuring the film thickness is large and the cost is reduced.
[0068]
Further, at the time of exposure, impurities such as organic substances generated from the coating film on the substrate can be prevented from contaminating the sensor section.
[0069]
According to the fourth aspect of the invention, since a laser beam having a single wavelength is used, more accurate film thickness measurement can be performed.
[0070]
According to the fifth aspect of the present invention, since the light emitting diode is used as the light source of the sensor member, power consumption can be reduced, which leads to cost reduction. According to the invention of claim 6 , the line width of the pattern can be measured, which is convenient. According to the seventh aspect of the present invention, it is possible to know in advance that the capability of the film thickness measuring means has decreased.
[Brief description of the drawings]
FIG. 1 is a plan view showing the appearance of a coating and developing system according to an embodiment.
FIG. 2 is a front view of the coating and developing processing system of FIG.
FIG. 3 is a rear view of the coating and developing system of FIG. 1;
FIG. 4 is a perspective view of the inside of a peripheral exposure apparatus in the coating and developing processing system according to the exemplary embodiment;
FIG. 5 is an explanatory longitudinal sectional view showing a configuration of a peripheral exposure apparatus in the coating and developing processing system according to the exemplary embodiment;
6 is an explanatory view of a cross section showing the configuration of the peripheral exposure apparatus of FIG. 5;
FIG. 7 is an explanatory diagram showing a time series of a film thickness measurement route on a wafer performed by the peripheral exposure apparatus according to the first embodiment.
FIG. 8 is an explanatory diagram showing a time series of a film thickness measurement route on a wafer performed by a peripheral exposure apparatus according to a second embodiment.
FIG. 9 is an explanatory diagram showing in chronological order a film thickness measurement route on a wafer performed by a peripheral exposure apparatus according to a third embodiment.
FIG. 10 is an explanatory diagram when a cover of the film thickness sensor is attached to the film thickness sensor in the peripheral exposure apparatus according to the present embodiment.
FIG. 11 is a perspective view showing a state where a reflection object is provided on a mounting table.
[Explanation of symbols]
1 Coating and developing system 51 Peripheral exposure device 63 Rail 64 Film thickness sensor 65 Irradiation unit W Wafer

Claims (7)

  1. A coating device for coating the processing liquid on the substrate,
    A peripheral exposure apparatus having a mounting table rotatable and movable in at least one direction, and irradiating light from an irradiating unit to a peripheral portion of the substrate on the mounting table to expose a coating film on the substrate; When,
    A substrate processing system comprising:
    The peripheral exposure apparatus has a film thickness measuring means having a sensor member for measuring the film thickness of the coating film in a casing, and further forms an airflow from one side to the other side across the substrate in the casing. Airflow forming means for replacing the atmosphere in the exposure apparatus,
    The substrate processing system, wherein the sensor member is located at least upstream of the irradiation unit in the airflow .
  2. 2. The substrate processing system according to claim 1, further comprising a protection member that covers the sensor member .
  3. 3. The substrate processing system according to claim 1 , wherein the sensor member is retractable from above the substrate.
  4. 4. The substrate processing system according to claim 1, wherein a light source of the sensor member is a laser beam .
  5. 4. The substrate processing system according to claim 1, wherein the light source of the sensor member is a light emitting diode .
  6. The film thickness measuring means, characterized in that it comprises a function of finding the line width of a pattern formed on a substrate, the substrate processing system according to claim 1.
  7. 7. The substrate processing apparatus according to claim 1, wherein the sensor member has a light source for measurement, and has a reflector on the mounting table for reflecting light from the light source. system.
JP2000315295A 1999-10-25 2000-10-16 Substrate processing system Expired - Fee Related JP3589406B2 (en)

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JP11-302214 1999-10-25
JP30221499 1999-10-25
JP2000315295A JP3589406B2 (en) 1999-10-25 2000-10-16 Substrate processing system

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