JP3490906B2 - Semiconductor device and manufacturing method thereof - Google Patents

Semiconductor device and manufacturing method thereof

Info

Publication number
JP3490906B2
JP3490906B2 JP26876398A JP26876398A JP3490906B2 JP 3490906 B2 JP3490906 B2 JP 3490906B2 JP 26876398 A JP26876398 A JP 26876398A JP 26876398 A JP26876398 A JP 26876398A JP 3490906 B2 JP3490906 B2 JP 3490906B2
Authority
JP
Grant status
Grant
Patent type
Prior art keywords
bonding
wire
stitch
ball
semiconductor device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP26876398A
Other languages
Japanese (ja)
Other versions
JP2000101147A (en )
Inventor
力 鎌田
Original Assignee
日亜化学工業株式会社
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Grant date

Links

Classifications

    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321Disposition
    • H01L2224/32151Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32225Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321Disposition
    • H01L2224/32151Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32245Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321Disposition
    • H01L2224/32151Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32245Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/32257Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic the layer connector connecting to a bonding area disposed in a recess of the surface of the item
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/44Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/44Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001Core members of the connector
    • H01L2224/4501Shape
    • H01L2224/45012Cross-sectional shape
    • H01L2224/45015Cross-sectional shape being circular
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/44Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001Core members of the connector
    • H01L2224/45099Material
    • H01L2224/451Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45117Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
    • H01L2224/45124Aluminium (Al) as principal constituent
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/44Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001Core members of the connector
    • H01L2224/45099Material
    • H01L2224/451Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144Gold (Au) as principal constituent
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48257Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a die pad of the item
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484Connecting portions
    • H01L2224/48455Details of wedge bonds
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484Connecting portions
    • H01L2224/48463Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H01L2224/48465Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4899Auxiliary members for wire connectors, e.g. flow-barriers, reinforcing structures, spacers, alignment aids
    • H01L2224/48996Auxiliary members for wire connectors, e.g. flow-barriers, reinforcing structures, spacers, alignment aids being formed on an item to be connected not being a semiconductor or solid-state body
    • H01L2224/48997Reinforcing structures
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491Disposition
    • H01L2224/49105Connecting at different heights
    • H01L2224/49107Connecting at different heights on the semiconductor or solid-state body
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732Location after the connecting process
    • H01L2224/73251Location after the connecting process on different surfaces
    • H01L2224/73265Layer and wire connectors
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/78Apparatus for connecting with wire connectors
    • H01L2224/7825Means for applying energy, e.g. heating means
    • H01L2224/783Means for applying energy, e.g. heating means by means of pressure
    • H01L2224/78301Capillary
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/852Applying energy for connecting
    • H01L2224/85201Compression bonding
    • H01L2224/85205Ultrasonic bonding
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/85909Post-treatment of the connector or wire bonding area
    • H01L2224/85951Forming additional members, e.g. for reinforcing
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151Die mounting substrate
    • H01L2924/153Connection portion
    • H01L2924/1531Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface
    • H01L2924/15313Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface being a land array, e.g. LGA
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151Die mounting substrate
    • H01L2924/156Material
    • H01L2924/157Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151Die mounting substrate
    • H01L2924/156Material
    • H01L2924/15786Material with a principal constituent of the material being a non metallic, non metalloid inorganic material
    • H01L2924/15787Ceramics, e.g. crystalline carbides, nitrides or oxides
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151Die mounting substrate
    • H01L2924/156Material
    • H01L2924/1579Material with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181Encapsulation

Description

【発明の詳細な説明】 【0001】 【発明の属する技術分野】本発明は半導体素子の電極とリード電極とをワイヤにより電気的に接続させた半導体装置及びその製造方法に係わり、特に、ステッチボンディング部の接続信頼性が高くワイヤの断線が極めて少ない半導体装置及びその製造方法に関する。 BACKGROUND OF THE INVENTION [0001] [Technical Field of the Invention The present invention relates to a semiconductor device and a manufacturing method thereof electrically connected to the wires and the electrode and the lead electrode of the semiconductor element, in particular, stitch bonding connecting reliable wire breakage of parts relates to a very small semiconductor device and a manufacturing method thereof. 【0002】 【従来技術】半導体装置の一種である発光ダイオードは、取り扱いやすさやその発光を所望の方向に集光させたり発散させたりするなどの目的で半導体素子であるL [0002] which is one type light emitting diode of the prior art semiconductor device is a semiconductor device for the purpose of or to diverge or is condensed ease of handling and the emission in the desired direction L
EDチップを樹脂やガラスなどにより被覆させ形成させてある。 The ED chip are then formed by coating a resin or glass. そのため、絶縁性のモールド部材により被覆されたLEDチップは金線などのワイヤを介して接続されたリード電極により外部と電気的に接続させている。 Therefore, LED chips coated with an insulating molding member is electrically connected to the outside by wire connected to the lead electrodes via such gold. より具体的には砲弾型発光ダイオードは、半導体素子を介して一対に電極が設けられたLEDチップなどを利用して形成させてある。 More specifically, the bullet type light emitting diode, a pair to the electrode via the semiconductor element are then formed by utilizing an LED chip provided. 光素子であるLEDチップの裏面側電極は、マウントリードの先端上に設けられたカップ内にAgペーストによりダイボンディングし配置と共に電気的に接続されてある。 Backside electrode of the LED chip is an optical element, it is electrically connected with the die-bonding place by Ag paste in the cup provided on the mount lead tip. 【0003】他方、LEDチップの表面側電極とインナーリード先端の間とを金線によりワイヤボンディング接続してある。 [0003] On the other hand, a between the surface-side electrode and the inner lead tip of the LED chip are wire bonding connected by gold wire. ワイヤボンディングはLEDチップの表面側を第1ボンドとしてボールボンディングすると共にリード電極上に第2ボンドとしてステッチボンディングする。 Wire bonding stitch bonding the second bonding on the lead electrode as well as ball bonding surface side of the LED chip as the first bond. LEDチップ及び各リードフレームの先端にはLE LED chips and LE at the tip of each lead frame
Dチップからの光を集光させるモールド部材として砲弾型のレンズ面がトランスファーモールドなどにより形成される。 Lens surface of bullet type is formed by a transfer molding as a mold member for focusing light from the D chips. 【0004】形成された発光ダイオードのリードフレーム間に電流を供給することによりLEDチップが発光し所望の光を得ることができる。 [0004] LED chip emits light by supplying a current between the lead frame of the formed light-emitting diode can be obtained the desired light. このような、発光ダイオードは高輝度かつ低消費電力、また振動に強く寿命が長いなどの利点を生かして種々の分野に急速に利用されようとし始めている。 Such light emitting diodes are beginning about to be rapidly utilized in various fields by taking advantage of such high luminance and low power consumption, also has strong life vibration long. 特に、利用分野の広がりと共により厳しい環境下での信頼性が要望されている。 In particular, more stringent reliability under environment has been demanded along with the field of use spread. 【0005】半導体素子を被覆するモールド部材の膨張、収縮や外力などによりワイヤに応力がかかった場合、最も強度が弱い部分の一つとして第2ボンドとなるステッチボンディング部からワイヤ切れを生ずる場合がある。 [0005] expansion of the mold member covering the semiconductor element, if the stress in the wire is applied due shrinkage or external force, if the highest intensity occurs wire breakage from stitch bonding portion to be the second bond as one of the weak parts is there. このようなワイヤ切れを防止する方法として、ステッチボンディング部分に別途ボールボンディングを実施させワイヤを引きちぎる方法を利用して信頼性を確保することが考えられる。 As a method for preventing such wire breakage, it is considered that by using the method torn off wire is performed separately ball bonding stitch bonding portion to secure the reliability. 【0006】 【発明が解決しようとする課題】しかしながら、ワイヤの接続は連続的に長時間行うため初期設定からのずれなどにより、ワークの固定が正確にできず圧力、熱や超音波などワイヤボンディングするためのエネルギーが十分に印加されない場合がある。 [0006] The present invention is, however, the connection wires due deviations from the initial setting for performing continuously a long time, the pressure can not be fixed workpiece precisely, heat or ultrasonic wire bonding energy to may not be sufficiently applied. また、ワイヤやワイヤを固定するキャピラリ506などの汚れ、表面の酸化等ボンディング条件が悪い場合は、十分な接合強度が得られない場合がある。 Also, stains such as a capillary 506 for fixing the wire or wires, if poor oxidation such as bonding conditions the surface, sufficient bonding strength can not be obtained. このような場合には、さらにボンディング加重、熱や超音波エネルギー等を上げてやれば接合強度を向上させられる。 In such a case, it is to improve the bonding strength do it further increases the bonding weight, heat or ultrasonic energy and the like. これにより、ある程度の接合強度を向上させることも可能であるが、熱、加圧や超音波を加えすぎても、図5の如き、細線やボール502の肉厚が小さくなり、ワイヤ501とボールなどの接合部近傍における接合強度を却って低下させることもある。 Thus, it is also possible to improve the degree of bonding strength, heat or too added pressure or ultrasonic, such as 5, the thickness of the thin lines and the ball 502 is reduced, the wire 501 and the ball rather it may also decrease the bonding strength of the bonded portion near such. そのため、第2ボンドにおける接合強度の向上が極めて難しい。 Therefore, extremely difficult improve bonding strength in the second bond. また、引きちぎられたワイヤ長505が安定しないため信頼性が低いという問題を有する。 Also, the wire length 505 torn has a problem of low reliability since no stable. 【0007】従って、より厳しい使用環境下においても高い信頼性が求められる現在においては、上記構成の半導体装置では十分ではなく更なる改良が求められている。 Accordingly, in the present high reliability is required also in the more severe use environment, further not enough improvement in the semiconductor device configured as described above has been demanded. 特に車載や航空機用など温湿度サイクルの激しい環境下、繰り返しリペア使用など、熱衝撃や温湿度サイクルに強い発光ダイオードなどが切望されている。 Particularly severe environments such as temperature and humidity cycle for automotive and aircraft, such as repeated repair using, such as a strong light-emitting diode to the thermal shock and temperature-humidity cycle is desired. 【0008】 【課題を解決するための手段】本発明は、半導体素子に設けられた電極と第1のボールボンディングすると共にリード電極に第1のステッチボンディングさせたワイヤと、半導体素子及びワイヤを被覆するモールド部材とを有する半導体装置である。 [0008] According to an aspect of the present invention, the coating and wire is first stitch bonded to the lead electrode while electrode and the first ball bonding provided on the semiconductor element, the semiconductor element and the wires a semiconductor device and a mold member. 特に、第1のステッチボンディング部は、第1のステッチボンディングの少なくとも一部を覆うように第2のボールボンディング及び第2のステッチボンディングされた金属片を有する半導体装置である。 In particular, the first stitch bonding part is a semiconductor device having a first so as to cover at least a portion of the stitch bonding the second ball bonding and a second stitch bonded metal piece. これにより、モールド部材の熱膨張や熱収縮に伴いワイヤに応力がかかった場合においても、強度の弱いステッチボンディング部においてワイヤの断線が生ずることを極めて低減することができる。 Thus, in the case where stress is applied to the wire with the thermal expansion or thermal contraction of the mold member it can also be extremely reduced that the disconnection of wire occurs in the weak stitch bonding portion strength. また、極めて限られたスペースにおいてもステッチボンディング部の強度を向上させることができる。 Further, it is possible to improve the strength of stitch bonding portion even in a very limited space. 【0009】特に、第2の電極に設けられた第1のステッチボンディング部は、第1のステッチボンディング部の少なくとも一部を覆う第2のボールボンディング及び In particular, the first stitch bonding portion provided on the second electrode, the second ball bonding and covering at least a portion of the first stitch bonding portion
前記第2のボールボンディングの該第2のボールボンデ Said second ball bonding of the second Borubonde
ィングの中心を介して前記半導体素子と接続されたワイ Wai connected to the semiconductor element through the center of Ingu
ヤと対称方向を覆うように第2のステッチボンディング Second stitch bonding to cover Ya symmetrical direction
された金属片を有し、前記第2のステッチボンディング It has a metal piece that is, the second stitch bonding
による金属片は、前記第2のボールボンディングを介し Metal pieces by the way of the second ball bonding
て前記第1のステッチボンディングにより形成されたワ Word formed by said first stitch bonding Te
イヤとほぼ対称であることを特徴とする半導体装置である。 A wherein a is substantially symmetrical to the ear. 【0010】本発明の請求項2に記載の半導体装置は、 [0010] The semiconductor device according to claim 2 of the present invention,
凹部表面からリード電極が露出されてなるパッケージの From the recess surface of the package formed by exposing the lead electrodes
内部に前記半導体素子が載置されている。 The semiconductor element is mounted therein. 【0011】本発明の請求項3に記載の半導体装置は、 [0011] The semiconductor device according to claim 3 of the present invention,
半導体素子が光素子であると共に前記モールド部材が透光性を有する。 The mold member together with the semiconductor element is an optical element has a light-transmitting property. 光素子を被覆するモールド部材の材料選択制が低い場合にもワイヤボンド強度の優れた半導体装置とすることができる。 Can be a material selected braking of the mold member covering the optical device is a semiconductor device having excellent wire bonding strength is lower. 【0012】本発明の請求項4に記載の半導体装置の製造方法は、半導体素子上の電極と、リード電極とをワイヤボンディングさせた半導体装置の製造方法であって、 A method of manufacturing a semiconductor device according to claim 4 of the present invention, the electrodes on the semiconductor element, a manufacturing method of a semiconductor device and a lead electrode is wire bonding,
前記電極上にワイヤを用いて第1のボールボンディングする工程と、前記リード電極上に前記ワイヤにより第1 A step of first ball bonding using a wire on the electrode, first by the wire on the lead electrode
のステッチボンディングをする工程と、該第1のステッチボンディング部分の少なくとも1部を覆うように別途ワイヤを用いて第2のボールボンディングをする工程と、 第2のボールボンディングしたワイヤを延ばしなが A step of the stitch bonding, a step of the second ball bonding using an additional wire so as to cover at least a portion of stitch bonding portion of the first, but such extended a second ball bonding the wire
らキャピラリを引き上げると共にボールボンディングの Of ball bonding together with raising the Luo capillary
中心を介して前記半導体素子と接続されたワイヤと対称 Wire connected to the semiconductor element via a central and symmetrical
方向に移動させ、前記ボールボンディングの一部にキャ It is moved in a direction, calibration in a part of the ball bonding
ピラリが当たるようにキャピラリを降下させ薄膜部分に The membrane portion lowers the capillary so Pirari hits
てワイヤを切断し第2のステッチボンディングする工程とを有する半導体装置の製造方法である。 Te is a method of manufacturing a semiconductor device having a step of bonding the second stitch cutting the wire. これにより、 As a result,
比較的簡単な構成で安定して強度の高いワイヤボンディングを行うことができる。 It is possible to perform a stable high strength wire bonding a relatively simple configuration. 【0013】 【発明の実施の形態】本発明者は種々実験の結果、ステッチボンディング部を特定の金属片で補強することにより比較的簡単な構成で飛躍的に熱衝撃などに強く信頼性の高い半導体装置とできることを見出し本発明を成すに到った。 [0013] DETAILED DESCRIPTION OF THE INVENTION The present inventors as a result of various experiments, highly strong reliable etc. dramatically thermal shock in a relatively simple configuration by reinforcing the stitch bonding portion in particular metal strips was led to form a present invention found that it and the semiconductor device. 【0014】即ち、半導体素子を被覆するモールド部材の膨張、収縮や外力などによりワイヤに応力がかかった場合、最も強度が弱い部分の一つとしてステッチボンディング部からワイヤ切れを生ずる場合がある。 [0014] That is, the expansion of the mold member covering the semiconductor element, if the stress in the wire is applied due contraction or an external force, there is a case where the most strength is causing wire breakage from stitch bonding portion as one weak. 本発明はこのステッチボンディグ部に別途ボールボンディング及びステッチボンディングからなるボンディング処理を利用した金属片を用いて接合強度を高めるものである。 The present invention enhances the bonding strength with the metal pieces using a bonding process consisting of separate ball bonding and stitch bonding to the stitch a bonding unit. 【0015】本発明による接合強度向上の理由は定かではないが、最も強度が弱い部分のうちの一つであるステッチボンディング部に、別途図3のごとくボールボンディング及びボールボンディングの1部分に更に加重及び/又は熱や超音波などのステッチボンディング処理を加える。 [0015] The reason for the bonding strength improvement by the present invention is not clear, most strength in one stitch bonding portion is of a weak, yet weighted separately a portion of the ball bonding and ball bonding as in FIG. 3 and / or addition of stitch bonding process, such as heat or ultrasonic. これにより、一点鎖線部分ではより強力な接合強度が得られる。 Thus, a stronger bonding strength can be obtained by a one-dot chain line portion. ボンディング条件が良くない場合には、 If the bonding conditions are not good,
この部分で接合強度を確保することができる。 It is possible to ensure the bonding strength at this portion. 【0016】他方、ボンディング条件が良い場合には一点鎖線部分の肉厚は薄くなるものの、これ以外のボンディング強度が良好であるため実質的に全体の強度が問題となることがない。 [0016] On the other hand, although thinner wall thickness of the one-dot chain line portion when bonding conditions are good, substantially the entire intensity does not become a problem for other bonding strength is good. このように、常に安定した接合強度を得ることが可能であると考えられる。 Thus, it is always considered to be possible to obtain a stable bonding strength. 【0017】また、ステッチボンディングした後のワイヤを引きちぎる際には一点鎖線部分が薄くなっており、 Further, when torn off the wire after the stitch bonding has become thin one-dot chain line portion,
この部分で安定して切断される。 Stably it is cut at this portion. このため、次のボール作製時に利用するワイヤ長が一定した長さとなる。 Therefore, the length of wire length utilized in the next ball produced was constant. 一般に、ボールの作成はキャピラリ先端から突出しているワイヤにガス炎や放電等によりボールを形成させる。 In general, the creation of the ball to form a ball by gas flame or discharge or the like to the wire protruding from the capillary tip. この場合、キャピラリから突出しているワイヤ長の長さが一定であれば、放電距離も安定する。 In this case, if the length of the wire length protruding from the capillary is constant, the discharge distance is stabilized. また、形成されるボールの大きさも一定して所望のボールを安定して形成することができる。 Further, a desired ball constant also the size of the balls to be formed can be stably formed. さらに、ワイヤボンディングさせるステッチボンディング部にスペース的に制約があり、極めて狭い部位において強度に接続せざるを得ない発光ダイオードなどにおいて特に有効なワイヤボンディング方法とすることができる。 Moreover, there is space constrained in the stitch bonding portion for wire bonding can be a particularly effective wire bonding method in such as strength to the connection inevitably emitting diode in a very narrow region. 以下、本発明の具体的実施例として以下に示すが、本発明はこれのみに限定され得ないことはいうまでもない。 Hereinafter, the following as a specific example of the present invention, the present invention is of course not limited only thereto. 【0018】(実施例1)本発明の半導体装置として図1の如くチップタイプLEDを形成する。 [0018] (Example 1) to form a chip type LED as shown in FIG. 1 as a semiconductor device of the present invention. チップタイプLEDは、内部にLEDチップ101が配置されると共に内部に配置されたLEDチップと外部とを電気的に接続させるリード電極が設けられた白色樹脂パッケージなどで構成されている。 Chip type LED is lead electrodes for connecting the LED chip and the outside disposed within electrically is constituted by a white resin package provided with an LED chip 101 therein is disposed. 白色樹脂パッケージの凹部内に配置されたLEDチップは凹部表面に露出したリード電極とワイヤにより接続されている。 LED chips arranged in a recess of the white resin package are connected by the lead electrode and the wire exposed to the recessed surface. ワイヤ材料は金、アルミニウムや種々の合金など接合性、オーミック性等を考慮して種々選択することができる。 Wire materials gold, bondability such as aluminum and various alloys, in consideration of ohmic resistance, etc. variously selected. また、ワイヤの直径は作業性を考慮して20μmから40μmを好適に利用することができる。 In addition, the diameter of the wire can be suitably used 40μm from 20μm in consideration of workability. 【0019】また、凹部内にはLEDチップやワイヤなどを保護するために透光性のアクリル樹脂などをモールド部材として構成し封止してある。 Further, in the recess are sealed constitute such transparent acrylic resin as a mold member in order to protect the LED chip and wires. モールド部材は透光性、封止性や耐候性を考慮してアクリル樹脂、エポキシ樹脂やガラスなど種々の材料を利用することができる。 The mold member can utilize a variety of materials such as acrylic resin, epoxy resin or glass in consideration of light-sealing properties and weather resistance.
なお、モールド部材中には、発光色を変換させる等の目的で各種着色剤、拡散剤や蛍光体を含有させることもできる。 Note that in the mold member, various colorants for the purpose of, for example, to convert the emission color, may contain a diffusing agent or a fluorescent substance. リード電極は、パッケージ外部底面からパッケージ表面側凹部表面にパッケージ内部を連通して配置され、一対に対向した鉄入り銅などにより断面コの字形状に形成されている。 Lead electrode is placed in communication with the inside of the package from the outside of the package bottom surface of the package side recessed surface is formed in a shape of cross-section U due opposed iron containing copper pair. なお、パッケージはアクリル樹脂の他、ABS、ポリカーボネートなど種々の樹脂を用いて構成しても良いし、セラミックなどを利用して構成させることもできる。 Incidentally, the package other acrylic resins, ABS, may be formed using a variety of resins such as polycarbonate, it can also be configured using a ceramic. 本発明においてはパッケージとモールド部材との熱膨張係数差が大きい場合、ワイヤにかかる応力が大きくなるため、セラミックパッケージと樹脂モールドを利用する場合など特に効果が大きい。 If the thermal expansion coefficient difference between the package and the mold member in the present invention is large, the stress applied to the wire is increased, particularly a large effect like the case of using a ceramic package and a resin mold. 同様に、 Similarly,
モールド部材を凹部内に注入する場合、モールド部材量を凹部よりも多くすることにより、パッケージ表面から凸レンズ形状に形成させる場合がある。 When injecting a molding member in the recess, by more than the concave portion of the mold member amount, which may be formed from the package surface in a convex lens shape. このような凸レンズ形状ではワイヤボンディング表面からモールド部材中心との距離が遠くなり、モールド部材自体の熱膨張や収縮応力が大きくなる。 The distance between the mold member from central Such convex in shape wire bonding surface becomes far, thermal expansion and contraction stress of the mold member itself is increased. そのため、ワイヤにかかる応力が大きくなり本発明の効果が大きくなる。 Therefore, the effect of the present invention the stress applied to the wire is increased becomes larger. 【0020】このようなチップタイプLEDは次のようにして形成することができる。 [0020] can be such chip type LED is formed as follows. パッケージを形成するために、一対に対向して配置した断面コの字形状に形成させたリード電極を金型内に配置する。 To form the package, placing a lead electrode is formed on the shape of the cross section U which is disposed to face the pair in the mold. 金型内に白色顔料を添加させたエポキシ樹脂を射出成形させることにより外部にリード電極表面が露出すると共にパッケージ表面に凹部が形成され凹部表面上にも一対のリード電極が露出した白色樹脂パッケージが形成される。 White resin package in which a pair of lead electrodes in the concave portion is formed on the package surface recess surfaces with the lead electrode surface to the outside is exposed is exposed by an epoxy resin obtained by adding a white pigment into the mold thereby injection molding It is formed. 【0021】こうして形成されたパッケージ凹部内の底面上にエポキシ樹脂を用いて光素子をダイボンディングする。 The optical device is die-bonded by using a [0021] Thus the bottom surface on the epoxy resin of the formed package recess. 光素子としてサファイア基板上にpn接合を有する窒化物半導体を有するものを利用した。 Using those having a nitride semiconductor having a pn junction on a sapphire substrate as an optical element. 光素子は、半導体層上にp型及びn型の一対の電極が同一平面上に設けられた青色が発光可能なLEDチップである。 Optical device, a pair of electrodes of the p-type and n-type is blue emitting LED capable of chips which are disposed on the same plane on a semiconductor layer. LED LED
チップの各電極とパッケージ凹部表面上に設けられたリード電極とを直径35μmの金線によってワイヤボンディングさせる。 A lead electrode provided on each electrode and the package recessed surface of the chip is wire-bonded by a gold wire having a diameter of 35 [mu] m. ワイヤボンドは予め形成させたボールボンディングをLEDチップ上の電極にキャピラリごと押しつけ超音波を印加することにより第1ボンドとしてボールボンディングさせる。 Wire bonds to ball bonding the first bonding by applying a capillary by pressing an ultrasonic ball bonding was previously formed on the electrode on the LED chip. 次に、ワイヤ長を延ばしながらキャピラリをパッケージ表面に設けられたリード電極上に200gの荷重で押しつけ超音波を20msec印可することにより第2ボンドとしてステッチボンディングさせる。 Next, the stitch bonding ultrasonic pressing under a load of 200g capillary while extending the wire length on the lead electrode provided on the package surface as the second bonding by 20msec applied. キャピラリを引き上げワイヤを引きちぎり第1のボールボンディング及び第1のステッチボンディングを終了する(図4(A))。 It ends the first ball bonding and the first stitch bonding tear the pulling wire the capillary (Figure 4 (A)). 【0022】続いて、ワイヤに放電を印加してボールを形成する(図4(B))。 [0022] Subsequently, by applying a discharge wire to form a ball (FIG. 4 (B)). 【0023】形成されたボールを第1のステッチボンディング部に再び降下させ押しつけた後、超音波融着を行う。 [0023] After pressing by again lowering the formed ball first stitch bonding unit, performing ultrasonic welding. こうして、第1のステッチボンディングによりワイヤが潰され薄くなったところに第2のボールボンディングされるためワイヤ強度を飛躍的に向上させることができる。 Thus, it is possible to remarkably improve the wire strength to be second ball bonding at became wire is crushed thinned by the first stitch bonding. また、第2のボールボンディングによる補強ボールは、接合時に加重、超音波印加によりある程度ワイヤの材料である金の拡散を進める(図4(C))。 The reinforcing ball of the second ball bonding, weighting at the time of bonding, promote the diffusion of gold which is a material of somewhat wire by sonication (FIG. 4 (C)). 【0024】引き続き第2のボールボンディグしたワイヤを延ばしながらキャピラリを引き上げると共にボールボンディングの中心を介してLEDチップ接続されたワイヤと対称方向に移動させる(図4(D))。 [0024] is subsequently moved to the second ball a bonding and an LED chip connected wire and symmetrical direction through the center of the ball bonding with pulling the capillary while extending the wire (Fig. 4 (D)). 【0025】次にキャピラリを降下させて180gの荷重で押しつけ超音波を20msec印加させる。 [0025] Then by lowering the capillary is 20msec applying ultrasonic waves pressing at a load of 180 g. 補強ボールの一部にキャピラリが当たるように第2のステッチボンディング行うことにより、部分的に2度加重、超音波の印加が行われる。 By performing the second stitch bonding as capillary hits a part of the reinforcing ball, partially twice weighted, ultrasound applied is performed. そのため、さらなる金拡散が進むこととなる(図4(E))。 Therefore, so that the additional gold diffusion proceeds (FIG. 4 (E)). 【0026】第2のボールボンディング部の一部上で第2のステッチボンディングを行と共にワイヤを切断させて本発明のワイヤボンディングを終了させる。 [0026] terminates the wire bonding of the second part on the second stitch bonding is cut wire with rows with the present invention of the ball bonding portion. (図4 (Fig. 4
(F))。 (F)). 【0027】そのため、何らかのボンディング条件により、第2のボールボンディングによる1度目の加重、超音波印加で金拡散が十分に得られない場合にも、第2のステッチボンディングによる2度目の加重、超音波印可部分で強度を確保することができる。 [0027] Therefore, for some bonding conditions, the second ball bonding first time weighted by, even if the gold diffusion in sonication is not sufficiently obtained, weighted for the second time by the second stitch bonding, ultrasonic it is possible to secure the strength in applied portion. 【0028】補強ボールを1部覆う第2のステッチボンディングは、圧着ボールの下に埋もれたステッチボンディングとほぼ同じ場所に行うことができる。 The second stitch bonding covering part reinforcement balls can be carried out in substantially the same location as stitch bonding buried under a compression ball. そのため、 for that reason,
ボンディングに要するスペースは、ボールでの補強のみの場合と比較して余分に必要となることは実質的ない。 Space required for bonding, it is essentially not to be additionally required compared with the case of only reinforcement in ball. 【0029】また、2度目の加重又は加重及び超音波印加により、金などのワイヤを構成する材料の膜は薄くなるため、その部分で安定してワイヤ切断ができる。 Further, the second time-weighted or weighted and ultrasonic wave application, since thin film of the material of the wire such as gold, can stably wire cut at that portion. そのため、連続してワイヤボンディングを行う場合、この後のボール製作時の放電ギャップも安定する。 Therefore, when continuously performing wire bonding, the discharge gap during ball manufacture subsequent also stabilized. 【0030】なお、ボンディング強度を向上させるため第2のボールボンド中心と第2のステッチボンド中心との距離はキャピラリの先端径に略等しく234μmとさせてある。 [0030] The distance between the second ball bond center and the second stitch bond center for enhancing the bonding strength are allowed to substantially equal 234μm to tip diameter of the capillary. また、通常のステッチボンディグ部とほぼ同様の大きさで強度を向上させることができる。 Further, it is possible to improve the strength in much the same size as the normal stitch a bonding unit. 同様に他方のLEDチップの電極及び樹脂パッケージ凹部底面上に設けられたリード電極をワイヤボンディングする。 Similarly wire bonding lead electrodes provided on the other of the LED chip electrode and the resin package recess on the bottom surface. 【0031】こうしてLEDチップの各電極とパッケージに設けられたリード電極とをそれぞれ電気的に接続させた後、エポキシ樹脂をパッケージの凹部内にエポキシ樹脂を流し込み150℃5時間で硬化させてチップタイプLEDを200個形成させた。 [0031] Thus after the lead electrode provided in each electrode and the package of the LED chip is electrically connected, by curing the epoxy resin at 0.99 ° C. 5 hours pouring an epoxy resin package in the recess chip type the LED was 200 form. こうして形成されたチップタイプLEDの電極に3.5V、25mAの電流を流したところモールド部材を介して青色に発光できることを確認した。 Thus formed 3.5V to the electrode of the chip type LED, was confirmed to be able to emit blue light via the mold member was flowed 25mA of current. 【0032】同様に第2のボールボンディング及び第2 [0032] Similarly, the second ball bonding and the second
のステッチボンディングを行わない以外は同様にして比較のためのチップタイプLEDを比較例1として200 200 chip type LED as Comparative Example 1 for but for the stitch bonding compared in the same manner
個形成させた。 It was number formation. 形成させた各チップタイプLEDを熱衝撃試験として気相熱衝撃装置により−40℃、15分と100℃、15分を800サイクル行い信頼性を調べた。 Each chip type LED having formed -40 ℃ by vapor phase thermal shock device as thermal shock test, 15 minutes 100 ° C., for 15 minutes were examined 800 cycles performed reliability. 【0033】信頼性試験後、本発明のチップタイプLE [0033] After reliability test, the chip type LE of the present invention
Dにおいて、不灯となったものはないのに対し、比較のためのチップタイプLEDは18個も不灯となっていた。 In D, while none have become Fuakari, chip type LED for comparison also 18 been a non-lighting. 各LEDチップを調べたところステッチボンディング部でワイヤが断線していることを確認した。 Wire it was confirmed that broken by stitch bonding portion was checked each LED chip. 【0034】(実施例2)本発明をチップタイプLED [0034] (Example 2) The present invention chip type LED
の代わりに図2に示す如く、砲弾型発光ダイオードとさせた。 As shown in FIG. 2, instead of, was a shell-type light-emitting diode. 予め一対のリードがタイバーで接続されたリードフレームのカップ上にエポキシ樹脂を用いてLEDチップ201を固定させ実施例1と同様の条件で各リード電極となるマウントリード217及びインナーリード20 Advance a pair of leads mount lead 217 and the inner lead becomes the lead electrode under the same conditions as in Example 1 to fix the LED chip 201 with epoxy resin on attached leadframe cup tie bars 20
7の先端とLEDチップの電極とをそれぞれワイヤ20 7 tip and LED chip and electrodes respectively wires 20
3でボンディングさせた。 It was bonding at 3. 【0035】これを内部が砲弾型の空洞を持ったケース内に配置させる。 [0035] This internal is placed in a case having a cavity of shell type. エポキシ樹脂を充填し硬化させた後ケースから取り出した。 It was removed from the case after curing filled with epoxy resin. その後、タイバーを接続することで実施例1と同様にワイヤボンディングさせたモールド部材206が砲弾型の発光ダイオードを形成することができる。 Then, it is possible to mold member 206 similarly to the wire bonding as in Example 1 by connecting a tie bar to form a light-emitting diode bullet-shaped. 実施例2の発光ダイオードは実施例1のチップタイプLEDと同様に優れた信頼性を示した。 Emitting diode of Example 2 showed a chip type LED as well as superior reliability of Example 1. なお、本発明は光素子のうちの発光素子について調べたが、受光素子においても同様の効果を得ることができる。 The present invention has investigated the light-emitting element of the light elements, it is possible to obtain the same effect in the light-receiving element. 【0036】 【発明の効果】本発明の半導体装置は、ボンディング条件に影響されずに安定した接合強度を持たすことができる。 [0036] [Effect of the Invention] The semiconductor device of the present invention can Motas a stable bonding strength without being influenced by the bonding conditions. 極めて狭いボンディング部分においても接合強度の高いワイヤボンディングとすることができる。 It can also be a high bonding strength of wire bonding in a very narrow bonding portion. さらに、 further,
ワイヤが安定した位置で切断できるため、より安定したワイヤボンディングを行うことができる。 Since the wire can be cut in a stable position, it is possible to perform more stable wire bonding.

【図面の簡単な説明】 【図1】本発明の半導体装置の模式的断面図を示す。 It shows a schematic sectional view of a semiconductor device BRIEF DESCRIPTION OF THE DRAWINGS [Figure 1] present invention. 【図2】本発明の別の半導体装置の模式的断面図を示す。 2 shows a schematic cross-sectional view of another semiconductor device of the present invention. 【図3】本発明のワイヤボンディング工程を示す第2ボンド近傍の模式的説明図である。 Figure 3 is a schematic illustration of a second bond near showing a wire bonding process of the present invention. 【図4】本発明のリード電極とワイヤボンディングされた第2ボンド近傍を示した模式的説明図である。 4 is a schematic explanatory view showing a second bond vicinity of the lead electrode and the wire bonding of the present invention. 【図5】本発明と比較のために示したステッチボンディング近傍の模式的説明図である。 5 is a schematic illustration of a stitch bonding vicinity shown for the present invention and comparative. 【符号の説明】 101、201・・・光素子であるLEDチップ102・・・LEDチップの電極103、203・・・ワイヤ104、204・・・第1ボンドとなるボールボンディング部105、205・・・第2ボンドとなるステッチボンディング部106、206・・・透光性のモールド部材107・・・パッケージを構成するリード電極108・・・パッケージを構成する樹脂207・・・インナーリード208・・・マウントリード301・・・ワイヤ302・・・第2のボールボンディング部303・・・第2のボールボンディングから露出したワイヤの一部304・・・ステッチボンディング部305・・・切断されたワイヤ306・・・キャピラリ先端401・・・第1のステッチボンディングされたワイヤ402・・・切 LED chips 102 ... LED chip electrodes 103 and 203 ... wire 104, 204 ... the first bonding ball bonding portion is 101, 201 ... optical element EXPLANATION OF REFERENCE NUMERALS 105, 205, resin 207 constituting the lead electrodes 108 ... packages comprising a ... stitch bonding unit 106, 206 ... translucent mold member 107 ... package comprising a second bonding ... inner lead 208 .. mount lead 301 ... wire 302 ... second ball bonding portion 303 ... second portion of the wire exposed from the ball bonding 304 ... stitch bonding portion 305 ... cut wires 306 ... capillary tip 401 ... first stitch bonded wires 402 ... switching 断されたワイヤ403・・・キャピラリ404・・・ボール405・・・ボールボンディング部406・・・ワイヤ407・・・ステッチボンディング部408・・・第1のステッチボンディングの少なくとも一部を覆うように第2のボールボンディング及び第2のステッチボンディングされた金属片409・・・切断されたワイヤ501・・・ワイヤ502・・・第2のボールボンディング部505・・・切断されたワイヤ506・・・キャピラリ先端 So as to cover at least a portion of the cross-sectional and wire 403 ... capillary 404 ... Ball 405 ... ball bonding portion 406 ... wire 407 ... stitch bonding portion 408 ... first stitch bonding second ball bonding and a second stitch bonded metal pieces 409, ... cut wires 501 ... wire 502 ... second ball bonding portion 505 ... cut wires 506 ... the capillary tip

───────────────────────────────────────────────────── フロントページの続き (58)調査した分野(Int.Cl. 7 ,DB名) H01L 33/00 H01L 21/60 301 ────────────────────────────────────────────────── ─── of the front page continued (58) investigated the field (Int.Cl. 7, DB name) H01L 33/00 H01L 21/60 301

Claims (1)

  1. (57)【特許請求の範囲】 【請求項1】 半導体素子に設けられた電極と第1ボールボンディングすると共にリード電極に第1のステッチボンディングさせたワイヤと、前記半導体素子及びワイヤを被覆するモールド部材とを有する半導体装置であって、前記第1のステッチボンディング部は、第一のステッチボンディングの少なくとも一部を覆う第2のボールボンディング及び前記第2のボールボンディングの該第 (57) and wire is first stitch bonded to the lead electrode while electrode and the first ball bonding provided to the Claims 1 semiconductor devices, the mold covering the semiconductor element and the wires a semiconductor device having a member, said first stitch bonding portion, said second ball bonding and the second ball bonding overlying at least a portion of the first stitch bonding
    2のボールボンディングの中心を介して前記半導体素子 The semiconductor element through the center of the second ball bonding
    と接続されたワイヤと対称方向を覆うように第2のステッチボンディングされた金属片を有し、 前記第2のステ A second stitch bonded metal pieces so as to cover the connected wires and symmetric direction, the second stearate
    ッチボンディングによる金属片は、前記第2のボールボ Metal pieces by pitch bonding, the second Borubo
    ンディングを介して前記第1のステッチボンディングに The first stitch bonding via bindings
    より形成されたワイヤとほぼ対称であることを特徴とする半導体装置。 Wherein a is substantially symmetrical with the more formed wire. 【請求項2】 凹部表面からリード電極が露出されてな From wherein recessed surface I is exposed lead electrodes
    るパッケージの内部に前記半導体素子が載置されている The semiconductor element is mounted on the inside of that package
    ことを特徴とする請求項1記載の半導体装置。 The semiconductor device according to claim 1, wherein a. 【請求項3】 前記半導体素子が光素子であると共に前記モールド部材が透光性を有する請求項1記載の半導体装置。 3. A semiconductor device according to claim 1, wherein the mold member together with said semiconductor element is an optical element has a light-transmitting property. 【請求項4】 半導体素子上の電極と、リード電極とをワイヤボンディングさせた半導体装置の製造方法であって、 前記電極上にワイヤを用いて第1のボールボンディングする工程と、 前記リード電極上に前記ワイヤにより第1のステッチボンディングをする工程と、 該第1のステッチボンディング部分の少なくとも1部を覆うように別途ワイヤを用いて第2のボールボンディングをする工程と、 第2のボールボンディングしたワイヤを延ばしながらキ 4. A on the semiconductor element electrode, a manufacturing method of a semiconductor device and a lead electrode is wire bonding, the steps of the first ball bonding using a wire on the electrode, the lead electrode on the a step of the first stitch bonding by the wires, the steps of the second ball bonding using an additional wire so as to cover at least a portion of stitch bonding portion of the first and second ball bonding while extending the wire key
    ャピラリを引き上げると共にボールボンディングの中心 The center of the ball bonding together with raising the Yapirari
    を介して前記半導体素子と接続されたワイヤと対称方向 Connected to the semiconductor element via a wire and symmetrical directions
    に移動させ、前記ボールボンディングの一部にキャピラ It is moved, capillary part of the ball bonding
    リが当たるようにキャピラリを降下させ薄膜部分にてワ Wa at the thin film part lowers the capillary so Li hits
    イヤを切断し 第2のステッチボンディングする工程とを有することを特徴とする半導体装置の製造方法。 The method of manufacturing a semiconductor device characterized by a step of the second stitch bonding cutting the ear.
JP26876398A 1998-09-22 1998-09-22 Semiconductor device and manufacturing method thereof Expired - Fee Related JP3490906B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP26876398A JP3490906B2 (en) 1998-09-22 1998-09-22 Semiconductor device and manufacturing method thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP26876398A JP3490906B2 (en) 1998-09-22 1998-09-22 Semiconductor device and manufacturing method thereof

Publications (2)

Publication Number Publication Date
JP2000101147A true JP2000101147A (en) 2000-04-07
JP3490906B2 true JP3490906B2 (en) 2004-01-26

Family

ID=17462983

Family Applications (1)

Application Number Title Priority Date Filing Date
JP26876398A Expired - Fee Related JP3490906B2 (en) 1998-09-22 1998-09-22 Semiconductor device and manufacturing method thereof

Country Status (1)

Country Link
JP (1) JP3490906B2 (en)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2004027884A1 (en) 2002-09-19 2004-04-01 Cree, Inc. Phosphor-coated light emitting diodes including tapered sidewalls, and fabrication methods therefor
US20050104072A1 (en) 2003-08-14 2005-05-19 Slater David B.Jr. Localized annealing of metal-silicon carbide ohmic contacts and devices so formed
US7183587B2 (en) 2003-09-09 2007-02-27 Cree, Inc. Solid metal block mounting substrates for semiconductor light emitting devices
US7029935B2 (en) 2003-09-09 2006-04-18 Cree, Inc. Transmissive optical elements including transparent plastic shell having a phosphor dispersed therein, and methods of fabricating same
US20060097385A1 (en) 2004-10-25 2006-05-11 Negley Gerald H Solid metal block semiconductor light emitting device mounting substrates and packages including cavities and heat sinks, and methods of packaging same
US7322732B2 (en) 2004-12-23 2008-01-29 Cree, Inc. Light emitting diode arrays for direct backlighting of liquid crystal displays
JP2009527071A (en) 2005-12-22 2009-07-23 クリー エル イー ディー ライティング ソリューションズ インコーポレイテッド Lighting device
US8441179B2 (en) 2006-01-20 2013-05-14 Cree, Inc. Lighting devices having remote lumiphors that are excited by lumiphor-converted semiconductor excitation sources
US8425271B2 (en) * 2006-09-01 2013-04-23 Cree, Inc. Phosphor position in light emitting diodes
JP5227693B2 (en) * 2008-08-11 2013-07-03 スタンレー電気株式会社 Semiconductor light-emitting device
US8593040B2 (en) 2009-10-02 2013-11-26 Ge Lighting Solutions Llc LED lamp with surface area enhancing fins
JP5612991B2 (en) 2010-09-30 2014-10-22 シャープ株式会社 Emitting device and a lighting device having the same
US8772817B2 (en) 2010-12-22 2014-07-08 Cree, Inc. Electronic device submounts including substrates with thermally conductive vias
US9500355B2 (en) 2012-05-04 2016-11-22 GE Lighting Solutions, LLC Lamp with light emitting elements surrounding active cooling device
KR20140077478A (en) 2012-12-14 2014-06-24 엘지이노텍 주식회사 Light emitting device package
JP2014187392A (en) * 2014-06-23 2014-10-02 Sharp Corp Light-emitting device and luminaire having the same

Also Published As

Publication number Publication date Type
JP2000101147A (en) 2000-04-07 application

Similar Documents

Publication Publication Date Title
US6593598B2 (en) Chip-type light-emitting device with case
US7659551B2 (en) Power surface mount light emitting die package
US5886401A (en) Structure and fabrication method for interconnecting light emitting diodes with metallization extending through vias in a polymer film overlying the light emitting diodes
US7126273B2 (en) LED light source with lens
US7208769B2 (en) LED arrangement
US7253448B2 (en) Semiconductor radiation emitter package
US6846704B2 (en) Semiconductor package and method for manufacturing the same
US20060054913A1 (en) Light emitting device and method of producing same
US7276739B2 (en) Low thermal resistance light emitting diode
US20090321778A1 (en) Flip-chip light emitting diode and method for fabricating the same
US20030020151A1 (en) Thermally-enhanced stacked-die ball grid array semiconductor package and method of fabricating the same
US20100078669A1 (en) Light emitting device and lead frame for the same
US7714342B2 (en) Chip coated light emitting diode package and manufacturing method thereof
US6747293B2 (en) Light emitting device
US20060108594A1 (en) LED device and method for manufacturing the same
US20070145403A1 (en) Luminescent device and method for manufacturing the same
US20080054287A1 (en) Semiconductor light emitting device
US20080031009A1 (en) Light emitting apparatus
WO2002084749A2 (en) Conductor frame and housing for a radiation-emitting component, radiation emitting component and method for producing the same
JP2004055632A (en) Semiconductor light-emitting device
JP2005259972A (en) Surface-mounting led
US20050151149A1 (en) Light emission device
JP2006054209A (en) Light emitting device
JP2004214436A (en) Semiconductor light emitting device and its manufacturing method
JPH11154766A (en) Light emitting diode, and signaling

Legal Events

Date Code Title Description
R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

LAPS Cancellation because of no payment of annual fees