JP3490906B2 - Semiconductor device and manufacturing method thereof - Google Patents

Semiconductor device and manufacturing method thereof

Info

Publication number
JP3490906B2
JP3490906B2 JP26876398A JP26876398A JP3490906B2 JP 3490906 B2 JP3490906 B2 JP 3490906B2 JP 26876398 A JP26876398 A JP 26876398A JP 26876398 A JP26876398 A JP 26876398A JP 3490906 B2 JP3490906 B2 JP 3490906B2
Authority
JP
Japan
Prior art keywords
wire
bonding
ball
stitch
semiconductor device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP26876398A
Other languages
Japanese (ja)
Other versions
JP2000101147A (en
Inventor
力 鎌田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nichia Corp
Original Assignee
Nichia Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nichia Corp filed Critical Nichia Corp
Priority to JP26876398A priority Critical patent/JP3490906B2/en
Publication of JP2000101147A publication Critical patent/JP2000101147A/en
Application granted granted Critical
Publication of JP3490906B2 publication Critical patent/JP3490906B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/156—Material
    • H01L2924/1579—Material with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation

Description

【発明の詳細な説明】Detailed Description of the Invention

【０００１】[0001]

【発明の属する技術分野】本発明は半導体素子の電極と
リード電極とをワイヤにより電気的に接続させた半導体
装置及びその製造方法に係わり、特に、ステッチボンデ
ィング部の接続信頼性が高くワイヤの断線が極めて少な
い半導体装置及びその製造方法に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor device in which an electrode of a semiconductor element and a lead electrode are electrically connected to each other by a wire and a method of manufacturing the same, and particularly, the connection reliability of a stitch bonding portion is high and the wire is broken. The present invention relates to a semiconductor device having a very small number and a manufacturing method thereof.

【０００２】[0002]

【従来技術】半導体装置の一種である発光ダイオード
は、取り扱いやすさやその発光を所望の方向に集光させ
たり発散させたりするなどの目的で半導体素子であるＬ
ＥＤチップを樹脂やガラスなどにより被覆させ形成させ
てある。そのため、絶縁性のモールド部材により被覆さ
れたＬＥＤチップは金線などのワイヤを介して接続され
たリード電極により外部と電気的に接続させている。よ
り具体的には砲弾型発光ダイオードは、半導体素子を介
して一対に電極が設けられたＬＥＤチップなどを利用し
て形成させてある。光素子であるＬＥＤチップの裏面側
電極は、マウントリードの先端上に設けられたカップ内
にＡｇペーストによりダイボンディングし配置と共に電
気的に接続されてある。2. Description of the Related Art A light emitting diode, which is a type of semiconductor device, is a semiconductor element L for the purpose of easy handling and for collecting or diverging the emitted light in a desired direction.
The ED chip is formed by coating it with resin or glass. Therefore, the LED chip covered with the insulating mold member is electrically connected to the outside by the lead electrode connected via a wire such as a gold wire. More specifically, the shell type light emitting diode is formed using an LED chip or the like having a pair of electrodes provided via a semiconductor element. The back side electrode of the LED chip, which is an optical element, is die-bonded with Ag paste in a cup provided on the tip of the mount lead and is electrically connected together with the arrangement.

【０００３】他方、ＬＥＤチップの表面側電極とインナ
ーリード先端の間とを金線によりワイヤボンディング接
続してある。ワイヤボンディングはＬＥＤチップの表面
側を第１ボンドとしてボールボンディングすると共にリ
ード電極上に第２ボンドとしてステッチボンディングす
る。ＬＥＤチップ及び各リードフレームの先端にはＬＥ
Ｄチップからの光を集光させるモールド部材として砲弾
型のレンズ面がトランスファーモールドなどにより形成
される。On the other hand, the front side electrode of the LED chip and the tip of the inner lead are connected by wire bonding with a gold wire. In wire bonding, the surface side of the LED chip is ball-bonded as a first bond and stitch-bonded as a second bond on the lead electrode. LE on the tip of the LED chip and each lead frame
A shell-shaped lens surface is formed by transfer molding or the like as a molding member that collects light from the D chip.

【０００４】形成された発光ダイオードのリードフレー
ム間に電流を供給することによりＬＥＤチップが発光し
所望の光を得ることができる。このような、発光ダイオ
ードは高輝度かつ低消費電力、また振動に強く寿命が長
いなどの利点を生かして種々の分野に急速に利用されよ
うとし始めている。特に、利用分野の広がりと共により
厳しい環境下での信頼性が要望されている。By supplying a current between the lead frames of the formed light emitting diode, the LED chip emits light and desired light can be obtained. Such light emitting diodes have begun to be rapidly used in various fields by taking advantage of advantages such as high brightness and low power consumption, and resistance to vibration and long life. In particular, there is a demand for reliability in more severe environments as the field of use expands.

【０００５】半導体素子を被覆するモールド部材の膨
張、収縮や外力などによりワイヤに応力がかかった場
合、最も強度が弱い部分の一つとして第２ボンドとなる
ステッチボンディング部からワイヤ切れを生ずる場合が
ある。このようなワイヤ切れを防止する方法として、ス
テッチボンディング部分に別途ボールボンディングを実
施させワイヤを引きちぎる方法を利用して信頼性を確保
することが考えられる。When stress is applied to the wire due to expansion, contraction, external force, etc. of the mold member covering the semiconductor element, the wire may be broken from the stitch bonding portion which becomes the second bond as one of the weakest portions. is there. As a method of preventing such wire breakage, it is conceivable to separately perform ball bonding on the stitch bonding portion and tear the wire to ensure reliability.

【０００６】[0006]

【発明が解決しようとする課題】しかしながら、ワイヤ
の接続は連続的に長時間行うため初期設定からのずれな
どにより、ワークの固定が正確にできず圧力、熱や超音
波などワイヤボンディングするためのエネルギーが十分
に印加されない場合がある。また、ワイヤやワイヤを固
定するキャピラリ５０６などの汚れ、表面の酸化等ボン
ディング条件が悪い場合は、十分な接合強度が得られな
い場合がある。このような場合には、さらにボンディン
グ加重、熱や超音波エネルギー等を上げてやれば接合強
度を向上させられる。これにより、ある程度の接合強度
を向上させることも可能であるが、熱、加圧や超音波を
加えすぎても、図５の如き、細線やボール５０２の肉厚
が小さくなり、ワイヤ５０１とボールなどの接合部近傍
における接合強度を却って低下させることもある。その
ため、第２ボンドにおける接合強度の向上が極めて難し
い。また、引きちぎられたワイヤ長５０５が安定しない
ため信頼性が低いという問題を有する。However, since the wire connection is continuously performed for a long time, the work cannot be accurately fixed due to a deviation from the initial setting or the like, which is used for wire bonding such as pressure, heat or ultrasonic wave. Energy may not be applied sufficiently. In addition, when the wire or the capillary 506 for fixing the wire is dirty and the bonding conditions such as oxidation of the surface are bad, sufficient bonding strength may not be obtained. In such a case, the bonding strength can be improved by further increasing the bonding load, heat, ultrasonic energy and the like. With this, it is possible to improve the bonding strength to some extent. However, even if too much heat, pressure or ultrasonic waves are applied, the thin wire or the ball 502 becomes thin as shown in FIG. In some cases, the joint strength in the vicinity of the joint part may be rather decreased. Therefore, it is extremely difficult to improve the bonding strength of the second bond. Further, since the torn wire length 505 is not stable, the reliability is low.

【０００７】従って、より厳しい使用環境下においても
高い信頼性が求められる現在においては、上記構成の半
導体装置では十分ではなく更なる改良が求められてい
る。特に車載や航空機用など温湿度サイクルの激しい環
境下、繰り返しリペア使用など、熱衝撃や温湿度サイク
ルに強い発光ダイオードなどが切望されている。Therefore, at the present time when high reliability is required even in a more severe operating environment, the semiconductor device having the above configuration is not sufficient and further improvement is required. Particularly in an environment where the temperature / humidity cycle is severe, such as for automobiles and airplanes, there is a strong demand for a light emitting diode that is resistant to thermal shock and temperature / humidity cycle, such as repeated repairs.

【０００８】[0008]

【課題を解決するための手段】本発明は、半導体素子に
設けられた電極と第１のボールボンディングすると共に
リード電極に第１のステッチボンディングさせたワイヤ
と、半導体素子及びワイヤを被覆するモールド部材とを
有する半導体装置である。特に、第１のステッチボンデ
ィング部は、第１のステッチボンディングの少なくとも
一部を覆うように第２のボールボンディング及び第２の
ステッチボンディングされた金属片を有する半導体装置
である。これにより、モールド部材の熱膨張や熱収縮に
伴いワイヤに応力がかかった場合においても、強度の弱
いステッチボンディング部においてワイヤの断線が生ず
ることを極めて低減することができる。また、極めて限
られたスペースにおいてもステッチボンディング部の強
度を向上させることができる。According to the present invention, a wire is first ball-bonded to an electrode provided on a semiconductor element and is first stitch-bonded to a lead electrode, and a semiconductor element and a molding member for covering the wire. And a semiconductor device having. In particular, the first stitch bonding portion is a semiconductor device having a second ball-bonded and second stitch-bonded metal piece so as to cover at least a part of the first stitch bonding. As a result, even when stress is applied to the wire due to thermal expansion or thermal contraction of the mold member, it is possible to extremely reduce the occurrence of wire breakage in the stitch bonding portion having low strength. Further, the strength of the stitch bonding portion can be improved even in an extremely limited space.

【０００９】特に、第２の電極に設けられた第１のステ
ッチボンディング部は、第１のステッチボンディング部
の少なくとも一部を覆う第２のボールボンディング及び
前記第２のボールボンディングの該第２のボールボンデ
ィングの中心を介して前記半導体素子と接続されたワイ
ヤと対称方向を覆うように第２のステッチボンディング
された金属片を有し、前記第２のステッチボンディング
による金属片は、前記第２のボールボンディングを介し
て前記第１のステッチボンディングにより形成されたワ
イヤとほぼ対称であることを特徴とする半導体装置であ
る。In particular, the first stitch bonding portion provided on the second electrode includes a second ball bonding portion which covers at least a part of the first stitch bonding portion, and
The second ball bonder of the second ball bonding.
A wire connected to the semiconductor device through the center of the wing.
Second stitch bonding so as to cover the direction symmetrical with the yarn
The second stitch bonding having a metal piece formed thereon
The metal piece by means of the second ball bonding
Formed by the first stitch bonding described above.
It is a semiconductor device characterized by being substantially symmetrical to the ear .

【００１０】本発明の請求項２に記載の半導体装置は、
凹部表面からリード電極が露出されてなるパッケージの
内部に前記半導体素子が載置されている。 A semiconductor device according to claim 2 of the present invention is
Of the package where the lead electrode is exposed from the surface of the recess
The semiconductor element is mounted inside.

【００１１】本発明の請求項３に記載の半導体装置は、
半導体素子が光素子であると共に前記モールド部材が透
光性を有する。光素子を被覆するモールド部材の材料選
択制が低い場合にもワイヤボンド強度の優れた半導体装
置とすることができる。A semiconductor device according to a third aspect of the present invention is
The semiconductor element is an optical element, and the mold member has a light-transmitting property. A semiconductor device having excellent wire bond strength can be obtained even when the material selection of the mold member that covers the optical element is low.

【００１２】本発明の請求項４に記載の半導体装置の製
造方法は、半導体素子上の電極と、リード電極とをワイ
ヤボンディングさせた半導体装置の製造方法であって、
前記電極上にワイヤを用いて第１のボールボンディング
する工程と、前記リード電極上に前記ワイヤにより第１
のステッチボンディングをする工程と、該第１のステッ
チボンディング部分の少なくとも１部を覆うように別途
ワイヤを用いて第２のボールボンディングをする工程
と、第２のボールボンディングしたワイヤを延ばしなが
らキャピラリを引き上げると共にボールボンディングの
中心を介して前記半導体素子と接続されたワイヤと対称
方向に移動させ、前記ボールボンディングの一部にキャ
ピラリが当たるようにキャピラリを降下させ薄膜部分に
てワイヤを切断し第２のステッチボンディングする工程
とを有する半導体装置の製造方法である。これにより、
比較的簡単な構成で安定して強度の高いワイヤボンディ
ングを行うことができる。A method of manufacturing a semiconductor device according to a fourth aspect of the present invention is a method of manufacturing a semiconductor device in which an electrode on a semiconductor element and a lead electrode are wire-bonded to each other.
A step of performing a first ball bonding on the electrode by using a wire; and a step of forming a first ball on the lead electrode by the wire.
Stitch bonding step, a second ball bonding step using a separate wire so as to cover at least a part of the first stitch bonding portion, and the second ball bonded wire is extended.
Of the ball bonding
Symmetric with the wire connected to the semiconductor element through the center
In the direction of the ball bonding,
Lower the capillary so that it hits the thin film
And a step of performing second stitch bonding by cutting the wire . This allows
It is possible to perform stable and high-strength wire bonding with a relatively simple structure.

【００１３】[0013]

【発明の実施の形態】本発明者は種々実験の結果、ステ
ッチボンディング部を特定の金属片で補強することによ
り比較的簡単な構成で飛躍的に熱衝撃などに強く信頼性
の高い半導体装置とできることを見出し本発明を成すに
到った。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS As a result of various experiments, the present inventor has confirmed that a stitch bonding portion is reinforced with a specific metal piece to provide a semiconductor device having a relatively simple structure and being highly resistant to thermal shock and highly reliable. The inventors have found out what can be done and have completed the present invention.

【００１４】即ち、半導体素子を被覆するモールド部材
の膨張、収縮や外力などによりワイヤに応力がかかった
場合、最も強度が弱い部分の一つとしてステッチボンデ
ィング部からワイヤ切れを生ずる場合がある。本発明は
このステッチボンディグ部に別途ボールボンディング及
びステッチボンディングからなるボンディング処理を利
用した金属片を用いて接合強度を高めるものである。That is, when stress is applied to the wire due to expansion, contraction or external force of the mold member covering the semiconductor element, the wire may be broken from the stitch bonding portion as one of the weakest portions. In the present invention, a metal piece using a bonding process consisting of ball bonding and stitch bonding is separately used for the stitch bond portion to enhance the bonding strength.

【００１５】本発明による接合強度向上の理由は定かで
はないが、最も強度が弱い部分のうちの一つであるステ
ッチボンディング部に、別途図３のごとくボールボンデ
ィング及びボールボンディングの１部分に更に加重及び
／又は熱や超音波などのステッチボンディング処理を加
える。これにより、一点鎖線部分ではより強力な接合強
度が得られる。ボンディング条件が良くない場合には、
この部分で接合強度を確保することができる。Although the reason for the improvement of the bonding strength according to the present invention is not clear, the stitch bonding part, which is one of the weakest parts, is further weighted to the ball bonding and one part of the ball bonding as shown in FIG. And / or applying a stitch bonding process such as heat or ultrasonic waves. As a result, stronger bonding strength can be obtained at the one-dot chain line portion. If the bonding conditions are not good,
Bonding strength can be secured at this portion.

【００１６】他方、ボンディング条件が良い場合には一
点鎖線部分の肉厚は薄くなるものの、これ以外のボンデ
ィング強度が良好であるため実質的に全体の強度が問題
となることがない。このように、常に安定した接合強度
を得ることが可能であると考えられる。On the other hand, when the bonding conditions are good, the thickness of the one-dot chain line portion becomes thin, but since the bonding strength other than this is good, the overall strength does not substantially pose a problem. Thus, it is considered possible to always obtain stable bonding strength.

【００１７】また、ステッチボンディングした後のワイ
ヤを引きちぎる際には一点鎖線部分が薄くなっており、
この部分で安定して切断される。このため、次のボール
作製時に利用するワイヤ長が一定した長さとなる。一般
に、ボールの作成はキャピラリ先端から突出しているワ
イヤにガス炎や放電等によりボールを形成させる。この
場合、キャピラリから突出しているワイヤ長の長さが一
定であれば、放電距離も安定する。また、形成されるボ
ールの大きさも一定して所望のボールを安定して形成す
ることができる。さらに、ワイヤボンディングさせるス
テッチボンディング部にスペース的に制約があり、極め
て狭い部位において強度に接続せざるを得ない発光ダイ
オードなどにおいて特に有効なワイヤボンディング方法
とすることができる。以下、本発明の具体的実施例とし
て以下に示すが、本発明はこれのみに限定され得ないこ
とはいうまでもない。Further, when the wire after the stitch bonding is torn off, the one-dot chain line portion becomes thin,
It is stably cut at this part. For this reason, the wire length used in the next ball production becomes constant. In general, the ball is formed by forming a ball on the wire protruding from the tip of the capillary by gas flame, electric discharge, or the like. In this case, if the wire length protruding from the capillary is constant, the discharge distance is also stable. Further, the size of the ball formed is constant, and a desired ball can be stably formed. Further, there is a space limitation in the stitch bonding portion for wire bonding, and the wire bonding method can be particularly effective for a light emitting diode or the like that must be strongly connected in an extremely narrow portion. Hereinafter, specific examples of the present invention will be shown below, but it goes without saying that the present invention is not limited thereto.

【００１８】（実施例１）本発明の半導体装置として図
１の如くチップタイプＬＥＤを形成する。チップタイプ
ＬＥＤは、内部にＬＥＤチップ１０１が配置されると共
に内部に配置されたＬＥＤチップと外部とを電気的に接
続させるリード電極が設けられた白色樹脂パッケージな
どで構成されている。白色樹脂パッケージの凹部内に配
置されたＬＥＤチップは凹部表面に露出したリード電極
とワイヤにより接続されている。ワイヤ材料は金、アル
ミニウムや種々の合金など接合性、オーミック性等を考
慮して種々選択することができる。また、ワイヤの直径
は作業性を考慮して２０μｍから４０μｍを好適に利用
することができる。(Embodiment 1) As a semiconductor device of the present invention, a chip type LED is formed as shown in FIG. The chip type LED is configured by a white resin package or the like in which the LED chip 101 is arranged inside and lead electrodes for electrically connecting the LED chip arranged inside and the outside are provided. The LED chip arranged in the recess of the white resin package is connected to the lead electrode exposed on the surface of the recess by a wire. The wire material can be selected from various materials such as gold, aluminum and various alloys in consideration of the bonding property, ohmic property and the like. Further, the wire diameter can be suitably used from 20 μm to 40 μm in consideration of workability.

【００１９】また、凹部内にはＬＥＤチップやワイヤな
どを保護するために透光性のアクリル樹脂などをモール
ド部材として構成し封止してある。モールド部材は透光
性、封止性や耐候性を考慮してアクリル樹脂、エポキシ
樹脂やガラスなど種々の材料を利用することができる。
なお、モールド部材中には、発光色を変換させる等の目
的で各種着色剤、拡散剤や蛍光体を含有させることもで
きる。リード電極は、パッケージ外部底面からパッケー
ジ表面側凹部表面にパッケージ内部を連通して配置さ
れ、一対に対向した鉄入り銅などにより断面コの字形状
に形成されている。なお、パッケージはアクリル樹脂の
他、ＡＢＳ、ポリカーボネートなど種々の樹脂を用いて
構成しても良いし、セラミックなどを利用して構成させ
ることもできる。本発明においてはパッケージとモール
ド部材との熱膨張係数差が大きい場合、ワイヤにかかる
応力が大きくなるため、セラミックパッケージと樹脂モ
ールドを利用する場合など特に効果が大きい。同様に、
モールド部材を凹部内に注入する場合、モールド部材量
を凹部よりも多くすることにより、パッケージ表面から
凸レンズ形状に形成させる場合がある。このような凸レ
ンズ形状ではワイヤボンディング表面からモールド部材
中心との距離が遠くなり、モールド部材自体の熱膨張や
収縮応力が大きくなる。そのため、ワイヤにかかる応力
が大きくなり本発明の効果が大きくなる。In the recess, a translucent acrylic resin or the like is formed as a molding member and sealed in order to protect the LED chips and wires. Various materials such as acrylic resin, epoxy resin, and glass can be used for the mold member in consideration of translucency, sealing property and weather resistance.
The mold member may contain various colorants, diffusing agents and phosphors for the purpose of converting the emission color. The lead electrode is arranged so as to communicate with the inside of the package from the outer bottom surface of the package to the surface of the concave portion on the package surface side, and is formed in a U-shaped cross section by a pair of iron-containing copper and the like. The package may be made of various resins such as ABS and polycarbonate other than acrylic resin, or may be made of ceramic or the like. In the present invention, when the difference in the coefficient of thermal expansion between the package and the mold member is large, the stress applied to the wire is large, so that the effect is particularly great when using the ceramic package and the resin mold. Similarly,
When injecting the mold member into the recess, the amount of the mold member may be larger than that of the recess to form a convex lens shape from the package surface. In such a convex lens shape, the distance from the wire bonding surface to the center of the mold member becomes large, and the thermal expansion and contraction stress of the mold member itself increases. Therefore, the stress applied to the wire is increased and the effect of the present invention is increased.

【００２０】このようなチップタイプＬＥＤは次のよう
にして形成することができる。パッケージを形成するた
めに、一対に対向して配置した断面コの字形状に形成さ
せたリード電極を金型内に配置する。金型内に白色顔料
を添加させたエポキシ樹脂を射出成形させることにより
外部にリード電極表面が露出すると共にパッケージ表面
に凹部が形成され凹部表面上にも一対のリード電極が露
出した白色樹脂パッケージが形成される。Such a chip type LED can be formed as follows. In order to form a package, lead electrodes formed in a U-shaped cross section, which are arranged so as to face each other, are arranged in a mold. By injection molding an epoxy resin with a white pigment added into the mold, the lead electrode surface is exposed to the outside, and a recess is formed on the package surface. It is formed.

【００２１】こうして形成されたパッケージ凹部内の底
面上にエポキシ樹脂を用いて光素子をダイボンディング
する。光素子としてサファイア基板上にｐｎ接合を有す
る窒化物半導体を有するものを利用した。光素子は、半
導体層上にｐ型及びｎ型の一対の電極が同一平面上に設
けられた青色が発光可能なＬＥＤチップである。ＬＥＤ
チップの各電極とパッケージ凹部表面上に設けられたリ
ード電極とを直径３５μｍの金線によってワイヤボンデ
ィングさせる。ワイヤボンドは予め形成させたボールボ
ンディングをＬＥＤチップ上の電極にキャピラリごと押
しつけ超音波を印加することにより第１ボンドとしてボ
ールボンディングさせる。次に、ワイヤ長を延ばしなが
らキャピラリをパッケージ表面に設けられたリード電極
上に２００ｇの荷重で押しつけ超音波を２０ｍｓｅｃ印
可することにより第２ボンドとしてステッチボンディン
グさせる。キャピラリを引き上げワイヤを引きちぎり第
１のボールボンディング及び第１のステッチボンディン
グを終了する（図４（Ａ））。An optical element is die-bonded to the bottom surface of the package recess thus formed using epoxy resin. An optical element having a nitride semiconductor having a pn junction on a sapphire substrate was used as the optical element. The optical element is an LED chip capable of emitting blue light in which a pair of p-type and n-type electrodes are provided on the same plane on a semiconductor layer. LED
Each electrode of the chip and a lead electrode provided on the surface of the recess of the package are wire-bonded with a gold wire having a diameter of 35 μm. The wire bond is a ball bond formed as a first bond by pressing a previously formed ball bond together with the capillary on the electrode on the LED chip and applying an ultrasonic wave. Next, while extending the wire length, the capillary is pressed against the lead electrode provided on the package surface with a load of 200 g and ultrasonic waves are applied for 20 msec to perform stitch bonding as a second bond. The capillary is pulled up and the wire is torn off to complete the first ball bonding and the first stitch bonding (FIG. 4 (A)).

【００２２】続いて、ワイヤに放電を印加してボールを
形成する（図４（Ｂ））。Then, a discharge is applied to the wire to form a ball (FIG. 4 (B)).

【００２３】形成されたボールを第１のステッチボンデ
ィング部に再び降下させ押しつけた後、超音波融着を行
う。こうして、第１のステッチボンディングによりワイ
ヤが潰され薄くなったところに第２のボールボンディン
グされるためワイヤ強度を飛躍的に向上させることがで
きる。また、第２のボールボンディングによる補強ボー
ルは、接合時に加重、超音波印加によりある程度ワイヤ
の材料である金の拡散を進める（図４（Ｃ））。After the formed ball is lowered and pressed against the first stitch bonding portion again, ultrasonic fusion is performed. In this way, the wire is crushed and thinned by the first stitch bonding, and then the second ball bonding is performed, so that the wire strength can be dramatically improved. Further, the reinforcing ball formed by the second ball bonding promotes the diffusion of gold, which is the material of the wire, to some extent by applying weight and applying ultrasonic waves at the time of joining (FIG. 4C).

【００２４】引き続き第２のボールボンディグしたワイ
ヤを延ばしながらキャピラリを引き上げると共にボール
ボンディングの中心を介してＬＥＤチップ接続されたワ
イヤと対称方向に移動させる（図４（Ｄ））。Subsequently, the second ball-bonded wire is extended, the capillary is pulled up, and the wire connected to the LED chip is moved in a direction symmetrical to the wire through the center of ball bonding (FIG. 4 (D)).

【００２５】次にキャピラリを降下させて１８０ｇの荷
重で押しつけ超音波を２０ｍｓｅｃ印加させる。補強ボ
ールの一部にキャピラリが当たるように第２のステッチ
ボンディング行うことにより、部分的に２度加重、超音
波の印加が行われる。そのため、さらなる金拡散が進む
こととなる（図４（Ｅ））。Next, the capillary is lowered and pressed with a load of 180 g to apply ultrasonic waves for 20 msec. By performing the second stitch bonding so that the capillary hits a part of the reinforcing ball, the weight is partially applied twice and the ultrasonic wave is applied. Therefore, further gold diffusion will proceed (FIG. 4 (E)).

【００２６】第２のボールボンディング部の一部上で第
２のステッチボンディングを行と共にワイヤを切断させ
て本発明のワイヤボンディングを終了させる。（図４
（Ｆ））。The second stitch bonding is performed on the part of the second ball bonding portion along with the row to cut the wire to complete the wire bonding of the present invention. (Fig. 4
(F)).

【００２７】そのため、何らかのボンディング条件によ
り、第２のボールボンディングによる１度目の加重、超
音波印加で金拡散が十分に得られない場合にも、第２の
ステッチボンディングによる２度目の加重、超音波印可
部分で強度を確保することができる。Therefore, due to some bonding condition, even if the first weighting by the second ball bonding and the gold diffusion cannot be sufficiently obtained by the ultrasonic wave application, the second weighting by the second stitch bonding, the ultrasonic wave. The strength can be secured at the applied part.

【００２８】補強ボールを１部覆う第２のステッチボン
ディングは、圧着ボールの下に埋もれたステッチボンデ
ィングとほぼ同じ場所に行うことができる。そのため、
ボンディングに要するスペースは、ボールでの補強のみ
の場合と比較して余分に必要となることは実質的ない。The second stitch bonding that partially covers the reinforcing ball can be made at about the same location as the stitch bonding buried under the crimp ball. for that reason,
The space required for bonding is substantially unnecessary as compared with the case where only the ball is reinforced.

【００２９】また、２度目の加重又は加重及び超音波印
加により、金などのワイヤを構成する材料の膜は薄くな
るため、その部分で安定してワイヤ切断ができる。その
ため、連続してワイヤボンディングを行う場合、この後
のボール製作時の放電ギャップも安定する。Further, the film of the material forming the wire such as gold becomes thin by the second weighting or the weighting and the application of the ultrasonic wave, so that the wire can be stably cut at that portion. Therefore, when wire bonding is continuously performed, the discharge gap at the time of ball production thereafter is also stable.

【００３０】なお、ボンディング強度を向上させるため
第２のボールボンド中心と第２のステッチボンド中心と
の距離はキャピラリの先端径に略等しく２３４μｍとさ
せてある。また、通常のステッチボンディグ部とほぼ同
様の大きさで強度を向上させることができる。同様に他
方のＬＥＤチップの電極及び樹脂パッケージ凹部底面上
に設けられたリード電極をワイヤボンディングする。In order to improve the bonding strength, the distance between the center of the second ball bond and the center of the second stitch bond is 234 μm, which is approximately equal to the tip diameter of the capillary. Further, the strength can be improved with a size substantially the same as that of a normal stitch bond portion. Similarly, the electrode of the other LED chip and the lead electrode provided on the bottom surface of the recess of the resin package are wire-bonded.

【００３１】こうしてＬＥＤチップの各電極とパッケー
ジに設けられたリード電極とをそれぞれ電気的に接続さ
せた後、エポキシ樹脂をパッケージの凹部内にエポキシ
樹脂を流し込み１５０℃５時間で硬化させてチップタイ
プＬＥＤを２００個形成させた。こうして形成されたチ
ップタイプＬＥＤの電極に３．５Ｖ、２５ｍＡの電流を
流したところモールド部材を介して青色に発光できるこ
とを確認した。After electrically connecting each electrode of the LED chip and the lead electrode provided on the package in this manner, the epoxy resin is poured into the recess of the package and cured at 150 ° C. for 5 hours to form a chip type. 200 LEDs were formed. When a current of 3.5 V and 25 mA was applied to the electrodes of the chip type LED thus formed, it was confirmed that blue light could be emitted through the mold member.

【００３２】同様に第２のボールボンディング及び第２
のステッチボンディングを行わない以外は同様にして比
較のためのチップタイプＬＥＤを比較例１として２００
個形成させた。形成させた各チップタイプＬＥＤを熱衝
撃試験として気相熱衝撃装置により−４０℃、１５分と
１００℃、１５分を８００サイクル行い信頼性を調べ
た。Similarly, the second ball bonding and the second ball bonding
A chip-type LED for comparison is 200 as Comparative Example 1 in the same manner except that the above-mentioned stitch bonding is not performed.
Individually formed. Each chip type LED thus formed was subjected to 800 cycles of −40 ° C. and 15 minutes and 100 ° C. and 15 minutes by a vapor phase thermal shock device as a thermal shock test to examine reliability.

【００３３】信頼性試験後、本発明のチップタイプＬＥ
Ｄにおいて、不灯となったものはないのに対し、比較の
ためのチップタイプＬＥＤは１８個も不灯となってい
た。各ＬＥＤチップを調べたところステッチボンディン
グ部でワイヤが断線していることを確認した。After the reliability test, the chip type LE of the present invention was used.
In D, none of the LEDs were unlit, whereas 18 chip-type LEDs for comparison were also unlit. When each LED chip was examined, it was confirmed that the wire was broken at the stitch bonding portion.

【００３４】（実施例２）本発明をチップタイプＬＥＤ
の代わりに図２に示す如く、砲弾型発光ダイオードとさ
せた。予め一対のリードがタイバーで接続されたリード
フレームのカップ上にエポキシ樹脂を用いてＬＥＤチッ
プ２０１を固定させ実施例１と同様の条件で各リード電
極となるマウントリード２１７及びインナーリード２０
７の先端とＬＥＤチップの電極とをそれぞれワイヤ２０
３でボンディングさせた。(Example 2) Chip type LED according to the present invention
Instead of, a shell type light emitting diode was used as shown in FIG. The mount lead 217 and the inner lead 20 that become the respective lead electrodes by fixing the LED chip 201 using epoxy resin on the cup of the lead frame to which a pair of leads are connected in advance by tie bars are used as the lead electrodes.
The tip of 7 and the electrode of the LED chip are connected to the wire 20 respectively.
Bonding was performed at 3.

【００３５】これを内部が砲弾型の空洞を持ったケース
内に配置させる。エポキシ樹脂を充填し硬化させた後ケ
ースから取り出した。その後、タイバーを接続すること
で実施例１と同様にワイヤボンディングさせたモールド
部材２０６が砲弾型の発光ダイオードを形成することが
できる。実施例２の発光ダイオードは実施例１のチップ
タイプＬＥＤと同様に優れた信頼性を示した。なお、本
発明は光素子のうちの発光素子について調べたが、受光
素子においても同様の効果を得ることができる。This is placed in a case having a shell-shaped cavity inside. After the epoxy resin was filled and cured, it was taken out from the case. Then, by connecting the tie bar, the wire-bonded mold member 206 can form a bullet type light emitting diode as in the first embodiment. The light emitting diode of Example 2 showed the same excellent reliability as the chip type LED of Example 1. In addition, although the present invention has examined the light emitting element of the optical elements, the same effect can be obtained in the light receiving element.

【００３６】[0036]

【発明の効果】本発明の半導体装置は、ボンディング条
件に影響されずに安定した接合強度を持たすことができ
る。極めて狭いボンディング部分においても接合強度の
高いワイヤボンディングとすることができる。さらに、
ワイヤが安定した位置で切断できるため、より安定した
ワイヤボンディングを行うことができる。The semiconductor device of the present invention can have stable bonding strength without being affected by bonding conditions. Wire bonding with high bonding strength can be achieved even in an extremely narrow bonding portion. further,
Since the wire can be cut at a stable position, more stable wire bonding can be performed.

【図面の簡単な説明】[Brief description of drawings]

【図１】本発明の半導体装置の模式的断面図を示す。FIG. 1 shows a schematic sectional view of a semiconductor device of the present invention.

【図２】本発明の別の半導体装置の模式的断面図を示
す。FIG. 2 shows a schematic cross-sectional view of another semiconductor device of the present invention.

【図３】本発明のワイヤボンディング工程を示す第２ボ
ンド近傍の模式的説明図である。FIG. 3 is a schematic explanatory view in the vicinity of a second bond showing a wire bonding process of the present invention.

【図４】本発明のリード電極とワイヤボンディングされ
た第２ボンド近傍を示した模式的説明図である。FIG. 4 is a schematic explanatory view showing the vicinity of a second bond wire-bonded to a lead electrode of the present invention.

【図５】本発明と比較のために示したステッチボンディ
ング近傍の模式的説明図である。FIG. 5 is a schematic explanatory view in the vicinity of stitch bonding shown for comparison with the present invention.

【符号の説明】[Explanation of symbols]

１０１、２０１・・・光素子であるＬＥＤチップ １０２・・・ＬＥＤチップの電極 １０３、２０３・・・ワイヤ １０４、２０４・・・第１ボンドとなるボールボンディ
ング部 １０５、２０５・・・第２ボンドとなるステッチボンデ
ィング部 １０６、２０６・・・透光性のモールド部材 １０７・・・パッケージを構成するリード電極 １０８・・・パッケージを構成する樹脂 ２０７・・・インナーリード ２０８・・・マウントリード ３０１・・・ワイヤ ３０２・・・第２のボールボンディング部 ３０３・・・第２のボールボンディングから露出したワ
イヤの一部 ３０４・・・ステッチボンディング部 ３０５・・・切断されたワイヤ ３０６・・・キャピラリ先端 ４０１・・・第１のステッチボンディングされたワイヤ ４０２・・・切断されたワイヤ ４０３・・・キャピラリ ４０４・・・ボール ４０５・・・ボールボンディング部 ４０６・・・ワイヤ ４０７・・・ステッチボンディング部 ４０８・・・第１のステッチボンディングの少なくとも
一部を覆うように第２のボールボンディング及び第２の
ステッチボンディングされた金属片 ４０９・・・切断されたワイヤ ５０１・・・ワイヤ ５０２・・・第２のボールボンディング部 ５０５・・・切断されたワイヤ ５０６・・・キャピラリ先端101, 201 ... LED chip which is an optical element 102 ... LED chip electrode 103, 203 ... Wires 104, 204 ... Ball bonding portion 105, 205 ... Second bond serving as first bond Stitch bonding portions 106 and 206 ... Translucent mold member 107 ... Lead electrodes 108 that form a package ... Resin 207 that forms a package ... Inner leads 208 ... Mount leads 301. .... Wire 302 ... Second ball bonding portion 303 ... Part of wire exposed from second ball bonding 304 ... Stitch bonding portion 305 ... Cut wire 306 ... Capillary tip 401 ... First stitch-bonded wire 402 ... Cut wire 03 ... Capillary 404 ... Ball 405 ... Ball bonding portion 406 ... Wire 407 ... Stitch bonding portion 408 ... Second ball so as to cover at least a part of the first stitch bonding Bonding and second stitch-bonded metal piece 409 ... Cut wire 501 ... Wire 502 ... Second ball bonding portion 505 ... Cut wire 506 ... Capillary tip

───────────────────────────────────────────────────── フロントページの続き (58)調査した分野(Int.Cl.7，ＤＢ名) H01L 33/00 H01L 21/60 301 ─────────────────────────────────────────────────── ─── Continuation of the front page (58) Fields surveyed (Int.Cl. 7 , DB name) H01L 33/00 H01L 21/60 301

Claims (4)

(57)【特許請求の範囲】(57) [Claims] 【請求項１】 半導体素子に設けられた電極と第１ボー
ルボンディングすると共にリード電極に第１のステッチ
ボンディングさせたワイヤと、前記半導体素子及びワイ
ヤを被覆するモールド部材とを有する半導体装置であっ
て、前記第１のステッチボンディング部は、第一のステ
ッチボンディングの少なくとも一部を覆う第２のボール
ボンディング及び前記第２のボールボンディングの該第
２のボールボンディングの中心を介して前記半導体素子
と接続されたワイヤと対称方向を覆うように第２のステ
ッチボンディングされた金属片を有し、前記第２のステ
ッチボンディングによる金属片は、前記第２のボールボ
ンディングを介して前記第１のステッチボンディングに
より形成されたワイヤとほぼ対称であることを特徴とす
る半導体装置。1. A semiconductor device comprising a wire which is first ball-bonded to an electrode provided on a semiconductor element and is first stitch-bonded to a lead electrode, and a molding member which covers the semiconductor element and the wire. The first stitch bonding portion includes a second ball bonding portion that covers at least a part of the first stitch bonding portion and the second ball bonding portion of the second ball bonding portion .
2. The semiconductor device through the center of ball bonding
A second stitch bonded metal pieces so as to cover the connected wires and symmetric direction, the second stearate
The metal piece formed by touch bonding is the second ball
To the first stitch bonding via bonding
A semiconductor device, which is substantially symmetrical to a wire formed by 【請求項２】 凹部表面からリード電極が露出されてな
るパッケージの内部に前記半導体素子が載置されている
ことを特徴とする請求項１記載の半導体装置。 2. The lead electrode is not exposed from the surface of the recess.
The semiconductor element is mounted inside the package
The semiconductor device according to claim 1, wherein: 【請求項３】 前記半導体素子が光素子であると共に前
記モールド部材が透光性を有する請求項１記載の半導体
装置。3. The semiconductor device according to claim 1, wherein the semiconductor element is an optical element, and the mold member has a light-transmitting property. 【請求項４】 半導体素子上の電極と、リード電極とを
ワイヤボンディングさせた半導体装置の製造方法であっ
て、 前記電極上にワイヤを用いて第１のボールボンディング
する工程と、 前記リード電極上に前記ワイヤにより第１のステッチボ
ンディングをする工程と、 該第１のステッチボンディング部分の少なくとも１部を
覆うように別途ワイヤを用いて第２のボールボンディン
グをする工程と、第２のボールボンディングしたワイヤを延ばしながらキ
ャピラリを引き上げると共にボールボンディングの中心
を介して前記半導体素子と接続されたワイヤと対称方向
に移動させ、前記ボールボンディングの一部にキャピラ
リが当たるようにキャピラリを降下させ薄膜部分にてワ
イヤを切断し 第２のステッチボンディングする工程とを
有することを特徴とする半導体装置の製造方法。4. A method of manufacturing a semiconductor device in which an electrode on a semiconductor element and a lead electrode are wire-bonded to each other, the first ball-bonding using a wire on the electrode; A step of performing first stitch bonding with the wire, a step of performing second ball bonding using a separate wire so as to cover at least a part of the first stitch bonding portion, and a second ball bonding While extending the wire,
The center of ball bonding while pulling up the capillary
Direction symmetrical to the wire connected to the semiconductor element via
The capillaries on the ball bonding part.
The capillary is lowered so that the
A step of cutting an ear and performing second stitch bonding.
JP26876398A 1998-09-22 1998-09-22 Semiconductor device and manufacturing method thereof Expired - Fee Related JP3490906B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP26876398A JP3490906B2 (en) 1998-09-22 1998-09-22 Semiconductor device and manufacturing method thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP26876398A JP3490906B2 (en) 1998-09-22 1998-09-22 Semiconductor device and manufacturing method thereof

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