JP3437194B2 - Oxidation resistant Si-SiC sintered body - Google Patents
Oxidation resistant Si-SiC sintered bodyInfo
- Publication number
- JP3437194B2 JP3437194B2 JP23845792A JP23845792A JP3437194B2 JP 3437194 B2 JP3437194 B2 JP 3437194B2 JP 23845792 A JP23845792 A JP 23845792A JP 23845792 A JP23845792 A JP 23845792A JP 3437194 B2 JP3437194 B2 JP 3437194B2
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- sic
- sintered body
- parts
- powder
- Prior art date
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Description
【発明の詳細な説明】
【０００１】
【産業上の利用分野】本発明は、陶磁器、タイル等の迅
速焼成炉用棚板等に好ましく使用できる耐酸化性に優れ
たＳｉ−ＳｉＣ質焼結体に関する。
【０００２】
【従来の技術】従来、炭化珪素（ＳｉＣ）質焼結体は、
その優れた耐熱性及び耐火性から工業上重要な位置を占
めており、例えば碍子、衛生陶器、食器、額縁及び陶管
等の陶磁器やタイル等の焼成用棚板として多用されてい
る。かかるＳｉＣ質焼結体のうち、ＳｉＣとＳｉを構成
成分として含むＳｉ−ＳｉＣ質焼結体が知られており、
このＳｉ−ＳｉＣ質焼結体は、主として半導体焼成用炉
芯管、ローラーハースキルン用ローラー・熱交換体用チ
ューブ等に用いられていた。
【０００３】
【発明が解決しようとする課題】しかしながら、Ｓｉ−
ＳｉＣ質焼結体を、窯業製品焼成用の棚板に応用した先
例は見当たらない。かかる状況の下、実際にＳｉ−Ｓｉ
Ｃ質焼結体を棚板として食器、タイル及び衛生陶器等を
焼成すると、該棚板が酸化されて脆化し、クラックが発
生し、最悪の場合には破損してしまい、使用に耐えない
ことが判明した。本発明は、このような従来技術の有す
る課題に鑑みてなされたものであり、その目的とすると
ころは、耐酸化性に優れ、長期間の使用に耐え得るＳｉ
−ＳｉＣ質焼結体及びその製造方法を提供することにあ
る。
【０００４】
【課題を解決するための手段】本発明者は、前記課題を
解決すべく鋭意研究した結果、Ｓｉ−ＳｉＣ質焼結体の
気孔率及びＳｉＣ原料、Ｃ原料及び金属Ｓｉ原料等に混
入しているＣａその他の不純物量を制御することによ
り、前記課題が解決できることを見出し本発明を完成す
るに至った。
【０００５】
【０００６】従って、本発明のＳｉ−ＳｉＣ質焼結体の
製造方法は、Ｃ粉体、ＳｉＣ粉体及び金属Ｓｉを用いて
Ｓｉ−ＳｉＣ質焼結体を製造するに当たり、１〜１２重
量％のＣ粉体と８８〜９９重量％のＳｉＣ粉体とを混合
し、この混合に際し、上記Ｃ粉体、ＳｉＣ粉体及び後に
添加する金属Ｓｉに含まれる不純物の量が、製造せんと
する焼結体のＳｉとＳｉＣとから成る主相１００重量部
に対して、Ｃａが０．０１〜０．１重量部、Ａｌが０．
０２〜０．３７重量部、及びＦｅが０．０７〜０．３６
重量部であり、これらの不純物の総量が０．８重量部以
下となるように、上記Ｃ粉体とＳｉＣ粉体とを調整・混
合し、得られた混合物１００重量部に対して０．１〜１
５重量部のバインダを添加して成形原料を得、次いで、
この成形原料を成形して成形体を得、この成形体を１４
５０〜２５００℃の減圧の金属Ｓｉ雰囲気中で焼成する
に際し、得られる焼結体の気孔率が０．８％以下となる
理論量より１．０５倍以上過剰量の金属Ｓｉを、該成形
原料に添加・焼成して焼結体を得ることを特徴とする。
【０００７】
【作用】本発明においては、Ｓｉ−ＳｉＣ質焼結体の気
孔率を０．８％以下に制御し、且つＣａ等の不純物量を
所定量以下に制御した。即ち、気孔率を所定値以下に制
御することにより、この焼結体を棚板として用いた場合
等に酸素ガスと接触する面積を低減するとともに、Ｃａ
等の酸化を促進する元素の量を制御することにより、焼
結体の酸化を抑制した。
【０００８】次に、本発明のＳｉ−ＳｉＣ質焼結体の製
造方法について説明する。まず、成形用原料としては、
１〜１２重量％のＣ粉体、８８〜９９重量％のＳｉＣ粉
体、Ｃ粉体とＳｉＣ粉体との混合物１００重量部に対し
０．１〜１５重量部の有機質バインダー及び適当量の水
分又は有機溶剤を含有した原料を用いる。この成形用原
料を混練し、成形体を成形する。次いで、この成形体
を、金属シリコン雰囲気下で、減圧の不活性ガス雰囲気
又は真空中に置き、成形体中に金属シリコンを含浸させ
てＳｉ−ＳｉＣ質焼結体を製造する。
【０００９】上記成形体の作製に際し、Ｃ粉体、ＳｉＣ
粉体及び含浸に用いる金属Ｓｉに含まれるＣａ、Ａｌ及
びＦｅの不純物を、得られる焼結体１００重量部に対し
て０．８重量部以下に制御する。具体的には、焼結体１
００重量部に対して、Ｃａが０．０１〜０．１重量部、
Ａｌが０．０２〜０．３７重量部、及びＦｅが０．０７
〜０．３６重量部であり、これらの不純物の総量が０．
８重量部以下となるように制御する。これらの各不純物
の量が上記所定量を超え、また不純物の総量が０．８重
量部を超えると、耐酸化性が低下する傾向を生じ好まし
くない。この不純物の制御は、Ｃ原料、ＳｉＣ原料及び
金属Ｓｉ原料を選択して用いることにより行うことがで
きる。即ち、上記不純物を所定量含有する原料を選択し
て用いることにより、得られるＳｉ−ＳｉＣ質焼結体に
含有される不純物量を制御することができる。また、適
宜これら不純物を添加・除去して微調整することも可能
である。
【００１０】上記金属シリコンの含浸に当たっては、得
られるＳｉ−ＳｉＣ質焼結体の気孔率が０．８％以下と
なるように含浸させる。この場合の金属Ｓｉの添加量
は、含浸効率の関係等から、０．８％の気孔率を実現す
るに必要とされる理論量より過剰なものとする必要があ
る。即ち、０．８％の気孔率を実現するには、金属Ｓｉ
を当該理論量より１．０５倍以上過剰に添加する必要が
ある。この際、添加される金属Ｓｉは、Ｓｉ＋Ｃ→Ｓｉ
Ｃの反応に寄与する分と、気孔を埋める分と、余剰なＳ
ｉ分の３態様で消費される。１．０５倍未満の場合に
は、Ｓｉの含浸不良を生じ、得られる焼結体の気孔率が
増大して耐酸化性を低下させることとなり好ましくな
い。また、過剰の金属Ｓｉを付与することにより、焼結
体の表面には余分なＳｉが浸出することになるが、これ
はサンドブラスト、旋盤加工等によって除去することが
可能である。このように、金属Ｓｉを含浸させる結果、
得られるＳｉ−ＳｉＣ質焼結体としては、主相が、Ｓｉ
を３〜３０重量％及びＳｉＣを７０〜９７重量％含有す
ることになる。
【００１１】また、本発明における成形体の成形方法と
しては、プレス成形、流し込み成形、押し出し成形いず
れも可能であるが、量産性の観点からはプレス成形が好
ましい。加圧方式としては油圧プレスが好ましく、この
場合の油圧プレス圧は、通常１００〜２０００ｋｇ／ｃ
ｍ2である。
【００１２】
【実施例】以下、本発明を実施例に基づき更に詳細に説
明するが、本発明はこれら実施例に限定されるものでは
ない。なお、各例によって得られた焼結体は、以下に示
す方法により性能を評価した。
（耐酸化性の評価方法）６０ｍｍ×６０ｍｍ×５ｍｍ
（厚さ）のテストピースを切り出し、これを１１５０℃
のＨ2ＯとＯ2との混合ガス中で酸化させた。各テストピ
ースについて、以下に説明する酸化速度を測定した。
【００１３】（酸化速度）
ｙ＝ｘ／１．００ × １０6／１００［ｐｐｍ／ｈ
ｒ］
上式において、酸化初期ではテストピースの表層にＳｉ
Ｏ2質被膜が形成されるため、酸化試験開始１００ｈｒ
後のテストピースの重量を１．００とし、更にその１０
０ｈｒ後の重量をｘとした。酸化速度ｙが５０を超える
と、通常の大気雰囲気下での使用であっても酸化が２次
関数的に進行し、材料（焼結体）の劣化を生ずる。一
方、ｙが５０以下の場合には、酸化速度は次第に小さく
なるため、高温下での長期間使用に耐える材料といえ
る。
【００１４】（実施例１〜９、比較例１〜５）平均粒径
３μｍのＳｉＣ微粉と平均粒径１００μｍのＳｉＣ粗粉
を３０：７０（重量比）で混合したＳｉＣ粉末に対し、
平均粒径１μｍの黒鉛粉をそれぞれ所定の割合で混合し
た。この混合物１００重量部に対し有機バインダー（メ
チルセルロース）２重量部、及び水分又は有機溶剤３重
量部をで配合し、成形原料を得た。この際、不純物であ
るＣａ、Ａｌ及びＦｅを所定量含むＳｉＣ原料及びＣ原
料を用いて混合し、これら不純物の量を、後に含浸させ
る金属Ｓｉ原料をも考慮して表１に示すような値に制御
した。
【００１５】次に、これらの成形原料をボールミルを用
いて解砕し、解砕した成形原料を金型内に導入し、油圧
プレスを用いて５００ｋｇ／ｃｍ2で成形し、厚さ５ｍ
ｍの板状成形体（４００ｍｍ×４００ｍｍ）を得た。
【００１６】次いで、ＢＮ（窒化ホウ素）コーティング
の反応防止層を施したカーボンルツボ中に、板状成形体
及び金属Ｓｉを設置した。この際、０．８％の気孔率を
実現するに必要な金属Ｓｉの理論量に対して、金属Ｓｉ
の量が表１に示す倍率だけ過剰となるように適宜量を変
化させて設置した。この板状成形体及び金属Ｓｉを、室
温から６００℃の間は０．１Ｔｏｒｒの真空下、６００
〜１０００℃の間は２Ｔｏｒｒのアルゴンガス雰囲気
下、１０００〜１８００℃までアルゴンガス雰囲気で５
Ｔｏｒｒの減圧下で焼成することにより、金属Ｓｉを含
浸させ、かつＣａ等の不純物量を制御したＳｉ−ＳｉＣ
焼結体を製造した。なお、最高温度（１８００℃）の保
持時間は３時間とした。また、１４００〜１５００℃の
間は１０℃／ｈｒで昇温した。得られたＳｉ−ＳｉＣ焼
結体の耐酸化性の測定結果、気孔率及び組成等を表１に
示す。
【００１７】
【表１】【００１８】表１から明らかなように、本発明のＳｉ−
ＳｉＣ質焼結体は、５０ｐｐｍ／ｈｒ以下の酸化速度を
有し、優れた耐酸化性を有することが分かる。
【００１９】
【発明の効果】以上説明したように、本発明によれば、
Ｓｉ−ＳｉＣ質焼結体の気孔率及びＳｉＣ原料、Ｃ原料
及び金属Ｓｉ原料等に混入しているＣａその他の不純物
量を制御することとしたため、耐酸化性に優れ、長期間
の使用に耐え得るＳｉ−ＳｉＣ質焼結体の製造方法を提
供することができる。また、Ｓｉ−ＳｉＣ質焼結体の製
造を極めて再現性よく行うことが可能となる。従って、
本発明の焼結体は、耐酸化性等を重視する迅速焼成炉用
棚板、匣鉢、サヤ等の窯道具、特にローラーハースキル
ンを用いたタイル焼成用棚板に好ましく用いることがで
きる。Description: BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a sintered body of Si--SiC having excellent oxidation resistance which can be preferably used for a shelf plate for a rapid firing furnace such as ceramics and tiles. About. Conventionally, silicon carbide (SiC) -based sintered bodies have been
Due to its excellent heat resistance and fire resistance, it occupies an important position in the industry, and is widely used as a shelf for firing ceramics such as insulators, sanitary ware, tableware, picture frames and ceramic tubes, and tiles. Among such SiC-based sintered bodies, Si-SiC-based sintered bodies containing SiC and Si as constituent components are known,
This Si—SiC sintered body was mainly used for a furnace core tube for firing a semiconductor, a roller for a roller hearth kiln, a tube for a heat exchanger, and the like. [0003] However, Si-
There is no precedent for applying a SiC sintered body to a shelf for firing ceramic products. Under such circumstances, the actual Si-Si
When tableware, tiles, sanitary ware, etc. are fired using a C-type sintered body as a shelf, the shelf is oxidized and embrittled, cracking occurs, and in the worst case, it breaks and cannot be used. There was found. The present invention has been made in view of such problems of the related art, and an object of the present invention is to provide Si which has excellent oxidation resistance and can withstand long-term use.
-To provide a SiC-based sintered body and a method for producing the same. The present inventors have conducted intensive studies to solve the above-mentioned problems, and as a result, have found that the porosity of the Si—SiC sintered body, the SiC raw material, the C raw material, the metal Si raw material and the like have been improved. The inventors have found that the above problem can be solved by controlling the amounts of Ca and other impurities mixed therein, and have completed the present invention. Accordingly , the method for producing a Si—SiC sintered body according to the present invention employs a method for producing a Si—SiC sintered body using C powder, SiC powder, and metallic Si. 12% by weight of the C powder and 88 to 99% by weight of the SiC powder are mixed, and the amount of impurities contained in the C powder, the SiC powder and the metal Si to be added later is not produced. 0.01 to 0.1 parts by weight of Ca and 0.1 to 0.1 parts by weight of Al with respect to 100 parts by weight of the main phase composed of Si and SiC.
02 to 0.37 parts by weight, and 0.07 to 0.36 Fe
The C powder and the SiC powder were adjusted and mixed so that the total amount of these impurities was 0.8 parts by weight or less, and 0.1 part by weight with respect to 100 parts by weight of the obtained mixture. ~ 1
5 parts by weight of a binder is added to obtain a molding raw material,
The molding material is molded to obtain a molded body, and the molded body is
When firing in a metal Si atmosphere at a reduced pressure of 50 to 2500 ° C., a metal material having an excess of 1.05 times or more as much as the theoretical amount of porosity of the obtained sintered body of 0.8% or less is used as the forming raw material. And sintering to obtain a sintered body. In the present invention, the porosity of the Si-SiC sintered body is controlled to 0.8% or less, and the amount of impurities such as Ca is controlled to a predetermined amount or less. That is, by controlling the porosity to a predetermined value or less, the area in contact with oxygen gas when the sintered body is used as a shelf plate is reduced,
Oxidation of the sintered body was suppressed by controlling the amount of an element that promotes oxidation such as the above. Next, a method for producing a Si—SiC sintered body of the present invention will be described. First, as a raw material for molding,
1 to 12% by weight of C powder, 88 to 99% by weight of SiC powder, 0.1 to 15 parts by weight of an organic binder and an appropriate amount of water based on 100 parts by weight of a mixture of C powder and SiC powder Alternatively, a raw material containing an organic solvent is used. This molding material is kneaded to form a molded body. Next, the compact is placed in a reduced pressure inert gas atmosphere or vacuum under a metallic silicon atmosphere, and the compact is impregnated with metallic silicon to produce a Si-SiC sintered body. In producing the above-mentioned molded product, C powder, SiC
The impurities of Ca, Al and Fe contained in the powder and the metal Si used for impregnation are controlled to 0.8 parts by weight or less based on 100 parts by weight of the obtained sintered body. Specifically, the sintered body 1
0.01 to 0.1 parts by weight of Ca relative to 00 parts by weight ,
0.02 to 0.37 parts by weight of Al and 0.07
０．３0.36 parts by weight , and the total amount of these impurities is 0.
It is controlled to be 8 parts by weight or less. If the amount of each of these impurities exceeds the above-mentioned predetermined amount, and if the total amount of the impurities exceeds 0.8 parts by weight, the oxidation resistance tends to decrease, which is not preferable. The control of the impurities can be performed by selecting and using a C raw material, a SiC raw material, and a metal Si raw material. That is, the amount of impurities contained in the obtained Si—SiC sintered body can be controlled by selecting and using a raw material containing a predetermined amount of the above impurities. Also, fine adjustment can be made by adding or removing these impurities as appropriate. In the impregnation of the metal silicon, the impregnation is performed so that the porosity of the obtained Si—SiC sintered body is 0.8% or less. In this case, the addition amount of the metal Si needs to be larger than the theoretical amount required to realize a porosity of 0.8% from the relationship of impregnation efficiency and the like. That is, to achieve a porosity of 0.8%, metal Si
Must be added in excess of 1.05 times the theoretical amount. At this time, the added metal Si is Si + C → Si
C contributes to the reaction, fills pores, and surplus S
It is consumed in three ways of i. If it is less than 1.05 times, impregnation failure of Si occurs, and the porosity of the obtained sintered body increases, and the oxidation resistance decreases, which is not preferable. Further, by adding excess metal Si, excess Si is leached out on the surface of the sintered body, but this can be removed by sandblasting, lathing, or the like. Thus, as a result of impregnating the metal Si,
The main phase of the obtained Si-SiC sintered body is Si
3 to 30% by weight and 70 to 97% by weight of SiC. The molding method of the present invention can be any of press molding, cast molding and extrusion molding, but press molding is preferred from the viewpoint of mass productivity. As the pressurizing method, a hydraulic press is preferable. In this case, the hydraulic press pressure is usually 100 to 2000 kg / c.
m 2 . Hereinafter, the present invention will be described in more detail with reference to Examples, but the present invention is not limited to these Examples. In addition, the performance of the sintered body obtained in each example was evaluated by the following method. (Evaluation method of oxidation resistance) 60 mm x 60 mm x 5 mm
Cut out (thickness) test pieces and heat them at 1150 ° C
In a mixed gas of H 2 O and O 2 . For each test piece, the oxidation rate described below was measured. [0013] (oxidation rate) y = x / 1.00 × 10 6/100 [ppm / h
r] In the above equation, in the initial stage of oxidation, Si
Oxidation test is started for 100 hours because an O 2 coating is formed.
The weight of the subsequent test piece was set to 1.00, and
The weight after 0 hr was defined as x. If the oxidation rate y exceeds 50, the oxidation proceeds quadratically even when used in a normal atmospheric atmosphere, resulting in deterioration of the material (sintered body). On the other hand, when y is 50 or less, since the oxidation rate gradually decreases, it can be said that the material can withstand long-term use at high temperatures. (Examples 1 to 9 and Comparative Examples 1 to 5) SiC fine powder having an average particle diameter of 3 μm and SiC coarse powder having an average particle diameter of 100 μm were mixed at a ratio of 30:70 (weight ratio).
Graphite powder having an average particle size of 1 μm was mixed at a predetermined ratio. 100 parts by weight of this mixture was mixed with 2 parts by weight of an organic binder (methyl cellulose) and 3 parts by weight of water or an organic solvent to obtain a raw material for molding. At this time, SiC raw materials and C raw materials containing predetermined amounts of Ca, Al, and Fe as impurities are mixed using the raw materials, and the amounts of these impurities are set to values as shown in Table 1 in consideration of the metal Si raw materials to be impregnated later. Was controlled. Next, these forming raw materials are crushed using a ball mill, the crushed forming raw materials are introduced into a mold, and are formed at 500 kg / cm 2 using a hydraulic press to have a thickness of 5 m.
Thus, a plate-shaped molded product (400 mm × 400 mm) was obtained. Next, the plate-shaped compact and the metal Si were placed in a carbon crucible provided with a reaction preventing layer of BN (boron nitride) coating. At this time, the metal Si required for realizing the porosity of 0.8% is compared to the theoretical amount of metal Si.
Was appropriately changed so that the amount was excessive by the magnification shown in Table 1. The plate-shaped formed body and the metal Si are placed in a vacuum of 0.1 Torr between room temperature and 600 ° C. for 600 minutes.
To 1000 ° C. under an argon gas atmosphere of 2 Torr, and up to 1000 to 1800 ° C. in an argon gas atmosphere.
By firing under a reduced pressure of Torr, Si-SiC impregnated with metallic Si and controlling the amount of impurities such as Ca
A sintered body was manufactured. The holding time at the maximum temperature (1800 ° C.) was 3 hours. The temperature was raised at a rate of 10 ° C./hr between 1400 and 1500 ° C. Table 1 shows the measurement results, the porosity, the composition, and the like of the oxidation resistance of the obtained Si—SiC sintered body. [Table 1] As is apparent from Table 1, the Si-
It can be seen that the SiC-based sintered body has an oxidation rate of 50 ppm / hr or less and has excellent oxidation resistance. As described above, according to the present invention,
The porosity of the Si-SiC sintered body and the amount of Ca and other impurities mixed in the SiC raw material, the C raw material, the metal Si raw material, and the like are controlled, so that they have excellent oxidation resistance and can withstand long-term use. A method for producing the obtained Si-SiC sintered body can be provided. In addition, it becomes possible to manufacture the Si-SiC sintered body with extremely high reproducibility. Therefore,
The sintered body of the present invention can be preferably used for a shelf plate for a rapid firing furnace, a sagger, a kiln tool such as a sheath, particularly a shelf plate for tile firing using a roller hearth kiln, which emphasizes oxidation resistance and the like.
Claims (1)
てＳｉ−ＳｉＣ質焼結体を製造するに当たり、 １〜１２重量％のＣ粉体と８８〜９９重量％のＳｉＣ粉
体とを混合し、 この混合に際し、上記Ｃ粉体、ＳｉＣ粉体及び後に添加
する金属Ｓｉに含まれる不純物の量が、製造せんとする
焼結体のＳｉとＳｉＣとから成る主相１００重量部に対
して、Ｃａが０．０１〜０．１重量部、Ａｌが０．０２
〜０．３７重量部、及びＦｅが０．０７〜０．３６重量
部であり、これらの不純物の総量が０．８重量部以下と
なるように、上記Ｃ粉体とＳｉＣ粉体とを調整・混合
し、 得られた混合物１００重量部に対して０．１〜１５重量
部のバインダを添加して成形原料を得、次いで、この成
形原料を成形して成形体を得、 この成形体を１４５０〜２５００℃の減圧の金属Ｓｉ雰
囲気中で焼成するに際し、得られる焼結体の気孔率が
０．８％以下となる理論量より１．０５倍以上過剰量の
金属Ｓｉを、該成形原料に添加・焼成して焼結体を得る
ことを特徴とするＳｉ−ＳｉＣ質焼結体の製造方法。(57) [Claims 1] In producing a Si-SiC sintered body using C powder, SiC powder and metallic Si, 1 to 12% by weight of C powder and 88% are used. And 99% by weight of SiC powder, and the amount of impurities contained in the C powder, the SiC powder, and the metal Si added later depends on the amount of Si and SiC of the sintered body to be manufactured. 0.01 to 0.1 parts by weight of Ca and 0.02 parts by weight of Al with respect to 100 parts by weight of the main phase consisting of
The C powder and the SiC powder were adjusted so that the total amount of these impurities was 0.8 parts by weight or less, and the total amount of these impurities was 0.87 parts by weight or less. Mixing, adding 0.1 to 15 parts by weight of a binder to 100 parts by weight of the obtained mixture to obtain a forming raw material, and then forming the forming raw material to obtain a molded body; When firing in a metal Si atmosphere at a reduced pressure of 1450 to 2500 ° C., a metal material having an excess of 1.05 times or more as much as the theoretical amount that the porosity of the obtained sintered body is 0.8% or less, A method for producing a Si-SiC-based sintered body, characterized in that a sintered body is obtained by adding and baking to a sintered body.
Priority Applications (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP23845792A JP3437194B2 (en) | 1992-09-07 | 1992-09-07 | Oxidation resistant Si-SiC sintered body |
| PCT/JP1993/000759 WO1993025859A1 (en) | 1992-06-08 | 1993-06-07 | Shelf plate having anti-spalling, anti-creep and oxidation resistant properties |
| DE4392693T DE4392693T1 (en) | 1992-06-08 | 1993-06-07 | Inserts resistant to temperature changes, creep and oxidation resistant |
| CN 93108410 CN1076468C (en) | 1992-06-08 | 1993-06-08 | Spallingproof, crackingproof and oxidizingproof plate |
| US08/734,126 US5840436A (en) | 1992-06-08 | 1996-10-21 | Spalling-resistant, creep-resistant and oxidation-resistant setters |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP23845792A JP3437194B2 (en) | 1992-09-07 | 1992-09-07 | Oxidation resistant Si-SiC sintered body |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0692735A JPH0692735A (en) | 1994-04-05 |
| JP3437194B2 true JP3437194B2 (en) | 2003-08-18 |
Family
ID=17030514
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP23845792A Expired - Lifetime JP3437194B2 (en) | 1992-06-08 | 1992-09-07 | Oxidation resistant Si-SiC sintered body |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3437194B2 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR101819748B1 (en) * | 2010-08-11 | 2018-01-17 | 엔지케이 인슐레이터 엘티디 | Setter for firing |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH10167831A (en) * | 1996-12-16 | 1998-06-23 | Ngk Insulators Ltd | Sic fiber reinforced si-sic composite material and its production |
| JP3980262B2 (en) | 2000-10-31 | 2007-09-26 | 日本碍子株式会社 | SiC heat treatment jig |
-
1992
- 1992-09-07 JP JP23845792A patent/JP3437194B2/en not_active Expired - Lifetime
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR101819748B1 (en) * | 2010-08-11 | 2018-01-17 | 엔지케이 인슐레이터 엘티디 | Setter for firing |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0692735A (en) | 1994-04-05 |
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