JP3424627B2 - Semiconductor device, three-dimensional semiconductor device using the same, method of manufacturing the same, and template - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a semiconductor device capable of forming a three- dimensional semiconductor device of two stages or more or three stages or more of multi-stage connecting structure by using only one type of the semiconductor device, the three-dimensional semiconductor device using it and a method for manufacturing it as well as a template. SOLUTION: The semiconductor device 1 has an integrated circuit formed on a board, and pads 3 formed to electrically connect the circuit. The device 1 comprises a multi-stage connecting electrode 2 for electrically connecting the other semiconductor device and plane electric connectors 4 connected to the pads 3 to become a circuit pattern.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor device, a three-dimensional semiconductor device using the same, a method of manufacturing the same, and a template.
The present invention relates to a semiconductor device capable of forming a three-dimensional structure by stacking a plurality of types of semiconductor devices, a three-dimensional semiconductor device using the semiconductor device, a method of manufacturing the same, and a template.

[0002]

2. Description of the Related Art Conventionally, as a semiconductor device having a three-dimensional structure in which a plurality of semiconductor substrates each having a semiconductor integrated circuit are stacked to form a three-dimensional structure, for example, Japanese Patent Laid-Open No. 04-34075.
There is a semiconductor device disclosed in Japanese Patent No. 8 publication. As shown in FIG. 18, this semiconductor device includes semiconductor chips 57 and 5 which are semiconductor substrates having a semiconductor integrated circuit formed on one main surface.
9 are arranged so that their main surfaces face each other with the anisotropic conductive resin 58 interposed therebetween, and the bumps 51 to 53 are provided on the pads (electrode portions) 61 to 63 of the semiconductor chip 57, respectively.
And the pads 61 to 6 are formed on the semiconductor chip 59.
Pads (electrode portions) 64 to 6 facing each other
6 are formed, and protruding electrodes 54 to 57 are also formed on these pads 64 to 66, respectively.

In this semiconductor device, an anisotropic conductive resin 58 is placed on a semiconductor chip 59, and the protruding electrodes 51 to 53 of the semiconductor chip 57 are placed on the lower side to face the protruding electrodes 54 to 57 of the semiconductor chip 59. Then, the semiconductor chips 57 and 59 are electrically connected to each other by thermocompression bonding and curing the anisotropic conductive resin 58.

[0004]

By the way, in the above-described conventional semiconductor device, two semiconductor chips 57 and 59 are arranged so as to face each other with the anisotropic conductive resin 58 interposed therebetween. There is a problem that a semiconductor chip, that is, the semiconductor chip 57 and a semiconductor chip 59 having a similar electrical characteristic obtained by inverting the circuit pattern of the semiconductor chip 57 are required, and one type of semiconductor chip cannot be used. Further, since two semiconductor chips are arranged so as to face each other, two-stage connection is possible, but
There is a problem in that it is not possible to connect more than one stage.

Further, there is a problem in that it is necessary to always form a protruding electrode on each pad that is an electrical connection point of the semiconductor chip. Further, when a semiconductor device having a three-dimensional structure is constructed, there is a problem that it is affected by the yield of one of the semiconductor chips. Therefore, in the conventional semiconductor device having a three-dimensional structure, there are various problems such that it is difficult to achieve high integration because the multi-stage connection is not possible and management cost is high.

The present invention has been made in view of the above circumstances, and it is possible to form a three-dimensional semiconductor device having a multistage connection structure of two stages or three or more stages by using only one type of semiconductor device. An object of the present invention is to provide a semiconductor device, a three-dimensional semiconductor device using the same, a manufacturing method thereof, and a template.

[0007]

In order to solve the above problems, the present invention employs the following semiconductor device, a three-dimensional semiconductor device using the same, a manufacturing method thereof and a template. That is, in the semiconductor device according to claim 1, in a semiconductor device in which an integrated circuit is formed on a substrate and a pad electrically connected to the integrated circuit is formed, the semiconductor device is electrically connected to another semiconductor device. The multi-stage connection electrode part and the plane electrical connection part which is connected to the pad and serves as a circuit pattern are provided .
The connecting portion is characterized by being made of an anisotropically conductive resin molded body integrally molded .

[0008]

[0009] The semiconductor device according to claim 2 is the semiconductor device according to claim 1, wherein the anisotropic conductive resin molded body, the circuit pattern, pads connection projection connected to said pad, and the other It is characterized in that a multi-stage connection projection is formed for electrical connection with the semiconductor device.

According to a third aspect of the present invention, in the semiconductor device according to the second aspect , the circuit pattern, the pad connecting protrusion and the multi-stage connecting protrusion are electrically connected to another semiconductor device. It is characterized in that it is compressed within a range of compressibility having conductivity.

A three-dimensional semiconductor device according to a fourth aspect is claimed.
A plurality of semiconductor devices according to any one of items 1 to 3 are stacked and electrically connected to each other.

A three-dimensional semiconductor device according to a fifth aspect is claimed.
The semiconductor device according to any one of items 1 to 3 and the heat radiator are alternately stacked to form a plurality of stages, and these semiconductor devices are electrically connected.

A three-dimensional semiconductor device according to a sixth aspect is claimed.
The semiconductor device according to any one of items 1 to 3 and the insulator are alternately stacked to form a plurality of stages, and these semiconductor devices are electrically connected.

A three-dimensional semiconductor device according to claim 7 is a claim
The three-dimensional semiconductor device according to Item 4, 5 or 6 , wherein a conductor having solder wettability is formed on an external connection terminal portion of the semiconductor device, and solder is formed on the conductor. There is.

According to an eighth aspect of the present invention, there is provided a method of manufacturing a three-dimensional semiconductor device, wherein a semiconductor device having an integrated circuit formed on a substrate and pads electrically connected to the integrated circuit, and another semiconductor device are electrically connected to each other. Anisotropically conductive resin molded bodies having a multi-stage connection electrode portion for electrically connecting and a planar electrical connection portion which is connected to the pad and serves as a circuit pattern are alternately stacked to form a plurality of semiconductor devices. It is characterized in that the anisotropically conductive resin molded body is heated and pressed in the stacking direction to integrate them.

According to a ninth aspect of the present invention, there is provided a method of manufacturing a three-dimensional semiconductor device, wherein a semiconductor device having an integrated circuit formed on a substrate and pads electrically connected to the integrated circuit and another semiconductor device are electrically connected to each other. Anisotropic conductive resin molded body having a multi-stage connection electrode portion for electrically connecting and a planar electric connection portion which is connected to the pad and serves as a circuit pattern, and a heat radiator are alternately stacked to form a plurality of stages. The semiconductor device, the anisotropic conductive resin molded body, and the radiator are heated and pressed in the stacking direction to integrate them.

According to a tenth aspect of the present invention, there is provided a method of manufacturing a three-dimensional semiconductor device, wherein a semiconductor device having an integrated circuit formed on a substrate and a pad electrically connected to the integrated circuit, and another semiconductor device are electrically connected to each other. Anisotropic conductive resin molded body having a multi-stage connection electrode portion for electrically connecting, and a planar electrical connection portion that is connected to the pad and serves as a circuit pattern, and an insulator are alternately superposed to form a plurality of stages. The semiconductor device, the anisotropic conductive resin molded body, and the insulator are heated and pressed in the stacking direction to integrate them.

The method of manufacturing a three-dimensional semiconductor device of claim 11, wherein, in the method for manufacturing a three-dimensional semiconductor device according to claim 8, 9 or 10, wherein the anisotropic conductive resin molded body, the circuit pattern, It is characterized in that a pad connecting protrusion for connecting to the pad and a multi-stage connecting protrusion for electrically connecting with another semiconductor device are formed.

The template according to claim 12 is a template according to claim
A template used for molding the anisotropically conductive resin molded body according to 2 or 11 , wherein the surface has a concave-convex portion having a complementary shape with the circuit pattern, a protrusion for pad connection, and a concave shape having a complementary shape, and It is characterized in that a concave portion having a shape complementary to that of the multi-stage connecting projection is formed.

The method of manufacturing a three-dimensional semiconductor device according to claim 13 is the method of manufacturing a three-dimensional semiconductor device according to claim 11.
In, the anisotropic conductive resin is supplied to the template according to claim 12 to obtain the anisotropic conductive resin molded body .

The method of manufacturing a three-dimensional semiconductor device according to claim 14 is the method of manufacturing a three-dimensional semiconductor device according to claim 11.
In, to prepare a claim 12 groups electroforming die templates according to supply anisotropic conductive resin to the power metal casting mold, prior to
The feature is that an anisotropic conductive resin molded body is obtained .

A three-dimensional semiconductor device according to claim 15 is a contractor.
In the method for manufacturing a three-dimensional semiconductor device according to claim 8, 9, or 10 , a conductive paste having solder wettability is applied to an external connection terminal portion of the semiconductor device and then cured to form a conductor, It is characterized in that solder is formed on the conductor.

[0023]

BEST MODE FOR CARRYING OUT THE INVENTION Embodiments of a semiconductor device of the present invention, a three-dimensional semiconductor device using the same, and a method of manufacturing the same will be described with reference to the drawings.

[First Embodiment] FIG. 1 shows a first embodiment of the present invention.
FIG. 9 is a cross-sectional view showing the semiconductor device of the embodiment, showing the structure of a single semiconductor device that is the basis of a three-dimensional semiconductor device using an anisotropic conductive resin. In this semiconductor device, a semiconductor integrated circuit is formed on one main surface of a semiconductor device (semiconductor device) 1, pads 3 of the semiconductor device are formed on the other main surface, and the semiconductor device 1 is made of an anisotropic conductive resin. , A circuit pattern (not shown), the multi-stage connection electrode portion 2 and the planar electrical connection portion 4 are formed.

The anisotropic conductive resin has conductivity when it is compressed in a uniaxial direction. For example, a thermosetting epoxy resin mixed with conductive fine particles is preferably used. This semiconductor device includes a pad 3 of the semiconductor device 1.
It is manufactured by forming the multi-stage connection electrode part 2 and the planar electrical connection part 4 of the anisotropic conductive resin on the side where the is formed.

[Second Embodiment] FIG. 2 shows a second embodiment of the present invention.
It is a cross-sectional view showing a three-dimensional semiconductor device of the embodiment of,
It is an example in which the semiconductor devices of the first embodiment are stacked in four stages.
In order to manufacture this three-dimensional semiconductor device, first, on the side where the pad 3 of the semiconductor device 1 is formed, the multi-stage connection electrode part 2 and the planar electrical connection part 4 are formed by anisotropic conductive resin to form a three-dimensional semiconductor device. A single semiconductor device that is the basis of a semiconductor device. Then, the semiconductor devices are stacked and connected in four steps to form a three-dimensional semiconductor device having a four-step stack structure.
In addition, 5 is a multistage connection part. In the present embodiment, there is no limitation on the number of connection stages because the structure is such that even one type of semiconductor device 1 can be connected in multiple stages.

[Third Embodiment] FIG. 3 shows a third embodiment of the present invention.
FIG. 3 is a cross-sectional view showing a three-dimensional semiconductor device with a heat sink according to the embodiment of the present invention, in which the semiconductor device of the first embodiment and a flat heat sink (heat radiator) 6 are alternately laminated to form a four-stage structure. is there. In order to manufacture this three-dimensional semiconductor device with a heat sink, first, on the side where the pad 3 of the semiconductor device 1 is formed, the multi-stage connection electrode portion 2 and the planar electrical connection portion 4 are formed by anisotropic conductive resin. A single semiconductor device that is the basis of a three-dimensional semiconductor device. Next, the semiconductor device and the heat sink 6 are alternately overlapped and four layers are alternately laminated and connected to each other to form a three-dimensional semiconductor device with a heat sink having a four-stage stack structure. According to this manufacturing method, the anisotropic conductive three-dimensional semiconductor device can be easily obtained in a short time.

[Fourth Embodiment] FIG. 4 shows a fourth embodiment of the present invention.
FIG. 9 is a cross-sectional view showing the method for manufacturing an anisotropic conductive resin molded body according to the embodiment of the present invention, which is used for the three-dimensional semiconductor device of the present invention. In order to manufacture this anisotropically conductive resin molded body, first, the silicon template 8 is prepared. As shown in FIG. 5, a wiring portion 9 of the semiconductor device 1 is formed on the silicon template 8 by using anisotropic etching or isotropic etching.
Anisotropic conductive resin bump 10 for semiconductor device pad connection
And the anisotropic conductive resin forming pits 1 for the wiring portion at the positions corresponding to the anisotropic conductive resin bumps 11 for multi-stage connection, respectively.
2. An anisotropic conductive resin bump forming pit 13 for semiconductor device pad connection and an anisotropic conductive resin bump forming pit 14 for multi-stage connection are formed.

The size and depth of the pits are set by the lithography technique so that the conductivity becomes an ideal compression ratio when a single semiconductor device which is the basis of the anisotropic conductive resin three-dimensional semiconductor device is formed. Is processed with high precision. Anisotropic conductive resin is injected onto the silicon template 8 by injection molding or the like to form the wiring portion 9 of the semiconductor device 1, the anisotropic conductive resin bump 10 for connecting semiconductor device pads, and the anisotropic conductive resin bump for multi-stage connection. An anisotropic conductive resin molded body 7 having a protrusion having the same shape as 11 is molded.

Here, using the silicon template 8 processed with high precision by the lithography technique and the etching technique, the anisotropic conductive resin bump for multi-stage connection and the semiconductor device pad connection for connecting to the pad of the semiconductor device 1 are used. Since the anisotropic conductive resin bumps and the anisotropic conductive resin projections for forming the wiring conductor are formed, the anisotropic conductive resin molded body 7 with high accuracy can be formed. The highly accurate anisotropic conductive resin molded body 7 is a silicon template 8
Since it can be integrally molded in a short time by the injection molding method using, it can be easily manufactured at low cost.

[Fifth Embodiment] FIG. 6 shows a fifth embodiment of the present invention.
FIG. 6 is a cross-sectional view showing the method for manufacturing the anisotropic conductive resin molded body according to the embodiment. In this method of manufacturing an anisotropic conductive resin molded body, the silicon template 8 is set in the mold 15, and the anisotropic conductive resin 16 is press-fitted from the injection port 15a of the mold 15. As a result, a shape complementary to the anisotropic conductive resin forming pit 12 for the wiring portion, the anisotropic conductive resin bump forming pit 13 for semiconductor device pad connection, and the anisotropic conductive resin bump forming pit 14 for multi-stage connection is formed. It is possible to obtain the anisotropic conductive resin molded body 7 in which the plurality of protrusions are formed. A typical example of the press-fitting method is the injection molding method, but the method is not limited to this.

[Sixth Embodiment] FIGS. 7 and 8 are sectional views showing a method for manufacturing a three-dimensional semiconductor device according to a sixth embodiment of the present invention. First, as shown in FIG. 7, anisotropically conductive resin molded bodies 7 and semiconductor devices 1 are alternately laminated and pressed 17 using a press 18 having a guide 19 structure. As a result, a three-dimensional semiconductor device in which the anisotropic conductive resin molded body 7 and the semiconductor device 1 are integrally molded as shown in FIG. 8 can be obtained.

In the present embodiment, in order to obtain a three-dimensional semiconductor device in which one type of semiconductor device is connected in multiple stages, the anisotropic conductive resin forming pit 1 for the wiring portion for connecting in multiple stages.
2, anisotropic conductive resin bump pits 13 for semiconductor device pad connection and anisotropic conductive resin bump pits 14 for multi-stage connection are formed with a plurality of protrusions complementary to each other The resin molding 7 is used.

This anisotropic conductive resin molded body 7 is formed by the following steps: anisotropic conductive resin bump forming pits 14 for multi-stage connection, and semiconductor device pad connection for connecting to semiconductor device pads. Is integrally formed by the injection molding method using the silicon template 8 in which the anisotropic conductive resin bump forming pits 13 and the anisotropic conductive resin protrusion forming pits 12 for forming the wiring conductors are formed. Therefore, a highly accurate anisotropic conductive resin molded body can be manufactured in a short time. By aligning the highly accurate anisotropically conductive resin molded body 7 and the pads of the semiconductor device and alternately stacking a desired number of steps and collectively thermocompression bonding, the anisotropically conductive three-dimensional semiconductor can be easily manufactured in a short time. The device can be obtained.

Since the bumps and the protrusions are formed on the anisotropically conductive resin molded body, it is not necessary to form the protrusions on the semiconductor device side. Therefore, a low-cost anisotropic conductive three-dimensional semiconductor device with high integration and low management cost can be realized.

[Seventh Embodiment] FIG. 9 shows a seventh embodiment of the present invention.
FIG. 9 is a cross-sectional view showing the method of manufacturing the three-dimensional semiconductor device of the embodiment. First, the semiconductor device 1, the anisotropic conductive resin molded body 7, and the plate-shaped insulator (or heat sink) 20 are alternately laminated, and pressure 17 is applied using a press 18 having a guide 19 structure. This makes it possible to obtain an integrally molded three-dimensional semiconductor device with improved insulation characteristics (or heat dissipation characteristics).

[Eighth Embodiment] FIGS. 10 to 14 are sectional views showing a method of manufacturing an anisotropic conductive resin molded body according to an eighth embodiment of the present invention. It is a figure explaining the manufacturing process of the electroforming plating metal molds, such as the injection molding method used for manufacturing a body. First, as shown in FIG. 10, the anisotropic conductive resin forming pits 12 for wiring portions, the anisotropic conductive resin bump forming pits 13 for semiconductor device pad connection, and the anisotropic conductive resin bumps for multi-stage connection are formed on the upper surface. Electroplating 21 is performed on the silicon template 8 on which the pits 14 for forming are formed, and as shown in FIG. 11, pits 12 for forming the anisotropic conductive resin for the wiring portion, and anisotropic conductive resin bumps for connecting the semiconductor device pads are formed. An electroformed plating die 22 having complementary projections formed at positions corresponding to the pits 13 and the anisotropic conductive resin bump forming pits 14 for multistage connection is manufactured.

Next, as shown in FIG. 12, electroforming plating 23 is applied to the electroforming plating die 22 to form the anisotropic conductive resin forming pits 12 for wiring portions and the semiconductor device pad connection as shown in FIG. The electroformed plating mold 24 having the anisotropic conductive resin bump forming pits 13 and the multi-stage connecting anisotropic conductive resin bump forming pits 14 is manufactured. By carrying out such a manufacturing process, it is possible to manufacture the electroformed plating die 24 which is made of electroformed plating and has the same shape as the original silicon template 8 and which is durable.

Thereafter, an anisotropic conductive resin is injected into the electroformed plating die 22 by an injection molding method or the like to form the anisotropic conductive resin forming pits 12 for wiring portions and the semiconductor device pads as shown in FIG. Manufacture of an anisotropic conductive resin molded body 7 in which protrusions having a complementary shape are formed at positions corresponding to the anisotropic conductive resin bump forming pits 13 for connection and the anisotropic conductive resin bump forming pits 14 for multi-stage connection. To do.
Since the electroformed plating mold 24 is made of durable electroformed plating having the same shape as the silicon template 8, it is possible to obtain the anisotropic conductive resin molded body 7 with extremely high accuracy.

[Ninth Embodiment] FIG. 15 is a plan view showing a heat sink according to a ninth embodiment of the present invention. This heat sink 6 is used when a plurality of semiconductor devices 1 are stacked and connected in multiple stages. It is inserted between the semiconductor devices 1 to improve the heat dissipation characteristics. This heat sink 6
Is formed with anisotropic conductive resin bump connection holes 25 for heat sink multi-stage connection through which conductive resin bumps 11 for multi-stage connection for multi-stage connection are formed on both sides of the plate-shaped heat sink body. The material of the heat sink 6 may be a material having a high heat dissipation property such as an inorganic material or an organic material having a high heat dissipation property.

[Tenth Embodiment] FIG. 16 is a plan view showing an insulating sheet according to a tenth embodiment of the present invention.
This insulating sheet 17 is inserted between the semiconductor devices 1 in order to improve insulating characteristics when a plurality of semiconductor devices 1 are stacked and connected in multiple stages. This insulation sheet 1
7 is formed with an insulating multi-stage connecting anisotropic conductive resin bump connecting hole 26 through which the multi-stage connecting conductive resin bump 11 for multi-stage connecting is formed on each side of the sheet body. The material of the insulating sheet 17 may be a highly insulating material such as a highly insulating inorganic material or an organic material.

[Eleventh Embodiment] FIG. 17 is a sectional view showing a three-dimensional semiconductor device according to an eleventh embodiment of the present invention. The anisotropic conductive three-dimensional semiconductor device of the present invention is used as a mother board and a PWB. In order to improve the mountability, a conductive paste 27 for solder formation having good solder wettability is formed on the mounting surface side of the anisotropic conductive three-dimensional semiconductor device, and is mounted on the conductive paste 27. Further, the structure is such that solder 28 is formed. In this three-dimensional semiconductor device, a solder forming conductive paste 27 having good solder wettability is formed at a location of the multi-stage connection electrode portion 2 of the anisotropic conductive three-dimensional semiconductor device by a dispensing method, a printing method, or the like, and thereafter. , Dry and cure. Next, a solder 28 is formed on the conductive paste 27 by a dispensing method, a printing method, or the like, and is formed by performing reflow, heating, or the like.

The embodiments of the semiconductor device of the present invention, the three-dimensional semiconductor device using the same, and the method of manufacturing the same have been described above with reference to the drawings, but the specific configuration is limited to the present embodiment. However, the design can be changed without departing from the scope of the present invention.

[0044]

As described above, according to the semiconductor device of the present invention, a multi-stage connection electrode portion for electrically connecting to another semiconductor device and a plane which is connected to the pad and serves as a circuit pattern. Since the electric connection portion is provided, it is possible to obtain a three-dimensional semiconductor device in which a desired number of stages are connected using only one type of the semiconductor device. Also, an anisotropic conductive resin molded body in which an electrode portion for multi-stage connection and a planar electrical connection portion are integrally molded
Therefore, a three-dimensional semiconductor device can be easily obtained by using a device having a simple structure.

If the anisotropic conductive resin molded body is formed with the circuit pattern, the pad connecting projections for connecting to the pads, and the multi-step connecting projections for electrically connecting to another semiconductor device, Since it is not necessary to form bumps on the semiconductor device side, a normal semiconductor device can be used as it is. As a result, the cost of bump formation becomes unnecessary,
The process can be shortened. If a circuit pattern, that is, an anisotropic conductive resin protrusion for forming a wiring conductor, is formed on this anisotropic conductive resin molded body, a wiring system carrier or a circuit board becomes unnecessary.

According to the three-dimensional semiconductor device of the present invention, it is provided with a multi-stage connecting electrode portion for electrically connecting to another semiconductor device, and a planar electrical connecting portion which is connected to the pad and serves as a circuit pattern. Since a plurality of semiconductor devices are superposed and these semiconductor devices are electrically connected, the desired number of stages can be connected using only one kind of the semiconductor device. Further, since only one type of semiconductor device is required, there are effects such as reduction of costs required for development and manufacturing, reduction of management costs, and shortening of schedule.

According to the method for manufacturing a three-dimensional semiconductor device of the present invention, a semiconductor device in which an integrated circuit is formed on a substrate and a pad electrically connected to the integrated circuit is formed; Anisotropically conductive resin molded bodies having a multi-stage connection electrode portion for electrically connecting and a planar electrical connection portion which is connected to the pad and serves as a circuit pattern are alternately stacked to form a plurality of semiconductor devices. Since the anisotropic conductive resin molded body is heated and pressed in the stacking direction to integrate them, the anisotropic conductive three-dimensional semiconductor device can be easily obtained in a short time.

If the semiconductor device, the anisotropically conductive resin molded body, and the radiator are alternately stacked to form a plurality of stages, an integrally molded three-dimensional semiconductor device with improved heat radiation characteristics is obtained. be able to. Further, if the semiconductor device, the anisotropically conductive resin molded body, and the insulator are alternately stacked to form a plurality of stages, an integrally molded three-dimensional semiconductor device with improved insulation characteristics can be obtained. .

Further, the anisotropic conductive resin molded body is provided with the circuit pattern, a pad connecting projection for connecting to the pad, and a multi-step connecting projection for electrically connecting with another semiconductor device. With such a configuration, it is not necessary to form a protrusion on the semiconductor device side, and therefore, it is possible to realize an anisotropic conductive three-dimensional semiconductor device which can achieve high integration and low management cost.

According to the template of the present invention,
Since an uneven portion having a complementary shape to the circuit pattern, a recess having a complementary shape to the projection for pad connection, and a recess having a complementary shape to the projection for multi-stage connection are formed, an anisotropic conductive resin molding is performed by an injection molding method or the like. The body can be integrally molded in a short time, and can be easily manufactured at low cost.

[Brief description of drawings]

FIG. 1 is a cross-sectional view showing a semiconductor device according to a first embodiment of the present invention.

FIG. 2 is a sectional view showing a three-dimensional semiconductor device according to a second embodiment of the present invention.

FIG. 3 is a sectional view showing a three-dimensional semiconductor device with a heat sink according to a third embodiment of the present invention.

FIG. 4 is a cross-sectional view showing a method of manufacturing an anisotropic conductive resin molded body according to a fourth embodiment of the present invention.

FIG. 5 is a sectional view showing a silicon template according to a fourth embodiment of the present invention.

FIG. 6 is a cross-sectional view showing a method of manufacturing an anisotropic conductive resin molded body according to a fifth embodiment of the present invention.

FIG. 7 is a cross-sectional view showing the method of manufacturing the three-dimensional semiconductor device of the sixth embodiment of the present invention.

FIG. 8 is a cross-sectional view showing the method of manufacturing the three-dimensional semiconductor device of the sixth embodiment of the present invention.

FIG. 9 is a cross-sectional view showing the method of manufacturing the three-dimensional semiconductor device of the seventh embodiment of the present invention.

FIG. 10 is a cross-sectional view showing a method for manufacturing an anisotropic conductive resin molded body according to an eighth embodiment of the present invention.

FIG. 11 is a cross-sectional view showing a method of manufacturing an anisotropic conductive resin molded body according to an eighth embodiment of the present invention.

FIG. 12 is a cross-sectional view showing a method of manufacturing an anisotropic conductive resin molded body according to an eighth embodiment of the present invention.

FIG. 13 is a cross-sectional view showing a method of manufacturing an anisotropic conductive resin molded body according to an eighth embodiment of the present invention.

FIG. 14 is a cross-sectional view showing a method for manufacturing an anisotropic conductive resin molded body according to an eighth embodiment of the present invention.

FIG. 15 is a plan view showing a heat sink according to a ninth embodiment of the present invention.

FIG. 16 is a plan view showing an insulating sheet according to a tenth embodiment of the present invention.

FIG. 17 is a sectional view showing a three-dimensional semiconductor device according to an eleventh embodiment of the present invention.

FIG. 18 is a sectional view showing a conventional three-dimensional semiconductor device.

[Explanation of symbols]

DESCRIPTION OF SYMBOLS 1 semiconductor device 2 multi-stage connection electrode section 3 pad 4 planar electrical connection section 5 multi-stage connection section 6 heat sink 7 anisotropic conductive resin molded body 8 silicon template 9 wiring section 10 semiconductor device pad connection anisotropic conductive resin bump 11 multi-stage Anisotropic conductive resin bumps for connection 12 Wiring part forming pits 13 Pit for forming anisotropic conductive resin bumps for connecting semiconductor device pads 14 Pit for forming anisotropic conductive resin bumps for multi-stage connection 15 Electroformed mold 16 Press fitting 17 Pressure 18 Press 19 Guide 20 Plate-shaped insulator (or heat sink) 21 Electroforming plating 22 Electroforming plating mold 23 Electroforming plating 24 Electroforming plating mold 25 Heat sink Multi-stage connection anisotropic conductive resin bump connection hole 26 Insulation Anisotropic conductive resin bump connection hole 27 for multi-stage body connection Conductive paste 28 for solder formation Solder 51 to 5 Protruding electrodes 57 and 59 semiconductor chips 58 anisotropic conductive resin 61 to 66 pads

Continuation of the front page (56) Reference JP-A-11-145381 (JP, A) JP-A-4-69963 (JP, A) JP-A-10-65096 (JP, A) JP-A-2000-216330 (JP, A) JP 2001-144218 (JP, A) (58) Fields investigated (Int.Cl. ⁷ , DB name) H01L 25/00-25/18

Claims (15)

(57) [Claims] 1. A semiconductor device in which an integrated circuit is formed on a substrate and a pad electrically connected to the integrated circuit is formed, and a multistage connecting electrode portion for electrically connecting to another semiconductor device. A planar electrical connection portion that is connected to the pad and serves as a circuit pattern , wherein the multi-stage connection electrode portion and the planar electrical connection portion are integrated.
A semiconductor device comprising a molded anisotropically conductive resin molded body . 2. The anisotropic conductive resin molding is provided with the resin
A road pattern, a pad connecting protrusion for connecting to the pad,
And multi-stage connection for electrically connecting to other semiconductor devices
The projection for use is formed, The claim 1 characterized by the above-mentioned.
Semiconductor device. 3. A protrusion for connecting the circuit pattern and the pad
Section and the multi-stage connection projection are electrically connected to other semiconductor devices.
Compressed in the range of compressibility that has conductivity when connected to
The semiconductor device according to claim 2, wherein the semiconductor device is provided. 4. The method according to any one of claims 1 to 3.
Multiple semiconductor devices are stacked and these semiconductor devices are
Three-dimensional semiconductor device characterized by being electrically connected
Place 5. The method according to any one of claims 1 to 3.
Alternately stacking semiconductor devices and heat sinks into multiple stages,
Characterized by electrically connecting these semiconductor devices
3D semiconductor device. 6. The method according to any one of claims 1 to 3.
Alternately stacking semiconductor devices and insulators into multiple stages,
Characterized by electrically connecting these semiconductor devices
3D semiconductor device. 7. A terminal portion for external connection of the semiconductor device,
Form a conductor with solder wettability and solder it to the conductor.
6. A durometer is formed,
The three-dimensional semiconductor device according to item 6. 8. An integrated circuit is formed on a substrate, and the integrated circuit is formed.
Semiconductor device having a pad electrically connected to a circuit
And a multi-stage connection power supply for electrically connecting to other semiconductor devices.
Connects to the poles and the pads and forms a circuit pattern
Alternating anisotropically conductive resin moldings with planar electrical connections
These semiconductor devices and anisotropic conductive resin moldings are heated by stacking them in multiple stages.
At the same time, pressure is applied in the stacking direction to integrate them.
And a method for manufacturing a three-dimensional semiconductor device. 9. An integrated circuit is formed on a substrate, and the integrated circuit is formed.
Semiconductor device having a pad electrically connected to a circuit
And a multi-stage connection power supply for electrically connecting to other semiconductor devices.
Connects to the poles and the pads and forms a circuit pattern
Anisotropic conductive resin molding with planar electrical connection and heat dissipation
The semiconductor device, the anisotropic conductive resin molded body, and the heat radiator are stacked by alternately stacking the body and the body.
Together with heating, pressure is applied in the stacking direction to integrate them.
A method for manufacturing a three-dimensional semiconductor device, comprising: 10. An integrated circuit is formed on a substrate, and the integrated circuit is formed.
Semiconductor device having a pad electrically connected to the integrated circuit
And location, electric for other semiconductor devices electrically connected in multiple stages for connecting
Connects to the poles and the pads and forms a circuit pattern
The anisotropic conductive resin molded body having a planar electrical connection portion and the insulator are alternately stacked to form a plurality of stages, and these semiconductor devices, the anisotropic conductive resin molded body and the insulator are formed.
Together with heating, pressure is applied in the stacking direction to integrate them.
A method for manufacturing a three-dimensional semiconductor device, comprising: 11. The anisotropic conductive resin molded body comprises:
Circuit pattern, pad connecting protrusion for connecting to the pad
Parts and multiple stages for electrically connecting with other semiconductor devices
The projection for connection is formed, It is characterized by the above-mentioned.
11. The method for manufacturing a three-dimensional semiconductor device according to 8, 9, or 10. 12. The anisotropic conductive material according to claim 2 or 11.
A template used when molding a resin molding
Then, the uneven portion having a shape complementary to the circuit pattern and the pattern are formed on the surface.
Recess for complementary shape with head connection projection , and for multi-stage connection
Characterized in that a concave portion having a shape complementary to the protrusion is formed
Template. 13. The template according to claim 12 is anisotropic.
Supply the conductive resin to obtain the anisotropic conductive resin molding
The three-dimensional semiconductor device according to claim 11, wherein
Production method. 14. A template according to claim 12
Produce an electroformed mold and supply anisotropic conductive resin to the electroformed mold
Then, the anisotropic conductive resin molded body is obtained.
The method for manufacturing a three-dimensional semiconductor device according to claim 11. 15. A terminal portion for external connection of the semiconductor device
Apply a conductive paste with solder wettability to the
After curing to a conductor, then solder to the conductor
It is formed, The claim 8, 9 or 10 characterized by the above-mentioned.
For manufacturing a three-dimensional semiconductor device.