JP3402369B2 - Oscillator module - Google Patents

Oscillator module

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Publication number
JP3402369B2
JP3402369B2 JP29444691A JP29444691A JP3402369B2 JP 3402369 B2 JP3402369 B2 JP 3402369B2 JP 29444691 A JP29444691 A JP 29444691A JP 29444691 A JP29444691 A JP 29444691A JP 3402369 B2 JP3402369 B2 JP 3402369B2
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Japan
Prior art keywords
resonance conductor
dielectric layer
resonator
gnd pattern
conductor
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Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP29444691A
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Japanese (ja)
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JPH05136612A (en
Inventor
克彦 林
Original Assignee
ティーディーケイ株式会社
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Priority to JP29444691A priority Critical patent/JP3402369B2/en
Priority claimed from DE1991622748 external-priority patent/DE69122748T2/en
Publication of JPH05136612A publication Critical patent/JPH05136612A/en
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Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an oscillator module such as a VCO (voltage controlled oscillator).
The present invention relates to an oscillator module using a strip line as a resonator.

[0002]

2. Description of the Related Art FIG. 7 is an explanatory diagram of a conventional example, FIG. 7A is a circuit example of a VCO (voltage controlled oscillator), FIG. 7B is an explanatory diagram of a microstrip line, and FIG. 7C is an explanatory diagram of a triplate type strip line. Is.

FIG. 8 is an example of a conventional VCO module, FIG. 8A is a perspective view of VCO module example 1, and FIG. 8B is an exploded perspective view of VCO module example 2. In the figure, R 1
˜R 8 are resistors, C 1 ˜C 11 are capacitors, L 1 and L 2 are coils, CV is a varactor diode (variable capacitance diode), SL is a strip line, CT is a control voltage input terminal, OUT is an output terminal, and Vcc. Is the power supply, Tr 1 , Tr 2
Indicates a transistor.

Further, 1, 1-1 to 1-3 are dielectric layers, 2
Is a resonance conductor, 3-3-1, 3-2 are GND electrodes, 4 is a component (discrete component), 5 is a through-hole electrode, 6
Indicates a margin.

Conventionally, as an oscillator, for example, a VCO (voltage controlled oscillator) as shown in FIG. 7A has been known. This VCO is composed of an oscillating unit and a buffer unit, and the oscillating unit and the buffer unit are coupled via a coupling capacitor C 7 .

In this example, the oscillating unit is a transistor Tr.
1 , strip line SL, varactor diode (variable capacitance diode) CV, capacitors C 1 to C 6 , resistor R
1 to R 4 and a coil L 1 , and the buffer unit includes a transistor Tr 2 , capacitors C 8 to C 11 , and resistors R 5 to R.
8 and the coil L 2 .

Then, when a control voltage is input to the control voltage input terminal CT of the oscillating unit, it oscillates at a frequency corresponding to the control voltage and the output signal of the VCO can be taken out from the output terminal OUT.

By the way, the above-mentioned strip line SL
Constitute a resonator (strip resonator), and examples of mounting forms on a substrate include those shown in FIGS. 7B and 7C. FIG. 7B is an example of a microstrip line in which the resonance conductor 2 is formed on the front surface of the dielectric layer 1 that constitutes the substrate, and the GND pattern is formed on the back surface.

Further, FIG. 7C shows an example in which a resonance conductor 2 is built in a multi-layer substrate and a triplate type strip line is sandwiched on both sides by GND patterns 3-1 and 3-2. That is, the GND pattern 3-1 is formed on the first dielectric layer 1-1 constituting the multilayer substrate, and the second dielectric layer 1-
2 is formed on the second dielectric layer 1-2, and the GND pattern 3-2 is formed on the back surface of the second dielectric layer 1-2, so that the resonance conductor 2 is sandwiched by the GND patterns from both sides via the dielectric layer. It is a strip-type strip line.

An example of the VCO module according to the mounting form of FIG. 7B is shown in FIG. 8A. In this VCO module, a resonance conductor 2 (thick film printing) is formed on the surface of a dielectric layer 1 which constitutes a substrate (single plate or multilayer substrate), and further other components 4 such as transistors and resistors 4 (discrete components). ) Is implemented. Then, the GND pattern 3 (thick film printing) is formed on the back surface of the dielectric layer 1.

An example of a VCO module according to the implementation form of FIG. 7C is shown in FIG. 8B. In this module, a component 4 (discrete component) such as a transistor and a resistor is mounted on a first dielectric layer 1-1 forming a multilayer substrate,
The GND pattern 3-1 is formed on the second dielectric layer 1-2, the resonance conductor 2 is formed on the third dielectric layer 1-3, and the third dielectric layer 1-3 is formed. The GND pattern 3-2 is formed on the back surface.

A margin 6 (a portion having no conductor) is provided in a part of the GND pattern 3-1, and a through hole electrode 5 is provided therein. Then, using the through-hole electrode 5 as a relay point, the resonance conductor 2 and the component 4 are connected by a blind through-hole (a through-hole whose inside is filled with a conductor).

[0013]

SUMMARY OF THE INVENTION The above-mentioned conventional devices have the following problems. (1) In the resonator (see FIG. 7B) in the VCO module shown in FIG. 8A, the capacitance component can be structurally reduced, so that the line impedance Z 0 (Z 0 ∝√L
/ C) is large. In general, when the capacitance component of the transmission line is C, the inductive component of the transmission line is L, the series resistance r s of the transmission line, and the in-medium wavelength of the signal are λg, Q of the transmission line is expressed by the following equation.

Q = (π / λg)  (2Z 0 / r s ) Therefore, as described above, if the line impedance Z 0 can be increased, the Q of the transmission line can be increased.

As a result, the Q of the transmission line can be increased. Further, since the resonance conductor is formed on the surface of the substrate and there is nothing on the upper side, adjustment by trimming and the like can be easily performed, and the substrate can be thin.

On the other hand, however, since the resonance conductor is half exposed in the air, λ / √ε r (λ:
Signal wavelength, ε r : relative permittivity) is not shortened (λ / √ε when the entire circumference of the resonant conductor is covered with a dielectric of ε r )
shorten the wavelength to r ). Thus, λ / √ε r min not reduced to, increased series resistance component of the resonance conductors for resonant conductor length increases (r s) is, Q is deteriorated. Further, since the space factor is large, the VCO module becomes large. Therefore, it is difficult to obtain a small and high Q resonator.

(2) In the resonator (see FIG. 7C) in the VCO module shown in FIG. 8B, the C (capacitance) component tends to be large structurally (the resonance conductor and the GND on both sides thereof).
Since there is a capacitive component between the resonator and the pattern), it becomes difficult to increase the line impedance Z 0 of the resonator and Q tends to decrease. Therefore, it is necessary to set the dielectric layers on both sides of the resonant conductor to be thick, and the VCO module becomes thick.

Further, since the resonance conductor is built in the dielectric layer, the wavelength can be expected to be shortened by λ / √ε r , and the series resistance (r s ) can be reduced by the length of the resonance conductor, so that the Q is high. Become.

On the other hand, however, since the resonance conductor is built in the dielectric layer, it is difficult to adjust the resonator. The present invention solves such a conventional problem, downsizes an oscillator module including a microstrip resonator,
The purpose is to increase the Q and facilitate adjustment of the resonance frequency.

[0020]

FIG. 1 is a principle diagram of the present invention. FIG. 1A is a first principle diagram (corresponding to claims 1 and 2), and FIG. 1B is a second principle diagram. It is a figure (corresponding to claim 3).

In the figure, the same symbols as those in FIGS. 7 and 8 indicate the same components. Further, 3-1A indicates a GND pattern, and 11 indicates an electrode pattern for trimming. The present invention has the following configuration to solve the above problems.

(1) An oscillator module having a strip resonator by a strip line, and at least a resonance conductor 2 of the strip resonator set inside a multilayer substrate, wherein: The GND pattern 3-2 is set on one side (lower side) of the resonance conductor 2 via the dielectric layer 1-3, and the GND pattern 3-2 is provided on the other side (upper side) of the resonance conductor facing the resonance conductor. In addition to providing the dielectric layers 1-1 and 1-2 without setting a pattern ,
Oscillator, strip resonator and oscillation transistor
It includes an oscillating unit including a buffer unit and an oscillating transistor
The oscillator is mounted separately from the buffer and the oscillation
The resonant conductor of the strip resonator is
Body 2 is set.

[0023]

(2) In the above configuration (1), the GND pattern 11 for trimming is formed at a part of the surface of the multilayer substrate, which partly overlaps the resonance conductor 2 in the stacking direction.
Is set, and the GND pattern 11 for trimming is trimmed so that the strip resonator can be adjusted.

[0025]

The operation of the present invention based on the above construction will be described with reference to FIG. In FIG. 1A, a GND pattern (solid GND pattern) 3-2 is set below the resonant conductor 2 of the strip resonator via a third dielectric layer 1-3. However, on the upper side of the resonance conductor 2, the first and second
The dielectric layers 1-1 and 1-2 are laminated, but the GND pattern is not set.

Note that G provided on the second dielectric layer 1-2.
The ND pattern 3-1A is for preventing the resonance conductor 2 from being adversely affected from the outside, and
Is not substantially set in the portion facing the resonance conductor on the upper side (in the stacking direction).

In this way, the C component can be structurally made small (compared to the case where the GND pattern is provided on both sides of the resonance conductor 2), so that the line impedance can be made large. Therefore, the Q of the transmission line can be increased. Further, since the dielectric layers are provided on both sides of the resonant conductor 2, it is possible to expect a wavelength reduction of λ / √ε r , and the size can be reduced accordingly.

Therefore, an oscillator module having a small and high Q strip resonator can be obtained. Further, with the configuration (2), the resonance conductor 2 is less susceptible to external voltage fluctuations and other influences, so that good oscillation characteristics can be obtained.

In FIG. 1B, the GND pattern 11 for trimming is set on the first dielectric layer 1-1 (the surface of the multilayer substrate), and the blind through hole 13 is used to
GND pattern 3-formed on the second dielectric layer 1-2
It is connected to 1A. When adjusting the resonance frequency,
The ND pattern 11 is trimmed and adjusted. With this configuration, the resonance frequency of the strip resonator can be adjusted even when the resonance conductor 2 is set inside the multilayer substrate.

[0030]

Embodiments of the present invention will be described below with reference to the drawings. (Description of First Embodiment) FIGS. 2 to 3 are views showing a first embodiment of the present invention, FIG. 2 is an exploded perspective view of a VCO module, and FIG. 3 is a sectional view taken along line XY of FIG. It is a figure.

In the figure, the same reference numerals as those in FIGS. 1, 7 and 8 indicate the same parts. Further, 8 is a wiring pattern, 9 is a margin, and 10
Is a side GND electrode, 3-1A is a GND pattern, 1-
1-15 show a dielectric layer.

In the first embodiment, a VCO (voltage controlled oscillator) having the circuit configuration shown in FIG.
This is an example of an O module. First as a multi-layer substrate
~ The fifth dielectric layers 1-1 to 1-5 are used.

As shown in FIG. 7A, the VCO is composed of an oscillating section and a buffer section.
The voltage fluctuation on the output side of CO does not adversely affect the oscillator. When mounting such an oscillating unit and a buffer unit, they are arranged separately.

That is, the oscillating section is arranged around the transistor Tr 1 and the buffer section is arranged around the transistor Tr 2 and mounted. In FIGS. 2 and 3, the oscillating unit is arranged on the left side and the buffer unit is arranged on the right side.

As shown in FIGS. 2 and 3, the transistors Tr 1 and Tr are provided on the first dielectric layer 1-1 of the multilayer substrate.
2 and other parts 4 (discrete parts) are mounted,
The coil L 2 , the wiring pattern 8 and the like are formed on the second dielectric layer 1-2 (thick film printing).

On the third dielectric layer 1-3, a GND pattern 3-1A is formed (thick film printing) on the other portion, leaving a blank space 9, and on the fourth dielectric layer 1-4. The resonance conductor 2 is formed (thick film printing), and the GND pattern (solid GND pattern) 3-2 is formed (thick film printing) on the fifth dielectric layer 1-5.

Further, each of the above-mentioned patterns is drawn out as a conductor pattern to the end of the dielectric layer, and the GND side is connected to the GND electrode 10 formed on the side surface,
SMD (Surface mount component). Although only one GND electrode 10 is illustrated as a side surface electrode in FIG. 3, in reality, a plurality of electrodes such as a control voltage input terminal and an output terminal are provided outside the GND electrode, and a predetermined electrode is provided. Connect to the electrode of.

The resonance conductor 2 is a conductor forming a resonator by the strip line SL shown in FIG. 7A, and is patterned into a shape as shown in FIG. 2, for example. Margin 9 is
The resonance conductor 2 is formed on the upper side of the resonance conductor 2 while having a shape (slightly larger than the resonance conductor 2) substantially matching the shape of the resonance conductor 2.

That is, when the dielectric layers 1-1 to 1-5 are laminated, the GND pattern 3-1A is not present on the upper side (laminating direction) of the resonant conductor 2. Therefore, the GND pattern 3-1A leaves the margin 9 and leaves the other pattern.

It should be noted that one end (on the GND side) of the resonance conductor 2 is extended to the end of the fourth dielectric layer 1-4, and the GND electrode 1 is formed.
0 (see FIG. 3), but the other end (point P in FIG. 2) is a portion corresponding to point P in FIG. 7A, and capacitors C 2 , C
3 (discrete component 4 in this example).

Therefore, the second and third dielectric layers 1-2,
Through-hole electrodes 5 are formed on 1-3, and capacitors C 2 , C 3 on the first dielectric layer 1-1 and P of the resonance conductor 2 are formed by using these through-hole electrodes 5 as relay points. A blind through hole (a through hole whose inside is filled with a conductor) is connected between the points.

As described above, the GND pattern 3-2 is provided below the resonance conductor 2 via the dielectric layer, and the resonance conductor 2 is formed.
A microstrip resonator is formed by providing only the dielectric layer without providing the GND pattern on the upper side of the.

The resonator is arranged in the peripheral portion (including the lower side) of the transistor Tr 1 of the oscillator. That is, the oscillating portion is arranged in the peripheral portion of the transistor Tr 1 ,
The buffer portion is arranged in the peripheral portion of the transistor Tr 2 , and both are separately mounted.

In this way, the oscillator, particularly the microstrip resonator, is less likely to be affected by the outside. (Explanation of Second Embodiment) FIG. 4 shows the VC in the second embodiment.
It is sectional drawing of O module. In the figure, the same symbols as those in FIGS. 1 to 3 indicate the same components. Further, 1-1L to 1-3L and 1-6L and 1-7L are low dielectric layers (dielectric layers having a low dielectric constant), 1-5H and 1-6H are high dielectric layers (dielectric having a high dielectric constant). Body layer).

In the second embodiment, the resonance conductor 2 of the microstrip resonator is provided with high dielectric layers 1-4H and 1H from both sides thereof.
This is an example in which the wavelength is shortened by sandwiching the resonator with −5H to obtain a high Q resonator, and other configurations are shown in FIGS.
This is the same as the first embodiment shown in FIG.

As shown in FIG. 4, the resonance conductor 2 constituting the microstrip resonator is composed of high dielectric layers 1-4H,
It is formed so as to be sandwiched between 1-5H. Further, the low dielectric layer 1-1L is provided above the high dielectric layers 1-4H and 1-5H.
To 1-3L, and low dielectric layers 1-6L, 1-
7L is provided, and these low dielectric layers are patterned in the same manner as in the first embodiment.

That is, the structure on the low dielectric layers 1-1L to 1-3L is the same as the structure (patterning shape, etc.) on the first to third dielectric layers 1-1 to 1-3 in FIG. The configuration on the low dielectric layer 1-7L is the same as the configuration on the fifth dielectric layer 1-5 in FIG. In this example, the low dielectric layer 1-
No patterning is done on 6L.

(Third Embodiment) FIGS. 5 and 6 are views showing a third embodiment, FIG. 5 is an exploded perspective view of a VCO module, and FIG. 6 is a sectional view taken along the line ST of FIG. . In the figure,
The same symbols as those in FIG. 4 indicate the same components. Further, 11 is a GND pattern for trimming, 12 is a wiring pattern for relay, and 13 is a blind through hole.

The third embodiment is an example in which a GND pattern 11 for trimming is formed on the surface of a multi-layer substrate so that the microstrip resonator can be adjusted. Although transistors and the like are omitted in FIGS. 5 and 6,
The configuration other than the GND pattern 11 for trimming is almost the same as that of the first embodiment shown in FIGS.

As shown in FIGS. 5 and 6, the GND pattern 11 for trimming is provided on the first dielectric layer 1-1, and this position is at the point P side of the resonance conductor 2 ( G
It is on the side opposite to the ND side and above the position (corresponding to point P in FIG. 7A). In this case, in the stacking direction of the multilayer substrate, the point P side of the resonance conductor 2 and the GND pattern 1 for trimming are used.
Patterning is performed so that 1 and 1 overlap.

Then, the GND pattern 3-1A formed on the third dielectric layer 1-3 and the trimming GN
The D pattern 11 is connected by a blind through hole 13 via a through hole electrode 5 formed on the second dielectric layer 1-2.

The point P side of the resonance conductor 2 formed on the fourth dielectric layer 1-4 is connected to the through-hole electrode 5 formed on the third dielectric layer 1-3 and the second dielectric. Through the wiring pattern 12 for relay formed on the layer 1-2, it is drawn out onto the first dielectric layer 1-1 by a blind through hole and connected to the capacitors C 2 and C 3 (see FIG. 7A).

In the VCO module having such a configuration, in order to adjust the microstrip resonator, a part of the GND pattern 11 for trimming may be trimmed. In this case, the resonance conductor 2 and the GND for trimming
Since there is a capacitance component between the pattern 11 and the GND pattern 11 for trimming, the capacitance component is changed, and as a result, the resonance frequency of the microstrip resonator can be adjusted.

(Other Embodiments) The embodiments have been described above, but the present invention can be implemented as follows. (1) Not limited to VCO, it can be applied to other oscillators.

(2) Of the resistors, coils, capacitors, etc. that compose the oscillator, it is possible to configure any element with a thick film pattern. (3) In the embodiment, G is provided in the upper facing portion of the resonance conductor.
Although the ND pattern is not arranged at all, the present invention does not exclude a case where a part of the GND pattern slightly touches the resonance conductor due to the pattern accuracy deviation in the pattern design or the manufacturing method.

[0056]

As described above, the present invention has the following effects. (1) Since there is no GND pattern on the upper side of the resonant conductor and a dielectric layer is provided, the C component can be reduced.

[0057] As a result, since the line impedance can be increased, Ru can increase the Q of the resonator. (2) Since the dielectric layers are provided in the vertical direction (both sides) of the resonant conductor, the wavelength of λ / √ε r can be expected to be shortened, and the series resistance component (r s ) of the resonant conductor can be reduced, so that Q can be increased. Therefore, a small size and high Q oscillator module can be obtained.

(3) Triplate type stripline resonance
The C component can be set smaller even when the dielectric layer of the substrate is made thinner than in the case of using a heater , so that the Q of the transmission line does not have to be lowered.

(4) Since the substrate can be thinned, it is possible to shorten the steps such as debindering and the like during firing of the substrate and the sintering step, and the manufacturing cost of the substrate can be reduced. (5) Even if the resonance conductor is set inside the multilayer substrate, the resonance frequency can be easily adjusted.

[Brief description of drawings]

FIG. 1 is a principle diagram of the present invention.

FIG. 2 is an exploded perspective view of the VCO module according to the first embodiment of the present invention.

FIG. 3 is a sectional view taken along line XY of FIG.

FIG. 4 is a sectional view of a VCO module according to a second embodiment.

FIG. 5 is an exploded perspective view of a VCO module according to a third embodiment.

FIG. 6 is a sectional view taken along line ST of FIG.

FIG. 7 is an explanatory diagram of a conventional example.

FIG. 8 is an example of a conventional VCO module.

[Explanation of symbols]

1-1 to 1-3 First to third dielectric layers 2 resonance conductor 3-1A, 3-2 GND pattern 11 GND pattern for trimming 13 Blind through hole

   ─────────────────────────────────────────────────── ─── Continued front page       (56) References JP-A-63-209305 (JP, A)                 JP-A-51-112249 (JP, A)                 JP 63-59103 (JP, A)                 JP-A-2-290307 (JP, A)                 JP-A-2-298108 (JP, A)                 JP-A-3-10502 (JP, A)

Claims (2)

(57) [Claims]
1. A strip resonator comprising a strip line, and at least a resonance conductor (2) of the strip resonator.
In the multilayer board, wherein the dielectric layer (1-) is provided on one side (lower side) of the resonance conductor (2) with respect to the stacking direction of the multilayer board.
3) via the GND pattern (3-2) and the other side (upper side) of the resonance conductor (2) facing the resonance conductor is not set with the GND pattern, and the dielectric layer (1- 1,1-2) provided with a, the oscillator, the strip resonator and oscillation transistor
An oscillation section including data a (Tr 1), constituted by the buffer unit, the oscillation transistor (Tr 1), the buffer unit
It is mounted separately and stripped around the oscillation transistor (Tr 1 ).
An oscillator module characterized in that a resonance conductor (2) of a resonator is set .
2. A position of a part of the surface of the multilayer substrate, which partly overlaps with the resonance conductor (2) in the stacking direction.
Set the GND pattern (11) for trimming to and trim the GND pattern (11) for trimming.
So that the strip resonator can be adjusted.
Oscillator module according to claim 1, characterized in that.
JP29444691A 1991-11-11 1991-11-11 Oscillator module Expired - Fee Related JP3402369B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP29444691A JP3402369B2 (en) 1991-11-11 1991-11-11 Oscillator module

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JP29444691A JP3402369B2 (en) 1991-11-11 1991-11-11 Oscillator module
DE1991622748 DE69122748T2 (en) 1990-12-26 1991-12-25 High frequency device
US08/225,341 US5406235A (en) 1990-12-26 1991-12-25 High frequency device
EP92901922A EP0519085B1 (en) 1990-12-26 1991-12-25 High-frequency device
PCT/JP1991/001761 WO1992012548A1 (en) 1990-12-26 1991-12-25 High-frequency device

Publications (2)

Publication Number Publication Date
JPH05136612A JPH05136612A (en) 1993-06-01
JP3402369B2 true JP3402369B2 (en) 2003-05-06

Family

ID=17807886

Family Applications (1)

Application Number Title Priority Date Filing Date
JP29444691A Expired - Fee Related JP3402369B2 (en) 1991-11-11 1991-11-11 Oscillator module

Country Status (1)

Country Link
JP (1) JP3402369B2 (en)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0590612B1 (en) * 1992-09-29 1998-08-26 Matsushita Electric Industrial Co., Ltd. Frequency tunable resonator including a varactor
JP3492225B2 (en) 1999-01-19 2004-02-03 松下電器産業株式会社 Transceiver
JP4451119B2 (en) 2003-11-26 2010-04-14 アルプス電気株式会社 Voltage controlled oscillator
JP2009076608A (en) * 2007-09-19 2009-04-09 Mitsubishi Materials Corp Thin film thermistor and manufacturing method of thin film thermistor
JP6107063B2 (en) * 2012-11-07 2017-04-05 住友電気工業株式会社 Semiconductor device and manufacturing method thereof

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