JP3341492B2 - Group III nitride semiconductor light emitting device - Google Patents

Group III nitride semiconductor light emitting device

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Publication number
JP3341492B2
JP3341492B2 JP24884094A JP24884094A JP3341492B2 JP 3341492 B2 JP3341492 B2 JP 3341492B2 JP 24884094 A JP24884094 A JP 24884094A JP 24884094 A JP24884094 A JP 24884094A JP 3341492 B2 JP3341492 B2 JP 3341492B2
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Prior art keywords
light emitting
layer
light
concentration
cm
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JP24884094A
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Japanese (ja)
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JPH0888408A (en
Inventor
道成 佐々
典克 小出
正好 小池
勝英 真部
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豊田合成株式会社
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Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a light emitting device using a group III nitride semiconductor.

Conventionally, AlGaIn has been used as a blue light emitting diode.
A device using an N-based compound semiconductor is known. The compound semiconductor has attracted attention because of its direct transition type, which has high luminous efficiency, and that one of the three primary colors of light, blue, is used as the luminescent color.

Recently, it has been revealed that an AlGaInN-based semiconductor can be made p-type by doping with Mg and irradiating an electron beam or by heat treatment. As a result, instead of the conventional MIS type in which an n-layer and a semi-insulating layer (i-layer) are joined, AlGaN
There has been proposed a light emitting diode having a double hetero pn junction using a p-layer, a Zn-doped InGaN light-emitting layer, and an AlGaN n-layer.

[0004]

The above-mentioned double hetero p
The light emitting layer of an n-junction type light emitting diode
Since only Zn is doped, the light emitting layer is semi-insulating. Electrons are injected into the light-emitting layer from the n-layer by holes from the p-layer, and light is emitted by recombination of the injected electrons and holes.

As a result of repeated experiments, the present inventor measured emission colors by changing the amounts of donor impurities and acceptor impurities added to the light emitting layer. As a result, it was observed that the emission color of the light emitting layer changed depending on the donor impurity concentration and the acceptor impurity concentration.

The present invention has been made based on the above observation facts, and has as its object to emit three primary colors of light from the same substrate using a GaN-based compound semiconductor.

[0007]

According to the first aspect of the present invention, there is provided a group III nitride semiconductor (Al x Ga Y In 1-XY N; X = 0, Y = 0, X = Y = 0).
), An n-type layer having n-type conductivity, a p-type layer having p-type conductivity, and a light-emitting layer interposed therebetween have a structure in which a semiconductor having a narrow band gap is sandwiched between semiconductors having a wide band gap. In a light-emitting element in which a light-emitting portion having a three-layer structure formed by a heterojunction is repeatedly laminated on the same substrate as one unit, each light-emitting layer of each light-emitting portion has a group III nitride having the same composition.
The light emitting unit emits blue, red, and green three primary colors by appropriately setting the concentration of the acceptor impurity and / or the donor impurity in each light emitting layer of each light emitting unit. Yes, the donor impurity is silicon (Si) and the acceptor impurity is zinc (Zn).

[0008]

[0009]

In the light emitting layer, the concentrations of silicon and zinc are
In the case of 1 × 10 19 / cm 3 or less, blue light emission is possible, and the concentration of syringe and zinc is 1 × 10 19 to 1 × 10 21 / cm 3
In the case of green light emission is possible, only zinc concentration 1
When added in the range of × 10 19 to 1 × 10 21 / cm 3 , red light emission is possible.

[0011]

As described above, the light emitting portions are formed in multiple layers on the same substrate, and the group III nitrides having the same composition of the light emitting portions are formed.
In the light-emitting layer made of nitride semiconductor, it is possible from the light emitting portion by appropriately setting the concentration of the donor impurity and an acceptor impurity, to obtain blue, green, three primary colors of red light. In this manner, a planar light emitting device that can emit three primary colors of light using the same substrate can be configured.

[0012]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS First Embodiment Referring to FIG. 1, a planar light emitting device 100 has a sapphire substrate 1 on which 500.degree.
An N 2 buffer layer 2 is formed. The buffer layer 2
On the top, in order, a film thickness of about 2.0 μm and an electron concentration of 2 × 10 18 / c
n layer 11 made of m 3 silicon-doped GaN;
5 μm, a light emitting layer 12 of In 0.08 Ga 0.92 N doped with zinc (Zn) at a concentration of 1 × 10 18 / cm 3 and silicon at a concentration of 1 × 10 18 / cm 3 , a film thickness of about 1.0 μm, a hole Concentration 2 × 10 17 / cm 3
A p-layer 13 made of magnesium-doped GaN is formed. The three layers 11, 12, and 13 form the first light emitting unit A.

Next, on the first light-emitting portion A, in order,
2.0 μm, silicon-doped Ga with an electron concentration of 2 × 10 18 / cm 3
N layer 21 composed of N, thickness about 0.5 μm, zinc (Zn) concentration
5 × 10 19 / cm 3 , a light emitting layer 22 of In 0.08 Ga 0.92 N doped with silicon (Si) at a concentration of 5 × 10 19 / cm 3
A p-layer 23 made of magnesium-doped GaN having a hole concentration of 2 × 10 17 / cm 3 and a thickness of 1.0 μm is formed. The three layers 21, 22, and 23 form the second light emitting unit B.

Next, on the second light emitting section B, in order,
2.0 μm, silicon-doped Ga with an electron concentration of 2 × 10 18 / cm 3
N layer 31 composed of N, thickness about 0.5 μm, zinc (Zn) concentration
A light-emitting layer 32 of In 0.08 Ga 0.92 N doped at 5 × 10 19 / cm 3 and a p-layer 33 of magnesium-doped GaN having a thickness of about 1.0 μm and a hole concentration of 2 × 10 17 / cm 3 are formed. ing. The three layers 31, 32, and 33 form a third light emitting unit C.

In the first light emitting section A, the n-layer 11
An electrode 81 made of nickel and joined to the p-layer 13 is formed. In the second light emitting portion B, an electrode 82 made of nickel and joined to the n layer 21 and an electrode 72 made of nickel and joined to the p layer 23 are formed. Also, the third
In the light emitting section C, an electrode 83 made of nickel and joined to the n layer 31 and an electrode 73 made of nickel and joined to the p layer 33 are formed. The element separation grooves 61, 62, 63, and 64 for separating the light emitting portions, the electrode separation grooves 91 and 92 for separating the electrodes in the light emitting portions, and the like.
93 are formed.

Next, a method of manufacturing the planar light emitting device 100 having this structure will be described. The planar light emitting device 100 includes:
It was manufactured by vapor phase growth by an organometallic compound vapor phase growth method (hereinafter referred to as “M0VPE”). The gas used was NH
3 and the carrier gas H 2 or N 2 and trimethyl gallium (Ga (CH
3 ) 3 ) (hereinafter referred to as "TMG") and trimethylaluminum
(Al (CH 3 ) 3 ) (hereinafter referred to as “TMA”), trimethylindium (In (CH 3 ) 3 ) (hereinafter referred to as “TMI”) and silane (SiH 4 )
And diethylzinc (hereinafter referred to as "DEZ").

First, a single-crystal sapphire substrate 1 having an a-plane as a main surface, which has been washed by organic washing and heat treatment, is mounted on a susceptor placed in a reaction chamber of an MOVPE apparatus. Next, while flowing H 2 at normal pressure into the reaction chamber at a flow rate of 2 liter / min, the temperature was 1100
The sapphire substrate 1 was subjected to gas-phase etching at a temperature of ℃.

Next, by lowering the temperature to 400 ° C., and H 2
20 liter / min, NH 3 10 liter / min, TMA 1.8 × 10 -5
Supplying at mol / min, an AlN buffer layer 2 was formed to a thickness of about 500 °. Next, the temperature of the sapphire substrate 1 was set to 1150
° C, N 2 or H 2 10 liter / min, NH 3 10 liter
/ Min, 1.12 × 10 −4 mol / min of TMG and silane were introduced to form an n-layer 11 made of silicon-doped GaN having a thickness of about 2.0 μm and a concentration of 2 × 10 18 / cm 3 .

Subsequently, the temperature was maintained at 850 ° C. and N 2 or H 2
20 liter / min, NH 3 10 liter / min, TMG 1.53 × 10
-4 mol / min , TMI is 0.02 × 10 -4 mol / min, and DEZ is
2 × 10 −7 mol / min and 1 × 10 −8 mol / min of silane were introduced,
About 0.5 μm thick zinc (Zn) and silicon (Si) doped In
The light emitting layer 12 made of 0.08 Ga 0.92 N was formed. The concentration of zinc (Zn) in the light emitting layer 12 is 1 × 10 18 / cm 3 and the concentration of silicon (Si) is 1 × 10 18 / cm 3 .

Subsequently, the temperature is maintained at 850 ° C. and N 2 or H 2
20 liter / min, NH 3 10 liter / min, TMG 1.12 × 10
-4 mol / min, and 2 × 10 -4 mol / min of CP 2 Mg,
A p-layer 13 made of magnesium (Mg) -doped GaN having a thickness of about 1.0 μm was formed. The concentration of magnesium in p layer 13 is 1 × 10 20 / cm 3 . In this state, the p-layer 13 is still an insulator having a resistivity of 10 8 Ωcm or more.

Next, the temperature of the sapphire substrate 1 is maintained at 850 ° C., N 2 or H 2 is 10 liter / min, and NH 3 is 10 liter / min.
Then, TMG was introduced at 1.12 × 10 −4 mol / min and silane was introduced to form an n-layer 21 made of silicon-doped GaN having a thickness of about 2.0 μm and a concentration of 2 × 10 18 / cm 3 .

Subsequently, the temperature is maintained at 850 ° C. and N 2 or H 2
20 liter / min, NH 3 10 liter / min, TMG 1.53 × 10
-4 mol / min, TMI 0.02 × 10 -4 mol / min, and DEZ
1 × 10 -5 mol / min and silane 5 × 10 -7 mol / min are introduced,
About 0.5 μm thick zinc (Zn) and silicon (Si) doped In
The light emitting layer 22 made of 0.08 Ga 0.92 N was formed. The concentration of zinc (Zn) in the light emitting layer 22 is 5 × 10 19 / cm 3 and the concentration of silicon (Si) is 5 × 10 19 / cm 3 .

Subsequently, the temperature is maintained at 850 ° C. and N 2 or H 2
20 liter / min, NH 3 10 liter / min, TMG 1.12 × 10
-4 mol / min, and 2 × 10 -4 mol / min of CP 2 Mg,
A p-layer 23 made of GaN doped with magnesium (Mg) and having a thickness of about 1.0 μm was formed. The concentration of magnesium in p layer 23 is 1 × 10 20 / cm 3 . In this state, the p-layer 13 is still an insulator having a resistivity of 10 8 Ωcm or more.

Next, the temperature was maintained at 850 ° C. and N 2 or H 2 was added.
10 liter / min, NH 3 10 liter / min, TMG 1.12 × 10 -4
Mol / min, and introducing silane, a film thickness of about 2.0 .mu.m, the concentration 2 × 10 18 / cm 3 n layer 3 made of GaN of silicon doped
1 was formed.

Subsequently, the temperature was maintained at 850 ° C. and N 2 or H 2
20 liter / min, NH 3 10 liter / min, TMG 1.53 × 10
-4 mol / min , TMI is 0.02 × 10 -4 mol / min, and DEZ is
A light emitting layer 32 of zinc (Zn) -doped In 0.08 Ga 0.92 N having a thickness of about 0.5 μm was formed at a rate of 1 × 10 −5 mol / min.
The concentration of zinc (Zn) in the light emitting layer 32 is 5 × 10 19 / cm 3
It is.

Subsequently, the temperature was maintained at 850 ° C. and N 2 or H 2
20 liter / min, NH 3 10 liter / min, TMG 1.12 × 10
-4 mol / min, and 2 × 10 -4 mol / min of CP 2 Mg,
A p-layer 33 made of GaN doped with magnesium (Mg) and having a thickness of about 1.0 μm was formed. The magnesium concentration of the p layer 33 is 1 × 10 20 / cm 3 . In this state, the p-layer 33 is still an insulator having a resistivity of 10 8 Ωcm or more.

Next, the substrate 1 having the multilayer structure is heated to a temperature of 900 ° C.
By heat treatment at 5 ° C. for 5 minutes, the p-layers 13, 23, and 33 were converted to p-conductivity type with a hole concentration of 2 × 10 17 / cm 3 and a resistivity of 2 Ωcm.

[0028] Next, the SiO 2 film, using a photoresist film by photolithography, to form a SiO 2 film having a predetermined pattern, the film as a mask, a groove 61~64,91
To 93, the electrodes 81 to 83, and the electrodes 71 to 72 were formed with respective grooves. This groove was formed by etching after forming a mask of a predetermined pattern by photolithography for each groove having the same depth. And the electrodes 81 to
83, electrodes 71 to 72 were formed as shown in FIG. 1 by uniformly depositing nickel, forming a mask by photolithography, and then etching.

In the planar light emitting device thus formed, the electrodes 71, 72, 73 are set to have a positive potential with respect to the electrodes 81, 82, 83, so that the light emitting portion A emits blue light and the light emitting portion B emits green light. Light emission and red emission were obtained in the light emitting section C. FIG. 1 shows the structure of one pixel of the planar light emitting device 100. In an actual configuration, this pixel structure is repeated in a lattice shape. Thus, a full-color planar light emitting device is obtained.

The planar light emitting device 200 of the second embodiment the second embodiment has a configuration shown in FIG. The first light-emitting portion A including the n-layer 11, the light-emitting layer 12, and the p-layer 13 and the third light-emitting portion C including the n-layer 31, the light-emitting layer 32, and the p-layer 33 are the flat light-emitting elements in the first embodiment. 10
The first light emitting unit A and the third light emitting unit C of 0 are exactly the same. The second light emitting portion B of the planar light emitting device 200 of the second embodiment
The p layer 13 and the light emitting layer 22 of the light emitting unit A and the n of the third light emitting unit C
And a layer 31. That is, p of the second light emitting portion B
The first and third light emitting units A,
C, the p layer of the second light emitting unit B is shared with the p layer of the first light emitting unit A, and the n layer of the second light emitting unit B is shared with the n layer of the third light emitting unit C. I have.

The element separation grooves 61 to 64 are formed at a depth at which the light emitting portions A, B, and C are separated from each other. In addition, the inter-electrode separation grooves 91 to 93 are formed at a depth at which the electrodes of each light emitting unit are separated.

In the first and second embodiments, the light-emitting layers 12, 22, and 32 contain magnesium, and are heat-treated after the formation of each layer to form the p-layers 13, 23,
Like p. 33, a p-type may be used.

As shown in FIG. 3, the n-layer 11, the p-layer 1
3, etching is performed stepwise so that the surfaces of the n-layer 21, the p-layer 23, and the n-layer 31 are exposed, and the electrode 8 is formed on the exposed surface of each layer.
1, 71, 82, 72 and 83 may be formed. However,
Element isolation grooves 91 and 92 are required. The depth of the groove is p
It is formed to a depth that can be separated from an element that cannot be separated by an n-junction.

In the structure shown in FIG. 2, when each layer is exposed, the electrodes 81, 71, 72, 73 can be formed on each exposed layer as shown in FIG.
The electrodes 81 and 71 are electrodes for the first light emitting unit A, and the electrodes 72 and 73 are electrodes for the third light emitting unit C. or,
The electrodes for the second light emitting unit B are the electrodes 72 and 71. That is, in the configuration of FIG. 4, the electrode of the second light emitting unit B is shared with the electrode 71 of the first light emitting unit A and the electrode 72 of the third light emitting unit C.

In the above embodiment, it is desirable that the silicon concentration of the light emitting layer 12 of the first light emitting portion A emitting blue light is 1 × 10 19 / cm 3 or less, and the zinc concentration is 1 × 10 19 / cm 3 or less. Green emission second
The silicon concentration of the light emitting layer 22 of the light emitting part B is 1 × 10 19 to 1 ×
The range of 10 21 / cm 3 and the zinc concentration are preferably in the range of 1 × 10 19 to 1 × 10 21 / cm 3 . Further, the third light emitting portion C for emitting red light contains only zinc, and its concentration is preferably in the range of 1 × 10 19 to 1 × 10 21 / cm 3 .

In the above embodiment, the emission colors of blue, green and red are generated by changing the acceptor concentration and the donor concentration in the light emitting layer, but the composition ratio in the light emitting layer In x Ga 1 -X N By changing X like 0.08, 0.15, 0.30,
Blue, green, and red emission colors may be obtained. further,
Each layer is composed of Al x Ga Y In 1-XY N (including X = 0, Y = 0, X = Y = 0), and the crystal ratio is such that the light emitting layer has a smaller band gap than the layers on both sides. In addition, light of three primary colors of blue, green and red may be obtained.

[Brief description of the drawings]

FIG. 1 is a cross-sectional view illustrating a structure of a surface emitting device according to a first embodiment of the present invention.

FIG. 2 is a cross-sectional view illustrating a structure of a surface emitting device according to a second specific example of the present invention.

FIG. 3 is a cross-sectional view illustrating a structure of a surface emitting device according to another embodiment of the present invention.

FIG. 4 is a cross-sectional view illustrating a structure of a surface emitting device according to another embodiment of the present invention.

[Explanation of symbols]

 100, 200: Surface-emitting element 1: Sapphire substrate 2: Buffer layer 11, 21, 31: n-layer 12, 22, 32: Light-emitting layer 13, 23, 33: p-layer 61-64: Inter-element separation groove 91-93 ... Separation groove between electrodes

────────────────────────────────────────────────── ─── Continuation of front page (72) Inventor Katsuhide Shinbe 1 Ochiai Nagahata, Kasuga-cho, Nishikasugai-gun, Aichi Prefecture Inside Toyoda Gosei Co., Ltd. (56) References JP-A-6-1511963 (JP, A) JP-A-4-321280 (JP, A) JP-A-60-202971 (JP, A) JP-A-5-190903 (JP, A) JP-A-6-53549 (JP, A) JP-A-7-183576 (JP , A) Japanese Utility Model 60-111054 (JP, U) (58) Fields investigated (Int. Cl. 7 , DB name) H01L 33/00

Claims (3)

(57) [Claims]
1. A group III nitride semiconductor (Al x Ga Y In 1-XY N; X = 0,
Y = 0, X = Y = 0), and an n layer showing an n conductivity type;
A light emitting portion having a three-layer structure in which a p-type layer having p-type conductivity and a light emitting layer interposed therebetween are formed by a double heterojunction having a structure in which a narrow band gap semiconductor is sandwiched between wide band gap semiconductors is defined as one unit. In the light emitting element repeatedly laminated on the same substrate, each light emitting layer of each light emitting portion is made of a group III nitride half having the same composition.
Consists conductor, by the proper setting the concentration of the acceptor impurity and / or donor impurities in the light-emitting layer of each light-emitting section, the light-emitting portions, respectively, blue, red, green 3
A light emitting device for emitting primary colors, wherein the donor impurity is silicon (Si) and the acceptor impurity is zinc (Zn).
2. Each of the light emitting layers includes a blue light emitting layer having a concentration of silicon and zinc of 1 × 10 19 / cm 3 or less, and a concentration of silicon and zinc of 1 × 10 19 to 1 × 10 21 / cm 3. A green light-emitting layer,
2. The light emitting device according to claim 1 , wherein the light emitting device is a red light emitting layer to which only zinc is added in a concentration range of 1 × 10 19 to 1 × 10 21 / cm 3 .
3. The light emitting device according to claim 1, wherein the light emitting layer is p-type.
JP24884094A 1994-09-16 1994-09-16 Group III nitride semiconductor light emitting device Expired - Fee Related JP3341492B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP24884094A JP3341492B2 (en) 1994-09-16 1994-09-16 Group III nitride semiconductor light emitting device

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP24884094A JP3341492B2 (en) 1994-09-16 1994-09-16 Group III nitride semiconductor light emitting device
US08/522,110 US5650641A (en) 1994-09-01 1995-08-31 Semiconductor device having group III nitride compound and enabling control of emission color, and flat display comprising such device

Publications (2)

Publication Number Publication Date
JPH0888408A JPH0888408A (en) 1996-04-02
JP3341492B2 true JP3341492B2 (en) 2002-11-05

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Family Applications (1)

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Country Status (1)

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WO2001024282A1 (en) * 1999-09-30 2001-04-05 Aixtron Ag Method for forming p-type semiconductor crystalline layer of iii-group element nitride
JP2003243700A (en) 2002-02-12 2003-08-29 Toyoda Gosei Co Ltd Iii nitride based compound semiconductor light emitting element
US7576365B2 (en) 2004-03-12 2009-08-18 Showa Denko K.K. Group III nitride semiconductor light-emitting device, forming method thereof, lamp and light source using same
JP4756010B2 (en) * 2007-06-18 2011-08-24 株式会社東芝 Light emitting device
JP2012089678A (en) * 2010-10-19 2012-05-10 Showa Denko Kk Group iii nitride semiconductor device and multi-wavelength light emitting group iii nitride semiconductor layer
CN109768135A (en) * 2018-12-27 2019-05-17 武汉大学 Panchromatic stacking-type upside-down mounting RGB Micro-LED chip array and preparation method thereof

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EP3453050A4 (en) * 2016-05-04 2020-01-01 Glo Ab Monolithic multicolor direct view display containing different color leds and method of making thereof

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