JP3336441B2

JP3336441B2 - Exposure method and apparatus, and device manufacturing method using the method

Info

Publication number: JP3336441B2
Application number: JP31483892A
Authority: JP
Inventors: 健爾西
Original assignee: Nikon Corp
Current assignee: Nikon Corp
Priority date: 1992-11-25
Filing date: 1992-11-25
Publication date: 2002-10-21
Anticipated expiration: 2017-10-21
Also published as: JPH06163353A

Description

DETAILED DESCRIPTION OF THE INVENTION

【０００１】[0001]

【産業上の利用分野】本発明は、例えば所謂スリットス
キャン露光方式でレチクルのパターンの像をウエハ上に
露光する投影露光装置に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a projection exposure apparatus for exposing a reticle pattern image onto a wafer by, for example, a so-called slit scan exposure method.

【０００２】[0002]

【従来の技術】半導体素子又は液晶表示素子等をリソグ
ラフィ工程で製造する際に、露光光のもとでフォトマス
ク又はレチクル（以下「レチクル」と総称する）のパタ
ーン像を投影光学系を介して感光基板上に投影する投影
露光装置が使用されている。斯かる投影露光装置におい
ては、レチクル上のより大きいチップパターンの像を感
光基板上に露光する大フィールド化に対する要求が高ま
っている。大フィールド化に対する要求に応えるために
は、レチクル及び感光基板を例えばスリット状又は円弧
状の照明領域に対して同期して走査する所謂スリットス
キャン露光方式が有効である。これにより、レチクル上
のその照明領域よりも広いパターンの像を感光基板上に
露光することができる。2. Description of the Related Art When a semiconductor device or a liquid crystal display device is manufactured by a lithography process, a pattern image of a photomask or a reticle (hereinafter, collectively referred to as a "reticle") is exposed through a projection optical system under exposure light. 2. Description of the Related Art A projection exposure apparatus that projects an image on a photosensitive substrate is used. In such a projection exposure apparatus, there is an increasing demand for a larger field for exposing an image of a larger chip pattern on a reticle onto a photosensitive substrate. In order to respond to the demand for a large field, a so-called slit scan exposure method in which a reticle and a photosensitive substrate are scanned in synchronization with, for example, a slit-shaped or arc-shaped illumination area is effective. Thus, an image of a pattern wider than the illumination area on the reticle can be exposed on the photosensitive substrate.

【０００３】図４は従来のスリットスキャン露光方式の
投影露光装置を示し、この図４において、ベース１上に
防振ばね２Ａ及び２Ｂを介してインバー（低膨張率の合
金）よりなる第１コラム３が載置されている。第１コラ
ム３の内部にはＹステージ４及びＸステージ５が載置さ
れ、Ｘステージ５上に感光基板としてのウエハ６が保持
されている。また、第１コラム３の上部に鏡筒７が固定
され、鏡筒７の内部に投影光学系ＰＬが収納されてい
る。Ｙステージ４は、投影光学系ＰＬの光軸に垂直な面
（水平面）内で図４の紙面に垂直な方向にウエハ６の位
置決めを行い、Ｘステージ５は、水平面内でＹ軸に垂直
なＸ方向にウエハ６の位置決めを行う。なお、図示省略
するも、Ｘステージ５とウエハ６との間には、ウエハ６
を投影光学系ＰＬの光軸方向であるＺ方向に位置決めす
るＺステージ等も介装されている。FIG. 4 shows a projection exposure apparatus of a conventional slit scan exposure system. In FIG. 4, a first column made of invar (an alloy having a low expansion coefficient) is provided on a base 1 via vibration isolating springs 2A and 2B. 3 is placed. A Y stage 4 and an X stage 5 are mounted inside the first column 3, and a wafer 6 as a photosensitive substrate is held on the X stage 5. The lens barrel 7 is fixed to the upper part of the first column 3, and the projection optical system PL is housed inside the lens barrel 7. The Y stage 4 positions the wafer 6 in a direction perpendicular to the plane of FIG. 4 in a plane (horizontal plane) perpendicular to the optical axis of the projection optical system PL, and the X stage 5 perpendicular to the Y axis in a horizontal plane. The wafer 6 is positioned in the X direction. Although not shown, the wafer 6 is located between the X stage 5 and the wafer 6.
A Z stage or the like for positioning the camera in the Z direction which is the optical axis direction of the projection optical system PL is also provided.

【０００４】第１コラム３上にインバーよりなる第２コ
ラム８が固定され、第２コラム８の上部にＸ方向に摺動
自在なレチクル走査ステージ９が載置され、レチクル走
査ステージ９上に転写用のパターンが形成されたレチク
ル１１が保持されている。レチクル１１上のパターンは
照明光学系１０から射出された露光光ＩＬに照明され、
レチクル１１上のパターン像が投影光学系ＰＬを介して
ウエハ６上に投影露光される。この場合、照明光学系１
０によるレチクル１１上の照明領域は、例えば矩形のス
リット状であり、その照明領域だけではレチクル１１上
の全パターン領域が照明されない。A second column 8 made of invar is fixed on the first column 3, and a reticle scanning stage 9 slidable in the X direction is mounted on the upper portion of the second column 8 and transferred onto the reticle scanning stage 9. The reticle 11 on which a pattern for use is formed is held. The pattern on the reticle 11 is illuminated with the exposure light IL emitted from the illumination optical system 10,
The pattern image on the reticle 11 is projected and exposed on the wafer 6 via the projection optical system PL. In this case, the illumination optical system 1
The illuminated area on the reticle 11 with 0 is, for example, a rectangular slit, and the entire illuminated pattern area on the reticle 11 is not illuminated.

【０００５】そこで、露光時にはレチクル走査ステージ
９を駆動することにより、その照明領域に対して、レチ
クル１１をその照明領域の長手方向に垂直な方向である
Ｘ方向に一定速度Ｖ１で走査する。これに同期して、Ｘ
ステージ５を駆動することにより、ウエハ６をその照明
領域内のレチクル像に対して−Ｘ方向に一定速度Ｖ２で
走査する。投影光学系ＰＬによるレチクル１１からウエ
ハ６への投影倍率をβとすると、速度Ｖ２はβ・Ｖ１で
ある。このようにして、レチクル１１及びウエハ５を同
期して走査することにより、レチクル１１の全パターン
の像がウエハ６上に投影露光される。その後、Ｙステー
ジ４及びＸステージ５を駆動することにより、ウエハ６
上の次の露光領域が投影光学系ＰＬの露光フィールド内
に移動する。[0005] Therefore, at the time of exposure, the reticle scanning stage 9 is driven to scan the reticle 11 at a constant speed V1 in the X direction, which is a direction perpendicular to the longitudinal direction of the illumination region, by driving the reticle scanning stage 9. In sync with this, X
By driving the stage 5, the wafer 6 scans the reticle image in the illumination area in the -X direction at a constant speed V2. Assuming that the projection magnification from the reticle 11 to the wafer 6 by the projection optical system PL is β, the speed V2 is β · V1. By scanning the reticle 11 and the wafer 5 in synchronization in this manner, images of all the patterns of the reticle 11 are projected and exposed on the wafer 6. Thereafter, by driving the Y stage 4 and the X stage 5, the wafer 6
The next upper exposure area moves into the exposure field of the projection optical system PL.

【０００６】この際に、レチクル走査ステージ９、Ｙス
テージ４及びＸステージ５の駆動により発生する振動は
第１コラム３及び第２コラム８により減衰される。ま
た、ベース１が設置されている床側からの振動は、防振
ばね２Ａ及び２Ｂにより吸収されて第１コラム３側には
ほとんど伝わらないようになっている。At this time, the vibration generated by driving the reticle scanning stage 9, the Y stage 4 and the X stage 5 is attenuated by the first column 3 and the second column 8. In addition, vibrations from the floor on which the base 1 is installed are absorbed by the vibration isolating springs 2A and 2B and are hardly transmitted to the first column 3 side.

【０００７】[0007]

【発明が解決しようとする課題】上記の如き従来の技術
に於いては、レチクル１１及びウエハ６をそれぞれ等速
度で走査する必要があり、ステージ静止状態から等速度
走査に達するまでの間、又は等速度走査からステージ静
止状態に達するまでの間は、Ｘステージ５及びレチクル
走査ステージ９に対してそれぞれを支持している第１コ
ラム３及び第２コラム８から所定の駆動力を与える必要
がある。In the prior art as described above, it is necessary to scan the reticle 11 and the wafer 6 at a constant speed, respectively. From the constant speed scanning until the stage reaches the stationary state, it is necessary to apply a predetermined driving force to the X stage 5 and the reticle scanning stage 9 from the first column 3 and the second column 8 that support them. .

【０００８】例えば図５（ａ）に示すように、レチクル
走査ステージ９及びＸステージ５のの質量をそれぞれＭ
１及びＭ２として、レチクル走査ステージ９及びＸステ
ージ５に与えた加速度をそれぞれｇ１及びｇ２とする
と、レチクル走査ステージ９及びＸステージ５に与えた
駆動力はそれぞれＭ１・ｇ１及びＭ２・ｇ２で表される
（簡単の為に摩擦による誤差は除く）。それらステージ
がそれぞれ一定の走査速度に達するまでそれら駆動力は
与えられ続ける。この過程で、その反作用によって対応
する第２コラム８及び第１コラム３にもそれぞれ反対方
向の力Ｆ１（＝−Ｍ１・ｇ１）及びＦ２（＝−Ｍ２・ｇ
２）が加えられることになり、第１コラム３及び第２コ
ラム８の全体が傾く虞があった。また、図５（ｂ）に示
すように、レチクル走査ステージ９に加速度ｇ３を与え
るために、第２コラム８に力Ｆ３が加わるような場合
に、第２コラム８の弱い部分８ａ及び８ｂが変形したり
する虞もあった。For example, as shown in FIG. 5A, the mass of the reticle scanning stage 9 and the mass of the X stage 5 are each M
Assuming that the accelerations applied to the reticle scanning stage 9 and the X stage 5 are g1 and g2, respectively, as 1 and M2, the driving forces applied to the reticle scanning stage 9 and the X stage 5 are represented by M1 · g1 and M2 · g2, respectively. (Excluding errors due to friction for simplicity). The driving force continues to be applied until each of the stages reaches a constant scanning speed. In this process, due to the reaction, the forces F1 (= −M1 · g1) and F2 (= −M2 · g) in the opposite directions are also applied to the corresponding second column 8 and first column 3, respectively.
2) is added, and the entire first column 3 and the second column 8 may be inclined. Further, as shown in FIG. 5B, when a force F3 is applied to the second column 8 to apply an acceleration g3 to the reticle scanning stage 9, the weak portions 8a and 8b of the second column 8 are deformed. There was also a risk of doing so.

【０００９】このように第１コラム３及び第２コラム８
の傾斜や第２コラム８の変形等が発生すると、レチクル
１１とウエハ６との相対的位置関係が変化して、レチク
ル１１上のパターンをウエハ６上の既に形成されている
回路パターン上に重ねて露光する際の重ね合わせ精度が
悪化するという不都合がある。また、これを防ぐ為に第
１コラム３及び第２コラム８を剛性の高い構造にする
と、それらコラムの設計が困難になると共に、それらコ
ラムが複雑化し且つ大型化するという不都合がある。更
に、各コラムの傾斜や変形による振動が外力となり、レ
チクル１１とウエハ６との位置制御性を劣化させるとい
う不都合もあった。Thus, the first column 3 and the second column 8
When the inclination of the reticle 11 and the deformation of the second column 8 occur, the relative positional relationship between the reticle 11 and the wafer 6 changes, and the pattern on the reticle 11 is superimposed on the already formed circuit pattern on the wafer 6. However, there is a disadvantage that the overlay accuracy at the time of exposure is deteriorated. In addition, if the first column 3 and the second column 8 are formed to have a high rigidity in order to prevent this, the design of the columns becomes difficult, and the columns become complicated and large. Further, there is also a disadvantage that vibrations caused by the inclination and deformation of each column become external forces and deteriorate the position controllability between the reticle 11 and the wafer 6.

【００１０】本発明は斯かる点に鑑み、ウエハ又はレチ
クルが載置されたステージを加速する際に、その駆動力
の反作用によりそのステージの支持部が逆方向の力を受
けた場合でも、その支持部の傾きや変形が生じないよう
な露光方法及び装置を提供することを目的とする。更に
本発明は、その露光方法を用いたデバイス製造方法を提
供することをも目的とする。 The present invention has been made in view of the above, and when accelerating a stage on which a wafer or a reticle is mounted, even if a supporting portion of the stage receives a force in the opposite direction due to a reaction of the driving force, the acceleration is not affected. An object of the present invention is to provide an exposure method and an exposure apparatus that do not cause tilting or deformation of a support portion. Further
The present invention provides a device manufacturing method using the exposure method.
The purpose is also to provide.

【００１１】[0011]

【課題を解決するための手段】上記課題を解決するため
に、一実施例を表す図面に対応させて説明すると、請求
項１記載の露光装置は、所定形状の照明領域内を照明す
る照明光学系（１０）と、マスク（１１）を保持してそ
の照明領域に対してマスク（１１）を相対的に走査する
マスク走査手段（９）と、マスク走査手段（９）が載置
されたマスクベース（１２Ｂ）と、その照明領域内のマ
スク（１１）上のパターンの像を感光基板（６）上に投
影する投影光学系（ＰＬ）と、感光基板（６）を保持し
てその照明領域の共役像に対して感光基板（６）を相対
的に走査する基板走査手段（５）と、基板走査手段
（５）が載置された基板ベース（１２Ａ）とを有し、そ
の照明領域に対して相対的にマスク（１１）及び感光基
板（６）を同期して走査することにより、その照明領域
よりも広いマスク（１１）上の領域のパターンの像を感
光基板（６）上に投影する露光装置であって、基板ベー
ス（１２Ａ）とは独立に配置された固定部材（１３）
に、基板ベース（１２Ａ）に対して付勢力を与える基板
ベース付勢手段（１５Ａ，１７Ａ）を設け、感光基板
（６）をその照明領域の共役像に対して相対走査する際
に基板ベース（１２Ａ）に与えられる力と逆方向で大き
さがほぼ等しい力を基板ベース付勢手段（１５Ａ，１７
Ａ）から基板ベース（１２Ａ）に与えるようにしたもの
である。[Means for Solving the Problems] In order to solve the above-mentioned problems
A description will be given below with reference to the drawings showing an embodiment.
Item 1. The exposure apparatus according to item 1, wherein the illumination optical system (10) illuminates an illumination area having a predetermined shape, and a mask that holds the mask (11) and scans the mask (11) relative to the illumination area. A scanning unit (9), a mask base (12B) on which the mask scanning unit (9) is mounted, and a projection for projecting an image of a pattern on the mask (11) in the illumination area onto the photosensitive substrate (6). An optical system (PL), a substrate scanning means (5) for holding the photosensitive substrate (6) and relatively scanning the photosensitive substrate (6) with respect to a conjugate image of the illumination area, and a substrate scanning means (5) And a substrate base (12A) on which the mask is mounted, and the mask (11) and the photosensitive substrate (6) are scanned synchronously with respect to the illumination area, so that the mask is wider than the illumination area. (11) Project the image of the pattern in the upper area onto the photosensitive substrate (6) A that exposure apparatus, substrate base (12A) fixing member disposed independently of the (13)
And a substrate base urging means (15A, 17A) for applying an urging force to the substrate base (12A). When the photosensitive substrate (6) is relatively scanned with respect to the conjugate image of the illumination area, the substrate base ( 12A) is applied to the substrate base biasing means (15A, 17
A) is applied to the substrate base (12A) from A).

【００１２】この場合、マスクベース（１２Ｂ）を基板
ベース（１２Ａ）上に載置し、固定部材（１４）にマス
クベース（１２Ｂ）に対して付勢力を与えるマスクベー
ス付勢手段（１９Ａ，２１Ａ）を設け、マスク（１１）
をその照明領域に対して相対走査する際にマスクベース
（１２Ｂ）に与えられる力と逆方向で大きさが等しい力
をマスクベース付勢手段（１９Ａ，２１Ａ）からマスク
ベース（１２Ｂ）に与えるようにすることが望ましい。In this case, the mask base (12B) is placed on the substrate base (12A), and the mask base urging means (19A, 21A) for urging the fixing member (14) against the mask base (12B). ), And a mask (11)
Is applied from the mask base urging means (19A, 21A) to the mask base (12B) in a direction opposite to the force applied to the mask base (12B) when the mask is scanned relative to the illumination area. Is desirable.

【００１３】また、基板ベース付勢手段（１５Ａ，１７
Ａ）及びマスクベース付勢手段（１９Ａ，２１Ａ）は、
それぞれ非接触で基板ベース（１２Ａ）及びマスクベー
ス（１２Ｂ）に不勢力を与えることが望ましい。非接触
の基板ベース付勢手段（１５Ａ，１７Ａ）及びマスクベ
ース付勢手段（１９Ａ，２１Ａ）の一例はリニアモ−タ
である。次に、請求項５記載の露光装置は、パターンを
有したマスク（１１）と基板（６）とを同期移動して、
パターンを基板（６）に走査露光する露光装置であっ
て、走査露光のためにマスク（１１）と基板（６）との
一方を保持して移動する第１ステージ（９または４，
５）と、第１ステージ（９または４，５）を移動可能に
支持する支持部材（１２Ａ，１２Ｂ）と、支持部材（１
２Ａ，１２Ｂ）に対して第１ステージ（９または４，
５）を移動するときの反作用に応じて支持部材（１２
Ａ，１２Ｂ）に力を付与する付与手段（１４〜２１）
と、を備えている。また、請求項１３記載の露光装置
は、パターンを有したマスク（１１）と基板（６）とを
同期移動して、マスク（１１）のパターンを基板（６）
に走査露光する露光装置であって、マスク（１１）を保
持して移動する第１ステージ（９）と、第１ステージ
（９）を移動可能に支持する支持部材（１２Ｂ）と、支
持部材（１２Ｂ）に対して第１ステージ（９）を移動す
るときの反作用に応じて支持部材（１２Ｂ）に力を付与
する付与手段（１４〜２１）と、を備えている。また、
請求項２２記載の露光装置は、パターンを有したマスク
（１１）と基板（６）とを同期移動して、パターンを基
板（６）に走査露光する露光装置であって、走査露光の
ためにマスク（１１）と基板（６）との一方を保持して
移動する第１ステージ（９または４，５）と、第１ステ
ージ（９または４，５）を移動可能に支持する支持部材
（１２Ａ，１２Ｂ）と、支持部材（１２Ａ，１２Ｂ）に
対して第１ステージ（９または４，５）を移動するとき
の反作用により支持部材（１２Ａ，１２Ｂ）に変動が生
じないようにする変動防止手段（１４〜２１）と、を備
えている。また、請求項２７記載の露光装置は、パター
ンを有したマスク（１１）と基板（６）とを同期移動し
て、マスク（１１）のパターンを基板（６）に走査露光
する露光装置であって、マスク（１１）を保持して移動
する第１ステージ（９）と、第１ステージ（９）を移動
可能に支持する支持部材（１２Ｂ）と、支持部材（１２
Ｂ）に対して第１ステージ（９）を移動するときの反作
用により支持部材（１２Ｂ）に変動が生じないようにす
る変動防止手段（１４〜２１）と、を備えている。次
に、請求項３５記載の露光方法は、パターンを有したマ
スク（１１）と基板（６）とを同期移動して、マスク
（１１）のパターンを基板（６）に走査露光する露光方
法であって、マスク（１１）を支持部材（１２Ｂ）に対
して移動するときの反作用に応じて支持部材（１２Ｂ）
に力を付与している。また、請求項３８記載の露光方法
は、パターンを有したマスク（１１）と基板（６）とを
同期移動して、パターンを基板（６）に走査露光する露
光方法であって、マスク（１１）と基板（６）との一方
を支持部材（１２Ａ，１２Ｂ）に対して移動するときの
反作用により支持部材（１２Ａ，１２Ｂ）に変動が生じ
ないようにしている。また、請求項４０記載の露光方法
は、パターンを有したマスク（１１）と基板（６）とを
同期移動して、マスク（１１）のパターンを基板（６）
に走査露光する露光方法であって、マスク（１１）を支
持部材（１２Ｂ）に対して移動するときの反作用により
支持部材（１２Ｂ）に変動が生じないようにしている。The substrate base urging means (15A, 17
A) and the mask base urging means (19A, 21A)
It is desirable to apply a force to the substrate base (12A) and the mask base (12B) in a non-contact manner. An example of the non-contact substrate base urging means (15A, 17A) and the mask base urging means (19A, 21A) is a linear motor. Next, the exposure apparatus according to claim 5 synchronously moves the mask (11) having a pattern and the substrate (6),
An exposure apparatus for scanning and exposing a pattern on a substrate (6), the first stage (9 or 4) moving and holding one of a mask (11) and a substrate (6) for scanning exposure.
5), a support member (12A, 12B) that movably supports the first stage (9 or 4, 5), and a support member (1).
2A, 12B) for the first stage (9 or 4,
5) in response to the reaction when moving the support member (12).
A, 12B) a means for applying a force (14 to 21)
And In the exposure apparatus according to the thirteenth aspect, a mask (11) having a pattern and a substrate (6) are formed.
Synchronously move the pattern of the mask (11) to the substrate (6)
An exposure apparatus for scanning exposure, a mask (11) a first stage that holds and moves (9), a support member for movably supporting the first stage (9) (12B), the support member ( 12B), and applying means (14 to 21) for applying a force to the support member (12B) in response to a reaction when the first stage (9) is moved with respect to 12B). Also,
An exposure apparatus according to claim 22, wherein the mask (11) having the pattern and the substrate (6) are synchronously moved to scan and expose the pattern to the substrate (6). A first stage (9 or 4, 5) that moves while holding one of the mask (11) and the substrate (6), and a support member (12A) that movably supports the first stage (9 or 4, 5). , 12B) and a fluctuation preventing means for preventing fluctuations in the support members (12A, 12B) due to a reaction when the first stage (9 or 4, 5) is moved with respect to the support members (12A, 12B). (14 to 21). The exposure apparatus according to claim 27 wherein the putter
The mask (11) having the mask and the substrate (6) are moved synchronously.
Te, a pattern of the mask (11) there is provided an exposure apparatus that scans and exposes the substrate (6), movable between the mask (11) a first stage that holds and moves (9), the first stage (9) A support member (12B) for supporting the support member (12B);
A change preventing means (14 to 21) for preventing a change from occurring in the support member (12B) due to a reaction when the first stage (9) is moved with respect to B). Next, in the exposure method according to claim 35, a mask having a pattern is provided .
An exposure method for scanning and exposing a pattern of a mask (11) on a substrate (6) by synchronously moving a mask (11) and a substrate (6), wherein the mask (11) is moved relative to a support member (12B). Support member (12B) according to reaction when moving
Power. The exposure method according to claim 38 is an exposure method in which the mask (11) having the pattern and the substrate (6) are synchronously moved to scan and expose the pattern on the substrate (6). ) And the substrate (6) are prevented from fluctuating due to a reaction when one of the support members (12A, 12B) is moved with respect to the support members (12A, 12B). Also, in the exposure method according to claim 40, the mask (11) having a pattern and the substrate (6) are
Synchronously move the pattern of the mask (11) to the substrate (6)
An exposure method of scanning exposure, fluctuation in the support member (12B) by reaction when the moving is prevented raised against the mask (11) a support member (12B).

【００１４】[0014]

【作用】請求項１記載の露光装置は、基板走査手段
（５）を駆動する際に、基板ベース（１２Ａ）とは別体
の固定部材（１３）の基板ベース付勢手段（１５Ａ，１
７Ａ）より、基板ベース（１２Ａ）に与えられる反作用
と同じ大きさで逆方向の力を同期してその基板ベース
（１２Ａ）に対して与えているので、その基板ベース
（１２Ａ）の傾き又は変形が生じない。従って、マスク
（１１）の共役像と感光基板（６）との重ね合わせ精度
が向上する。In the exposure apparatus according to the first aspect , when driving the substrate scanning means (5), the substrate base urging means (15A, 1) of the fixing member (13) separate from the substrate base (12A).
7A), a reverse force having the same magnitude as the reaction applied to the substrate base (12A) is synchronously applied to the substrate base (12A), so that the substrate base (12A) is inclined or deformed. Does not occur. Therefore, the overlay accuracy of the conjugate image of the mask (11) and the photosensitive substrate (6) is improved.

【００１５】更に、固定部材（１３）にマスクベース
（１２Ｂ）に対して付勢力を与えるマスクベース付勢手
段（１９Ａ，２１Ａ）を設けた場合には、マスク走査手
段（９）を駆動する際にマスクベース（１２Ｂ）に与え
られる反作用と同じ大きさで逆方向の力をマスクベース
（１２Ｂ）に与えることにより、そのマスクベース（１
２Ｂ）の傾き又は変形が生じない。従って、重ね合わせ
精度等がより向上する。Further, when the fixing member (13) is provided with mask base urging means (19A, 21A) for applying an urging force to the mask base (12B), when the mask scanning means (9) is driven. By applying a reverse force to the mask base (12B) with the same magnitude as the reaction applied to the mask base (12B), the mask base (1B)
2B) does not tilt or deform. Therefore, overlay accuracy and the like are further improved.

【００１６】また、基板ベース付勢手段（１５Ａ，１７
Ａ）及びマスクベース付勢手段（１９Ａ，２１Ａ）が、
それぞれ非接触で基板ベース（１２Ａ）及びマスクベー
ス（１２Ｂ）に付勢力を与える場合には、固定部材（１
３）側の振動等が基板ベース（１２Ａ）側に伝わること
がない。特に、それら基板ベース付勢手段（１５Ａ，１
７Ａ）及びマスクベース付勢手段（１９Ａ，２１Ａ）が
リニアモ−ター方式である場合には、固定部材（１３）
から基板ベース（１２Ａ）及びマスクベース（１２Ｂ）
に新たな振動が伝わらない。そして、固定部材（１３）
に与えた力によって固定部材（１３）に歪みや変形が生
じた場合も、固定部材（１３）と基板ベース（１２Ａ）
とは独立した防振台等によって支持されている。従っ
て、リニアモ−ターの電源をオフにすれば、その固定部
材（１３）の歪み等の影響が直接基板ベース（１２Ａ）
に伝わることがない。次に、請求項５記載の露光装置
は、支持部材（１２Ａ，１２Ｂ）に対して第１ステージ
（９または４，５）を移動するときの反作用に応じて支
持部材（１２Ａ，１２Ｂ）に力を付与する付与手段（１
４〜２１）を備えているので、支持部材（１２Ａ，１２
Ｂ）が第１ステージ（９または４，５）の移動の影響を
受けることがない。また、請求項１３記載の露光装置
は、支持部材（１２Ｂ）に対して第１ステージ（９）を
移動するときの反作用に応じて支持部材（１２Ｂ）に力
を付与する付与手段（１４〜２１）を備えているので、
支持部材（１２Ｂ）が第１ステージ（９）の移動の影響
を受けることがないまた、請求項２２記載の露光装置
は、支持部材（１２Ａ，１２Ｂ）に対して第１ステージ
（９または４，５）を移動するときの反作用により支持
部材（１２Ａ，１２Ｂ）に変動が生じないようにする変
動防止手段（１４〜２１）を備えているので、支持部材
（１２Ａ，１２Ｂ）が変動することがない。また、請求
項２７記載の露光装置は、支持部材（１２Ｂ）に対して
第１ステージ（９）を移動するときの反作用により支持
部材（１２Ｂ）に変動が生じないようにする変動防止手
段（１４〜２１）を備えているので、支持部材（１２
Ｂ）が変動することがない。次に、請求項３５記載の露
光方法は、マスク（１１）を支持部材（１２Ｂ）に対し
て移動するときの反作用に応じて支持部材（１２Ｂ）に
力を付与しているので、支持部材（１２Ｂ）がマスク
（１１）を移動する際の反作用の影響を受けることがな
い。また、請求項３８記載の露光方法は、マスク（１
１）と基板（６）との一方を支持部材（１２Ａ，１２
Ｂ）に対して移動するときの反作用により支持部材（１
２Ａ，１２Ｂ）に変動が生じないようにしている。ま
た、請求項４０記載の露光方法は、マスク（１１）を支
持部材（１２Ｂ）に対して移動するときの反作用により
支持部材（１２Ｂ）に変動が生じないようにしている。 Further, the substrate base urging means (15A, 17
A) and the mask base urging means (19A, 21A)
When urging the substrate base (12A) and the mask base (12B) in a non-contact manner, the fixing member (1
3) The vibration on the side is not transmitted to the substrate base (12A) side. In particular, the substrate base urging means (15A, 1
7A) and when the mask base urging means (19A, 21A) is a linear motor type, the fixing member (13)
To substrate base (12A) and mask base (12B)
No new vibration is transmitted. And the fixing member (13)
When the fixing member (13) is distorted or deformed by the force applied to the fixing member (13), the fixing member (13) and the substrate base (12A)
And is supported by an independent vibration isolation table. Therefore, when the power supply of the linear motor is turned off, the influence of distortion of the fixing member (13) is directly exerted on the substrate base (12A).
Is not transmitted. Next, an exposure apparatus according to claim 5.
Is the first stage with respect to the support members (12A, 12B).
(9 or 4, 5) depending on the reaction when moving
Application means (1) for applying a force to the holding members (12A, 12B);
4 to 21), the supporting members (12A, 12A)
B) is the influence of the movement of the first stage (9 or 4,5)
I will not receive it. An exposure apparatus according to claim 13.
Moves the first stage (9) to the support member (12B).
A force is applied to the support member (12B) in response to the reaction when moving.
Is provided, the providing means (14-21) for providing
Influence of the movement of the first stage (9) by the support member (12B)
23. The exposure apparatus according to claim 22, wherein the exposure apparatus does not receive the light.
Is the first stage with respect to the support members (12A, 12B).
Supported by reaction when moving (9 or 4,5)
A change to prevent the members (12A, 12B) from changing.
Since it is provided with the movement preventing means (14-21), the supporting member
(12A, 12B) does not change. Also, billing
Item 27. The exposure apparatus according to Item 27, wherein the support member (12B)
Supported by reaction when moving the first stage (9)
Variation preventing hand for preventing variation from occurring in the member (12B)
Since the step (14 to 21) is provided, the support member (12
B) does not change. Next, the dew of claim 35
The optical method is to move the mask (11) to the support member (12B).
To the support member (12B) according to the reaction when moving
Since the force is applied, the supporting member (12B) is
It is not affected by the reaction when moving (11).
No. The exposure method according to claim 38, wherein the mask (1)
1) and one of the substrates (6) are supported by supporting members (12A, 12A).
B), the support member (1)
2A, 12B) so as not to vary. Ma
The exposure method according to claim 40, further comprising supporting the mask (11).
By the reaction when moving to the holding member (12B)
The support member (12B) does not fluctuate.

【００１７】[0017]

【実施例】以下、本発明の一実施例につき図１〜図３を
参照して説明する。本実施例はスリットスキャン露光方
式の投影露光装置に本発明を適用したものであり、図１
〜図３において図４に対応する部分には同一符号を付し
てその詳細説明を省略する。DESCRIPTION OF THE PREFERRED EMBODIMENTS One embodiment of the present invention will be described below with reference to FIGS. In this embodiment, the present invention is applied to a projection exposure apparatus of a slit scan exposure type, and FIG.
3 to 3, parts corresponding to those in FIG. 4 are denoted by the same reference numerals, and detailed description thereof will be omitted.

【００１８】図１は本実施例の投影露光装置を示し、こ
の図１において、ベース１の上に防振ばね２Ａ及び２Ｂ
を介してインバー（低膨張率の合金）よりなる第１コラ
ム１２Ａを載置し、第１コラム１２Ａ上にインバーより
なる第２コラム１２Ｂを固定する。第１コラム１２Ａの
内部にはＹステージ４及びＸステージ５を介してウエハ
６が保持され、第１コラム１２Ａの上段に鏡筒７を介し
て投影光学系ＰＬが保持されている。また、第２コラム
１２Ｂの上部にレチクル走査ステージ９を介してレチク
ル１１が保持されている。本例の照明光学系１０もレチ
クル１１上のスリット状の照明領域を照明し、レチクル
１１をその照明領域に対してＸ方向に走査するのと同期
して、ウエハ６を−Ｘ方向に走査することにより、スリ
ットスキャン露光方式でレチクル１１のパターンの像が
ウエハ６上に露光される。FIG. 1 shows a projection exposure apparatus according to this embodiment. In FIG.
The first column 12A made of Invar (an alloy having a low expansion coefficient) is placed via the, and the second column 12B made of Invar is fixed on the first column 12A. The wafer 6 is held inside the first column 12A via the Y stage 4 and the X stage 5, and the projection optical system PL is held via the lens barrel 7 above the first column 12A. The reticle 11 is held above the second column 12B via the reticle scanning stage 9. The illumination optical system 10 of this example also illuminates a slit-shaped illumination area on the reticle 11, and scans the wafer 6 in the −X direction in synchronization with scanning the reticle 11 in the X direction with respect to the illumination area. Thus, the image of the pattern of the reticle 11 is exposed on the wafer 6 by the slit scan exposure method.

【００１９】本例ではベース１上の周縁部にインバーよ
りなる固定コラム１３を植設する。そして、第１コラム
１２ＡのＸ方向の一方の側面の凸部１２ａの上面に３個
の永久磁石埋め込み部１４Ａ〜１４Ｃを形成し（図１で
は１４Ａのみが現れている）、それら永久磁石埋め込み
部１４Ａ〜１４Ｃに対向するように、固定コラム１３の
凸部１３ａの底部に３個の電磁石部１５Ａ〜１５Ｃを形
成する（図１では１５Ａのみが現れている）。これと対
称に、第１コラム１２ＡのＸ方向の他方の側面の凸部１
２ｂの上面に３個の永久磁石埋め込み部１６Ａ〜１６Ｃ
を形成し（図１では１６Ａのみが現れている）、それら
永久磁石埋め込み部１６Ａ〜１６Ｃに対向するように、
固定コラム１３の凸部１３ｂの底部に３個の電磁石部１
７Ａ〜１７Ｃを形成する（図１では１５Ａのみが現れて
いる）。永久磁石埋め込み部１４Ａ〜１４Ｃと対応する
電磁石部１５Ａ〜１５Ｃとで３組のリニアモーターが構
成されている。In this embodiment, a fixed column 13 made of invar is planted on the peripheral portion of the base 1. Then, three permanent magnet embedded portions 14A to 14C are formed on the upper surface of the convex portion 12a on one side surface in the X direction of the first column 12A (only 14A is shown in FIG. 1), and these permanent magnet embedded portions are formed. Three electromagnet portions 15A to 15C are formed on the bottom of the convex portion 13a of the fixed column 13 so as to face the 14A to 14C (only 15A is shown in FIG. 1). Contrary to this, the convex portion 1 on the other side surface in the X direction of the first column 12A is provided.
2b, three permanent magnet embedded portions 16A to 16C on the upper surface
(Only 16A is shown in FIG. 1), and these permanent magnet embedded portions 16A to 16C are opposed to each other.
Three electromagnet portions 1 are provided at the bottom of the convex portion 13b of the fixed column 13.
7A to 17C are formed (only 15A is shown in FIG. 1). Three sets of linear motors are constituted by the permanent magnet embedded portions 14A to 14C and the corresponding electromagnet portions 15A to 15C.

【００２０】また、第２コラム１２Ｂの上端のＸ方向の
一方の凸部１２ｃの上面に２個の永久磁石埋め込み部１
８Ａ及び１８Ｂを形成し（図１では１８Ａのみが現れて
いる）、それら永久磁石埋め込み部１８Ａ及び１８Ｂに
対向するように、固定コラム１３の上端の凸部１３ｃの
底部に２個の電磁石部１９Ａ及び１９Ｂを形成する（図
１では１９Ａのみが現れている）。これと対称に、第２
コラム１２Ｂの上端のＸ方向の他方の凸部１２ｄの上面
に２個の永久磁石埋め込み部２０Ａ及び２０Ｂを形成し
（図１では２０Ａのみが現れている）、それら永久磁石
埋め込み部２０Ａ及び２０Ｂに対向するように、固定コ
ラム１３の上端の凸部１３ｄの底部に２個の電磁石部２
１Ａ及び２１Ｂを形成する（図１では２１Ａのみが現れ
ている）。Further, two permanent magnet embedded portions 1 are provided on the upper surface of one convex portion 12c in the X direction at the upper end of the second column 12B.
8A and 18B (only 18A is shown in FIG. 1), and two electromagnet portions 19A are provided on the bottom of the convex portion 13c at the upper end of the fixed column 13 so as to face the permanent magnet embedded portions 18A and 18B. And 19B (only 19A appears in FIG. 1). In contrast to this, the second
Two permanent magnet embedded portions 20A and 20B are formed on the upper surface of the other convex portion 12d in the X direction at the upper end of the column 12B (only 20A is shown in FIG. 1), and these permanent magnet embedded portions 20A and 20B are formed. Two electromagnets 2 are provided on the bottom of the protrusion 13 d at the upper end of the fixed column 13 so as to face each other.
1A and 21B are formed (only 21A is shown in FIG. 1).

【００２１】図２は図１のＡＡ線に沿う断面図であり、
この図２に示すように、３個の永久磁石埋め込み部１４
Ａ〜１４ＣをＹ方向に配列する。そして、両端の永久磁
石埋め込み部１４Ａ及び１４ＣにはそれぞれＸ方向に順
次永久磁石のＮ極部２２Ａ、Ｓ極部２３及びＮ極部２２
Ｂを埋め込み、中央の永久磁石埋め込み部１４ＢにはＹ
方向に順次永久磁石のＮ極部２２Ａ、Ｓ極部２３及びＮ
極部２２Ｂを埋め込む。また、図１の電磁石部１５Ａは
電磁石をＸ方向に配列して構成し、永久磁石埋め込み部
１４Ｂ及び１４Ｃに対向する電磁石部はそれぞれＹ方向
及びＸ方向に電磁石を配列して構成する。FIG. 2 is a sectional view taken along the line AA in FIG.
As shown in FIG. 2, three permanent magnet embedded portions 14 are provided.
A to 14C are arranged in the Y direction. Then, the permanent magnet embedded portions 14A and 14C at both ends are sequentially arranged in the X direction in the N-pole portion 22A, the S-pole portion 23 and the N-pole portion 22 of the permanent magnet.
B, and Y is embedded in the central permanent magnet embedded portion 14B.
N pole portion 22A, S pole portion 23 and N
The pole part 22B is embedded. The electromagnet portion 15A in FIG. 1 is configured by arranging electromagnets in the X direction, and the electromagnet portions facing the permanent magnet embedded portions 14B and 14C are configured by arranging electromagnets in the Y and X directions, respectively.

【００２２】従って、永久磁石埋め込み部１４Ａ及び電
磁石部１５Ａからなるリニアモーター及び永久磁石埋め
込み部１４Ｃ及び対応する電磁石部からなるリニアモー
ターにより、第１コラム１２Ａに対してそれぞれＸ方向
に任意の力Ｆ４Ａ及びＦ４Ｃを付与することができ、中
央の永久磁石埋め込み部１４Ｂ及び対応する電磁石部か
らなるリニアモーターにより、第１コラム１２Ａに対し
てＹ方向に任意の力Ｆ４Ｂを付与することができる。Accordingly, the linear motor composed of the permanent magnet buried portion 14A and the electromagnet portion 15A and the linear motor composed of the permanent magnet buried portion 14C and the corresponding electromagnet portion apply an arbitrary force F4A to the first column 12A in the X direction. And F4C, and an arbitrary force F4B can be applied to the first column 12A in the Y direction by the linear motor including the central permanent magnet embedded portion 14B and the corresponding electromagnet portion.

【００２３】また、第１コラム１２Ａの右側の永久磁石
埋め込み部１６Ａ〜１６Ｃには、それぞれ永久磁石埋め
込み部１４Ａ〜１６Ｃと同様の配列で永久磁石を埋め込
み、対応する電磁石部１７Ａ〜１７Ｃにはそれぞれ対向
する永久磁石の配列方向に電磁石を配列する。そして、
永久磁石埋め込み部１６Ａ，１６Ｂ及び１６Ｃを含むリ
ニアモーターにより、それぞれ第１コラム１２Ａに対し
てＸ方向の任意の力Ｆ５Ａ、Ｙ方向の任意の力Ｆ５Ｂ及
びＸ方向の任意の力Ｆ５Ｃを付与することができる。従
って、左側の３組のリニアモーター及び右側の３組のリ
ニアモーターにより、第１コラム１２Ａに対して水平面
（ＸＹ平面）内で任意の方向の力を付与することがで
き、更に第１コラム１２Ａに対して任意の回転力をも付
与することができる。そこで、スリットスキャン露光時
等にＸステージ５及びＹステージ４に加速度を付与する
際にその反作用が第１コラム１２Ａに加わる場合には、
それら６組のリニアモーターから第１コラム１２Ａに対
してその反作用を打ち消すような力を与えるようにす
る。Further, permanent magnets are embedded in the permanent magnet embedded portions 16A to 16C on the right side of the first column 12A in the same arrangement as the permanent magnet embedded portions 14A to 16C, and the corresponding electromagnet portions 17A to 17C are respectively inserted. The electromagnets are arranged in the direction in which the opposing permanent magnets are arranged. And
Applying an arbitrary force F5A in the X direction, an arbitrary force F5B in the Y direction, and an arbitrary force F5C in the X direction to the first column 12A by the linear motor including the permanent magnet embedded portions 16A, 16B, and 16C, respectively. Can be. Therefore, a force in an arbitrary direction can be applied to the first column 12A in a horizontal plane (XY plane) by the three sets of linear motors on the left side and the three sets of linear motors on the right side. Can be given any rotational force. Therefore, when a reaction is applied to the first column 12A when applying acceleration to the X stage 5 and the Y stage 4 during slit scan exposure or the like,
The six sets of linear motors apply a force to the first column 12A to cancel the reaction.

【００２４】一方、図１において、第２コラム１２Ｂ上
の左側の２個の永久磁石埋め込み部１８Ａ及び１８Ｂに
はそれぞれＸ方向に永久磁石を埋め込み、対応する電磁
石部１９Ａ及び１９ＢもそれぞれＸ方向に電磁石を配列
して構成する。また、第２コラム１２Ｂ上の右側の２個
の永久磁石埋め込み部２０Ａ及び２０ＢにもそれぞれＸ
方向に永久磁石を埋め込み、対応する電磁石部２１Ａ及
び２１ＢもそれぞれＸ方向に電磁石を配列して構成す
る。従って、永久磁石埋め込み部１８Ａ及び１８Ｂをそ
れぞれ含む２個のリニアモーターにより第２コラム１２
Ｂに対してＸ方向の任意の力が付与され、永久磁石埋め
込み部２０Ａ及び２０Ｂをそれぞれ含む２個のリニアモ
ーターからも第２コラム１２Ｂに対してＸ方向の任意の
力が付与される。On the other hand, in FIG. 1, permanent magnets are embedded in the two permanent magnet embedded portions 18A and 18B on the left side of the second column 12B in the X direction, and the corresponding electromagnet portions 19A and 19B are also shifted in the X direction. An electromagnet is arranged and configured. Further, X is also applied to the two permanent magnet embedded portions 20A and 20B on the right side on the second column 12B.
The permanent magnets are embedded in the direction, and the corresponding electromagnet portions 21A and 21B are also configured by arranging the electromagnets in the X direction. Therefore, the second column 12 is driven by two linear motors each including the permanent magnet embedded portions 18A and 18B.
An arbitrary force in the X direction is applied to B, and an arbitrary force in the X direction is applied to the second column 12B from the two linear motors including the permanent magnet embedded portions 20A and 20B.

【００２５】この実施例では、レチクル１１はレチクル
走査ステージ９によりＸ方向に走査されるため、第２コ
ラム１２Ｂに対する反作用はＸ方向に働く。従って、第
２コラム１２Ｂに対してその反作用を打ち消すためにリ
ニアモーターから付与する力は、Ｘ方向の力のみで十分
である。なお、レチクル１１をＹ方向にも駆動する場合
には、Ｙ方向への力を独立に付与するためのリニアモー
ターを並列に装着すればよい。In this embodiment, the reticle 11 is scanned by the reticle scanning stage 9 in the X direction, so that the reaction on the second column 12B acts in the X direction. Therefore, the force applied from the linear motor to cancel the reaction on the second column 12B is only the force in the X direction. When the reticle 11 is driven also in the Y direction, linear motors for independently applying a force in the Y direction may be mounted in parallel.

【００２６】次に、本実施例の動作につき図３を参照し
て説明する。本実施例でスリットスキャン露光を開始す
るときには、図３に示すように、レチクル１１にＸ方向
の加速度ｇ１が加わり、ウエハ６に−Ｘ方向の加速度ｇ
２が加わり、それらの反作用として第２コラム１２Ｂに
は−Ｘ方向の力Ｆ１が付与され、第１コラム１２Ａには
Ｘ方向の力Ｆ２が付与される。そこで、永久磁石埋め込
み部１８Ａ及び電磁石部１９Ａよりなるリニアモーター
及び第２コラム１２Ｂの上部の他の３個のリニアモータ
ーにより、第２コラム１２Ｂに対してＸ方向に合計でＦ
１の力を与える。Next, the operation of this embodiment will be described with reference to FIG. When the slit scan exposure is started in this embodiment, an acceleration g1 in the X direction is applied to the reticle 11, and an acceleration g in the −X direction is applied to the wafer 6, as shown in FIG.
2 are applied, and as a reaction therebetween, a force F1 in the −X direction is applied to the second column 12B, and a force F2 in the X direction is applied to the first column 12A. Therefore, the linear motor including the permanent magnet embedded portion 18A and the electromagnet portion 19A and the other three linear motors on the upper part of the second column 12B provide a total of F in the X direction with respect to the second column 12B.
Give 1 power.

【００２７】また、永久磁石埋め込み部１４Ａ及び電磁
石部１５Ａよりなるリニアモーター及び第１コラム１２
Ａの側面部の他の５個のリニアモーターにより、第１コ
ラム１２Ａに対して−Ｘ方向に合計でＦ２の力を与え
る。なお、永久磁石部１４Ａ等及び電磁石部１５Ａ等は
共に固定されているので、リニアモーターとして力を発
生する場合でも実際の移動は行われない。これにより、
第１コラム１２Ａ及び第２コラム１２Ｂに働く力がそれ
ぞれ零となり、第１コラム１２Ａ及び第２コラム１２Ｂ
の傾斜又は変形は生ずることがなく、レチクル１１の共
役像とウエハ６との重ね合わせ精度は高精度に維持され
る。A linear motor comprising a permanent magnet embedded portion 14A and an electromagnet portion 15A and a first column 12
A total of F2 force is applied to the first column 12A in the −X direction by the other five linear motors on the side surface of A. Since the permanent magnet portion 14A and the like and the electromagnet portion 15A and the like are fixed, even when a force is generated as a linear motor, actual movement is not performed. This allows
The forces acting on the first column 12A and the second column 12B become zero respectively, and the first column 12A and the second column 12B
Of the reticle 11 and the wafer 6 are maintained with high accuracy.

【００２８】また、図２に示すように、Ｙステージ４の
位置及びＸステージ５の位置によりステージ系の重心が
投影光学系ＰＬの光軸からずれた場合で、且つＹステー
ジ４をも駆動するような場合には、そのステージ系には
２種類の力ベクトル〈ＦＹ〉及び〈ＦＸ〉が作用する。
このような場合には、図２において左側の３個のリニア
モーターにより第１コラム１２Ａに付与する力ベクトル
を〈ＦＡ〉、右側の３個のリニアモーターにより第１コ
ラムに付与する力ベクトルを〈ＦＢ〉として、これらの
力配分を次のようにする。〈ＦＡ〉＋〈ＦＢ〉＝〈ＦＸ〉＋〈ＦＹ〉これにより、第１コラム１２Ａに作用するねじれ力が零
になる。As shown in FIG. 2, when the center of gravity of the stage system is shifted from the optical axis of the projection optical system PL due to the position of the Y stage 4 and the position of the X stage 5, the Y stage 4 is also driven. In such a case, two types of force vectors <FY> and <FX> act on the stage system.
In such a case, the force vector applied to the first column 12A by the three linear motors on the left side in FIG. 2 is <FA>, and the force vector applied to the first column by the three linear motors on the right side is <FA>. FB>, these force distributions are as follows. <FA> + <FB> = <FX> + <FY> Thereby, the torsional force acting on the first column 12A becomes zero.

【００２９】なお、リニアモーターは発熱量が比較的大
きいが、本例のリニアモーターはレチクル１１、投影光
学系ＰＬ及びウエハ６を含む投影露光部から離れて配置
されているので、その影響は無視できる程度である。但
し、それらリニアモーターにそれぞれ空冷又は液冷方式
等の発熱防止機構を装着することにより、その発熱の影
響をより小さくすることができる。Although the linear motor generates a relatively large amount of heat, the linear motor of this embodiment is disposed away from the projection exposure section including the reticle 11, the projection optical system PL, and the wafer 6, so that the effect is ignored. It is possible. However, by attaching an air-cooling or liquid-cooling type heat prevention mechanism to each of the linear motors, the influence of the heat generation can be further reduced.

【００３０】また、上述実施例では、第１コラム１２Ａ
及び第２コラム１２Ｂに対して固定コラム１３からリニ
アモーター方式で力を付与しているが、例えば圧縮空気
を吹き付けるような方式で第１コラム１２Ａ及び第２コ
ラム１２Ｂに対して力を与えるようにしてもよい。更
に、例えば固定コラム１３と第１コラム１２Ａとの間に
圧縮コイルばねを介装して、固定コラム１３側からその
圧縮コイルばねを介して第１コラム１２Ａに力を付与す
るようにしてもよい。圧縮コイルばねを用いる場合に
は、ほとんど非接触方式と同等に、固定コラム１３側の
振動等が第１コラム１２Ａに伝わるのを防止することが
できる。In the above embodiment, the first column 12A
And a force is applied to the second column 12B from the fixed column 13 by a linear motor method. For example, the force is applied to the first column 12A and the second column 12B by a method of blowing compressed air. You may. Further, for example, a compression coil spring may be interposed between the fixed column 13 and the first column 12A, and a force may be applied to the first column 12A from the fixed column 13 via the compression coil spring. . When the compression coil spring is used, it is possible to prevent the vibration and the like of the fixed column 13 from being transmitted to the first column 12A, almost as in the non-contact type.

【００３１】なお、上述実施例では、固定コラム１３を
ベース１上に配置しているが、ベース１以外であって
も、ステージ４，５，９の査定時に振動しない部材が存
在すれば、この部材に固定コラム１３を固定するように
しても良い。また、上述実施例ではウエハ側の電磁石部
１５Ａ〜１５Ｃ，１７Ａ〜１７Ｃとレチクル側の電磁石
部１９Ａ〜１９Ｃ，２１Ａ〜２１Ｃは共に固定コラム１
３に固定されているが、ウエハ側の電磁石部とレチクル
側の電磁石部とをそれぞれ別の固定コラムに固定するよ
うにしても良い。In the above-described embodiment, the fixed column 13 is arranged on the base 1. However, if there is a member that does not vibrate when the stages 4, 5, and 9 are evaluated, the fixed column 13 may be provided other than the base 1. The fixing column 13 may be fixed to a member. In the above embodiment, the electromagnet portions 15A to 15C and 17A to 17C on the wafer side and the electromagnet portions 19A to 19C and 21A to 21C on the reticle side are both fixed columns 1.
3, the electromagnet portion on the wafer side and the electromagnet portion on the reticle side may be respectively fixed to different fixed columns.

【００３２】また、図１の実施例では、第１コラム１２
Ａの内部にＹステージ４及びＸステージ５が収納され、
その底部とベース１との間に防振ばね２Ａ，２Ｂが介装
されているが、その第１コラム１２Ａを鏡筒７の保持部
を中心として左右に拡げて、このように拡げられた部分
とベース１との間にそれぞれ防振ばね２Ａ，２Ｂを介装
しても良い。この場合には、第１コラムの鏡筒７の保持
部の下に、Ｕ字型のコラムを好ましくは一体の金物とし
て取り付けて、このＵ字型のコラム上にそれらＹステー
ジ４及びＸステージ５を載置すると良い。このような構
成により、振動の影響が更に低減される。In the embodiment shown in FIG. 1, the first column 12
The Y stage 4 and the X stage 5 are stored inside A,
Anti-vibration springs 2A and 2B are interposed between the bottom portion and the base 1. The first column 12A is expanded right and left around the holding portion of the lens barrel 7, and the expanded portion is provided. Anti-vibration springs 2A and 2B may be interposed between the base and the base 1, respectively. In this case, a U-shaped column is mounted, preferably as an integral piece of metal, under the holding portion of the barrel 7 of the first column, and the Y stage 4 and the X stage 5 are mounted on the U-shaped column. Should be placed. With such a configuration, the influence of vibration is further reduced.

【００３３】このように、本発明は上述実施例に限定さ
れず本発明の要旨を逸脱しない範囲で種々の構成を取り
得る。As described above, the present invention is not limited to the above-described embodiment, and can take various configurations without departing from the gist of the present invention.

【００３４】[0034]

【発明の効果】請求項１記載の露光装置は、基板ベ−ス
に与えられる力と逆方向で大きさが等しい力を基板ベ−
ス付勢手段からその基板ベースに与えるようにしたの
で、基板ベ−スの傾きや変形が生ずることがなく、マス
クと感光基板との相対位置関係が変化しにくいという利
点がある。また、マスクベースに与えられる力と逆方向
で大きさが等しい力をマスクベ−ス付勢手段からそのマ
スクベースに与えるようにした場合には、マスクベース
の傾きや変形をも抑制することができ、マスクと感光基
板との相対位置関係をより安定に維持できる利点があ
る。更に、基板ベ−ス及びマスクベースにかかる力が零
になるため、基板ベ−ス及びマスクベースとして剛性の
比較的小さな部材を使用することができ、設計上及び製
造上も有利である。According to the first aspect of the present invention, in the exposure apparatus , a force having the same magnitude in a direction opposite to the force applied to the substrate base is applied.
Since the substrate bias is applied to the substrate base, there is an advantage that the inclination and deformation of the substrate base do not occur, and the relative positional relationship between the mask and the photosensitive substrate hardly changes. Further, when a force equal in magnitude in the opposite direction to the force applied to the mask base is applied from the mask base urging means to the mask base, the inclination and deformation of the mask base can be suppressed. This has the advantage that the relative positional relationship between the mask and the photosensitive substrate can be more stably maintained. Furthermore, since the force applied to the substrate base and the mask base becomes zero, relatively rigid members can be used as the substrate base and the mask base, which is advantageous in design and manufacturing.

【００３５】また、その基板ベ−ス付勢手段及びそのマ
スクベ−ス付勢手段が、それぞれ非接触でその基板ベ−
ス及びそのマスクベ−スに付勢力を与える場合には、固
定部材側の振動等がそれら基板ベ−ス及びマスクベ−ス
の伝わることが無い。特に、それら基板ベ−ス付勢手段
及びマスクベ−ス付勢手段が、それぞれリニアモ−ター
である場合には、全体の構成が簡略化できる。次に、請
求項５および１３記載の露光装置は、支持部材が第１ス
テージの移動の影響を受けることがないので、マスクの
パターンを高精度で基板に露光することができる。ま
た、請求項２２および２７記載の露光装置は、支持部材
が変動することがないので、マスクのパターンを高精度
で基板に露光することができる。また、請求項３５記載
の露光方法は、支持部材がマスクを移動する際の反作用
の影響を受けることがないので、マスクのパターンを高
精度で基板に露光することができる。また、請求項３８
記載の露光方法は、マスクと基板との一方を支持部材に
対して移動するときの反作用により支持部材に変動が生
じないようにしているので、マスクのパターンを高精度
で基板に露光することができる。また、請求項４０記載
の露光方法は、マスクを支持部材に対して移動するとき
の反作用により支持部材に変動が生じないようにしてい
るので、マスクのパターンを高精度で基板に露光するこ
とができる。 Further, the substrate base urging means and the mask base urging means are respectively provided in a non-contact manner.
When an urging force is applied to the base and the mask base, vibrations and the like on the fixing member side are not transmitted to the substrate base and the mask base. In particular, when the substrate-based urging means and the mask-based urging means are respectively linear motors, the overall configuration can be simplified. Next,
The exposure apparatus according to claims 5 and 13, wherein the supporting member is the first switch.
Because it is not affected by the movement of the stage,
The pattern can be exposed on the substrate with high precision. Ma
The exposure apparatus according to claim 22, wherein the support member
Mask pattern does not fluctuate, so the mask pattern can be
To expose the substrate. Claim 35
Exposure method, the reaction when the support member moves the mask
The mask pattern
The substrate can be exposed with high precision. Claim 38
In the exposure method described, one of the mask and the substrate is used as a support member.
The support member fluctuates due to the reaction when moving
High precision mask pattern
To expose the substrate. Claim 40
The exposure method of (1) is performed when the mask is moved with respect to the support member.
Of the support member due to the reaction of
Therefore, the mask pattern can be exposed on the substrate with high accuracy.
Can be.

[Brief description of the drawings]

【図１】本発明の一実施例を示す構成図である。FIG. 1 is a configuration diagram showing one embodiment of the present invention .

【図２】図１のＡＡ線に沿う断面図である。FIG. 2 is a sectional view taken along the line AA in FIG.

【図３】図１の実施例で第１コラム１２Ａ及び第２コラ
ム１２Ｂに作用する力を示す説明図である。FIG. 3 is an explanatory diagram showing forces acting on a first column 12A and a second column 12B in the embodiment of FIG.

【図４】従来の投影露光装置を示す構成図である。FIG. 4 is a configuration diagram showing a conventional projection exposure apparatus.

【図５】（ａ）は図４の投影露光装置がステージ駆動時
に傾斜する状態を示す図、（ｂ）は図４の投影露光装置
のコラムがステージ駆動時に変形する様子を示す図であ
る。5A is a diagram illustrating a state in which the projection exposure apparatus of FIG. 4 is inclined when the stage is driven, and FIG. 5B is a diagram illustrating a state in which a column of the projection exposure apparatus in FIG. 4 is deformed when the stage is driven.

[Explanation of symbols]

１ベース２Ａ，２Ｂ防振ばね４Ｙステ−ジ５Ｘステージ６ウエハＰＬ投影光学系７鏡筒９レチクル走査ステージ１０照明光学系１１レチクル１２Ａ第１コラム１２Ｂ第２コラム１３固定コラム１４Ａ，１６Ａ，１８Ａ，２０Ａ永久磁石埋め込み部１５Ａ，１７Ａ，１９Ａ，２１Ａ電磁石部 Reference Signs List 1 base 2A, 2B anti-vibration spring 4 Y stage 5 X stage 6 wafer PL projection optical system 7 lens barrel 9 reticle scanning stage 10 illumination optical system 11 reticle 12A first column 12B second column 13 fixed column 14A, 16A, 18A, 20A Permanent magnet embedded part 15A, 17A, 19A, 21A Electromagnet part

───────────────────────────────────────────────────── フロントページの続き (58)調査した分野(Int.Cl.⁷，ＤＢ名) H01L 21/027 G03F 7/20 G03F 9/00 ──────────────────────────────────────────────────続き Continued on the front page (58) Field surveyed (Int.Cl. ⁷ , DB name) H01L 21/027 G03F 7/20 G03F 9/00

Claims

(57) [Claims]

An illumination optical system for illuminating an illumination area having a predetermined shape; mask scanning means for holding the mask and scanning the mask relative to the illumination area; Mask base, a projection optical system for projecting an image of the pattern on the mask in the illumination area onto a photosensitive substrate, and holding the photosensitive substrate to hold the photosensitive substrate against a conjugate image of the illumination area. A substrate scanning unit for relatively scanning, and a substrate base on which the substrate scanning unit is mounted, by synchronously scanning the mask and the photosensitive substrate relative to the illumination area, An exposure apparatus for projecting an image of a pattern in an area on the mask larger than the illumination area on the photosensitive substrate, wherein the exposure apparatus is attached to a fixing member arranged independently of the substrate base with respect to the substrate base. Give power A substrate base urging means for applying a force substantially equal in magnitude to a direction opposite to a force applied to the substrate base when the photosensitive substrate is relatively scanned with respect to a conjugate image of the illumination area; Characterized in that it is applied to the substrate base from
Exposure equipment .

2. The method according to claim 1, wherein the mask base is placed on the substrate base, and the fixing member is provided with mask base urging means for applying an urging force to the mask base. 2. The exposure apparatus according to claim 1, wherein a force having substantially the same magnitude in a direction opposite to the force applied to the mask base during scanning is applied from the mask base urging means to the mask base.
Place .

3. The exposure apparatus according to claim 2, wherein the substrate base urging unit and the mask base urging unit apply an urging force to the substrate base and the mask base in a non-contact manner.

4. The exposure apparatus according to claim 3, wherein each of the substrate base urging unit and the mask base urging unit is a linear motor.

5. The mask and the substrate having a pattern by synchronously moving, in the exposure apparatus for scanning exposing the pattern on the substrate, and holding one of said mask and said substrate for said scanning exposure A first stage that moves, a support member that movably supports the first stage, and an applying unit that applies a force to the support member in response to a reaction when the first stage moves with respect to the support member. An exposure apparatus, comprising:

6. The apparatus according to claim 1, wherein the first stage moves while holding the substrate, and the applying means applies a force corresponding to a reaction when the first stage is moved to the support member. The exposure apparatus according to claim 5, wherein

7. The apparatus according to claim 7 , further comprising a second stage that moves while holding the other of the mask and the substrate, wherein the applying unit applies a force corresponding to a reaction when moving the second stage to the support member. The exposure apparatus according to claim 6, wherein the exposure apparatus is provided.

8. The apparatus according to claim 5 , wherein said applying means applies a force to said support member from substantially the same height as the first stage supported by said support member. Exposure apparatus according to the above.

9. The exposure according to claim 5, wherein said applying means is capable of applying a force in the same direction as the moving direction of said first stage to said support member. apparatus.

10. The apparatus according to claim 5 , wherein said applying means is capable of applying a force in a direction intersecting with a moving direction of said first stage to said support member. Exposure equipment.

11. An exposure apparatus according to claim 5, wherein said applying means is capable of applying a rotational force to said support member.

12. The reaction An exposure apparatus according to claim 5, characterized in that occur during acceleration operation of the first stage.

13. A mask having a pattern and a substrate are the same.
And the period moves, in an exposure apparatus for scanning exposure <br/> light to the substrate a pattern of the mask, a first stage which is movable while holding the mask, a support member for movably supporting said first stage And an applying unit for applying a force to the support member in response to a reaction when the first stage moves with respect to the support member.

14. A second stage which holds the substrate and is movable with respect to the support member, wherein the applying means applies a force corresponding to a reaction when moving the second stage to the support member. The exposure apparatus according to claim 13, wherein:

15. The first applying means for applying a force corresponding to a reaction when moving the first stage to the support member, and the applying means corresponding to a reaction when moving the second stage. Second to apply force to the support member
The exposure apparatus according to claim 14, further comprising an application unit.

16. The support member has a first support member for supporting the first stage and a second support member for supporting the second stage, and the first applying means is provided on the first support member. 16. The exposure apparatus according to claim 15, wherein a force is applied, and the second applying unit applies a force to the second support member.

17. The apparatus according to claim 5, further comprising a frame member arranged independently of said support member, wherein said frame member is provided with at least a part of said applying means.
7. The exposure apparatus according to claim 6.

18. An exposure apparatus according to claim 17, wherein said applying means has an electromagnetic motor.

19. An exposure apparatus according to claim 18, further comprising a cooling mechanism for cooling said electromagnetic motor.

20. An exposure apparatus according to claim 5, wherein said applying means applies a force to said support member in a non-contact manner.

21. An exposure apparatus according to claim 20, wherein said non-contact force is an electromagnetic force.

22. An exposure apparatus for synchronously moving a mask having a pattern and a substrate and scanning and exposing the pattern on the substrate, wherein one of the mask and the substrate is held for the scanning exposure. A first stage that moves, a support member that movably supports the first stage, and a change that prevents a change in the support member due to a reaction when the first stage moves with respect to the support member. An exposure apparatus comprising: a prevention unit;

23. The fluctuation preventing device according to claim 1 , wherein a force is applied to the support member in response to a reaction when the first stage is moved so that the support member does not fluctuate. An exposure apparatus according to claim 22.

24. The apparatus according to claim 24, wherein the first stage moves while holding the mask, and the fluctuation preventing means prevents the support member from being changed by a reaction when the first stage moves. The exposure apparatus according to claim 22 or 23, wherein

25. A second stage for moving while holding the other of the mask and the substrate, wherein the fluctuation preventing means does not cause fluctuations in the support member due to a reaction when the second stage moves. 25. The exposure apparatus according to claim 24, wherein:

26. An exposure apparatus according to claim 22, wherein said reaction occurs during an acceleration operation of said first stage.

27. A mask having a pattern and a substrate are the same.
And the period moves, in an exposure apparatus for scanning exposure <br/> light to the substrate a pattern of the mask, a first stage which is movable while holding the mask, a support member for movably supporting said first stage An exposure apparatus, comprising: a change preventing unit configured to prevent a change in the support member due to a reaction when the first stage is moved with respect to the support member.

28. A second stage which holds the substrate and is movable with respect to the support member, wherein the fluctuation preventing means causes a fluctuation in the support member due to a reaction when the second stage moves. 28. The exposure apparatus according to claim 27, wherein the exposure does not occur.

29. The apparatus according to claim 29, wherein the fluctuation preventing means prevents the fluctuation of the supporting member by applying a force corresponding to a reaction when the stage is moved to the supporting member. 29. The exposure apparatus according to 27 or 28.

30. A first fluctuation preventing means corresponding to a reaction when the first stage moves, and a second fluctuation preventing means corresponding to a reaction when the second stage moves. The exposure apparatus according to claim 28, comprising:

31. The exposure apparatus according to claim 22, wherein the fluctuation of the support member includes a deformation of the support member.

32. The exposure apparatus according to claim 22, wherein the fluctuation of the support member includes an inclination of the support member.

33. The exposure apparatus according to claim 22, wherein the fluctuation of the support member includes a vibration of the support member.

34. A device manufacturing method using the exposure apparatus according to claim 1.

35. A mask having a pattern and a substrate are the same.
And period moving in the exposure method of scanning exposure <br/> light pattern of the mask on the substrate, applying a force to the support member in accordance with the reaction when moving the mask relative to the support member Exposure method characterized by the above-mentioned.

36. The exposure method according to claim 35, wherein a force corresponding to a reaction when the substrate is moved with respect to the support member is applied to the support member.

37. The exposure method according to claim 35, wherein an electromagnetic force is applied to the support member.

38. An exposure method in which a mask having a pattern and a substrate are synchronously moved to scan and expose the pattern on the substrate, wherein one of the mask and the substrate is moved relative to a supporting member. An exposure method, wherein the supporting member does not fluctuate due to a reaction.

39. The exposure method according to claim 38, wherein said reaction occurs when one of said mask and said substrate is accelerated.

40. A mask having a pattern and a substrate are the same.
And period moving in the exposure method of scanning exposure <br/> light pattern of the mask on the substrate, so that variations in said support member by a reaction at the time of moving the mask relative to the support member does not occur An exposure method comprising:

41. The exposure method according to claim 38, wherein a change in the support member is prevented by applying a force corresponding to the reaction to the support member.

42. The exposure method according to claim 38, wherein the fluctuation of the support member includes a deformation of the support member.

43. The exposure method according to claim 38, wherein the fluctuation of the support member includes an inclination of the support member.

44. The exposure method according to claim 38, wherein the fluctuation of the support member includes vibration of the support member.

45. A device manufacturing method using the exposure method according to claim 38.