JP3326833B2 - Semiconductor laser and light emitting diode - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor laser, and more particularly, to a semiconductor laser capable of emitting blue or green light.

[0002]

2. Description of the Related Art In recent years, there has been an increasing demand for a semiconductor laser having a short wavelength in order to improve the recording density of an optical disc and the resolution of a laser printer. I have.

[0003] As a result, it has recently been reported that a semiconductor laser emitting blue or green light having an emission wavelength of 490 to 520 nm can be realized by using a ZnSSe-based compound semiconductor as a material of a cladding layer. (For example, Nikkei Electronics, April 27, 1992
No., no. 552, pp. 90-91).

[0004]

As described above, ZnS
A semiconductor laser capable of emitting blue or green light using a Se-based compound semiconductor as a material for a cladding layer has been realized, but a semiconductor laser capable of emitting blue or green light using a ZnMgSSe-based compound semiconductor as a material for a cladding layer. Was difficult to achieve.

Accordingly, an object of the present invention is to provide a ZnMgSS
Zn _x such _{e Mg y Cd 1-xy S} a Se b Te 1-ab
It is an object of the present invention to provide a semiconductor laser capable of emitting blue or green light using a compound semiconductor as a material of a cladding layer.

[0006]

In order to achieve the above object, a semiconductor laser according to a first aspect of the present invention comprises a first semiconductor of a first conductivity type made of ZnMgSSe laminated on a compound semiconductor substrate (1). A cladding layer (3), a first optical waveguide layer (4) made of ZnSSe laminated on the first cladding layer (3), and a ZnCdSe laminated on the first optical waveguide layer (4). Active layer (5), a second optical waveguide layer (6) made of ZnSSe laminated on the active layer (5), and Zn laminated on the second optical waveguide layer (6).
A second cladding layer (7) of MgSSe of a second conductivity type , wherein the first cladding layer (3) and the first light
A waveguide layer (4), a second optical waveguide layer (6) and a second cladding layer;
The layer (7) is lattice-matched with the compound semiconductor substrate (1).
The active layer (5) is a strained layer .

[0007] A semiconductor laser according to a second aspect of the present invention.
Chromatography was stacked on the compound semiconductor substrate (1) ZnMg
A first conductivity type first cladding layer made of SSe;
And ZnMgS laminated on the first cladding layer (3)
A first optical waveguide layer (11) made of Se, an active layer (5) made of ZnCdSe laminated on the first optical waveguide layer (11), and a ZnMgSSe laminated on the active layer (5).
A second optical waveguide layer (12) composed of: and a second conductive type second cladding layer (7) composed of ZnMgSSe laminated on the second optical waveguide layer (12) . Kula
Layer (3), first optical waveguide layer (11), second optical waveguide
The layer (12) and the second cladding layer (7) are compound semiconductors
The substrate (1) is lattice-matched and the active layer (5) is
It is a strained layer .

[0008]

A semiconductor laser according to a third aspect of the present invention.
Over a semiconductor laser according to the first or second aspect
In chromatography, but the thickness of the active layer (5 or 13) is below the critical thickness.

[0010] A semiconductor laser according to a fourth aspect of the present invention.
Over the first invention, in a semiconductor laser according to the second invention or the third invention, the first optical waveguide layer (4 or 1
1) and the second optical waveguide layer (6 or 12) and the active layer (5
Or 13) having a band gap difference of 0.15 eV or more.

[0011]

According to the semiconductor laser of the first aspect of the present invention, the first cladding layer (3) and the second cladding layer (7) made of ZnMgSSe and the first optical waveguide layer (4) made of ZnSSe are provided. ) And the second optical waveguide layer (6)
When, using the active layer (5) made of ZnCdSe, deer
Also, the first cladding layer (3), the first optical waveguide layer (4),
The second optical waveguide layer (6) and the second cladding layer (7) are formed
Lattice-matched with the compound semiconductor substrate (1) and active
Since the layer (5) is a strained layer , ZnMgSSe
Can be realized as a material of a cladding layer, which can emit blue to green light.

A semiconductor laser according to a second aspect of the present invention.
According to chromatography, the first cladding layer (3) made of ZnMgSSe, a second cladding layer (7), a first optical waveguide layer (1
1) and a second optical waveguide layer (12) and an active layer (5) made of ZnCdSe , and a first cladding layer
(3) First optical waveguide layer (11), second optical waveguide layer (1)
2) and the second cladding layer (7) are a compound semiconductor substrate
The active layer (5) is lattice-matched with (1)
With the only layer, a semiconductor laser capable of emitting blue or green light using ZnMgSSe as the material of the cladding layer can be realized.

[0013]

A semiconductor laser according to a third aspect of the present invention.
According to chromatography, the active layer by the thickness of the (5 or 13) that the critical film is thick or less, the active layer (5 or 1
Dislocation can be prevented from occurring during the epitaxial growth of 3).

[0015] A semiconductor laser according to a fourth aspect of the present invention.
According to chromatography, the first optical waveguide layer (4 or 11) and the second
Optical waveguide layer (6 or 12) and active layer (5 or 13)
When the difference between the band gaps is 0.15 eV or more, continuous oscillation at room temperature becomes possible.

[0016]

Embodiments of the present invention will be described below with reference to the drawings. In all the drawings of the embodiments, the same portions are denoted by the same reference numerals.

FIG. 1 shows a semiconductor laser according to a first embodiment of the present invention.

As shown in FIG. 1, in the semiconductor laser according to the first embodiment, for example, S
On an n-type GaAs substrate 1 having a (100) plane orientation doped with i, for example, n doped with Cl as an n-type impurity
-Type ZnSe buffer layer 2, for example, Cl as n-type impurity
-Doped n-type Zn _x Mg _1-x S _y Se _1-y cladding layer 3, for example n-doped with Cl as n-type impurity
Type ZnS _p Se _1-p optical waveguide layer 4, for example, undoped Z
n _{1 -z} Cd _z Se active layer 5, for example, N as a p-type impurity
-Doped p-type ZnS _p Se _1-p optical waveguide layer 6 and, for example, p-type Zn _x Mg doped with N as a p-type impurity
_{1-x S y Se 1-} y cladding layer 7 are sequentially laminated.
In this case, the Zn _1-z Cd _z Se active layer 5 is a strained layer.

[0019] On the p-type _{Zn x Mg 1-x S y} Se 1-y cladding layer 7, for example, polyimide having a stripe-shaped opening 8a, SiO _x film, an insulating layer 8 consisting of a the SiN _x film is formed Have been. Then, p-type _{Zn x Mg 1-x S y} Se 1-y Au electrode, for example 9 as a p-side electrode on the cladding layer 7 is in contact through the opening 8a. On the other hand, on the back surface of the n-type GaAs substrate 1, I
The n electrode 10 is in contact.

In this case, n-type Zn _x Mg _1-x S _y Se
_1-y clad layer 3 and p-type Zn _x Mg _1-x S _y Se _1-y
The Zn composition ratio x of the cladding layer 7 is, for example, 0.97, the S composition ratio y is, for example, 0.09, and the band gap E _{g at} that time is about 2.87 eV. Also, n-type ZnS _p S
e _1-p optical waveguide layer 4 and p-type ZnS _p Se _1-p optical waveguide layer 6
Is, for example, 0.06, and the band gap E _{g at} that time is about 2.82 eV. Furthermore, Zn
The Cd composition ratio z of the _1-z Cd _z Se active layer 5 is, for example, 0.1
8, and the band gap E _{g at} that time is about 2.57.
eV. In this case, the Zn _1-z Cd _z Se active layer 5, the n-type ZnS _p Se _1-p optical waveguide layer 4, and the p-type ZnS _p Se
The difference between the band gap E _g and the _1-p optical waveguide layer 6 is 0.25.
eV. Here, the difference between the band gaps E _g is
In order to enable laser oscillation, generally 0.3 eV
According to the knowledge of the present inventor, laser oscillation is possible if the difference of E _g is 0.15 eV or more.

[0021] Incidentally, the value of the band gap E _g of the above respective layers, of the _{Zn x Mg 1-x S y} Se 1-y of Zn composition ratio x and S composition ratio y and the band gap E _g and the lattice constant a This is obtained from FIG. 4 showing the relationship, and is approximate because there is an error of about ± 0.05 in the Zn composition ratio x and the S composition ratio y. That is, FIG. 4 shows that Zn _x Mg _1-x S
changing the Zn composition ratio x and the S composition ratio y of _y Se _1-y ,
The band gap E _g obtained from the result of measuring the energy of band edge emission by photoluminescence (PL) measurement at 77 K (liquid nitrogen temperature) of the material of each composition and the (400) peak of X-ray diffraction were obtained. The obtained lattice constant a (Å) is added to plot points indicating the composition of each material as [E _g , a]. FIG.
In the equation, a straight line A indicates a composition lattice-matched with GaAs, and y =
It is represented by −1.158x + 1.218.

In this case, n-type Zn _x Mg _1-x S _y Se
_1-y cladding layer 3, n-type ZnS _p Se _1-p optical waveguide layer 4,
p-type ZnS _p Se _1-p optical waveguide layer 6 and p-type Zn _x Mg
_{1-x S y Se 1-} y cladding layer 7 are those lattice-matched to GaAs.

The thickness of the n-type Zn _x Mg _1-x S _y Se _1-y cladding layer 3 is, for example, 0.1 μm and the n-type ZnS _p Se _1-p
The thickness of the optical waveguide layer 4 is, for example, 0.5 μm, and Zn _{1 -z} Cd _z
The thickness of the Se active layer 5 is, for example, 0.1 μm, and the p-type ZnS _p
The thickness of the Se _1-p optical waveguide layer 6 is, for example, 0.5 μm, and the p-type Z
The thickness of the _{n x Mg 1-x S y} Se 1-y cladding layer 7 is 1μm, for example.

Further, the thickness of the n-type ZnSe buffer layer 2 is small because there is a lattice mismatch between ZnSe and GaAs. The thickness is selected to be sufficiently smaller than the critical thickness of ZnSe (及 び 100 nm), specifically, for example, in the range of 5 to 10 nm in order to prevent the occurrence of dislocation during epitaxial growth of the layer 2 and each layer thereon. It is.

Next, a method of manufacturing the semiconductor laser according to the first embodiment having the above-described structure will be described.

To manufacture the semiconductor laser according to the first embodiment, first, an n-type ZnSe buffer layer 2 and an n-type Zn _x Mg _{1 are formed} on an n-type GaAs substrate 1 by, for example, molecular beam epitaxy (MBE). _-x S _y Se _1-y cladding layer 3, n-type ZnS _p Se _1-p optical waveguide layer _{4, Zn 1-z Cd z} Se active layer 5 of undoped, p-type ZnS _p Se _1-p optical waveguide layer 6 and sequentially epitaxially growing a p-type _{Zn x Mg 1-x S y} Se 1-y cladding layer 7.

In the above-mentioned epitaxial growth by the MBE method, for example, the purity of the Zn raw material is 99.99.
99% Zn, purity 99.9% as Mg raw material
And 99.9999% of Zn as the S raw material.
S is used as the Se raw material and has a purity of 99.9999%.
e is used. The n-type ZnSe buffer layer 2 and the n-type Z
_nx Mg _1-x S _y Se _1-y clad layer 3 and n-type ZnS
The doping of the _p- Se _1-p optical waveguide layer 4 with Cl as an n-type impurity is performed using, for example, ZnCl ₂ having a purity of 99.9999% as a dopant, and the p-type ZnS _p Se _1-p optical waveguide layer 6 and the p-type _{Zn x Mg 1-x S y} Se 1-y doping N as a p-type impurity of the cladding layer 7 is performed by irradiating N ₂ plasma generated by, for example, electron cyclotron resonance (ECR).

Next, after forming the p-type _{Zn x Mg 1-x S y} Se 1-y whole surface insulating layer 8 of the cladding layer 7 to form an opening 8a by removing a prescribed portion of the insulating layer 8 . Next, an Au film is vacuum-deposited on the entire surface to form an Au electrode 9 as a p-side electrode.
After forming the causes ohmic contact with the Au electrode 9 on the p-type _{Zn x Mg 1-x S y} Se 1-y cladding layer 7 by performing alloying process. On the other hand, on the back surface of the n-type GaAs substrate 1, an In electrode 10 is formed as an n-side electrode.

After that, the n-type GaAs substrate 1 on which the laser structure is formed is cleaved into, for example, a bar to form a cavity end face, and the bar is cleaved into chips.
Perform packaging.

According to the first embodiment, n-type Zn _x Mg
_{1-x S y Se 1-} y cladding layer 3, n-type ZnS _p Se _1-p
Optical waveguide layer _{4, Zn 1-z Cd z} Se active layer 5 is strained layer, p-type ZnS _p Se _1-p optical waveguide layer 6 and the p-type Zn _x M
Since the semiconductor laser is configured using the g _1-x S _y Se _1-y cladding layer 7, blue light emission capable of oscillating at a wavelength of about 498 nm at room temperature using a ZnMgSSe-based compound semiconductor as a material of the cladding layer is provided. Semiconductor laser can be realized.

The semiconductor laser according to the first embodiment has an n-type Zn _x Mg ₁ -xS _y Se _{1 -y} cladding layer 3.
n-type ZnS _p Se _1-p optical waveguide layer 4, Zn _1-z Cd _z Se
Active layer 5, p-type ZnS _p Se _1-p optical waveguide layer 6, and p-type Z
consisting _{n x Mg 1-x S y} Se 1-y cladding layer 7, the so-called SCH (Separated Confinement Heterostructure)
Due to its structure, it can be used for normal DH (Double Heterostruc
ture) The life characteristics and the like can be improved as compared with a semiconductor laser having a structure.

Next, a semiconductor laser according to a second embodiment of the present invention will be described.

As shown in FIG. 2, in the semiconductor laser according to the second embodiment, in the semiconductor laser according to the first embodiment, n-type ZnS _p Se _1-p is used as an optical waveguide layer.
While the optical waveguide layer 4 and the p-type ZnS _p Se _1-p optical waveguide layer 6 are used, the n-type Zn _p Mg is used as the optical waveguide layer.
_{1-p S q Se 1-} q optical waveguide layer 11 and the p-type Zn _p Mg _1-p
An S _q Se _1-q optical waveguide layer 12 is used. Other configurations are the same as those of the semiconductor laser according to the first embodiment.

In this case, n-type Zn _x Mg _1-x S _y Se
_1-y clad layer 3 and p-type Zn _x Mg _1-x S _y Se _1-y
The Zn composition ratio x of the cladding layer 7 is, for example, 0.92, the S composition ratio y is, for example, 0.15, and the band gap E _{g at} that time is about 2.94 eV. Also, n-type Zn _p Mg
_{1-p S q Se 1-} q optical waveguide layer 11 and the p-type Zn _p Mg _1-p
The Zn composition ratio p of the S _q Se _1-q optical waveguide layer 12 is, for example, 0.1.
96, the S composition ratio q is, for example, 0.11, and the band gap E _{g at} that time is about 2.89 eV. further,
The Cd composition ratio z of the Zn ₁ -z Cd _z Se active layer 5 is, for example, 0.12, and the band gap E _{g at} that time is about 2.64 eV. In this case, the Zn _1-z Cd _z Se active layer 5 and the n-type Zn _p Mg _1-p S _q Se _1-q optical waveguide layer 11
The difference in band gap E _g between the p-type Zn _p Mg _1-p S _q Se _1-q optical waveguide layer 12 is 0.25 eV.

The method of manufacturing a semiconductor laser according to the second embodiment is the same as the method of manufacturing a semiconductor laser according to the first embodiment, and a description thereof will be omitted.

According to the second embodiment, n-type Zn _x Mg
_{1-x S y Se 1-} y cladding layer 3, n-type Zn _p Mg _1-p S
_q Se _1-q optical waveguide layer 11, Zn _1-z Cd as strain layer
a semiconductor laser using a _z Se active layer 5, p-type _{Zn p Mg 1-p S q} Se 1-q optical waveguide layer 12 and the p-type _{Zn x Mg 1-x S y} Se 1-y cladding layer 7 is constituted Accordingly, a blue-emitting semiconductor laser that can oscillate at a wavelength of about 485 nm at room temperature using a ZnMgSSe-based compound semiconductor as a material of a cladding layer can be realized.

Next, a semiconductor laser according to a third embodiment of the present invention will be described.

The semiconductor laser according to the third embodiment is
It has the same configuration as the semiconductor laser according to the second embodiment shown in FIG. 2, but has an n-type Zn _x Mg _1-x S _y Se _1-y cladding layer 3, an n-type Zn _p Mg _1-p S _q Se _{1- q} Optical waveguide layer 1
1, Zn _1-z Cd _z Se active layer 5, p-type Zn _p Mg _1-p
S _q Se _1-q optical waveguide layer 12 and the p-type Zn _x Mg _1-x S _y
The composition of each layer of the Se _1-y clad layer 7 is different from the semiconductor laser according to the second embodiment.

That is, in this case, n-type Zn _x Mg _1-x
S _y Se _1-y clad layer 3 and p-type Zn _x Mg _1-x S _y
The Zn composition ratio x of the Se _1-y cladding layer 7 is, for example, 0.9.
The 0 and S composition ratio y is, for example, 0.18, and the band gap E _{g at} that time is about 2.97 eV. The n-type Zn _p Mg _1-p S _q Se _1-q optical waveguide layer 11 and the p-type Zn
_{p Mg 1-p S q Se} 1-q optical waveguide layer 12 of Zn composition ratio p is for example 0.93, S composition ratio q is 0.14 for example,
The band gap E _{g at} that time is about 2.92 eV. Further, the Cd composition ratio z of the Zn ₁ -z Cd _z Se active layer 5 is, for example, 0.10, and the band gap E _{g at} that time is about 2.67 eV. In this case, Zn _1-z Cd
of _z Se active layer 5 and the n-type _{Zn p Mg 1-p S q} Se 1-q optical waveguide layer 11 and the p-type Zn _p Mg _1-p S _q bandgap E _g of Se _1-q optical waveguide layer 12 The difference is 0.25 eV.

The method of manufacturing a semiconductor laser according to the third embodiment is the same as the method of manufacturing a semiconductor laser according to the first embodiment, and will not be described.

According to the third embodiment, ZnMgSSe
A blue-emitting semiconductor laser that can oscillate at a wavelength of about 480 nm at room temperature using a system compound semiconductor as a material of a cladding layer can be realized.

Next, a semiconductor laser according to a fourth embodiment of the present invention will be described.

As shown in FIG. 3, the semiconductor laser according to the fourth embodiment has, for example, an undoped Z as an active layer.
It has the same configuration as the semiconductor laser according to the first embodiment, except that the nSe _z Te _1-z active layer 13 is used. Here, the ZnSe _z Te _{1 -z} active layer 13 is a strained layer.

In this case, n-type Zn _x Mg _1-x S _y Se
_1-y clad layer 3 and p-type Zn _x Mg _1-x S _y Se _1-y
The Zn composition ratio x of the cladding layer 7 is, for example, 0.97, the S composition ratio y is, for example, 0.09, and the band gap E _{g at} that time is about 2.87 eV. Also, n-type ZnS _p S
e _1-p optical waveguide layer 4 and p-type ZnS _p Se _1-p optical waveguide layer 6
Is, for example, 0.06, and the band gap E _{g at} that time is about 2.82 eV. Furthermore, Zn
The Se composition z of the Se _z Te _{1 -z} active layer 13 is, for example, 0.9.
0, and the band gap E _{g at} that time is about 2.5 e
V. In this case, the ZnSe _z Te _1-z active layer 13, the n-type ZnS _p Se _1-p optical waveguide layer 4 and the p-type ZnS _p Se
The difference between the band gap E _g and the _1-p optical waveguide layer 6 is 0.25.
eV.

According to the fourth embodiment, n-type Zn _x Mg
_{1-x S y Se 1-} y cladding layer 3, n-type ZnS _p Se _1-p
Optical waveguide layer 4, ZnSe _z Te _1-z active layer 13, which is a strain layer, p-type ZnS _p Se _1-p optical waveguide layer 6, and p-type Zn _x
Since the semiconductor laser is formed using the Mg _1-x S _y Se _1-y cladding layer 7, a green color capable of lasing at a wavelength of about 511 nm at room temperature using a ZnMgSSe-based compound semiconductor as a material of the cladding layer is provided. A light emitting semiconductor laser can be realized.

Although the embodiments of the present invention have been specifically described above, the present invention is not limited to the above-described embodiments, and various modifications based on the technical idea of the present invention are possible.

For example, in the above four embodiments,
Although the Au electrode 9 is used as the p-side electrode, it is also possible to use an Au / Pd electrode in which a Pd film is used as the lowermost layer and an Au film is stacked thereon as the p-side electrode. Such a p-side electrode using a Pd film as the lowermost layer has an advantage that adhesion to a base is good.

In the above four embodiments, a GaAs substrate is used as a compound semiconductor substrate, but a GaP substrate, for example, may be used as the compound semiconductor substrate.

For example, by setting the Zn composition ratio z of the Zn _{1 -z} Cd _z Se active layer 5 in the first embodiment to 0.5, a semiconductor laser capable of emitting yellow to red light at room temperature can be obtained. Can be realized.

[0050]

As described above, according to the present invention,
A semiconductor laser capable of emitting blue to green light using ZnMgSSe as a material of a cladding layer can be realized.

[Brief description of the drawings]

FIG. 1 is a sectional view showing a semiconductor laser according to a first embodiment of the present invention.

FIG. 2 is a sectional view showing a semiconductor laser according to a second embodiment of the present invention.

FIG. 3 is a sectional view showing a semiconductor laser according to a fourth embodiment of the present invention.

FIG. 4 is a graph showing the results of measuring the relationship between the Zn composition ratio x and the S composition ratio y of Zn _x Mg _1-x S _y Se _1- y and the band gap and lattice constant.

[Explanation of symbols]

1 n-type GaAs substrate 2 n-type ZnSe buffer layer 3 n-type _{Zn x Mg 1-x S y} Se 1-y cladding layer 4 n-type ZnS _p Se _1-p optical waveguide layer 5 Zn _1-z Cd z Se active layer Reference Signs List 6 p-type ZnS _p Se _1-p optical waveguide layer 7 p-type Zn _x Mg _1-x S _y Se _1-y cladding layer 8 insulating layer 9 Au electrode 10 In electrode 11 n-type Zn _p Mg _1-p S _q Se _1-q optical waveguide layer 12 p-type Zn _p Mg _1-p S _q Se _1-q optical waveguide layer 13 ZnSe _z Te _1-z active layer

Continuation of front page (56) References Jpn. J. Appl. Phys. Vol. 31, No. 3B, p. L340-L342 (19 ELECTRONICS LETTE RS Vol. 28, No. 19, p. 1798-1799 (1 Appl. Phys. Lett. Vol. 59, No. 11, p. 1272-1274 (1991 (58) survey) Field (Int.Cl. ⁷ , DB name) H01S 5/00-5/50

Claims (8)

(57) [Claims] 1. A ZnM laminated on a compound semiconductor substrate
a first conductivity type first cladding layer made of gSSe; a first optical waveguide layer made of ZnSSe laminated on the first cladding layer; and a ZnCdSe laminated on the first optical waveguide layer. An active layer comprising: a second optical waveguide layer composed of ZnSSe laminated on the active layer; and a second cladding layer of a second conductivity type composed of ZnMgSSe laminated on the second optical waveguide layer comprising the door, the first cladding layer, said first optical waveguide layer, the second
The optical waveguide layer and the second cladding layer are formed of the compound semiconductor.
Lattice matched to the body substrate and the active layer is strained
A semiconductor laser, which is a layer . 2. A ZnM laminated on a compound semiconductor substrate.
a first conductivity type first cladding layer made of gSSe; a first optical waveguide layer made of ZnMgSSe laminated on the first cladding layer; and a ZnCdSe laminated on the first optical waveguide layer. An active layer composed of ZnMgSSe laminated on the active layer.
And a second conductive type second cladding layer made of ZnMgSSe laminated on the second optical waveguide layer , wherein the first cladding layer and the first optical waveguide layer , The second
The optical waveguide layer and the second cladding layer are formed of the compound semiconductor.
Lattice matched to the body substrate and the active layer is strained
A semiconductor laser, which is a layer . 3. The semiconductor laser according to claim 1, wherein the thickness of said active layer is not more than its critical thickness.
User . 4. A difference in band gap between said first optical waveguide layer and said second optical waveguide layer and said active layer is 0.15e.
The semiconductor laser according to claim 1, wherein the voltage is V or more. 5. ZnM laminated on a compound semiconductor substrate
a first conductivity type first cladding layer made of gSSe; It is composed of ZnSSe laminated on the first cladding layer.
A first optical waveguide layer, It is composed of ZnCdSe laminated on the first optical waveguide layer.
Active layer, Second light composed of ZnSSe laminated on the active layer
A waveguide layer; From ZnMgSSe laminated on the second optical waveguide layer
A second cladding layer of a second conductivity type comprising: The first cladding layer, the first optical waveguide layer, the second
The optical waveguide layer and the second cladding layer are formed of the compound semiconductor.
Lattice matched to the body substrate and the active layer is strained
Layer A light-emitting diode, characterized in that: 6. ZnM laminated on a compound semiconductor substrate
a first conductivity type first cladding layer made of gSSe; ZnMgSSe laminated on the first cladding layer
A first optical waveguide layer comprising: It is composed of ZnCdSe laminated on the first optical waveguide layer.
Active layer, A second layer made of ZnMgSSe laminated on the active layer;
An optical waveguide layer, From ZnMgSSe laminated on the second optical waveguide layer
A second cladding layer of a second conductivity type comprising: The first cladding layer, the first optical waveguide layer, the second
The optical waveguide layer and the second cladding layer are formed of the compound semiconductor.
Lattice matched to the body substrate and the active layer is strained
Layer A light-emitting diode, characterized in that: 7. The method according to claim 1, wherein the thickness of the active layer is less than the critical thickness.
7. A light emitting die according to claim 5, wherein
Aether. 8. The first optical waveguide layer and the second optical waveguide.
The difference in band gap between the wave layer and the active layer is 0.15 e
V is not less than V.
A light emitting diode according to claim 1.