JP3262623B2 - 減圧処理方法及び装置 - Google Patents

減圧処理方法及び装置

Info

Publication number
JP3262623B2
JP3262623B2 JP05519493A JP5519493A JP3262623B2 JP 3262623 B2 JP3262623 B2 JP 3262623B2 JP 05519493 A JP05519493 A JP 05519493A JP 5519493 A JP5519493 A JP 5519493A JP 3262623 B2 JP3262623 B2 JP 3262623B2
Authority
JP
Japan
Prior art keywords
exhaust
valve
exhaust passage
passage
processing unit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP05519493A
Other languages
English (en)
Japanese (ja)
Other versions
JPH06244125A (ja
Inventor
勝伸 宮城
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Electron Ltd
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Priority to JP05519493A priority Critical patent/JP3262623B2/ja
Priority to TW083101058A priority patent/TW301018B/zh
Priority to US08/197,873 priority patent/US5415585A/en
Priority to KR1019940002850A priority patent/KR100251876B1/ko
Publication of JPH06244125A publication Critical patent/JPH06244125A/ja
Application granted granted Critical
Publication of JP3262623B2 publication Critical patent/JP3262623B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45561—Gas plumbing upstream of the reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4412—Details relating to the exhausts, e.g. pumps, filters, scrubbers, particle traps
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/14—Feed and outlet means for the gases; Modifying the flow of the reactive gases
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F27—FURNACES; KILNS; OVENS; RETORTS
    • F27D—DETAILS OR ACCESSORIES OF FURNACES, KILNS, OVENS OR RETORTS, IN SO FAR AS THEY ARE OF KINDS OCCURRING IN MORE THAN ONE KIND OF FURNACE
    • F27D7/00—Forming, maintaining or circulating atmospheres in heating chambers
    • F27D7/06—Forming or maintaining special atmospheres or vacuum within heating chambers

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • General Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Formation Of Insulating Films (AREA)
JP05519493A 1993-02-17 1993-02-17 減圧処理方法及び装置 Expired - Fee Related JP3262623B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP05519493A JP3262623B2 (ja) 1993-02-17 1993-02-17 減圧処理方法及び装置
TW083101058A TW301018B (https=) 1993-02-17 1994-02-08
US08/197,873 US5415585A (en) 1993-02-17 1994-02-17 Decompression apparatus
KR1019940002850A KR100251876B1 (ko) 1993-02-17 1994-02-17 감압 처리장치

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP05519493A JP3262623B2 (ja) 1993-02-17 1993-02-17 減圧処理方法及び装置

Publications (2)

Publication Number Publication Date
JPH06244125A JPH06244125A (ja) 1994-09-02
JP3262623B2 true JP3262623B2 (ja) 2002-03-04

Family

ID=12991883

Family Applications (1)

Application Number Title Priority Date Filing Date
JP05519493A Expired - Fee Related JP3262623B2 (ja) 1993-02-17 1993-02-17 減圧処理方法及び装置

Country Status (4)

Country Link
US (1) US5415585A (https=)
JP (1) JP3262623B2 (https=)
KR (1) KR100251876B1 (https=)
TW (1) TW301018B (https=)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5900047A (en) * 1997-11-26 1999-05-04 Sony Corporation Exhaust system for a semiconductor etcher that utilizes corrosive gas
KR100275738B1 (ko) * 1998-08-07 2000-12-15 윤종용 원자층 증착법을 이용한 박막 제조방법
DE19906224B4 (de) * 1999-02-15 2006-05-24 Infineon Technologies Ag Abzugsvorrichtung
JP3543949B2 (ja) * 1999-11-09 2004-07-21 東京エレクトロン株式会社 熱処理装置
JP4038352B2 (ja) * 2001-08-24 2008-01-23 株式会社日立産機システム クリーンルーム
US20070012402A1 (en) * 2003-07-08 2007-01-18 Sundew Technologies, Llc Apparatus and method for downstream pressure control and sub-atmospheric reactive gas abatement
JP4371425B2 (ja) * 2004-03-29 2009-11-25 株式会社日立国際電気 半導体装置の製造方法及び基板処理装置
KR20060056709A (ko) * 2004-11-22 2006-05-25 삼성전자주식회사 도어 입구에 에어 커튼을 가지는 반도체 제조 장비
JP4675388B2 (ja) * 2008-03-06 2011-04-20 東京エレクトロン株式会社 被処理体の処理装置
JP4934117B2 (ja) * 2008-09-03 2012-05-16 東京エレクトロン株式会社 ガス処理装置、ガス処理方法、および記憶媒体
JP5276679B2 (ja) * 2011-02-01 2013-08-28 東京エレクトロン株式会社 成膜装置
JP5921168B2 (ja) * 2011-11-29 2016-05-24 株式会社日立国際電気 基板処理装置
JPWO2014157071A1 (ja) * 2013-03-25 2017-02-16 株式会社日立国際電気 基板処理装置、半導体装置の製造方法及び基板処理方法
JP6667412B2 (ja) * 2016-09-30 2020-03-18 東京エレクトロン株式会社 基板処理装置
US11846025B2 (en) 2019-08-06 2023-12-19 Kokusai Electric Corporation Substrate processing apparatus capable of adjusting inner pressure of process chamber thereof and method therefor
KR102803036B1 (ko) * 2019-08-29 2025-05-12 삼성전자주식회사 플라즈마 표면처리 장치 및 이를 구비하는 기판 처리 시스템과 이를 이용한 플라즈마 표면처리 방법
WO2021053972A1 (ja) * 2019-09-19 2021-03-25 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ 基板処理装置、半導体装置の製造方法、プログラム、記録媒体および排ガス処理システム

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0114000Y2 (https=) * 1987-01-30 1989-04-24
JPH02273921A (ja) * 1989-04-17 1990-11-08 Tokyo Electron Ltd 真空処理装置及びプラズマ処理方法
JP3149206B2 (ja) * 1991-05-30 2001-03-26 東京エレクトロン株式会社 熱処理装置

Also Published As

Publication number Publication date
US5415585A (en) 1995-05-16
JPH06244125A (ja) 1994-09-02
TW301018B (https=) 1997-03-21
KR100251876B1 (ko) 2000-04-15

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