JP3227757B2 - Method for repairing semiconductor device - Google Patents

Method for repairing semiconductor device

Info

Publication number
JP3227757B2
JP3227757B2 JP3340892A JP3340892A JP3227757B2 JP 3227757 B2 JP3227757 B2 JP 3227757B2 JP 3340892 A JP3340892 A JP 3340892A JP 3340892 A JP3340892 A JP 3340892A JP 3227757 B2 JP3227757 B2 JP 3227757B2
Authority
JP
Japan
Prior art keywords
wiring
semiconductor
insulating film
conductive
signal line
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP3340892A
Other languages
Japanese (ja)
Other versions
JPH05232496A (en
Inventor
隆 下林
Original Assignee
セイコーエプソン株式会社
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by セイコーエプソン株式会社 filed Critical セイコーエプソン株式会社
Priority to JP3340892A priority Critical patent/JP3227757B2/en
Publication of JPH05232496A publication Critical patent/JPH05232496A/en
Application granted granted Critical
Publication of JP3227757B2 publication Critical patent/JP3227757B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION
【0001】[0001]
【産業上の利用分野】本発明は、集積回路、液晶表示装
置等に用いられる半導体装置の配線の断線の修復方法に
関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for repairing a disconnection of a wiring of a semiconductor device used for an integrated circuit, a liquid crystal display device or the like.
【0002】[0002]
【従来の技術】従来、集積回路では、絶縁膜下の配線が
断線していた場合、該部分を含む単位素子は不良品とし
て排除されていた。集積回路の場合、1枚の素子基板か
ら多数の素子が得られることから、1枚の素子基板中に
いくつかの不良素子があっても全体の素子の不良にはつ
ながらず、特に該現象が問題になることはなかった。
2. Description of the Related Art Conventionally, in an integrated circuit, when a wiring under an insulating film is disconnected, a unit element including the portion is excluded as a defective product. In the case of an integrated circuit, since a large number of elements can be obtained from one element substrate, even if there are several defective elements in one element substrate, it does not lead to the failure of the entire element. There was no problem.
【0003】しかし、液晶表示装置の場合、一つの表示
エリアの中に、1箇所でも該不良があれば、商品として
の価値はなくなってしまう。また集積回路と比較し、切
り出し単位の素子の面積が格段に大きいため、該不良の
発生頻度は非常に高い。そのため従来は、図6に示すよ
う、該不良の箇所を素子基板の外部に設置した配線で結
線することで修正していた。具体的には、断線している
信号線601の修正用端子602と、その近傍の中継部
分603との間をワイヤ・ボンディングを用いて接続
し、さらに中継部分603と駆動用素子604の出力端
子605の間を半田付けを用いて配線する。ここで、6
06は液晶表示装置、607はワイヤ・ボンディングに
よる配線、608は半田付けによる配線である。その修
正作業は人手を用いた作業で行なわれるため、量産に耐
えられるような手法で修正を行なうことは不可能だっ
た。
However, in the case of a liquid crystal display device, if there is even one defect in one display area, the value as a product is lost. Further, as compared with an integrated circuit, since the area of an element in a cutout unit is extremely large, the frequency of occurrence of the defect is extremely high. For this reason, conventionally, as shown in FIG. 6, the defective portion has been corrected by connecting the wiring with a wiring provided outside the element substrate. Specifically, the connection between the repair terminal 602 of the disconnected signal line 601 and the relay portion 603 in the vicinity thereof is connected by wire bonding, and further, the relay portion 603 and the output terminal of the driving element 604 are connected. Wiring is performed between 605 using soldering. Where 6
Reference numeral 06 denotes a liquid crystal display device, 607 denotes wiring by wire bonding, and 608 denotes wiring by soldering. Since the correction work is performed manually, it was impossible to perform the correction using a method that can withstand mass production.
【0004】[0004]
【発明が解決しようとする課題】本発明は、従来困難で
あった、半導体装置の絶縁膜下にある配線の断線箇所を
修復する方法を提供し、かつ該配線の信頼性を向上させ
る手法を提供するものである。
SUMMARY OF THE INVENTION The present invention provides a method for repairing a disconnection of a wiring under an insulating film of a semiconductor device, which has been difficult in the past, and a method for improving the reliability of the wiring. To provide.
【0005】[0005]
【課題を解決するための手段】本発明は、半導体装置を
構成する絶縁膜下にある配線の断線箇所を修復する半導
体装置の修正方法であって、前記配線の断線箇所を挟ん
で両側の配線及び前記配線上の絶縁膜に穴あけを施して
開口領域を形成する工程と、前記開口領域内の前記配線
の一部を露出するように前記開口領域内の絶縁膜を部分
的に除去する工程と、前記開口領域内の少なくとも前記
配線の一部を覆うように導電性部材を形成する工程と、
前記配線の断線箇所を挟んで両側に形成された前記開口
領域内の前記導電性部材を電気的に接続するように前記
断線箇所を挟んで両側の前記配線及び配線上の絶縁膜上
に導電膜を形成する工程とを有することを特徴とする。
SUMMARY OF THE INVENTION The present invention relates to a method of repairing a broken wire portion of a wiring under an insulating film constituting a semiconductor device. Forming a hole in the insulating film on the wiring to form an opening region; and partially removing the insulating film in the opening region so as to expose a part of the wiring in the opening region. Forming a conductive member so as to cover at least a part of the wiring in the opening region;
A conductive film is formed on the wiring and the insulating film on the wiring on both sides of the disconnection portion so as to electrically connect the conductive members in the opening regions formed on both sides of the disconnection portion of the wiring. And a step of forming
【0006】[0006]
【0007】[0007]
【実施例】図1は、本発明による半導体装置の修正方法
の一例を示す平面図である。
FIG. 1 is a plan view showing an example of a method for repairing a semiconductor device according to the present invention.
【0008】ガラス基板101上に、選択信号線10
2、画像信号線103、薄膜トランジスタ104、画素
電極105が設置されており、さらに全体を絶縁膜であ
る二酸化シリコン薄膜106がおおっている。今、選択
信号線102の一部に、断線箇所107がある。選択信
号線102の断線箇所107の両端の部分にYLFレー
ザーを用いて2箇所穴あけを行ない、穴あけ部108を
作製した。2箇所の穴あけ部108の上に、導電性のあ
る金属コバルト薄膜を、光CVD法を用いて円盤状に付
着させて円盤状導電領域109を2箇所作製し、さらに
両円盤状導電領域109間を接続するように金属コバル
ト薄膜を線状に付着させて線状導電領域110を作製し
た。
[0008] On the glass substrate 101, select signal lines 10
2. An image signal line 103, a thin film transistor 104, and a pixel electrode 105 are provided, and the whole is covered with a silicon dioxide thin film 106 as an insulating film. Now, there is a disconnection portion 107 in a part of the selection signal line 102. Two holes were drilled at both ends of the disconnection portion 107 of the selection signal line 102 by using a YLF laser to form a drilled portion 108. On the two drilled portions 108, a conductive metal thin film is deposited in a disk shape by using a photo-CVD method to form two disk-shaped conductive regions 109, and further, between the two disk-shaped conductive regions 109. A linear conductive region 110 was formed by depositing a metallic cobalt thin film linearly so as to connect them.
【0009】図2は、図1のA−B間の断面構造を示す
図である。
FIG. 2 is a diagram showing a cross-sectional structure between AB in FIG.
【0010】ガラス基板101上の選択信号線102の
穴あけ部108は、YLFレーザーの出力を最適化する
ことにより、図示のように2段階で穴あけされる。すな
わち、選択信号線102が小さく穴あけされ、二酸化シ
リコン薄膜106がそれより大きく穴あけされる。その
ため、その部分に付着された円盤状導電領域109は、
選択信号線102の小さく穴あけされた部分の断面と、
大きく穴あけされた部分と小さく穴あけされた部分の差
の部分の領域の表面との間で電気的接続がとられる。従
って、本修正法の成功の可否には、この部分の導電膜の
膜厚が大きく関与する。
The drilling portion 108 of the selection signal line 102 on the glass substrate 101 is drilled in two stages as shown by optimizing the output of the YLF laser. That is, the selection signal line 102 is drilled smaller and the silicon dioxide thin film 106 is drilled larger. Therefore, the disc-shaped conductive region 109 attached to that portion is
A cross section of a small perforated portion of the selection signal line 102;
An electrical connection is made between the surface of the region of the difference between the large perforated portion and the small perforated portion. Therefore, the success or failure of the present correction method largely depends on the thickness of the conductive film in this portion.
【0011】図3は、本発明により半導体装置の修正を
行なう際、絶縁膜に穴あけした部分での導電性薄膜の膜
厚を変えた場合の、修正後工程での該修正部の接続率の
変化を示す図である。
FIG. 3 shows the connection ratio of the repaired portion in the post-repair process when the thickness of the conductive thin film in the portion formed in the insulating film is changed when the semiconductor device is repaired according to the present invention. It is a figure showing a change.
【0012】絶縁膜に穴あけした部分での導電性薄膜の
膜厚が厚いときは、修正後工程を経ても、修正部接続率
の劣化はほとんどない。該膜厚が薄くなるにつれ、修正
後工程を経る毎の修正部接続率の劣化は顕著になること
が判る。なおここで、修正後工程とは、修正後に行なわ
れる、洗浄工程、ラビング工程、液晶封入工程、パネル
組立作業、駆動素子実装作業等をさす。
[0012] When the thickness of the conductive thin film at the portion where the insulating film is perforated is large, there is almost no deterioration in the connection ratio of the repaired portion even after the repairing process. It can be seen that as the film thickness becomes thinner, the deterioration of the connection ratio of the repair portion every time the post-correction process is performed becomes remarkable. Here, the post-correction step means a cleaning step, a rubbing step, a liquid crystal enclosing step, a panel assembling operation, a driving element mounting operation, and the like, which are performed after the correction.
【0013】図4は、本発明による半導体装置の修正方
法の一例を示す平面図である。
FIG. 4 is a plan view showing an example of a method for repairing a semiconductor device according to the present invention.
【0014】ガラス基板401上に、選択信号線40
2、画像信号線403、薄膜トランジスタ404、画素
電極405が設置されており、さらに全体を絶縁膜であ
る二酸化シリコン薄膜406がおおっている。今、選択
信号線402の一部に、断線箇所407がある。選択信
号線402の断線箇所407の両端の部分にYLFレー
ザーを四角の形状を走査するよう照射することにより絶
縁膜を四角く剥離し、二酸化シリコンの剥離部408を
作製した。2箇所の二酸化シリコンの剥離部408の上
に、両者を結ぶような形状で、導電性のある金属コバル
ト薄膜を、光CVD法を用いて付着させて導電領域40
9を作製した。
A selection signal line 40 is provided on a glass substrate 401.
2. An image signal line 403, a thin film transistor 404, and a pixel electrode 405 are provided, and the whole is covered with a silicon dioxide thin film 406 which is an insulating film. Now, there is a break 407 in a part of the selection signal line 402. The insulating film was peeled off square by irradiating the YLF laser so as to scan a square shape on both ends of the disconnection portion 407 of the selection signal line 402, thereby forming a peeled portion 408 of silicon dioxide. A conductive metal thin film having a shape such as to connect the silicon dioxide peeling portions 408 is attached to the two silicon dioxide peeling portions 408 by using a photo CVD method to form a conductive region 40.
9 was produced.
【0015】図5は、図4のC−D間の断面構造を示す
図である。
FIG. 5 is a diagram showing a cross-sectional structure taken along the line CD of FIG.
【0016】ガラス基板401上の選択信号線402の
二酸化シリコンの剥離部408は、YLFレーザーの出
力を最適化することにより、図示のように選択的に二酸
化シリコン薄膜406のみが剥離される。そのため、そ
の部分に付着された導電領域409は、選択信号線40
2の剥離された部分の表面との間で電気的接続がとられ
る。
The silicon dioxide stripping portion 408 of the selection signal line 402 on the glass substrate 401 is selectively stripped of only the silicon dioxide thin film 406 as shown in the figure by optimizing the output of the YLF laser. Therefore, the conductive region 409 attached to that portion is
An electrical connection is made between the surfaces of the two stripped parts.
【0017】[0017]
【発明の効果】本発明による手法を用いることにより、
従来困難であった、半導体装置の絶縁膜下にある配線の
断線箇所を修復することが可能になり、かつ該配線の信
頼性を向上させる手法を提供することができた。
By using the method according to the present invention,
It has become possible to repair a broken wire portion under an insulating film of a semiconductor device, which has been difficult in the past, and to provide a method of improving the reliability of the wiring.
【図面の簡単な説明】[Brief description of the drawings]
【図1】 本発明による半導体装置の修正方法の一例を
示す平面図。
FIG. 1 is a plan view showing an example of a method for repairing a semiconductor device according to the present invention.
【図2】 図1のA−B間の断面構造を示す図。FIG. 2 is a view showing a cross-sectional structure between AB in FIG. 1;
【図3】 本発明により半導体装置の修正を行なう際、
絶縁膜に穴あけした部分での導電性薄膜の膜厚を変えた
場合の、修正後工程での該修正部の接続率の変化を示す
図。
FIG. 3 illustrates a modification of a semiconductor device according to the present invention.
FIG. 9 is a diagram showing a change in the connection ratio of the repaired part in a post-correction step when the thickness of the conductive thin film in the portion formed in the insulating film is changed.
【図4】 本発明による半導体装置の修正方法の一例を
示す平面図。
FIG. 4 is a plan view showing an example of a method for repairing a semiconductor device according to the present invention.
【図5】 図4のC−D間の断面構造を示す図。FIG. 5 is a view showing a cross-sectional structure taken along a line CD of FIG. 4;
【図6】 従来の手法による、半導体装置の修正方法を
示す図。
FIG. 6 is a diagram showing a method of repairing a semiconductor device according to a conventional method.
【符号の説明】[Explanation of symbols]
101 ガラス基板 102 選択信号線 103 画像信号線 104 薄膜トランジスタ 105 画素電極 106 二酸化シリコン 107 断線箇所 108 穴あけ部 109 円盤状導電領域 110 線状導電領域 401 ガラス基板 402 選択信号線 403 画像信号線 404 薄膜トランジスタ 405 画素電極 406 二酸化シリコン薄膜 407 断線箇所 408 二酸化シリコンの剥離部 409 導電領域 601 断線している信号線 602 修正用端子 603 中継部分 604 駆動用素子 605 駆動用素子の出力端子 606 液晶表示装置 607 ワイヤ・ボンディングによる配線 608 半田付けによる配線 DESCRIPTION OF SYMBOLS 101 Glass substrate 102 Selection signal line 103 Image signal line 104 Thin film transistor 105 Pixel electrode 106 Silicon dioxide 107 Disconnection location 108 Drilled part 109 Disc-shaped conductive region 110 Linear conductive region 401 Glass substrate 402 Selection signal line 403 Image signal line 404 Thin film transistor 405 Pixel Electrode 406 Silicon dioxide thin film 407 Disconnection location 408 Silicon dioxide stripped part 409 Conductive area 601 Disconnected signal line 602 Correction terminal 603 Relay part 604 Driving element 605 Driving element output terminal 606 Liquid crystal display 607 Wire bonding Wiring 608 Wiring by soldering
───────────────────────────────────────────────────── フロントページの続き (58)調査した分野(Int.Cl.7,DB名) G02F 1/1368 G02F 1/1343 G02F 1/1345 H01L 27/12 H01L 29/786 ──────────────────────────────────────────────────続 き Continued on the front page (58) Field surveyed (Int.Cl. 7 , DB name) G02F 1/1368 G02F 1/1343 G02F 1/1345 H01L 27/12 H01L 29/786

Claims (1)

    (57)【特許請求の範囲】(57) [Claims]
  1. 【請求項1】半導体装置を構成する絶縁膜下にある配線
    の断線箇所を修復する半導体装置の修正方法であって、
    前記配線の断線箇所を挟んで両側の配線及び前記配線上
    の絶縁膜に穴あけを施して開口領域を形成する工程と、
    前記開口領域内の前記配線の一部を露出するように前記
    開口領域内の絶縁膜を部分的に除去する工程と、前記開
    口領域内の少なくとも前記配線の一部を覆うように導電
    性部材を形成する工程と、前記配線の断線箇所を挟んで
    両側に形成された前記開口領域内の前記導電性部材を電
    気的に接続するように前記断線箇所を挟んで両側の前記
    配線及び配線上の絶縁膜上に導電膜を形成する工程とを
    有することを特徴とする半導体装置の修正方法。
    1. A method of repairing a semiconductor device for repairing a broken portion of a wiring under an insulating film constituting the semiconductor device, comprising:
    Forming an opening region by making holes in the wiring on both sides of the broken portion of the wiring and an insulating film on the wiring,
    A step of partially removing an insulating film in the opening region so as to expose a part of the wiring in the opening region, and a conductive member so as to cover at least a part of the wiring in the opening region. Forming the wiring, and insulating the wiring and the wiring on both sides of the disconnection location so as to electrically connect the conductive members in the opening regions formed on both sides of the disconnection location of the wiring. Forming a conductive film on the film.
JP3340892A 1992-02-20 1992-02-20 Method for repairing semiconductor device Expired - Lifetime JP3227757B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3340892A JP3227757B2 (en) 1992-02-20 1992-02-20 Method for repairing semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3340892A JP3227757B2 (en) 1992-02-20 1992-02-20 Method for repairing semiconductor device

Publications (2)

Publication Number Publication Date
JPH05232496A JPH05232496A (en) 1993-09-10
JP3227757B2 true JP3227757B2 (en) 2001-11-12

Family

ID=12385772

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3340892A Expired - Lifetime JP3227757B2 (en) 1992-02-20 1992-02-20 Method for repairing semiconductor device

Country Status (1)

Country Link
JP (1) JP3227757B2 (en)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100474002B1 (en) * 1998-04-28 2005-07-18 엘지.필립스 엘시디 주식회사 Method and structure for repair of open pad of liquid crystal display
CN104375347B (en) * 2014-12-04 2017-06-06 合肥鑫晟光电科技有限公司 Array base palte, patch, display panel and the method for repairing array base palte
JP6645160B2 (en) 2015-12-11 2020-02-12 三菱電機株式会社 Display device substrate and method of manufacturing the same, and display device and method of manufacturing the same
JP6739198B2 (en) 2016-03-18 2020-08-12 三菱電機株式会社 Display device array substrate, display device, display device array substrate manufacturing method, and display device manufacturing method

Also Published As

Publication number Publication date
JPH05232496A (en) 1993-09-10

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