JP3147157B2 - Electronic circuit device including a semiconductor element - Google Patents

Electronic circuit device including a semiconductor element

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Publication number
JP3147157B2
JP3147157B2 JP35233297A JP35233297A JP3147157B2 JP 3147157 B2 JP3147157 B2 JP 3147157B2 JP 35233297 A JP35233297 A JP 35233297A JP 35233297 A JP35233297 A JP 35233297A JP 3147157 B2 JP3147157 B2 JP 3147157B2
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JP
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Prior art keywords
resin layer
semiconductor element
protective resin
circuit board
protective
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
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JP35233297A
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Japanese (ja)
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JPH11176882A (en )
Inventor
茂雄 吉崎
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サンケン電気株式会社
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    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10Bump connectors; Manufacturing methods related thereto
    • H01L2224/15Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10Details of semiconductor or other solid state devices to be connected
    • H01L2924/11Device type
    • H01L2924/13Discrete devices, e.g. 3 terminal devices
    • H01L2924/1301Thyristor

Description

【発明の詳細な説明】 DETAILED DESCRIPTION OF THE INVENTION

【0001】 [0001]

【産業上の利用分野】本発明はバンプ電極(突起電極) The present invention bump electrode BACKGROUND OF THE (protruding electrode)
を有する半導体素子を含む電子回路装置に関する。 An electronic circuit device including a semiconductor device having a.

【0002】 [0002]

【従来の技術】図1に示すようにバンプ電極1を備えた半導体素子2を回路基板3上に搭載した電子回路装置は公知である。 An electronic circuit device mounting the Related Art The semiconductor element 2 having a bump electrode 1 as shown in FIG. 1 on the circuit board 3 are known. 半導体素子2はバンプ電極1を回路基板3 The semiconductor element 2 circuit substrate 3 the bump electrodes 1
の配線導体4に半田付けすることによって取付けられ、 It attached by soldering to the wiring conductor 4,
外部から水分等の異物が侵入することを防止するために第1及び第2の保護樹脂層5、6によって被覆されている。 It is covered by the first and second protective resin layer 5, 6 in order to prevent the foreign matter such as water from the outside from entering. 第1の保護樹脂層5はシリコーンゲルから成り、バンプ電極1を被覆し且つ半導体素子2の本体部2aの下面と回路基板3との間を充填するように設けられている。 The first protective resin layer 5 made of silicone gel, is provided to fill the space between the lower surface and the circuit board 3 of the main body portion 2a of the bump electrodes 1 were coated and semiconductor element 2. 第2の保護樹脂層6はシリコーンラバーから成り、 The second protective resin layer 6 is made of silicone rubber,
半導体素子2の本体部2aの上面及び第1の保護樹脂層5を被覆すると共に高集積化のために半導体素子2の近傍に配置された別の回路素子に接続された金属細線8の接続部分も被覆するように形成されている。 Top and the connecting portion of the first protective resin layer 5 thin metal wire 8 connected to another circuit element disposed in the vicinity of the semiconductor element 2 to the high integration with covering the body portion 2a of the semiconductor element 2 It is formed so as also to cover. 回路基板3 Circuit board 3
は上面に金属細線接続用の配線導体9を有し、下面に金属層10を有する。 Has a wiring conductor 9 for the metal thin wire connected to the top surface, it has a metal layer 10 on the lower surface. なお、半導体素子2の下面を含めて全体を被覆するようにシリコーンラバーから成る第2の保護樹脂層6を設けないのは、半導体素子2の下面にシリコーンラバーを注入すると、シリコーンラバーは比較的大きな弾性を有するために半導体素子2を上方に持ち上げてバンプ電極1を破断するおそれがあるためである。 Incidentally, not providing the second protective resin layer 6 made of silicone rubber so as to cover the whole, including the lower surface of the semiconductor element 2, is injected silicone rubber on the lower surface of the semiconductor element 2, the silicone rubber is relatively there is a possibility to break the bump electrodes 1 lift the semiconductor element 2 upward in order to have greater elasticity. また、半導体素子2の上面も含めて全体を被覆するようにシリコーンゲルから成る第1の保護樹脂層5を設けないのは、シリコーンゲルはシリコーンラバーに比べて粘度が十分に小さいため、シリコーンゲルのみでは半導体素子2の全体を良好に被覆することができないためである。 Also, since not provided with the first protective resin layer 5 made of silicone gel so as to cover the whole, including the upper surface of the semiconductor element 2, the silicone gel is sufficiently small viscosity as compared to the silicone rubber, silicone gel alone is due to the inability to satisfactorily cover the whole semiconductor element 2.

【0003】 [0003]

【発明が解決しようとする課題】ところで、図1に示す電子回路装置ではバンプ電極1にクラックが発生し断線に至ることがあった。 [SUMMARY OF THE INVENTION Incidentally, a crack was sometimes lead to occur disconnection bump electrode 1 in the electronic circuit device shown in FIG. これはシリコ−ンラバ−の線膨張係数が大きいことに起因すると考えられる。 This silicone - believed to be due to the linear expansion coefficient of the large - Nraba. 即ち、シリコ−ンラバ−から成る第2の保護樹脂層6は回路基板3 That is, silico - Nraba - second protective resin layer 6 made of the circuit board 3
と樹脂封止体(図示せず)とで囲まれて密閉された状態にあるため、樹脂封止体が例えば温度サイクル試験等で高温(125℃以上)になることで第2の保護樹脂層6 And because of the resin sealing body in the hermetically sealed state is surrounded by the (not shown), a second protective resin layer by a high temperature (125 ° C. or higher) with a resin sealing body, for example, a temperature cycle test, etc. 6
が膨張すると、回路基板3と第2の保護樹脂層6とで挟まれた半導体素子2に機械的応力が加わる。 There When inflated, the mechanical stress is applied to the semiconductor element 2 sandwiched between the circuit board 3 and the second protective resin layer 6. このため、 For this reason,
バンプ電極1が押しつぶされる。 Bump electrode 1 is crushed. 一方、樹脂封止体が低温状態に置かれると、第2の保護樹脂層6が収縮し、半導体素子2の保護樹脂層6による押さえ付けが解かれる。 On the other hand, when the resin sealing body is placed in a low temperature state, the second protective resin layer 6 is contracted, pressing with by the protective resin layer 6 of the semiconductor element 2 is released. この押さえ付けと、その解除との繰り返しによってバンプ電極1にクラックが発生し、最終的には断線に至る。 The hold-down and a crack occurs in the bump electrodes 1 by repetition of its release, ultimately leading to breakage. 半導体素子に加わる機械的応力を開放するために、 To release the mechanical stress applied to the semiconductor element,
樹脂封止体にその上面から第2の保護樹脂層6に通じる孔を形成することが考えられる。 It is conceivable to form a hole communicating from an upper surface to a resin sealing member to a second protective resin layer 6. この構造によれば、熱膨張時に第2の保護樹脂層6がこの孔に侵入するので、 According to this structure, since the second protective resin layer 6 penetrates into the hole at the time of thermal expansion,
半導体素子2に加わる機械的応力を低減することができる。 It is possible to reduce the mechanical stress applied to the semiconductor element 2. しかし、この構造では孔を通じて樹脂封止体の内部に湿気等を取り込み易くなるため信頼性の点で問題がある。 However, this structure has an internal problem in terms of reliability for easily takes in moisture or the like into the resin sealing body through a hole.

【0004】そこで、本発明は、バンプ電極を有する半導体素子を良好に保護することができると共に耐湿性等にも優れ、電気的特性が長期間にわたって良好に得ることができる電子回路装置を提供することを目的とする。 [0004] Therefore, the present invention is excellent in moisture resistance with a semiconductor device having a bump electrode can be well protected, the electrical characteristics to provide an electronic circuit apparatus capable of obtaining good over a long period of time and an object thereof.

【0005】 [0005]

【課題を解決するための手段】上記課題を解決し、上記目的を達成するための本発明は、バンプ電極を備えた半導体素子と、回路基板と、第1及び第2の保護樹脂層と、樹脂封止体とから成り、前記半導体素子の平板状の本体部は前記バンプ電極によって前記回路基板の配線導体に接続され、前記第1の保護樹脂層は、前記半導体素子の前記バンプ電極を被覆し且つ前記半導体素子の前記本体部の一方の主面と前記回路基板との間を充填するように設けられ、前記第2の保護樹脂層は、前記半導体素子の前記本体部の他方の主面とを被覆するように設けられ、前記樹脂封止体は前記第2の保護樹脂層を介して前記回路基板を覆うように設けられ、前記第1の保護樹脂層は液状エポキシ樹脂に基づいて形成され、前記第2の保護樹脂層はシリコ To solve the above problems SUMMARY OF THE INVENTION The present invention for achieving the above object, a semiconductor device having a bump electrode, and the circuit board, and the first and second protective resin layer, consists of a resin sealing body, plate-like body portion of said semiconductor element is connected to the wiring conductor of the circuit board by the bump electrode, the first protective resin layer, covering the bump electrode of the semiconductor element provided by and to fill the space between the one principal surface and the circuit board of the main portion of the semiconductor device, the second protective resin layer, the other main surface of the main portion of the semiconductor element preparative provided so as to cover the resin sealing body provided so as to cover the circuit substrate through the second protective resin layer, the first protective resin layer is based on liquid epoxy resin formed is, the second protective resin layer is silicon ンラバ−(弾性を有するシリコ− Nraba - (silicone having an elastic -
ン樹脂)から成り、前記第1の保護樹脂層は前記第2の保護樹脂層よりも大きい硬度(かたさ)を有していることを特徴とする電子回路装置に係わるものである。 Made down the resin), the first protective resin layer are those related to the electronic circuit apparatus characterized in that it has a greater hardness (hardness) than the second protective resin layer. なお、本発明において、半導体素子とはトランジスタ、ダイオード、サイリスタ、集積回路、混成集積回路等の半導体を含む全ての素子又は部品を意味する。 In the present invention, a semiconductor device means a transistor, a diode, a thyristor, an integrated circuit, all of the elements or parts, including semiconductors such as hybrid integrated circuits. また、電子回路装置は、半導体集積回路装置、混成集積回路装置、 The electronic circuit device, a semiconductor integrated circuit device, the hybrid integrated circuit device,
複合半導体素子、半導体装置等の種々の回路装置を意味する。 Composite semiconductor device means various circuit devices such as semiconductor devices.

【0006】 [0006]

【発明の作用及び効果】本発明は次の作用及び効果を有する。 [Effect of invention and advantages of the present invention has the following actions and effects. 液状エポキシ樹脂から成る第1の保護樹脂層が半導体素子のバンプ電極を被覆し且つ半導体素子の本体部の一方の主面と回路基板との間を充填しているので、温度サイクルが多数繰り返されてもバンプ電極にクラックが生じて断線することがない。 Since the first protective resin layer made from a liquid epoxy resin is filled between the one main surface and the circuit board of the main body portion of the coated and the semiconductor element bump electrodes of the semiconductor element, repeated temperature cycle number never cracks is disconnected occurs in bump electrodes even. 即ち、液状エポキシから成る第1の保護樹脂層は半導体素子と回路基板の両方に対して良好に密着し、且つシリコンゲルやシリコ−ンラバ−から成る保護樹脂層に比べて硬度及び剛性が大きく半導体素子に対して硬い台座として機能する。 That is, the first protective resin layer made from a liquid epoxy is good adhesion to both the semiconductor device and the circuit board, and silicone gel or silicone - Nraba - hardness and rigidity as compared with the protective resin layer made of a large semiconductor to function as a hard pedestal with respect to the element. このため、第2の樹脂層の熱膨張によって半導体素子に対して下向き(回路基板側に向う方向)の押さえ付けが加わったとき、この応力を第1の保護樹脂層が支持し、バンプ電極に大きな応力(圧縮力)が加わることが阻止される。 Therefore, when joined by pressed downward (direction toward the circuit board side) to the semiconductor device by the thermal expansion of the second resin layer, the stress first protective resin layer is supported, the bump electrode large stress (compressive force) that is applied is prevented. この結果、バンプ電極のクラック及び破断が防止される。 As a result, cracks and breakage of the bump electrodes can be prevented.

【0007】 [0007]

【実施形態及び実施例】次に、図2を参照して本発明の実施例に係わる電子回路装置を説明する。 [Embodiment and Examples] Next, the electronic circuit device according to an embodiment of the present invention with reference to FIG. 図2に示す電子回路装置は混成集積回路であって、図1と同様に金属突起から成るバンプ電極1を有する半導体素子2と例えばセラミックから成る絶縁性回路基板3と電子回路素子7と内部リード細線としての金属細線8とを備えている。 Electronic circuit device shown in FIG. 2 is a hybrid integrated circuit, FIG. 1 and similar insulating circuit board 3 and the electronic circuit element 7 and the inner leads made of a semiconductor element 2, for example, a ceramic having a bump electrode 1 made of metal projection and a metal thin wires 8 as a thin line. 半導体素子2のバンプ電極1は回路基板3上の配線導体4に半田付けされている。 Bump electrode 1 of the semiconductor element 2 is soldered to the wiring conductor 4 on the circuit board 3. 即ち半導体素子2のPN That of the semiconductor element 2 PN
接合等を含む平板状の本体部2aの一方の主面が回路基板3の主面に所定の間隔を有して対向するようにフェースダウンボンディングされている。 One main surface of a flat body portion 2a including a junction or the like is bonded face down to face with a predetermined gap on the main surface of the circuit board 3. 例えば直径200μ For example, a diameter of 200μ
mのAlワイヤから成る金属細線8の一端は半導体素子2の近傍に配置された回路基板3上の配線導体9に周知のワイヤボンディング法によってステッチボンディングされ、この他端は電子回路素子7の上面の電極にワイヤボンディング法によってステッチボンディングされている。 One end of the metal thin wires 8 made of Al wires m is stitch-bonded by the well-known wire bonding method to the wiring conductor 9 on the circuit board 3 disposed in the vicinity of the semiconductor element 2, the other end top surface of the electronic circuit element 7 It is stitch bonded by wire bonding method of the electrodes.

【0008】この実施例においても、バンプ電極1を囲み且つ半導体素子2の本体部2aと回路基板3との間を充填するように第1の保護樹脂層5aが設けられ、また、半導体素子2の本体部2aの上面と第1の保護樹脂層5aと少なくとも金属細線8の配線導体9に対する接続部を被覆するように第2の保護樹脂層6が設けられている。 [0008] Also in this embodiment, the first protective resin layer 5a is provided so as to fill the space between the main body portion 2a and the circuit board 3 of the bump electrodes 1 surrounds and semiconductor element 2, also the semiconductor element 2 the second protective resin layer 6 so as to cover the connecting portion upper surface of the first protective resin layer 5a of the main body portion 2a with respect to the wiring conductor 9 of at least a metal fine wire 8 is provided for. しかし、この第1の保護樹脂層5aの材料及び製造方法が図1の従来の第1の保護樹脂層5と相違している。 However, the material and manufacturing method of the first protective resin layer 5a is different from the conventional first protective resin layer 5 in FIG. 1. 本実施例の第1の保護樹脂層5aは第2の保護樹脂層6を形成するためのシリコ−ンラバ−に比べて粘度が低く、従来の第1の保護樹脂層5を形成するシリコ−ンゲルに近い粘度を有する液状エポキシ樹脂を半導体素子2の本体部2aと回路基板3との間に充填し、しかる後、硬化することによって形成したものである。 The first protective resin layer 5a of this embodiment is silicone for forming a second protective resin layer 6 - silicone to form a first protective resin layer 5 having low viscosity, conventional compared to - - Nraba Ringer's filled between the main body portion 2a and the circuit board 3 of the semiconductor element 2 a liquid epoxy resin having a closer viscosity, thereafter, it is obtained by forming by hardening. また、 Also,
硬化した後において、第1の保護樹脂層5aの硬度及び剛性は第2の保護樹脂層6及び従来の第1の保護樹脂層5のこれ等よりも大きい。 In After curing, the hardness and rigidity of the first protective resin layer 5a is larger than this, such as the second protective resin layer 6 and the first protective resin layer 5 of the prior art. このため第1の保護樹脂層5 Therefore the first protective resin layer 5
aは硬化前においては、半導体素子2と回路基板3との対向する比較的狭い領域に良好に注入してこれを充填することができ、硬化後においてはバンプ電極1を押し付け力から保護するための台座として良好に機能する。 a is before curing, in good injected in a relatively narrow region facing the semiconductor element 2 and the circuit board 3 can be filled with this, to protect the bump electrode 1 from the pressing force after curing well it functions as a pedestal.

【0009】半導体素子2が固着された回路基板3は放熱性を有する金属支持板11の上に配置され、この下面の金属層10が半田(導電性接合材)12によって支持板11に結合され、これ等はエポキシ樹脂から成る樹脂封止体13によって一体に成形されている。 [0009] circuit board 3 on which the semiconductor element 2 is fixed is disposed on the metal supporting plate 11 having heat dissipation, the lower surface of the metal layer 10 is coupled to the support plate 11 by soldering (conductive bonding material) 12 , which like are integrally formed by a resin sealing body 13 made of epoxy resin. 樹脂封止体13は、回路基板3、第2の保護樹脂層6、電子回路素子7、金属細線8及び支持板11を覆うように金型を使用した周知のトランスファモールドで形成されている。 Resin sealing body 13, the circuit board 3, a second protective resin layer 6, the electronic circuit element 7 is formed by a known transfer molding using a mold so as to cover the metal thin wires 8 and the support plate 11.
なお、図2には示されていないが、回路基板3上の端子(電極)を外部回路に接続するための外部リードも設けられており、この外部リードと回路基板3の端子とが金属細線(内部リード)で接続され、これも樹脂封止体1 Although not shown in FIG. 2, and the external lead also provided for connecting terminals on the circuit board 3 (electrode) to an external circuit, the terminals of the external leads and the circuit board 3 is a metal thin wire It is connected by (inner lead), which also resin sealing body 1
3で被覆されている。 It is coated with 3. 樹脂封止体13の硬度は第2の保護樹脂層6の硬度よりも大きく、第1の保護樹脂層5a The hardness of the resin sealing body 13 is greater than the hardness of the second protective resin layer 6, a first protective resin layer 5a
の硬度と同一又はこれよりも大きいことが望ましい。 It is desirable that the larger identical to or than the hardness.

【0010】上記の本実施例の電子回路装置によれば、 [0010] According to the electronic circuit device of the present embodiment,
第1の保護樹脂層5aが台座として機能するため、バンプ電極1のクラック及び断線を良好に防止することができる。 Since the first protective resin layer 5a serves as a pedestal, it is possible to satisfactorily prevent the cracking and breaking of the bump electrodes 1.

【0011】 [0011]

【変形例】本発明は上述の実施例に限定されるものでなく、例えば次の変形が可能なものである。 [Modification] The present invention is not limited to the embodiments described above, for example, those capable of following deformation. (1) 図2では金属細線8を電子回路素子7に接続しているが、この代りに外部リード(図示せず)に接続することができる。 (1) In Figure 2 the metal thin wires 8 are connected to the electronic circuit element 7 may be connected to this place in the external lead (not shown). (2) 第2の保護樹脂層6を電子回路素子7及び金属細線8の全部を被覆するように形成することができる。 (2) can be a second protective resin layer 6 is formed so as to cover the whole of the electronic circuit element 7 and the metal thin wires 8. (3) 支持板11の下面を樹脂封止体12で被覆しないように構成することができる。 (3) the lower surface of the support plate 11 may be configured not coated with a resin sealing body 12.

【図面の簡単な説明】 BRIEF DESCRIPTION OF THE DRAWINGS

【図1】従来の電子回路装置を示す断面図である。 1 is a cross-sectional view showing a conventional electronic circuit device.

【図2】本発明の実施例に係わる電子回路装置を示す断面図である。 2 is a sectional view showing an electronic circuit device according to an embodiment of the present invention.

【符号の説明】 DESCRIPTION OF SYMBOLS

1 バンプ電極 2 半導体素子 3 回路基板 5a 第1の保護樹脂層 6 第2の保護樹脂層 8 金属細線 11 支持板 13 樹脂封止体 1 bump electrodes 2 semiconductor element 3 circuit board 5a first protective resin layer 6 and the second protective resin layer 8 thin metal wires 11 support plate 13 resin sealing body

フロントページの続き (58)調査した分野(Int.Cl. 7 ,DB名) H01L 23/29 H01L 23/31 H01L 25/00 H01L 23/36 H01L 21/60 Following (58) investigated the field of front page (Int.Cl. 7, DB name) H01L 23/29 H01L 23/31 H01L 25/00 H01L 23/36 H01L 21/60

Claims (1)

    (57)【特許請求の範囲】 (57) [the claims]
  1. 【請求項1】 バンプ電極を備えた半導体素子と、回路基板と、第1及び第2の保護樹脂層と、樹脂封止体とから成り、 前記半導体素子の平板状の本体部は前記バンプ電極によって前記回路基板の配線導体に接続され、 前記第1の保護樹脂層は、前記半導体素子の前記バンプ電極を被覆し且つ前記半導体素子の前記本体部の一方の主面と前記回路基板との間を充填するように設けられ、 前記第2の保護樹脂層は、前記半導体素子の前記本体部の他方の主面を被覆するように設けられ、 前記樹脂封止体は前記第2の保護樹脂層を介して前記回路基板を覆うように設けられ、 前記第1の保護樹脂層は液状エポキシ樹脂に基づいて形成され、 前記第2の保護樹脂層はシリコ−ンラバ−から成り、 前記第1の保護樹脂層は前記第2の保護樹脂層よ A semiconductor element having a 1. A bump electrodes, and the circuit board, and the first and second protective resin layer made of a resin sealing body, plate-like body portion of said semiconductor element is the bump electrode connected to said circuit board wiring conductor by the first protective resin layer, between the one principal surface and the circuit board of the main body portion of the bump electrode was coated and the semiconductor elements of the semiconductor element provided so as to fill the said second protective resin layer, the provided so as to cover the other main surface of the main body portion of the semiconductor element, the resin sealing body the second protective resin layer the provided so as to cover the circuit board via the first protective resin layer is formed on the basis of the liquid epoxy resin, the second protective resin layer is a silicone - Nraba - made, the first protection resin layer and the second protective resin layer も大きい硬度を有していることを特徴とする電子回路装置。 Electronic circuit device, characterized in that a is also large hardness.
JP35233297A 1997-12-05 1997-12-05 Electronic circuit device including a semiconductor element Expired - Fee Related JP3147157B2 (en)

Priority Applications (1)

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JP35233297A JP3147157B2 (en) 1997-12-05 1997-12-05 Electronic circuit device including a semiconductor element

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Application Number Priority Date Filing Date Title
JP35233297A JP3147157B2 (en) 1997-12-05 1997-12-05 Electronic circuit device including a semiconductor element

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JPH11176882A true JPH11176882A (en) 1999-07-02
JP3147157B2 true JP3147157B2 (en) 2001-03-19

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8955418B2 (en) 2013-03-08 2015-02-17 Black & Decker Inc. Threaded fastener driving tool

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5143451B2 (en) * 2007-03-15 2013-02-13 オンセミコンダクター・トレーディング・リミテッド Semiconductor device and manufacturing method thereof
CN104798194B (en) * 2013-01-11 2017-07-18 三菱电机株式会社 Semiconductor device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8955418B2 (en) 2013-03-08 2015-02-17 Black & Decker Inc. Threaded fastener driving tool

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JPH11176882A (en) 1999-07-02 application

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