JP3079306B2 - Thin film transistor array substrate for liquid crystal display - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a technique for preventing a mounting electrode connected to a driving IC from peeling off in a thin film transistor array substrate (also referred to as a TFT array substrate) used in a liquid crystal display device.

[0002]

2. Description of the Related Art FIG. 11 shows a TFT of a general liquid crystal display device.
FIG. 3 is a schematic circuit configuration diagram of an array substrate. A group of gate lines 14 extends in the X direction, and a group of source lines 15 extends in the Y direction. In the vicinity of each intersection between the gate wiring 14 and the source wiring 15, a TFT (thin film transistor) 12 and a TF
The pixel electrode 13 is arranged so as to be connected to the drain of T12. The gate of each TFT 12 is connected to a gate line 14, and the source is connected to a source line 15.
The TFT 12 functions as a switching element, and the pixel electrode 1
3 drives the liquid crystal molecules thereon.

The mounting electrode portion 11 at the end of each gate wiring 14
Each gate wiring 1 from a driving IC (not shown) connected to
4, all the TFTs 12 on the gate wiring 14 are turned on by the pulse signal sequentially applied to the gate wiring 14. Then, the mounting electrode portion 11 at the end of each source wiring 15
The video signal supplied from the drive IC connected to the pixel electrode 13 through the source line 15 is supplied to each pixel electrode 13 through the TFT 12 in the ON state, and the liquid crystal molecules on the pixel electrode 13 are driven.

In a liquid crystal display device using this TFT array substrate, the arrangement of liquid crystal molecules on each pixel electrode 13 changes depending on the magnitude of the signal voltage supplied to the pixel electrode 13. Thus, when a twist-nematic liquid crystal is used as the liquid crystal, the light passing through the liquid crystal layer changes its polarization direction. By providing polarizing plates before and after the optical path via the liquid crystal layer, the amount of light passing through the liquid crystal display device can be controlled.

As can be seen from FIG. 11, the TFT array substrate is roughly divided into a large number of pixel portions having the TFT 12 and the pixel electrode 13 and the terminal of the gate wiring 14 and the source wiring 15 located in the periphery to the driving IC. And the mounting electrode portion 11.

FIG. 7 is a sectional view of a pixel portion of a general TFT array substrate. Hereinafter, a schematic manufacturing process of the pixel portion of the TFT array substrate will be described with reference to FIGS. First, a transparent electrode 2 serving as a pixel electrode 13 is formed on a transparent glass substrate 1. Next, the gate electrode 3 is formed on the glass substrate 1.
To form Then, a gate insulating film 4 made of a silicon nitride film of the TFT 12, a semiconductor film 5 acting as a channel layer of the TFT 12, and a first protective insulating film 6 acting as a protective film against etching of the TFT 12 are successively deposited. Next, the first protective insulating film 6 is patterned. Next, a first opening 7 is provided in the semiconductor film 5 and the gate insulating film 4 on the transparent electrode 2 to expose a part of the transparent electrode 2. Then, after depositing a metal film of aluminum, titanium, tantalum, or the like, patterns of the source electrode 8a and the drain electrode 8b are simultaneously formed. At this time, the drain electrode 8b is formed such that the drain electrode 8b and the transparent electrode 2 (pixel electrode 13) are connected through the first opening 7 opened on the transparent electrode 2. At this time,
The metal film and the semiconductor film 5 are formed using the same resist pattern.
Is patterned by dry etching or the like, so that the source electrode 8a and the drain electrode 8b
It is composed of layers. Finally, after depositing a second protective insulating film 9 for protecting the TFT 12, the second protective insulating film 9, the semiconductor film 5, and the gate insulating film 4 are formed on the transparent electrode 2 (pixel electrode 13). Two openings 10 are provided. The gate electrode 3 is connected to the gate wiring 14, and the source electrode 8a
Are connected to the source wiring 15. A liquid crystal layer is disposed on the transparent electrode 2 (pixel electrode 13). Through the above steps, the pixel portion of the TFT array substrate is completed.

FIG. 8 is a plan view showing the configuration of a mounting electrode section 11 of a driving IC for a TFT array substrate according to the prior art, FIG. 9 is a sectional view taken along the line dd 'in FIG.
0 is a sectional view taken along line ee 'in FIG. In these figures, 1 is the glass substrate described above, 4 is a gate insulating film, 5 is a semiconductor film on the gate insulating film 4, 8 is one by one.
One mounting electrode 9 individually connected to one gate electrode 3 or source electrode 8a via the gate wiring 14 or source wiring 15; a second protective insulating film 9 deposited on the whole; 10 is a transparent electrode 2 (pixel electrode 13)
Is a second opening formed in the second protective insulating film 9, the semiconductor film 5, and the gate insulating film 4 when the gate insulating film 9 is exposed.

The mounting electrode 8 is usually formed simultaneously with the source electrode 8a and the drain electrode 8b. Then, after the second protective insulating film 9 is deposited thereon, the second protective insulating film 9 is etched at the portions of the mounting electrodes 8 connected to the driving IC by the second openings 10. Is provided.
As described above, the mounting electrode unit 11 is formed. The mounting electrode portion 11 formed in this manner is the same for the gate wiring 14 and for the source wiring 15.

In the second openings 10 of the mounting electrode section 11,
Attach the wiring part of the film carrier to which the drive IC is attached. It is desirable that the unevenness of the mounting electrode portion 11 is as small as possible from the viewpoint of reducing the bonding resistance with the film carrier and improving the bonding strength. Therefore, the pattern formed simultaneously with the source electrode 8a and the drain electrode 8b, which are the uppermost metal layers of the TFT array substrate, is
We use as.

As shown in FIG. 10, the unevenness of the second protective insulating film 9 covering the mounting electrodes 8 is relatively small as h ₂ .

[0011]

As described above, since the mounting electrode 8 is formed simultaneously with the source electrode 8a and the drain electrode 8b, the mounting electrode 8 is formed of a two-layer film of the metal film and the semiconductor film 5. . However, the semiconductor film 5 and the underlying gate insulating film 4 have poor adhesion, and have a problem that the semiconductor film 5 is very easily peeled off. In some cases, due to a mistake in attaching the film carrier, a step of removing the attached film carrier and mounting the film carrier again may be performed. In the film carrier peeling step, there is a problem that the mounting electrode 8 is frequently peeled off.

[0012]

According to the present invention SUMMARY OF THE INVENTION The thin film transistor array substrate of a liquid crystal display device manufacturing method, a plurality of
A thin-film transistor and multiple pixel electrodes are arranged in a matrix.
Column, source wiring connected to the thin film transistor,
Alternatively, connect a driver IC that supplies signals to the gate wiring.
With a gate insulating film on the glass substrate.
A semiconductor film is laminated, and the source wiring or
Indicates that the mounting electrode portion connected to the gate wiring is a source electrode
Of the thin film transistor array substrate
A manufacturing method, comprising a semiconductor film and an insulating film on a pixel electrode
Semiconductor in the range corresponding to the mounting electrode during the hole making process
In the area where the film was removed and opened, the mounting electrode was
It is characterized by being formed directly on top. This manufacturing method
Since the semiconductor film that caused the mounting electrode peeling has been removed from the substrate of the transistor array manufactured by the above, the adhesion of the mounting electrode is improved, the mounting electrode peels off during fabrication, and is mounted during remounting. The peeling of the electrode is reliably prevented.

[0013]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS The method for manufacturing a thin film transistor array substrate of a liquid crystal display device according to the first aspect of the present invention comprises the steps of:
Thin film transistors and multiple pixel electrodes in a matrix
And a source arrangement connected to the thin film transistor.
Line or a gate wiring to drive ICs that supply signals.
It has a mounting electrode part connected to it, and gate insulation on the glass substrate
A film and a semiconductor film are laminated, and the source wiring
Alternatively, the mounting electrode portion connected to the gate wiring is
Thin film transistor array base formed simultaneously with electrodes
A method for manufacturing a plate, comprising: a semiconductor film on a pixel electrode;
Half of the range corresponding to the mounting electrode during the hole punching process on the edge film
In the area where the conductor film was removed and opened, the mounting electrode was
Thin film transistor characterized by being formed directly on a substrate
This is a method for manufacturing an array substrate. This manufacturing method wherein the semiconductor film under the mounting electrodes in the mounting electrode portion is removed, the semiconductor film under mounting electrodes that caused peeling of mounting electrodes in the prior is removed, The adhesion of the mounting electrodes is improved, and the mounting electrodes can be prevented from peeling during re-mounting as well as peeling during mounting.

According to a second aspect of the present invention, there is provided a method of manufacturing a thin film transistor array substrate for a liquid crystal display device according to the first aspect.
In the manufacturing method described above, the semiconductor film is removed and an opening is formed.
The region is formed for each mounting electrode .

According to a third aspect of the present invention, there is provided a method of manufacturing a thin film transistor array substrate for a liquid crystal display device according to the first aspect.
In the manufacturing method described above, the semiconductor film is removed and an opening is formed.
Regions are connected between adjacent mounting electrode parts on a plane
It is characterized in that it is formed over the entire range .

In the case where a portion for removing the semiconductor film is provided for each mounting electrode, irregularities are newly formed in the mounting electrode portion and the unevenness level increases. Since the removal part of the semiconductor film is provided, it is possible to suppress the increase in the unevenness of the mounting electrode part, to reduce the adhesive resistance with the film carrier to which the drive IC is attached,
Improves the bonding strength of the film carrier.

Hereinafter, embodiments of a thin film transistor array substrate of a liquid crystal display device according to the present invention will be described in detail with reference to the drawings.

(Embodiment 1) FIG. 1 is a plan view showing a configuration of a mounting electrode portion of a driving IC of a TFT array substrate according to Embodiment 1, and FIG. 2 is a cross section taken along line aa 'in FIG. FIG. 3 is a sectional view taken along line bb 'in FIG. In these figures, 1 is a glass substrate, 4 is a gate insulating film on the glass substrate 1, 5 is a semiconductor film on the gate insulating film 4, 7 is a first opening formed in the semiconductor film 5 and the gate insulating film 4. And 8, each mounting electrode individually connected to each gate electrode 3 or source electrode 8a (see FIG. 7) via the gate wiring 14 or source wiring 15 (see FIG. 11). , 9 are a second protective insulating film deposited on the whole, and 10 is a transparent electrode 2 (pixel electrode 1).
The second opening is formed in the second protective insulating film 9, the semiconductor film 5, and the gate insulating film 4 when 3) is exposed.

The sectional configuration of the pixel portion of the TFT array substrate is as follows:
This is the same as the conventional configuration, as shown in FIG. In FIG. 7, 1 is a glass substrate, 2 is a transparent electrode (pixel electrode 13) on the glass substrate 1, and 3 is a T electrode formed on the glass substrate 1.
FT12 gate electrode, 4 is a gate insulating film, 5 is a TFT
12 is a semiconductor film as a channel layer, 6 is a first protective insulating film, 7 is a first opening formed in the semiconductor film 5 and the gate insulating film 4, 8a is a source electrode, 8b is a drain electrode, 9 Is a second protective insulating film, 10 is a second protective insulating film 9
A second opening 12 formed in the semiconductor film 5 and the gate insulating film 4 is a TFT (thin film transistor).

FIGS. 4A to 4D are cross-sectional views showing a process for fabricating a mounting electrode portion for the drive IC of the TFT array substrate in the first embodiment. Hereinafter, a manufacturing process of the mounting electrode unit 11 of the TFT array substrate will be described with reference to FIG.

(1) First, as shown in FIG. 4A, a gate insulating film 4 made of a silicon nitride film, a semiconductor film 5 made of amorphous silicon, and a first protection made of a silicon nitride film on a glass substrate 1. After forming the insulating film 6 (see FIG. 7), the first protective insulating film 6 is removed by etching (see FIG. 7).

(2) Next, as shown in FIG. 4B, the semiconductor film 5 and the gate insulating film 4 where the mounting electrodes 8 are to be formed are dry-etched using a fluorine-based gas. And a first opening 7 is provided. In this step, the transparent electrode 2 (pixel electrode 1) shown in FIG.
3) This is the same as the step of forming the first opening 7 above.
The operation of forming the first opening 7 in the semiconductor film 5 and the gate insulating film 4 at the place where the mounting electrodes 8 are to be formed is not a conventional technique. What is important when forming the first openings 7 corresponding to the plurality of mounting electrodes 8 is that the first openings 7 cover the entire range of the mounting electrode 11 as shown in FIG. In other words, the configuration is such that all the mounting electrodes 8 to be formed later are connected in a plane in the formation region.

(3) Next, as shown in FIG. 4C, a two-layer metal structure of aluminum and titanium is formed on the remaining semiconductor film 5 and on the glass substrate 1 at the first opening 7. To form mounting electrodes 8. These mounting electrodes 8 are formed simultaneously with the source electrode 8a and the drain electrode 8b and in a state of being connected to the gate wiring 14 and the source wiring 15.

(4) Finally, as shown in FIG.
After depositing the second protective insulating film 9 made of a silicon nitride film, portions of the second protective insulating film 9 corresponding to the individual mounting electrodes 8 are dry-etched using a fluorine-based gas. , The second openings 10 are formed. FIG.
(D) and FIG. 2 show the same situation.

The second opening 10 on the second protective insulating film 9
The drive IC for the mounting electrodes 8 exposed at
The wiring part of the film carrier to which is attached is fixed by bonding. Thus, the liquid crystal display device is completed. In this liquid crystal display device, the signal output from the drive IC is:
The data is input to the TFT array substrate via the mounting electrode unit 11.

The T of the liquid crystal display device configured as described above
In the FT array substrate, before forming the mounting electrodes 8, the semiconductor film 5 and the gate insulating film 4 are removed by forming the first openings 7 at locations where the mounting electrodes 8 are to be formed. Since the mounting electrodes 8 are formed directly on the glass substrate 1, the adhesion of the mounting electrodes 8 is improved, and the mounting electrodes 8, which has been a problem in the conventional technology, are easily peeled off from the semiconductor film 5. The point has been resolved.
In addition, the problem that the mounting electrodes 8 are peeled off when the film carrier is peeled off when the film carrier to which the drive IC is pasted is peeled off and the mounting is performed again due to a mistake in attaching the film carrier to which the drive IC is pasted is also solved. ing.

In the first embodiment, the first opening 7 shown in FIG.
Is removed by the transparent electrode 2 (pixel electrode 1) shown in FIG.
3) Since the same step as the step of forming the first opening 7 in the semiconductor film 5 and the gate insulating film 4 can be performed, no new step is required.

When the wiring portion of the film carrier to which the drive IC is attached is attached to the mounting electrodes 8 in the second opening 10 of the mounting electrode portion 11,
In order to reduce the adhesion resistance to the film carrier and improve the adhesion strength, it is desirable that the unevenness is as small as possible. By the way, the semiconductor film 5 for each mounting electrode 8.
When the removed portion is provided, irregularities are newly formed on the mounting electrode portion 11 and the unevenness level increases, which is disadvantageous in the mounting process. However, in the case of the first embodiment, when the semiconductor film 5 is removed, A first opening 7 for removing the semiconductor film 5 and the gate insulating film 4 is formed over the entire area of the mounting electrode portion 11, and the first opening 7 is formed on all mounting electrodes 8 to be formed later. since ... it has a configuration in which continuous in a planar manner in the region forming the, as shown in FIG. 3, step height of the second protective insulating film 9 covering the mounting electrodes 8 ... is h _1, which is the prior art the same as the step height h ₂ shown in FIG. 10 when, not inviting an increase in irregular steps.

(Embodiment 2) FIG. 5 is a schematic plan view showing a configuration of a mounting electrode portion of a drive IC of a TFT array substrate according to Embodiment 2, and FIG. 6 is a view taken along line cc 'in FIG. FIG. In these figures, 1 is a glass substrate,
4 is a gate insulating film, 5 is a semiconductor film, 7 is a first opening provided in the semiconductor film 5 and the gate insulating film 4, and in this case, the first opening 7 is a mounting electrode to be formed later. 8... Are formed. By forming the first openings 7 ...
The semiconductor film 5 under the mounting electrodes 8 is removed and is directly formed on the glass substrate 1, so that the adhesion of the mounting electrodes 8 is improved. Reference numeral 8 denotes a mounting electrode formed in each of the first openings 7 while being connected to the gate wiring 14 or the source wiring 15, reference numeral 9 denotes a second protective insulating film deposited so as to cover the entirety, and reference numeral 10 denotes a mounting. The second corresponding to the position of the electrodes 8.
The second opening 16 provided in the protective insulating film 9 is a drive IC.

The structure of the second embodiment is based on a driving IC
This is a configuration in which 16 is directly attached to a TFT array substrate and mounted (chip-on-glass configuration).

The manufacturing process of the TFT array substrate in the second embodiment is the same as that in the first embodiment. Mounting electrode 8
Are performed simultaneously with the step of removing the semiconductor film 5 and the gate insulating film 4 on the transparent electrode 2 (pixel electrode 13).

In the above configuration, since the semiconductor film 5 below the mounting electrodes 8 is removed, the adhesion of the mounting electrodes 8 is improved as in the first embodiment, and the manufacturing process and remounting are performed. It is possible to prevent the mounting electrodes 8 from peeling off in a process or the like.

Since the step of removing the semiconductor film 5 is performed in the same step as the step of forming the first opening 7 on the transparent electrode 2 (pixel electrode 13), no new step occurs.

[0034]

According to the method for manufacturing a thin film transistor array substrate of a liquid crystal display device according to the present invention, the mounting electrodes may be peeled off under each mounting electrode in the mounting electrode portion connected to the gate wiring or the source wiring. there semiconductor film <br/> removed to Runode improves the adhesion of the mounting electrodes, it is possible to reliably prevent peeling of the mounting electrodes during peeling and re-implement during production of the mounting electrode.

[Brief description of the drawings]

FIG. 1 is a plan view showing a configuration of a mounting electrode section of a drive IC of a TFT array substrate according to a first embodiment of the present invention.

FIG. 2 is a sectional view taken along the line aa 'in FIG.

FIG. 3 is a sectional view taken along line bb 'in FIG.

FIG. 4 is a cross-sectional manufacturing process diagram of a mounting electrode portion for a driving IC of the TFT array substrate in the first embodiment.

FIG. 5 is a schematic plan view showing a configuration of a mounting electrode section of a drive IC of a TFT array substrate according to a second embodiment of the present invention.

FIG. 6 is a sectional view taken along line cc ′ in FIG. 5;

FIG. 7 is a cross-sectional configuration diagram of a pixel portion of a general TFT array substrate.

FIG. 8 shows a conventional driving IC for a TFT array substrate.
FIG. 4 is a plan view showing a configuration of a mounting electrode section of FIG.

9 is a sectional view taken along line dd 'in FIG.

FIG. 10 is a sectional view taken along line ee ′ in FIG. 8;

FIG. 11 is a schematic circuit configuration diagram of a thin film transistor array substrate of a general liquid crystal display device.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1 ... Glass substrate 2 ... Transparent electrode 3 ... Gate electrode 4 ... Gate insulating film 5 ... Semiconductor film 6 ... First protective insulating film 7 ... First opening 8a ... Source electrode 8b ... Drain Electrode 9 Second protective insulating film 10 Second opening 11 Mounting electrode part 12 Thin film transistor (TFT) 13 Pixel electrode 14 Gate wiring 15 Source wiring 16 Driving IC

Claims (3)

(57) [Claims] [Claim 1] arranging a plurality of thin film transistors and a plurality of pixel electrodes in a matrix, it has a mounting electrode portions for connecting the driving IC supplies signals to the thin film transistor connected source wiring or the gate wiring, Glass substrate
A gate insulating film and a semiconductor film are stacked on top of each other.
A method for manufacturing a thin film transistor array substrate, wherein a mounting electrode portion connected to the source wiring or the gate wiring is formed simultaneously with the source electrode , wherein a hole is formed in a semiconductor film and an insulating film on a pixel electrode.
Remove the semiconductor film in the area corresponding to the mounting electrode area.
Area, the mounting electrodes can be formed directly on the glass substrate.
Method of manufacturing thin film transistor array substrate characterized by the following:
Law. 2. The method according to claim 1, wherein the opening for removing the semiconductor film is formed in an actual area.
2. The method according to claim 1, wherein the substrate is formed for each mounting electrode. 3. A flat region for removing said semiconductor film.
On the entire area connected between adjacent mounting electrodes on the surface
2. The method according to claim 1, wherein the method comprises: