JP2940478B2 - Shielded surface mount components - Google Patents
Shielded surface mount componentsInfo
- Publication number
- JP2940478B2 JP2940478B2 JP8181167A JP18116796A JP2940478B2 JP 2940478 B2 JP2940478 B2 JP 2940478B2 JP 8181167 A JP8181167 A JP 8181167A JP 18116796 A JP18116796 A JP 18116796A JP 2940478 B2 JP2940478 B2 JP 2940478B2
- Authority
- JP
- Japan
- Prior art keywords
- chip
- circuit board
- connection terminals
- shield
- circuit
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/552—Protection against radiation, e.g. light or electromagnetic waves
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/14—Integrated circuits
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/161—Cap
- H01L2924/1615—Shape
- H01L2924/16152—Cap comprising a cavity for hosting the device, e.g. U-shaped cap
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/301—Electrical effects
- H01L2924/30107—Inductance
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/301—Electrical effects
- H01L2924/3011—Impedance
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/301—Electrical effects
- H01L2924/3025—Electromagnetic shielding
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/0213—Electrical arrangements not otherwise provided for
- H05K1/0216—Reduction of cross-talk, noise or electromagnetic interference
- H05K1/0218—Reduction of cross-talk, noise or electromagnetic interference by printed shielding conductors, ground planes or power plane
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/30—Assembling printed circuits with electric components, e.g. with resistor
- H05K3/32—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
- H05K3/34—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by soldering
- H05K3/341—Surface mounted components
- H05K3/3431—Leadless components
Description
【０００１】[0001]
【発明の属する技術分野】本発明は電気部品の回路基板
実装技術に関し、特にシールドケースの不要な表面実装
部品とその実装構造に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a technology for mounting electric components on a circuit board, and more particularly to a surface mounting component which does not require a shield case and a mounting structure thereof.
【０００２】[0002]
【従来の技術】コンピュータ及び通信機器等に代表され
る情報処理機器の増加と共に、機器の電磁環境適合性
（Ｅｌｅｃｔｒｏ−Ｍａｇｎｅｔｉｃ Ｃｏｍｐａｔｉ
ｂｉｌｉｔｙ；「ＥＭＣ」という）の重要度は高まって
きている。ＥＭＣは電磁波エネルギーの伝播によるもの
と、ケーブル等を伝導することによるものとに大別され
る。2. Description of the Related Art With the increase in information processing equipment represented by computers and communication equipment, the compatibility of the equipment with the electromagnetic environment (Electro-Magnetic Compatibility) has increased.
(EMC) is increasing in importance. EMC is broadly classified into those based on the propagation of electromagnetic wave energy and those based on conducting cables and the like.
【０００３】このうち、ケーブル伝導によるものは、一
般に、フィルタを機器内に実装することにより不要信号
やノイズを減衰させることができることから、比較的容
易にＥＭＣ対策を施すことができる。[0003] Among them, those based on cable conduction can attenuate unnecessary signals and noise by mounting a filter in a device, so that EMC measures can be taken relatively easily.
【０００４】一方、電磁波輻射によるものは、空間を飛
ぶ（伝播する）ものであり、その抑制は、一般に、シー
ルドにより行われる。すなわち、機器をシールド・エン
クロージャに収容し、輻射による結合を小さくするもの
である。しかしながら、この方法は、シールド・エンク
ロージャが大きくなるという問題点を有している。[0004] On the other hand, the electromagnetic radiation causes the air to fly (propagate) in space, and its suppression is generally performed by a shield. That is, the equipment is housed in a shielded enclosure to reduce radiation coupling. However, this method has a problem that the shield enclosure becomes large.
【０００５】さらに、別の問題点として、回路基板から
一旦その外に電磁波エネルギーが漏れ出すと、シールド
・エンクロージャ内で他の回路やケーブルにノイズが乗
ることになり、そうなると、シールド・エンクロージャ
で厳重に覆っても、ケーブルからノイズが出ることにな
る。従って、根本的な対策としては、回路基板の段階で
不要な電磁放射を極力小さなレベルに抑制する、という
ことになる。Further, as another problem, once electromagnetic wave energy leaks out of the circuit board, noise will be applied to other circuits and cables in the shielded enclosure, and if this occurs, severe noise will occur in the shielded enclosure. Noise will be emitted from the cable. Therefore, as a fundamental countermeasure, unnecessary electromagnetic radiation is suppressed to a minimum level at the stage of the circuit board.
【０００６】そこで、従来より、この方針に沿った対策
は種々行われている。まず、行われた対策としては、回
路基板の表面を導電体を印刷することで覆い、回路パタ
ーンからのエネルギー輻射を小さくしようというもので
あり、例えば特開平３−７４８９７号公報（発明の名
称：「電磁波シールド付き回路基板」）などがその代表
例である。ちなみに、同公報には、配線パターンから輻
射される電磁波はシールド用導電層で反射、吸収され不
要輻射を減少させ、配線パターン間のクロストークをシ
ールド用導電層で覆うことによって防止し、さらに配線
パターンに接続される回路部品のインピーダンスの小さ
い側を中心にシールド用導電層を形成し、デジタル信号
の遷移時の不要電磁波の輻射を抑制するようにした構成
が提案されている。Therefore, various measures have conventionally been taken in accordance with this policy. First, a countermeasure taken is to cover the surface of the circuit board by printing a conductor to reduce the energy radiation from the circuit pattern. For example, Japanese Patent Application Laid-Open No. 3-74897 (Title of Invention: "Circuit board with electromagnetic wave shield") is a typical example. Incidentally, the publication discloses that electromagnetic waves radiated from the wiring pattern are reflected and absorbed by the conductive layer for shielding to reduce unnecessary radiation, and to prevent crosstalk between the wiring patterns by covering with a conductive layer for shielding. There has been proposed a configuration in which a conductive layer for shielding is formed around a side of a circuit component connected to a pattern where the impedance is small, so as to suppress radiation of unnecessary electromagnetic waves at the time of transition of a digital signal.
【０００７】しかしながら、上記公報記載の従来の方法
は、表面に配線のある回路基板について配線部分を絶縁
された導体でカバーすることにより輻射を小さくしよう
とするものであって、この従来の方法としては、基板に
実装された部品については全くシールド効果は得られな
い。However, the conventional method described in the above publication attempts to reduce radiation by covering a wiring portion of a circuit board with wiring on the surface with an insulated conductor. Does not provide any shielding effect for the components mounted on the board.
【０００８】それならば、基板に実装された部品をシー
ルドカバーで覆えばよいと考えるのは当然のことであ
る。この方法は、例えば特開昭６２−２５０６４８号公
報（発明の名称：「混成集積回路」）に提案されてお
り、図５に、その構成を断面図にて示す（特開昭６２−
２５０６４８号公報、第１図）。図５を参照して、フリ
ップチップ５０の上面を金属ベース基板５５で覆うこと
でシールド効果を得ている。なお、図５において、５２
は基板、５３は高熱伝導性樹脂、５１ａ、５１ｂは突起
電極、５４は配線パターン、５９、６０はチップ部品、
６１はリード線をそれぞれ示しており、金属ベース基板
５５は、下面に金属ベース５６が形成され、その上部に
は絶縁面５７を介して所定の金属部からなる配線パター
ン５８が形成されてなるものである。In this case, it is natural that the components mounted on the board should be covered with the shield cover. This method has been proposed, for example, in Japanese Patent Application Laid-Open No. Sho 62-250648 (title of the invention: "Hybrid Integrated Circuit"). FIG.
No. 250648, FIG. 1). Referring to FIG. 5, a shielding effect is obtained by covering the upper surface of flip chip 50 with metal base substrate 55. In FIG. 5, 52
Is a substrate, 53 is a high thermal conductive resin, 51a and 51b are protruding electrodes, 54 is a wiring pattern, 59 and 60 are chip components,
Reference numeral 61 denotes a lead wire, and a metal base substrate 55 is formed by forming a metal base 56 on a lower surface and forming a wiring pattern 58 made of a predetermined metal portion via an insulating surface 57 on the upper surface. It is.
【０００９】しかしながら、このような構造を取ること
で、複雑となりコストも上昇する。[0009] However, adopting such a structure increases the complexity and the cost.
【００１０】[0010]
【発明が解決しようとする課題】上記したように、上記
従来の方法は、回路基板を他の付加的手段によって覆
い、シールドするという手法によるものであり、不要な
電磁波の輻射を抑制する対策としては、対症療法的であ
り、完全な対策でなく、かつ費用もかかる、という問題
点を有している。As described above, the above-mentioned conventional method is based on a technique of covering and shielding a circuit board with other additional means, and as a measure for suppressing the radiation of unnecessary electromagnetic waves. Have the problem that they are symptomatic, are not a complete measure, and are expensive.
【００１１】さらに、上記従来の方法においては、部品
のシールド用に付加的手段を設けるものであるため、部
品ないし機器の寸法（サイズ）が大となり、機器の小型
化には適さない、という問題点を有している。Furthermore, in the above-mentioned conventional method, since an additional means is provided for shielding the parts, the size (size) of the parts or the equipment becomes large, which is not suitable for downsizing the equipment. Have a point.
【００１２】従って、本発明は、上記事情に鑑みてなさ
れたものであって、その目的は、電磁波輻射を部品と回
路基板のレベルで本質的に解決するようにした手段を提
供することにある。すなわち、本発明は、付加的な手段
を必要とせずに、回路基板と部品のみで不要輻射を抑制
可能とし、その結果として、最小の寸法を実現し、面積
も厚みもミニマムになり、機器の小型軽量化に貢献する
ところ極めて大の部品及びシールド構造を提供するもの
である。Accordingly, the present invention has been made in view of the above circumstances, and an object of the present invention is to provide means for essentially solving electromagnetic radiation at a component and circuit board level. . That is, the present invention enables unnecessary radiation to be suppressed only by the circuit board and components without requiring additional means, and as a result, the minimum dimensions are realized, the area and the thickness are minimized, and the An extremely large component and a shield structure that contribute to miniaturization and lightening are provided.
【００１３】[0013]
【課題を解決するための手段】前記目的を達成するた
め、本発明に係るシールド付き表面実装部品は、その概
略を述べれば、回路の形成されている領域以外を導電性
被膜で覆った表面実装部品の縁端部に複数の接地接続端
子を備え、これらの接地接続端子の内側部分に信号接続
端子を配設したものである。より詳細には、ＬＳＩ、抵
抗、及びキャパシタなどのチップ形態の表面実装部品に
おいて、回路形成部分と外部接続端子部以外をチップの
側面も含めて導電性膜で覆い、さらに回路が形成された
面に属するチップ縁端部周囲に複数の接地接続端子を備
え、前記接地接続端子は前記チップ外周の前記導電性膜
に接続され、さらにこれらの接地接続端子の内側の表面
に前記外部接続端子を配設したことを特徴とする。In order to achieve the above-mentioned object, a surface-mounted component with a shield according to the present invention is, in brief, a surface-mounted component in which a region other than a region where a circuit is formed is covered with a conductive film. A plurality of ground connection terminals are provided at the edge of the component, and signal connection terminals are provided inside the ground connection terminals. More specifically, LSI,
For chip and surface mount components such as capacitors
Oite, circuit formation portion and a non-external connection terminal portions chips
Covered with a conductive film including the side , and further a circuit was formed
Comprising a plurality of ground connection terminals around the chip edge end portion belonging to the surface, the ground connection terminal is connected to the conductive layer of the outer periphery of the chip, the more the external connection terminals on the inner surface of these ground connection terminal It is characterized by being arranged.
【００１４】また、本発明に係る表面実装部品と回路基
板のシールド構造は、その概略を述べれば、回路の形成
されている領域以外を導電性被膜で覆った表面実装部品
の縁端部に複数の接地接続端子を備え、これらの接地接
続端子の内側部分に信号接続端子を配設してなるシール
ド付き表面実装部品と、前記シールド付き表面実装部品
を搭載する回路基板であって、その表面を、該部品が搭
載される端子部を除いて導体で覆い、配線は全て内層に
形成してなる回路基板と、を備えたものである。In general , the shield structure of a surface mount component and a circuit board according to the present invention has a plurality of shield structures at an edge portion of the surface mount component in which a region other than a region where a circuit is formed is covered with a conductive film. And a circuit board on which the shielded surface-mounted component is mounted, wherein a signal connection terminal is arranged inside the grounded connection terminal, and a surface mounted component on which the shielded surface-mounted component is mounted. , covered with a conductor except for the terminal portion of the part is mounted, the wiring circuit board obtained by forming the inner layer all, Ru der those with.
【００１５】[0015]
【発明の実施の形態】以下に、本発明の好ましい実施の
形態及び具体的な実施例を図面を参照して順次説明す
る。本発明の実施の形態においては、それ自身シールド
された半導体（ＩＣ）、抵抗、コンデンサのチップ部品
に、ＧＮＤ接続端子及び信号接続端子を備え、一方、回
路基板の表面は、信号接続端子部を残してＧＮＤ導体ま
たは電源層導体で一面に覆った構造を有している。そし
て、信号層は全て回路基板の内層に配置され、表面には
全く露出していない。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Preferred embodiments and specific examples of the present invention will be described below with reference to the drawings. In an embodiment of the present invention, a chip part of a semiconductor (IC), a resistor and a capacitor which is shielded by itself has a GND connection terminal and a signal connection terminal, while the surface of the circuit board has a signal connection terminal portion. It has a structure that is entirely covered with GND conductors or power supply layer conductors. The signal layers are all disposed on the inner layer of the circuit board, and are not exposed at all on the surface.
【００１６】本発明においては、信号を回路基板の内層
を通すことで、信号線路からの電磁波輻射（放射）はほ
とんど完全にカットできる。In the present invention, the electromagnetic wave radiation (radiation) from the signal line can be almost completely cut by passing the signal through the inner layer of the circuit board.
【００１７】残る問題は、部品そのものからの放射であ
る。図４は、比較例として、従来のＩＣ（パッケージ入
り）４１や、抵抗チップ４２、キャパシタチップ４３を
実装した状態を断面図にて示したものである。特に、Ｉ
Ｃ１はそのリード４１が長いので、放射のレベルが大き
くなる。他のチップも低いレベルながらも放射はあり、
高周波回路では、これさえも問題となる。The remaining problem is radiation from the component itself. FIG. 4 is a cross-sectional view showing, as a comparative example, a state where a conventional IC (with package) 41, a resistor chip 42, and a capacitor chip 43 are mounted. In particular, I
Since C1 has a long lead 41, the level of radiation increases. Other chips also emit radiation at a low level,
In high frequency circuits, even this is a problem.
【００１８】これに対し、本発明に係る実装構造は、チ
ップ部品自体の周囲をメタライズし、このメタライズ部
と、回路基板の表面のベタパターンを複数の接続点で接
続し、この結果、部品は外部に対して完全にシールドさ
れる。On the other hand, in the mounting structure according to the present invention, the periphery of the chip component itself is metallized, and the metallized portion is connected to the solid pattern on the surface of the circuit board at a plurality of connection points. Completely shielded from the outside.
【００１９】図１は、本発明の好ましい実施の形態を例
示するための図であり、本発明が好適に適用される大型
のＬＳＩの実施例を示している。FIG. 1 is a diagram for illustrating a preferred embodiment of the present invention, and shows an embodiment of a large-sized LSI to which the present invention is suitably applied.
【００２０】図１を参照して、本実施例においては、Ｌ
ＳＩのダイ（チップ）１の周辺にはＧＮＤ端子（パッ
ド）が多数設けられており、このＧＮＤ端子はＬＳＩチ
ップの回路のＧＮＤ及びＬＳＩのシリコンダイに接続さ
れている。Referring to FIG. 1, in the present embodiment, L
A number of GND terminals (pads) are provided around the SI die (chip) 1, and these GND terminals are connected to the GND of the circuit of the LSI chip and the silicon die of the LSI.
【００２１】多数のＧＮＤ接続端子は、「バンプ」と呼
ばれる微小の導体（ロウ材や導電接着剤、あるいは溶融
し易い金属）、すなわち図１に示すＧＮＤ接続バンプ２
にて回路基板１０の表面層１１に接続される。ここで
「ＧＮＤ」とは、必ずしもＧＮＤ電位（接地電位）でな
く、電源層であってもよい。A large number of GND connection terminals are formed by minute conductors (brazing material, conductive adhesive, or easily meltable metal) called "bumps", that is, GND connection bumps 2 shown in FIG.
Is connected to the surface layer 11 of the circuit board 10. Here, “GND” is not necessarily a GND potential (ground potential) but may be a power supply layer.
【００２２】これによって、ＬＳＩ１も回路基板１０も
互いに電気的に接続されることによって、外部空間に対
して完全にシールドされることになる。As a result, the LSI 1 and the circuit board 10 are electrically connected to each other, so that they are completely shielded from the external space.
【００２３】図１に示した実装構造は、ミニマム（最小
寸法）のシールド構造を実現したものであり、最も単純
な形態であるといえる。The mounting structure shown in FIG. 1 realizes a minimum (minimum size) shield structure and can be said to be the simplest form.
【００２４】信号については、信号接続バンプ３でＬＳ
Ｉ１と回路基板１０とが電気的に接続されるが、信号の
接続経路は、ＧＮＤ接続の内側に入っているため、外部
とはシールドされる。そして、ＬＳＩ（ベアチップ）１
は、その回路面（図１のＩＣ回路面４参照）を下にして
回路基板１０と接続し、チップ１の電極にバンプ等を設
けハンダ等の接続材料を用いて基板１０の電極と接続す
るフリップチップ方式にて実装され、極めて小さなイン
ダクタンスで接続されるので、信号接続部分からの不連
続による放射は極めて小さい。For signals, the signal connection bumps 3
Although I1 is electrically connected to the circuit board 10, the signal connection path is shielded from the outside because the signal connection path is inside the GND connection. Then, LSI (bare chip) 1
Is connected to the circuit board 10 with its circuit surface (see the IC circuit surface 4 in FIG. 1) facing down, and bumps and the like are provided on the electrodes of the chip 1 and connected to the electrodes of the substrate 10 using a connection material such as solder. Since the components are mounted in a flip-chip manner and are connected with an extremely small inductance, radiation due to discontinuity from a signal connection portion is extremely small.
【００２５】図２は、本発明の別の実施例として、抵抗
チップのシールド構造の一例を示す断面図である。図２
を参照して、抵抗膜２４と信号接続端子２３のセラミッ
ダイ表面は導体２５で覆ってある。導体２５と、回路基
板の表層層１１とは複数のＧＮＤ接続端子２２で接続さ
れ、これらは信号接続端子２３の外側に配設してある。
このため、抵抗膜２４を通る回路部分は、抵抗チップの
セラミックダイ２１の周囲のＧＮＤ被膜２５と回路基板
の表面層１１によってカバーされ、これによりシールド
される。FIG. 2 is a sectional view showing an example of a shield structure of a resistor chip as another embodiment of the present invention. FIG.
, The surface of the ceramic die of the resistance film 24 and the signal connection terminal 23 is covered with a conductor 25. The conductor 25 and the surface layer 11 of the circuit board are connected by a plurality of GND connection terminals 22, which are arranged outside the signal connection terminals 23.
For this reason, the circuit portion passing through the resistive film 24 is covered by the GND film 25 around the ceramic die 21 of the resistive chip and the surface layer 11 of the circuit board, thereby being shielded.
【００２６】図３は、本発明の更に別の実施例として、
キャパシタ・チップのシールド構造の一例を示す断面図
である。図３を参照すると、本実施例のキャパシタは、
図４（Ｂ）に示したキャパシタ・チップと異なり、電極
が内部の層間ビア（ＶＩＡ）３６で相互接続されて、チ
ップの外側に導出されており、かつ多層セラミックダイ
３１の周囲は、信号接続端子３３を除いてメタライズさ
れている。FIG. 3 shows still another embodiment of the present invention.
It is sectional drawing which shows an example of the shield structure of a capacitor chip. Referring to FIG. 3, the capacitor of this embodiment is
Unlike the capacitor chip shown in FIG. 4B, the electrodes are interconnected by internal interlayer vias (VIA) 36 and are led out of the chip, and the periphery of the multilayer ceramic die 31 is connected to the signal connection. Metallized except for the terminal 33.
【００２７】これを回路基板１０に表面実装すると、キ
ャパシタ周囲のＧＮＤ被膜３５と回路基板表面層１１と
が複数の端子によって接続される。やはり、信号層１２
はキャパシタ外周のＧＮＤと回路基板の表面層１１で囲
まれシールドされる。When this is surface-mounted on the circuit board 10, the GND film 35 around the capacitor and the circuit board surface layer 11 are connected by a plurality of terminals. Again, the signal layer 12
Is shielded by being surrounded by GND on the outer periphery of the capacitor and the surface layer 11 of the circuit board.
【００２８】次に、上記した本発明の実施例において、
シールド性能がなぜ優れているのかを説明する。Next, in the above embodiment of the present invention,
Explain why the shielding performance is excellent.
【００２９】上記本発明の各実施例において、信号は、
回路基板の内層のストリップライン状の線路回路を伝播
する。この部分は、両面がＧＮＤ層で覆われているの
で、主としてＴＥＭモードが伝播する。そして、線路
は、完全にシールドされており、外部への電磁波エネル
ギーの放射はない。In each of the above embodiments of the present invention, the signal is:
The signal propagates through a line circuit in the form of a strip line on the inner layer of the circuit board. Since this portion is covered on both sides with the GND layer, the TEM mode mainly propagates. And the line is completely shielded, and there is no radiation of electromagnetic wave energy to the outside.
【００３０】また、上記実施例において、信号接続は、
フリップチップ方式にて行われ、極めて小さなインダク
タンスで接続されるので、この部分からの不連続による
放射は極めて小さい。In the above embodiment, the signal connection is
Since the connection is performed by a flip-chip method and with a very small inductance, the radiation from this portion due to discontinuity is extremely small.
【００３１】さらに、ＧＮＤ接続も複数設け、かつイン
ダクタンスが小さいので、ＧＮＤ電流が均一に保たれ、
エネルギー放射が小さい。Further, since a plurality of GND connections are provided and the inductance is small, the GND current is kept uniform.
Low energy emission.
【００３２】本発明は、デジタル回路に適用したときに
不要なノイズエネルギーの輻射を小さく抑えられるとい
う特徴を有しているが、マイクロ波やミリ波帯のアナロ
グ回路に用いたときに、その作用効果はさらに大きなも
のとなる。The present invention is characterized in that radiation of unnecessary noise energy can be suppressed to a small level when applied to a digital circuit. The effect is even greater.
【００３３】この種のアナログ回路としては、例えば増
幅器やミキサ、周波数逓減器等があるが、チップと回路
とを接続するためのインダクタンスは非常に小さな値が
要求されている。また、同時に、回路シールドは厳重な
レベルが要求され、これはデジタル回路の比ではない。As this type of analog circuit, for example, there are an amplifier, a mixer, a frequency reducer and the like, but an extremely small inductance is required for connecting a chip and a circuit. At the same time, circuit shields require strict levels, which is not the ratio of digital circuits.
【００３４】本発明のシールド構造は、極めて高いシー
ルド・アイソレーションが得られることから、マイクロ
波やミリ波回路の応用して好適とされる。The shield structure of the present invention is suitable for use in microwave and millimeter wave circuits, since an extremely high shield isolation can be obtained.
【００３５】また、本発明において、抵抗チップやキャ
パシタチップなど他のチップ部品も、同様にして、単体
でシールドされるので好都合である。従来、この種の回
路は、シールドケースの中に収容することが当然とされ
ていたが、このシールドケースは寸法が大きくかつ取付
に手間がかかり、小型化及び経済性の点で問題を有して
いた。Further, in the present invention, other chip components such as a resistor chip and a capacitor chip are similarly advantageously shielded singly. Conventionally, this type of circuit was naturally accommodated in a shield case, but this shield case is large in size and requires a lot of time for installation, and has problems in terms of miniaturization and economy. I was
【００３６】また、本発明においては、フリップチップ
接続により、接続のインダクタンスはミニマムである。
ＧＮＤも信号端子の近くに多数配設できるので、接続イ
ンダクタンスが小さいこととあいまって、インピーダン
ス不連続を小さな値に抑えることができる。In the present invention, the inductance of the connection is minimum due to the flip-chip connection.
Since a large number of GNDs can be arranged near the signal terminals, the impedance discontinuity can be suppressed to a small value in combination with the small connection inductance.
【００３７】[0037]
【発明の効果】以上説明したように、本発明によれば、
最小限の部品で根本的に不要波の放射を抑制できるシー
ルド構造を実現する、という効果を奏する。As described above, according to the present invention,
This has the effect of realizing a shield structure capable of fundamentally suppressing unnecessary wave radiation with a minimum number of components.
【００３８】この理由は、本発明においては、シールド
されたチップと外表面をベタパターンで覆った回路基板
をフリップチップ接続、バンプ接続等の接続手段で最小
のインダクタンスで接続した、ことによる。The reason for this is that, in the present invention, the shielded chip and the circuit board whose outer surface is covered with a solid pattern are connected with a minimum inductance by connection means such as flip chip connection and bump connection.
【００３９】また、本発明によれば、抵抗チップ等の部
品に対してシールドケースを用いず、機器の小型化、及
び軽量化を達成するという効果を奏する。Further, according to the present invention, there is an effect that the size and weight of the device can be reduced without using a shield case for components such as a resistor chip.
【図１】本発明のシールド付き表面実装部品の一実施例
の実装状態を示す断面図である。FIG. 1 is a cross-sectional view showing a mounted state of a shielded surface-mounted component according to an embodiment of the present invention.
【図２】本発明のシールド付き表面部品を抵抗チップに
適用した実施例を示す断面図である。FIG. 2 is a sectional view showing an embodiment in which the shielded surface component of the present invention is applied to a resistance chip.
【図３】本発明のシールド付き表面部品をキャパシタチ
ップに適用した実施例を示す断面図である。FIG. 3 is a sectional view showing an embodiment in which the shielded surface component of the present invention is applied to a capacitor chip.
【図４】従来の表面実装部品の実装状態を示す断面図で
ある。FIG. 4 is a cross-sectional view showing a mounting state of a conventional surface mount component.
【図５】従来技術のシールド構造の断面図である。FIG. 5 is a cross-sectional view of a conventional shield structure.
１ ＩＣダイ（チップ） ２ ＧＮＤ接続バンプ ３ 信号接続バンプ １０ 回路基板 １１ 表面層 １２ 信号層 １３ 裏面層 DESCRIPTION OF SYMBOLS 1 IC die (chip) 2 GND connection bump 3 Signal connection bump 10 Circuit board 11 Surface layer 12 Signal layer 13 Back layer
Claims (2)
プ形態の表面実装部品において、回路形成部分と外部接
続端子部以外をチップの側面も含めて導電性膜で覆い、 さらに回路が形成された面に属するチップ縁端部周囲に
複数の接地接続端子を備え、前記接地接続端子は前記チ
ップ外周の前記導電性膜に接続され、さらにこれらの接
地接続端子の内側の表面に前記外部接続端子を配設した
ことを特徴とするシールド付き表面実装部品。1. A chip-shaped surface mount component such as an LSI, a resistor, and a capacitor, wherein a portion other than a circuit forming portion and an external connection terminal portion is covered with a conductive film including a side surface of the chip, and a surface on which a circuit is formed. A plurality of ground connection terminals around the edge of the chip, the ground connection terminals are connected to the conductive film on the outer periphery of the chip, and the external connection terminals are arranged on the inner surface of these ground connection terminals. A surface-mounted component with a shield, characterized by being provided.
プ形態の表面実装部品において、回路形成部分と外部接
続端子部以外をチップの側面も含めて導電性膜で覆い、 さらに回路が形成された面に属するチップ縁端部周囲に
複数の接地接続端子を備え、前記接地接続端子は前記チ
ップ外周の前記導電性膜に接続され、さらにこれらの接
地接続端子の内側の表面に前記外部接続端子を配設して
なるシールド付き表面実装部品と、 前記シールド付き表面実装部品が搭載される回路基板の
表面は、前記シールド付き表面実装部品の表面に配設さ
れた前記接地接続端子、及び前記接地接続端子の内側表
面に配設された前記外部接続端子のそれぞれに対応する
端子が配設され、このうち接地端子は前記回路基板の表
面を、部品が搭載される端子部を除いて覆う接地導体に
接続され、前記のチップ部品の外周部を覆う前記導電性
膜と前記回路基板板の表面の接地導体とで閉じた電磁シ
ールド構造を形成してなる、ことをを特徴とする表面実
装部品と回路基板のシールド付き表面実装部品。2. In a chip-shaped surface mounting component such as an LSI, a resistor, and a capacitor, a portion other than a circuit forming portion and an external connection terminal portion is covered with a conductive film including a side surface of a chip, and a surface on which a circuit is formed. A plurality of ground connection terminals around the edge of the chip, the ground connection terminals are connected to the conductive film on the outer periphery of the chip, and the external connection terminals are arranged on the inner surface of these ground connection terminals. A surface mounted component with a shield provided, and a surface of a circuit board on which the surface mounted component with a shield is mounted, wherein the ground connection terminal and the ground connection terminal are disposed on the surface of the surface mount component with the shield Terminals corresponding to each of the external connection terminals provided on the inner surface of the circuit board are provided. Of these terminals, the ground terminal is provided on the surface of the circuit board, except for a terminal portion on which components are mounted. And an electromagnetic shield structure closed by the conductive film covering the outer peripheral portion of the chip component and the ground conductor on the surface of the circuit board. Surface mount components and surface mount components with shield for circuit boards.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8181167A JP2940478B2 (en) | 1996-06-21 | 1996-06-21 | Shielded surface mount components |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8181167A JP2940478B2 (en) | 1996-06-21 | 1996-06-21 | Shielded surface mount components |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH1012675A JPH1012675A (en) | 1998-01-16 |
| JP2940478B2 true JP2940478B2 (en) | 1999-08-25 |
Family
ID=16096065
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP8181167A Expired - Fee Related JP2940478B2 (en) | 1996-06-21 | 1996-06-21 | Shielded surface mount components |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2940478B2 (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7186928B2 (en) | 2002-08-01 | 2007-03-06 | Nec Corporation | Electronic device including chip parts and a method for manufacturing the same |
| US9691722B2 (en) | 2014-03-26 | 2017-06-27 | Mitsubishi Electric Corporation | Surface mount high-frequency circuit |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6836022B2 (en) * | 2003-02-13 | 2004-12-28 | Medtronic, Inc. | High voltage flip-chip component package and method for forming the same |
| CN104206043B (en) | 2012-03-07 | 2017-06-09 | 三菱电机株式会社 | High frequency assembly |
| CN112133510B (en) * | 2020-09-04 | 2022-09-20 | 广东风华高新科技股份有限公司 | Resistor with signal-to-noise shielding function and preparation method thereof |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63272059A (en) * | 1987-04-30 | 1988-11-09 | Sumitomo Electric Ind Ltd | Semiconductor device and module composed of board and semiconductor device mounted on it |
| JP3082579B2 (en) * | 1994-08-25 | 2000-08-28 | 松下電器産業株式会社 | Shield case |
-
1996
- 1996-06-21 JP JP8181167A patent/JP2940478B2/en not_active Expired - Fee Related
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7186928B2 (en) | 2002-08-01 | 2007-03-06 | Nec Corporation | Electronic device including chip parts and a method for manufacturing the same |
| US9691722B2 (en) | 2014-03-26 | 2017-06-27 | Mitsubishi Electric Corporation | Surface mount high-frequency circuit |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH1012675A (en) | 1998-01-16 |
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