JP2815078B2 - DC plasma generator - Google Patents

DC plasma generator

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Publication number
JP2815078B2
JP2815078B2 JP4314779A JP31477992A JP2815078B2 JP 2815078 B2 JP2815078 B2 JP 2815078B2 JP 4314779 A JP4314779 A JP 4314779A JP 31477992 A JP31477992 A JP 31477992A JP 2815078 B2 JP2815078 B2 JP 2815078B2
Authority
JP
Japan
Prior art keywords
cathode
plasma
anode
plasma generator
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP4314779A
Other languages
Japanese (ja)
Other versions
JPH06163190A (en
Inventor
正士 神藤
秀則 山梨
彰 池谷
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Yazaki Corp
Original Assignee
Yazaki Corp
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Filing date
Publication date
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Priority to JP4314779A priority Critical patent/JP2815078B2/en
Publication of JPH06163190A publication Critical patent/JPH06163190A/en
Application granted granted Critical
Publication of JP2815078B2 publication Critical patent/JP2815078B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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  • Chemical Vapour Deposition (AREA)

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【産業上の利用分野】本発明は線状乃至棒状の基体の表
面にプラズマ処理を加えるに適した直流プラズマ生成装
置に関し、特に線状乃至棒状の基体の表面にCVD成膜
するに適した直流プラズマ生成装置に関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a DC plasma generator suitable for applying plasma treatment to the surface of a linear or rod-shaped substrate, and more particularly to a DC plasma generator suitable for forming a CVD film on the surface of a linear or rod-shaped substrate. The present invention relates to a plasma generation device.

【0002】[0002]

【従来の技術】プラズマ生成装置は従来からプラズマ加
工やプラズマCVDによる薄膜形成などのために利用さ
れており、直流放電や交流放電、高周波やマイクロ波な
どを磁界と組み合わせて利用する装置が種々実用化され
ている。
2. Description of the Related Art Conventionally, a plasma generation apparatus has been used for plasma processing or thin film formation by plasma CVD, and various apparatuses using a DC discharge, an AC discharge, a high frequency, a microwave, or the like in combination with a magnetic field are practically used. Has been

【0003】[0003]

【発明が解決しようとする課題】ところでプラズマを用
いて基体の表面を処理し、或いは表面に薄膜を形成しよ
うとする場合、従来から多用されているような高周波を
利用して対向電極板の間でプラズマを発生する装置は、
平板状の基体の表面を処理するに適してはいるが線状乃
至棒状の基体の表面を均一に処理するのは困難であっ
て、しかも高周波雑音の害が大きいという問題がある。
In the case where the surface of a substrate is treated by using plasma or a thin film is to be formed on the surface, plasma is applied between opposed electrode plates by using a high frequency as conventionally used. The device that generates
Although suitable for treating the surface of a flat substrate, it is difficult to uniformly treat the surface of a linear or rod-shaped substrate, and the problem of high frequency noise is great.

【0004】また高周波電流を管状放電室の外部に巻か
れたコイルに流して管状放電室の軸心部にプラズマを発
生する装置では高周波雑音の問題があるうえ、線状乃至
棒状の基体が絶縁物であるときは基体の表面を処理する
ことはできても、基体が導電体であるとプラズマへの高
周波電力の注入量が変わり易く、安定なプラズマが維持
し難くなるという問題もある。
[0004] Further, in a device in which a high-frequency current is caused to flow through a coil wound outside the tubular discharge chamber to generate plasma at the axial center of the tubular discharge chamber, there is a problem of high-frequency noise, and a linear or rod-shaped base is insulated. When the substrate is an object, the surface of the substrate can be treated, but when the substrate is a conductor, the amount of high-frequency power injected into the plasma tends to change, and there is a problem that stable plasma is difficult to maintain.

【0005】更にまた、基体が導電性を有するものであ
るとそれ自体が放電電極となって損傷を受けやすく、特
に長尺の線状乃至棒状の基体の表面に対してプラズマを
均一に接触させることは難しいから、基体にバイアス電
圧を印加する等の損傷の軽減をはかる措置が必要とな
る。また、プラズマの拡散によるエネルギー損失を減ら
すために外部磁界を働かせることが必要となり、装置自
体が大型化して高価なものとなる等の問題もある。
Further, if the substrate has conductivity, the substrate itself becomes a discharge electrode and is susceptible to damage. In particular, plasma is uniformly contacted with the surface of a long linear or rod-shaped substrate. Therefore, it is necessary to take measures such as applying a bias voltage to the substrate to reduce damage. In addition, it is necessary to apply an external magnetic field to reduce energy loss due to plasma diffusion, and there is a problem that the apparatus itself becomes large and expensive.

【0006】そこで本発明は、基体の性状の如何にかか
わらず、線状乃至棒状の基体の表面に対して均一な密度
のプラズマを接触させることができ、従って線状乃至棒
状の基体の表面にプラズマCVDによる均一な薄膜を効
率よく形成することができるプラズマ生成装置を提供し
ようとするものである。
Accordingly, the present invention is capable of contacting a linear or rod-shaped substrate surface with a plasma having a uniform density regardless of the properties of the substrate. An object of the present invention is to provide a plasma generating apparatus capable of efficiently forming a uniform thin film by plasma CVD.

【0007】[0007]

【課題を解決するための手段】かかる目的を達成するた
め、本発明の装置は密閉空間内に筒形網状アノードをよ
り大径の筒形カソードで囲んで同軸的に配置し、該アノ
ードと該カソードとの間に直流電圧を印加するように構
成したものである。
In order to achieve the above object, the apparatus of the present invention has a cylindrical mesh anode surrounded by a larger-diameter cylindrical cathode and is coaxially arranged in a closed space, and the anode is connected to the anode. It is configured such that a DC voltage is applied between the cathode and the cathode.

【0008】本発明の直流プラズマ生成装置におけるカ
ソードは冷陰極であってもまた熱陰極であってもよい。
カソードが熱陰極であるときには、カソードが高融点の
発熱電線を備えたものであることが好ましい。かかるカ
ソードは、例えば図1に示すように、2個の対向した円
環状電極1aの間に複数の発熱電線1bを張り渡して筒
形に形成したものであり、加熱電流によって高温に加熱
されて熱電子を放出する。かかる発熱電線の径、長さ、
本数等は、用いるカソード電源の容量に合わせて適宜選
択することができる。また発熱電線の材質は、通常タン
グステン、タングステン合金、炭素などを用いることが
できるが、特に限定されない。
The cathode in the DC plasma generator of the present invention may be a cold cathode or a hot cathode.
When the cathode is a hot cathode, it is preferable that the cathode be provided with a high melting point heating wire. For example, as shown in FIG. 1, such a cathode is formed in a tubular shape by stretching a plurality of heating wires 1b between two opposed annular electrodes 1a, and is heated to a high temperature by a heating current. Emit thermoelectrons. The diameter, length,
The number and the like can be appropriately selected according to the capacity of the cathode power supply to be used. Further, the material of the heating wire can be usually tungsten, a tungsten alloy, carbon, or the like, but is not particularly limited.

【0009】なお図1のカソードは、軸に平行な加熱電
流による磁界が方位角方向に発生して半径方向にプラズ
マ粒子が損失することを抑制するために、効率よくプラ
ズマを発生させることができる。しかし加熱電流が同一
方向に流れるために発熱電線に半径方向の電磁力による
張力が加わって発熱電線の寿命が短くなる傾向がある
が、例えば図2又は図3に示すように発熱電線を配列し
て隣合う発熱電線の電流方向が交互となるようにすれ
ば、このような現象を防止することができる。そしてこ
の場合も、加熱電流により発生する磁界はプラズマの損
失を抑制することができる。
The cathode of FIG. 1 can efficiently generate plasma in order to suppress the generation of a magnetic field due to a heating current parallel to the axis in the azimuthal direction and the loss of plasma particles in the radial direction. . However, since the heating current flows in the same direction, tension is applied to the heating wires by the electromagnetic force in the radial direction, which tends to shorten the life of the heating wires. For example, as shown in FIG. 2 or FIG. Such a phenomenon can be prevented by making the current directions of the adjacent heating wires alternate. Also in this case, the magnetic field generated by the heating current can suppress the loss of plasma.

【0010】また本発明の直流プラズマ生成装置におけ
るアノードは、例えば図4に示すように、カソードに用
いた円環状電極より小径の円環体2a、2aを対向さ
せ、その間に導電性繊維の網状体2bを巻き付けて筒形
に形成したものなどを用いることができる。またアノー
ドを構成する材料の材質は特に限定されないが、装置を
CVDに用いる場合には使用する原料ガスに対して耐食
性を有する金属から形成されることが望ましい。
The anode in the DC plasma generating apparatus of the present invention is, for example, as shown in FIG. 4, in which annular bodies 2a, 2a smaller in diameter than the annular electrode used for the cathode are opposed to each other, and a mesh of conductive fibers is interposed therebetween. A body formed by winding the body 2b into a cylindrical shape or the like can be used. The material of the material constituting the anode is not particularly limited. However, when the apparatus is used for CVD, it is desirable that the anode be formed of a metal having corrosion resistance to the source gas used.

【0011】本発明の直流プラズマ生成装置において筒
形アノードと筒形カソードとは、密閉でき且つ真空とす
ることができる密閉容器中に、互いに絶縁した状態でア
ノードがカソードの内側に囲まれるよう、図5に示すよ
うに同軸的に配置される。この際のアノードとカソード
の間隔は、放電用電源3の印加電圧に適合するように適
宜選択することができ、通常はアノード等の直径に関係
なく5〜10mm程度とすることができる。なお、4は加
熱電源である。
In the DC plasma generating apparatus of the present invention, the cylindrical anode and the cylindrical cathode are sealed in a sealed container that can be sealed and evacuated so that the anode is enclosed inside the cathode while being insulated from each other. They are arranged coaxially as shown in FIG. At this time, the distance between the anode and the cathode can be appropriately selected so as to be adapted to the voltage applied to the discharge power supply 3, and can be usually about 5 to 10 mm regardless of the diameter of the anode or the like. Reference numeral 4 denotes a heating power supply.

【0012】上記の密閉容器は少なくも10-6Torr以下
の真空圧に耐えることができ、またアノードの中心軸位
置に線状乃至棒状の基体を支持する部材が設けてあり、
更にCVD成膜用のガス材料を導入する手段を備えるほ
か、かかるガスに対して充分な耐食性を有する材料で形
成されていることが望ましい。
The above-mentioned closed container can withstand a vacuum pressure of at least 10 -6 Torr or less, and a member for supporting a linear or rod-shaped substrate is provided at the center axis position of the anode.
Further, it is desirable to provide a means for introducing a gas material for CVD film formation and to be formed of a material having sufficient corrosion resistance to such a gas.

【0013】[0013]

【作用】本発明の直流プラズマ生成装置は、必要に応じ
て通電加熱されたカソードから熱電子が放出されるが、
この熱電子はアノードに印加された直流電圧によって加
速され、筒形アノードの軸心付近に集中して雰囲気ガス
を電離し、端部が開放された柱状の直流放電プラズマが
得られる。かかるプラズマは高密度であって長さ方向に
均一な密度で分布しているから、線状乃至棒状の基体の
表面に対して均一な処理を施すに適しており、プラズマ
CVDによる薄膜を均一に形成するに好適である。
According to the DC plasma generating apparatus of the present invention, thermoelectrons are emitted from the heated cathode as necessary.
The thermoelectrons are accelerated by the DC voltage applied to the anode, and are concentrated near the axis of the cylindrical anode to ionize the atmospheric gas, thereby obtaining a columnar DC discharge plasma having an open end. Such a plasma is dense and is distributed at a uniform density in the longitudinal direction, so that it is suitable for performing a uniform treatment on the surface of a linear or rod-like substrate, and a uniform thin film formed by plasma CVD is uniformly formed. It is suitable for forming.

【0014】[0014]

【実施例】【Example】

(第1実施例)径70mmのステンレス鋼の円環状電極1
a、1aの間に径0.2mmで長さ50mmのタングステン
フィラメント1bを24本用いて円筒形状となるよう均
等に張り渡して形成した図1のような構造のカソード1
を用い、また径50mmのステンレス鋼の円環体2a、2
aの間に60メッシュのステンレス鋼の金網2bを長さ
50mmとなるよう巻き付けて形成した図4のような構造
のアノード2を、カソード1の内側に図5のように同軸
的に組み合わせて耐食性の内張りを有する真空容器内に
設置し、放電用電源3及び加熱電源4と接続して、本発
明のプラズマ生成装置を組み立てた。
(First Embodiment) Stainless steel annular electrode 1 having a diameter of 70 mm
a, a cathode 1 having a structure as shown in FIG. 1 formed by using 24 tungsten filaments 1b each having a diameter of 0.2 mm and a length of 50 mm and being uniformly stretched so as to form a cylindrical shape.
And a stainless steel ring 2a, 50 mm in diameter,
The anode 2 having a structure as shown in FIG. 4 formed by winding a 60-mesh stainless steel wire net 2b to a length of 50 mm between a and a is coaxially assembled inside the cathode 1 as shown in FIG. Was installed in a vacuum vessel having a lining, and connected to a discharge power source 3 and a heating power source 4 to assemble a plasma generating apparatus of the present invention.

【0015】容器内を真空としたのち水素を導入して
0.06Torrとし、カソードに合計120Aの電流を流
してフィラメントを約2500℃まで加熱するととも
に、カソードに対して25Vの正電圧をアノードに印加
してアノードの内部空間にプラズマを発生させた。そし
てラングミュア探針法によって軸心位置から半径方向に
プラズマ密度を測定したところ、図6のような結果が得
られた。
After the inside of the container is evacuated, hydrogen is introduced to 0.06 Torr, a current of 120 A in total is applied to the cathode to heat the filament to about 2500 ° C., and a positive voltage of 25 V to the cathode is applied to the anode. By applying the voltage, plasma was generated in the internal space of the anode. When the plasma density was measured in the radial direction from the axial position by the Langmuir probe method, the result as shown in FIG. 6 was obtained.

【0016】(第2実施例)タングステンフィラメント
を用いる代わりに導電性炭素繊維(日本石油、グラノッ
クスXN40)24本を第1実施例と同様に円筒形状と
なるよう均等に張り渡して形成したカソードを用いた他
は、第1実施例と全く同様にしてプラズマ生成装置を組
み立てた。この装置を用いて第1実施例と同様にしてア
ノードの内部空間のプラズマ密度を測定したところ、第
1実施例と同様な結果が得られた。
(Second Embodiment) A cathode in which 24 conductive carbon fibers (Nippon Oil Co., Ltd., Granox XN40) are uniformly stretched so as to have a cylindrical shape as in the first embodiment, instead of using a tungsten filament. A plasma generator was assembled in exactly the same manner as in the first embodiment, except that the plasma generator was used. When the plasma density in the internal space of the anode was measured using this apparatus in the same manner as in the first embodiment, the same results as in the first embodiment were obtained.

【0017】(第3実施例)径70mmのステンレス鋼の
円環状電極6aと同じく径70mmのステンレス鋼の円環
状電極6bとの間に径0.2mmで長さ50mmのタングス
テンフィラメント6dを8本用いて円筒形状となるよう
均等間隔に張り渡し、また円環状電極6bより更に10
mmだけ外側に設けた同じく径70mmのステンレス鋼の円
環状電極6cと円環状電極6aとの間に径0.2mmで長
さ60mmのタングステンフィラメント6eを8本用い、
フィラメント6eを円環状電極6bとは接触しないよう
に外径2mm、内径1mmのセラミック絶縁管6fに通して
円筒形状となるよう先のフィラメント6dの中間に均等
間隔に配置して張り渡し、図3のような構造のカソード
6を形成した。そして図4のような構造のアノードを組
み合わせ、円環状電極6bと円環状電極6cとの間に加
熱電源を接続して、第1実施例と同様なプラズマ生成装
置を組み立てた。
(Third Embodiment) Eight tungsten filaments 6d having a diameter of 0.2 mm and a length of 50 mm are provided between a stainless steel annular electrode 6a having a diameter of 70 mm and a stainless steel annular electrode 6b having a diameter of 70 mm. To form a cylindrical shape at an equal interval, and 10 times more than the annular electrode 6b.
using eight tungsten filaments 6e having a diameter of 0.2 mm and a length of 60 mm between an annular electrode 6c of stainless steel also having a diameter of 70 mm and an annular electrode 6a having a diameter of 70 mm,
As shown in FIG. The cathode 6 having the structure as described above was formed. Then, an anode having a structure as shown in FIG. 4 was combined, a heating power source was connected between the annular electrode 6b and the annular electrode 6c, and a plasma generating apparatus similar to that of the first embodiment was assembled.

【0018】容器内を真空としたのち水素を導入して1
Torrとし、カソードに合計40Aの電流を流してフィラ
メントを約2500℃まで加熱するとともに、カソード
に対して25Vの正電圧をアノードに印加してアノード
の内部空間にプラズマを発生させた。そしてラングミュ
ア探針法によって軸心位置のプラズマ密度を測定したと
ころ、109 /cm3 の値が得られた。
After the inside of the container is evacuated, hydrogen is introduced to
At Torr, a current of 40 A was passed through the cathode to heat the filament to about 2500 ° C., and a positive voltage of 25 V was applied to the anode to the anode to generate plasma in the internal space of the anode. When the plasma density at the axial center was measured by the Langmuir probe method, a value of 10 9 / cm 3 was obtained.

【0019】[0019]

【発明の効果】本発明のプラズマ生成装置は中空で筒形
の網状アノードをより大径の筒形カソードで囲んで同軸
的に配置したから、アノード内の空間には長さ方向に均
一な密度のプラズマを発生させることができる。従って
その軸心位置に装着した線状乃至棒状の基体の表面に対
して均等なプラズマ処理を加えることができ、しかも基
体が導電性であるか非導電性であるかを問わず任意の材
質でも何ら問題なくCVDを含むプラズマ処理ができる
利点がある。
According to the plasma generating apparatus of the present invention, a hollow cylindrical reticulated anode is coaxially arranged by surrounding it with a larger-diameter cylindrical cathode, so that the space in the anode has a uniform density in the longitudinal direction. Can be generated. Therefore, a uniform plasma treatment can be applied to the surface of the linear or rod-shaped substrate mounted at the axial position, and any material can be used regardless of whether the substrate is conductive or non-conductive. There is an advantage that plasma processing including CVD can be performed without any problem.

【図面の簡単な説明】[Brief description of the drawings]

【図1】本発明のプラズマ生成装置におけるカソードの
構造の例を示す図である。
FIG. 1 is a diagram showing an example of a structure of a cathode in a plasma generation device of the present invention.

【図2】本発明のプラズマ生成装置におけるカソードの
構造の他の例を示す図である。
FIG. 2 is a diagram showing another example of the structure of the cathode in the plasma generation device of the present invention.

【図3】本発明のプラズマ生成装置におけるカソードの
構造の別な例を示す図である。
FIG. 3 is a diagram showing another example of the structure of the cathode in the plasma generation device of the present invention.

【図4】本発明のプラズマ生成装置におけるアノードの
構造の例を示す図である。
FIG. 4 is a diagram showing an example of the structure of an anode in the plasma generation device of the present invention.

【図5】本発明のプラズマ生成装置におけるアノードと
カソードとの組み合わせ及び配線を示す説明図である。
FIG. 5 is an explanatory diagram showing a combination and wiring of an anode and a cathode in the plasma generation device of the present invention.

【図6】本発明のプラズマ生成装置において生成するプ
ラズマの密度分布を示すグラフである。
FIG. 6 is a graph showing a density distribution of plasma generated in the plasma generation apparatus of the present invention.

【符号の説明】[Explanation of symbols]

1 カソード 1a 円環状電極 1b 発熱電線 2 アノード 2a 円環体 2b 網状体 3 放電用電源 4 加熱電源 5 カソード 5a 円環体 5b 発熱電線 6 カソード 6a、6b、6c 円環状電極 6d、6e 発熱電線 6f セラミック絶縁管 DESCRIPTION OF SYMBOLS 1 Cathode 1a Toroidal electrode 1b Heating wire 2 Anode 2a Toroidal body 2b Reticulated body 3 Discharge power supply 4 Heating power supply 5 Cathode 5a Toroidal body 5b Heating wire 6 Cathode 6a, 6b, 6c Toroidal electrode 6d, 6e Heating wire 6f Ceramic insulation tube

───────────────────────────────────────────────────── フロントページの続き (56)参考文献 特開 昭60−88955(JP,A) 特開 平3−24271(JP,A) 実開 昭58−68958(JP,U) (58)調査した分野(Int.Cl.6,DB名) H05H 1/46 C23C 16/50──────────────────────────────────────────────────続 き Continuation of the front page (56) References JP-A-60-88955 (JP, A) JP-A-3-24271 (JP, A) Japanese Utility Model 1983-68958 (JP, U) (58) Survey Field (Int.Cl. 6 , DB name) H05H 1/46 C23C 16/50

Claims (4)

(57)【特許請求の範囲】(57) [Claims] 【請求項1】 密閉空間内に筒形網状アノードをより大
径の筒形カソードで囲んで同軸的に配置し、該アノード
と該カソードとの間に直流電圧を印加するように構成し
たことを特徴とする直流プラズマ生成装置。
1. A structure in which a cylindrical reticulated anode is coaxially arranged in a closed space by surrounding it with a larger-diameter cylindrical cathode, and a DC voltage is applied between the anode and the cathode. Characteristic DC plasma generator.
【請求項2】 カソードが冷陰極である請求項1記載の
直流プラズマ生成装置。
2. The DC plasma generator according to claim 1, wherein the cathode is a cold cathode.
【請求項3】 カソードが熱陰極である請求項1記載の
直流プラズマ生成装置。
3. The DC plasma generator according to claim 1, wherein the cathode is a hot cathode.
【請求項4】 カソードが発熱電線を備えている請求項
3記載の直流プラズマ生成装置。
4. The DC plasma generator according to claim 3, wherein the cathode is provided with a heating wire.
JP4314779A 1992-11-25 1992-11-25 DC plasma generator Expired - Fee Related JP2815078B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4314779A JP2815078B2 (en) 1992-11-25 1992-11-25 DC plasma generator

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4314779A JP2815078B2 (en) 1992-11-25 1992-11-25 DC plasma generator

Publications (2)

Publication Number Publication Date
JPH06163190A JPH06163190A (en) 1994-06-10
JP2815078B2 true JP2815078B2 (en) 1998-10-27

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Country Link
JP (1) JP2815078B2 (en)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5116999B2 (en) * 2006-06-27 2013-01-09 株式会社ピュアロンジャパン Plasma generator
JP5197036B2 (en) * 2008-01-23 2013-05-15 株式会社ピュアロンジャパン Plasma generator
CN108551716A (en) * 2018-07-06 2018-09-18 中国科学技术大学 A kind of plasma generating apparatus

Also Published As

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JPH06163190A (en) 1994-06-10

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