JP2757949B2 - Chip electronic components - Google Patents

Chip electronic components

Info

Publication number
JP2757949B2
JP2757949B2 JP5136481A JP13648193A JP2757949B2 JP 2757949 B2 JP2757949 B2 JP 2757949B2 JP 5136481 A JP5136481 A JP 5136481A JP 13648193 A JP13648193 A JP 13648193A JP 2757949 B2 JP2757949 B2 JP 2757949B2
Authority
JP
Japan
Prior art keywords
layer
side electrode
electrode layer
chip
metal particles
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP5136481A
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Japanese (ja)
Other versions
JPH06325904A (en
Inventor
善一 玉木
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Rohm Co Ltd
Original Assignee
Rohm Co Ltd
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Filing date
Publication date
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Priority to JP5136481A priority Critical patent/JP2757949B2/en
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Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【産業上の利用分野】本発明は、チップ抵抗器、チップ
コンデンサ等のチップ状電子部品に関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a chip-like electronic component such as a chip resistor and a chip capacitor.

【0002】[0002]

【従来の技術】従来のチップ抵抗器、チップコンデンサ
等のチップ状電子部品は、チップ本体の両端部に内部の
電子素子の通電端子となる側面電極層が設けられてい
る。従来より、上記側面電極層としては、銀、パラジウ
ム等の金属を含む導体ペーストを塗布焼成した金属系の
ものが一般的であった。また、上記側面電極層の表面に
は、実装時の半田付けをより強固なものとするために、
ニッケル、半田等のメッキ層が設けられていた。
2. Description of the Related Art Conventional chip-shaped electronic components such as chip resistors and chip capacitors have side electrode layers provided at both ends of a chip main body as current-carrying terminals of internal electronic elements. Conventionally, as the side electrode layer, a metal-based material obtained by applying and firing a conductive paste containing a metal such as silver or palladium has been generally used. Further, on the surface of the side electrode layer, in order to make soldering at the time of mounting more robust,
A plating layer of nickel, solder, or the like was provided.

【0003】近年、電子技術の進歩につれて高精度の電
子部品が要求されるようになり、上記チップ状電子部品
においてもより精度の高いものが要求されるようになっ
てきている。しかしながら、例えばチップ抵抗器は、セ
ラミックス等の絶縁性基板上に設けられた金属酸化物よ
り形成される抵抗体層が上記金属系の側面電極層を設け
る際の高温により再酸化等されてしまい、抵抗体層のシ
ート抵抗値が変化してしまう問題があった。
[0003] In recent years, with the advance of electronic technology, high-precision electronic components have been required, and the chip-type electronic components have also been required to have higher precision. However, for example, in a chip resistor, a resistor layer formed of a metal oxide provided on an insulating substrate such as a ceramic is re-oxidized by a high temperature when the metal-based side electrode layer is provided, There is a problem that the sheet resistance value of the resistor layer changes.

【0004】すなわち、従来のチップ抵抗器は、図2に
示すように、絶縁性基板1上の両端に一対の表面電極層
4aが設けられ、該一対の表面電極層4aに跨るように
抵抗体層2が設けられ、該抵抗体層2をトリミングして
抵抗値を所望の値に調整し、上記抵抗体層2を覆うよう
に保護層3が設けられた後に絶縁性基板1の両端部に金
属系の側面電極層7が塗布焼成されて設けられるため
に、上記でトリミングにより調整された抵抗値が側面電
極層形成工程の焼成時の熱(800℃程度以上)により
所望の抵抗値にズレが生じてしまうのである。よって、
得られるチップ抵抗器の抵抗値は、どうしても所望の値
からの僅かな誤差が生じていた。
That is, in a conventional chip resistor, as shown in FIG. 2, a pair of surface electrode layers 4a is provided on both ends of an insulating substrate 1, and a resistor is provided so as to extend over the pair of surface electrode layers 4a. A layer 2 is provided. The resistor layer 2 is trimmed to adjust a resistance value to a desired value. After a protective layer 3 is provided so as to cover the resistor layer 2, both ends of the insulating substrate 1 are provided. Since the metal-based side electrode layer 7 is provided by being applied and fired, the resistance value adjusted by the trimming described above is shifted to a desired resistance value by heat (about 800 ° C. or more) during firing in the side electrode layer formation step. Will occur. Therefore,
The resistance of the obtained chip resistor had a slight error from the desired value.

【0005】そこで、近年になって側面電極層としてエ
ポキシ系樹脂等の熱硬化性樹脂に銀等の金属粒子を配合
したものを加熱硬化させて形成する樹脂系の電極層が提
案されている。このような樹脂系の電極材は、150℃
程度という比較的低い温度で硬化形成できるために、上
記トリミング後の抵抗値のズレの問題はほぼ解消され
る。
Therefore, in recent years, a resin-based electrode layer formed by heating and curing a mixture of metal particles such as silver in a thermosetting resin such as an epoxy resin has been proposed as a side electrode layer. Such a resin-based electrode material has a temperature of 150 ° C.
Since the hardening can be performed at a relatively low temperature, the problem of the deviation of the resistance value after the trimming is almost eliminated.

【0006】[0006]

【発明が解決しようとする課題】しかしながら、図3に
示すように、チップ抵抗器に上記のような樹脂中に金属
粒子を混入した樹脂系の側面電極層15を適用しようと
する場合、樹脂中の金属粒子の配合比が高くなり過ぎる
と金属粒子が絶縁性基板1との密着性を低下させるため
に絶縁性基板1と側面電極層15との間に隙間が生じた
り、側面電極層15の剥離又は脱落が生じたりする問題
がある。
However, as shown in FIG. 3, when a resin-based side electrode layer 15 in which metal particles are mixed in a resin as described above is to be applied to a chip resistor, it is difficult to use a resin. If the compounding ratio of the metal particles becomes too high, the metal particles reduce the adhesion to the insulating substrate 1 so that a gap is formed between the insulating substrate 1 and the side electrode layer 15, There is a problem of peeling or falling off.

【0007】一方、樹脂中の金属粒子の配合比を低くす
ると絶縁性基板1との密着性は改善されるものの、側面
電極層15の表面に半田付け等による実装強度を高める
ために設けられるニッケル、半田等のメッキ層6との密
着性が低下し、メッキ層6が均一に形成できなかった
り、メッキ層6が形成されても剥離が生じてしまう問題
がある(図3参照)。
On the other hand, when the mixing ratio of the metal particles in the resin is reduced, the adhesion to the insulating substrate 1 is improved, but the nickel provided on the surface of the side electrode layer 15 to increase the mounting strength by soldering or the like is provided. In addition, there is a problem that the adhesion to the plating layer 6 such as solder is reduced, and the plating layer 6 cannot be formed uniformly, or peeling occurs even if the plating layer 6 is formed (see FIG. 3).

【0008】このように、樹脂系の側面電極層を用いる
場合には、金属粒子の配合比が多くても少なくてもいけ
ないと言う相反する要因があり、樹脂と金属粒子との配
合調整が極めて困難で、仮令絶縁性基板及びメッキ層と
の密着性のバランスがとれるよう配合をしたとしても十
分な密着性は得られず、こうして得られる製品も必ずし
も十分な信頼性があるものとはいえなかった。
As described above, when the resin-based side electrode layer is used, there is a contradictory factor that the mixing ratio of the metal particles must be large or small, and the mixing adjustment of the resin and the metal particles is extremely difficult. It is difficult, and even if it is blended so that the adhesion between the temporary insulating substrate and the plating layer can be balanced, sufficient adhesion cannot be obtained, and the product obtained in this manner is not necessarily reliable enough. Was.

【0009】本発明は、上記問題を解消し、剥離、脱落
等の生じることのない高信頼性の樹脂系の内部電極層を
有するチップ状電子部品を提供することを目的とする。
An object of the present invention is to solve the above problems and to provide a chip-shaped electronic component having a highly reliable resin-based internal electrode layer without peeling, falling off, or the like.

【0010】[0010]

【課題を解決するための手段】本発明者は、上記技術の
現状に鑑み鋭意研究を重ねた結果、側面電極層中におけ
る金属粒子の密度をチップ本体側に低く、メッキ層側に
高くしたときは、側面電極層の密着性がチップ本体、メ
ッキ層とも良好となり、樹脂系電極層を有するチップ状
電子部品において側面電極層の剥離及びメッキ層の剥離
が防止し得ることを見出した。
Means for Solving the Problems The present inventor has conducted intensive studies in view of the above-mentioned state of the art, and as a result, when the density of the metal particles in the side electrode layer is reduced toward the chip body and increased toward the plating layer. Found that the adhesiveness of the side electrode layer was improved in both the chip body and the plating layer, and that the peeling of the side electrode layer and the peeling of the plating layer could be prevented in a chip-shaped electronic component having a resin-based electrode layer.

【0011】即ち、本発明は、チップ本体側面に側面電
極層を有するチップ状電子部品において、上記側面電極
層が合成樹脂及び金属粒子を含有し、該金属粒子が上記
側面電極層の表層に高密度、下層に低密度となるように
分布していることを特徴とするチップ状電子部品に係る
ものである。
That is, the present invention relates to a chip-shaped electronic component having a side electrode layer on the side surface of a chip body, wherein the side electrode layer contains a synthetic resin and metal particles, and the metal particles are formed on the surface layer of the side electrode layer. The present invention relates to a chip-shaped electronic component characterized by being distributed so as to have a low density in a lower layer.

【0012】本発明において、側面電極層は、樹脂と金
属粒子とを含有してなる導電性樹脂からなる。上記樹脂
としては、例えばエポキシ系樹脂、フェノール系樹脂、
ポリイミド系樹脂等の熱硬化性樹脂、紫外線硬化性樹脂
等を広く使用できる。上記熱硬化性樹脂の硬化温度とし
ては、例えば抵抗値の変化を低減するためには400℃
程度以下とされるのが好ましく、200℃程度以下とさ
れるのがより好ましい。
In the present invention, the side electrode layer is made of a conductive resin containing a resin and metal particles. As the resin, for example, an epoxy resin, a phenol resin,
A thermosetting resin such as a polyimide resin, an ultraviolet curable resin, and the like can be widely used. The curing temperature of the thermosetting resin is, for example, 400 ° C. in order to reduce a change in resistance value.
About 200 ° C. or less, and more preferably about 200 ° C. or less.

【0013】また、上記金属粒子としては、金属類の粒
子の1種もしくは2種以上を特に限定されることなく広
く使用することができ、より具体的には、例えば銀、ニ
ッケル、銅等の粒子を挙げることができる。
As the metal particles, one or more types of metal particles can be widely used without any particular limitation. More specifically, for example, silver, nickel, copper, etc. Particles may be mentioned.

【0014】本発明において、上記側面電極層の最下
層、すなわちチップ本体との接合層における金属粒子の
配合率は、60重量%程度未満とされるのがよく、0重
量%に近づくにつれチップ本体との密着力が増大され
る。上記金属粒子の配合率が60重量%以上となると
着性が不十分となり好ましくない。
In the present invention, the blending ratio of the metal particles in the lowermost layer of the side electrode layer, ie, the bonding layer with the chip body, is preferably less than about 60% by weight, and as the weight approaches 0% by weight, the chip body becomes smaller. And the adhesive force between them is increased. If the mixing ratio of the metal particles is 60% by weight or more, the adhesion is insufficient, which is not preferable.

【0015】また、本発明において、側面電極層の表
層、すなわちメッキ層との接合層における金属粒子の配
合率は、60〜80重量%程度とされるのがよい。上記
範囲を下回るときはメッキ層との密着性が不十分とな
り、反対に上回るときは樹脂成分が少なすぎて層形成が
困難となる。
In the present invention, the mixing ratio of the metal particles in the surface layer of the side electrode layer, that is, the bonding layer with the plating layer is preferably about 60 to 80% by weight. When the ratio is below the above range, the adhesion to the plating layer becomes insufficient. On the other hand, when the ratio is above the range, the resin component is too small to form the layer.

【0016】本発明では、外部電極層中の金属粒子を上
記配合率の範囲で分布するよう適宜混入すればよく、最
下層中と表層中の金属粒子の配合率がそれぞれ上記範囲
に属すればその間の層中の金属粒子の配合率は特に問わ
れない。
In the present invention, the metal particles in the external electrode layer may be appropriately mixed so as to be distributed within the above-mentioned range of the mixing ratio. If the mixing ratio of the metal particles in the lowermost layer and the mixing ratio of the metal particles in the surface layer belong to the above-mentioned ranges, respectively. The mixing ratio of the metal particles in the layer between them is not particularly limited.

【0017】上記のように本発明における側面電極層を
設ける方法としては、例えば2層以上の多層構造として
設ければよい。最下層に金属粒子の密度の小さい樹脂層
を形成し、表層に金属粒子の密度の高い樹脂層を形成し
て側面電極層を設ければよいのである。
As described above, the method of providing the side electrode layer in the present invention may be, for example, a multilayer structure having two or more layers. It is only necessary to form a resin layer having a low density of metal particles on the lowermost layer, form a resin layer having a high density of metal particles on the surface layer, and provide the side electrode layer.

【0018】[0018]

【作用】樹脂系の側面電極層を、セラミックス等のチッ
プ本体との接合面側に該チップ本体と密着性の高い樹脂
成分の配合比が高く、メッキ層との接合面側に該メッキ
層と密着性の高い金属粒子の配合比が高くなるように配
しているので、上記側面電極層はチップ本体及びメッキ
層の両方共に良好な密着状態を保つことができる。
The resin side electrode layer has a high mixing ratio of a resin component having high adhesion to the chip body such as ceramics on the bonding surface side with the chip body, and the plating layer on the bonding surface side with the plating layer. Since the mixing ratio of the metal particles having high adhesion is arranged to be high, the side electrode layer can maintain a good adhesion state to both the chip body and the plating layer.

【0019】[0019]

【実施例】以下、本発明の実施例をチップ抵抗器を例
に、図面を参照しつつ説明するが、本発明はこれに限定
されることはない。
DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, embodiments of the present invention will be described with reference to the drawings using a chip resistor as an example, but the present invention is not limited to this.

【0020】図1は、本発明のチップ抵抗器の断面図を
示す。図1において、符号1は絶縁性基板を、2は抵抗
体層を、3は保護層を、4aは表面電極層を、4bは裏
面電極層を、5は側面電極層、6はメッキ層を示す。
FIG. 1 is a sectional view of a chip resistor according to the present invention. In FIG. 1, reference numeral 1 denotes an insulating substrate, 2 denotes a resistor layer, 3 denotes a protective layer, 4a denotes a front electrode layer, 4b denotes a back electrode layer, 5 denotes a side electrode layer, and 6 denotes a plating layer. Show.

【0021】本実施例において、上記抵抗体層2、保護
層3、表面電極層4a及び裏面電極層4bは、従来のチ
ップ抵抗器で用いられる方法と特に変わりなく設けるこ
とができ、例えば次のようにして設けられる。絶縁性基
板1の表面の両端に対向するように一対の表面電極層4
aを印刷・焼成により形成する。ここでは絶縁性基板1
の裏面に上記電極層4と対称となる位置に印刷・焼成に
より裏面電極層4bを設けてある。ついで、上記一対の
表面電極層4a間に両端が一部重なるように抵抗体層2
を印刷・焼成により形成する。そして、抵抗体層2をト
リミングして抵抗値調整後に抵抗体層2を覆うように保
護層3が設けられ、チップ本体が形成される。
In this embodiment, the resistor layer 2, the protective layer 3, the front electrode layer 4a and the back electrode layer 4b can be provided without any particular difference from the method used in a conventional chip resistor. It is provided in such a manner. A pair of surface electrode layers 4 are provided so as to face both ends of the surface of the insulating substrate 1.
a is formed by printing and baking. Here, the insulating substrate 1
The back surface electrode layer 4b is provided on the back surface of the substrate by printing and baking at a position symmetrical to the electrode layer 4. Next, the resistor layer 2 is formed so that both ends partially overlap between the pair of surface electrode layers 4a.
Is formed by printing and baking. Then, after the resistor layer 2 is trimmed and the resistance value is adjusted, a protective layer 3 is provided so as to cover the resistor layer 2, and a chip body is formed.

【0022】このようにして形成されたチップ本体3の
両側面には、樹脂系の側面電極層5が設けられる。上記
側面電極層5は、下層5a及び上層5bからなる。
On both sides of the chip body 3 formed in this way, resin-based side electrode layers 5 are provided. The side electrode layer 5 includes a lower layer 5a and an upper layer 5b.

【0023】本実施例では、まず、下層5aとして、硬
化温度150℃のエポキシ系熱硬化型樹脂ペーストに金
属粒子30重量%程度を混合調整した導電性樹脂を塗布
し、150℃で10分加熱して仮乾燥した。
In this embodiment, first, as the lower layer 5a, a conductive resin prepared by mixing and adjusting about 30% by weight of metal particles is applied to an epoxy-based thermosetting resin paste having a curing temperature of 150 ° C., and heated at 150 ° C. for 10 minutes. And temporarily dried.

【0024】そして、上記下層5aの上に、上層5bと
して、エポキシ系熱硬化型樹脂ペーストに金属粒子70
重量%程度を混合調整した導電性樹脂を塗布し、150
℃で10分加熱後、更に200℃で30分加熱して硬化
させ側面電極層5を設けた。
On the lower layer 5a, as an upper layer 5b, metal particles 70 are added to an epoxy-based thermosetting resin paste.
Apply a conductive resin mixed and adjusted to about
After heating at 10 ° C. for 10 minutes, it was further heated and cured at 200 ° C. for 30 minutes to provide the side electrode layer 5.

【0025】次に、上記表面電極層4aの露出部、側面
電極層5及び裏面電極層4bの表面にニッケルメッキ層
6a及び半田メッキ層6bを順次形成してメッキ層6を
設けた。メッキ層6の下地となる側面電極層5表面には
金属粒子が高密度で配されているので、金属層上に行う
通常のメッキと変わらず均一で良好なメッキ層を容易に
形成することができる。
Next, a nickel plating layer 6a and a solder plating layer 6b were sequentially formed on the exposed portion of the surface electrode layer 4a, the surface of the side electrode layer 5, and the surface of the back electrode layer 4b, and a plating layer 6 was provided. Since the metal particles are arranged at a high density on the surface of the side electrode layer 5 serving as the base of the plating layer 6, it is possible to easily form a uniform and good plating layer as in the normal plating performed on the metal layer. it can.

【0026】このようにして得られたチップ抵抗器は、
側面電極層の剥離の生じないしかもメッキ層の剥離のな
い品質の高いものであった。
The chip resistor thus obtained is:
It was of high quality without peeling of the side electrode layer and without peeling of the plating layer.

【0027】また、上記実施例のようなチップ抵抗器の
場合は、上記下層5aの更に下層に樹脂のみの層を設け
たときは更にチップ本体との密着力を高めることができ
側面電極層の剥離の心配は皆無となる。
In the case of the chip resistor as in the above-described embodiment, when a resin-only layer is provided further below the lower layer 5a, the adhesion to the chip body can be further increased, and the side electrode layer can be formed. There is no worry about peeling.

【0028】上記実施例では、側面電極層5の下層5a
と上層5bとで同種の樹脂及び金属粒子を用いたが、下
層5aと上層5bとで別種の樹脂及び/又は金属粒子を
用いてもかまわない。
In the above embodiment, the lower layer 5a of the side electrode layer 5
Although the same type of resin and metal particles are used for the lower layer 5b and the upper layer 5b, different types of resin and / or metal particles may be used for the lower layer 5a and the upper layer 5b.

【0029】上記実施例においてはチップ抵抗器につい
て説明したが、上記実施例と同様にして側面電極層をチ
ップ積層セラミックコンデンサに適用した場合において
も同様の結果が得られた。
In the above embodiment, the chip resistor was described. However, similar results were obtained when the side electrode layer was applied to a chip multilayer ceramic capacitor in the same manner as in the above embodiment.

【0030】[0030]

【発明の効果】本発明のチップ状電子部品は、側面電極
層の剥離及び脱落の生じない、しかも側面電極層上に設
けられたメッキ層の剥離の生じない極めて高精度且つ高
信頼性のものであり、実用性の高いものである。
The chip-like electronic component of the present invention has extremely high precision and high reliability without peeling and falling off of the side electrode layer and without peeling of the plating layer provided on the side electrode layer. And is highly practical.

【図面の簡単な説明】[Brief description of the drawings]

【図1】本発明の一実施例を示すチップ抵抗器の断面図
である。
FIG. 1 is a sectional view of a chip resistor showing one embodiment of the present invention.

【図2】従来のチップ抵抗器を示す断面図である。FIG. 2 is a sectional view showing a conventional chip resistor.

【図3】従来の樹脂系側面電極層を有するチップ抵抗器
を示す部分断面図である。
FIG. 3 is a partial cross-sectional view showing a conventional chip resistor having a resin-based side electrode layer.

【符号の説明】[Explanation of symbols]

1 絶縁性基板 2 抵抗体層 3 保護層 5、15 樹脂系側面電極層 6 メッキ層 DESCRIPTION OF SYMBOLS 1 Insulating substrate 2 Resistor layer 3 Protective layer 5, 15 Resin side electrode layer 6 Plating layer

Claims (2)

(57)【特許請求の範囲】(57) [Claims] 【請求項1】 チップ本体側面に側面電極層を有するチ
ップ状電子部品において、上記側面電極層が合成樹脂及
び金属粒子を含有し、該金属粒子が上記側面電極層の表
層に高密度、下層に低密度となるように分布しているこ
とを特徴とするチップ状電子部品。
1. A chip-shaped electronic component having a side electrode layer on a side surface of a chip main body, wherein the side electrode layer contains a synthetic resin and metal particles, and the metal particles have a high density on a surface layer of the side electrode layer and a metal layer on a lower layer. A chip-shaped electronic component, which is distributed so as to have a low density.
【請求項2】 側面電極層が少なくとも2層以上からな
る多層構造で、該多層構造の最下層が金属粒子を60重
量%未満を含有し、表層が金属粒子を60〜80重量%
含有していることを特徴とする請求項1に記載のチップ
状電子部品。
2. A multilayer structure having at least two side electrode layers, wherein the lowermost layer of the multilayer structure contains less than 60% by weight of metal particles, and the surface layer contains 60 to 80% by weight of metal particles.
The chip-shaped electronic component according to claim 1, wherein the electronic component is contained.
JP5136481A 1993-05-14 1993-05-14 Chip electronic components Expired - Fee Related JP2757949B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP5136481A JP2757949B2 (en) 1993-05-14 1993-05-14 Chip electronic components

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5136481A JP2757949B2 (en) 1993-05-14 1993-05-14 Chip electronic components

Publications (2)

Publication Number Publication Date
JPH06325904A JPH06325904A (en) 1994-11-25
JP2757949B2 true JP2757949B2 (en) 1998-05-25

Family

ID=15176154

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5136481A Expired - Fee Related JP2757949B2 (en) 1993-05-14 1993-05-14 Chip electronic components

Country Status (1)

Country Link
JP (1) JP2757949B2 (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4735318B2 (en) * 2006-02-16 2011-07-27 パナソニック株式会社 Resistor and manufacturing method thereof
JPWO2014162987A1 (en) * 2013-04-04 2017-02-16 ローム株式会社 Composite chip parts, circuit assemblies and electronics

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04105310A (en) * 1990-08-24 1992-04-07 Toshiba Corp Multilayered ceramic capacitor

Also Published As

Publication number Publication date
JPH06325904A (en) 1994-11-25

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