JP2681433B2 - エッチング剤およびこのエッチング剤を使用するシリコン半導体部材のエッチング方法、および洗浄剤およびこの洗浄剤を使用するシリコン半導体部材の洗浄方法 - Google Patents

エッチング剤およびこのエッチング剤を使用するシリコン半導体部材のエッチング方法、および洗浄剤およびこの洗浄剤を使用するシリコン半導体部材の洗浄方法

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Publication number
JP2681433B2
JP2681433B2 JP4285338A JP28533892A JP2681433B2 JP 2681433 B2 JP2681433 B2 JP 2681433B2 JP 4285338 A JP4285338 A JP 4285338A JP 28533892 A JP28533892 A JP 28533892A JP 2681433 B2 JP2681433 B2 JP 2681433B2
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JP
Japan
Prior art keywords
etching
cleaning
agent
acid
silicon semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP4285338A
Other languages
English (en)
Japanese (ja)
Other versions
JPH06200384A (ja
Inventor
斎 関
聡 宮澤
洋文 福井
泰彦 笠間
章 阿部
功 中村
忠弘 大見
和子 荻野
Original Assignee
株式会社フロンテック
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 株式会社フロンテック filed Critical 株式会社フロンテック
Priority to JP4285338A priority Critical patent/JP2681433B2/ja
Priority to US08/128,419 priority patent/US5409569A/en
Priority to KR1019930020137A priority patent/KR0140688B1/ko
Priority to TW082110968A priority patent/TW260810B/zh
Publication of JPH06200384A publication Critical patent/JPH06200384A/ja
Application granted granted Critical
Publication of JP2681433B2 publication Critical patent/JP2681433B2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/02—Inorganic compounds
    • C11D7/04—Water-soluble compounds
    • C11D7/08—Acids
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30604—Chemical etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
    • H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
    • H01L21/32134—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by liquid etching only
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D2111/00—Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
    • C11D2111/10—Objects to be cleaned
    • C11D2111/14—Hard surfaces
    • C11D2111/22—Electronic devices, e.g. PCBs or semiconductors

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • General Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Organic Chemistry (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Wood Science & Technology (AREA)
  • Oil, Petroleum & Natural Gas (AREA)
  • Inorganic Chemistry (AREA)
  • ing And Chemical Polishing (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Weting (AREA)
  • Cleaning And De-Greasing Of Metallic Materials By Chemical Methods (AREA)
  • Detergent Compositions (AREA)
JP4285338A 1992-09-30 1992-09-30 エッチング剤およびこのエッチング剤を使用するシリコン半導体部材のエッチング方法、および洗浄剤およびこの洗浄剤を使用するシリコン半導体部材の洗浄方法 Expired - Lifetime JP2681433B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP4285338A JP2681433B2 (ja) 1992-09-30 1992-09-30 エッチング剤およびこのエッチング剤を使用するシリコン半導体部材のエッチング方法、および洗浄剤およびこの洗浄剤を使用するシリコン半導体部材の洗浄方法
US08/128,419 US5409569A (en) 1992-09-30 1993-09-28 Etchant, detergent and device/apparatus manufacturing method
KR1019930020137A KR0140688B1 (ko) 1992-09-30 1993-09-28 에칭제, 세정제 및 기기의 제조방법
TW082110968A TW260810B (forum.php) 1992-09-30 1993-12-24

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4285338A JP2681433B2 (ja) 1992-09-30 1992-09-30 エッチング剤およびこのエッチング剤を使用するシリコン半導体部材のエッチング方法、および洗浄剤およびこの洗浄剤を使用するシリコン半導体部材の洗浄方法

Publications (2)

Publication Number Publication Date
JPH06200384A JPH06200384A (ja) 1994-07-19
JP2681433B2 true JP2681433B2 (ja) 1997-11-26

Family

ID=17690262

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4285338A Expired - Lifetime JP2681433B2 (ja) 1992-09-30 1992-09-30 エッチング剤およびこのエッチング剤を使用するシリコン半導体部材のエッチング方法、および洗浄剤およびこの洗浄剤を使用するシリコン半導体部材の洗浄方法

Country Status (4)

Country Link
US (1) US5409569A (forum.php)
JP (1) JP2681433B2 (forum.php)
KR (1) KR0140688B1 (forum.php)
TW (1) TW260810B (forum.php)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2743823B2 (ja) * 1994-03-25 1998-04-22 日本電気株式会社 半導体基板のウエット処理方法
KR0154252B1 (ko) * 1994-03-31 1998-12-01 아베 아끼라 에칭제 및 전자소자와 그의 제조방법
JP2792550B2 (ja) * 1994-03-31 1998-09-03 株式会社フロンテック エッチング剤
EP0771892A4 (en) * 1994-08-01 1997-11-19 Komatsu Denshi Kinzoku Kk METHOD FOR PRODUCING DECORATIVE SILICONS
US20040140288A1 (en) * 1996-07-25 2004-07-22 Bakul Patel Wet etch of titanium-tungsten film
JP4240424B2 (ja) * 1998-10-23 2009-03-18 エルジー ディスプレイ カンパニー リミテッド エッチング剤及びこれを用いた電子機器用基板の製造方法
TW490756B (en) 1999-08-31 2002-06-11 Hitachi Ltd Method for mass production of semiconductor integrated circuit device and manufacturing method of electronic components
US6915592B2 (en) * 2002-07-29 2005-07-12 Applied Materials, Inc. Method and apparatus for generating gas to a processing chamber
JP2007514457A (ja) * 2003-09-17 2007-06-07 ベクトン・ディキンソン・アンド・カンパニー シリコンおよびその他の結晶質材料にルータを用いて直線状および非直線状の溝を作成するシステムおよび方法
JP4355201B2 (ja) * 2003-12-02 2009-10-28 関東化学株式会社 タングステン金属除去液及びそれを用いたタングステン金属の除去方法
JP4400281B2 (ja) * 2004-03-29 2010-01-20 信越半導体株式会社 シリコンウエーハの結晶欠陥評価方法
ATE469199T1 (de) * 2006-10-31 2010-06-15 Soitec Silicon On Insulator Verfahren zur charakterisierung von defekten auf silizium-oberflächen, ätzlösung für silizium- oberflächen und verfahren zur behandlung von silizium-oberflächen mit der ätzlösung
KR20100007461A (ko) * 2008-07-14 2010-01-22 삼성전자주식회사 석영 부품용 세정액 및 이를 이용한 석영 부품 세정방법
CN102246278B (zh) * 2008-12-10 2014-01-01 朗姆研究公司 用于促进硅电极抛光的盘和适配器组件
EP2616401A4 (en) 2010-09-16 2017-06-28 Specmat Inc. Method, process and fabrication technology for high-efficency low-cost crytalline silicon solar cells
CN106415783B (zh) * 2014-03-18 2020-03-20 斯派克迈特股份有限公司 氧化物层的工艺和制造技术
US10619097B2 (en) 2014-06-30 2020-04-14 Specmat, Inc. Low-[HF] room temperature wet chemical growth (RTWCG) chemical formulation
US20210288207A1 (en) * 2020-03-16 2021-09-16 1366 Technologies Inc. High temperature acid etch for silicon
CN113106465A (zh) * 2021-04-21 2021-07-13 西安瑞鑫科金属材料有限责任公司 一种高Cr耐蚀不锈钢表面氧化膜脱膜剂及脱膜方法

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5299101A (en) * 1976-02-16 1977-08-19 Fuji Photo Film Co Ltd Liquid of treating metalic image forming material
US4369099A (en) * 1981-01-08 1983-01-18 Bell Telephone Laboratories, Incorporated Photoelectrochemical etching of semiconductors
JPS57137472A (en) * 1981-02-17 1982-08-25 Nec Corp Etching method for polycrystalline silicon
EP0117051B2 (en) * 1983-01-19 1995-02-08 BRITISH TELECOMMUNICATIONS public limited company Growth of semiconductors
USH291H (en) * 1983-03-01 1987-06-02 The United States Of America As Represented By The Secretary Of The Navy Fully ion implanted junction field effect transistor
US4578419A (en) * 1985-03-28 1986-03-25 Amchem Products, Inc. Iodine compound activation of autodeposition baths
US5111259A (en) * 1989-07-25 1992-05-05 Texas Instruments Incorporated Trench capacitor memory cell with curved capacitors

Also Published As

Publication number Publication date
KR940007157A (ko) 1994-04-26
KR0140688B1 (ko) 1998-06-01
TW260810B (forum.php) 1995-10-21
JPH06200384A (ja) 1994-07-19
US5409569A (en) 1995-04-25

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