JP2668768B2 - Electrical characteristic measuring probe device - Google Patents

Electrical characteristic measuring probe device

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JP2668768B2
JP2668768B2 JP34276793A JP34276793A JP2668768B2 JP 2668768 B2 JP2668768 B2 JP 2668768B2 JP 34276793 A JP34276793 A JP 34276793A JP 34276793 A JP34276793 A JP 34276793A JP 2668768 B2 JP2668768 B2 JP 2668768B2
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sample
electrode
instrument
measuring
sample stage
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JPH075197A (en )
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茂 吉沢
秀継 工藤
和義 曽根
彰 森井
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ベクターセミコン株式会社
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【発明の詳細な説明】 DETAILED DESCRIPTION OF THE INVENTION

【0001】 [0001]

【産業上の利用分野】この発明は、半導体デバイス等の製造分野におけるプロセス開発工程でウエハ基板等の試料の微少な電流や電流容量等の電気的特性の測定を行うプローブ装置に関する。 BACKGROUND OF THE INVENTION This invention relates to a probe device for measuring the electrical characteristics of the minute current and a current capacity of a sample of a wafer substrate or the like in process development step in the manufacturing field of semiconductor devices.

【0002】 [0002]

【従来の技術】近年、半導体デバイス製造分野では益々高集積化及び超微細化が要求されており、特にメモリ事業では記憶容量の大容量化に伴い高集積化及び微細化が余儀なくされている。 In recent years, semiconductor devices in the manufacturing field has increasingly high integration and ultra miniaturization is required, particularly in the memory business forced high integration and miniaturization due to the memory capacity. ダイナミックランダムアクセスメモリ(DRAM)を例にあげると、これは各ビットセルを構成するキャパシタンス及びトランジスタ等のサイズを縮小化する等の手段により大容量化を図っている。 Taking a dynamic random access memory (DRAM) as an example, this is aimed at increasing the capacity by means such as reducing the size of such capacitance and transistor constituting each bit cell. 従って、そのキャパシタンスより僅かなリーク電流等が生じても、そのビット情報に大きな影響を与え真値を保持できなくなるため、リフレッシュサイクル時間の補償にも影響を与える。 Therefore, even a slight leakage current than its capacitance occurs, making it unable to hold a true value a significant impact on the bit information, also affects the compensation of the refresh cycle time. そのため半導体デバイス製造分野におけるプロセス開発解析工程では、ウエハ基板等の試料の微少な電流や電流容量等の電気的特性の評価は欠かせないものとなっている。 Therefore, in the process development analyzing step in the semiconductor device fabrication field, evaluation of electrical characteristics such as minute current and current capacity of a sample wafer substrate or the like has become indispensable.

【0003】図4は、そのような評価試験に使用されるマニュアルプローバを用いたシステムを例に採りその構成の概略を示している。 [0003] Figure 4 shows a schematic of taking the configuration of the system using a manual prober to be used for such evaluation test examples. 同図において、10は外界からの影響を少なくすためのシールドボックス、そのシールドボックス10内の11は測定対象となるウエハ等の試料Xを載置する試料台、13a及び13bはその試料台11上の試料Xに接触せしめられる測定針、14a及び14bは測定針13a及び13bを試料X上で移動させるマニュピレータで更に14a′及び14b′はマニュピレータベース、15は試料Xに接触せしめられた測定針13a及び13bから入力される電流等をシールドボックス外において測定する計測器、16は試料台11の上方の設けられた顕微鏡である。 In the figure, the sample stage 10 is shielded box for to reduce the influence from the outside world, 11 of the shield box 10 for placing the sample X such as a wafer to be measured, 13a and 13b the sample stage 11 measuring stylus that is brought into contact with a sample X of the upper, 14a and 14b measuring needles 13a and 13b a further manipulator moving on the sample X 14a 'and 14b' are manipulator base, 15 measuring needles which are brought into contact with the sample X instrument for measuring outside the shield box current or the like inputted from 13a and 13b, 16 is a microscope provided with the above the sample stage 11.

【0004】この装置では、まず試料台11上に試料X [0004] In this device, first sample X on the sample stage 11
を載せて顕微鏡16で観察しながらマニュピレータ14 Put the manipulator 14 while observing with a microscope 16
a及び14bを使って測定針13a及び13bを移動させ、試料Xの目的の場所に接触させる。 Using a and 14b to move the stylus 13a and 13b, it is brought into contact with the desired location of the sample X. このセット後、 After this set,
定電圧定電流計等の計測器15によってその試料Xにおける微少な電気的特性の測定を行う。 The instrument 15, such as a constant-voltage constant-current meter for measuring the minute electrical characteristics of the sample X.

【0005】 [0005]

【発明が解決しようとする課題】以上の構成では、試料Xや測定針13a及び13bが前記シールドボック10 In THE INVENTION It is an object of the above configuration, the sample X and stylus 13a and 13b are shielded box 10
によって外界と遮断されているため、本来外界の影響を受けないはずであるが、実際に得られるデータには、試料の加熱・冷却が可能なヒータ12等の加熱・冷却装置が試料台11自身に設けられている場合、特にそのヒータ12等よりノイズN が入り、又試料台11の試料接触面の導電部である計測用電極11aからプローブステーション11fへのリークI が生じるため、その測定用電極の電圧降下、及びある一定量のリーク電流I が存在する。 Because it is cut off from the outside world by, but should not be affected originally outside, the actually obtained data, the heating and cooling apparatus sample stage 11 itself heater 12 such that can be heated and cooled the sample If provided, especially for the noise N 1 enters from the heater 12 and the like, also leakage I 2 from measurement electrodes 11a is a conductive portion of the sample contact surface of the sample table 11 to the probe station 11f occurs, the the voltage drop of the measuring electrodes, and there is a leakage current I 2 of a certain amount. このため微少である電気的測定データを正確に測定することは困難であった。 Therefore to accurately measure the electrical measurement data is very small is difficult.

【0006】本発明は従来技術の以上な問題に鑑み創案されたもので、測定時に外界よりの電波等による影響を低減でき、又試料台11自身より発生するノイズN [0006] The present invention has been made in view of the above problems of the prior art, can reduce the influence of radio waves than outside at the time of measurement, and noise N 1 generated from the sample stage 11 itself,
及びリーク電流I 、I の影響を最小限に低減することができる微少な電気的特性の測定が可能なプローブ装置を提供せんとするものである。 There is provided cents probe device capable of measuring small electrical properties capable of reducing N 2 and the influence of the leak current I 1, I 2 to a minimum.

【0007】 [0007]

【課題を解決するための手段】本発明者等は、まず微少な電気的特性の測定に対し、測定針13a及び13bの計測線、試料台11の計測用電極11a等へ影響を与えるノイズN 、N 及びリークI 、I 等の原因を究明したところ、測定対象となる試料の周辺に電気的電位の浮遊している各導電性物質間での静電容量結合等による外界からの誘導によるノイズN の影響、試料台11 The present inventors have SUMMARY OF THE INVENTION, first to measure the minute electrical properties, measured needles 13a and 13b of the measurement line, the noise N that affects the measurement electrodes 11a and the like of the sample stage 11 1, N 2 and leakage I 1, was investigate the cause of such I 2, from the outside by capacitive coupling or the like between the conductive material is floating electrical potential to the periphery of the sample to be measured induction effect of noise N 2 by the sample base 11
に設置される試料加熱・冷却用のヒータ12等の加熱・ Heating of the heater 12 or the like for the sample heating and cooling installed in-
冷却装置から発生するノイズN による影響、測定針1 Influence of noise N 1 generated from the cooling device, the measurement needle 1
3a、13bの計測線1とシールド(接地)間のリークI 、及び試料台11の計測用電極11aとシールド間でのリークI 等が原因となることが判明した。 3a, the leakage I 1 between 13b of the measurement line 1 and the shield (ground), and the leak I 2 etc. between measurement electrodes 11a and the shield of the sample stage 11 that causes was found. そこでこの様な原因を最小限に低減できる手段につき鋭意検討したところ、以下に説明する本発明の構成を創案するに至った。 So was conducted extensive studies on means which can reduce such a cause to a minimum, it has led to the original idea of ​​the structure of the present invention which will be described below.

【0008】 即ち、本発明に係る微少な電気的特性測定 Namely, minute electrical characteristic measurement according to the present invention
用プローブ装置は、前記試料台の構成につき、試料接触面の計測用電極を含め絶縁体を介挿せしめた三重電極構造とし、且つ前記計測器から計測用電極までの間を連絡する計測線の構成についても、該計測線を中心軸電極として絶縁体を介挿せしめた同じく三重電極構造とし、試料台の中間電極を計測線の中間軸電極に繋いでガード用に前記計測器に連絡することにより、計測器側にて計測線に影響がでないようにガード・バッファを経由して前記中間電極が計測用電極と同電位になるように制御されることになり、そのためリークI そのものがなくなる。 Use the probe apparatus, the per sample stage configuration, and a triple electrode structure occupies allowed through the insulator including the electrode for measuring the sample contact surface, and the measurement lines to contact until measurement electrodes from the measuring instrument for the constitution, the same triple electrode structure accounted allowed through the insulator around axis electrode the regimen survey line, to contact the instrument for guard connects the intermediate electrode of the sample stage to the intermediate shaft electrode measurement line qualifies as the intermediate electrode via the guard buffer so as not to affect the measurement line at the instrument side is controlled such that the measurement electrodes at the same potential, itself is eliminated therefore leak I 2 . またシールド効果も大で計測線へのノイズN 、N The noise N 1, N of the shielding effect even in a large measurement line
の影響も最小限に低減されることになる。 2 of the impact also will be reduced to a minimum. 一方試料台の最下側電極を計測線の最外軸電極に繋いで計測器のシャーシに繋ぎ計測器のシャーシと同電位になるよう(通常は計測器側で接地)にする。 On the other hand so as to become the lowermost electrode of the sample stage to the chassis the same potential of the connecting instrument to chassis connected by the instrument to the outermost axis electrodes of the measuring line (usually grounded at the instrument side). このように前記試料台の構成を三重電極構造とすると共に、同じく計測器から試料台の計測用電極までの間を連絡する計測線についても三重電極構造としたことで、ノー・リーク(計測用電極と中間電極とが同電位になったことによる)及びロー・ Thus while the sample stage configuration with a triple electrode structure, also similarly measured line to contact between the measuring instrument to the measuring electrodes of the sample stage by the triple electrode structure, no leakage (for measurement due to the fact that the electrode and the intermediate electrode becomes the same potential) and low
ノイズ(中間電極と最下側電極の二重シールド効果による)とすることが可能になった。 It became possible to noise (due to the double shielding effect of the intermediate electrode and the lowermost electrode). 従来の試料台が試料接触面の計測用電極を含め絶縁体を介挿させた二重構造であり、その最下側電極を測定器のシャーシに繋ぐと、一重シールド効果しか得られず、ノイズの影響が大となり、更に計測用電極と最下側電極(通常測定器側で接地)との間に電位差が生じるため、絶縁体の固有抵抗値に依存したリークI が生じていた。 Conventional sample stage is a double structure with interposed insulators including the electrode for measuring the sample contact surface and connecting the lowermost electrode to the chassis of the instrument, obtained only single shielding effect, noise effect becomes large, and had further a potential difference between the measuring electrode and the lowermost electrode (the ground in the normal measuring instrument side) occurs, leakage I 2 occurs which depends on the specific resistance of the insulator. 又加熱・冷却用ヒータ等の加熱装置又は冷却装置が設けられた試料台では、温度上昇によりそのセラミックス系絶縁体材料の固有抵抗値が低下するため、更に計測用電極と最下側電極との間に発生するリークI が増大する。 Also in the heating device or sample stage cooling device is provided, such as heating and cooling the heater, since the specific resistance value of the ceramic-based insulating material with an increase in temperature decreases, the further measuring electrode and the lowermost electrode leak I 2 increases occurring between. これに対し本発明では、上述のようなガード用の中間電極を設けたことにより計測用電極との間が同電位になるため、絶縁体の固有抵抗値が低下してもノー・リークとなり、又二重シールド効果によってロー・ノイズとなっているため、 In contrast, in the present invention, since between the measuring electrode by providing an intermediate electrode for guard described above is the same potential, specific resistance of the insulator also becomes a no leak decreases, in addition, since that is the low noise by a double shield effect,
前記計測器の能力を十分発揮でき、微少な電気的特性の測定が可能になる。 The sufficiently exhibit the capability of the instrument, it becomes possible to measure the minute electrical characteristics.

【0009】 [0009]

【実施例】本発明の具体的実施例を以下説明する。 Specific examples of the embodiment of the present invention will be described below. 図1 Figure 1
乃至図3は半導体ウエハ基板を試料Xとしてその微少な電気的特性の測定を行う本発明の一実施例に係るマニュアル型のプローブ装置の構成を示している。 And FIG. 3 shows the structure of the manual type of probe apparatus according to an embodiment of the present invention to make measurements of the fine electrical characteristics of a semiconductor wafer substrate as the sample X. 図1において、10は外界からの影響を低減するシールドボックス、そのシールドボックス10内の11は測定対象となる半導体ウエハ基板Xを載置する試料台、12はその試料台11に内蔵された加熱用ヒータ、13a及び13b 1, 10 is a shield box for reducing the influence from the outside, the sample stage 11 of the shield box 10 for placing a semiconductor wafer substrate X to be measured, 12 heating built in the sample stage 11 use heater, 13a and 13b
はその試料台11上のウエハ基板Xに接触せしめられる測定針、14a及び14bは測定針13a及び13bをウエハ基板X上で移動させるマニピレータで更に14 In yet Manipireta the measuring stylus that is brought into contact with the wafer substrate X on the sample stage 11, 14a and 14b for moving the stylus 13a and 13b on the wafer substrate X 14
a′及び14b′はマニピレータベース、15はウエハ基板Xに接触せしめられた測定針13a及び13bに入力される電流等を計測する測定器(キースレイ社製システム251/SMU)、16は試料台11の上方に設けられた顕微鏡である。 a 'and 14b' are Manipi regulator base, 15 measuring device for measuring the current or the like to be input to the measuring needles 13a and 13b are brought into contact with the wafer substrate X (Kisurei Inc. System 251 / SMU), 16 is a sample stage 11 is a microscope disposed above the.

【0010】上記構成中、測定針13a及び13bから電流や電流容量等を計測する計測器15に繋げられた計測線1は、図2に示されるように該計測線1を中心軸電極として絶縁体を介挿せしめた三重電極構造で構成されており、そのうち中間軸電極は1aは計測器15のガード用に繋げられると共に、最外軸電極1bはシールドボックス10と計測器15のシャーシに接地せしめられている。 [0010] In the above configuration, the instrument 15 measurement lines 1 which is linked to the measuring current and the current capacity and the like from the measurement needles 13a and 13b, insulating the central axis electrode the regimen survey line 1 as shown in FIG. 2 body is composed of a triple electrode structure occupies allowed via, of which together with the intermediate shaft electrodes 1a are linked to the guard of the instrument 15, the outermost axis electrode 1b is grounded to the chassis of the shielding box 10 and the instrument 15 It is allowed.

【0011】また試料台11自身、及び該試料台11の後述する計測用電極11aと計測器15とを繋ぐ計測線2についても、同様に絶縁体を介挿せしめた三重電極構造で構成されている。 [0011] sample stage 11 itself, and for also measuring lines 2 connecting later measuring electrodes 11a of the sample platform 11 and the instrument 15, is composed of a triple electrode structure occupies allowed through the same insulating material there. 即ち図3に示されるように、試料接触面の導電部が、計測用電極11aとして、前記計測器15に連絡している中心軸電極である計測線2に繋げられると共に、その計測用電極11aとの間に絶縁体1 That is, as shown in FIG. 3, the conductive portion of the sample contacting surface, as measurement electrodes 11a, the measuring instrument 15 by contacting with are linked to the measurement line 2 is the central axis electrodes are in, the measurement electrodes 11a insulator 1 between the
1bを介挿せしめて設けられた中間電極11cが、計測線2の中間軸電極2aに繋げられて計測器15のガード用に繋げられ、またその下に絶縁体11dを介挿せしめて設けられた最下側電極11eが、計測線2の最外軸電極2bに繋げられて計測器15のシャーシに繋げられており、更にこの最外軸電極2bは前記シールドボックス10に繋げられ接地せしめられている。 Outermost intermediate electrode 11c which is provided tighten let through the 1b is provided connecting the guard of the instrument 15 is linked to the intermediate shaft electrode 2a of the measurement line 2, also provided tighten let through the insulator 11d thereunder lower electrode 11e is provided connecting the outermost axis electrode 2b of the measurement line 2 has been linked to the chassis of the instrument 15, and further the outermost axis electrode 2b is provided brought ground is tied to the shield box 10 .

【0012】以上の本実施例構成は、計測器の計測経路である測定針13a、13bからの計測線1の構成と、 [0012] The above configuration of this embodiment, the configuration of the measurement line 1 from the measuring needles 13a, 13b is the measurement path of the instrument,
試料台11そのものの構成及びその計測用電極11aと計測器の間を繋ぐ計測線2の構成につき、これらを絶縁体を介挿せしめた三重電極構造とした。 Configuration of the sample stage 11 itself and every configuration of a measurement line 2 connecting between the instrument and the measurement electrodes 11a, and these triple electrode structure occupies allowed through the insulator. このことで計測線1の中心軸電極と中間軸電極1a及び試料台11の計測用電極11aと中間電極11c間が同電位になってリークI 、I が発生しなくなり、又中間軸電極1aと最外軸電極1b、及び中間電極11cと最下側電極11 This leakage I 1, I 2 between the measuring electrode 11a and the intermediate electrode 11c becomes the same potential of the central axis electrode and the intermediate shaft electrode 1a and the sample stage 11 of the measurement line 1 is not generated in, and the intermediate shaft electrode 1a and the outermost axis electrodes 1b, and the intermediate electrode 11c and the lowermost electrode 11
eの二重シールド効果のためノイズN 、N の影響を最小限に低減できた。 It could be reduced to minimize the effect of noise N 1, N 2 for dual shielding effect of e. 従って計測される微少な電流の測定値(電流容量等も測定可能)はリークの影響がなく、 Thus measurement of very small currents to be measured (current capacity, etc. can also be measured) is no influence of the leakage,
ノイズの影響の少ない正確な計測データとなる。 A less accurate measurement data of the impact of noise. 下記表1は、各測定項目の中でリーク及びノイズの影響により測定が一番困難と思われる微少電流測定を例に採って、 Table 1 below, by way of example a small current measurement seems difficult most is determined by the influence of the leakage and noise in each measurement item,
従来構成と本実施例構成で測定されたウエハ基板Xの測定可能下限値を示している。 It shows a measurable lower limit of the measured wafer substrate X with the conventional configuration and the configuration of this embodiment.

【0013】 [0013]

【表1】 [Table 1]

【0014】この実験で使用した微少電流測定器15自身は、10フェムトA以下まで測定可能であるが、従来構成での測定針13a、13b及び試料台11は中間軸電極や中間電極を設けていない絶縁体を介挿せしめた二重電極構造であるためノー・リーク効果、二重シールド効果の何れか一方又は双方が不完全なものとなり、上記のような300フェムトAが測定可能下限値となった。 [0014] low current measuring device 15 itself used in this experiment is a measurable up to 10 femto A, stylus 13a in the conventional configuration, 13b and the sample stage 11 has an intermediate axis electrode and the intermediate electrode accounted allowed through without insulation is a dual-electrode structure for a no-leak effect, one or both of the double shielding effect becomes imperfect, and 300 femto a is measurable lower limit as described above became.
これに対し本実施例構成では、上記ノー・リーク効果、 In the present embodiment configured for this, the no-leak effect,
二重シールド効果の双方とも十分であり、その測定器分解能近くまで測定できることとなった。 Both double shielding effect is sufficient, it became to be able to measure up to the instrument resolution close.

【0015】 [0015]

【発明の効果】以上詳述した本発明の構成によれば、 According to the configuration of the present invention described above in detail, according to the present invention, trial
料台におけるリークI 、I の発生がなく、又二重シールド効果によりノイズN 、N の影響が最小限に低減されているため、正確で再現性がある微少電流や電流容量等の電気的特性が測定可能となる。 No occurrence of leakage I 1, I 2 in the postal board, also double since the shielding effect influences of noise N 1, N 2 is reduced to a minimum, minute current and current capacity such that accurate and reproducible electrical characteristics it is possible to measure the.

【図面の簡単な説明】 BRIEF DESCRIPTION OF THE DRAWINGS

【図1】本発明の一実施例に係るマニュアル型のプローブ装置の構成を示す概略図である。 1 is a schematic diagram showing the structure of a manual type of probe apparatus according to an embodiment of the present invention.

【図2】測定針から計測器に繋げられた計測線の三重電極構造の構成を示す説明図である。 FIG. 2 is an explanatory diagram showing the configuration of a triple electrode structure linked was measured line instrument from the measuring needle.

【図3】試料台及び該試料台の計測用電極と計測器とを繋ぐ計測線の三重電極構造の構成を示す説明図である。 3 is an explanatory diagram showing the configuration of a triple electrode structure of the sample table and the sample table of the measurement electrode and the instrument connecting the measurement lines.

【図4】従来のマニュアル型プローブ装置の一構成を示す説明図である。 4 is an explanatory diagram showing a configuration of a conventional manual probe device.

【符号の簡単な説明】 BRIEF DESCRIPTION OF THE SYMBOLS

1、2 計測線 1a、2a 中間軸電極 1b、2b 最外軸電極 10 シールドボックス 11 試料台 11a 計測用電極 11b 中間電極 11c 最下側電極 13a、13b 測定針 15 計測器 1,2 measurement lines 1a, 2a intermediate shaft electrode 1b, 2b outermost axis electrodes 10 shield box 11 sample stage 11a measuring electrode 11b intermediate electrode 11c lowermost electrodes 13a, 13b stylus 15 meter

フロントページの続き (72)発明者 森井 彰 神奈川県川崎市幸区北加瀬1−15−12 株式会社ベクトルセミコンダクタ内 (56)参考文献 実開 平3−95645(JP,U) Of the front page Continued (72) inventor Akira Morii Kawasaki-shi, Kanagawa-ku, Saiwai Kitakase 1-15-12 Corporation vector in the Semiconductor (56) references JitsuHiraku flat 3-95645 (JP, U)

Claims (2)

    (57)【特許請求の範囲】 (57) [the claims]
  1. 【請求項1】 測定対象となる試料を載せる試料台と、 [Claim 1] and the sample stage for placing a sample to be measured,
    その試料台上の試料に接触せしめられる測定針とを有し、外部で計測器と接続して前記試料の電気的特性の評価を行う電気的特性測定用プローブ装置において、前記試料台につき、その試料接触面の導電部を計測用電極として、その計測用電極を含めて絶縁体を介挿せしめた三重電極構造とし、且つ前記計測器から計測用電極までの間を連絡する計測線の構成につき、該計測線を中心軸電極として絶縁体を介挿せしめた同じく三重電極構造とし、試料台の中間電極を計測線の中間軸電極に繋いでガード用に前記計測器に連絡すると共に、試料台の最下側電極を計測線の最外軸電極に繋いで計測器のシャーシに繋ぎ計測器のシャーシと同電位になるようにしたことを特徴とする電気的特性測定用プローブ装置。 And a measuring stylus that is brought into contact with the sample on the sample stage, the electrical characteristic measuring probe device for evaluating the electrical characteristics of the sample by connecting the outside instrument, per the sample stage, the as measurement electrodes the conductivity of the sample contact surface, for its including measuring electrode and a triple electrode structure occupies allowed through the insulator, and the measurement lines to contact until measurement electrodes from the instrument configuration , the same triple electrode structure accounted allowed through the insulator around axis electrode the regimen survey line, as well as communication with said instrument for guard connects the intermediate electrode of the sample stage to the intermediate shaft electrode of the measuring line, the sample stage electrical characteristic measuring probe device, wherein a lowermost electrode was set to the chassis the same potential of the connecting instrument to chassis connected by the instrument to the outermost axis electrodes of the measuring line.
  2. 【請求項2】 請求項1に記載された電気的特性測定用プローブ装置の構成を備えると共に、その試料台の構成中に、試料の加熱又は冷却が可能な加熱装置又は冷却装置が設置されていることを特徴とする電気的特性測定用プローブ装置。 Together wherein with the arrangement of the electrical characteristic measuring probe apparatus according to claim 1, in its sample stage configuration, heating or cooling of the sample is possible heating device or cooling device is installed electrical characteristic measuring probe device characterized by there.
JP34276793A 1993-03-30 1993-12-16 Electrical characteristic measuring probe device Expired - Lifetime JP2668768B2 (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP5-93964 1993-03-30
JP9396493 1993-03-30
JP34276793A JP2668768B2 (en) 1993-03-30 1993-12-16 Electrical characteristic measuring probe device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP34276793A JP2668768B2 (en) 1993-03-30 1993-12-16 Electrical characteristic measuring probe device

Publications (2)

Publication Number Publication Date
JPH075197A true JPH075197A (en) 1995-01-10
JP2668768B2 true JP2668768B2 (en) 1997-10-27

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01310831A (en) * 1988-06-09 1989-12-14 Kanzaki Kokyukoki Mfg Co Ltd Table feed device for gear machining device
US5729150A (en) 1995-12-01 1998-03-17 Cascade Microtech, Inc. Low-current probe card with reduced triboelectric current generating cables
US6075376A (en) 1997-12-01 2000-06-13 Schwindt; Randy J. Low-current probe card
US6445202B1 (en) * 1999-06-30 2002-09-03 Cascade Microtech, Inc. Probe station thermal chuck with shielding for capacitive current
WO2002035603A1 (en) * 2000-10-18 2002-05-02 Ibiden Co., Ltd. Wafer prover device, and ceramic substrate used for wafer prover device

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3095645U (en) * 2003-01-31 2003-08-15 船井電機株式会社 Video cassette recorder

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