JP2598161B2 - Resin sealing method for hollow semiconductor device - Google Patents
Resin sealing method for hollow semiconductor deviceInfo
- Publication number
- JP2598161B2 JP2598161B2 JP26737190A JP26737190A JP2598161B2 JP 2598161 B2 JP2598161 B2 JP 2598161B2 JP 26737190 A JP26737190 A JP 26737190A JP 26737190 A JP26737190 A JP 26737190A JP 2598161 B2 JP2598161 B2 JP 2598161B2
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor element
- semiconductor device
- hollow
- resin
- sealing method
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Landscapes
- Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
Description
【発明の詳細な説明】 〔産業上の利用分野〕 この発明は、中空型半導体装置の樹脂封止方法に関す
るものである。Description: TECHNICAL FIELD The present invention relates to a resin sealing method for a hollow semiconductor device.
〔従来の技術〕 第２図は従来の中空型半導体装置の封止方法を示す断
面図であり、図において、11は半導体素子１をダイパッ
ド２上に固定してなる半導体素子部であり、３は外部装
置とコンタクトをとるインナーアウターリード、４は上
記半導体素子１上に中空部８を形成するために周りを取
り囲んで設置された樹脂流入防止用の筒状枠（スペー
サ）である。５は成形用上金型、６は成形用下金型、７
は注入中の封止樹脂である。また第３図は従来の方法に
よって成形された半導体装置であり、８は半導体素子上
に形成された中空部、９は封止樹脂である。[Prior Art] FIG. 2 is a cross-sectional view showing a conventional method of sealing a hollow semiconductor device. In the figure, reference numeral 11 denotes a semiconductor element portion in which a semiconductor element 1 is fixed on a die pad 2; Reference numeral 4 denotes an inner outer lead for making contact with an external device, and reference numeral 4 denotes a cylindrical frame (spacer) surrounding the periphery for forming a hollow portion 8 on the semiconductor element 1 for preventing resin inflow. 5 is an upper mold for molding, 6 is a lower mold for molding, 7
Is a sealing resin being injected. FIG. 3 shows a semiconductor device formed by a conventional method. Reference numeral 8 denotes a hollow portion formed on a semiconductor element, and reference numeral 9 denotes a sealing resin.
次に従来の封止方法について説明する。ダイパッド２
とインナーアウターリード３が一体となったリードフレ
ーム上にボンディングされた半導体素子１は、上金型５
と下金型６によって型締される。次いで封止樹脂７が注
入され、樹脂封止されるが、この際、半導体素子１上に
あらかじめ設置された筒状枠４と上金型５のキャビティ
面が接触することにより、樹脂の流入が妨げられ、第３
図に示すような中空部８を有する半導体装置が成形され
る。Next, a conventional sealing method will be described. Die pad 2
The semiconductor element 1 bonded to the lead frame in which the inner lead 3 is integrated with the
And the lower mold 6 clamps the mold. Next, the sealing resin 7 is injected and the resin is sealed. At this time, the cylindrical frame 4 previously set on the semiconductor element 1 and the cavity surface of the upper mold 5 come into contact with each other, so that the resin flows in. Disturbed, third
A semiconductor device having a hollow portion 8 as shown in the figure is formed.
従来の封止方法は以上のように行われていたが、半導
体素子部は高さ方向に拘束されていなかったため、半導
体素子部の傾きや注入樹脂による力等によって、第４図
に示すように、中空部の形成がうまく行われず、成形不
良を起こす問題があった。Although the conventional sealing method was performed as described above, since the semiconductor element portion was not restrained in the height direction, as shown in FIG. In addition, there was a problem that the formation of the hollow portion was not performed well, resulting in poor molding.
この発明は上記のような問題点を解決するためになさ
れたもので、中空部の形成が安定化された中空型半導体
装置の樹脂封止方法を得ることを目的とする。The present invention has been made to solve the above problems, and has as its object to provide a resin sealing method for a hollow semiconductor device in which formation of a hollow portion is stabilized.
この発明に係る中空型半導体装置の樹脂封止方法は、
半導体素子部の封止の際に、下金型のキャビティ面に設
けた凸部の台座と、上金型のキャビティ面とによって半
導体素子部の高さ方向の変動を拘束し、半導体素子部の
位置を固定させるようにしたものである。The resin sealing method for a hollow semiconductor device according to the present invention includes:
At the time of sealing the semiconductor element portion, fluctuations in the height direction of the semiconductor element portion are restrained by the pedestal of the convex portion provided on the cavity surface of the lower mold and the cavity surface of the upper mold, and The position is fixed.
この発明においては、下金型の凸部によって半導体素
子部の位置を固定することにより、樹脂注入過程におい
て中空部の形成は維持されており、中空部形成不良を防
止することができる。In the present invention, by fixing the position of the semiconductor element portion by the convex portion of the lower mold, the formation of the hollow portion is maintained in the resin injecting process, and the formation of the hollow portion can be prevented.
以下、この発明の一実施例を図について説明する。第
１図（ａ）において、１〜７は上記従来例のものと同一
部分を示しており、10は下金型６のキャビティ面に一体
に突設され上面に台座10aを有する柱状の凸部で、半導
体素子部11を支え、その下方向への変動を拘束する役目
をなす。An embodiment of the present invention will be described below with reference to the drawings. In FIG. 1 (a), reference numerals 1 to 7 denote the same parts as those of the above-mentioned conventional example, and reference numeral 10 denotes a columnar projection having a pedestal 10a protruding integrally with the cavity surface of the lower die 6. Thus, the semiconductor device 11 serves to support the semiconductor element section 11 and restrain downward movement thereof.
そしてこの凸部10の高さは、凸部10の上面（台座10
a）から上金型５のキャビティ面までの距離が、ダイパ
ッド２厚＋半導体素子１厚＋筒状枠４厚に設定されてお
り、半導体素子部11が金型内に型締めされる際に、傾い
た半導体素子部は矯正され、中空部が形成される。また
樹脂注入時には、半導体素子部は固定されているため、
樹脂の力によって変動することはなく、中空部は維持さ
れ、中空部の形成不良を防ぐことができる。The height of the projection 10 is the upper surface of the projection 10 (the base 10).
The distance from a) to the cavity surface of the upper mold 5 is set to the thickness of the die pad 2 + the thickness of the semiconductor element 1 + the thickness of the cylindrical frame 4, so that when the semiconductor element portion 11 is clamped in the mold, The inclined semiconductor element portion is corrected to form a hollow portion. Also, at the time of resin injection, the semiconductor element portion is fixed,
The hollow portion is not changed by the force of the resin, and the formation of the hollow portion can be prevented.
なお、本発明方法によれば、第１図（ｂ）に示される
ように、台座10の部分が空所になった中空型半導体装置
が得られることになる。According to the method of the present invention, as shown in FIG. 1B, a hollow semiconductor device in which the pedestal 10 is empty is obtained.
以上のようにこの発明によれば、中空型半導体装置の
封止方法を、半導体素子部の高さ方向の変動を拘束して
行うようにしたので、中空部の形成が安定化した封止プ
ロセスが得られる効果がある。As described above, according to the present invention, the sealing method of the hollow semiconductor device is performed while restraining the fluctuation in the height direction of the semiconductor element portion. The effect is obtained.
第１図（ａ）はこの発明の一実施例による中空型半導体
装置の樹脂封止方法を示す断面図、第１図（ｂ）は同図
（ａ）の方法によって成形された中空型半導体装置の断
面図、第２図は従来の中空型半導体装置の樹脂封止方法
を示す断面図、第３図は第２図の方法によって成形され
た中空型半導体装置の断面図、第４図は従来の中空型半
導体装置の樹脂封止方法における成形不良を示す断面図
である。 図中、１は半導体素子、２はダイパッド、３はインナー
アウターリード、４は筒状枠、５は上金型、６は下金
型、７は封止樹脂、８は中空部、10は凸部、10aは台
座、11は半導体素子部である。 なお、図中同一符号は同一又は相当部分を示す。FIG. 1A is a cross-sectional view showing a resin sealing method for a hollow semiconductor device according to an embodiment of the present invention, and FIG. 1B is a hollow semiconductor device formed by the method shown in FIG. 2, FIG. 2 is a sectional view showing a conventional method of sealing a hollow semiconductor device with a resin, FIG. 3 is a sectional view of a hollow semiconductor device formed by the method of FIG. 2, and FIG. FIG. 4 is a cross-sectional view showing a molding failure in the resin sealing method of the hollow semiconductor device of FIG. In the figure, 1 is a semiconductor element, 2 is a die pad, 3 is an inner outer lead, 4 is a cylindrical frame, 5 is an upper mold, 6 is a lower mold, 7 is a sealing resin, 8 is a hollow portion, and 10 is a protrusion. , 10a is a pedestal, and 11 is a semiconductor element part. In the drawings, the same reference numerals indicate the same or corresponding parts.
Claims (1)
素子をダイパット上に固定した半導体素子部を収容し、
この半導体素子部上に中空部を形成するための筒状枠を
設置した状態で樹脂封止するものにおいて、上記下金型
のキャビティ面に台座を有する柱状凸部を設け、この凸
部の台座と上記上金型のキャビティ面の間に上記半導体
素子部と上記筒状枠を挾持し、その高さ方向の変動を拘
束した状態で樹脂封止することを特徴とする中空型半導
体装置の樹脂封止方法。1. A semiconductor element portion in which a semiconductor element is fixed on a die pad is accommodated in cavities of a pair of upper and lower molds,
In a case where a resin is sealed in a state where a cylindrical frame for forming a hollow portion is provided on the semiconductor element portion, a columnar convex portion having a pedestal is provided on a cavity surface of the lower mold, and the pedestal of the convex portion is provided. Characterized in that the semiconductor element portion and the cylindrical frame are sandwiched between the cavity surface of the upper mold and the upper mold, and the resin sealing is performed in a state in which the fluctuation in the height direction is restrained. Sealing method.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP26737190A JP2598161B2 (en) | 1990-10-03 | 1990-10-03 | Resin sealing method for hollow semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP26737190A JP2598161B2 (en) | 1990-10-03 | 1990-10-03 | Resin sealing method for hollow semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH04142751A JPH04142751A (en) | 1992-05-15 |
| JP2598161B2 true JP2598161B2 (en) | 1997-04-09 |
Family
ID=17443909
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP26737190A Expired - Fee Related JP2598161B2 (en) | 1990-10-03 | 1990-10-03 | Resin sealing method for hollow semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2598161B2 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE102008039068A1 (en) | 2007-08-22 | 2009-02-26 | Denso Corp., Kariya-shi | Semiconductor device |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2586831B2 (en) * | 1994-09-22 | 1997-03-05 | 日本電気株式会社 | Resin sealing mold and method of manufacturing semiconductor device |
| JP2009099680A (en) | 2007-10-15 | 2009-05-07 | Panasonic Corp | Optical device and method of manufacturing the same |
-
1990
- 1990-10-03 JP JP26737190A patent/JP2598161B2/en not_active Expired - Fee Related
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE102008039068A1 (en) | 2007-08-22 | 2009-02-26 | Denso Corp., Kariya-shi | Semiconductor device |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH04142751A (en) | 1992-05-15 |
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