JP2560153B2 - The optical information recording medium - Google Patents

The optical information recording medium

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Publication number
JP2560153B2
JP2560153B2 JP3070293A JP7029391A JP2560153B2 JP 2560153 B2 JP2560153 B2 JP 2560153B2 JP 3070293 A JP3070293 A JP 3070293A JP 7029391 A JP7029391 A JP 7029391A JP 2560153 B2 JP2560153 B2 JP 2560153B2
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Japan
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recording medium
recording
optical information
information recording
ge
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JP3070293A
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JPH06171234A (en
Inventor
修治 吉田
隆司 山岸
準 渡辺
善親 田尻
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非酸化物ガラス研究開発株式会社
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Description

【発明の詳細な説明】 DETAILED DESCRIPTION OF THE INVENTION

【0001】 [0001]

【産業上の利用分野】本発明はレ―ザ―光をの光パルスを照射することにより情報信号を記録する光記録媒体に関するものである。 The present invention relates Les - The - to an optical recording medium for recording information signals by irradiating the optical pulses of light.

【0002】 [0002]

【従来の技術】非晶質と結晶質との相変化が可逆的に行われる記録材料は、その非晶質相と結晶相とのレ―ザ― Recording material phase change between the Related Art amorphous and crystalline is reversibly performed, Les with its amorphous phase and a crystalline phase - The -
光の反射率が異なることを利用して情報の記録を行う。 For recording information by utilizing the fact that the reflectance of light is different.
即ち、初期状態として結晶状態となっている記録層にレ―ザ―光を照射すると、該当する照射部は急熱急冷されることにより非晶質状態に変化し、非照射部とは反射率の異なるピットが形成される(記録)。 In other words, Le in the recording layer which is an initial state and the crystalline state - The - upon irradiation with light, irradiation unit applicable changes to an amorphous state by being rapidly heated rapidly cooled, the reflectivity and the non-irradiated portion different pits of is formed (recorded). さらに、記録層に形成されたピットに記録時よりも弱いレ―ザ―光を照射すると、該当する照射部は穏やかに加熱冷却され非晶質状態のピットは初期状態である結晶状態に戻る(消去)。 Furthermore, weaker les than during recording is formed on the recording layer pit - The - upon irradiation with light, irradiation unit applicable mildly heated cooling pit amorphous state back to the crystalline state is the initial state ( erased). これらの、非晶質相と結晶相との間の相転移が可逆的に行える、言い換えれば、記録と消去が可逆的に行える書換え可能な記録材料としては、例えば、Ge−S These, enabling the phase transition is reversible between the amorphous and crystalline phases, in other words, as the rewritable recording material erasing recorded can be performed reversibly, for example, Ge-S
b−Te(例えば、特開昭63−228433等)が報告されている。 b-Te (e.g., JP 63-228433, etc.) have been reported. これらの記録材料をプラスチック製の基板あるいはガラス製の基板上に、直接または下地層を介して所定の厚さの薄膜を成膜し、その上に保護層、さらに場合によっては反射層を積層して光記録媒体の基本構成としている。 These recording materials in a plastic substrate or a glass substrate, and a thin film of predetermined thickness through the direct or underlying layer, protective layer thereon, a reflective layer is laminated further optionally and the basic structure of an optical recording medium Te. ここで用いられる下地層および保護層にはSiO SiO the underlying layer and the protective layer used herein
2 ,ZnS,Si 34 ,AlN,Al 23等の誘電体膜やそれらの混合物、例えばZnSとSiO 2の組合せ等がある。 2, ZnS, Si 3 N 4 , AlN, dielectric films or mixtures thereof such as Al 2 O 3, for example, a combination of ZnS and SiO 2. また、反射層としてはAu,Al,Ni− As the reflective layer Au, Al, Ni-
Cr等の金属や合金が用いられている。 Metals and alloys of Cr or the like is used. これらの成膜方法としては、蒸着法、EB蒸着法、スパッタリング法等が用いられている。 These film formation methods, vapor deposition, EB deposition, sputtering or the like is used.

【0003】 [0003]

【発明が解決しようとする課題】情報社会の発達に伴い、これまで以上に情報伝達の高速化および記録情報保持の信頼性が要求されるようになってきている。 With the development of information society [0005], the reliability of the hitherto faster than the information transmission and recording information holding has come to be required. この記録媒体上の情報の保持耐久性は、記録層の非晶質相の結晶化温度が高いほど良い。 Retention durability of information on the recording medium, the better high crystallization temperature of the amorphous phase of the recording layer. ここで、上述のGe−Sb− Here, the above-mentioned Ge-Sb-
Te非晶質膜の結晶化温度はいずれも 180℃以下であり必ずしも十分であるとは言えない。 Crystallization temperature of Te amorphous film is less than both 180 ° C. not be said to be sufficient. そこで、Ge−Sb So, Ge-Sb
−Teの3元系の共晶組成Ge 15 Sb 61.5 Te 23.5が 2 Eutectic composition of ternary -Te Ge 15 Sb 61.5 Te 23.5 is 2
00℃以上の結晶化温度を有することを見い出した。 It was found to have a 00 ° C. or more crystallization temperature. さらに、該組成の記録消去の繰返し寿命も良く10 6回以上を達成した。 Furthermore, to achieve a more even better 10 6 iterations life of recording and erasing of said set formed. しかし、消去時間は400 ns程度で必ずしも高速消去に十分であるとは言えない。 However, it can not be said erase time is sufficient to necessarily fast erasing about 400 ns. 本発明は高速消去可能な光情報記録媒体を提供することを目的とする。 The present invention aims to provide a high speed erasable optical information recording medium.

【0004】 [0004]

【課題を解決するための手段】上記目的を達成するため、本発明の書換え可能な光情報記録媒体は、Ge−S To achieve the above object, according to an aspect of a rewritable optical information recording medium of the present invention, Ge-S
b−Teの3元系の共晶組成Ge 15 Sb 61.5 Te 23.5に窒素を含有させたことを特徴とする。 characterized in that the eutectic composition Ge 15 Sb 61.5 Te 23.5 the ternary b-Te obtained by incorporating nitrogen. 記録膜のベ―ス組成は成膜条件などの実験誤差により±2at%程度ずれることがあるが、その場合にも上記目的を達成できる。 Base of the recording film - scan composition may deviate about ± 2at% by experimental error, such as film formation conditions, the above object can be attained even if the.

【0005】 [0005]

【作用】Ge−Sb−Teの3元系の共晶組成Ge 15 [Action] Ge-Sb-Te ternary eutectic composition Ge 15 S
61.5 Te 23.5に窒素がド―プされると窒素と結合した部分が結晶核となり結晶化速度を速めたものと考えられる。 nitrogen b 61.5 Te 23.5 is de - moiety linked Once flop and nitrogen is considered that accelerate the crystallization rate becomes crystal nuclei. スパッタ時に導入する混合ガスの分圧比がN2 /A Partial pressure ratio of the mixed gas to be introduced during sputtering N2 / A
r> 0.12 の場合には記録膜の結晶化温度が高くなり過ぎて、初期結晶化及び記録消去が困難となる。 In the case of r> 0.12 is too high crystallization temperature of the recording film, the initial crystallization and recording and erasing becomes difficult. 2 /A N 2 / A
r< 0.060の場合にはガス流量の制御が困難になり成膜しにくいため、分圧比の下限を設けたが、ガス流量の制御ができ、記録膜に窒素を導入することができれば同様の作用が期待できる。 Since r <in the case of 0.060 hardly deposited becomes difficult to control the gas flow, is provided with the lower limit of the partial pressure ratio, it can be controlled gas flow rate, a similar effect if it is possible to introduce nitrogen into the recording film There can be expected.

【0006】 [0006]

【実施例1】以下に本発明の実施例を示す。 Examples of the present invention to Example 1 below. 記録膜、保護膜等の成膜はRFマグネトロンスパッタリングによって行った。 Recording film, the deposition of such protective film was carried out by the RF magnetron sputtering. 洗浄されたガラス片にGe 15 Sb 61.5 Te The cleaned glass pieces Ge 15 Sb 61.5 Te
23.5の組成のスパッタリングタ―ゲットを用いて、混合ガスN 2 /Ar= 0.060〜 0.12 (全ガス圧=3mTor Composition of 23.5 sputtering data - using a target mixed gas N 2 / Ar = 0.060~ 0.12 (total gas pressure = 3MTor
r)を導入してRFパワ―50Wで膜厚約80nmの記録膜を成膜した。 And forming the recording film with a thickness of about 80nm in RF power -50W by introducing r). 次いで、膜厚約150 nmのZnS−SiO 2混合物による保護膜を積層成膜した。 It was then laminated a protective film by ZnS-SiO 2 mixture film thickness of about 0.99 nm. この試料を窒素雰囲気中、温度 240℃で約30分間加熱し初期結晶化した。 The sample in a nitrogen atmosphere, the initially crystallized by heating to about 30 minutes at a temperature 240 ° C.. あるいは、連続光または1KHz のパルス光で記録消去特性評価領域をレ―ザ―アニ―ルして初期結晶化した。 Alternatively, Les the recording and erasing characteristics evaluation region with a pulse light of continuous light or 1 KHz - The - annealing - the initial crystallization to Le. 各試料について、パルス幅30ns、波長830 nmのレ―ザ―光により直径約 0.6μmの記録ピットを形成し、その記録ピットを消去することができる消去パルス幅(消去時間) For each sample, the pulse width 30 ns, wavelength 830 nm Les - The - light by forming a recording pit having a diameter of about 0.6 .mu.m, erase pulse width (erasing time) which can be erased its recording pit
および記録消去の繰り返し寿命を調べた。 And it examined the repetition life of the recording and erasing. その結果を第1表に示した。 The results are shown in Table 1. この結果より明らかなように本発明のN N of the result As is clear from the present invention
2 /Ar= 0.060〜 0.12 (全ガス圧=3mTorr)の混合ガスでスパッタリング成膜した窒素を含有するGe 15 2 / Ar = 0.060~ 0.12 Ge 15 containing sputtering nitrogen in mixed gas (total gas pressure = 3 mTorr)
Sb 61.5 Te 23.5記録膜は80ns以下で消去可能で、記録消去の繰り返し寿命は10 6回以上可能であった。 Sb 61.5 Te 23.5 the recording film can be erased in the following 80 ns, repetition life of the recording and erasing was possible over 10 6 times.

【0007】次に、結晶化開始温度を熱分析(DSC) [0007] Next, thermal analysis and crystallization initiation temperature (DSC)
によって調べた。 It was examined by. 熱分析の際の昇温速度は毎分10℃である。 Heating rate during thermal analysis per minute 10 ° C.. その結果を第1表に示した。 The results are shown in Table 1. この結果より明らかなように本発明のN 2 /Ar= 0.060〜 0.12 (全ガス圧=3mTorr)の混合ガスでスパッタリング成膜した窒素を含有するGe 15 Sb 61.5 Te 23.5薄膜の結晶化開始温度は 200℃を越えていた。 N 2 / Ar = 0.060~ 0.12 of the present invention as a result apparent from the crystallization starting temperature of the Ge 15 Sb 61.5 Te 23.5 thin film containing sputtering nitrogen in mixed gas (total gas pressure = 3 mTorr) is the 200 ℃ was over. ところで、記録膜のベ―ス組成は、成膜条件などの実験誤差により±2at%程度ずれる場合があり、その場合(Ge15±2SB61.5±2Te Meanwhile, base of the recording film - scan composition, it may be off by approximately ± 2at% by experimental error, such as a film-forming conditions, in which case (Ge15 ± 2SB61.5 ± 2Te
23.5±2)も同様の結果が得られた。 23.5 ± 2) a similar result was obtained. 第1表 ガス分圧比 消去時間 繰返し寿命 結晶化開始温度 N 2 /Ar ns 回 ℃ 0 400 10 6 225 0.060 <80 10 6 247 0.071 <80 10 6 249 0.091 <80 10 6 252 0.12 <80 10 6 263 0.15 記録消去困難 290 Table 1 gas partial pressure ratio erase time repetition life crystallization starting temperature N 2 / Ar ns times ℃ 0 400 10 6 225 0.060 < 80 10 6 247 0.071 <80 10 6 249 0.091 <80 10 6 252 0.12 <80 10 6 263 0.15 record erasing difficult 290

【0008】 [0008]

【比較例】消去時間および結晶化開始温度の比較例として、Ar=3mTorr、RFパワ―50Wでスパッタリング成膜したGe 15 Sb 61.5 Te 23.5記録膜のデ―タを第1 As COMPARATIVE EXAMPLE erase time and the crystallization starting TEMPERATURE COMPARISON example, Ar = 3 mTorr, data of Ge 15 Sb 61.5 Te 23.5 the recording film formation by sputtering RF power -50 W - the data first
表に示した。 It is shown in the table. 評価条件は実施例と同様である。 The evaluation conditions are the same as Example. 2 /A N 2 / A
r= 0.15 のように窒素ガスを多くすると結晶化開始温度が 290℃と高くなり初期結晶化及び記録消去が困難であった。 Increasing the nitrogen gas and high becomes initial crystallization and recording and erasing crystallization starting temperature is 290 ° C. as r = 0.15 was difficult.

【0009】 [0009]

【発明の効果】以上のように、本発明によるGe−Sb As in the above, according to the present invention, Ge-Sb according to the present invention
−Te3元系の共晶組成Ge 15 Sb 61 .5 Te 23.5に窒素をド―プした記録層を有する光情報記録媒体は、消去時間が十分に速いものである。 The -Te3 ternary nitrogen eutectic composition Ge 15 Sb 61 .5 Te 23.5 of de - optical information recording medium having a recording layer which is up the erase time is sufficiently fast.

───────────────────────────────────────────────────── フロントページの続き (56)参考文献 特開 昭63−244422(JP,A) 特開 昭63−225934(JP,A) 特開 平1−118229(JP,A) 特開 平2−258290(JP,A) 特開 平4−119884(JP,A) ────────────────────────────────────────────────── ─── of the front page continued (56) reference Patent Sho 63-244422 (JP, a) JP Akira 63-225934 (JP, a) JP flat 1-118229 (JP, a) JP flat 2- 258290 (JP, A) JP flat 4-119884 (JP, A)

Claims (3)

    (57)【特許請求の範囲】 (57) [the claims]
  1. 【請求項1】 Ge,Sb,Teの3元系の共晶組成G 1. A Ge, Sb, eutectic composition G of ternary Te
    e15(±2)Sb61.5(±2)Te23.5(±2)に窒素を含有した記録薄膜を有することを特徴とする光情報記録媒体。 e15 (± 2) Sb61.5 (± 2) Te23.5 optical information recording medium characterized by having a recording thin film containing nitrogen (± 2).
  2. 【請求項2】 記録薄膜をN 2ガスとArガスの混合ガスを用いたスパッタリングによって窒素を含有させることを特徴とする請求項1記載の光情報記録媒体。 2. An optical information recording medium according to claim 1, wherein the to contain nitrogen by sputtering using a mixed gas of a recording thin film N 2 gas and Ar gas.
  3. 【請求項3】 N 2ガスとArガスの分圧比が、N 2 Wherein the partial pressure ratio of N 2 gas and Ar gas, N 2 /
    Ar= 0.060〜 0.12 の範囲であることを特徴とする請求項2記載の光情報記録媒体。 The optical information recording medium according to claim 2, wherein the range of Ar = 0.060~ 0.12.
JP3070293A 1991-03-12 1991-03-12 The optical information recording medium Expired - Lifetime JP2560153B2 (en)

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JP3070293A JP2560153B2 (en) 1991-03-12 1991-03-12 The optical information recording medium

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JP3070293A JP2560153B2 (en) 1991-03-12 1991-03-12 The optical information recording medium

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JP2560153B2 true JP2560153B2 (en) 1996-12-04

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Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3570169B2 (en) 1997-08-22 2004-09-29 松下電器産業株式会社 The optical information recording medium
SG92631A1 (en) * 1998-03-20 2002-11-19 Sony Corp Optical recording medium, and method of manufacturing same
TW448443B (en) * 1998-08-05 2001-08-01 Matsushita Electric Ind Co Ltd Optical information storage media and production method as well as the storage reproducing method and device
DE60034974T2 (en) * 1999-03-15 2008-01-24 Matsushita Electric Industrial Co., Ltd., Kadoma Optical phase transition recording medium and manufacturing method
JP4227091B2 (en) 2004-10-01 2009-02-18 株式会社東芝 Phase-change optical recording medium

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2629696B2 (en) * 1987-03-17 1997-07-09 松下電器産業株式会社 The optical information recording and reproducing erasing member
JPH01100745A (en) * 1987-10-13 1989-04-19 Toshiba Corp Information recording medium
JPH01302549A (en) * 1988-05-31 1989-12-06 Toshiba Corp Information recording medium

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