JP2544588B2 - Length for calibration member and a manufacturing method thereof measured - Google Patents

Length for calibration member and a manufacturing method thereof measured

Info

Publication number
JP2544588B2
JP2544588B2 JP17797894A JP17797894A JP2544588B2 JP 2544588 B2 JP2544588 B2 JP 2544588B2 JP 17797894 A JP17797894 A JP 17797894A JP 17797894 A JP17797894 A JP 17797894A JP 2544588 B2 JP2544588 B2 JP 2544588B2
Authority
JP
Japan
Prior art keywords
length
plane
calibration member
measuring
characterized
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP17797894A
Other languages
Japanese (ja)
Other versions
JPH0771947A (en
Inventor
義則 中山
信次 岡崎
Original Assignee
株式会社日立製作所
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 株式会社日立製作所 filed Critical 株式会社日立製作所
Priority to JP17797894A priority Critical patent/JP2544588B2/en
Publication of JPH0771947A publication Critical patent/JPH0771947A/en
Application granted granted Critical
Publication of JP2544588B2 publication Critical patent/JP2544588B2/en
Anticipated expiration legal-status Critical
Application status is Expired - Lifetime legal-status Critical

Links

Description

【発明の詳細な説明】 DETAILED DESCRIPTION OF THE INVENTION

【0001】 [0001]

【産業上の利用分野】本発明は、寸法測長用の寸法校正を行う測長用校正部材及び校正部材の作製方法であって、特にサブミクロン以下の微小寸法に対応した電子ビーム測長に好適な測長用部材及びその作製方法に関する。 The present invention relates to a method for manufacturing a dimension length measuring length for calibration member and the calibration member measuring, the size and calibration of the electron beam measuring length particularly corresponding to the following critical dimensions submicron for suitable measurement member and a manufacturing method thereof.

【0002】 [0002]

【従来の技術】従来の装置は、特開昭59−12314 A conventional device, JP-A-59-12314
9号に記載のように、寸法校正機能は全くなく、単に試料観察点の移動の機能のみを有していた。 As described in JP 9, without any dimensions proofreading function was simply having only the function of the movement of the sample observation point. また測長用部材としては、特開昭61−292505号公報に異方性エッチングにより作製される鋸歯状の測定用基準体が開示されている。 As the long member measuring, serrated measurement reference element which is produced by anisotropic etching in JP-A-61-292505 is disclosed.

【0003】 [0003]

【発明が解決しようとする課題】上記従来技術は、鋸歯状の回折格子について開示していたが検出信号のS/N [0007] The prior art has disclosed the sawtooth diffraction grating but the detection signal S / N
について問題があった。 For there has been a problem.

【0004】本発明の目的は、移動ステージ上に絶対校正用部材を配置することにより、常に高い寸法精度と安定性を付加することにある。 An object of the present invention is that by placing the absolute calibration member on a moving stage, in adding a consistently high dimensional precision and stability.

【0005】 [0005]

【課題を解決するための手段】上記目的は、回折角測定(光学式測定)で保証された絶対校正用回折格子を、移動ステージに配置することにより達成される。 SUMMARY OF THE INVENTION The above object is, the absolute calibration diffraction grating that is guaranteed by the diffraction angle measurement (optical measurement) is accomplished by placing the movable stage.

【0006】すなわち、上記絶対校正用回折格子は、1 [0006] That is, the absolute calibration diffraction grating, 1
μm以下の微細な寸法で、電子ビーム走査時の2次電子信号のSN比が高く、その寸法値が他の測定手段で保証されることが必須条件である。 μm or less of minute dimensions, SN ratio of the secondary electron signal when the electron beam scanning is high, that the dimension value is guaranteed by the other measuring means is a prerequisite.

【0007】上記目的を達成するために、1μm以下の寸法を高い精度でパターニングできるレーザ干渉露光方式と、微細でかつアスペクト比の高い垂直断面構造が作製できるSiもしくは化合物半導体の(110)基板と湿式異方性エッチングを組合わせることにより、(11 [0007] In order to achieve the above object, a laser interference exposure method capable patterning the following dimensions 1μm with a high accuracy, Si or compound semiconductor (110) can be produced is high vertical sectional structure of fine and aspect ratio substrate and by combining the wet anisotropic etching, (11
1)面で形成される垂直断面構造を有し、かつ、2次電子信号の高いSN比が得られる寸法校正用回折格子を作製した。 Has a vertical cross-sectional structure formed by 1) surface, and a high SN ratio of the secondary electron signal was produced dimensional calibration grating obtained. 本回折格子は、一定のピッチを有することから、単一波長光源を入射、回折させることによりその回折角からピッチ寸法を保証することにより、上記目的を達成することができる。 This diffraction grating is, since it has a constant pitch, the incident single-wavelength light source, by ensuring pitch size from the diffraction angle by the diffraction, it is possible to achieve the above object. またピッチ寸法の保証は、ステージ組込後も、ステージ移動量とピッチ移動の対応からも達成できる。 The pitch dimensions guarantee, after stage sets write can also be achieved from the corresponding stage movement and the pitch movement.

【0008】 [0008]

【作用】(110)Siもしくは(110)化合物半導体基板上にレーザ干渉露光方式と湿式異方性エッチングによりパターニングされた回折格子は、0.1μmピッチ程度まで加工することが可能で、その精度は回折角測定により0.001μmまで保証できる特徴がある。 [Action] (110) Si or (110) diffraction grating patterned by laser interference exposure method and wet anisotropic etching on a compound semiconductor substrate, can be processed to about 0.1μm pitch, the precision It has the characteristic that can be guaranteed to 0.001μm by the diffraction angle measurement. この回折格子を移動ステージ上に配置し、試料を測長する前に回折格子を測長することで、いつの段階でも絶対校正が可能となる。 The diffraction grating is disposed on the moving stage, by the length measuring a diffraction grating prior to measuring a sample, and also an absolute calibration at any stage. また、回折格子を、ステージ移動方向に垂直な方向に設置することで、ステージ移動量と移動した回折格子のピッチ数との対応により、装置に組込後も、絶対寸法値を保証することが可能となる。 Further, a diffraction grating, by installing the stage moving direction perpendicular to the direction, the correspondence between the number of pitches of the diffraction grating moves the stage movement amount, that after integration the device also ensures absolute dimension It can become.

【0009】 [0009]

【実施例】以下、本発明の一実施例を図1,図2,図3 EXAMPLES Hereinafter, an embodiment of the present invention 1, 2, 3
により説明する。 It will be described with reference to.

【0010】図1に本発明の概略構成を示す。 [0010] shows a schematic configuration of the present invention in FIG. 移動ステージは、X方向に移動し、その移動量は、各々レーザ干渉計により測定される。 Moving stage moves in the X direction, the movement amount is respectively measured by a laser interferometer. 絶対校正用に用いた回折格子は、(110)Si基板に、He−Cdレーザによる干渉露光によるパターニングを用い、イソプロピルアルコール飽和KOH水溶液(30wt%,80℃)の異方性エッチにより得られ、ピッチ0.28μm,深さ1μm Diffraction grating used for absolute calibration, the (110) Si substrate, using a patterning by interference exposure with He-Cd laser, isopropyl alcohol saturated aqueous KOH (30wt%, 80 ℃) obtained by anisotropic etching of, pitch 0.28μm, depth 1μm
であり、回折角の測定からそのピッチ寸法精度は0.0 , And the its pitch dimensional accuracy by measuring the diffraction angle 0.0
1μm以下であった。 It was 1μm or less. (図2)この回折格子を電子ビームで走査した場合得られる2次電子波形は、図3に示す通りSN比の良い良好なものが得られた。 (2) secondary electrons waveform obtained when scanning the diffraction grating with an electron beam, favorable good as SN ratio shown in FIG. 3 were obtained.

【0011】次に電子ビームを固定しステージを移動させ移動したピッチ寸法と、レーザ干渉計によるステージ移動量の測定から、その精度は0.016μmで保証されていた。 [0011] and the pitch dimension moved to move the fixed stage electron beam then the measurement of stage movement amount by the laser interferometer, the accuracy was guaranteed in 0.016Myuemu. 以上の様に、2つの異なる測定方法により0.01μmの精度で絶対寸法が保証された。 As described above, the absolute dimension 0.01μm precision is guaranteed by two different measuring methods.

【0012】本実施例ではステージがX方向のみの移動の場合について説明したが、Y方向についても移動方向に垂直な方向に本実施例で用いた回折格子をステージ上に設置すれば全く同じ効果が得られることは言うまでもない。 [0012] Although stage in the present embodiment has been described for the case of movement in the X direction only, identical effects By installing a diffraction grating used in this embodiment in a direction perpendicular to the moving direction for the Y-direction on the stage it is needless to say that can be obtained.

【0013】 [0013]

【発明の効果】本発明によれば、測長寸法の絶対校正を、ステージ内の標準試料(回折格子)により行なえるので、これまで実現されなかった絶対寸法を高い精度で保証できる。 According to the present invention, the absolute calibration of the measurement dimensions, because performed by standard sample (diffraction grating) in the stage, the absolute dimensions have not been achieved heretofore can be guaranteed with high accuracy. また標準試料の絶対寸法についても、組込前の光学測定、組込後はステージ移動量測定方式により常に高精度に保証される。 As for the absolute size of the standard sample, the optical measurements before incorporation, after integration is guaranteed to always accurate by the stage movement amount measurement method.

【0014】さらに、本発明で用いる(110)Siまたは(110)化合物半導体基板で作製する回折格子は他の回折格子に比べ溝の深い回折格子が作製できるので、2次電子信号が良好でかつ、電子線照射による汚染の影響が少なく経時変化がないことから、半永久的に使用できる。 Furthermore, since used in the present invention (110) Si or (110) diffraction grating to produce a compound semiconductor substrate is deep diffraction grating having grooves than the other diffraction grating can be produced, the secondary electron signal and good , since there is no influence less change with time of contamination by electron beam irradiation, semi-permanently usable.

【図面の簡単な説明】 BRIEF DESCRIPTION OF THE DRAWINGS

【図1】本発明の一実施例の概略構成を示す図。 It shows a schematic configuration of an embodiment of the present invention; FIG.

【図2】本発明で用いた回折格子の断面図。 2 is a cross-sectional view of a diffraction grating used in the present invention.

【図3】その回折格子から得られた2次電子信号波形を示す図。 FIG. 3 shows a secondary electron signal waveform obtained from the diffraction grating.

【符号の説明】 DESCRIPTION OF SYMBOLS

1…試料、2…ステージ駆動モータ、3…試料移動ステージ、4…レーザ干渉測定器、5…回折格子、6…電子ビーム、7…(110)Si基板、8…(111)Si 1 ... Sample, 2 ... stage drive motor, 3 ... sample traveling stage, 4 ... laser interference measuring device, 5 ... diffraction grating, 6 ... electron beam, 7 ... (110) Si substrate, 8 ... (111) Si
結晶面。 The crystal surface.

Claims (7)

    (57)【特許請求の範囲】 (57) [the claims]
  1. 【請求項1】光学的回折角測定によりピッチ寸法の絶対値が特定された凹凸状パターンを有し、かつ、(11 1. A has an absolute value uneven pattern identified the pitch dimension by optical diffraction angle measurement, and (11
    0)面と(111)面を有する半導体部材からなることを特徴とする測長用校正部材。 0) plane and (111) length calibration member measuring characterized by comprising the semiconductor member having a surface.
  2. 【請求項2】上記凹凸状パターンは(110)面と(1 Wherein the uneven pattern (110) plane and the (1
    11)面で構成され、垂直断面構造の回折格子を形成することを特徴とする請求項1に記載の測長用校正部材。 Consists of 11) surfaces, the length calibration member measuring according to claim 1, characterized in that to form a diffraction grating of a vertical cross-sectional structure.
  3. 【請求項3】上記半導体部材はシリコン基板で構成され、かつその表面の面方位が(110)面であることを特徴とする請求項1又は2に記載の測長用校正部材。 Wherein said semiconductor member is formed of a silicon substrate, and a length for calibration member measuring according to claim 1 or 2 plane orientation of the surface, characterized in that a (110) plane.
  4. 【請求項4】上記半導体部材は化合物半導体基板で構成され、かつその表面の面方位が(110)面であることを特徴とする請求項1又は2に記載の測長用校正部材。 Wherein said semiconductor member is formed of a compound semiconductor substrate, and a length for calibration member measuring according to claim 1 or 2 plane orientation of the surface, characterized in that a (110) plane.
  5. 【請求項5】(110)面と(111)面を有する半導体基板の表面にレーザ干渉露光により回折格子パターンの凹凸を形成することを特徴とする測長用校正部材の作製方法。 Wherein (110) plane and (111) a method for manufacturing a length-measuring calibration member and forming a unevenness of diffraction grating pattern by laser interference exposure on a surface of a semiconductor substrate having a surface.
  6. 【請求項6】上記回折格子パターンを、湿式異方性エッチングにより(110)面と(111)面からなる垂直断面構造に形成することを特徴とする請求項5に記載の測長用校正部材の作製方法。 The method according to claim 6, wherein said diffraction grating pattern, the length calibration member measuring according to claim 5, characterized in that to form a vertical cross-sectional structure consisting of a wet anisotropic etching (110) plane and the (111) plane a method for manufacturing a.
  7. 【請求項7】上記湿式異方性エッチングに水酸化カリウム水溶液を用いることを特徴とする請求項6に記載の測長用校正部材の作製方法。 7. The method for manufacturing a length-measuring calibration member according to claim 6, characterized by using the wet anisotropic etching aqueous potassium hydroxide.
JP17797894A 1994-07-29 1994-07-29 Length for calibration member and a manufacturing method thereof measured Expired - Lifetime JP2544588B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP17797894A JP2544588B2 (en) 1994-07-29 1994-07-29 Length for calibration member and a manufacturing method thereof measured

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP17797894A JP2544588B2 (en) 1994-07-29 1994-07-29 Length for calibration member and a manufacturing method thereof measured

Publications (2)

Publication Number Publication Date
JPH0771947A JPH0771947A (en) 1995-03-17
JP2544588B2 true JP2544588B2 (en) 1996-10-16

Family

ID=16040405

Family Applications (1)

Application Number Title Priority Date Filing Date
JP17797894A Expired - Lifetime JP2544588B2 (en) 1994-07-29 1994-07-29 Length for calibration member and a manufacturing method thereof measured

Country Status (1)

Country Link
JP (1) JP2544588B2 (en)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6933507B2 (en) 2002-07-17 2005-08-23 Kenneth H. Purser Controlling the characteristics of implanter ion-beams
JP4287671B2 (en) 2003-02-19 2009-07-01 株式会社日立ハイテクノロジーズ Length Standard member and a manufacturing method thereof measured, and the electron beam measuring device using the same
US7157721B1 (en) 2003-12-22 2007-01-02 Transducer Technology, Inc. Coupled ionization apparatus and methods
JP4401814B2 (en) 2004-02-25 2010-01-20 株式会社日立ハイテクノロジーズ Length Standard measuring member and the electron beam measuring device
JP4276140B2 (en) 2004-06-25 2009-06-10 株式会社日立ハイテクノロジーズ Scanning electron microscope and the dimension calibration sample
JP2007248082A (en) 2006-03-14 2007-09-27 Hitachi High-Technologies Corp Standard sample to be used for charged particle beam device, charged particle beam device, and method for manufacturing standard sample to be used for charged particle beam device
US7772571B2 (en) 2007-10-08 2010-08-10 Advanced Ion Beam Technology, Inc. Implant beam utilization in an ion implanter
JP5400474B2 (en) * 2009-05-22 2014-01-29 株式会社日立ハイテクノロジーズ Dimensions calibration standard member of the electronic microscope, a method of manufacturing the same, and method of calibrating an electronic microscope apparatus using the same
CN103499323A (en) * 2013-10-11 2014-01-08 北京航天新风机械设备有限责任公司 Method and special device for measuring stretched length of rudder parts

Also Published As

Publication number Publication date
JPH0771947A (en) 1995-03-17

Similar Documents

Publication Publication Date Title
US6838688B2 (en) Light spot position sensor and displacement measuring device
JP3791620B2 (en) Scanning monochromator
US8525994B2 (en) Periodic patterns and technique to control misaligment between two layers
DE60118726T2 (en) In-situ mirror-characterization
CA1238987A (en) Interferometric methods for device fabrication
US5304795A (en) High resolution observation apparatus with photon scanning microscope
US20030128361A1 (en) Light modulation apparatus and optical switch, movement detecting device and distance measuring device, alignment device and semiconductor aligner, and processes thereof
US5021364A (en) Microcantilever with integral self-aligned sharp tetrahedral tip
EP0676614A1 (en) Calibration standards for profilometers and methods of producing them
EP0585094A1 (en) An optical integrated circuit having light detector
EP0027497B1 (en) Projection system for corpuscular beams
US5958633A (en) Exposure mask adapted for position detecting with oblique incident light
DE10059268C1 (en) Method and apparatus for manufacturing a coupling grating for a waveguide
EP0390092B1 (en) Encoder
KR0177148B1 (en) Fabrication process for wafer alignment marks by using peripheral etching to form grooves
JP3074579B2 (en) Positional deviation correction method
US5665905A (en) Calibration standard for 2-D and 3-D profilometry in the sub-nanometer range and method of producing it
DE4136510C2 (en)
DE102006052140B4 (en) The charged particle beam writing method and charged particle beam writing device
DE69529745T2 (en) Means for detecting a relative movement
JP3287794B2 (en) Photoelectric position measuring device
US5319961A (en) Cantilever chip for use in scanning probe microscope
EP1014034B1 (en) Integrated optoelectronic sensor and method for its production
EP1203257A2 (en) Scanning interferometric near-field confocal microscopy
JP2004519716A (en) Grating test pattern and overlay measurement method

Legal Events

Date Code Title Description
FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20070725

Year of fee payment: 11

EXPY Cancellation because of completion of term
FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20080725

Year of fee payment: 12

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20080725

Year of fee payment: 12