JP2527675Y2 - 半導体装置 - Google Patents
半導体装置Info
- Publication number
- JP2527675Y2 JP2527675Y2 JP1990405268U JP40526890U JP2527675Y2 JP 2527675 Y2 JP2527675 Y2 JP 2527675Y2 JP 1990405268 U JP1990405268 U JP 1990405268U JP 40526890 U JP40526890 U JP 40526890U JP 2527675 Y2 JP2527675 Y2 JP 2527675Y2
- Authority
- JP
- Japan
- Prior art keywords
- common electrode
- electrode
- light receiving
- semiconductor device
- receiving element
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000004065 semiconductor Substances 0.000 title claims description 37
- 239000010410 layer Substances 0.000 claims description 24
- 239000010409 thin film Substances 0.000 claims description 22
- 229910052751 metal Inorganic materials 0.000 claims description 12
- 239000002184 metal Substances 0.000 claims description 12
- 239000000758 substrate Substances 0.000 claims description 10
- 239000011241 protective layer Substances 0.000 claims description 6
- 238000002048 anodisation reaction Methods 0.000 claims description 2
- 238000010030 laminating Methods 0.000 claims 1
- 239000010408 film Substances 0.000 description 26
- 239000011159 matrix material Substances 0.000 description 21
- 229910021417 amorphous silicon Inorganic materials 0.000 description 11
- 230000003647 oxidation Effects 0.000 description 10
- 238000007254 oxidation reaction Methods 0.000 description 10
- 230000001681 protective effect Effects 0.000 description 9
- 238000000034 method Methods 0.000 description 7
- 238000000151 deposition Methods 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 6
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 5
- 230000008021 deposition Effects 0.000 description 5
- 239000001301 oxygen Substances 0.000 description 5
- 229910052760 oxygen Inorganic materials 0.000 description 5
- 238000001020 plasma etching Methods 0.000 description 4
- 238000000059 patterning Methods 0.000 description 3
- 238000009832 plasma treatment Methods 0.000 description 3
- 239000004642 Polyimide Substances 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000008151 electrolyte solution Substances 0.000 description 2
- 229920001721 polyimide Polymers 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- 229910018182 Al—Cu Inorganic materials 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 1
- 229910004205 SiNX Inorganic materials 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 238000007743 anodising Methods 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 239000012780 transparent material Substances 0.000 description 1
Landscapes
- Solid State Image Pick-Up Elements (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1990405268U JP2527675Y2 (ja) | 1990-12-28 | 1990-12-28 | 半導体装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1990405268U JP2527675Y2 (ja) | 1990-12-28 | 1990-12-28 | 半導体装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0492654U JPH0492654U (enrdf_load_stackoverflow) | 1992-08-12 |
| JP2527675Y2 true JP2527675Y2 (ja) | 1997-03-05 |
Family
ID=31882738
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1990405268U Expired - Lifetime JP2527675Y2 (ja) | 1990-12-28 | 1990-12-28 | 半導体装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2527675Y2 (enrdf_load_stackoverflow) |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0286170A (ja) * | 1988-09-22 | 1990-03-27 | Fuji Xerox Co Ltd | イメージセンサ |
| JPH02159762A (ja) * | 1988-12-14 | 1990-06-19 | Oki Electric Ind Co Ltd | 受光素子の製造方法 |
-
1990
- 1990-12-28 JP JP1990405268U patent/JP2527675Y2/ja not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0492654U (enrdf_load_stackoverflow) | 1992-08-12 |
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