JP2025050363A - 炭化珪素単結晶の製造方法および炭化珪素単結晶の製造装置 - Google Patents

炭化珪素単結晶の製造方法および炭化珪素単結晶の製造装置 Download PDF

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JP2025050363A
JP2025050363A JP2023159117A JP2023159117A JP2025050363A JP 2025050363 A JP2025050363 A JP 2025050363A JP 2023159117 A JP2023159117 A JP 2023159117A JP 2023159117 A JP2023159117 A JP 2023159117A JP 2025050363 A JP2025050363 A JP 2025050363A
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silicon carbide
crucible
raw material
covering member
single crystal
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JP2023159117A
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Japanese (ja)
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JP2025050363A5 (https=
Inventor
尚宏 杉山
Naohiro Sugiyama
秀隆 鷹羽
Hidetaka Takahane
宏行 近藤
Hiroyuki Kondo
正樹 松井
Masaki Matsui
博喜 湯川
Hiroki Yukawa
信之 大矢
Nobuyuki Oya
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Denso Corp
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Denso Corp
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Priority to JP2023159117A priority Critical patent/JP2025050363A/ja
Priority to PCT/JP2024/031477 priority patent/WO2025063035A1/ja
Priority to CN202480060071.2A priority patent/CN121889541A/zh
Publication of JP2025050363A publication Critical patent/JP2025050363A/ja
Publication of JP2025050363A5 publication Critical patent/JP2025050363A5/ja
Pending legal-status Critical Current

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    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/36—Carbides

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
JP2023159117A 2023-09-22 2023-09-22 炭化珪素単結晶の製造方法および炭化珪素単結晶の製造装置 Pending JP2025050363A (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2023159117A JP2025050363A (ja) 2023-09-22 2023-09-22 炭化珪素単結晶の製造方法および炭化珪素単結晶の製造装置
PCT/JP2024/031477 WO2025063035A1 (ja) 2023-09-22 2024-09-02 炭化珪素単結晶の製造方法および炭化珪素単結晶の製造装置
CN202480060071.2A CN121889541A (zh) 2023-09-22 2024-09-02 碳化硅单晶的制造方法及碳化硅单晶的制造装置

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JP2023159117A JP2025050363A (ja) 2023-09-22 2023-09-22 炭化珪素単結晶の製造方法および炭化珪素単結晶の製造装置

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JP2025050363A true JP2025050363A (ja) 2025-04-04
JP2025050363A5 JP2025050363A5 (https=) 2025-09-04

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CN (1) CN121889541A (https=)
WO (1) WO2025063035A1 (https=)

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4735622B2 (ja) * 2007-08-28 2011-07-27 株式会社デンソー 炭化珪素単結晶の製造装置
JP4957672B2 (ja) * 2008-07-11 2012-06-20 株式会社デンソー 炭化珪素単結晶の製造装置の製造方法および炭化珪素単結晶の製造方法
JP5240100B2 (ja) * 2009-06-30 2013-07-17 株式会社デンソー 炭化珪素単結晶の製造装置
JP5327126B2 (ja) * 2010-04-14 2013-10-30 株式会社デンソー 炭化珪素単結晶の製造方法および製造装置
JP5613604B2 (ja) * 2011-03-28 2014-10-29 昭和電工株式会社 炭化珪素単結晶製造装置、炭化珪素単結晶の製造方法及びその成長方法
JP2015020938A (ja) * 2013-07-22 2015-02-02 住友電気工業株式会社 炭化珪素結晶の製造装置、当該装置の製造方法、および当該装置を用いた炭化珪素結晶の製造方法

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CN121889541A (zh) 2026-04-17
WO2025063035A1 (ja) 2025-03-27

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